CN115101632A - Preparation method of novel HBC solar cell - Google Patents
Preparation method of novel HBC solar cell Download PDFInfo
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- CN115101632A CN115101632A CN202210839368.1A CN202210839368A CN115101632A CN 115101632 A CN115101632 A CN 115101632A CN 202210839368 A CN202210839368 A CN 202210839368A CN 115101632 A CN115101632 A CN 115101632A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 51
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000000151 deposition Methods 0.000 claims abstract description 34
- 229910005855 NiOx Inorganic materials 0.000 claims abstract description 28
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000005498 polishing Methods 0.000 claims abstract description 8
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 26
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 claims description 8
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910000480 nickel oxide Inorganic materials 0.000 description 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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Abstract
The invention relates to the technical field of solar cells, in particular to a preparation method of a novel HBC solar cell, which comprises the steps of polishing a monocrystalline silicon substrate, texturing the front surface of the monocrystalline silicon substrate, evaporating and depositing a NiOx film on the back surface of the textured monocrystalline silicon substrate, depositing an intrinsic hydrogenated amorphous silicon layer on the back surface of the monocrystalline silicon substrate, slotting the intrinsic hydrogenated amorphous silicon layer and the NiOx film on the back surface by laser, forming an N-type material region to be deposited, performing surface hydrophobic treatment on the monocrystalline silicon substrate by adopting HF, sequentially depositing the hydrogenated amorphous silicon layer and an N-type hydrogenated amorphous silicon layer on the back surface of the monocrystalline silicon substrate, sequentially depositing the intrinsic hydrogenated amorphous silicon layer and the SiNx layer on the front surface, slotting the intrinsic hydrogenated amorphous silicon layer and the N-type hydrogenated amorphous silicon layer on the back surface by laser, exposing the NiOx layer, depositing an intrinsic TCO layer on the back surface and the like, so that the prepared HBC cell has lower cost, High productivity and easy stripping of the mask layer.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of a novel HBC solar cell.
Background
The interdigital Back Contact Heterojunction Silicon Solar Cell (HBC Solar Cell for short) has the advantages of the interdigital Back Contact Solar Cell (IBC Solar Cell for short) and the Heterojunction Solar Cell (HIT Solar Cell for short) with a Thin Intrinsic layer, removes a front surface metal electrode, reduces shading loss and obtains larger short-circuit current, and greatly reduces an interface state by inserting a layer of high-quality Intrinsic amorphous Silicon monocrystalline Silicon passivation layer between the heavily doped amorphous Silicon and the crystalline Silicon, reduces surface recombination and improves open-circuit voltage, thereby being the Solar Cell with highest photoelectric conversion efficiency in the world at present.
However, at present, silicon nitride or silicon oxide is often selected as a mask layer when a conventional HBC cell is patterned, and when the HBC cell is subjected to post-wet cleaning, the mask layer is very easy to peel off due to poor adhesion of amorphous silicon and silicon nitride, and finally the mask function of the HBC cell is disabled, so that a suitable masked material and a suitable mask material play a vital role in forming the HBC cell; meanwhile, the HBC battery is usually prepared by adopting PECVD equipment, as is well known, due to the physical characteristics of the amorphous silicon, the preparation temperature of the amorphous silicon must be lower than 200 ℃, so that the stability of the amorphous silicon is far lower than that of a material prepared by high-temperature equipment due to low deposition temperature, uniformity and performance need to be considered due to the common PECVD for depositing the amorphous silicon, the achievable productivity is extremely low each time, and the requirement of future mass production is greatly limited; moreover, the PECVD equipment is expensive in manufacturing cost and long in repayment period, so that the single cost of the HBC battery is high, and the mass production process of the HBC battery is indirectly influenced.
The information disclosed in this background section is only for enhancement of understanding of the general background of the disclosure and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art that is already known to a person skilled in the art.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the preparation method of the novel HBC solar cell is provided, a layer of NiOx film is deposited on the back surface of the HBC cell to serve as a buffer material, and the technical problems that the existing HBC solar cell is high in preparation cost and difficult to produce in mass production, and a mask layer is extremely easy to strip are solved.
