CN114914321A - N-type cell for photovoltaic panel - Google Patents
N-type cell for photovoltaic panel Download PDFInfo
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- CN114914321A CN114914321A CN202210659995.7A CN202210659995A CN114914321A CN 114914321 A CN114914321 A CN 114914321A CN 202210659995 A CN202210659995 A CN 202210659995A CN 114914321 A CN114914321 A CN 114914321A
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- 230000017525 heat dissipation Effects 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- 238000009434 installation Methods 0.000 claims description 34
- 238000009423 ventilation Methods 0.000 claims description 30
- 230000003139 buffering effect Effects 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 12
- 230000000712 assembly Effects 0.000 claims description 11
- 238000000429 assembly Methods 0.000 claims description 11
- 238000005057 refrigeration Methods 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 4
- 208000035874 Excoriation Diseases 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 silicon amide Chemical class 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
- H01L31/0521—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells using a gaseous or a liquid coolant, e.g. air flow ventilation, water circulation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses an N-type cell for a photovoltaic panel, which comprises a substrate, wherein an N emitting electrode is arranged above the substrate, an ammoniated silicon antireflection film is fixedly bonded on the top of the N emitting electrode, the top of the N emitting electrode is electrically connected with a plurality of positive electrodes, a back passivation layer is arranged below the substrate, a plurality of aluminum grid lines are embedded in the bottom of the back passivation layer, and a heat dissipation mechanism is fixedly connected between the bottom of the N emitting electrode and the top of the substrate, wherein the heat dissipation mechanism can dissipate heat generated by the N emitting electrode and the substrate and reduce the temperature. The N-type battery piece heat dissipation structure is convenient for rapid heat dissipation of the N emitting electrode and the substrate, can effectively reduce the damage risk caused by the fact that the N-type battery piece is at high temperature for a long time, can buffer and unload external collision impact force, reduces the risk of damage to the N-type battery piece caused by large collision force, and meets the use requirement.
Description
Technical Field
The invention relates to the technical field of N-type cells, in particular to an N-type cell for a photovoltaic panel.
Background
The photovoltaic module is a device for converting solar energy into electric energy by utilizing a photovoltaic effect, and a double-sided module in the current market mainly comprises a battery piece, photovoltaic glass, a packaging material, a photovoltaic welding strip, a junction box and a frame, wherein the battery piece can be divided into a P-type silicon chip and an N-type silicon chip due to different doping elements, and the P-type silicon chip is subjected to phosphorus diffusion to obtain the P-type battery piece with an N/P-type structure; injecting boron into the N-type silicon wafer to obtain an N-type cell with a P/N-type structure, wherein when the cell is illuminated, the front side of the P-type cell is a negative electrode, and the back side of the P-type cell is a positive electrode; the front surface of the N-type cell is a positive electrode, and the back surface of the N-type cell is a negative electrode, so that the N-type cell is concerned with the advantages of low attenuation, high efficiency and the like;
present photovoltaic is N type battery piece for electroplax, it can produce a large amount of heats in the use, its radiating effect of current N type battery piece is unsatisfactory, if the heat can not in time effluvium, then cause N type battery piece long time to be in high temperature, and then cause its risk of damaging easily, and most lack the function of buffering power of unloading at the in-process that uses, in-process using, the risk that has higher damage because of outside impact is great causes N type battery piece, can not satisfy the user demand, therefore we have proposed a photovoltaic N type battery piece for electroplax and have been used for solving above-mentioned problem.
Disclosure of Invention
Based on the technical problems in the background art, the invention provides an N-type cell for a photovoltaic panel.
