CN106409977B - A kind of cleaning method of silicon chip of solar cell, the preparation method of solar cell - Google Patents
A kind of cleaning method of silicon chip of solar cell, the preparation method of solar cell Download PDFInfo
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- CN106409977B CN106409977B CN201611025279.4A CN201611025279A CN106409977B CN 106409977 B CN106409977 B CN 106409977B CN 201611025279 A CN201611025279 A CN 201611025279A CN 106409977 B CN106409977 B CN 106409977B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 237
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 237
- 239000010703 silicon Substances 0.000 title claims abstract description 237
- 238000004140 cleaning Methods 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 210000004027 cell Anatomy 0.000 claims abstract description 235
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 150
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 144
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 116
- 239000011259 mixed solution Substances 0.000 claims abstract description 73
- 238000005530 etching Methods 0.000 claims abstract description 21
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 93
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 64
- 229910001868 water Inorganic materials 0.000 claims description 26
- 239000000243 solution Substances 0.000 claims description 22
- 238000007654 immersion Methods 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 14
- 229910021641 deionized water Inorganic materials 0.000 claims description 14
- 239000000654 additive Substances 0.000 claims description 13
- 230000000996 additive effect Effects 0.000 claims description 13
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 12
- 238000002791 soaking Methods 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000002242 deionisation method Methods 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims 1
- 229910021645 metal ion Inorganic materials 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 230000000536 complexating effect Effects 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 239000000356 contaminant Substances 0.000 abstract description 4
- 229960002050 hydrofluoric acid Drugs 0.000 description 44
- 238000005406 washing Methods 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 9
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000002000 scavenging effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 210000004209 hair Anatomy 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- UHLRPXXFPYMCAE-UHFFFAOYSA-N 4-isopropylcalix[4]arene Chemical group C1C(C=2O)=CC(C(C)C)=CC=2CC(C=2O)=CC(C(C)C)=CC=2CC(C=2O)=CC(C(C)C)=CC=2CC2=CC(C(C)C)=CC1=C2O UHLRPXXFPYMCAE-UHFFFAOYSA-N 0.000 description 1
- 241000370738 Chlorion Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses the preparation method of a kind of cleaning method of silicon chip of solar cell, solar cell, the cleaning method includes：Carrying out prerinse to silicon chip of solar cell causes silicon chip of solar cell surface to produce oxidation；Cleaning is performed etching to the silicon chip of solar cell after prerinse using the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid.In above-mentioned cleaning method provided in an embodiment of the present invention on the basis of using the micro etch effect of hydrofluoric acid and hydrogen peroxide to silicon chip of solar cell, complexing of the hydrochloric acid to metal ion is added again, the metal ion of residual can be dissolved, further strengthen the cleaning performance to silicon chip of solar cell surface metal contaminants, and then reduce few sub compound in the metal ion and silicon chip of solar cell on silicon chip of solar cell surface, the life-span of few son in silicon chip of solar cell is improved, so as to improve the efficiency of solar cell.
Description
Technical field
The present invention relates to technical field of solar, espespecially a kind of cleaning method of silicon chip of solar cell, solar cell
Preparation method.
Background technology
Solar cell is a kind of semiconductor devices that can convert solar energy into electric energy, the solar-electricity under illumination condition
Photogenerated current can be produced inside pond, is exported electric energy by electrode.In recent years, manufacture of solar cells technology is constantly progressive, raw
Production cost constantly reduces, and conversion efficiency improves constantly, and the application of solar cell power generation, i.e. photovoltaic generation is increasingly extensive and turns into
The important energy source of supply of electric power, silicon heterogenous solar battery technology are exactly a kind of new high-efficiency battery technology.
The Wafer Cleaning of existing high-efficiency battery is generally RCA cleaning techniques, and RCA is that one kind is typical, is still most general so far
All over the wet chemical cleans method used, i.e., first with ammoniacal liquor (NH3·H2) and hydrogen peroxide (H O2O2) mixed solution, to silicon chip
The cleaning of impurities on surface of silicon chip is removed, to remove the organic matter of silicon chip surface, particle and metallic element etc.；Then utilize
H2O2Silicon chip is aoxidized with hydrochloric acid (HCl) and complexing is handled, to remove the metallic atom of silicon chip surface；Finally utilize hydrogen fluorine
Sour (HF) solution, to remove the oxide layer of silicon chip surface；The final step of cleaning is also to be cleaned with HF solution.
Existing RCA cleaning techniques can meet to spread requirement of the crystalline silicon cell to silicon chip surface cleanliness factor, amorphous substantially
The built in field (electric field that PN junction is formed) of silicon/monocrystalline silicon heterojunction solar cell is in silicon chip surface, the interfacial state meeting on surface
There is very important influence to battery performance, therefore such battery has higher requirement to the surface cleanliness after cleaning.