In order to achieve the purpose, the invention adopts the technical scheme that: a preparation method of a novel HBC solar cell comprises the following steps:
s1: pre-cleaning, polishing and re-cleaning a monocrystalline silicon substrate;
s2: carrying out front-side texturing on the monocrystalline silicon substrate;
s3: evaporating and depositing a NiOx film on the back surface of the textured monocrystalline silicon substrate by adopting an ALD method or a PEALD method;
s4: depositing an intrinsic hydrogenated amorphous silicon layer on the back surface of the monocrystalline silicon substrate by adopting a PECVD method;
s5: notching the intrinsic hydrogenated amorphous silicon layer and the NiOx film on the back surface by laser, and opening an area to be deposited by the N-type material;
s6: carrying out surface hydrophobic treatment on the monocrystalline silicon substrate by adopting HF;
s7: sequentially depositing an intrinsic hydrogenated amorphous silicon layer and an n-type hydrogenated amorphous silicon layer on the back surface of the monocrystalline silicon substrate by adopting a PECVD method, and sequentially depositing an intrinsic hydrogenated amorphous silicon layer and a SiNx layer on the front surface of the monocrystalline silicon substrate;
s8: slotting the intrinsic hydrogenated amorphous silicon layer and the n-type hydrogenated amorphous silicon layer on the back surface by laser to expose the NiOx layer;
s9: a TCO layer is deposited on the back side.
Furthermore, when the front surface of the monocrystalline silicon is subjected to texturing, a layer of SiNx needs to be deposited on the back surface of the monocrystalline silicon to serve as a protective layer, and after texturing is finished, the SiNx is removed by adopting an HF solution and an HCl solution.
Further, in step S4, the deposition source of the NiOx film is nickel carbonate dissolved in dilute hydrochloric acid and oxygen.
Further, in the step S4, the thickness of the NiOx film ranges from 20nm to 50 nm.
Further, in step S6, the single-crystal silicon substrate is introduced into a dilute sulfuric acid bath, and the remaining NiOx is completely removed from the region of the bath, followed by treatment with HF.
Further, the patterning of the grooved area and the metallization pattern of the steps S5 and S8 are consistent.
Further, before step S9, a diluted KOH solution is used to remove the intrinsic hydrogenated amorphous silicon and the n-type hydrogenated amorphous silicon remaining in the bath.
Further, after step S9, a green nanosecond laser with a wavelength of 532nm is used for insulation, and the insulation resistance value of the PN region is tested.
Further, in the step S1, a KOH solution with a concentration of 5% to 9% is specifically used to pre-clean the monocrystalline silicon substrate, a polishing machine is used to polish the monocrystalline silicon substrate with the KOH solution with a concentration of 3% to 8%, and the KOH solution and a hydrogen peroxide solution are used to re-clean the monocrystalline silicon.
Further, in the step S7, the thickness of the intrinsic hydrogenated amorphous silicon layer is 15 to 30nm, the thickness of the n-type hydrogenated amorphous silicon layer is 20 to 40nm, the thickness of the intrinsic hydrogenated amorphous silicon layer is 15 to 30nm, and the thickness of the SiNx layer is 80 ± 20 nm.
The beneficial effects of the invention are as follows: according to the preparation method, amorphous silicon of a P area material is replaced by a NiOx layer which is easier to deposit and is lower in cost, and with the introduction of nickel oxide, firstly, the adhesion effect of nickel oxide and amorphous silicon is improved, and the problem of wet cleaning and stripping of a conventional HBC battery caused by using masks such as amorphous silicon, silicon nitride and the like is solved; secondly, the method of depositing nickel oxide by using the ALD method or the PEALD method is adopted in the deposition of the nickel oxide, so that the problem of high equipment price caused by using the traditional low-temperature PECVD method is reduced in terms of equipment, and meanwhile, due to the advantages of the ALD method, the quantity of mass production is larger, and the investment cost of the equipment is directly reduced; thirdly, due to the introduction of nickel oxide, the mask link of the HBC battery is optimized, the deposition step of masks such as silicon nitride and the like is not carried out in one step in the patent, but the intrinsic amorphous silicon layer of the original functional layer is used as the mask, and the process flow is simplified.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a flow chart showing a novel HBC solar cell according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Example one
Types of single crystal silicon substrates employed in this example: n-type 3 Ω cm 166X 166mm silicon wafer with a thickness of 150 μm.