The invention provides an N-type cell for a photovoltaic panel, which comprises a substrate, wherein an N emitting electrode is arranged above the substrate, an ammoniated silicon anti-reflection film is fixedly bonded on the top of the N emitting electrode, the top of the N emitting electrode is electrically connected with a plurality of positive electrodes, a back passivation layer is arranged below the substrate, a plurality of aluminum grid lines are embedded in the bottom of the back passivation layer, a heat dissipation mechanism is fixedly connected between the bottom of the N emitting electrode and the top of the substrate, the heat dissipation mechanism can dissipate and cool heat generated by the N emitting electrode and the substrate, so that the heat can be dissipated quickly, the damage risk caused by the fact that the N-type cell is in high temperature for a long time can be effectively reduced, a buffering and force-unloading mechanism is fixedly connected between the bottom of the substrate and the top of the back passivation layer, and the buffering and force-unloading mechanism can buffer and unload external collision impact force, the risk of damage to the N-type cell piece caused by large collision force is reduced.
Preferably, the heat dissipation mechanism comprises a heat conduction layer which is fixedly bonded at the bottom of the N emitting electrode, a ventilation cavity is formed in the heat conduction layer, a plurality of refrigerating sheets are fixedly embedded on the inner wall of the top of the ventilation cavity in an embedding manner and used for cooling heat, the tops of the refrigerating sheets are movably contacted with the bottom of the N emitting electrode, a plurality of first through holes are formed in the inner wall of the bottom of the ventilation cavity, a heat dissipation layer is fixedly bonded between the bottom of the heat conduction layer and the top of the base plate, a first vent hole is formed in the left side of the heat dissipation layer, two sides of the first vent hole are both arranged to be bowl-shaped structures, a plurality of second vent holes are formed in the inner wall of the top of the first vent hole, the first through holes are communicated with the corresponding second vent holes, the first through holes and the corresponding second through holes are both located below the refrigerating sheets, and a plurality of heat dissipation fins which are obliquely arranged are fixedly connected on the inner walls of two sides of the first through holes and the second through holes, the setting of radiating fin can dispel the heat to the heat that produces and cool down, control two relative radiating fin symmetries and set up, a plurality of second ventholes have been seted up on the bottom inner wall in ventilation chamber, the air channel has all been seted up to the top both sides on heat dissipation layer, one side that two air channels kept away from each other all is established to the opening, it is equipped with a plurality of radiating blocks to inlay on the bottom inner wall of first air channel, the bottom of radiating block and the top movable contact of base plate, the radiating block is used for cooling down the heat that the base plate produced and handles.
Preferably, the buffering and force-unloading mechanism comprises a first installation thin plate which is fixedly bonded to the bottom of the substrate, a second installation thin plate is fixedly bonded to the top of the back passivation layer, a clip-shaped elastic sleeve is fixedly connected between the bottom of the first installation thin plate and the top of the second installation thin plate, the bottom of the first installation thin plate is fixedly connected with four positioning rods in a rectangular manner, the second installation thin plate is slidably sleeved on the four positioning rods, a plurality of groups of elastic buffering assemblies are fixedly connected between the first installation thin plate and the second installation thin plate, the elastic buffering assemblies can buffer external impact force and unload force, and the plurality of groups of elastic buffering assemblies are all positioned in the clip-shaped elastic sleeve.
Preferably, the elastic buffering component comprises two elastic rubber blocks, the top and the bottom of each elastic rubber block are respectively fixedly connected with one side, close to each other, of the first installation thin plate and the second installation thin plate, the two elastic rubber blocks on the same group of elastic buffering component are respectively fixedly connected with elastic strips, the two elastic strips on the same group of elastic buffering component are respectively fixedly connected with one side, close to each other, of the two elastic strips, and the top and the bottom of each elastic ball are respectively fixedly connected with one side, close to each other, of the first installation thin plate and the second installation thin plate.
Preferably, the top of the silicon nitride antireflection film is fixedly bonded with an anti-abrasion layer, and the risk of abrasion of the N-type cell can be effectively reduced due to the arrangement of the anti-abrasion layer.
Preferably, a plurality of first embedding holes are formed in the inner wall of the top of the ventilation cavity, and the inner wall of each first embedding hole is fixedly connected with the outer side of the corresponding refrigeration sheet.
Preferably, a plurality of second embedded holes are formed in the inner wall of the bottom of the first vent hole, and the inner walls of the second embedded holes are fixedly connected with the outer sides of the corresponding radiating blocks.
