CN101447518A - Ant-apex contact heterojunction solar battery and preparation method thereof - Google Patents
Ant-apex contact heterojunction solar battery and preparation method thereof Download PDFInfo
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- CN101447518A CN101447518A CNA2008102468010A CN200810246801A CN101447518A CN 101447518 A CN101447518 A CN 101447518A CN A2008102468010 A CNA2008102468010 A CN A2008102468010A CN 200810246801 A CN200810246801 A CN 200810246801A CN 101447518 A CN101447518 A CN 101447518A
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Abstract
The invention relates to an ant-apex contact heterojunction solar battery and a preparation method thereof. The ant-apex contact heterojunction solar battery is characterized in that a plurality of units are included; each unit adopts a P-type or N-type single crystal silicon as a silicon substrate which is used as a base region of the battery; a passivation layer and an aluminium layer are sequentially prepared on the back surface of the silicon substrate from inside to outside, and a point contact base electrode is formed on the surface of the aluminium layer; an amorphous layer used as an emitter region of the battery is deposited on the right surface of the silicon substrate; a transparent conductive film and an emitter region electrode arranged on the transparent conductive film are arranged on the surface of the amorphous layer; and when in use, the base electrode and the emitter region electrode of each unit are respectively connected with an anode and a cathode of electrical equipment through leads. In the ant-apex contact heterojunction solar battery and the preparation method thereof, because the point contact base electrode which is realized through the laser heating technique is adopted on the back surface of the silicon substrate, the effect for passivating and reducing ohmic contact of the electrode can be achieved, the complex process of high sintering in a conventional battery is avoided, the demand to the environment cleanliness is low, the demand to the substrate is thus not high, and a conventional single crystal wafer sold in the market can be adopted.
Description
Technical field
The present invention relates to a kind of solar cell and manufacture method thereof, particularly about a kind of ant-apex contact heterojunction solar battery and manufacture method thereof.
Background technology
The antapex contact solar cell all designs the metal electrode and the emitter region of battery on the back of the body surface of battery, has avoided the influence of emitter region auger recombination to battery efficiency effectively.The dielectric layer on battery back of the body surface or metal level can strengthen light absorption effectively with arriving in the light reflected back cell body at the back side simultaneously.The electrode of battery all is arranged on back of the body surface, has simplified the interconnection between battery greatly, the preparation process of simplified assembly.But compare with conventional solar cell, the outstanding shortcoming of antapex contact solar cell is that complex process and cost are higher to the having relatively high expectations of material and production environment.
Heterojunction solar battery is a kind of mixed type solar battery that utilizes crystalline silicon substrates and amorphous silicon membrane to support, and the energy output that calculates by unit are is keeping world lead level.It is an emitter with noncrystal membrane silicon, and crystalline silicon is an absorbed layer, therefore has the stable and thin-film silicon cell advantages of being cheap of crystal silicon cell concurrently, and has the high efficiency that is equal to crystal silicon cell.The manufacture process of heterojunction solar battery adopts the low temperature preparation process of no High temperature diffusion, and thin crystal silicon chip and the silicon membrane layer of material employing, therefore has the advantages that energy consumption is little He the cost of material is low, and manufacturing process is simple relatively.
At present still there is not a technology can have the advantage of two kinds of above solar cells concurrently.
Summary of the invention
At the problems referred to above, the purpose of this invention is to provide a kind of ant-apex contact heterojunction solar battery and manufacture method thereof that has antapex contact solar cell and heterojunction solar battery advantage concurrently.
For achieving the above object, the present invention takes following technical scheme: a kind of ant-apex contact heterojunction solar battery, it is characterized in that: it comprises the unit that links together that a plurality of structures are identical, and each described unit adopts P type or n type single crystal silicon sheet as the base of silicon substrate as solar cell; The back of the body surface of described silicon substrate prepares passivation layer and aluminium lamination from the inside to the outside successively, uses laser heating technique to form some contact base electrode on described aluminium lamination surface; The front surface of described silicon substrate deposits the emitter region of amorphous layer as solar cell; Described amorphous surface has transparent conductive film and goes up the emitter region electrode that is provided with; The positive pole and the negative pole that during use the described base electrode of each unit and described emitter region electrode are connected power consumption equipment respectively by lead.
Described passivation layer attach most importance to one of doped amorphous silicon, microcrystal silicon or silicon dioxide.