Fig. 1 shows a cross-sectional view of a solar cell structure in different steps, which is specifically prepared by the following steps,
s1: putting a monocrystalline silicon substrate into a groove type alkali polishing machine, wherein the working volume of the groove body is 360L, firstly, pre-cleaning the monocrystalline silicon substrate by using KOH solution with the concentration of 5% -9%, removing organic and other contaminants generated in the cutting and transportation processes of the surface of the monocrystalline silicon substrate, then, polishing the monocrystalline silicon substrate by using the KOH solution with the concentration of 3% -8%, wherein the time is 800s, the temperature is 70-80 ℃, and finally, re-cleaning the monocrystalline silicon substrate by using the KOH solution and hydrogen peroxide solution;
s1.1: depositing a SiNx layer on the back surface of the monocrystalline silicon substrate by using PECVD equipment, wherein the thickness of the SiNx layer is 100 nm;
s2: using KOH with the concentration of 3-5% to carry out texturing treatment on the front surface of the single crystal silicon substrate, wherein the time is 500-800s, and the temperature is 75-80 ℃;
s2.1: then putting the monocrystalline silicon substrate into a groove type alkali polishing machine, cleaning the monocrystalline silicon substrate by using 5% -9% KOH solution to remove the contamination on the surface of the monocrystalline silicon substrate, and then using 1% -1.5% KOH solution and 1.5% -2% H solution 2 O 2 Post-cleaning the silicon wafer for 200-300s at 65-70 ℃, and finally washing off residual SiNx by using a 1-1.5% HF solution and a 1.5-2% HCl solution;
s3: and (3) evaporating and depositing a NiOx film on the back surface of the textured monocrystalline silicon substrate by using ALD equipment, wherein the deposition sources are nickel carbonate and oxygen dissolved in dilute hydrochloric acid, the deposition source flow rate of the nickel carbonate is 120-150sccm, purging is carried out for a short time after the source opening is finished, the source flow rate of the oxygen is 50-80sccm, purging is carried out for nitrogen for a short time after the oxygen source opening is finished, the four steps are a cycle, the cycle is carried out for 20 times continuously, and the deposition temperature is 280 ℃. The thickness of the NiOx deposit is 30 nm;
s4: depositing an intrinsic hydrogenated amorphous silicon layer with the thickness of 25nm on the back surface of the monocrystalline silicon substrate by adopting a PECVD method;
s5: notching the intrinsic hydrogenated amorphous silicon layer and the NiOx film on the back surface by laser, and opening an area to be deposited by the N-type material;
s6: the monocrystalline silicon substrate enters a sulfuric acid groove with the concentration of 1-3% for 100-150s, NiOx in the region of the groove i is thoroughly removed, and then the monocrystalline silicon substrate is placed into the next groove for HF treatment, wherein the concentration of HF solution is 1-3% for 20-30s, so that the surface of the monocrystalline silicon substrate is hydrophobic;
s7: sequentially depositing an intrinsic hydrogenated amorphous silicon layer with the thickness of 20nm and an n-type hydrogenated amorphous silicon layer with the thickness of 30nm on the back surface of the monocrystalline silicon substrate by adopting a PECVD method, and sequentially depositing an intrinsic hydrogenated amorphous silicon layer with the thickness of 20nm and a SiNx layer with the thickness of 80nm on the front surface of the monocrystalline silicon substrate;
s8: slotting the intrinsic hydrogenated amorphous silicon layer and the n-type hydrogenated amorphous silicon layer on the back surface by laser to expose the NiOx layer, wherein the laser is ultraviolet picosecond laser or ultraviolet nanosecond laser, and the patterning is designed by adopting a silk screen;
s8.1: removing residual intrinsic hydrogenated amorphous silicon and n-type hydrogenated amorphous silicon in the tank by adopting a KOH solution with the concentration of 2-5% to expose the NiOx layer;
s9: depositing a TCO film on the back surface, wherein the thickness is 70-100 nm;
s10: laser insulation, wherein green nanosecond laser with the wavelength of 532nm is used for insulation, and the insulation resistance value of a PN zone is tested to be larger than M omega;
s11: the preparation of the metal conductor and the subsequent electrical property test are all conventional in the art, and are not described herein again.
Example two
Different from the first embodiment, in step S3, the thickness of the buffer layer material NiOx is changed, so as to improve the back contact characteristics, that is, an ALD apparatus is used to evaporate and deposit a NiOx thin film on the back of the textured single crystal silicon substrate, the deposition sources are nickel carbonate and oxygen dissolved in dilute hydrochloric acid, the deposition source flow rate of the nickel carbonate is 120-.
EXAMPLE III
Different from the first embodiment, in step S3, the thickness of the buffer layer material NiOx is changed, so as to improve the back contact characteristics, that is, an ALD apparatus is used to evaporate and deposit a NiOx thin film on the back of the textured single crystal silicon substrate, the deposition sources are nickel carbonate and oxygen dissolved in dilute hydrochloric acid, the deposition source flow rate of the nickel carbonate is 120-150sccm, purging is performed for a short time after the end of the source flow rate, the source flow rate of the oxygen is 50-80sccm, and purging is performed for a short time after the end of the oxygen source flow rate, the four steps are a cycle, the cycle is continuously performed for 30 times, the deposition temperature is 280 degrees, and the thickness of the NiOx deposition is 50 nm.