But HF solution is internal in itself in current existing silicon wafer cleaning method may contain some metal impurities, for example, copper from
Son etc., new impurity is introduced while etching oxidation silicon, or above clean not thoroughly, it is residual to there are some metal ions
Stay, the surface recombination of minority carrier can be increased, minority carrier life time can be reduced, influence open-circuit voltage, and then influence cell photoelectric and turn
Change efficiency.
Therefore, the metallic pollution on silicon chip of solar cell surface after cleaning how is reduced, improve cleaning performance turns into this
The problem of art personnel's urgent need to resolve.
The content of the invention
In view of this, the embodiment of the present invention provides a kind of cleaning method of silicon chip of solar cell, the system of solar cell
It Preparation Method, can further strengthen the cleaning performance to silicon chip of solar cell surface metal contaminants, and then improve solar energy
The efficiency of battery.
Therefore, the embodiments of the invention provide a kind of cleaning method of silicon chip of solar cell, including：
Carrying out prerinse to silicon chip of solar cell causes the silicon chip of solar cell surface to produce oxidation；
The silicon chip of solar cell after the prerinse is entered using the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid
Row etch cleaner.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, the silicon chip of solar cell after the prerinse is carried out using the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid
Etch cleaner, specifically include：
Silicon chip of solar cell after the prerinse is put into the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid
Immersion preset time is taken out after performing etching cleaning, and the silicon chip of solar cell is rinsed with deionized water.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in the mixed solution of the hydrofluoric acid, hydrogen peroxide and hydrochloric acid, the mass percent of the hydrofluoric acid and the matter of hydrogen peroxide
It is identical to measure percentage.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in the mixed solution of the hydrofluoric acid, hydrogen peroxide and hydrochloric acid, the mass percent of the hydrofluoric acid for 0.1wt% extremely
2wt%, the mass percent of the hydrogen peroxide are 0.1wt% to 2wt%, the mass percent of the hydrochloric acid for 0.5wt% extremely
5wt%.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in the mixed solution of the hydrofluoric acid, hydrogen peroxide and hydrochloric acid, the mass percent of the hydrofluoric acid for 1wt% extremely
1.5wt%, the mass percent of the hydrogen peroxide is 1wt% to 1.5wt%, and the mass percent of the hydrochloric acid is 1.5wt%
To 3wt%.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in the mixed solution of the hydrofluoric acid, hydrogen peroxide and hydrochloric acid, the mass percent of the hydrofluoric acid is 0.1wt%, institute
The mass percent for stating hydrogen peroxide is 0.1wt%, and the mass percent of the hydrochloric acid is 0.5wt%；Or,
The mass percent of the hydrofluoric acid is 2wt%, and the mass percent of the hydrogen peroxide is 2wt%, the hydrochloric acid
Mass percent be 5wt%；Or,
The mass percent of the hydrofluoric acid is 1wt%, and the mass percent of the hydrogen peroxide is 1wt%, the hydrochloric acid
Mass percent be 3wt%.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, immersion preset time of the silicon chip of solar cell in the mixed solution of the hydrofluoric acid, hydrogen peroxide and hydrochloric acid is
0.5min to 10min.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, prerinse is carried out to silicon chip of solar cell and causes the silicon chip of solar cell surface to produce oxidation, is specifically included：
Silicon chip of solar cell is put into after soaking preset time in the mixed solution of ammoniacal liquor and hydrogen peroxide and taken out, and spent
Ionized water is rinsed to the silicon chip of solar cell；
The silicon chip of solar cell for completing above-mentioned steps is put into when soaking default in the mixed solution of hydrochloric acid and hydrogen peroxide
Between the silicon chip of solar cell surface is taken out after producing oxidation, and the silicon chip of solar cell is entered with deionized water
Row rinses；
Before prerinse is carried out to silicon chip of solar cell, in addition to：
Silicon chip of solar cell is put into after soaking preset time in sodium hydroxide solution and taken out, and with deionized water to institute
Silicon chip of solar cell is stated to be rinsed；
The silicon chip of solar cell for completing above-mentioned steps is put into sodium hydroxide and the mixed solution of flocking additive,
Take out after preset time, and the silicon chip of solar cell is rinsed with deionized water.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in the mixed solution of the ammoniacal liquor and hydrogen peroxide, the mass percent of the ammoniacal liquor is 29wt%, the hydrogen peroxide
Mass percent is 30wt%；
In the mixed solution of the hydrochloric acid and hydrogen peroxide, the mass percent of the hydrochloric acid is 37wt%, the dioxygen
The mass percent of water is 30wt%；
In the sodium hydroxide solution, the mass percent of the sodium hydroxide is 10wt% to 30wt%；
In the sodium hydroxide and the mixed solution of flocking additive, the mass percent of the sodium hydroxide is
5wt%, the percent by volume of the flocking additive is 0.3vol%.
