CN104064623B - A kind of post-processing approach for lifting solar cell conversion efficiency - Google Patents
A kind of post-processing approach for lifting solar cell conversion efficiency Download PDFInfo
- Publication number
- CN104064623B CN104064623B CN201410226317.7A CN201410226317A CN104064623B CN 104064623 B CN104064623 B CN 104064623B CN 201410226317 A CN201410226317 A CN 201410226317A CN 104064623 B CN104064623 B CN 104064623B
- Authority
- CN
- China
- Prior art keywords
- solar cell
- substrate
- silicon
- front surface
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 41
- 238000012805 post-processing Methods 0.000 title claims abstract description 32
- 238000013459 approach Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims abstract description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 48
- 230000008569 process Effects 0.000 claims abstract description 39
- 238000001035 drying Methods 0.000 claims abstract description 37
- 238000002360 preparation method Methods 0.000 claims abstract description 33
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 32
- 230000008021 deposition Effects 0.000 claims abstract description 26
- 238000009792 diffusion process Methods 0.000 claims abstract description 25
- 239000002243 precursor Substances 0.000 claims abstract description 25
- 238000005245 sintering Methods 0.000 claims abstract description 25
- 239000007864 aqueous solution Substances 0.000 claims abstract description 24
- 238000004140 cleaning Methods 0.000 claims abstract description 23
- 238000000137 annealing Methods 0.000 claims abstract description 19
- 238000000576 coating method Methods 0.000 claims abstract description 16
- 238000012360 testing method Methods 0.000 claims abstract description 15
- 238000005507 spraying Methods 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 235000008216 herbs Nutrition 0.000 claims abstract description 11
- 210000002268 wool Anatomy 0.000 claims abstract description 11
- 238000007650 screen-printing Methods 0.000 claims abstract description 9
- 150000004767 nitrides Chemical class 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims description 59
- 229910052710 silicon Inorganic materials 0.000 claims description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 52
- 239000006117 anti-reflective coating Substances 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 25
- 239000000243 solution Substances 0.000 claims description 21
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical group [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 19
- 229920000642 polymer Polymers 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 239000002002 slurry Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910003978 SiClx Inorganic materials 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 6
- 210000004027 cell Anatomy 0.000 description 143
- 239000010410 layer Substances 0.000 description 71
- 239000010408 film Substances 0.000 description 35
- 230000000694 effects Effects 0.000 description 33
- 230000005611 electricity Effects 0.000 description 9
- 235000015220 hamburgers Nutrition 0.000 description 9
- 230000001476 alcoholic effect Effects 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- -1 laughing gas) Chemical compound 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000003854 Surface Print Methods 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000011712 cell development Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004870 electrical engineering Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 208000032953 Device battery issue Diseases 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 210000004247 hand Anatomy 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of post-processing approach for lifting solar cell conversion efficiency, with the solar cell for preparing as substrate, carries out aftertreatment technology in the solar cell front surface for preparing.Which realizes that flow process is divided into two sections on the whole：First segment is conventional solar cell preparation flow：Making herbs into wool is cleaned and drying, High temperature diffusion, secondary cleaning, nitride deposition, silk screen printing and sintering test, and second section is post processing flow process：The drying of precursor aqueous solution deposition and test of annealing.The present invention adopts spraying process cvd silicon oxide precursor aqueous solution in the front surface of solar cell substrate, forms membranous layer of silicon oxide, obtain " silicon oxide/silicon nitride " double layer antireflection coating after drying, annealing.
Description
Technical field
The present invention relates to the post-processing approach of a kind of solar cell, especially crystal-silicon solar cell.
Background technology
Solar cell development, the main task of production are reduces costs, improve conversion efficiency, and ensure stablizing during use
Property.Reduces cost can by material replace (Yehua Tang, Chunlan Zhou, Wenjing Wang, et.al., Solar Energy,
Vol.95,2013:Mode 265-270) realizes that conversion efficiency is lifted various implementations, including reduces surface reflectivity
(Yehua Tang,Chunlan Zhou,Su Zhou,et.al.,Chinese Journal of Chemical Physics,Vol.26(1),
2013:102-108), battery structure improve (CAS Electrical Engineering Research Institute, a kind of method of boron (B) diffusing, doping,
201210301219.6) and device structure transformation (CAS Electrical Engineering Research Institute, a kind of Furnace mouth reflux part for diffusion furnace,
201210073355.4).For solar cell stability in use, voltage induced attenuation (Potential Induced Degradation：
PID) effect becomes one of hot issue of current extensive concern.Solar cell in running, system voltage make frame and
A back bias voltage is defined between cell piece, causes component output to reduce, it is this as bias induces the power attenuation for causing
Phenomenon is referred to as voltage induced attenuation (i.e. PID) effect.Bias size depends on array quantity, inverter style and component in battle array
Location in row, the bias value for installing the solar panel formation of diverse location in an array are different, cause different journeys
The electric leakage of degree, therefore the degree of PID effects is also different.
In order to slow down the impact of PID effects, carry out redesigning from modular construction, install in terms of monitoring and adjuvant performance improvement etc.
