CN101499502A - Crystalline silicon solar cell and its passivation method - Google Patents
Crystalline silicon solar cell and its passivation method Download PDFInfo
- Publication number
- CN101499502A CN101499502A CNA2009100248951A CN200910024895A CN101499502A CN 101499502 A CN101499502 A CN 101499502A CN A2009100248951 A CNA2009100248951 A CN A2009100248951A CN 200910024895 A CN200910024895 A CN 200910024895A CN 101499502 A CN101499502 A CN 101499502A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- solar cell
- silicon solar
- solar energy
- energy battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for passivating a crystalline silicon solar cell. The method comprises the following steps: firstly, a silicon chip after secondary cleaning of removing phosphosilicate glass is oxidized at the temperature of 800 to 850 DEG C in the oxidation atmosphere, so as to form an oxidizing layer with the thickness of 5 to 20nm on the diffusing surface of the silicon chip; and secondly, a SiNx film with the thickness of 55 to 65 nm and the corresponding refractive index is 2.0 to 2.2 is deposited on the oxidizing layer of the silicon chip prepared in the first step. The method combines the excellent surface passivation of the thermal growth of SiO2 and the H passivation of the deposited SiNx film, reduces the surface compound rate of the silicon chip, improves the short-wave response of the solar cell, and enhances the photoelectric conversion efficiency of the solar cell.
Description
Technical field
The present invention relates to a kind of solar cell, be specifically related to a kind of crystal silicon solar energy battery and passivating method thereof.
Background technology
Solar energy is human inexhaustible, nexhaustible regenerative resource, also is clean energy resource, uses solar energy can effectively alleviate environmental pollution, and the solar photoelectric utilization is one of with fastest developing speed, most active in the last few years research field.Solar cell is mainly based on the work of semi-conducting material, thereby its operation principle is a photoelectric material to be absorbed and produce electron hole pair behind the luminous energy and produce photoelectric current.At present, extensively the solar cell that adopts is a silicon solar cell, and it is divided into single crystal silicon solar cell, polycrystalline silicon solar cell and amorphous silicon battery etc. again.Wherein the conversion efficiency of monocrystaline silicon solar cell is the highest, and technology is also the most ripe.
In the prior art, the process route of crystal-silicon solar cell suitability for industrialized production is: silicon chip cleans and matte preparation-diffusion system PN junction-plasma etching trimming-secondary cleaning dephosphorization silex glass-positive counterelectrode of deposition antireflective coating-silk screen printing and back of the body electric field-sintering.Wherein, the deposition antireflective coating mainly contains following three effects: (1) antireflective effect, promptly reduce solar cell to reflection of light, thereby improve the photoelectric conversion efficiency of solar cell; (2) surface passivation effect, the surface recombination of minimizing battery is improved battery performance; (3) body passivation, promptly the defect and impurity in the passivation cell body improves battery efficiency.In the prior art, the passivating method of crystal silicon solar energy battery mainly is to adopt plasma reinforced chemical vapour deposition method (PECVD) deposition SiN
XFilm.Because SiN
XIn hydrogen can discharge, the part hydrogen molecule is by mode such as combining with room in the silicon, transfer hydrogen atom or hydrogen-double-void to, diffuse in the polysilicon body, dangling bonds on hydrogen and the crystal boundary or other defect, the impurity in the cell body combine, thereby play the effect of passivation crystal boundary, defective or impurity.
Yet, directly deposit the SiNx film at silicon chip surface, can make that SiNx/Si lattice mismatch at the interface is serious, passivation effect is bad.Therefore, develop a kind of new passivating method of crystal silicon solar energy battery,, improve the photoelectric conversion efficiency of solar cell, positive effect with reality to reduce the recombination rate of silicon chip surface.
Summary of the invention
The purpose of this invention is to provide a kind of crystal silicon solar energy battery and passivating method thereof, make the solar cell of its acquisition have higher photoelectric conversion efficiency.