Preferably, the vent grooves communicate with a corresponding plurality of second vent holes.
Preferably, the top of the second installation thin plate is rectangular and provided with a plurality of positioning grooves, and the inner walls of the positioning grooves are in sliding connection with the outer sides of the corresponding positioning rods.
Preferably, a plurality of first heat dissipation holes are formed in the inner wall of the bottom of the ventilation cavity, a plurality of second heat dissipation holes are formed in the inner wall of the top of the first ventilation hole, and the first heat dissipation holes are communicated with the corresponding second heat dissipation holes.
Compared with the prior art, the invention has the beneficial effects that:
1. through the arrangement of the heat dissipation mechanism, heat generated by the N emitting electrode and the substrate can be dissipated and cooled, so that the heat can be dissipated quickly, and the damage risk caused by the fact that the N-type battery piece is at a high temperature for a long time can be effectively reduced;
2. through the arrangement of the buffering and force-unloading mechanism, the external collision impact force can be buffered and unloaded, and the risk of damage to the N-type battery piece caused by large collision force is reduced;
the N-type battery piece heat dissipation structure is convenient for rapid heat dissipation of the N emitting electrode and the substrate, can effectively reduce the damage risk caused by the fact that the N-type battery piece is at high temperature for a long time, can buffer and unload external collision impact force, reduces the risk of damage to the N-type battery piece caused by large collision force, and meets the use requirement.
Drawings
FIG. 1 is a schematic structural diagram of an N-type cell for a photovoltaic panel according to the present invention;
FIG. 2 is a schematic cross-sectional view of the structure of FIG. 1;
FIG. 3 is an enlarged schematic view of portion A of FIG. 2;
FIG. 4 is a schematic perspective view of an elastic rubber block, an elastic strip and an elastic ball connecting piece of an N-type cell for a photovoltaic panel according to the present invention;
fig. 5 is a schematic top view of a second mounting sheet for an N-type cell of a photovoltaic panel according to the present invention.
In the figure: 100. a substrate; 101. silicon amide antireflection films; 102. a positive electrode; 103. a back passivation layer; 104. an aluminum grid line; 105. an N emitter; 1. an anti-wear layer; 2. a refrigeration plate; 3. a heat conductive layer; 4. a vent lumen; 5. a heat dissipation layer; 6. a first through hole; 7. a second through hole; 8. a heat dissipating fin; 9. a second vent hole; 10. a vent channel; 11. a first vent hole; 12. a heat dissipating block; 13. a first mounting sheet; 14. a second mounting sheet; 15. a clip-shaped elastic sleeve; 16. positioning a rod; 17. an elastic rubber block; 18. an elastic strip; 19. an elastic ball; 20. a first heat dissipation hole; 21. a second heat dissipation hole.
Detailed Description
The present invention will be further illustrated with reference to the following specific examples.