Handss can actually realize the alleviation of PID effects, but and cannot inherently eliminate the impact of PID effects.People once thought,
Solar cell production process and technological process change do not interfere with solar cell application, but situation contrast.Solar cell piece
It is the most basic unit of photovoltaic module application, which prepares each flow process, step, technological parameter and material therefor etc. and component is used
Stability have vital effect, component application can be impacted.During solar module forces glass under high bias
Sodium formed cation, sodium ion free movement through packaging adhesive film to solar battery surface spread, in the nitrogen of solar battery surface
The aggregation of SiClx film layer (V.Naumann, C.Hagendorf, S.Grosser, M.Werner, J.Bagdahn, Energy Procedia,
Proceedings of the2ndinternational conference on crystalline silicon photovoltaics silicon PV2012,
Vol.27,2012:1-6), the electric field that formed and solar cell emitter interface electric field are overlapped mutually and weaken the effect of pn-junction,
Reduce local parallel resistance and form local electric leakage, cause battery failure, therefore solar cell preparation flow, technique, parameter set
Meter is directly connected to the stability of application, affects the parameter of solar cell performance that PID effects all can be affected in application process
(Pingel S,Frank O,Winkler M,et al.,Photovoltaic Specialists Conference(PVSC),201035th
IEEE,2010:002817-002822.)。
Therefore, solar cell piece performance study and improvement is the essence place for eliminating PID effects in component application process.By
For relative other techniques of antireflective coating be more easily adjusted and control, thus the silicon nitride anti-reflecting film of solar cell front surface into
Actively praised highly at present one kind and one of widely used means.There is researcher to be studied to monofilm and improved：By entering
Row substrate surface pretreatment (process gas plasma bombardment or the bombardment of non-process gaseous plasma), or control technique
Parameter change antireflective coating sedimentary condition, improves antireflective coating refractive index, is subtracted by the leakage current or raising that suppress solar cell
The mode of the electrical conductivity of reflective coating alleviates component PID effects so as to reach preventing charged ion tired in antireflective coating surface layer
The purpose answered.Solar cell conversion efficiency can be caused to reduce however, antireflection film layer refractive index is improved.There is researcher using double-deck
Antireflective coating (Pingel S, Frank O, Winkler M, et al., Photovoltaic Specialists Conference (PVSC),
201035thIEEE.IEEE,2010:002817-002822.) at the same take into account light using and PID effects, make the solar cell can
Realize high conversion efficiency, and the performance with anti-PID effects.Also researcher employs the mode of double-layer reflection reducing coating, but
As a result show, for double layer antireflection coating, when antireflective coating reaches more than three layers, the PID effects realized are not
Having further improves, and cannot also eliminate the impact of PID effects.
It can be seen that, double layer antireflection coating is comparatively preferably to suppress in solar cell piece even to eliminate PID effects in component application
Method.There are various ways realize the preparation of solar battery surface double layer antireflection coating：Collosol and gel (R.B.Pettit,
C.J.Brinker,C.S.Ashley,Solar Cells,Vol.15,1985:267-278；Shui-Yang Lien,Dong-Sing Wuu,
Wen-Chang Yeh,et al.,Solar Energy Materials&Solar Cells,Vol.90,2006:2710-2719), thermal oxide
(J.Zhao,A.Wang,P.Altermatt,M.A.Green,Applied Physics Letters,Vol.66,1995:3636-36338)、
Be evaporated in vacuo (Jianhua Zhao, Aihua Wang, Martin A.Green, IEEE transactions on electron devices,
Vol.41(9),1994:1592-1594) etc..Wherein spin coating collosol and gel is directly easy in the double antireflective coatings of substrate surface preparation
The pollution of substrate surface is caused, be there is no good hydrogen passivation effect yet, and spin coating mode is unfavorable for Industry Promotion；High warm
Mode of oxidizing can realize good surface passivation effect, but pyroprocess easily causes impurity pollution, and time-consuming, unfavorable
In production cost control；And be evaporated in vacuo equipment cost it is higher, yield poorly, be also unfavorable for production transition.Production at present is upper general
All over stable, easily-controllable, simple to operate plasma reinforced chemical vapour deposition (PECVD) method is adopted, based on this technology mode,
Researcher studies the film layer of anti-PID effects, and what is had deposits the antireflective of different refractivity by controlling technological parameter in substrate surface
Film layer (S.Winderbaum, F.Yun, O.Reinhold, Journal of Vacuum Science and Technology A, Vol.15
(3),1997:1020-1025), domestic Ye You producers adopt in this way to prepare the antireflection film layer (Zhenjiang with anti-PID
Complete works of Solar Co., Ltd, the solar battery sheet and its manufacture method of anti-PID effects, 201310201143.4)；Due to
Amorphous silicon layer has more preferable electric conductivity, and accumulation in component glued membrane, some producers can be avoided to be prepared for " non-crystalline silicon/silicon nitride "
(Tianhe Optical Energy Co., Ltd., Changzhou is resistant to PID effects to the antireflection film layer of " silicon nitride/non-crystalline silicon/silicon nitride " structure
Solar cell passivated reflection reducing membrane, 201310008588.0).Also what is had imports different precursor gas, is sequentially depositing different film layers
Constitute passivated reflection reducing and penetrate film layer, after such as importing nitrous oxide (i.e. laughing gas), " silicon oxide/silicon nitride " bilayer can be prepared into and subtracted
Reflectance coating (CECEP Solar Energy Technology (Zhenjiang) Co., Ltd., a kind of crystal silicon solar electrode of anti-PID effects and its
Preparation method, 201310354011.5；Shanghai Shenzhou New Energy Development Co., Ltd., a kind of anti-PID crystal silicon solar batteries,
201320484943.7)；" nitridation silicon/oxidative silicon " anti-PID double layer antireflection coatings (Zhenjiang complete works solar energy can also be prepared into
Company limited, the crystalline silicon battery plate with anti-PID effects plated film, 201320292810.X)；" nitrogen silicon can also be prepared into
The anti-PID double layer antireflection coatings of oxygen/silicon oxide " (Dongfang Electric (Yixing) MAGI Solar Power Technology Co., Ltd., one
Plant and prepare the antireflective coating method with anti-PID effects).Additionally, electroplating the laser doping selective emitter sun in photoinduction
In evolution prepared by the research of battery, a kind of new double antireflection film layer preparation methods are yet forms both：PECVD is adopted first
Mode deposits single-layer silicon nitride film layer, and silicon oxide film (Zhou is deposited on silicon nitride film layer using spin coating mode again then
Chunlan,Li Tao,Song Yang,et al.,Solar Energy,Vol.85,2011:3057-3063), prepare " silicon oxide/
The selective emitter solar battery of silicon nitride " double-layer reflection-decreasing membrane structure, its main purpose are prevented using the silicon oxide layer of spin coating
Only there is transitional phenomenon in photoinduction electroplating process, to avoid the reduction (Chinese Academy of Sciences electrician research of solar cell conversion efficiency
Institute, number of patent application：201110177712.7), comparatively, the preparation method of this double layer antireflection coating is simple, low cost,
But spin coating mode is unfavorable for industrialization industry making the transition.