To achieve the above object of the invention, the technical solution used in the present invention is: a kind of passivating method of crystal silicon solar energy battery comprises the steps:
(1) silicon chip that will finish after the secondary cleaning dephosphorization silex glass step carries out oxidation processes under 800～850 ℃ of oxidizing atmospheres, and making and generating thickness on the diffusingsurface of silicon chip is the oxide layer of 5～20nm;
(2) deposit SiN on the oxide layer of the silicon chip that step (1) is obtained
XFilm, described SiN
XThe thickness of film is 55～65nm, and respective indices of refraction is 2.0～2.2.
Above, the silicon chip in the described step (1) after the secondary cleaning dephosphorization silex glass step is meant to clean with matte preparation-diffusion through silicon chip makes the silicon chip that carries out secondary cleaning behind PN junction-plasma etching trimming, and these steps are prior art; And described oxidation processes operation is existing heat growth SiO
2Method; SiN in the described step (2)
XThe chemical constituent of film is SiN
X: H, wherein X is 1～1.5, described depositional mode can be any existing Chemical Physics deposition processs such as PECVD, magnetron sputtering.
In the technique scheme, the oxidation treatment time in the described step (1) is 10～20min.
The present invention asks for protection the crystal silicon solar energy battery as the passivating method acquisition of above-mentioned crystal silicon solar energy battery simultaneously.Certainly, the silicon chip after the passivation also need carry out screen printing electrode and step such as back of the body electric field-sintering etc., and obtaining crystal silicon solar energy battery, and these steps are prior art.
Operation principle of the present invention is: the silica of heat growth is under the effect of drift field, and the dangling bonds of a large amount of saturated silicon chip surfaces reduce minority carrier compound on the surface effectively, thereby obtain surface passivation effect preferably.
Because the employing of technique scheme, compared with prior art, the present invention has following advantage:
1. the present invention is at deposition SiN
XCarry out oxidation processes before the film, combined heat growth SiO
2Good surface passivation effect and deposition SiN
XThe H passivation of film makes SiO
2/ Si lattice no-float has at the interface reduced the recombination rate of silicon chip surface, has improved the short wave response of solar cell, has improved the short circuit current and the open circuit voltage of solar cell, thereby reaches the purpose of the photoelectric conversion efficiency that promotes solar cell.
2. method of the present invention is simple, has a good application prospect, and is suitable for large-scale industrial production.
Description of drawings
Accompanying drawing 1 is the measure spectrum response curve comparison diagram of the embodiment of the invention one and Comparative Examples one.
Embodiment
Below in conjunction with embodiment the present invention is further described, but should limit protection scope of the present invention with this:
Embodiment one
300 of a certain batch slice, thin pieces are cleaned with matte preparation-diffusion at silicon chip make after PN junction-plasma etching trimming-secondary cleaning dephosphorization silex glass is finished, silicon chip is put in the oxidation furnace, oxidation 10 minutes under 800 ℃ the condition under oxidizing atmosphere; Adopt PECVD method deposition SiN then
XFilm, SiN
XThe thickness of film is 65nm, and refractive index is 2.2, carries out silk screen printing and sintering at last, obtains one group of crystal silicon solar energy battery.
At AM1.5, measure its average electrical performance parameter under 25 ℃ of conditions of temperature, i.e. open circuit voltage Voc, short circuit current Isc, fill factor, curve factor FF, photoelectric conversion efficiency EFF, the result is as shown in the table:
| Unit for electrical property parameters | Voc(mV) | Isc(A) | FF(％) | EFF(％) |
| The result | 627 | 5.39 | 76.98 | 17.53 |
Data in the The above results all are the mean value of mass data.
Embodiment two
300 of a certain batch silicon chips are cleaned with matte preparation-diffusion at silicon chip make after PN junction-plasma etching trimming-secondary cleaning dephosphorization silex glass is finished, silicon chip is put in the oxidation furnace, oxidation 15 minutes under 825 ℃ the condition under oxidizing atmosphere; Adopt PECVD method deposition SiN then
XFilm, SiN
XThe thickness of film is 60nm, and refractive index is 2.1, carries out silk screen printing and sintering at last, obtains one group of crystal silicon solar energy battery.