Examples
Referring to fig. 1-5, the present embodiment provides an N-type cell for a photovoltaic panel, which includes a substrate 100, an N-emitter 105 disposed above the substrate 100, an ammoniated silicon anti-reflection film 101 adhered and fixed on the top of the N-emitter 105, an anti-wear layer 1 adhered and fixed on the top of the ammoniated silicon anti-reflection film 101, and a heat dissipation mechanism disposed between the bottom of the N-emitter 105 and the top of the substrate 100, wherein the top of the N-emitter 105 is electrically connected with a plurality of positive electrodes 102, a back passivation layer 103 is disposed below the substrate 100, a plurality of aluminum grid lines 104 are embedded on the bottom of the back passivation layer 103, the heat dissipation mechanism includes a heat conduction layer 3 adhered and fixed on the bottom of the N-emitter 105, the heat conduction layer 3 is used for conducting heat generated during the operation of the N-emitter 105, a ventilation cavity 4 is disposed on the heat conduction layer 3, a plurality of cooling fins 2 are embedded and fixed on the inner wall of the top of the ventilation cavity 4, wherein the inner wall of the top of the ventilation cavity 4 is provided with a plurality of first embedding holes, the inner wall of each first embedding hole is fixedly connected with the outer side of the corresponding refrigeration sheet 2, the first embedding holes are used for installing the refrigeration sheets 2, the refrigeration sheets 2 are arranged and used for cooling heat, the top of each refrigeration sheet 2 is movably contacted with the bottom of the N emitting electrode 105, the inner wall of the bottom of the ventilation cavity 4 is provided with a plurality of first through holes 6, a heat dissipation layer 5 is fixedly bonded between the bottom of the heat conduction layer 3 and the top of the base plate 100, the heat dissipation layer 5 is used for accelerating the heat dissipation, the left side of the heat dissipation layer 5 is provided with a first vent hole 11, the inner wall of the bottom of the ventilation cavity 4 is provided with a plurality of first heat dissipation holes 20, the inner wall of the top of the first vent hole 11 is provided with a plurality of second heat dissipation holes 21, the first heat dissipation holes 20 are communicated with the corresponding second heat dissipation holes 21, and the first heat dissipation holes 20 are matched with the corresponding second heat dissipation holes 21, the heat dissipation and ventilation effect is achieved, the two sides of the first vent hole 11 are both arranged to be bowl-shaped structures, the bowl-shaped structures are arranged to increase the inner diameter of the first vent hole 11, so that the heat dissipation effect is further improved, the inner walls of the top of the first vent hole 11 are provided with a plurality of second vent holes 7, the first vent hole 6 is communicated with the corresponding second vent hole 7, the first vent hole 6 and the corresponding second vent hole 7 are both positioned below the refrigeration sheet 2, the inner walls of the two sides of the first vent hole 6 and the inner walls of the two sides of the second vent hole 7 are both fixedly connected with a plurality of obliquely arranged heat dissipation fins 8, the two heat dissipation fins 8 which are opposite from left to right are symmetrically arranged, the inner wall of the bottom of the ventilation cavity 4 is provided with a plurality of second vent holes 9, the two sides of the top of the heat dissipation layer 5 are both provided with ventilation grooves 10, one side of the two ventilation grooves 10 which are far away from each other is arranged to be an opening, wherein the ventilation grooves 10 are communicated with the corresponding second vent holes 9, the vent grooves 10 are matched with the corresponding second vent holes 9 to realize ventilation and heat dissipation, a plurality of heat dissipation blocks 12 are embedded on the inner wall of the bottom of the first vent hole 11, a plurality of second embedded holes are formed in the inner wall of the bottom of the first vent hole 11, the inner wall of each second embedded hole is fixedly connected with the outer side of the corresponding heat dissipation block 12, the second embedded holes are used for installing the heat dissipation blocks 12, the bottoms of the heat dissipation blocks 12 are in movable contact with the top of the substrate 100, and the heat dissipation blocks 12 are used for performing heat dissipation treatment on heat generated by the substrate 100;
a buffering and force-unloading mechanism is fixedly connected between the bottom of the substrate 100 and the top of the back passivation layer 103, wherein the buffering and force-unloading mechanism comprises a first installation thin plate 13 which is fixedly bonded at the bottom of the substrate 100, a second installation thin plate 14 is fixedly bonded at the top of the back passivation layer 103, a clip-shaped elastic sleeve 15 is fixedly connected between the bottom of the first installation thin plate 13 and the top of the second installation thin plate 14, four positioning rods 16 are fixedly connected at the bottom of the first installation thin plate 13 in a rectangular shape, the second installation thin plate 14 is slidably sleeved on the four positioning rods 16, a plurality of positioning grooves are formed at the top of the second installation thin plate 14 in a rectangular shape, the inner walls of the positioning grooves are slidably connected with the outer sides of the corresponding positioning rods 16, the positioning rods 16 and the positioning grooves are matched to play a role in guiding the first installation thin plate 13, and a plurality of elastic buffering assemblies are fixedly connected between the first installation thin plate 13 and the second installation thin plate 14, the multiple groups of elastic buffer assemblies are all positioned in the clip-shaped elastic sleeve 15, wherein the clip-shaped elastic sleeve 15 is used for shielding the multiple elastic buffer assemblies and the four positioning rods 16;
