CN102956723A - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN102956723A CN102956723A CN2011102398058A CN201110239805A CN102956723A CN 102956723 A CN102956723 A CN 102956723A CN 2011102398058 A CN2011102398058 A CN 2011102398058A CN 201110239805 A CN201110239805 A CN 201110239805A CN 102956723 A CN102956723 A CN 102956723A
- Authority
- CN
- China
- Prior art keywords
- layer
- single crystal
- amorphous silicon
- type single
- crystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention provides a solar cell which comprises a metal aluminum layer, an SiO2 passivation layer, an N type single crystal silicon substrate, an intrinsic amorphous silicon layer, an N+ type amorphous silicon layer, a transparent conductive layer and silver electrodes from bottom to top. The N type single crystal silicon substrate and the N+ type amorphous silicon layer form a homotype-hetero-junction, and the metal aluminum layer and the N type single crystal silicon substrate form P-N junctions through point contact. The invention further provides a preparation method for the solar cell. The solar cell has the photoelectric conversion efficiency up to more than 16.87% and is short in time of preparation process.
Description
Technical field
The invention belongs to technical field of solar, relate in particular to a kind of solar cell and preparation method thereof.
Background technology
Adopting P type silicon chip to produce solar cell is the main flow of Developing.Just prepare P type cell piece as far back as the sixties in 20th century, through improving Production design technique, such as pyramid structure, the measure that shallow junction diffusion and printing aluminium back surface field etc. is intended to reduce light loss and increases the photo-generated carrier collection efficiency, thereby the electricity conversion of raising cell piece.
The theoretical transformation efficient of unijunction solar cell is 49%, deduct the limiting efficiency that loss that inevitable multiple mechanism causes and auger effect finally can reach and be about 29%, but be subjected to the actual electricity conversion of P type silicon solar cell of the present main flow suitability for industrialized production of impact of boron oxygen complex in the silicon chip still lower, want in the situation that do not increase cost and further improve very difficult.So people begin sight is invested the minority carrier lifetime N-type silicon more much higher than P type silicon, and make great progress.
The present more representative N that mainly contains Schott Solar company of N-type silicon solar battery structure
+NP type solar cell.The average efficiency of N-type silicon solar cell is higher than the efficient of P type silicon, but its technique that is that all right at present is ripe; And this N
+The electricity conversion of NP back of the body junction battery is still lower.This N
+The preparation method of NP type solar cell is complicated, and preparation cost is high.
Summary of the invention
The invention solves the N that exists in the prior art
+The technical problem that electricity conversion is low, preparation cost is high of NP back of the body junction battery.
The invention provides a kind of solar cell, described solar cell comprises metal aluminium lamination, SiO from bottom to up successively
2Passivation layer, n type single crystal silicon substrate, intrinsic amorphous silicon layer, N
+Type amorphous silicon layer, transparency conducting layer and silver electrode; Described n type single crystal silicon substrate and N
+The type amorphous silicon layer forms the homotype heterojunction, and the metal aluminium lamination contacts by point with the n type single crystal silicon substrate and forms the P-N knot
The present invention also provides the preparation method of described solar cell, may further comprise the steps:
A, at the backside deposition SiO of n type single crystal silicon substrate
2Passivation layer;
B, at SiO
2Then type metal aluminium lamination on the passivation layer makes the metal aluminium lamination contact with n type single crystal silicon substrate point by laser emission and forms the P-N knot;
C, form successively intrinsic amorphous silicon layer and N in the front of n type single crystal silicon substrate by the plasma reinforced chemical vapour deposition method
+The type amorphous silicon layer;
D, at N
+Type amorphous silicon layer surface forms transparency conducting layer by sputtering method, then at layer at transparent layer printed silver electrode.
Solar cell provided by the invention by adopting the wider intrinsic amorphous silicon of band gap in the n type single crystal silicon substrate face, has strengthened the shortwave effect on the one hand, improves the capacity usage ratio of incident ray, thereby improves electricity conversion; On the other hand by forming SiO at the n type single crystal silicon substrate back
2Passivation layer reduces the contact area of monocrystalline substrate and metal aluminium lamination, thereby reduces the recombination rate of charge carrier, improves electricity conversion.The preparation method of solar cell provided by the invention, N
+The type amorphous silicon layer is by the PECVD(plasma reinforced chemical vapour deposition) technique formation, cell backside P-N ties by laser sintered formation, and the process time shortens greatly, reduces energy consumption when reducing the process time, and preparation cost is reduced greatly.