In sum, double antireflective coatings are in itself avoiding even eliminating PID effects in component application process from solar cell
One of major way.For from membranous layer property, the antireflection film layer of high index of refraction can cause light absorbs to increase, and suppress the sun
Cell light is utilized, so as to reduce solar cell conversion efficiency；And the antireflection film layer of low-refraction is unfavorable for anti-PID effects
Affect.From for preparation method, spin coating collosol and gel mode is unfavorable for that industrialization realization, high-temperature oxydation mode production cost are too high
And the cycle is long, and vacuum evaporation mode is not suitable for solar cell production yet.Thus, invent mode that is succinct, being easy to industrialization
Both double layer antireflection coatings with anti-PID effects are prepared, conversion efficiency can be lifted again, become the tight of current solar cell development
One of anxious task.
The content of the invention
The purpose of the present invention is to overcome the shortcomings of above-mentioned double layer antireflection coating preparation method, proposes a kind of post processing side of solar cell
Method, realizes the preparation of solar cell duplicature.Using a kind of post-processing approach for lifting sun conversion efficiency of the present invention to often at present
Rule solar cell carries out post processing, not only enables solar cell resist PID effects, and can effectively improve turning for solar cell
Efficiency is changed, its conversion efficiency can be made to lift more than 0.2% (abs.).
A kind of post-processing approach for lifting solar cell conversion efficiency of the present invention, the sun electricity that its feature is that to prepare at present
Pond is substrate, carries out aftertreatment technology in the solar cell front surface for preparing and completes.Specifically, it is according to current
Method prepares solar cell, with the solar cell for preparing as substrate, carries out post processing in its front surface, i.e., using the side of spraying
Formula forms membranous layer of silicon oxide after the solar cell front surface cvd silicon oxide precursor aqueous solution for preparing, drying, annealing, so as to
Realize the preparation of solar cell front surface " silicon oxide/silicon nitride " double layer antireflection coating.
A kind of post-processing approach for lifting solar cell conversion efficiency of the present invention, which realizes that flow process is divided into two sections on the whole：First segment
For conventional solar cell preparation flow, technical process is making herbs into wool cleaning, High temperature diffusion, secondary cleaning, nitride deposition, silk screen
Printing and sintering, test, second section is post processing flow process：Precursor aqueous solution is deposited and is annealed, test.
The processing step of post-processing approach of the present invention is specific as follows：
First segment conventional solar cell preparation flow, including：
(1) (1) making herbs into wool is cleaned and is dried
Corrosion cleaning substrate surface to be prepared.For monocrystalline silicon piece substrate adopts aqueous slkali：Potassium hydroxide or sodium hydroxide are molten
Liquid is corroded；For multicrystalline silicon substrate then carries out corrosion cleaning using the mixed solution of nitric acid and Fluohydric acid..The master of corrosion cleaning
The one of syllabus is to remove the damage layer of silicon chip surface, and to reduce recombination-rate surface, two are formed with good in substrate surface
The structure of anti-reflective effect, is utilized with the incident illumination for improving solar cell.It is after etching, fully clear using high purity deionized water
Substrate is washed, then substrate surface is fully dried；
(2) High temperature diffusion
The substrate that step (1) is prepared is diffused in diffusion furnace under the conditions of 800～900 DEG C, makes table before silicon chip
Face thin layer realizes transoid due to impurity compensation, forms crystal-silicon solar cell emitter stage；
(3) secondary cleaning
After High temperature diffusion, substrate perimeter defines inversion layer, can cause the reduction of solar cell output parameter, it is therefore desirable in electricity
The inversion layer of substrate perimeter is removed before preparing by pond.The silicon chip that Jing steps (2) have spread is carried out into wet method and carves side, a side
Face removes the inversion layer that substrate back and periphery are formed, on the other hand, the phosphorus that will be formed in substrate front surface in step (2)
Silica glass layer is cleaned up, and is dried after fully cleaning；
(4) nitride deposition
Under the conditions of 300～500 DEG C, substrate prepared by step (3) is adopted into plasma reinforced chemical vapour deposition
(PECVD) method deposits the silicon nitride film of 80nm in its front surface, and the silicon nitride of deposition is both the antireflective coating of front surface,
And the passivation film of front surface；
(5) silk screen printing
Respectively in substrate back electrode district deposition of silver aluminium paste obtained in step (4) by the way of silk screen printing, after drying,
In the substrate back non-electrode region area deposition aluminum slurry, after drying, then silver paste is deposited in the substrate front surface；
(6) sintering, test
The substrate for preparing electrode is placed in Fast Sintering stove to be dried and sintered.The purpose of drying mainly by substrate back and
In front surface slurry, organic solvent fully volatilizees, then under the conditions of 780～850 DEG C of temperature ranges, air or nitrogen atmospheres
Sintering, makes to form good Ohmic contact by alloy mode between electrode and substrate, while realizing aluminum doping shape in substrate back
Into back surface field.