wherein the elastic buffer component comprises two elastic rubber blocks 17, the top and the bottom of the elastic rubber blocks 17 are respectively and fixedly connected with one side of the first installation thin plate 13 and one side of the second installation thin plate 14 which are close to each other, the side of the two elastic rubber blocks 17 which are positioned on the same group of elastic buffer components are respectively and fixedly connected with an elastic strip 18, the side of the two elastic strips 18 which are positioned on the same group of elastic buffer components are respectively and fixedly connected with an elastic ball 19, and the top and the bottom of the elastic ball 19 are respectively and fixedly connected with one side of the first installation thin plate 13 and one side of the second installation thin plate 14 which are close to each other, wherein under the elastic action of the clip elastic sleeve 15, the elastic rubber blocks 17, the elastic balls 19 and the elastic strips 18, the external impact force can be buffered and removed, the invention is convenient for quickly dissipating heat of the N-type emitter 105 and the substrate 100, and can effectively reduce the risk of damage of the N-type battery plate caused by high temperature for a long time, and can cushion the power of unloading to outside collision impact force, reduce because of the great risk that causes N type battery piece to damage of collision power, satisfy the user demand.
In this embodiment, when in use, when heat is generated during the operation of the N-emitting electrode 105, the generated heat is transferred to the plurality of cooling fins 2, the cooling fins 2 cool the generated heat, and at the same time, part of the heat is transferred to the ventilation cavity 4 in the heat conduction layer 3, part of the heat in the ventilation cavity 4 enters the first through hole 6 and the second through hole 7, the heat is cooled and dissipated by the cooling fins 8 in the first through hole 6 and the second through hole 7, the heat in the ventilation cavity 4 is also discharged to the outside through the plurality of second through holes 9 and the corresponding ventilation slots 10, and at the same time, another part of the heat in the ventilation cavity 4 is discharged to the outside through the corresponding first heat dissipation holes 20, second heat dissipation holes 21 and first ventilation holes 11 in sequence, so as to achieve the purpose of cooling the heat generated during the operation of the N-emitting electrode 105, and at the same time, the heat generated during the operation of the substrate 100 is transferred to the plurality of heat dissipation blocks 12, the heat dissipation block 12 cools the heat generated by the substrate 100, so that the heat is discharged to the outside through the first vent hole 11, the purpose of cooling the heat generated by the substrate 100 is achieved, the heat can be rapidly dissipated by a heat dissipation and cooling mode of the N-type emitter 105 and the substrate 100, and the damage risk caused by the fact that the N-type battery piece is at a high temperature for a long time can be effectively reduced;
when an external impact force is received, the external impact force firstly extrudes the anti-wear layer 1 on the silicon nitride anti-reflection film 101, the extruding force sequentially drives the anti-wear layer 1, the silicon nitride anti-reflection film 101, the N emitter 105, the heat conduction layer 3, the heat dissipation layer 5, the substrate 100 and the first installation thin plate 13 to move downwards, the first installation thin plate 13 drives the positioning rods 16 to slide downwards in the positioning grooves, the first installation thin plate 13 extrudes the clip-shaped elastic sleeve 15, the elastic rubber block 17 and the elastic balls 19 while moving downwards, the extruding force enables the clip-shaped elastic sleeve 15, the elastic rubber block 17 and the elastic balls 19 to deform, the deformed elastic rubber block 17 and the elastic balls 19 both extrude the corresponding elastic strips 18 to deform the elastic strips 18, and the external impact force can be buffered and released under the elastic action of the clip-shaped elastic sleeve 15, the elastic rubber block 17, the elastic balls 19 and the elastic strips 18, the risk of damage to the N-type cell piece caused by large collision force is reduced.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (10)
1. The utility model provides a photovoltaic is N type battery piece for electroplax, includes base plate (100), the top of base plate (100) is equipped with N projecting pole (105), and the top bonding of N projecting pole (105) is fixed with ammoniation silicon antireflection coating (101), and the top electric connection of N projecting pole (105) has a plurality of positive electrodes (102), and the below of base plate (100) is equipped with back passivation layer (103), and the bottom of back passivation layer (103) is inlayed and is equipped with a plurality of aluminium grid lines (104), its characterized in that, fixedly connected with heat dissipation mechanism between the bottom of N projecting pole (105) and the top of base plate (100), fixedly connected with buffering unloading power mechanism between the bottom of base plate (100) and the top of back passivation layer (103).