At AM1.5, measure its average electrical performance parameter under 25 ℃ of conditions of temperature, i.e. open circuit voltage Voc, short circuit current Isc, fill factor, curve factor FF, photoelectric conversion efficiency EFF, the result is as shown in the table:
| Unit for electrical property parameters | Voc(mV) | Isc(A) | FF(％) | EFF(％) |
| The result | 628.9 | 5.41 | 75.99 | 17.4 |
Data in the The above results all are the mean value of mass data.
Embodiment three
300 of a certain batch silicon chips are cleaned with matte preparation-diffusion at silicon chip make after PN junction-plasma etching trimming-secondary cleaning dephosphorization silex glass is finished, silicon chip is put in the oxidation furnace, oxidation 20 minutes under 850 ℃ the condition under oxidizing atmosphere; Adopt PECVD method deposition SiN then
XFilm, SiN
XThe thickness of film is 55nm, and refractive index is 2.0, carries out silk screen printing and sintering at last, obtains one group of crystal silicon solar energy battery.
At AM1.5, measure its average electrical performance parameter under 25 ℃ of conditions of temperature, i.e. open circuit voltage Voc, short circuit current Isc, fill factor, curve factor FF, photoelectric conversion efficiency EFF, the result is as shown in the table:
| Unit for electrical property parameters | Voc(mV) | Isc(A) | FF(％) | EFF(％) |
| The result | 628.3 | 5.41 | 75.06 | 17.17 |
Data in the The above results all are the mean value of mass data.
Comparative Examples one:
With 300 ordinary production explained hereafter of same batch silicon chip, promptly clean with matte preparation-diffusion system PN junction-plasma etching trimming-secondary cleaning dephosphorization silex glass-deposition antireflective coating-screen printing electrode and back of the body electric field-sintering and prepare one group of crystal silicon solar energy battery according to silicon chip according to solar cell.
At AM1.5, measure its average electrical performance parameter under 25 ℃ of conditions of temperature, i.e. open circuit voltage Voc, short circuit current Isc, fill factor, curve factor FF, photoelectric conversion efficiency EFF, the result is as shown in the table:
| Unit for electrical property parameters | Voc(mV) | Isc(A) | FF(％) | EFF(％) |
| The result | 618.6 | 5.27 | 77.26 | 16.95 |
Data in the The above results all are the mean value of mass data.
By embodiment and Comparative Examples as can be seen, the effect that adopts technical scheme of the present invention to obtain is: the open circuit voltage of solar cell and short circuit current have all been obtained tangible improvement; The measure spectrum response curve can see, will be higher than common solar cell in the response of short-wave band, as shown in Figure 1; The conversion efficiency of solar cell has had about 0.25～0.58% raising.
Claims (3)
1. the passivating method of a crystal silicon solar energy battery is characterized in that, comprises the steps:
(1) silicon chip that will finish after the secondary cleaning dephosphorization silex glass step carries out oxidation processes under 800～850 ℃ of oxidizing atmospheres, and making and generating thickness on the diffusingsurface of silicon chip is the oxide layer of 5～20nm;
(2) deposit SiN on the oxide layer of the silicon chip that step (1) is obtained
XFilm, described SiN
XThe thickness of film is 55～65nm, and respective indices of refraction is 2.0～2.2.
2. the passivating method of crystal silicon solar energy battery according to claim 1, it is characterized in that: the oxidation treatment time in the described step (1) is 10～20min.