The test performance of the solar cell prepared in the above example is shown in table 1 below
TABLE 1
| Area/cm 2 | 274.3 | 274.3 | 274.3 |
| current/A | 9.107 | 9.112 | 9.102 |
| Voc/mv | 720.3 | 718.6 | 715.5 |
| FF | 71.58 | 69.33 | 65.43 |
| Efficiency of | 17.12 | 16.55 | 15.53 |
As shown in Table 1, the HBC battery is prepared by mixing the back surface, so that the equipment investment cost for manufacturing the HBC is reduced, the front surface is free of shielding after the battery is prepared, the current is higher, and meanwhile, the battery structure combines partial advantages of the HBC battery, so that the disadvantage of repeatedly using the low-temperature PECVD is avoided, and the battery has more advantages in future mass production.
It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. A preparation method of a novel HBC solar cell is characterized by comprising the following steps:
s1: pre-cleaning, polishing and re-cleaning a monocrystalline silicon substrate;
s2: carrying out front-side texturing on the monocrystalline silicon substrate;
s3: evaporating and depositing a NiOx film on the back surface of the textured monocrystalline silicon substrate by adopting an ALD method or a PEALD method;
s4: depositing an intrinsic hydrogenated amorphous silicon layer on the back surface of the monocrystalline silicon substrate by adopting a PECVD method;
s5: grooving the intrinsic hydrogenated amorphous silicon layer and the NiOx film on the back surface by laser, and opening a region to be deposited by the N-type material;
s6: carrying out surface hydrophobic treatment on the monocrystalline silicon substrate by adopting HF;
s7: sequentially depositing an intrinsic hydrogenated amorphous silicon layer and an n-type hydrogenated amorphous silicon layer on the back surface of the monocrystalline silicon substrate by adopting a PECVD method, and sequentially depositing an intrinsic hydrogenated amorphous silicon layer and a SiNx layer on the front surface of the monocrystalline silicon substrate;
s8: slotting the intrinsic hydrogenated amorphous silicon layer and the n-type hydrogenated amorphous silicon layer on the back surface by laser to expose the NiOx layer;
s9: the back side deposits a TCO layer.
2. The method for preparing the HBC solar cell according to claim 1, wherein a layer of SiNx is deposited on the back side as a protective layer when texturing the front side of the single crystal silicon, and is removed by using HF solution and HCl solution after texturing.
3. The method of claim 2, wherein in step S4, the NiOx film is deposited from nickel carbonate dissolved in dilute hydrochloric acid and oxygen.
4. The method for preparing a novel HBC solar cell according to claim 1, wherein in step S4, the NiOx thin film has a thickness in the range of 20-50 nm.
5. The method of claim 1, wherein in step S6 the single crystal silicon substrate is introduced into a dilute sulfuric acid bath to completely remove NiOx residue from the trench area, followed by HF treatment.
6. The method of claim 1, wherein the patterning of the trench regions and the metallization pattern of steps S5 and S8 are consistent.
7. The method of claim 1, wherein a diluted KOH solution is used to remove the intrinsic hydrogenated amorphous silicon and n-type hydrogenated amorphous silicon remaining in the tank before step S9.
8. The method according to claim 1, wherein after step S9, a green nanosecond laser with a wavelength of 532nm is used for insulation, and the insulation resistance value of the PN region is tested.
9. The method for preparing the novel HBC solar cell according to claim 1, wherein in step S1, a monocrystalline silicon substrate is pre-cleaned with a KOH solution of 5% -9% concentration, polished with a polishing machine with a KOH solution of 3% -8% concentration, and then cleaned with a KOH solution and a hydrogen peroxide solution.
10. The method of claim 1, wherein in step S7, the thickness of the intrinsic hydrogenated amorphous silicon layer is 15-30nm, the thickness of the n-type hydrogenated amorphous silicon layer is 20-40nm, the thickness of the intrinsic hydrogenated amorphous silicon layer is 15-30nm, and the thickness of the SiNx layer is 80 ± 20 nm.
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| CN115548170A (en) * | 2022-10-27 | 2022-12-30 | 隆基绿能科技股份有限公司 | HBC solar cell and preparation method thereof |
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| CN101802948A (en) * | 2007-07-23 | 2010-08-11 | 巴斯夫欧洲公司 | Photovoltaic tandem cell |
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| CN115548170A (en) * | 2022-10-27 | 2022-12-30 | 隆基绿能科技股份有限公司 | HBC solar cell and preparation method thereof |
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