?
Description of drawings
Fig. 1 is the structural representation of solar cell provided by the invention.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
Particularly, the invention provides a kind of solar cell, as shown in Figure 1, described solar cell comprises metal aluminium lamination 8, SiO from bottom to up successively
2Passivation layer 7, n type single crystal silicon substrate 5, intrinsic amorphous silicon layer 4, N
+Type amorphous silicon layer 3, transparency conducting layer 2 and silver electrode 1; Described n type single crystal silicon substrate 5 and N
+Type amorphous silicon layer 3 forms the homotype heterojunction, is formed with P-N and ties 6 by contacting between metal aluminium lamination 8 and the n type single crystal silicon substrate 5.
Solar cell provided by the invention by adopting the wider intrinsic amorphous silicon of band gap in the n type single crystal silicon substrate face, has strengthened the shortwave effect on the one hand, improves the utilance of incident ray, thereby improves electricity conversion; On the other hand by forming SiO at the n type single crystal silicon substrate back
2Passivation layer reduces the contact area of monocrystalline substrate and metal aluminium lamination, thereby reduces the recombination rate of charge carrier, improves electricity conversion.
Among the present invention, metal aluminium lamination 8 its thickness are 10-20 μ m.SiO
2Passivation layer 7 can effectively reduce the contact area of monocrystalline substrate 5 and metal aluminium lamination 8 between metal aluminium lamination 8 and n type single crystal silicon substrate 5, thereby reduces the recombination rate of charge carrier.Described SiO
2The thickness of passivation layer is 100-200nm.
N type single crystal silicon substrate (N-C-Si) is various silicon chip known in those skilled in the art, does not have particularity to limit among the present invention.Under the preferable case, the thickness of described n type single crystal silicon substrate is 200 ± 20 μ m.More preferably in the situation, n type single crystal silicon resistance substrate rate is 1-100 Ω cm, and the life-span of few son is 100 μ s-1ms.
Intrinsic amorphous silicon layer (i-a-Si:H) 4 is as n type single crystal silicon substrate 5 and N
+Resilient coating between the type amorphous silicon layer 3 can effectively reduce the heterojunction boundary density of states.The optical band gap of described intrinsic amorphous silicon layer (i-a-Si:H) is 1.70-1.74eV, can strengthen the shortwave effect, improves the utilance of incident ray, thereby improves electricity conversion.Among the present invention, the thickness of described intrinsic amorphous silicon layer is 5-20nm.
N
+Type amorphous silicon layer (N
+-a-Si:H) be conventionally known to one of skill in the art, repeat no more among the present invention.Particularly, described N
+The thickness of type amorphous silicon layer is 5-20nm.
Described transparency conducting layer 2 is positioned at N
+Type amorphous silicon layer 3 surfaces, its thickness are 50-120nm.Transparency conducting layer can adopt various transparent conductive films commonly used in the prior art, for example can adopt indium tin oxide films layer (SnO
2: In, be abbreviated as ITO) or mix the zinc oxide films rete (ZnO:Al is abbreviated as AZO) of aluminium.
Described silver electrode 1 is positioned at transparency conducting layer 2 surfaces, and is electrically connected with transparency conducting layer, is used for collecting the inside solar energy battery electric current.The thickness of described silver electrode is 5-10 μ m, and live width is 100-150 μ m, and distance between centers of tracks is 2-3mm.
Among the present invention, aluminum metal layer reacts with the n type single crystal silicon substrate under LASER HEATING, forms the Si-Al alloy, constructs described P-N knot.The number of described P-N knot is selected according to actual needs.Under the preferable case, the number of P-N knot is 100-200, but is not limited to this.
As those skilled in the art's common practise, the surface of the metal aluminium lamination of described solar cell also is printed with silver electrode (not shown in the accompanying drawing).Although the metal aluminium lamination can conduct electricity, imaginary point can appear in aluminium and the welding welding process, and welding effect is poor, easily causes breaking phenomena to produce, and therefore directly adopts the metal aluminium lamination and can't satisfy welding requirements during the follow-up encapsulation of non-printed silver electrode.