2. The N-type cell for the photovoltaic panel as claimed in claim 1, wherein the heat dissipation mechanism comprises a heat conduction layer (3) fixed to the bottom of the N-emitter (105) in an adhering manner, the heat conduction layer (3) is provided with a ventilation cavity (4), the inner wall of the top of the ventilation cavity (4) is fixedly embedded with a plurality of refrigerating fins (2), the tops of the refrigerating fins (2) are movably contacted with the bottom of the N-emitter (105), the inner wall of the bottom of the ventilation cavity (4) is provided with a plurality of first through holes (6), a heat dissipation layer (5) is fixedly adhered between the bottom of the heat conduction layer (3) and the top of the substrate (100), the left side of the heat dissipation layer (5) is provided with a first air vent (11), the two sides of the first air vent (11) are both arranged in a bowl-shaped structure, the inner wall of the top of the first air vent (11) is provided with a plurality of second through holes (7), and the first through holes (6) are communicated with the corresponding second through holes (7), first through-hole (6) and the second through-hole (7) that corresponds all are located the below of refrigeration piece (2), cooling fin (8) that equal fixedly connected with a plurality of slopes of both sides inner wall of first through-hole (6) and the both sides inner wall of second through-hole (7) set up, control two relative cooling fin (8) symmetry and set up, a plurality of second air vent (9) have been seted up on the bottom inner wall of air vent chamber (4), air channel (10) have all been seted up to the top both sides of heat dissipation layer (5), one side that two air channel (10) kept away from each other all is established to the opening, it is equipped with a plurality of radiating block (12) to inlay on the bottom inner wall of first air vent (11), the top movable contact of the bottom of radiating block (12) and base plate (100).
3. The N-type cell for the photovoltaic panel as claimed in claim 1, wherein the buffering and force-releasing mechanism comprises a first mounting thin plate (13) adhesively fixed at the bottom of the substrate (100), a second mounting thin plate (14) adhesively fixed at the top of the back passivation layer (103), a clip-shaped elastic sleeve (15) fixedly connected between the bottom of the first mounting thin plate (13) and the top of the second mounting thin plate (14), four positioning rods (16) fixedly connected to the bottom of the first mounting thin plate (13) in a rectangular shape, a plurality of groups of elastic buffering assemblies slidably sleeved on the four positioning rods (16), and a plurality of groups of elastic buffering assemblies fixedly connected between the first mounting thin plate (13) and the second mounting thin plate (14), wherein the groups of elastic buffering assemblies are all located in the clip-shaped elastic sleeve (15).
4. The N-type cell for the photovoltaic panel as claimed in claim 3, wherein the elastic buffer assembly comprises two elastic rubber blocks (17), the top and the bottom of each elastic rubber block (17) are fixedly connected with the side, close to each other, of the first installation thin plate (13) and the second installation thin plate (14), the side, close to each other, of each elastic rubber block (17) on the same group of elastic buffer assemblies is fixedly connected with an elastic strip (18), the side, close to each other, of each elastic strip (18) on the same group of elastic buffer assemblies is fixedly connected with an elastic ball (19), and the top and the bottom of each elastic ball (19) are fixedly connected with the side, close to each other, of the first installation thin plate (13) and the second installation thin plate (14).
5. The N-type cell for photovoltaic panel as claimed in claim 1, wherein the top of the silicon-amide antireflection film (101) is bonded and fixed with a wear-resistant layer (1).