So far, the preparation of current conventional solar cell is completed, output performance test can be carried out to prepared solar cell；
Second section post processing flow process, including：
(7) precursor aqueous solution deposition
To complete the conventional solar cell of the step (1)-(6) as substrate, carry out lifting the rear place of conversion efficiency
Science and engineering skill.I.e. to prepare the conventional solar cell that completes as substrate, using spraying process solar cell front surface cvd silicon oxide
Precursor aqueous solution, is then dried under 100 DEG C of temperature, air atmosphere.Described silicon oxide precursor aqueous solution is organic solution,
Its solute is silicon-oxygen polymer, and solvent is ethanol or isopropanol, and concentration is 0.5～10.0%；
(8) annealing, test
By Jing steps (7) deposited the conventional solar cell of precursor aqueous solution 200～450 DEG C of temperature ranges, air or
Anneal under the conditions of nitrogen atmosphere 10～120s, forms membranous layer of silicon oxide.So far complete a kind of solar cell that lifted of the invention to turn
The post processing flow process of efficiency is changed, while the solar cell double layer antireflection coating knot of anti-PID is formed in conventional solar cell front surface
Structure.
Described step (1)-(6) are the preparation flows of current crystal-silicon solar cell production.The feature of the present invention exists
The conventional solar cell completed with current preparation in which deposits one layer of oxygen in solar cell front surface as substrate by the way of spraying
The precursor aqueous solution of SiClx thin film, i.e., described step (7)；It is in being further characterized in that described step (8) annealing process, front
Drive solution further to decompose, silicon oxide film is formed in solar cell front surface, so that solar cell front surface has " oxidation
Silicon/silicon nitride " double-layer reflection-decreasing membrane structure, becomes the solar cell with anti-PID effects.The membranous layer of silicon oxide has one
Determine carbon content.
The solar cell front surface prepared using the inventive method has double-layer reflection-decreasing membrane structure, can improve table before solar cell
The incident light utilization efficiency in face, improves solar cell short circuit current, so as to lift the conversion efficiency of solar cell.Table before solar cell
The gate electrode line of solar cell front surface can be covered and be sheltered by silicon oxide film that face is formed well, preferably avoid sun electricity
Pond front surface electrode grid line is oxidized, and strengthens the stability of solar cell performance.The membranous layer of silicon oxide tool that solar battery surface is formed
There is certain carbon content, film performance can be improved, reach the effect of the anti-PID effects of solar cell.
The present invention has advantages below：
(1) solar cell preparation flow is simple, is realized based on current solar cell customary preparation methods, with current production procedure
It is compatible, easily realize, without the need for additionally being trained to production, operator, save personnel cost；
(2) solvent for use is to common are machine solvent, with low cost；
(3) film deposition mode adopts spraying process, and process is simple is easy to operate, repeatable strong, and industrialization transition is fast；
(4) silicon oxide formed in existing solar cell front surface can reduce solar cell front-side reflectivity, be effectively improved
Solar cell short circuit current, improves solar cell conversion efficiency, makes solar cell conversion efficiency lift more than 0.2% (abs.)；
(5) solar cell for preparing has anti-PID characteristics, increased the stability of solar cell.
Description of the drawings
Fig. 1 the inventive method process flow diagrams；
Fig. 2 conventional solar cell structural representations；
Solar battery structure schematic diagram prepared by Fig. 3 the inventive method.
Specific embodiment
The present invention is further illustrated below in conjunction with the drawings and the specific embodiments.
The solar cell that the present invention is realized with the current general mode of production as substrate, by the way of spraying solar cell front table
Face cvd silicon oxide precursor aqueous solution, after drying under the conditions of 100 DEG C, then in the range of 200～450 DEG C, air or nitrogen
Anneal under ambient conditions 10～120s.
Fig. 1 show the inventive method schematic flow sheet, and the technological process of the inventive method is divided to two sections：The first segment routine sun
Battery preparation flow S-1 and second section post processing flow process S-2.
1st, the processing step of first segment conventional solar cell preparation flow S-1 is identical with current conventional solar cell preparation flow.
As shown in figure 1, first segment conventional solar cell preparation flow S-1 includes：
The making herbs into wool of step S-101 is cleaned and is dried：Silicon chip substrate N-010 is carried out into making herbs into wool cleaning and drying first；Using hydrogen
Potassium oxide or sodium hydroxide solution corrode to monocrystalline silicon piece, multicrystalline silicon substrate are corroded using acid solution, to remove silicon chip surface
Cutting damage layer, while make substrate surface formed with good anti-reflective effect body structure surface N-011, reduce solar cell
Surface reflection and surface carrier recombination rate, then fully cleaned using high purity deionized water and be dried silicon chip substrate N-
010；
Step S-102 High temperature diffusion：Silicon chip substrate N-010 after step S-101 is dried is in 800～900 DEG C of conditions
Under carry out high temperature phosphorous diffusion, make front surface carry out impurity compensation and transoid, prepare solar cell emitter N-012；
Step S-103 secondary wet process is cleaned：Silicon chip substrate N-010 Jing after step S-102 High temperature diffusion is carried out secondary
Cleaning, to remove the inversion layer that silicon chips periphery and the back side are formed in high-temperature diffusion process, while by before silicon chip substrate N-010
The phosphorosilicate glass layer that surface is formed is cleaned up, and is dried.
Step S-104 nitride deposition：It is after the completion of step S-103, silicon chip substrate N-010 is warm at 300～500 DEG C
Nitride deposition is carried out in the range of degree, using plasma reinforced chemical vapour deposition (PECVD) method in silicon chip substrate N-010
Front surface deposit 80nm silicon nitride anti-reflecting film N-013.The refractive index of silicon nitride anti-reflecting film layer N-013 is about
2.1, amorphous silicon nitride film layer is due to containing substantial amounts of hydrogen, therefore silicon nitride anti-reflecting film layer N-013 is for the sun
The also effect with surface passivation for battery, is reflected and recombination-rate surface with the surface for further reducing solar cell.