The present invention also provides the preparation method of described solar cell, may further comprise the steps:
A, at the backside deposition SiO of n type single crystal silicon substrate
2Passivation layer;
B, at SiO
2Then type metal aluminium lamination on the passivation layer contacts formation P-N knot by the laser sintered metal aluminium lamination that makes with n type single crystal silicon substrate point;
C, form successively intrinsic amorphous silicon layer and N in the front of n type single crystal silicon substrate by plasma reinforced chemical vapour deposition method (PECVD)
+The type amorphous silicon layer;
D, at N
+Type amorphous silicon layer surface forms transparency conducting layer by sputtering method, then at layer at transparent layer printed silver electrode.
Under the preferable case, the n type single crystal silicon substrate back is deposited SiO
2Before the passivation layer, need that also it is carried out RCA and clean.The purpose that described RCA cleans is oxide layer, greasy dirt and the various impurity in order to remove described n type single crystal silicon substrate surface, and its concrete steps are conventionally known to one of skill in the art, repeat no more among the present invention.
More preferably in the situation, also be included in the RCA cleaning and before etched step carried out in the front of n type single crystal silicon substrate, described etching solution is alkaline solution, for example NaOH or KOH.After etching was finished, the surface of n type single crystal silicon substrate formed more well-regulated pyramid structure, had increased the sunken luminous effect on surface, had reduced the incident reflection of light, thus the utilance of Effective Raise incident light.
The method according to this invention, the backside deposition SiO of the n type single crystal silicon substrate of finishing at cleaning-drying
2Passivation layer.Described deposition SiO
2Passivation layer is the wet oxygen method, and its concrete steps comprise: N shape monocrystalline substrate is placed quartz ampoule, pass into steam and oxygen, be heated to 900 ℃ at N shape monocrystalline substrate surface formation SiO
2Film.
The method according to this invention forms described SiO
2Behind the passivation layer, then at its surface printing metal aluminium lamination.The printing process that described type metal aluminium adopts is conventionally known to one of skill in the art, for example can adopt silk screen printing, does not have particular determination among the present invention.
Described metal aluminium lamination is positioned at SiO
2Then passivation layer surface adopts laser sintered (LFC) metal aluminium lamination surface, makes the metallic aluminium melting in laser sintered zone and infiltration pass SiO
2Passivation layer and n type single crystal silicon substrate contact namely form described P-N knot.Among the present invention, laser sintered condition comprises: optical maser wavelength is 380-1200nm, and heating-up temperature is 800-1400 ℃, and spot size is 100-200 μ m, and sintering time is 1-5s.
Behind abovementioned steps formation P-N knot, namely finish the back of the body knot of silicon chip and make, then the front of n type single crystal silicon substrate is processed.Particularly, first by chemical vapour deposition technique at the front of n type single crystal silicon substrate deposition intrinsic amorphous silicon layer, then deposit N
+The type amorphous silicon layer.Wherein, the step of deposition intrinsic amorphous silicon layer comprises the n type single crystal silicon substrate is placed plasma enhanced chemical vapor deposition chamber, be under 170-200 ℃ at the n type single crystal silicon underlayer temperature, take silane and hydrogen as reacting gas on the n type single crystal silicon substrate deposit thickness as the intrinsic amorphous silicon layer of 5-20nm.
After forming intrinsic amorphous silicon layer, need not to take out product, pass into the reacting gas that contains silane, hydrogen phosphide and hydrogen again, deposit thickness is the N of 5-20nm on intrinsic amorphous silicon layer
+The type amorphous silicon layer.
At present, N for example in the prior art
+In the NP type battery, N
+The type monocrystalline silicon layer is by adopting diffusion method preparation, the technique 40-45min that reaches consuming time in high temperature dispersing furnace; High-temperature technology is larger to the silicon chip surface damage in the diffusion process simultaneously.And among the present invention, intrinsic amorphous silicon layer and N
+The type amorphous silicon layer all forms at low temperatures by pecvd process, has reduced the damage to silicon chip surface, and the process time is shortened greatly.