The embodiment of the present invention additionally provides a kind of preparation method of solar cell, including it is provided in an embodiment of the present invention on
The cleaning method stated.
The beneficial effect of the embodiment of the present invention includes：
A kind of cleaning method of silicon chip of solar cell provided in an embodiment of the present invention, the preparation method of solar cell,
The cleaning method includes：Carrying out prerinse to silicon chip of solar cell causes silicon chip of solar cell surface to produce oxidation；Using
The mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid performs etching cleaning to the silicon chip of solar cell after prerinse.This hair
The micro etch effect of hydrofluoric acid and hydrogen peroxide to silicon chip of solar cell is being utilized in the above-mentioned cleaning method that bright embodiment provides
On the basis of, complexing of the hydrochloric acid to metal ion is added again, can dissolve the metal ion of residual, further reinforcement pair
The cleaning performance of silicon chip of solar cell surface metal contaminants, so reduce the metal ion on silicon chip of solar cell surface with
Few sub compound, life-span of few son in raising silicon chip of solar cell, so as to improve solar-electricity in silicon chip of solar cell
The efficiency in pond.
Brief description of the drawings
Fig. 1 is a kind of one of cleaning method flow chart of silicon chip of solar cell provided in an embodiment of the present invention；
Fig. 2 is the two of the cleaning method flow chart of a kind of silicon chip of solar cell provided in an embodiment of the present invention；
Fig. 3 is the three of the cleaning method flow chart of a kind of silicon chip of solar cell provided in an embodiment of the present invention；
Fig. 4 is the four of the cleaning method flow chart of a kind of silicon chip of solar cell provided in an embodiment of the present invention；
Fig. 5 is the five of the cleaning method flow chart of a kind of silicon chip of solar cell provided in an embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawings, to the specific embodiment party of the cleaning method of silicon chip of solar cell provided in an embodiment of the present invention
Formula is described in detail.
The embodiments of the invention provide a kind of cleaning method of silicon chip of solar cell, as shown in figure 1, specifically including following
Step：
S101, silicon chip of solar cell surface is caused to produce oxidation silicon chip of solar cell progress prerinse；
S102, using the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid to the silicon chip of solar cell after prerinse
Perform etching cleaning.
A kind of cleaning method of silicon chip of solar cell provided in an embodiment of the present invention includes：First to solar cell silicon
Piece carries out prerinse and causes silicon chip of solar cell surface to produce oxidation；Then the mixing of hydrofluoric acid, hydrogen peroxide and hydrochloric acid is used
Solution performs etching cleaning to the silicon chip of solar cell after prerinse.Above-mentioned cleaning method provided in an embodiment of the present invention
In using hydrofluoric acid and hydrogen peroxide to silicon chip of solar cell micro etch effect on the basis of, add hydrochloric acid again to metal
The complexing of ion, the metal ion of residual can be dissolved, further strengthened to silicon chip of solar cell surface metal contamination
The cleaning performance of thing, and then reduce in the metal ion and silicon chip of solar cell on silicon chip of solar cell surface few sub answers
Close, particularly the passivation effect at amorphous silicon/monocrystalline silicon heterojunction battery a-Si/c-Si interfaces is significantly improved, so as to improve
The open-circuit voltage of the life-span of few son and battery in silicon chip of solar cell, so as to improve the efficiency of solar cell.
It should be noted that it is the silicon for not depositing functional material that prewashed silicon chip of solar cell is carried out in step S101
Piece, the i.e. not yet silicon chip of working process；Hydrofluoric acid and hydrogen peroxide have micro etch effect to silicon chip of solar cell, are due to double
Oxygen water has oxidisability, silica can be melted into the oxide of silicon, and hydrofluoric acid can dissolve the oxide of silicon, so that producing to silicon
Micro etch effect.Hydrochloric acid has complexing to metal ion, is due to that metal ion can be complexed with chlorion, forms network
Compound and dissolve.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, such as Fig. 2
Shown, step S102 is using the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid to the silicon chip of solar cell after prerinse
Cleaning is performed etching, can specifically be realized in the following way：
S201, the mixed solution that the silicon chip of solar cell after prerinse is put into hydrofluoric acid, hydrogen peroxide and hydrochloric acid
Middle immersion preset time is taken out after performing etching cleaning, and silicon chip of solar cell is rinsed with deionized water.