3. the crystal silicon solar energy battery that obtains of the passivating method of crystal silicon solar energy battery as claimed in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100248951A CN101499502A (en) | 2009-03-02 | 2009-03-02 | Crystalline silicon solar cell and its passivation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100248951A CN101499502A (en) | 2009-03-02 | 2009-03-02 | Crystalline silicon solar cell and its passivation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101499502A true CN101499502A (en) | 2009-08-05 |
Family
ID=40946469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100248951A Pending CN101499502A (en) | 2009-03-02 | 2009-03-02 | Crystalline silicon solar cell and its passivation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101499502A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169924A (en) * | 2011-03-11 | 2011-08-31 | 浙江贝盛光伏股份有限公司 | Crystalline silica solar battery and method for passivating the same |
| CN102945890A (en) * | 2012-10-25 | 2013-02-27 | 晶澳太阳能有限公司 | Process for implementing qualification of potential-induced decay of crystalline silicon battery assembly |
| CN103066163A (en) * | 2013-01-24 | 2013-04-24 | 山东力诺太阳能电力股份有限公司 | Crystalline silicon solar cell diffusion method |
| CN103094418A (en) * | 2013-01-24 | 2013-05-08 | 山东力诺太阳能电力股份有限公司 | Solar cell preparation method |
| CN104167460A (en) * | 2013-05-17 | 2014-11-26 | 李岱殷 | Manufacturing method of solar energy cell |
-
2009
- 2009-03-02 CN CNA2009100248951A patent/CN101499502A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169924A (en) * | 2011-03-11 | 2011-08-31 | 浙江贝盛光伏股份有限公司 | Crystalline silica solar battery and method for passivating the same |
| CN102945890A (en) * | 2012-10-25 | 2013-02-27 | 晶澳太阳能有限公司 | Process for implementing qualification of potential-induced decay of crystalline silicon battery assembly |
| CN102945890B (en) * | 2012-10-25 | 2015-06-10 | 晶澳太阳能有限公司 | Process for implementing qualification of potential-induced decay of crystalline silicon battery assembly |
| CN103066163A (en) * | 2013-01-24 | 2013-04-24 | 山东力诺太阳能电力股份有限公司 | Crystalline silicon solar cell diffusion method |
| CN103094418A (en) * | 2013-01-24 | 2013-05-08 | 山东力诺太阳能电力股份有限公司 | Solar cell preparation method |
| CN103094418B (en) * | 2013-01-24 | 2016-01-13 | 山东力诺太阳能电力股份有限公司 | Solar cell preparation method |
| CN104167460A (en) * | 2013-05-17 | 2014-11-26 | 李岱殷 | Manufacturing method of solar energy cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2021031500A1 (en) | Solar cell with composite dielectric passivation layer structure, and preparation process therefor | |
| WO2021068644A1 (en) | Efficient back passivation crystalline silicon solar cell and manufacturing method therefor | |
| WO2023178918A1 (en) | Low-cost contact-passivation all-back electrode solar cell and preparation method therefor | |
| CN101548395B (en) | Method of manufacturing crystalline silicon solar cells with improved surface passivation | |
| EP2782146B1 (en) | Method for manufacturing a solar cell with reduced potential induced degradation | |
| CN112490304A (en) | Preparation method of high-efficiency solar cell | |
| CN105355723B (en) | Preparation method of silicon dioxide passivation film of crystalline silicon solar cell | |
| CN102751371B (en) | Solar thin film battery and manufacturing method thereof | |
| CN110620159B (en) | Preparation method of P-TOPCon photovoltaic solar cell structure | |
| CN102403369A (en) | Passivation dielectric film for solar cell | |
| CN109860324A (en) | The back side is passivated contact solar cell and preparation method thereof entirely | |
| CN110137305A (en) | A kind of preparation method of p-type polysilicon selective emitter double-side cell | |
| AU2023350326A1 (en) | Solar cell and manufacturing method therefor | |
| CN101499502A (en) | Crystalline silicon solar cell and its passivation method | |
| CN108922937A (en) | The boron doping emitter structure and preparation method of HIT solar cell | |
| WO2022156101A1 (en) | Solar cell stack passivation structure and preparation method therefor | |
| CN104112795B (en) | A kind of production method of silicon heterogenous solar cell | |
| CN117153948A (en) | Passivation contact solar cell preparation method | |
| CN112768534A (en) | Silicon oxide passivated PERC double-sided battery and preparation method thereof | |
| CN104064623A (en) | Post-treatment method for increasing conversion efficiency of solar cell | |
| CN218160392U (en) | Solar cell | |
| JP2002277605A (en) | Method for depositing antireflection film | |
| CN115566100A (en) | Solar cell and preparation method thereof | |
| CN102169924A (en) | Crystalline silica solar battery and method for passivating the same | |
| CN109461783A (en) | A kind of two-sided crystal silicon solar batteries and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20090805 |