Among the present invention, during the deposition intrinsic amorphous silicon layer, the flow of silane is 2 scc, and the gas flow of hydrogen is 20-40 scc.Deposition N
+During the type amorphous silicon layer, the gas flow of silane is 2 scc, and the gas flow of hydrogen phosphide is 10-15scc, and the gas flow of hydrogen is 40-100 scc.More preferably in the situation, described hydrogen phosphide adopts 1vol%PH
3
The method according to this invention is at last at N
+Type amorphous silicon layer surface adopts sputtering method to form transparency conducting layer, and at layer at transparent layer printed silver electrode.Described sputtering method can adopt magnetron sputtering to finish, and comprises the front is formed with intrinsic amorphous silicon layer and N
+The n type single crystal silicon substrate of type amorphous silicon layer places the vacuum sputtering chamber, take ITO or AZO as target, at N
+Type amorphous silicon layer surface sputtering thickness is that 50-120nm, transmitance 〉=85%, the resistivity order of magnitude are 10
-4The transparency conducting layer of Ω cm.
The printing process of described silver electrode can be adopted the whole bag of tricks commonly used in the prior art, for example can adopt silk screen printing, resistance heat evaporation or electron beam evaporation, and the present invention does not have particular determination.
The preparation method of solar cell provided by the invention, technique are simply easy to implement, and technique is consuming time shorter.
Embodiment 1
(1) adopting thickness is 220 μ m, and resistivity is 10 Ω cm, minority carrier life time be the n type single crystal silicon sheet of 1ms as substrate, adopt NaOH solution that different in nature etching is carried out in the front of substrate, make its concave-convex surface, then carry out RCA and clean, dry after cleaning.
(2) substrate back passivation: N shape monocrystalline substrate is placed quartz ampoule, pass into steam and oxygen, being heated to 900 ℃ is the SiO of 120nm at described N shape monocrystalline substrate surface formation thickness
2Film.
(3) LFC: adopt silk-screen printing technique at the SiO of N-type substrate back
2Type metal Al layer on the film, forming thickness is the metal aluminium lamination of 15 μ m; Then laser sintered metal aluminium lamination makes the metal aluminium lamination contact with N-type silicon substrate point, forms 100 P-N knots; Laser sintered condition comprises: optical maser wavelength is 500nm, and heating-up temperature is 1000 ℃, and spot size is 150 μ m, and sintering time is 1s.
(4) PECVD: the silicon chip of step (3) is put into PECVD indoor, be heated to 170 ° of C, import hydrogen, carry out plasma discharge, the cleaning silicon chip surface; Then import SiH
4And H
2Mist (SiH wherein
4Flow is 2scc, H
2Flow is 30scc), it is the intrinsic amorphous silicon layer (i-a-Si:H) of 10nm that silicon temperature remains under 170 ℃ at the front of silicon chip deposit thickness; Then import and contain SiH
4, 1vol%PH
3And H
2Mist (wherein, SiH
4Flow is 2scc, 1vol%PH
3Flow is 12scc, H
2Flow is 60scc), it is the N of 10nm that silicon temperature remains under 170 ° of C at the intrinsic amorphous silicon layer deposit thickness
+Type amorphous silicon layer (N
+-a-Si:H).
(5) electrode preparation: the silicon chip of step (4) is placed the vacuum sputtering chamber, take tin indium oxide as target, at N
+Type amorphous silicon layer surface magnetic control sputtering thickness is that 100nm, transmitance 〉=85%, the resistivity order of magnitude are 2 * 10
-4The ITO layer of Ω cm, then silk screen printing thickness is 8 μ m, and live width is 100 μ m, and distance between centers of tracks is the silver electrode of 2mm, obtains the solar cell S1 of the present embodiment, has structure shown in Figure 1.
Embodiment 2
Adopt the step identical with embodiment 1 to prepare the solar cell S2 of the present embodiment, difference is:
In the step (2), N shape monocrystalline substrate is placed quartz ampoule, pass into steam and oxygen, being heated to 900 ℃ is the SiO of 150nm at described N shape monocrystalline substrate surface formation thickness
2Film.
Embodiment 3
Adopt the step identical with embodiment 1 to prepare the solar cell S3 of the present embodiment, difference is:
In the step (3), the thickness of metal aluminium lamination is 20 μ m, and the number of P-N is 150.