It should be noted that above-mentioned steps S201 can carry out 1-3 wash cycles, i.e., in hydrofluoric acid, hydrogen peroxide and salt
Rinsed after being soaked in the mixed solution of acid with deionization, be repeated in circulation 1-3 times；It is preferred that 3 wash cycles are carried out, can
To reach more preferable cleaning performance.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, in hydrogen
In the mixed solution of fluoric acid, hydrogen peroxide and hydrochloric acid, the mass percent of hydrofluoric acid and the mass percent of hydrogen peroxide can be set
For identical, i.e. the mass percent of hydrofluoric acid and hydrogen peroxide is 1:When 1, cleaning performance is best.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, in hydrogen
In the mixed solution of fluoric acid, hydrogen peroxide and hydrochloric acid, the mass percent of hydrofluoric acid could be arranged to 0.1wt% to 2wt%, dioxygen
The mass percent of water could be arranged to 0.1wt% to 2wt%, and the mass percent of hydrochloric acid could be arranged to 0.5wt% extremely
5wt%.
Further, in the specific implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in order that cleaning performance is preferable, in the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid, the mass percent of hydrofluoric acid
1wt% to 1.5wt% is could be arranged to, the mass percent of hydrogen peroxide could be arranged to 1wt% to 1.5wt%, the matter of hydrochloric acid
Amount percentage could be arranged to 1.5wt% to 3wt%.
Further, in the specific implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in order that cleaning performance is more preferably, in the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid, the mass percent of hydrofluoric acid
1wt% is could be arranged to, now the mass percent of hydrogen peroxide could be arranged to 1wt%, and the mass percent of hydrochloric acid can be set
It is set to 3wt%；Or, in the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid, the mass percent of hydrofluoric acid it can also be provided that
0.1wt%, now the mass percent of hydrogen peroxide could be arranged to 0.1wt%, the mass percent of hydrochloric acid could be arranged to
0.5wt%；Or, the mass percent of hydrofluoric acid, it can also be provided that 2wt%, now the mass percent of hydrogen peroxide can be set
For 2wt%, the mass percent of hydrochloric acid could be arranged to 5wt%.
Shown through result of the test, the mass percent increase of hydrochloric acid is advantageous to the enhancing of complexing, but the quality of hydrochloric acid
Percentage, which crosses conference, makes the etching effect of hydrofluoric acid die down, so no more than 5wt%, the mass percent of hydrochloric acid is 2wt%
When, the matching of hydrofluoric acid, hydrogen peroxide and hydrochloric acid is optimal, can play more preferable cleaning performance.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, the sun
Immersion preset time of the energy cell silicon chip in the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid could be arranged to 0.5min extremely
10min, the reasons why so setting, which is the time, can cause that oxide layer etching is not thorough, and overlong time (is more than 10min) less than 30 seconds
The increase of silicon chip of solar cell surface roughness can be made, be unfavorable for the passivation on surface.Further, in order to obtain optimal cleaning
Effect, immersion preset time of the silicon chip of solar cell in the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid could be arranged to
2min to 5min.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, such as Fig. 3
Shown, step S101 carries out prerinse to silicon chip of solar cell and causes silicon chip of solar cell surface to produce oxidation, specifically may be used
With in the following way：
S301, silicon chip of solar cell is put into soak preset time in the mixed solution of ammoniacal liquor and hydrogen peroxide after take out,
And silicon chip of solar cell is rinsed with deionized water；In this step, in the mixed solution of ammoniacal liquor and hydrogen peroxide, ammonia
The mass percent of water could be arranged to 29wt%, and the mass percent of hydrogen peroxide could be arranged to 30wt%；
S302, the silicon chip of solar cell for completing above-mentioned steps is put into the mixed solution of hydrochloric acid and hydrogen peroxide and soaked in advance
If the time causes silicon chip of solar cell surface to be taken out after producing oxidation, and silicon chip of solar cell is rushed with deionized water
Wash；In this step, in the mixed solution of hydrochloric acid and hydrogen peroxide, the mass percent of hydrochloric acid could be arranged to 37wt%, double
The mass percent of oxygen water could be arranged to 30wt%.