Described amorphous layer constitutes by intrinsic a-Si:H layer with opposite polarity N type of described silicon substrate or P type a-Si:H layer.
Described emitter region electrode is a silver electrode.
A kind of manufacture method of ant-apex contact heterojunction solar battery, its step comprises: 1) with the front surface tabulation plane textureization of alkaline corrosion method at P type or N type silicon substrate, and described front surface is carried out routine clean; 2) at the back of the body surface preparation passivation layer of described silicon substrate; 3) method with magnetron sputtering or AM aluminum metallization is provided with aluminium lamination on described passivation layer, and adopts laser heating technique to make a formation point contact base electrode on the described aluminium lamination; After laser treatment finishes, remove residual doped source with the method for solvent clean, and dry; 4) on described silicon substrate front surface, deposit described amorphous layer with the PECVD method; 5) being lower than on the described amorphous layer under 200 ℃ the temperature, deposit described transparent conductive film with sputtering technology; 6) on described conductive film, make the emitter region electrode with deposition process; 7), carry out sintering 400 ℃ of following temperature with the cell integrated tube furnace of putting into.
Wavelength of Laser in the described step 3) is 380～1200nm, 800～1400 ℃ of heating-up temperatures.
The present invention is owing to take above technical scheme, it has the following advantages: 1, front surface of the present invention is a heterojunction structure, back of the body surface is antapex contact battery structure, thereby combine effectively that the heterojunction battery process is simple, sintering temperature is low and characteristics cheaply, and the characteristics that antapex contact battery passivation ability is strong, photoelectric conversion efficiency is high.2, the present invention plays the effect of passivation silicon substrate front surface and Window layer owing at the silicon substrate front surface amorphous silicon layer is set, and the shortwave that improves battery absorbs, and improves the photoelectric conversion efficiency of battery greatly, and is easy to realize on technology.3, the back of the body of silicon substrate of the present invention surface is because the some contact base electrode that adopts laser heating technique to realize, not only play the effect of passivation and reduction electrode ohmic contact, and avoided the high temperature sintering complicated technology in the conventional batteries, to environment cleanliness require low, therefore less demanding to substrate can adopt commercially available conventional single-chip.4, the back of the body of the present invention surface is owing to be coated with the mirror metal aluminium lamination, and the light that back of the body surface is not absorbed by battery can also not reflected in the place of contact base electrode, improves the long wave absorption of battery.5, the present invention is except that doped region, the other parts temperature of silicon chip is low, and the quality of effectively having avoided silicon substrate possible contamination or other factors in pyroprocess to cause descends.The present invention can be widely used in the clean energy resource of producing high efficiency, low cost, to adapt to the growth requirement of society.
Description of drawings
Fig. 1 is the structural representation of adjacent two unit of the present invention
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
As shown in Figure 1, be the structural representation of adjacent two unit in the ant-apex contact heterojunction solar battery of the present invention, a solar cell is made up of many such unit.Each unit is arranged on the silicon substrate 1, obtains a complete solar panel after afterwards a plurality of unit being connected.
Silicon substrate 1 of the present invention is that thickness is 200～500 μ m, and resistivity is P type or the n type single crystal silicon sheet of 0.3～500 Ω cm, and silicon substrate 1 is as the base of solar cell.On the back of the body surface of silicon substrate 1 preparation thickness be the heavily doped amorphous silicon of 50～80nm or one of microcrystal silicon or silicon dioxide constitute passivation layer 2, to reduce charge carrier compound on silicon substrate 1 back of the body surface.Passivation layer 2 is provided with minute surface aluminium lamination 3, forms some contact base electrode 4 on aluminium lamination 3 surfaces.It more than is the architectural feature of antapex contact solar battery.
After the front surface of P type or N type silicon substrate 1 carries out the texturing processing, deposit amorphous layer 5 thereon, as the emitter region of battery.Amorphous layer 5 is composite beds that are made of two layers of material, and its lower floor is that thickness is the intrinsic a-Si:H layer of 10～15nm, the upper strata for silicon substrate 1 opposite polarity thickness be N type or the P type a-Si:H layer of 5～10nm.At amorphous layer 5 surface deposition transparent oxide conductive films (TCO) 6, silver (Ag) electrode is set on film afterwards as emitter region electrode 7.The positive and negative electrode that during use base electrode 4 and emitter region electrode 7 is connected power consumption equipment respectively by lead.It more than is the architectural feature of heterojunction solar battery.