Embodiment 4
Adopt the step identical with embodiment 1 to prepare the solar cell S4 of the present embodiment, difference is:
In the step (4), during the deposition intrinsic amorphous silicon, silicon temperature is 200 ℃, and the thickness of intrinsic amorphous silicon layer is 20nm; Deposition N
+During the type amorphous silicon, silicon temperature is 200 ℃, N
+The thickness of type amorphous silicon layer is 20nm.
Embodiment 5
Adopt the step identical with embodiment 1 to prepare the solar cell S5 of the present embodiment, difference is:
In the step (4), transparency conducting layer is the AZO layer, and thickness is 120nm; The thickness of silver electrode is 10 μ m, and live width is 150 μ m, and distance between centers of tracks is 3mm.
Comparative Examples 1
To carry out behind the cleaning and texturing the n type single crystal silicon sheet be written in the diffusion furnace and prepare N by diffusion method
+Top electric field, temperature are 850 ℃, and sheet resistance is 40 Ω/ after the diffusion.Slice, thin piece after the diffusion being written among the PECVD, then passing into silane and ammonia, is the SiN of 100nm in the front of cell piece plating a layer thickness under 450 ℃
xAntireflective film, then at the back side of cell piece silk screen printing Al metal level, front and back all prints the Ag electrode, and 850 ℃ of lower sintering obtain the N of the present embodiment
+NP solar cell sample DS1.
Performance test:
Adopt the I-V tester of the QC120CA of Endeas company to test solar cell sample S1-S5 and DS1.Test result is as shown in table 1.
Table 1
Annotate: in the upper table 1, the silicon chip that described technique is consuming time after referring to clean from making herbs into wool is consuming time to the technique of finished product cell piece.
Test result by upper table 1 can find out, the electricity conversion of solar cell sample S1-S5 provided by the invention obviously is better than the battery sample DS1 of Comparative Examples 1 up to more than 16.87%; In addition, among the present invention, the preparation technology of described solar cell is simple, and is consuming time short, greatly shortens the process time.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (12)
1. a solar cell is characterized in that, described solar cell comprises metal aluminium lamination, SiO from bottom to up successively
2Passivation layer, n type single crystal silicon substrate, intrinsic amorphous silicon layer, N
+Type amorphous silicon layer, transparency conducting layer and silver electrode; Described n type single crystal silicon substrate and N
+The type amorphous silicon layer forms the homotype heterojunction, and described metal aluminium lamination contacts by point with the n type single crystal silicon substrate and forms the P-N knot.
2. solar cell according to claim 1 is characterized in that, the thickness of metal aluminium lamination is 10-20 μ m, SiO
2The thickness of passivation layer is 100-200nm, and the thickness of n type single crystal silicon substrate is 200 ± 20 μ m, and the thickness of intrinsic amorphous silicon layer is 5-20nm, N
+The thickness of type amorphous silicon layer is 5-20nm, and the thickness of transparency conducting layer is 50-120nm.
3. solar cell according to claim 1 and 2 is characterized in that, n type single crystal silicon resistance substrate rate is 1-100 Ω cm, and the life-span of few son is 100 μ s-1ms; The thickness of silver electrode is 5-10 μ m, and live width is 100-150 μ m, and distance between centers of tracks is 2-3mm.
4. solar cell according to claim 1 and 2 is characterized in that, described transparency conducting layer is indium tin oxide films layer or the zinc oxide films rete of mixing aluminium.
5. solar cell according to claim 1 and 2 is characterized in that, the number of P-N knot is 100-200.
6. the preparation method of solar cell claimed in claim 1 is characterized in that, may further comprise the steps:
A, at the backside deposition SiO of n type single crystal silicon substrate
2Passivation layer;
B, at SiO
2Then type metal aluminium lamination on the passivation layer contacts formation P-N knot by the laser sintered metal aluminium lamination that makes with n type single crystal silicon substrate point;
C, form successively intrinsic amorphous silicon layer and N in the front of n type single crystal silicon substrate by the plasma reinforced chemical vapour deposition method
+The type amorphous silicon layer;
D, at N
+Type amorphous silicon layer surface forms transparency conducting layer by sputtering method, then at layer at transparent layer printed silver electrode.
7. method according to claim 6 is characterized in that, the n type single crystal silicon substrate back is being deposited SiO
2Also comprise before the passivation layer n type single crystal silicon substrate is carried out the step that RCA cleans.