Step S-105 silk screen printing：The substrate back electrode district prepared in step S-104 by the way of screen printing
Deposition of silver aluminum slurry, after drying, in the non-electrode region deposition aluminum slurry of the substrate back, then dries, then in the substrate
Front surface electrode area deposits silver paste；
Step S-106 is sintered：Substrate obtained in step S-105 is placed in Fast Sintering stove, it is warm at about 780～850 DEG C
Degree scope is sintered so that form good ohm by alloy mode between the front surface and back surface electrode and substrate of substrate
Contact, becomes the front surface electrode N-014 and backplate N-015 of solar cell, while promoting back aluminium to mix in silicon
It is miscellaneous, form solar cell back surface field N-016.
So far, the preparation of conventional structure solar cell as shown in Figure 2 is completed, the front surface of the solar cell is silicon nitride
Single antireflection film.The conversion efficiency realized by the solar cell can be obtained by I-V tests.
2nd, second section post processing flow process S-2, including：
Step S-201 precursor aqueous solution deposition, drying：Using spraying process conventional solar cell obtained in first segment front surface
Cvd silicon oxide precursor aqueous solution：The silicon oxide precursor aqueous solution that the concentration for preparing is 0.5～10% is deposited by the way of spraying
In solar cell front surface, dry under the conditions of 100 DEG C.
The annealing of step S-202, test：The step S-201 i.e. solar cell of silicon oxide film precursor aqueous solution deposition will be completed
Anneal under the conditions of 200～450 DEG C of temperature ranges, air or nitrogen atmospheres 10～120s, the sun electricity under this annealing conditions
The silicon oxide precursor aqueous solution of pond front surface deposition is decomposed, and forms the membranous layer of silicon oxide M-017 with certain carbon content, oxygen
SiClx film layer M-017 uniform fold obtains front surface and has that " silicon oxide/silicon nitride " is double subtracts in whole solar cell front surface
The solar cell of reflecting film structure, as shown in figure 3, the solar cell has anti-PID effects.
Relative to conventional structure solar cell, have using solar cell prepared by the inventive method that " silicon oxide/silicon nitride " is double to be subtracted
Reflecting film structure, wherein outermost layer silicon oxide have certain carbon content, can effectively reduce surface reflectivity, improve sun electricity
The short circuit current in pond, enables the conversion efficiency of solar cell to improve more than 0.2% (abs.).
In specific examples below, making herbs into wool and secondary cleaning equipment are Rina equipment, High temperature diffusion, PECVD and flash baking
Sintering furnace is Centrotherm equipment, and screen process press is ASYS equipment, and solar cell test is Burger equipment.In order to
Can by the present invention specific implementation realize industrialization make the transition, by it is the organic solution of silicon-oxygen polymer post-depositional drying and move back
Fire carries out integrated, is dried and is annealed using Centrotherm flash baking sintering furnaces, and wherein drying temperature is 100 DEG C,
And peak lehr temperature be 200～450 DEG C, annealing time be 10～120s, the silicon oxide precursor aqueous solution concentration be 0.5～
10%.
Embodiment 1
1st, by 156 × 156mm2P-type crystal silicon chip (polycrystalline) acid corrosion making herbs into wool, fully clear is carried out in Rina equipment
It is standby after being dried up with nitrogen after washing；
2nd, Centrotherm High temperature diffusions/oxidation furnace temperature is increased to into 800 DEG C, the cleaning silicon wafer that step 1 is prepared is put
Putting carries out phosphorus diffusion in constant temperature zone, makes silicon chip front surface form n-type emitter stages；
3rd, silicon chip obtained in step 2 is carried out into secondary wet process etching, cleaning using Rina equipment, is on the one hand to remove substrate week
The inversion layer that side and the back side are formed in High temperature diffusion, is on the other hand to clean up phosphorosilicate glass layer；
4th, after completing step 3, silicon chip is directly placed at Centrotherm companies tubular type, and " Plasma Enhanced Chemical Vapor sinks
In product equipment ", the deposited silicon nitride antireflective coating under the conditions of 300 DEG C, institute deposited silicon nitride antireflective coating thickness about 80nm,
Refractive index about 2.1；
5th, adopt ASYS screen processes press in its back up silver aluminum slurry silicon chip obtained in step 4, republish after drying
Aluminum slurry, then the front surface printing silver paste after drying in silicon chip；
6th, the silicon chip that Jing steps 5 complete electrode print is placed in Centrotherm flash baking sintering furnaces carries out drying, burns
Knot, the peak temperature of sintering is 780 DEG C.So far complete the preparation of conventional solar cell.Its I-V characteristic is tested using Burger,
Conventional solar cell short circuit current is 8.695A, and conversion efficiency is 17.52%；
7th, prepare membranous layer of silicon oxide precursor aqueous solution：With ethanol as solvent, silicon-oxygen polymer is solute, prepares silicon-oxygen polymer
Alcoholic solution, solution concentration are 10.0%.With conventional solar cell obtained in step 6 as substrate, will by the way of spraying
The concentration prepared is the front surface that 10.0% silicon-oxygen polymer alcoholic solution is uniformly deposited on the conventional solar cell.
8th, the drying area temperature of Centrotherm flash baking sintering furnaces is set as into 100 DEG C, peak lehr under air atmosphere
Temperature is 300 DEG C, and annealing time is 120s, will complete step 7 i.e. front surface and deposited silicon-oxygen polymer alcoholic solution too
Positive electricity pond is sent to Centrotherm flash bakings sintering furnace and carries out drying, anneals.The forerunner of solar cell front surface deposition is molten
Liquid fully decomposes under annealing conditions, forms membranous layer of silicon oxide in front surface, so as to realize that solar cell has " silicon oxide/nitridation
Double antireflective coating structures of silicon ".So far complete with double antireflection film layers and anti-PID solar cells preparation.
9th, using the I-V characteristic of the double antireflective coating solar cells of Burger tests, its short circuit current is 8.814A, conversion efficiency
For 17.79%.Thus, conventional solar cell is entered using a kind of post-processing approach for lifting solar cell conversion efficiency of the present invention
After row post processing, realize that solar cell short circuit current improves 119mA, conversion efficiency improves 0.27%.