In the foregoing description, back of the body surface amorphous, crystallite or the silicon dioxide passivation layer 2 of silicon substrate 1, reduced charge carrier and carried on the back the compound of surface at silicon substrate 1, so not only can reduce the ohmic contact of battery, the aluminium lamination 3 of contact base electrode 4 can also not reflect the light that is not absorbed by battery simultaneously, the long wave that increases battery absorbs, to improve the photoelectric conversion efficiency of battery.Base electrode 4 adopts laser heating technique to realize that Wavelength of Laser is 380～1200nm, and heating-up temperature is 800～1400 ℃, utilizes the metallic aluminium revulsive crystallization to form point contact electrode.Because the aluminium in the aluminium lamination 3 can make passivation layer 2 crystallization at a lower temperature, therefore avoided the high temperature sintering complicated technology in the conventional batteries.Except that the doped region of base electrode 4, the other parts of silicon chip are in relative low temperature, and the quality of so just having avoided silicon substrate 1 possible contamination or other factors in heating process to cause descends, and therefore the cleannes to environment require also high.
In the foregoing description, the amorphous silicon of amorphous layer 5 has unusual superior passivation ability to the front surface of silicon substrate 1, plays Window layer simultaneously, and the shortwave that improves battery absorbs, can improve the photoelectric conversion efficiency efficient of battery greatly, and on technology, be easy to realize.After the base electrode 4 of entire cell and emitter region electrode 7 complete, put it into and carry out sintering in the tube furnace.So just reduced the series resistance between silicon substrate 1 and base electrode 4 and the emitter region electrode 7, formed ohmic contact better, increased by electric current to improve conversion efficiency.
Embodiment below by to ant-apex contact heterojunction solar battery manufacture method of the present invention further sets forth the present invention.
1) adopting thickness is 200 μ m, and resistivity is that the p type single crystal silicon of 3 Ω cm is as silicon substrate 1; , and front surface is carried out routine clean in silicon substrate 1 front surface tabulation plane textureization with the alkaline corrosion method.
2) passivation layer 2 that preparation heavily doped amorphous silicon or one of microcrystal silicon or silicon dioxide constitute on the back of the body surface of P type silicon substrate 1, thickness is 65nm.
3) method with magnetron sputtering or AM aluminum metallization is made aluminium lamination 3 on passivation layer 2, and thickness is 1～2 μ m, adopts laser heating technique to make and forms some contact base electrode 4 on the aluminium lamination 3, and Wavelength of Laser is 380～1200nm, 800～1400 ℃ of heating-up temperatures.After laser treatment finishes, remove residual doped source with the method for solvent clean, and dry, and solvent can be ionized water.
4) amorphous layer 5 of usefulness PECVD method deposition intrinsic a-Si:H layer and N type a-Si:H on P type silicon substrate 1 front surface.
5) be lower than on the amorphous layer 5 under 200 ℃ the low temperature, with sputtering technology deposit transparent oxide electroconductive film 6, thickness is 70nm.
6) with method and other conventional deposition process of silk screen printing, on conductive film 6, make silver electrode as emitter region electrode 7.
7), carry out sintering 400 ℃ of following temperature, thereby finish the manufacturing of ant-apex contact heterojunction solar battery with the cell integrated tube furnace of putting into.
Among the embodiment of the inventive method, silicon substrate 1 can adopt the P type also can adopt N type silicon chip, and its thickness changes between 200～500 μ m.The thickness of passivation layer 2 can change between 50～80nm, and its formation method can adopt the various deposition processs of prior art.The thickness of amorphous layer 5 can change between 5～10nm, and its generation type also can adopt various deposition process of the prior art.Aluminium lamination 3 can select for use other to have the metal or alloy material of mirror effect, and its thickness and generation type can adopt the variety of way of prior art.Emitter region electrode 7 can adopt silk screen printing, vacuum evaporation or sputtering method and other conventional deposition process to form.The variation of above-mentioned various materials and the variation of manufacture method should not got rid of outside protection scope of the present invention.