8. method according to claim 6 is characterized in that, in the steps A, and deposition SiO
2The step of passivation layer is: N shape monocrystalline substrate is placed quartz ampoule, pass into steam and oxygen, be heated to 900 ℃ at described N shape monocrystalline substrate surface formation SiO
2Film.
9. method according to claim 6 is characterized in that, among the step B, laser sintered condition comprises: optical maser wavelength is 380-1200nm, and heating-up temperature is 800-1400 ℃, and spot size is 100-200 μ m, and sintering time is 1-5s.
10. method according to claim 6, it is characterized in that, among the step C, the step that forms intrinsic amorphous silicon layer comprises that the n type single crystal silicon substrate with process step B places plasma enhanced chemical vapor deposition chamber, be under 170-200 ℃ at the n type single crystal silicon underlayer temperature, take silane and hydrogen as reacting gas on the n type single crystal silicon substrate deposit thickness as the intrinsic amorphous silicon layer of 5-20nm.
11. method according to claim 10 is characterized in that, among the step C, forms N
+The step of type amorphous silicon layer comprises that the n type single crystal silicon substrate that the surface is formed with intrinsic amorphous silicon layer places plasma enhanced chemical vapor deposition chamber, be under 170-200 ℃ at the n type single crystal silicon underlayer temperature, take silane, hydrogen phosphide and hydrogen as reacting gas on intrinsic amorphous silicon layer deposit thickness as the N of 5-20nm
+The type amorphous silicon layer.
12. method according to claim 6 is characterized in that, among the step D, the step that sputtering method forms transparency conducting layer comprises that the n type single crystal silicon substrate with process step C places the vacuum sputtering chamber, at N
+Type amorphous silicon layer surface sputtering thickness is that 50-120nm, transmitance 〉=85%, the resistivity order of magnitude are 10
-4The indium tin oxide films layer of Ω cm or mix the zinc oxide films rete of aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110239805.8A CN102956723B (en) | 2011-08-21 | 2011-08-21 | A kind of solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110239805.8A CN102956723B (en) | 2011-08-21 | 2011-08-21 | A kind of solar cell and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102956723A true CN102956723A (en) | 2013-03-06 |
| CN102956723B CN102956723B (en) | 2016-05-11 |
Family
ID=47765257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110239805.8A Active CN102956723B (en) | 2011-08-21 | 2011-08-21 | A kind of solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102956723B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227241A (en) * | 2013-04-10 | 2013-07-31 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of double-faced crystalline silicon solar cell |
| TWI509815B (en) * | 2013-09-11 | 2015-11-21 | ||
| CN106159022A (en) * | 2015-03-27 | 2016-11-23 | 比亚迪股份有限公司 | A kind of crystal silicon solar cell sheet and preparation method thereof |
| CN110212039A (en) * | 2019-05-30 | 2019-09-06 | 江苏欧达丰新能源科技发展有限公司 | The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell |
| CN110289321A (en) * | 2019-05-14 | 2019-09-27 | 江苏顺风光电科技有限公司 | The preparation method of the laser sintered PERC solar battery of rear electrode |
| CN111725350A (en) * | 2019-03-19 | 2020-09-29 | 中国科学院宁波材料技术与工程研究所 | Method for improving passivation performance of polycrystalline silicon passivation contact structure in solar cell |
| CN113964228A (en) * | 2021-02-08 | 2022-01-21 | 长沙壹纳光电材料有限公司 | Heterojunction solar cell and preparation method and application thereof |
| CN109004053B (en) * | 2017-06-06 | 2024-03-29 | 通威太阳能（成都）有限公司 | Crystalline silicon/thin film silicon heterojunction solar cell with double-sided light receiving function and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179100A (en) * | 2007-01-17 | 2008-05-14 | 江苏林洋新能源有限公司 | Manufacturing method of large area low bending flexure ultra-thin type double face lighting solar cell |
| CN101447518A (en) * | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | Ant-apex contact heterojunction solar battery and preparation method thereof |
-
2011
- 2011-08-21 CN CN201110239805.8A patent/CN102956723B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179100A (en) * | 2007-01-17 | 2008-05-14 | 江苏林洋新能源有限公司 | Manufacturing method of large area low bending flexure ultra-thin type double face lighting solar cell |