It should be noted that silicon chip of solar cell, which is put into the mixed solution of ammoniacal liquor and hydrogen peroxide, can remove the sun
The cleaning of energy cell silicon chip surface impurity, can remove the organic matter, particle and metallic element on silicon chip of solar cell surface etc.；
Silicon chip of solar cell is put into the mixed solution of hydrochloric acid and hydrogen peroxide can be aoxidized and network to silicon chip of solar cell
Conjunction is handled, and then can remove the metallic atom on silicon chip of solar cell surface.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, such as Fig. 4
It is shown, in order that silicon chip of solar cell reduces light reflection to greatest extent, short circuit current (Isc) is improved, increases PN junction area,
It is final to improve photoelectric transformation efficiency, solar cell silicon is caused to silicon chip of solar cell progress prerinse performing step S101
Before piece surface produces oxidation, following steps can also be specifically included：
S401, damaging layer and making herbs into wool processing are carried out to silicon chip of solar cell.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, such as Fig. 5
Shown, step S401 carries out damaging layer and making herbs into wool processing to silicon chip of solar cell, specifically can be in the following way：
S501, silicon chip of solar cell is put into sodium hydroxide solution after immersion preset time and taken out, and use deionization
Water is rinsed to silicon chip of solar cell；In this step, in sodium hydroxide solution, the mass percent of sodium hydroxide can
To be arranged to 10wt% to 30wt%；
S502, by complete above-mentioned steps silicon chip of solar cell be put into sodium hydroxide and the mixed solution of flocking additive
In, taken out after preset time, and silicon chip of solar cell is rinsed with deionized water；In this step, in hydroxide
In sodium and the mixed solution of flocking additive, the mass percent of sodium hydroxide could be arranged to 5wt%, the body of flocking additive
Product percentage could be arranged to 0.3vol%.
Above-mentioned silicon chip of solar cell provided in an embodiment of the present invention is described in detail with two specific examples below
Cleaning method.
Example one：The cleaning method of silicon chip of solar cell comprises the following steps that：
Step 1, silicon chip of solar cell is put into sodium hydroxide (NaOH) solution and taken out after immersion preset time, be used in combination
Deionized water (DI water) is rinsed to silicon chip of solar cell, removes the damaging layer on silicon chip of solar cell surface；
In the specific implementation, first, by silicon chip of solar cell be put into mass percent for 10wt% to 30wt%'s
In NaOH solution, the temperature of the NaOH solution is preferably set to 75 DEG C to 85 DEG C, and silicon chip of solar cell is put into NaOH solution
Take out after middle 2min to 10min, silicon chip of solar cell is rinsed with DI water after taking-up, washing time is preferably
5min to 10min.The type of the silicon chip of solar cell of specific embodiment of the invention selection is N-type, silicon chip of solar cell
Thickness is 195 μm, and the resistivity of silicon chip of solar cell is 1 Ω cm to 5 Ω cm.
Step 2, by complete above-mentioned steps silicon chip of solar cell be put into NaOH and the mixed solution of flocking additive,
Take out after preset time, and silicon chip of solar cell is rinsed with DI water；
In the specific implementation, silicon chip of solar cell is put into the NaOH and percent by volume that mass percent is 5wt%
In mixed solution for 0.3vol% flocking additive, the temperature of the mixed solution is preferably set to 85 DEG C, by solar-electricity
Pond silicon chip is put into the mixed solution and taken out after 20min, and silicon chip of solar cell is rinsed with DI water after taking-up, punching
It is preferably 5min to 10min to wash the time.
Step 3, by complete above-mentioned steps silicon chip of solar cell be put into ammoniacal liquor (NH3·H2O), hydrogen peroxide (H2O2) and
Water (H2O take out after soaking preset time in mixed solution), and silicon chip of solar cell is rinsed with DI water；
In the specific implementation, it is 1 silicon chip of solar cell to be put into proportioning：1：5 NH3·H2O、H2O2And H2O mixing
In solution, wherein NH3·H2O mass percent is 29wt%, H2O2Mass percent be 30wt%, the mixed solution
Temperature is preferably set to 75 DEG C, silicon chip of solar cell is put into after soaking 15min in the mixed solution and taken out, spent after taking-up
DI water are rinsed to silicon chip of solar cell, and washing time is preferably 5min to 10min.
Step 4, by complete above-mentioned steps silicon chip of solar cell be put into hydrochloric acid (HCl), H2O2And H2O mixed solution
Middle immersion preset time causes silicon chip of solar cell surface to be taken out after producing oxidation, and with DI water to solar cell silicon
Piece is rinsed；
In the specific implementation, it is 1 silicon chip of solar cell to be put into proportioning：1：6 HCl, H2O2And H2O mixed solution
In, wherein HCl mass percent is 37wt%, H2O2Mass percent be 30wt%, the temperature of the mixed solution is preferably set
It is set to 75 DEG C, silicon chip of solar cell is put into after soaking 15min in the mixed solution and taken out, with DI water to too after taking-up
Positive energy cell silicon chip is rinsed, and washing time is preferably 5min to 10min.
Step 5, by complete above-mentioned steps silicon chip of solar cell be put into hydrofluoric acid (HF), H2O2With HCl mixed solution
Middle immersion preset time is taken out after performing etching cleaning, and silicon chip of solar cell is rinsed with DI water；
In the specific implementation, two kinds of conditions are selected as a comparison, condition one：Silicon chip of solar cell is put into quality percentage
The H for being 0.1wt% than the HF for 0.1wt%, mass percent2O2Mixed solution with mass percent for 0.5wt% HCl
In perform etching cleaning, scavenging period is preferably 2min to 5min, and the silicon chip of solar cell after cleaning is taken out, and uses DI
Water is rinsed to silicon chip of solar cell, and washing time is preferably 2min to 5min；Condition two：Above-mentioned steps will be completed
Silicon chip of solar cell be put into immersion preset time in the only solution with HF and taken out after performing etching cleaning, and use DI
Water is rinsed to silicon chip of solar cell, i.e., it is molten silicon chip of solar cell to be put into the HF that mass percent is 0.1wt%
Cleaning is performed etching in liquid, scavenging period is preferably 2min to 5min, the silicon chip of solar cell after cleaning is taken out, and use DI
Water is rinsed to silicon chip of solar cell, and washing time is preferably 2min to 5min.
So far, by example one provide above-mentioned steps 1 to step 5 washed out it is provided in an embodiment of the present invention it is above-mentioned too
Positive energy cell silicon chip.
Example two：The cleaning method of silicon chip of solar cell comprises the following steps that：
Step 6, silicon chip of solar cell is put into sodium hydroxide (NaOH) solution and taken out after immersion preset time, be used in combination
Deionized water (DI water) is rinsed to silicon chip of solar cell, removes the damaging layer on silicon chip of solar cell surface；
In the specific implementation, first, by silicon chip of solar cell be put into mass percent for 10wt% to 30wt%'s
In NaOH solution, the temperature of the NaOH solution is preferably set to 75 DEG C to 85 DEG C, and silicon chip of solar cell is put into NaOH solution
Take out after middle 2min to 10min, silicon chip of solar cell is rinsed with DI water after taking-up, washing time is preferably
5min to 10min.The type of the silicon chip of solar cell of specific embodiment of the invention selection is N-type, silicon chip of solar cell
Thickness is 195 μm, and the resistivity of silicon chip of solar cell is 1 Ω cm to 5 Ω cm.
Step 7, by complete above-mentioned steps silicon chip of solar cell be put into NaOH and the mixed solution of flocking additive,
Take out after preset time, and silicon chip of solar cell is rinsed with DI water；
In the specific implementation, silicon chip of solar cell is put into the NaOH and percent by volume that mass percent is 5wt%
In mixed solution for 0.3vol% flocking additive, the temperature of the mixed solution is preferably set to 85 DEG C, by solar-electricity
Pond silicon chip is put into the mixed solution and taken out after 20min, and silicon chip of solar cell is rinsed with DI water after taking-up, punching
It is preferably 5min to 10min to wash the time.
Step 8, by complete above-mentioned steps silicon chip of solar cell be put into ammoniacal liquor (NH3·H2O), hydrogen peroxide (H2O2) and
Water (H2O take out after soaking preset time in mixed solution), and silicon chip of solar cell is rinsed with DI water；
In the specific implementation, it is 1 silicon chip of solar cell to be put into proportioning：1：5 NH3·H2O、H2O2And H2O mixing
In solution, wherein NH3·H2O mass percent is 29wt%, H2O2Mass percent be 30wt%, the mixed solution
Temperature is preferably set to 75 DEG C, silicon chip of solar cell is put into after soaking 15min in the mixed solution and taken out, spent after taking-up
DI water are rinsed to silicon chip of solar cell, and washing time is preferably 5min to 10min.
Step 9, by complete above-mentioned steps silicon chip of solar cell be put into hydrochloric acid (HCl), H2O2And H2O mixed solution
Middle immersion preset time causes silicon chip of solar cell surface to be taken out after producing oxidation, and with DI water to solar cell silicon
Piece is rinsed；
In the specific implementation, it is 1 silicon chip of solar cell to be put into proportioning：1：6 HCl, H2O2And H2O mixed solution
In, wherein HCl mass percent is 37wt%, H2O2Mass percent be 30wt%, the temperature of the mixed solution is preferably set
It is set to 75 DEG C, silicon chip of solar cell is put into after soaking 15min in the mixed solution and taken out, with DI water to too after taking-up
Positive energy cell silicon chip is rinsed, and washing time is preferably 5min to 10min.