6. The N-type cell for the photovoltaic panel as claimed in claim 2, wherein the top inner wall of the ventilation cavity (4) is provided with a plurality of first embedded holes, and the inner walls of the first embedded holes are fixedly connected with the outer sides of the corresponding refrigeration sheets (2).
7. The N-type cell for the photovoltaic panel as claimed in claim 2, wherein a plurality of second embedded holes are formed in the inner wall of the bottom of the first vent hole (11), and the inner walls of the second embedded holes are fixedly connected with the outer sides of the corresponding heat dissipation blocks (12).
8. The N-type cell for photovoltaic panels according to claim 2, wherein the vent grooves (10) are in communication with a corresponding plurality of second vent holes (9).
9. The N-type cell for the photovoltaic panel as recited in claim 3, wherein the second mounting sheet (14) has a rectangular top with a plurality of positioning slots, and the inner walls of the positioning slots are slidably connected to the outer sides of the corresponding positioning rods (16).
10. The N-type cell for the photovoltaic panel as claimed in claim 2, wherein the inner wall of the bottom of the ventilation cavity (4) is provided with a plurality of first heat dissipation holes (20), the inner wall of the top of the first ventilation hole (11) is provided with a plurality of second heat dissipation holes (21), and the first heat dissipation holes (20) are communicated with the corresponding second heat dissipation holes (21).
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Citations (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101055914A (en) * | 2007-04-25 | 2007-10-17 | 乔君旺 | Thermoelectrical conversion battery |
| CN101447518A (en) * | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | Ant-apex contact heterojunction solar battery and preparation method thereof |
| JP2010187026A (en) * | 2010-05-20 | 2010-08-26 | Semiconductor Energy Lab Co Ltd | Solar cell |
| US7985919B1 (en) * | 2006-08-18 | 2011-07-26 | Nanosolar, Inc. | Thermal management for photovoltaic devices |
| US20120111394A1 (en) * | 2009-07-31 | 2012-05-10 | National University Corporation Tohoku University | Photoelectric conversion device |
| KR101145925B1 (en) * | 2011-02-07 | 2012-05-15 | 엘지전자 주식회사 | Photovoltaic thermal combined module |
| US20120247548A1 (en) * | 2011-03-31 | 2012-10-04 | Samsung Electronics Co., Ltd. | Solar cell and method of fabricating the same |
| CN103650165A (en) * | 2011-06-02 | 2014-03-19 | 喜瑞能源公司 | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
| CN204946910U (en) * | 2015-08-31 | 2016-01-06 | 深圳市科纳能薄膜科技有限公司 | A kind of back contacts heterojunction monocrystaline silicon solar cell |
| CN106206758A (en) * | 2016-08-31 | 2016-12-07 | 九州方园新能源股份有限公司 | A kind of solar cell panel assembly and processing technique |
| CN108713255A (en) * | 2016-02-26 | 2018-10-26 | 京瓷株式会社 | Solar cell device |
| US20190165195A1 (en) * | 2019-01-31 | 2019-05-30 | Jinjie Gu | Bi-facial photovoltaic power generation module |
| CN110190136A (en) * | 2019-04-23 | 2019-08-30 | 北京点域科技有限公司 | A kind of MWT solar battery and its preparation process |
| CN210156387U (en) * | 2019-08-09 | 2020-03-17 | 江苏日托光伏科技股份有限公司 | Large-size solar cell |
| CN111129195A (en) * | 2019-12-09 | 2020-05-08 | 珠海格力电器股份有限公司 | Photovoltaic module heat radiation structure, backboard glass and photovoltaic module |
| CN212571010U (en) * | 2020-11-03 | 2021-02-19 | 江苏正元堂生物科技有限公司 | Photovoltaic module that complementary photovoltaic big-arch shelter of fungus light was used |
| CN213093212U (en) * | 2020-09-12 | 2021-04-30 | 扬中市永丰能源设备有限公司 | Solar cell lamination passivation structure |
| CN213694291U (en) * | 2020-12-24 | 2021-07-13 | 深圳市睿瓷科技有限公司 | Flexible circuit board with heat dissipation layer |
| CN113394304A (en) * | 2021-07-22 | 2021-09-14 | 浙江爱旭太阳能科技有限公司 | Solar cell and back contact structure thereof, cell module and photovoltaic system |
| JP6982947B1 (en) * | 2020-12-29 | 2021-12-17 | ジョジアン ジンコ ソーラー カンパニー リミテッド | Solar cells and their manufacturing methods, photovoltaic modules |
| KR20220072494A (en) * | 2020-11-25 | 2022-06-02 | 고려대학교 산학협력단 | Solar cell and manufacturing method thereof |
-
2022
- 2022-06-13 CN CN202210659995.7A patent/CN114914321B/en active Active
Patent Citations (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7985919B1 (en) * | 2006-08-18 | 2011-07-26 | Nanosolar, Inc. | Thermal management for photovoltaic devices |
| CN101055914A (en) * | 2007-04-25 | 2007-10-17 | 乔君旺 | Thermoelectrical conversion battery |
| CN101447518A (en) * | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | Ant-apex contact heterojunction solar battery and preparation method thereof |
| US20120111394A1 (en) * | 2009-07-31 | 2012-05-10 | National University Corporation Tohoku University | Photoelectric conversion device |
| JP2010187026A (en) * | 2010-05-20 | 2010-08-26 | Semiconductor Energy Lab Co Ltd | Solar cell |
| KR101145925B1 (en) * | 2011-02-07 | 2012-05-15 | 엘지전자 주식회사 | Photovoltaic thermal combined module |
| US20120247548A1 (en) * | 2011-03-31 | 2012-10-04 | Samsung Electronics Co., Ltd. | Solar cell and method of fabricating the same |
| CN103650165A (en) * | 2011-06-02 | 2014-03-19 | 喜瑞能源公司 | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
| CN204946910U (en) * | 2015-08-31 | 2016-01-06 | 深圳市科纳能薄膜科技有限公司 | A kind of back contacts heterojunction monocrystaline silicon solar cell |
| CN108713255A (en) * | 2016-02-26 | 2018-10-26 | 京瓷株式会社 | Solar cell device |
| CN106206758A (en) * | 2016-08-31 | 2016-12-07 | 九州方园新能源股份有限公司 | A kind of solar cell panel assembly and processing technique |
| US20190165195A1 (en) * | 2019-01-31 | 2019-05-30 | Jinjie Gu | Bi-facial photovoltaic power generation module |
| CN110190136A (en) * | 2019-04-23 | 2019-08-30 | 北京点域科技有限公司 | A kind of MWT solar battery and its preparation process |
| CN210156387U (en) * | 2019-08-09 | 2020-03-17 | 江苏日托光伏科技股份有限公司 | Large-size solar cell |
| CN111129195A (en) * | 2019-12-09 | 2020-05-08 | 珠海格力电器股份有限公司 | Photovoltaic module heat radiation structure, backboard glass and photovoltaic module |
| CN213093212U (en) * | 2020-09-12 | 2021-04-30 | 扬中市永丰能源设备有限公司 | Solar cell lamination passivation structure |
| CN212571010U (en) * | 2020-11-03 | 2021-02-19 | 江苏正元堂生物科技有限公司 | Photovoltaic module that complementary photovoltaic big-arch shelter of fungus light was used |
| KR20220072494A (en) * | 2020-11-25 | 2022-06-02 | 고려대학교 산학협력단 | Solar cell and manufacturing method thereof |
| CN213694291U (en) * | 2020-12-24 | 2021-07-13 | 深圳市睿瓷科技有限公司 | Flexible circuit board with heat dissipation layer |
| JP6982947B1 (en) * | 2020-12-29 | 2021-12-17 | ジョジアン ジンコ ソーラー カンパニー リミテッド | Solar cells and their manufacturing methods, photovoltaic modules |
| CN113394304A (en) * | 2021-07-22 | 2021-09-14 | 浙江爱旭太阳能科技有限公司 | Solar cell and back contact structure thereof, cell module and photovoltaic system |
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|---|---|
| CN114914321B (en) | 2024-02-06 |
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