| CN101447518A (en) * | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | Ant-apex contact heterojunction solar battery and preparation method thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227241A (en) * | 2013-04-10 | 2013-07-31 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of double-faced crystalline silicon solar cell |
| TWI509815B (en) * | 2013-09-11 | 2015-11-21 | ||
| CN106159022A (en) * | 2015-03-27 | 2016-11-23 | 比亚迪股份有限公司 | A kind of crystal silicon solar cell sheet and preparation method thereof |
| CN106159022B (en) * | 2015-03-27 | 2018-03-27 | 比亚迪股份有限公司 | A kind of crystal silicon solar cell sheet and preparation method thereof |
| CN109004053B (en) * | 2017-06-06 | 2024-03-29 | 通威太阳能（成都）有限公司 | Crystalline silicon/thin film silicon heterojunction solar cell with double-sided light receiving function and manufacturing method thereof |
| CN111725350A (en) * | 2019-03-19 | 2020-09-29 | 中国科学院宁波材料技术与工程研究所 | Method for improving passivation performance of polycrystalline silicon passivation contact structure in solar cell |
| CN111725350B (en) * | 2019-03-19 | 2024-03-08 | 中国科学院宁波材料技术与工程研究所 | Method for improving passivation performance of polycrystalline silicon passivation contact structure in solar cell |
| CN110289321A (en) * | 2019-05-14 | 2019-09-27 | 江苏顺风光电科技有限公司 | The preparation method of the laser sintered PERC solar battery of rear electrode |
| CN110212039A (en) * | 2019-05-30 | 2019-09-06 | 江苏欧达丰新能源科技发展有限公司 | The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell |
| CN113964228A (en) * | 2021-02-08 | 2022-01-21 | 长沙壹纳光电材料有限公司 | Heterojunction solar cell and preparation method and application thereof |
| CN113964228B (en) * | 2021-02-08 | 2023-09-26 | 长沙壹纳光电材料有限公司 | Heterojunction solar cell and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102956723B (en) | 2016-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102956723B (en) | A kind of solar cell and preparation method thereof | |
| CN103996746B (en) | Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced | |
| CN102623517B (en) | Back contact type crystalline silicon solar cell and production method thereof | |
| CN106601855A (en) | Preparation method of double-side power generation heterojunction solar cell | |
| CN103489934A (en) | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof | |
| CN102738304B (en) | Method for manufacturing back electrode of crystalline silicon solar cell by using local aluminum back surface field structure | |
| CN104752562A (en) | Preparation method of local boron back surface passive field solar cell | |
| JP2021061395A (en) | Solar cell and manufacturing method thereof | |
| CN105789342A (en) | Oxide-metal multilayer film back contact crystalline silicon solar cell and preparation method thereof | |
| KR101597532B1 (en) | The Manufacturing Method of Back Contact Solar Cells | |
| CN102800745A (en) | Method for producing rear passivation double-sided solar cell | |
| CN114678430B (en) | Electron selective passivation contact structure, solar cell and preparation method | |
| CN110047965A (en) | A kind of novel back contacts hetero-junction solar cell and preparation method thereof | |
| CN102214719B (en) | Back contact heterojunction solar battery based on N-type silicon slice | |
| CN208352305U (en) | A kind of p-type back contacts solar cell | |
| CN110137305A (en) | A kind of preparation method of p-type polysilicon selective emitter double-side cell | |
| CN102185030A (en) | Preparation method of back contact HIT solar battery based on N-type silicon wafer | |
| KR20090075421A (en) | Solar cell | |
| CN102214720B (en) | Back contact heterojunction solar battery based on P-type silicon slice | |
| CN103390660A (en) | Crystalline silicon solar cell and manufacturing method thereof | |
| CN103367514B (en) | A kind of arcuate bottom electrode film solar cell | |
| CN115377254B (en) | Heterojunction solar cell and molding process of heterojunction solar cell component | |
| CN103489933A (en) | Novel crystalline silicon solar cell and preparation method thereof | |
| CN102403406B (en) | Preparation method for back contact type silicon solar cell | |
| CN102969371A (en) | Structure of two-surface solar cell and manufacturing method of structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |