CN201402813Y - Thin-film solar cell with high photon-to-electron conversion efficiency - Google Patents
Thin-film solar cell with high photon-to-electron conversion efficiency Download PDFInfo
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- CN201402813Y CN201402813Y CN 200920142680 CN200920142680U CN201402813Y CN 201402813 Y CN201402813 Y CN 201402813Y CN 200920142680 CN200920142680 CN 200920142680 CN 200920142680 U CN200920142680 U CN 200920142680U CN 201402813 Y CN201402813 Y CN 201402813Y
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- amorphous silicon
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- type amorphous
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- back electrode
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- 239000010409 thin film Substances 0.000 title claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 25
- 239000010408 film Substances 0.000 claims abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000012528 membrane Substances 0.000 claims description 21
- 230000005611 electricity Effects 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 239000012789 electroconductive film Substances 0.000 claims description 13
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 16
- 239000011787 zinc oxide Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000011514 reflex Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a thin-film solar cell with high photon-to-electron conversion efficiency, which comprises a glass substrate, a stannic oxide fluorine-doped transparent conductive film layer, a P-type amorphous silicon thin-film layer, an I-type amorphous silicon thin-film layer, an N-type amorphous silicon thin-film layer and a metal back electrode. A zinc oxide aluminum-doped transparent conductive film layer is arranged between the N-type amorphous silicon thin-film layer and the metal back electrode. A layer of zinc oxide aluminum-mixed (AZO) transparent conductive film is deposited with a method of magnetron sputtering before an Al or Ag back electrode is sputtered. The novel cell structure increases short circuit current by about 5 percent compared with the traditional cell structure.
Description
Technical field
The utility model relates to a kind of thin-film solar cells and preparation method thereof, especially a kind of thin-film solar cells that improves electricity conversion and preparation method thereof.
Background technology
The crystal silicon cell cost is high, impels businessman more and more to pay close attention to the research and development of thin-film solar cells, and how to improve emphasis and the difficult point that its electricity conversion is the PV industry research always for hull cell.
Silica-based solar cell all is by the photovoltaic effect work of p-n junction up to now, depend primarily on the incident solar ray energy from the height of principle battery performance what are absorbed, can photo-generated carrier effectively produce and collect, and concrete is then decided by the quality of material, device architecture and technology.
Improve the electricity conversion of thin-film solar cells, except improving the film quality, a very important aspect is exactly to improve the light utilization efficiency of hull cell.Can consider two kinds of methods at present: first kind is the number of photons that improves to go into to inject battery, reduce the reflection photon of battery surface, the matte design concept of electrode or employing antireflection coatings before normally adopting, above-mentioned mode all can effectively reduce the incident light surface to the reflection of light effect, improved the luminous flux that incident light enters battery, wherein surface-texturing be general also be the most practical measure.
Second method is to improve the structure of device, increases the reflex of back electrode to transmitted light, increases the path that sunlight is propagated at absorbed layer, and usual way is exactly to adopt metal back electrode to strengthen reflex to transmitted light.
The reflex of metal back electrode has reduced to a certain extent because the thin partially institute of hull cell causes the optical transmission loss; But metal electrode directly contacts with Si and can cause metallic atom to be diffused in the Si film, cause the quality of Si film to descend, sometimes reduced the electricity conversion of battery on the contrary, in addition because the extinction coefficient of the material of metal electrode own is bigger, incident light to the long-wavelength region has very strong absorption, cause the photon outside the blue light to can not get effective reflection, make incident photon can not get the application of maximal efficiency.
The utility model content
The purpose of this utility model provides a kind of thin-film solar cells that improves electricity conversion and preparation method thereof.
In order to achieve the above object, technical solution adopted in the utility model is:
A kind of thin-film solar cells of high electricity conversion, include glass substrate, tin oxide is mixed fluorine transparent conductive film layer, P type amorphous silicon membrane layer, I type amorphous silicon membrane layer, N type amorphous silicon membrane layer, metal back electrode, it is characterized in that: between described N type amorphous silicon membrane layer, the metal back electrode doped zinc oxide aluminum transparent electroconductive film layer is arranged.
The thin-film solar cells of described high electricity conversion is characterized in that: the materials of aluminum content of described doped zinc oxide aluminum transparent electroconductive film layer is about 1%～10%; Described metal back electrode is metallic aluminium or silver film.
The thin-film solar cells of described high electricity conversion is characterized in that: described P type, I type, N type amorphous silicon membrane layer gross thickness are about 100～1000nm.
The thin-film solar cells of described high electricity conversion is characterized in that: doped zinc oxide aluminum transparent electroconductive film layer thickness is about 100～1000nm, and metal back electrode thickness is about 50～500nm.
A kind of preparation method of thin-film solar cells of high electricity conversion, described method may further comprise the steps:
(1) mixes at the tin oxide of glass substrate and prepare P type, I type, N type amorphous silicon membrane layer on the fluorine transparent conductive film layer successively;
(2) will deposit the electro-conductive glass of P type, I type, N type amorphous silicon membrane layer, and place and be fixed on the magnetron sputtering stand type support, send into the sputter reactor chamber systems;
(3) utilize the vacuum pump group sputter reactor chamber systems back of the body is evacuated at the end＜10
-5Torr, the feeding reacting gas is opened direct current or intermediate frequency power supply begins build-up of luminance, and depositing zinc oxide is mixed the aluminum transparent electroconductive film layer on N type amorphous silicon membrane layer;
(4) on the doped zinc oxide aluminum transparent electroconductive film layer that deposition is finished, continue sputtering sedimentation layer of metal aluminium or silver film, finish the preparation of battery.
Using plasma strengthens chemical vapor deposition method, the described P type of deposition, I type, N type amorphous silicon membrane layer on Conducting Glass.
As Fig. 2, by doped zinc oxide aluminium (AZO)/compound back reflector of metal back electrode (Metal) to strengthen back electrode to the effect of long-wave band reflection of light.Wherein the compound back reflector of AZO/Metal not only can make the efficiency of light absorption of I type layer strengthen, thereby increases short circuit current, improves the transformation efficiency of battery, and further attenuate I type layer, improves the stability of battery; In addition, doped zinc oxide aluminium can barrier metal back electrode element such as Ag or Al to the diffusion of battery layers, improve battery interface and battery performance.
The design of preceding electrode matte: employed is that tin oxide is mixed fluorine (SnO
2: F) transparent conducting glass; Square resistance is about 10 Ω;
The matrix of the material of doped zinc oxide aluminum transparent electroconductive film layer is zinc oxide, mixes aluminium and is about 1%～10%.
Advantage of the present utility model is:
(1) avoided metal electrode to contact, effectively stopped the poisoning effect of metal electrode N type silicon thin film with the direct of Si film.
(2) improved metal back electrode to Long wavelength region reflection of incident light effect beyond the incident light especially blue light, strengthened the utilance of hull cell, improved the electricity conversion of battery sunlight.
(3) since institute's plated zinc oxide to mix aluminium AZO film thinner, light transmission is good, self can not influence the loss of incident light and the transmission of charge carrier.
(4) compare with traditional technology, the battery short circuit electric current has increased about 5%.Battery efficiency greatly improves than the battery of traditional handicraft.
Description of drawings
Fig. 1 is the structure of conventional films battery.
Fig. 2 is the structure chart of the utility model thin-film solar cells.
Embodiment
A kind of thin-film solar cells of high electricity conversion, include glass substrate 1, transparent conductive film layer 2, P type amorphous silicon membrane layer 3, I type amorphous silicon membrane layer 4, N type amorphous silicon membrane layer 5, metal back electrode 6, between described N type amorphous silicon membrane layer 5, the metal back electrode 6 doped zinc oxide aluminum transparent electroconductive film layer 7 is arranged.
The material of described doped zinc oxide aluminum transparent electroconductive film layer 7 is mixed aluminium and is about about 1-5%; Described metal back electrode 6 is the metallic aluminium rete.
A kind of preparation method of thin-film solar cells of high electricity conversion, described method may further comprise the steps:
(1) mix on the fluorine transparent conductive film layer 2 at the tin oxide on the glass substrate 1, using plasma strengthens chemical vapor deposition method and prepares P type, I type, N type amorphous silicon membrane layer 3,4,5 successively; P type, I type, N type rete gross thickness are about 100～1000nm.
(2) will deposit the electro-conductive glass of P type, I type, N type amorphous silicon membrane layer 3,4,5, and place and be fixed on the magnetron sputtering stand type support, send into the sputter reactor chamber systems;
(3) utilize the vacuum pump group sputter reactor chamber systems back of the body is evacuated at the end＜10
-5Torr, the feeding reacting gas is opened direct current or intermediate frequency power supply begins build-up of luminance, and depositing zinc oxide is mixed aluminum transparent electroconductive film layer 7 on N type amorphous silicon membrane layer 5;
(4) on the doped zinc oxide aluminum transparent electroconductive film layer 7 that deposition is finished, continue sputtering sedimentation layer of metal aluminium or silver film 6, finish the preparation of battery.
Doped zinc oxide aluminum transparent electroconductive film layer 7 thickness are about 100～1000nm, metal back electrode 6 thickness thickness are about 50～500nm.
Claims (4)
1, a kind of thin-film solar cells of high electricity conversion, include glass substrate, tin oxide is mixed fluorine transparent conductive film layer, P type amorphous silicon membrane layer, I type amorphous silicon membrane layer, N type amorphous silicon membrane layer, metal back electrode, it is characterized in that: between described N type amorphous silicon membrane layer, the metal back electrode doped zinc oxide aluminum transparent electroconductive film layer is arranged.
2, the thin-film solar cells of high electricity conversion according to claim 1 is characterized in that: described metal back electrode is metallic aluminium or silver film.
3, the thin-film solar cells of high electricity conversion according to claim 1 is characterized in that: described P type, I type, N type amorphous silicon membrane layer gross thickness are about 100～1000nm.
4, the thin-film solar cells of high electricity conversion according to claim 1 is characterized in that: doped zinc oxide aluminum transparent electroconductive film layer thickness is about 100～1000nm, and metal back electrode thickness is about 50～500nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920142680 CN201402813Y (en) | 2009-01-12 | 2009-01-12 | Thin-film solar cell with high photon-to-electron conversion efficiency |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920142680 CN201402813Y (en) | 2009-01-12 | 2009-01-12 | Thin-film solar cell with high photon-to-electron conversion efficiency |
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| CN201402813Y true CN201402813Y (en) | 2010-02-10 |
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| CN 200920142680 Expired - Fee Related CN201402813Y (en) | 2009-01-12 | 2009-01-12 | Thin-film solar cell with high photon-to-electron conversion efficiency |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101877372A (en) * | 2010-05-20 | 2010-11-03 | 深圳市创益科技发展有限公司 | Back electrode film of thin film solar cell |
| CN102298986A (en) * | 2010-06-28 | 2011-12-28 | 住友金属矿山株式会社 | Transparent electrically conductive substrate, a manufacturing method therefor, a thin-film solar cell and a manufacturing method therefor |
| CN102437225A (en) * | 2011-11-30 | 2012-05-02 | 中山大学 | Silicon thin film heterojunction solar cell and manufacturing method thereof |
| CN102456762A (en) * | 2010-10-27 | 2012-05-16 | 信义光伏产业(安徽)控股有限公司 | Crystalline silicon solar cell and amorphous silicon solar cell |
| CN102503162A (en) * | 2011-11-01 | 2012-06-20 | 昆明理工大学 | Preparation method for Ag-Al co-doped p type ZnO film |
| CN103151394A (en) * | 2012-12-14 | 2013-06-12 | 广东志成冠军集团有限公司 | Thin-film solar cell and manufacture method thereof |
| CN103556935A (en) * | 2013-11-15 | 2014-02-05 | 沈阳远大科技创业园有限公司 | Sun-shading louver with solar cell blades |
-
2009
- 2009-01-12 CN CN 200920142680 patent/CN201402813Y/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101877372A (en) * | 2010-05-20 | 2010-11-03 | 深圳市创益科技发展有限公司 | Back electrode film of thin film solar cell |
| CN101877372B (en) * | 2010-05-20 | 2012-07-25 | 深圳市创益科技发展有限公司 | Back electrode film of thin film solar cell |
| CN102298986A (en) * | 2010-06-28 | 2011-12-28 | 住友金属矿山株式会社 | Transparent electrically conductive substrate, a manufacturing method therefor, a thin-film solar cell and a manufacturing method therefor |
| CN102298986B (en) * | 2010-06-28 | 2016-08-03 | 住友金属矿山株式会社 | Transparent conductive substrate and manufacture method, thin-film solar cells and manufacture method |
| CN102456762A (en) * | 2010-10-27 | 2012-05-16 | 信义光伏产业(安徽)控股有限公司 | Crystalline silicon solar cell and amorphous silicon solar cell |
| CN102456762B (en) * | 2010-10-27 | 2015-07-15 | 信义光伏产业(安徽)控股有限公司 | Crystalline silicon solar battery and amorphous silicon solar battery |
| CN102503162A (en) * | 2011-11-01 | 2012-06-20 | 昆明理工大学 | Preparation method for Ag-Al co-doped p type ZnO film |
| CN102437225A (en) * | 2011-11-30 | 2012-05-02 | 中山大学 | Silicon thin film heterojunction solar cell and manufacturing method thereof |
| CN103151394A (en) * | 2012-12-14 | 2013-06-12 | 广东志成冠军集团有限公司 | Thin-film solar cell and manufacture method thereof |
| CN103556935A (en) * | 2013-11-15 | 2014-02-05 | 沈阳远大科技创业园有限公司 | Sun-shading louver with solar cell blades |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100210 Termination date: 20120112 |