Embodiment 2
1st, by substrate be 156 × 156mm2P-type crystal silicon chip (polycrystalline) carry out in Rina equipment acid corrosion making herbs into wool,
It is standby after being dried up with nitrogen after fully cleaning；
2nd, Centrotherm High temperature diffusions/oxidation furnace temperature is increased to into 830 DEG C, the cleaning silicon wafer that step 1 is prepared is put
Putting carries out phosphorus diffusion in constant temperature zone, makes silicon chip front surface form n-type emitter stages；
3rd, silicon chip obtained in step 2 is carried out into secondary wet process etching, cleaning using Rina equipment, on the one hand removes substrate week
On the other hand phosphorosilicate glass layer is cleaned up by the inversion layer that side and the back side are formed in step 2 High temperature diffusion；
4th, silicon chip obtained in step 3 is directly placed at into Centrotherm companies tubular type " plasma reinforced chemical vapour deposition
In equipment ", the deposited silicon nitride antireflective coating under the conditions of 450 DEG C, the thickness about 80nm of institute's deposited silicon nitride antireflective coating,
Refractive index about 2.1；
5th, aluminium paste is republished in the silver-colored aluminum slurry of silicon chip back side printing obtained in step 4 using ASYS screen processes press after drying
Material, then silver paste is printed in silicon chip front surface after drying；
6th, the silicon chip for having printed electrode in Centrotherm flash baking sintering furnaces is carried out drying, is sintered, the peak value of sintering
Temperature is 830 DEG C.So far complete the preparation of conventional solar cell.The I-V characteristic of the conventional solar cell is tested using Burger,
The conventional solar cell short circuit current is 8.641A, and conversion efficiency is 17.39%；
7th, prepare membranous layer of silicon oxide forerunner molten：With ethanol as solvent, silicon-oxygen polymer is solute, prepares the wine of silicon-oxygen polymer
Smart solution, solution concentration are 8%.The conventional solar cell for completing is prepared as substrate with Jing steps 6, will by the way of spraying
The concentration prepared is the front surface that 8% silicon-oxygen polymer alcoholic solution is uniformly deposited on the conventional solar cell；
8th, the drying area temperature of Centrotherm flash baking sintering furnaces is set as into 100 DEG C, peak lehr under nitrogen atmosphere
Temperature is 200 DEG C, and annealing time is 30s, will complete step 7 i.e. front surface and deposited silicon-oxygen polymer alcoholic solution too
Positive electricity pond is sent to Centrotherm flash bakings sintering furnace and carries out drying, anneals.The forerunner of solar cell front surface deposition is molten
Liquid fully decomposes under annealing conditions, forms membranous layer of silicon oxide in front surface, so as to realize that solar cell has " silicon oxide/nitridation
Double antireflective coating structures of silicon ", so far complete with double antireflection film layers and anti-PID solar cells preparation.
9th, using the I-V characteristic of the double antireflective coating solar cells of Burger tests, its short circuit current is 8.742A, conversion efficiency
For 17.62%.Thus, conventional solar cell is entered using a kind of post-processing approach for lifting solar cell conversion efficiency of the present invention
After row post processing, realize that solar cell short circuit current improves 101mA, conversion efficiency improves 0.23%.
Embodiment 3：
1st, by 156 × 156mm2P-type crystal silicon chip (polycrystalline) acid corrosion making herbs into wool, fully clear is carried out in Rina equipment
It is standby after being dried up with nitrogen after washing；
2nd, Centrotherm High temperature diffusions/oxidation furnace temperature is increased to into 830 DEG C, the cleaning silicon wafer that step 1 is prepared is put
Putting carries out phosphorus diffusion in constant temperature zone, makes silicon chip front surface form n-type emitter stages；
3rd, the silicon chip for completing step 2 carries out secondary wet process etching, cleaning using Rina equipment, on the one hand removes substrate week
On the other hand phosphorosilicate glass layer is cleaned up by side and the inversion layer for overleaf being formed in High temperature diffusion；
4th, after completing step 3, silicon chip is directly placed at Centrotherm companies tubular type, and " Plasma Enhanced Chemical Vapor sinks
In product equipment ", the deposited silicon nitride antireflective coating under the conditions of 500 DEG C, institute deposited silicon nitride antireflective coating thickness about 80nm,
Refractive index about 2.1；
5th, using ASYS screen processes press in the silver-colored aluminum slurry of silicon chip back side printing obtained in step 4, again in this silicon chip after drying
Back up aluminum slurry, after drying, in the front surface printing silver paste of this silicon chip；
6th, the silicon chip that Jing steps 5 complete electrode print is placed in Centrotherm flash baking sintering furnaces carries out drying, burns
Knot, the peak temperature of sintering is 850 DEG C.So far complete the preparation of conventional solar cell.Its I-V characteristic is tested using Burger,
Conventional solar cell short circuit current is 8.607A, and conversion efficiency is 17.34%；
7th, prepare membranous layer of silicon oxide precursor aqueous solution：With isopropanol as solvent, silicon-oxygen polymer is solute, prepares silicon-oxygen polymer
Aqueous isopropanol, solution concentration is 10.0%.The conventional solar cell being prepared into step 6 as substrate, using spraying
Mode is uniformly deposited on the silicon-oxygen polymer aqueous isopropanol that the concentration prepared is 10.0% before the conventional solar cell
Surface；
8th, the drying area temperature of Centrotherm flash baking sintering furnaces is set as into 100 DEG C, peak lehr under air atmosphere
Temperature is 300 DEG C, and annealing time is 10s, will complete step 7 i.e. front surface and deposited silicon-oxygen polymer aqueous isopropanol
Solar cell is sent to Centrotherm flash bakings sintering furnace and carries out drying, anneals.The forerunner of solar cell front surface deposition
Solution fully decomposes under annealing conditions, front surface formed membranous layer of silicon oxide, so as to realize solar cell have " silicon oxide/
Double antireflective coating structures of silicon nitride ".So far complete with double antireflection film layers and anti-PID solar cells preparation.