Step 10, by complete above-mentioned steps silicon chip of solar cell be put into hydrofluoric acid (HF), H2O2It is molten with HCl mixing
Soak after preset time performs etching cleaning and take out in liquid, and silicon chip of solar cell is rinsed with DI water；
In the specific implementation, two kinds of conditions are selected as a comparison, condition three：Silicon chip of solar cell is put into quality percentage
The H for being 1.5wt% than the HF for 1.5wt%, mass percent2O2In the mixed solution for the HCl that mass percent is 3wt%
Cleaning is performed etching, scavenging period is preferably 2min to 5min, the silicon chip of solar cell after cleaning is taken out, and use DI
Water is rinsed to silicon chip of solar cell, and washing time is preferably 2min to 5min；Condition four：Above-mentioned steps will be completed
Silicon chip of solar cell be put into immersion preset time in the only solution with HF and taken out after performing etching cleaning, and use DI
Water is rinsed to silicon chip of solar cell, i.e., it is molten silicon chip of solar cell to be put into the HF that mass percent is 0.5wt%
Cleaning is performed etching in liquid, scavenging period is preferably 2min to 5min, the silicon chip of solar cell after cleaning is taken out, and use DI
Water is rinsed to silicon chip of solar cell, and washing time is preferably 2min to 5min.
So far, above-mentioned steps 6 to the step 10 provided by example two has washed out provided in an embodiment of the present invention above-mentioned
Silicon chip of solar cell.
Further, in order to compare the cleaning performance of example one and example two, example one and example two are washed out
It is different that above-mentioned silicon chip of solar cell using plasma enhancing chemical vapour deposition technique provided in an embodiment of the present invention produces silicon
Matter joint solar cell, is comprised the following steps that：
Step 11, step 5 and step 10 are cleaned respectively after silicon chip of solar cell be put into drier and dry；
Step 12, the silicon chip of solar cell after drying is put into PECVD device, sunk on silicon chip of solar cell two sides
Product amorphous silicon intrinsic layer and doped layer, form ip/c-Si/in structures；Device temperature can be arranged on 150 DEG C；
Step 13, using PVD equipment, respectively deposit 100nm thickness on the ip/c-Si/in structures two sides that above-mentioned steps are formed
TCO film layers, formed battery；
Step 14, the battery two sides screen printing electrode formed with silver paste in above-mentioned steps；
Step 15, by above-mentioned steps make battery be put into annealing furnace, made annealing treatment under air atmosphere, anneal
Temperature could be arranged to 200 DEG C, and annealing time could be arranged to 30min；
Step 16, the test that minority carrier life time is carried out to the battery after annealing, and the test of battery efficiency.
After tested, the minority carrier life time for the battery that the condition one provided in embodiment one is produced is in 4000-5000 μ s, photoelectricity
Conversion efficiency is 21.5%；And the minority carrier life time for the battery that condition two is produced is in 2500-3500 μ s, photoelectric transformation efficiency
21.2%；It can be seen that the minority carrier life time for the battery that the embodiment of the present invention is produced using condition one is extended, opto-electronic conversion effect
Rate is improved.
The minority carrier life time for the battery that the condition three provided in embodiment two is produced is in 4000-5000 μ s, opto-electronic conversion effect
Rate is 21.6%；And the minority carrier life time for the battery that condition two is produced is in 2500-3500 μ s, photoelectric transformation efficiency 21.3%；
It can be seen that the minority carrier life time for the battery that the embodiment of the present invention is produced using condition three is extended, photoelectric transformation efficiency obtains
Improve.
Through comparing, the photoelectric transformation efficiency highest for the battery that the embodiment of the present invention is produced using condition three.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of preparation method of solar cell, including adopts
With above-mentioned cleaning method.The implementation of the preparation method of the solar cell may refer to the cleaning of above-mentioned silicon chip of solar cell
The embodiment of method, repeat part and repeat no more.
A kind of cleaning method of silicon chip of solar cell provided in an embodiment of the present invention, the preparation method of solar cell,
The cleaning method includes：Carrying out prerinse to silicon chip of solar cell causes silicon chip of solar cell surface to produce oxidation；Using
The mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid performs etching cleaning to the silicon chip of solar cell after prerinse.This hair
The micro etch effect of hydrofluoric acid and hydrogen peroxide to silicon chip of solar cell is being utilized in the above-mentioned cleaning method that bright embodiment provides
On the basis of, complexing of the hydrochloric acid to metal ion is added again, can dissolve the metal ion of residual, further reinforcement pair
The cleaning performance of silicon chip of solar cell surface metal contaminants, so reduce the metal ion on silicon chip of solar cell surface with
Few sub compound, life-span of few son in raising solar energy silicon chip of solar cell, so as to improve too in silicon chip of solar cell
The efficiency of positive energy battery.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (8)
- A kind of 1. cleaning method of silicon chip of solar cell, it is characterised in that including：Carrying out prerinse to silicon chip of solar cell causes the silicon chip of solar cell surface to produce oxidation；The silicon chip of solar cell after the prerinse is carved using the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid Erosion cleaning；Wherein, in the mixed solution of the hydrofluoric acid, hydrogen peroxide and hydrochloric acid, the mass percent of the hydrofluoric acid and double The mass percent of oxygen water is identical；The mass percent of the hydrofluoric acid is 0.1wt% to 2wt%, the quality of the hydrogen peroxide Percentage is 0.1wt% to 2wt%, and the mass percent of the hydrochloric acid is 0.5wt% to 5wt%.