Claims (7)
1, a kind of ant-apex contact heterojunction solar battery is characterized in that: it comprises the unit that links together that a plurality of structures are identical, and each described unit adopts P type or n type single crystal silicon sheet as the base of silicon substrate as solar cell; The back of the body surface of described silicon substrate prepares passivation layer and aluminium lamination from the inside to the outside successively, uses laser heating technique to form some contact base electrode on described aluminium lamination surface; The front surface of described silicon substrate deposits the emitter region of amorphous layer as solar cell; Described amorphous surface has transparent conductive film and goes up the emitter region electrode that is provided with; The positive pole and the negative pole that during use the described base electrode of each unit and described emitter region electrode are connected power consumption equipment respectively by lead.
2, a kind of ant-apex contact heterojunction solar battery as claimed in claim 1 is characterized in that: described passivation layer attach most importance to one of doped amorphous silicon, microcrystal silicon or silicon dioxide.
3, a kind of ant-apex contact heterojunction solar battery as claimed in claim 1 is characterized in that: described amorphous layer constitutes by intrinsic a-Si:H layer with opposite polarity N type of described silicon substrate or P type a-Si:H layer.
4, a kind of ant-apex contact heterojunction solar battery as claimed in claim 2 is characterized in that: described amorphous layer constitutes by intrinsic a-Si:H layer with opposite polarity N type of described silicon substrate or P type a-Si:H layer.
5, as claim 1 or 2 or 3 or 4 described a kind of ant-apex contact heterojunction solar batteries, it is characterized in that: described emitter region electrode is a silver electrode.
6, as the manufacture method of the described a kind of ant-apex contact heterojunction solar battery of claim 1～5, its step comprises:
1), and described front surface is carried out routine clean with the front surface tabulation plane textureization of alkaline corrosion method at P type or N type silicon substrate;
2) at the back of the body surface preparation passivation layer of described silicon substrate;
3) method with magnetron sputtering or AM aluminum metallization is provided with aluminium lamination on described passivation layer, and adopts laser heating technique to make a formation point contact base electrode on the described aluminium lamination; After laser treatment finishes, remove residual doped source with the method for solvent clean, and dry;
4) on described silicon substrate front surface, deposit described amorphous layer with the PECVD method;
5) being lower than on the described amorphous layer under 200 ℃ the temperature, deposit described transparent conductive film with sputtering technology;
6) on described conductive film, make the emitter region electrode with deposition process;
7), carry out sintering 400 ℃ of following temperature with the cell integrated tube furnace of putting into.
7, the manufacture method of a kind of ant-apex contact heterojunction solar battery as claimed in claim 6 is characterized in that: the Wavelength of Laser in the described step 3) is 380～1200nm, 800～1400 ℃ of heating-up temperatures.
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| CN101937945A (en) * | 2010-09-09 | 2011-01-05 | 浙江百力达太阳能有限公司 | Preparation method of solar cell |
| CN102148288A (en) * | 2011-01-27 | 2011-08-10 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Process for preparing backside passivation layer of monocrystal silicon solar battery plate by laser rapid heating method |
| CN102364692A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Double side light receiving crystalline silicon solar cell with fully-passivated structure and manufacturing method thereof |
| CN102368507A (en) * | 2011-11-02 | 2012-03-07 | 北京汇天能光电技术有限公司 | Heterojunction solar battery with point-contact back surface field and production method thereof |
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| CN108346707A (en) * | 2018-03-12 | 2018-07-31 | 南昌大学 | A kind of hetero-junctions crystal silicon double-side solar cell structure that entering light region is blocked without heavily doped layer |
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| CN107134498B (en) * | 2009-12-01 | 2019-06-28 | 太阳能公司 | It is formed using the contact of the solar battery of laser ablation |
| CN102763226B (en) * | 2009-12-09 | 2016-01-27 | 速力斯公司 | Use high-efficiency photovoltaic back of the body contact solar cell structure and the manufacture method of thin plate semiconductor |
| CN102763226A (en) * | 2009-12-09 | 2012-10-31 | 速力斯公司 | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductors |
| CN101937945A (en) * | 2010-09-09 | 2011-01-05 | 浙江百力达太阳能有限公司 | Preparation method of solar cell |
| CN102148288A (en) * | 2011-01-27 | 2011-08-10 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Process for preparing backside passivation layer of monocrystal silicon solar battery plate by laser rapid heating method |
| CN102364692A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Double side light receiving crystalline silicon solar cell with fully-passivated structure and manufacturing method thereof |
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