9th, using the I-V characteristic of the double antireflective coating solar cells of Burger tests, its short circuit current is 8.762A, conversion efficiency
For 17.64%.Thus, conventional solar cell is carried out after post processing using post-processing approach of the present invention, solar cell short circuit electricity
Stream improves 155mA, and conversion efficiency improves 0.30%.
Embodiment 4：
1st, by substrate be 156 × 156mm2P-type crystal silicon chip (polycrystalline) carry out in Rina equipment acid corrosion making herbs into wool,
It is standby after being dried up with nitrogen after fully cleaning；
2nd, Centrotherm High temperature diffusions/oxidation furnace temperature is increased to into 900 DEG C, the cleaning silicon wafer that step 1 is prepared is put
Putting carries out phosphorus diffusion in constant temperature zone, makes silicon chip front surface form n-type emitter stages；
3rd, silicon chip obtained in step 2 is carried out into secondary wet process etching, cleaning using Rina equipment, on the one hand removes substrate week
On the other hand phosphorosilicate glass layer is cleaned up by the inversion layer that side and the back side are formed in step 2；
4th, silicon chip obtained in step 3 is directly placed at into Centrotherm companies tubular type " plasma reinforced chemical vapour deposition
In equipment ", the deposited silicon nitride antireflective coating under the conditions of 450 DEG C, the thickness about 80nm of institute's deposited silicon nitride antireflective coating,
Refractive index about 2.1；
5th, using ASYS screen processes press in the silver-colored aluminum slurry of silicon chip back side printing obtained in step 4, again in this silicon chip after drying
Back up aluminum slurry, after drying, in the front surface printing silver paste of this silicon chip；
6th, the silicon chip for having printed electrode in Centrotherm flash baking sintering furnaces is carried out drying, is sintered, the peak value of sintering
Temperature is 830 DEG C.So far complete the preparation of conventional solar cell.Its I-V characteristic, conventional solar cell are tested using Burger
Short circuit current is 8.593A, and conversion efficiency is 17.33%；
7th, prepare membranous layer of silicon oxide forerunner molten：With ethanol as solvent, silicon-oxygen polymer is solute, prepares the wine of silicon-oxygen polymer
Smart solution, solution concentration are 0.5%.The conventional solar cell for completing is prepared as substrate with step 6, will by the way of spraying
The concentration prepared is the front surface that 0.5% silicon-oxygen polymer alcoholic solution is uniformly deposited on the conventional solar cell；
8th, the drying area temperature of Centrotherm flash baking sintering furnaces is set as into 100 DEG C, peak lehr under nitrogen atmosphere
Temperature is 450 DEG C, and annealing time is 30s, will complete step 7 i.e. front surface and deposited silicon-oxygen polymer alcoholic solution too
Positive electricity pond is sent to Centrotherm flash bakings sintering furnace and carries out drying, anneals.The forerunner of solar cell front surface deposition is molten
Liquid fully decomposes under annealing conditions, forms membranous layer of silicon oxide in front surface, makes solar cell have " silicon oxide/silicon nitride "
Double antireflective coating structures, so far complete with double antireflection film layers and anti-PID solar cells preparation.
Using the I-V characteristic of the double antireflective coating solar cells of Burger tests, its short circuit current is 8.707A, and conversion efficiency is
17.55%.Thus, conventional solar cell is carried out after post processing using post-processing approach of the present invention, solar cell short circuit current is carried
High 114mA, conversion efficiency improve 0.22%.
Claims (4)
1. it is a kind of lifted solar cell conversion efficiency post-processing approach, it is characterised in that described post-processing approach include with
Lower step：
First segment, conventional solar cell preparation flow：
(1) making herbs into wool is cleaned and is dried：Corrosion cleaning substrate surface to be prepared, and be fully dried；
(2) High temperature diffusion：The substrate prepared in step (1) is carried out into phosphorus diffusion under 800～900 DEG C of hot conditionss,
Make silicon chip front surface thin layer transoid be realized due to impurity compensation, that is, realize the uniform diffusion of phosphorus, form crystal-silicon solar cell n-
Type emitter stages, that is, form uniform emission pole；
(3) secondary cleaning：The substrate spread in step (2) is carried out wet method to carve side, clean and be dried；
(4) nitride deposition：By substrate obtained in step (3) using plasma reinforced chemical vapour deposition method before substrate
Surface deposited silicon nitride antireflective coating；
(5) silk screen printing：Respectively in substrate front surface deposition silver paste obtained in step (4) by the way of silk screen printing,
In the electrode district deposition of silver aluminium paste of the substrate back surface, in the substrate back non-electrode region area deposition aluminum slurry；One is completed often
Drying and processing is carried out after planting slurry printed deposit；
(6) sintering, test：The substrate for completing step (5) silk screen printing is sintered, front surface silver slurry, the back of the body is made
Surface electrode area silver aluminium paste forms good electrode ohmic contact under the high temperature conditions with substrate, while making back surface non-electrode region aluminum
Slurry forms aluminum doping back surface field in substrate back surface by alloy mode with substrate under 780～850 DEG C of hot conditionss, i.e., entirely
Aluminum back surface field, completes the preparation of conventional solar cell；
Second section, post processing flow process：
(7) precursor aqueous solution deposition, drying：The conventional solar cell prepared with step (6) as substrate, using spraying process
Dried in its front surface cvd silicon oxide precursor aqueous solution and under the conditions of 100 DEG C, made organic solvent volatilization in precursor aqueous solution；
(8) annealing, test：By substrate obtained in step (7) in 200～450 DEG C of temperature ranges, air or nitrogen
Anneal under atmosphere 10～120s, the silicon oxide precursor aqueous solution of deposition fully volatilized, be decomposed to form membranous layer of silicon oxide；The oxygen
SiClx film layer not only improves the performance of conventional solar cell front surface depositional coating prepared by the first segment so as to good
Anti- PID characteristics, and further reduce first segment prepare conventional solar cell front-side reflectivity, realize conversion efficiency
Lifted；So far, complete to lift the post processing of solar cell conversion efficiency, make conventional solar cell that there is good anti-PID,
And make its conversion efficiency definitely lift more than 0.2%.