- 2. cleaning method as claimed in claim 1, it is characterised in that using the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid Cleaning is performed etching to the silicon chip of solar cell after the prerinse, specifically included：Silicon chip of solar cell after the prerinse is put into the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid and soaked Preset time is taken out after performing etching cleaning, and the silicon chip of solar cell is rinsed with deionized water.
- 3. cleaning method as claimed in claim 2, it is characterised in that molten in the mixing of the hydrofluoric acid, hydrogen peroxide and hydrochloric acid In liquid, the mass percent of the hydrofluoric acid is 1wt% to 1.5wt%, the mass percent of the hydrogen peroxide for 1wt% extremely 1.5wt%, the mass percent of the hydrochloric acid is 1.5wt% to 3wt%.
- 4. cleaning method as claimed in claim 2, it is characterised in that molten in the mixing of the hydrofluoric acid, hydrogen peroxide and hydrochloric acid In liquid, the mass percent of the hydrofluoric acid is 0.1wt%, and the mass percent of the hydrogen peroxide is 0.1wt%, the hydrochloric acid Mass percent be 0.5wt%；Or,The mass percent of the hydrofluoric acid is 2wt%, and the mass percent of the hydrogen peroxide is 2wt%, the matter of the hydrochloric acid Amount percentage is 5wt%；Or,The mass percent of the hydrofluoric acid is 1wt%, and the mass percent of the hydrogen peroxide is 1wt%, the matter of the hydrochloric acid Amount percentage is 3wt%.
- 5. cleaning method as claimed in claim 2, it is characterised in that the silicon chip of solar cell is in the hydrofluoric acid, double Immersion preset time in the mixed solution of oxygen water and hydrochloric acid is 0.5min to 10min.
- 6. cleaning method as claimed in claim 1, it is characterised in that cause to silicon chip of solar cell progress prerinse described Silicon chip of solar cell surface produces oxidation, specifically includes：Silicon chip of solar cell is put into after soaking preset time in the mixed solution of ammoniacal liquor and hydrogen peroxide and taken out, and use deionization Water is rinsed to the silicon chip of solar cell；The silicon chip of solar cell for completing above-mentioned steps is put into immersion preset time in the mixed solution of hydrochloric acid and hydrogen peroxide makes Obtain after the silicon chip of solar cell surface produces oxidation and take out, and the silicon chip of solar cell is rushed with deionized water Wash；Before prerinse is carried out to silicon chip of solar cell, in addition to：By silicon chip of solar cell be put into sodium hydroxide solution soak preset time after take out, and with deionized water to it is described too Positive energy cell silicon chip is rinsed；The silicon chip of solar cell for completing above-mentioned steps is put into sodium hydroxide and the mixed solution of flocking additive, default Take out after time, and the silicon chip of solar cell is rinsed with deionized water.
- 7. cleaning method as claimed in claim 6, it is characterised in that in the mixed solution of the ammoniacal liquor and hydrogen peroxide, institute The mass percent for stating ammoniacal liquor is 29wt%, and the mass percent of the hydrogen peroxide is 30wt%；In the mixed solution of the hydrochloric acid and hydrogen peroxide, the mass percent of the hydrochloric acid is 37wt%, the hydrogen peroxide Mass percent is 30wt%；In the sodium hydroxide solution, the mass percent of the sodium hydroxide is 10wt% to 30wt%；In the sodium hydroxide and the mixed solution of flocking additive, the mass percent of the sodium hydroxide is 5wt%, institute The percent by volume for stating flocking additive is 0.3vol%.
- 8. a kind of preparation method of solar cell, it is characterised in that including the cleaning side as described in claim any one of 1-7 Method.
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| CN110137302A (en) * | 2018-02-08 | 2019-08-16 | 国家电投集团科学技术研究院有限公司 | The cleaning of silicon heterojunction solar battery crystalline silicon substrate and etching method and silicon heterojunction solar battery |
| CN108384667A (en) * | 2018-02-28 | 2018-08-10 | 浙江晶科能源有限公司 | A kind of silicon chip cleaning liquid and silicon wafer cleaning method |
| CN108766869A (en) * | 2018-05-30 | 2018-11-06 | 苏州日弈新电子科技有限公司 | A kind of silicon chip of solar cell slot type cleaning method |
| CN108831824A (en) * | 2018-06-26 | 2018-11-16 | 英利能源（中国）有限公司 | The cleaning method of solar battery substrate and the preparation method of solar battery |
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