2. it is according to claim 1 lifted solar cell conversion efficiency post-processing approach, it is characterised in that after locate
The solar cell front surface of reason be " silicon oxide/silicon nitride " double antireflective coatings, the silicon oxide be with conventional solar cell as substrate,
Spraying process cvd silicon oxide precursor aqueous solution is adopted in front surface, is decomposed to form in annealing process after drying, the silicon oxide film
Film layer contains carbon.
3. it is according to claim 1 lifted solar cell conversion efficiency post-processing approach, it is characterised in that before described
Drive solution is organic solution, and wherein solute is silicon-oxygen polymer, and solvent is ethanol or isopropanol, the concentration of the precursor aqueous solution
For 0.5～10%.
4. it is according to claim 1 lifted solar cell conversion efficiency post-processing approach, it is characterised in that described step
Suddenly drying and the annealing of step (8) in (7) is carried out in same chain type production equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410226317.7A CN104064623B (en) | 2014-05-27 | 2014-05-27 | A kind of post-processing approach for lifting solar cell conversion efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410226317.7A CN104064623B (en) | 2014-05-27 | 2014-05-27 | A kind of post-processing approach for lifting solar cell conversion efficiency |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104064623A CN104064623A (en) | 2014-09-24 |
| CN104064623B true CN104064623B (en) | 2017-03-29 |
Family
ID=51552247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410226317.7A Expired - Fee Related CN104064623B (en) | 2014-05-27 | 2014-05-27 | A kind of post-processing approach for lifting solar cell conversion efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104064623B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538500B (en) * | 2015-01-06 | 2017-08-01 | 横店集团东磁股份有限公司 | PECVD plated films and sintering process for crystal silicon solar energy battery anti-LID and PID |
| CN106253850B (en) * | 2016-08-29 | 2018-09-14 | 奥特斯维能源（太仓）有限公司 | A kind of test method of the anti-PID performances of antireflective coating |
| CN112366251A (en) * | 2020-11-25 | 2021-02-12 | 河南安彩高科股份有限公司 | Preparation method of solar cell antireflection film |
| CN115172533A (en) * | 2022-08-12 | 2022-10-11 | 通威太阳能（安徽）有限公司 | Solar cell processing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102834930A (en) * | 2010-03-30 | 2012-12-19 | 应用材料公司 | Method of forming a negatively charged passivation layer over a diffused p-type region |
| CN102244145B (en) * | 2011-06-28 | 2013-08-21 | 中国科学院电工研究所 | Excessive-plating prevention dual-layer thin film as well as preparation method and application thereof |
| CN103618033A (en) * | 2013-12-05 | 2014-03-05 | 欧贝黎新能源科技股份有限公司 | Silk-screen printing production manufacturing method of passivated-back solar cell |
-
2014
- 2014-05-27 CN CN201410226317.7A patent/CN104064623B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN104064623A (en) | 2014-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2021031500A1 (en) | Solar cell with composite dielectric passivation layer structure, and preparation process therefor | |
| CN202585427U (en) | Passivation structure of solar cell | |
| CN109742172A (en) | The method of spin coating boron source laser doping production N-type selective emitter double-side cell | |
| CN105047742A (en) | Double-sided N-type crystalline silicon cell and preparation method thereof | |
| CN101821857A (en) | Hetero-junction silicon solar cell and fabrication method thereof | |
| CN110265497B (en) | N-type crystalline silicon solar cell with selective emitter and preparation method thereof | |
| CN101937944A (en) | Preparation method of double-sided passivated crystalline silicon solar cell | |
| CN102403369A (en) | Passivation dielectric film for solar cell | |
| CN104064623B (en) | A kind of post-processing approach for lifting solar cell conversion efficiency | |
| CN101916795A (en) | Method for passivating back of crystal silicon solar cell | |
| CN102534547A (en) | Preparation process for gradient antireflection silicon nitride thin film of crystalline silicon solar cell | |
| CN108123046A (en) | A kind of perovskite/n-type crystalline silicon stacked solar cell, cascade solar cell and its manufacturing method | |
| CN106098860A (en) | A kind of production technology of solar battery sheet | |
| CN102751371A (en) | Solar thin film battery and manufacturing method thereof | |
| Kanda et al. | Facile fabrication method of small-sized crystal silicon solar cells for ubiquitous applications and tandem device with perovskite solar cells | |
| CN102157585B (en) | Method for manufacturing uniform shallow emitter solar cell | |
| CN102931278A (en) | Back local contact structure of solar battery, manufacture method of structure, corresponding solar battery and manufacture method of solar battery | |
| CN201402813Y (en) | Thin-film solar cell with high photon-to-electron conversion efficiency | |
| CN102593247A (en) | Method for preparing solar cell mono-crystalline silicon substrate with smooth pyramid structure on surface | |
| CN102157613A (en) | HLF (high square resistance, low surface reflectance, fine metal contact, HLF) crystalline silicon soar cell and preparation method thereof | |
| CN102097527A (en) | Method for preparing N-type solar cells through masked diffusion | |
| CN106328736B (en) | A kind of anti-LID black silicon solars high-efficiency battery and its production method | |
| CN101728459A (en) | Preparation method of crystal silicon solar cell | |
| CN104134706B (en) | Graphene silicon solar cell and manufacturing method thereof | |
| CN103594534B (en) | Aluminum emitter stage back junction back contact crystalline silicon solar cell and manufacture method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170329 Termination date: 20190527 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |