CN102800745A - Method for producing rear passivation double-sided solar cell - Google Patents
Method for producing rear passivation double-sided solar cell Download PDFInfo
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- CN102800745A CN102800745A CN201210228102XA CN201210228102A CN102800745A CN 102800745 A CN102800745 A CN 102800745A CN 201210228102X A CN201210228102X A CN 201210228102XA CN 201210228102 A CN201210228102 A CN 201210228102A CN 102800745 A CN102800745 A CN 102800745A
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Abstract
The invention discloses a method for producing a rear passivation double-sided solar cell. The method sequentially comprises the following steps of: positive cleaning, making a texture surface, forming a PN junction through diffusion, performing periphery and rear etching, evaporating a positive SiNx anti-reflection film, evaporating a rear passivation film or/and SiNx [11] passivation film or other passivation films, performing screen printing on a back electrode, performing screen printing on a positive electrode, and sintering. The method for producing the rear passivation double-sided solar cell has the advantages that the compounding rate of the rear surface can be greatly reduced, the back reflection is improved, and the more photon-generated carriers are collected. Compared with processes such as photoetching, laser sintering and laser opening, the method is simple in process flow and suitable for mass production. The actual working and generating efficiency can be effectively improved. The used equipment is compatible with the traditional solar cell equipment, the equipment does not need to be increased, the process cost is low, the capacity is high, and the method has good industry prospects.
Description
Technical field
The present invention relates to the production of double-side solar cell, specifically be meant a kind of production method of passivating back double-side solar cell.
Background technology
Business-like back of solar cell needs the silk screen printing aluminium paste, forms one deck P through the back side behind the high temperature sintering
+Dense diffusion layer and the P of substrate
-Form P
+P
-Structure, produce one with the more weak internal electric field of pn knot internal electric field direction same electric field intensity, minority carrier electronics in the base is played the effect of backside reflection, reduced the diffusion recombination losses on the surface of supporting or opposing, so P
+P
-Structure can improve photovoltage and short circuit current.Aluminium back of the body field also has the effect of gettering in addition, can absorb impurity and defective in the body.But aluminium back of the body field has the characteristic of high compound and low reflection, has limited the lifting of commercialization efficiency of solar cell, the high-efficiency crystal silicon cell of some passivating backs therefore occurred.
In prior art, the solar cell production method is simple, and production capacity is bigger, but the efficient of battery is not high.
Summary of the invention
The object of the present invention is to provide a kind of production method of passivating back double-side solar cell; Its backside passivation layer adopts the single layer structure of silicon dioxide or carborundum or amorphous silicon or backside passivation layer to adopt alundum (Al/silicon nitride, silicon dioxide/silicon nitride, carborundum/silicon nitride, amorphous silicon/silicon nitride, alchlor/silicon nitride stack structure; Silk screen printing has corrosive silver-colored aluminum slurry on passivation layer; Realize simultaneously during sintering forming local aluminium back of the body field to the backside passivation layer opening with at the electrode contact point; Effectively reduced the contact resistance of metal semiconductor contact point so on the one hand; The butt contact metallic region forms local aluminium back of the body field and carries out effective passivation simultaneously, has reduced back of the body recombination-rate surface, has significantly improved the conversion efficiency of battery; In addition because back of the body surface has only the subregion to be metallized covering, also can be used for generating from the incident light at the back side, this has just formed the double-side solar cell structure, has increased the actual power amount.
Implementation of the present invention is following: a kind of production method of passivating back double-side solar cell comprises the steps;
Step 1: silicon chip is carried out preceding the cleaning and making herbs into wool; The preceding affected layer that cleans to remove silicon chip surface is as the criterion, and processes matte at the battery front surface simultaneously;
Step 2: with above-mentioned silicon chip as silicon substrate deposit doped source and spread the preparation p-n junction;
Step 3: the back is cleaned, and is as the criterion to remove back of the body knot, periphery and phosphorosilicate glass;
Step 4: vapor deposition antireflective film in the front of silicon chip;
Step 5: form backside passivation layer in silicon chip back, backside passivation layer adopt silicide as passivation layer or adopt compatible mutually with the silicon chip treatment process and and silicon chip surface form good passive behavior material as passivation layer; The passivating material of wherein preferentially selecting three oxidations, two this non-silicides for use if silicide is arranged, preferentially selects for use silicide as passivation layer as passivation layer;
Step 6: adopt the local method for printing screen to form grid line in silicon chip back; Sintering realization office aluminium is carried on the back the field then; Good contact to the realize grid line and silicon chip is as the criterion, and said grid line comprises the back side main grid and thin grid line that axis is orthogonal and contact, and thin grid line is the silver-colored aluminium paste grid line of high-penetrability;
Step 7: adopt the method for conventional silk screen printing, make front electrode at battery front side;
Step 8: the annealing of sintering fire is so that form good Ohmic contact;
Step 9: test, sorting.
Doped source in the step 2 is compound or the mixture that contains phosphorus dopant; Its deposition process is spraying or printing or gas source diffusion.
In step 5, when the number of plies of backside passivation layer is 1 layer:
Backside passivation layer is alundum (Al passivation layer perhaps [l1]
When backside passivation layer is the number of plies when being 2 laminated construction:
The nexine of backside passivation layer is alundum (Al passivation layer or silicon dioxide passivation layer or carborundum or amorphous silicon passivation layer, and skin is a silicon nitride passivation;
[l2] wherein nexine between the silicon chip back side and skin.
Adopt said structure can greatly reduce back of the body recombination-rate surface, improve infrared light back reflection rate as passivation layer.
In step 5, the formation method of backside passivation layer is plasma enhanced chemical vapor deposition method (PECVD) or sputtering method or sol-gal process or atomic layer deposition method (ALD).
In step 6, if behind the first printed back main grid during the thin grid line of printing, back side main grid is a non-penetrative silver slurry grid line; When if the printed back main grid carries out with the thin grid line of printing simultaneously, back side main grid is a penetrability silver aluminium paste grid line.
In step 4, said antireflective film adopt silicon nitride film or adopt big refractive index and compatible mutually with silicon treatment process, with silicon the materials A of good interface characteristic is arranged.
Materials A is the dielectric material of visible transparent.
Materials A is TiO
2Material or Al
2O
3Material or SiN
xC
yMaterial or SiN
xO
yMaterial.
It is characterized in that: said silicon chip is a P type silicon chip.
In step 3, the method for back of the body knot and periphery of removing is removed back of the body knot and periphery for the mixed solution that adopts nitric acid, hydrofluoric acid and water, removes the method for phosphorosilicate glass and removes phosphorosilicate glass for the mixed solution that adopts hydrochloric acid, hydrofluoric acid and water.
For reducing the compound speed of photo-generated carrier, clean and making herbs into wool before need carrying out silicon chip, remove the affected layer of silicon chip surface, simultaneously in order to reduce reflectivity, need process matte at the battery front surface.
During general concrete operations, generally earlier P type silicon chip surface is carried out preceding cleaning, remove surface damage layer, form the anti-reflection suede structure simultaneously with chemical solution; The general thickness of removing surface damage layer is 3 ~ 5um.
Then P type silicon chip is put in the diffusion furnace tube, adopted the diffusion of POCl3 liquid source, form p-n junction, its diffusion side's resistance is 30 ~ 120 ohm;
Adopt the mixed solution of nitric acid, hydrofluoric acid and water to remove back of the body knot and periphery again, adopt the mixed solution of hydrochloric acid, hydrofluoric acid and water to remove phosphorosilicate glass and metal ion;
In the front of battery, PECVD prepares double-deck silicon nitride antireflective coating;
At the back side of battery, ALD prepares di-aluminium trioxide film, and thickness is 25-35nm; The thickness of general di-aluminium trioxide film reaches 30nm and gets final product.
Adopt the local method for printing screen to form grid line in silicon chip back then; The method that forms grid line is 2 kinds; A kind of is the thin grid line of printing behind the first printed back main grid; If during the thin grid line of printing, back side main grid adopts non-penetrative silver slurry printing formation non-penetrative silver slurry grid line, prepares backplate with this behind the first printed back main grid; A kind of is that the printed back main grid carries out with the thin grid line of printing simultaneously, if the printed back main grid carries out with the thin grid line of printing simultaneously, back side main grid adopts penetrability silver aluminium paste printing formation penetrability silver aluminium paste grid line; The width of general thin grid line is 70-90 μ m, and metallization area accounts for backside area 3-10%; Carefully grid line all adopts penetrability silver aluminium paste printing formation penetrability silver aluminium paste grid line in above-mentioned two kinds of methods, forms local aluminium back of the body field with this.
In last two kinds of methods; All carry out regionality printing, the battery back of the body surface after therefore forming has only the subregion to be covered by metal, can produce electric energy equally from the light of cell backside incident; So just form two-sided battery structure, can effectively increase the real work generating efficiency.The silver-colored aluminium paste of silk screen printing high-penetrability on the passivation layer overleaf simultaneously forms the self aligned local aluminium back of the body, the ohmic contact that can realize.
Silk screen printing front electrode then; Sintering is to form good Ohmic contact;
Test at last and sorting.
In the present invention.Compare conventional solar cell production technology, solar cell production technology of the present invention has increased backside passivation layer, can reduce the recombination rate on back of the body surface greatly, improves back reflection, increases the collection of photo-generated carrier.
Silk screen printing of the present invention has corrosive silver-colored aluminium paste on backside passivation layer, and the silver aluminium paste penetrates passivation layer and reacts carrying on the back the surface during sintering, contact autoregistration with silicon and forms local aluminium back of the body field.Compare with technologies such as photoetching, laser sintered, laser openings, technical process is simple, is fit to produce in batches.
Battery back of the body surface has only the subregion to be covered by metal, can produce electric energy equally from the light of cell backside incident, so just forms two-sided battery structure, can effectively increase the real work generating efficiency.
Sol-gal process evenly mixes these raw materials under liquid phase for making presoma with the compound that contains high chemism component, and be hydrolyzed, the condensation chemical reaction; In solution, form stable vitreosol system; Colloidal sol is slowly polymerization through between the ageing micelle, forms the gel of three-dimensional space network structure, has been full of the solvent that loses flowability between gel network; Form gel, gel is prepared the material of molecule and even nanometer substructure through super-dry, sintering curing.
Plasma enhanced chemical vapor deposition method (PECVD): plasma enhanced chemical vapor deposition (PECVD) technology is to make by means of glow discharge plasma to contain the gaseous material generation chemical reaction that film is formed, thereby realizes a kind of new technology of preparing of thin-film material growth.
Sputtering method: the characteristics that have certain kinetic energy after utilizing charged ion in electric field, to quicken; Ion is guided into the target of being processed by the goods and materials of sputter; In the ion of incident and the target surface atomic collision process latter is sputtered out; The atom that is sputtered out will sink to the bottom along certain direction directive, thereby realizes the deposition of material, forms the film of sputtering method preparation.
Atomic layer deposition method (ALD): be a kind of can be with material with the monatomic form membrane method that is plated in substrate surface in layer.Ald and common chemical deposition have similarity.But in atomic layer deposition process, the chemical reaction of new one deck atomic film is that directly preceding with it one deck is associated, and this mode makes each reaction only deposit one deck atom.
The equipment that the present invention uses is compatible mutually with traditional solar cell apparatus, need not increase equipment, and the technology cost is lower, and production capacity is bigger, has extraordinary industrial prospect.
The invention has the advantages that: can reduce the recombination rate on back of the body surface greatly, improve back reflection, increase the collection of photo-generated carrier.Compare with technologies such as photoetching, laser sintered, laser openings, technical process is simple, is fit to produce in batches.Can effectively increase the real work generating efficiency.The equipment that the present invention uses is compatible mutually with traditional solar cell apparatus, need not increase equipment, and the technology cost is lower, and production capacity is bigger, has extraordinary industrial prospect.
Description of drawings
Fig. 1 is the back side silk screen printing figure after the present invention forms.
Label among the figure is expressed as respectively: 1, back side main grid; 2, thin grid line.
Embodiment
Embodiment one
As shown in Figure 1.Realize that step of the present invention can be followed successively by preceding cleaning, making herbs into wool → diffusion system PN junction → periphery and the positive SiNx antireflective film of back-etching → vapor deposition → vapor deposition back side Al
2O
3Passivating film is or/and SiNx passivating film or other passivating films → silk screen printing back electrode → silk screen printing positive electrode → sintering.
That is, a kind of production method of passivating back double-side solar cell,
In general comprise the steps;
Step 1: silicon chip is carried out preceding the cleaning and making herbs into wool; The preceding affected layer that cleans to remove silicon chip surface is as the criterion, and processes matte at the battery front surface simultaneously;
Step 2: with above-mentioned silicon chip as silicon substrate deposit doped source and spread the preparation p-n junction;
Step 3: the back is cleaned, and is as the criterion to remove back of the body knot, periphery and phosphorosilicate glass;
Step 4: vapor deposition antireflective film in the front of silicon chip;
Step 5: form backside passivation layer in silicon chip back, backside passivation layer adopt silicide as passivation layer or adopt compatible mutually with the silicon chip treatment process and and silicon chip surface form good passive behavior material as passivation layer;
Step 6: adopt the local method for printing screen to form grid line in silicon chip back; Sintering realization office aluminium is carried on the back the field then; Good contact to the realize grid line and silicon chip is as the criterion, and said grid line comprises the back side main grid and thin grid line that axis is orthogonal and contact, and thin grid line is the silver-colored aluminium paste grid line of high-penetrability;
Step 7: adopt the method for conventional silk screen printing, make front electrode at battery front side;
Step 8: the annealing of sintering fire is so that form good Ohmic contact;
Step 9: test, sorting.
Doped source in the step 2 is compound or the mixture that contains phosphorus dopant; Its deposition process is spraying or printing or gas source diffusion.
In step 5, when the number of plies of backside passivation layer is 1 layer:
Backside passivation layer is alundum (Al passivation layer silicon dioxide passivation layer or silicon carbide passivation layer or amorphous silicon passivation layer;
When backside passivation layer is the number of plies when being 2 laminated construction:
The nexine of backside passivation layer is alundum (Al passivation layer or silicon dioxide passivation layer, outerly is silicon nitride;
Perhaps the nexine of backside passivation layer is that silicon carbide passivation layer, skin are silicon nitride passivation;
Perhaps the nexine of backside passivation layer is amorphous silicon passivation layer, silicon nitride passivation;
Wherein nexine is between the silicon chip back side and skin.
Adopt said structure can greatly reduce back of the body recombination-rate surface, improve infrared light back reflection rate as passivation layer.
In step 5, the formation method of backside passivation layer is plasma enhanced chemical vapor deposition method (PECVD) or sputtering method or sol-gal process or atomic layer deposition method (ALD).
In step 6, if behind the first printed back main grid during the thin grid line of printing, back side main grid is a non-penetrative silver slurry grid line; When if the printed back main grid carries out with the thin grid line of printing simultaneously, back side main grid is a penetrability silver aluminium paste grid line.
In step 4, said antireflective film adopt silicon nitride film or adopt big refractive index and compatible mutually with silicon treatment process, with silicon the materials A of good interface characteristic is arranged.
Materials A is the dielectric material of visible transparent.
Materials A is TiO
2Material or Al
2O
3Material or SiN
xC
yMaterial or SiN
xO
yMaterial.
It is characterized in that: said silicon chip is a P type silicon chip.
In step 3, the method for back of the body knot and periphery of removing is removed back of the body knot and periphery for the mixed solution that adopts nitric acid, hydrofluoric acid and water, removes the method for phosphorosilicate glass and removes phosphorosilicate glass for the mixed solution that adopts hydrochloric acid, hydrofluoric acid and water.
For reducing the compound speed of photo-generated carrier, clean and making herbs into wool before need carrying out silicon chip, remove the affected layer of silicon chip surface, simultaneously in order to reduce reflectivity, need process matte at the battery front surface.
During general concrete operations, generally earlier P type silicon chip surface is carried out preceding cleaning, remove surface damage layer, form the anti-reflection suede structure simultaneously with chemical solution; The general thickness of removing surface damage layer is 3 ~ 5um.
Then P type silicon chip is put in the diffusion furnace tube, adopted the diffusion of POCl3 liquid source, form p-n junction, its diffusion side's resistance is 30 ~ 120 ohm;
Adopt the mixed solution of nitric acid, hydrofluoric acid and water to remove back of the body knot and periphery again, adopt the mixed solution of hydrochloric acid, hydrofluoric acid and water to remove phosphorosilicate glass and metal ion;
In the front of battery, PECVD prepares double-deck silicon nitride antireflective coating;
At the back side of battery, ALD prepares di-aluminium trioxide film, and thickness is 30nm; The thickness of general di-aluminium trioxide film reaches 30nm and gets final product.
Adopt the local method for printing screen to form grid line in silicon chip back then, the thin grid line of printing behind the first printed back main grid, back side main grid adopt non-penetrative silver slurry printing formation non-penetrative silver slurry grid line, prepare backplate with this; The bar number of grid line is 72, and the width of general thin grid line is 80 μ m, and metallization area accounts for backside area 4%; Thin grid line employing penetrability silver aluminium paste printing formation penetrability silver aluminium paste grid line forms local aluminium back of the body field with this.
In said method, carry out regionality printing, the battery back of the body surface after therefore forming has only the subregion to be covered by metal, can produce electric energy equally from the light of cell backside incident, so just forms two-sided battery structure, can effectively increase the real work generating efficiency.The silver-colored aluminium paste of silk screen printing high-penetrability on the passivation layer overleaf simultaneously forms the self aligned local aluminium back of the body, the ohmic contact that can realize.
Silk screen printing front electrode then; Sintering is to form good Ohmic contact;
Test at last and sorting.
In the present invention.Compare conventional solar cell production technology, solar cell production technology of the present invention has increased backside passivation layer, can reduce the recombination rate on back of the body surface greatly, improves back reflection, increases the collection of photo-generated carrier.
Silk screen printing of the present invention has corrosive silver-colored aluminium paste on backside passivation layer, and the silver aluminium paste penetrates passivation layer and reacts carrying on the back the surface during sintering, contact autoregistration with silicon and forms local aluminium back of the body field.Compare with technologies such as photoetching, laser sintered, laser openings, technical process is simple, is fit to produce in batches.
Battery back of the body surface has only the subregion to be covered by metal, can produce electric energy equally from the light of cell backside incident, so just forms two-sided battery structure, can effectively increase the real work generating efficiency.
The equipment that the present invention uses is compatible mutually with traditional solar cell apparatus, need not increase equipment, and the technology cost is lower, and production capacity is bigger, has extraordinary industrial prospect.
The difference of present embodiment and embodiment 1 is: with chemical solution the P silicon chip is cleaned and making herbs into wool earlier, remove affected layer, form the texturing antireflection structure; In diffusion furnace tube, adopt the diffusion of POCl3 liquid source, form the P-N knot; Adopt the chemical solution cleans back of the body knot and the periphery of acid or alkali, adopt the mixed solution of hydrochloric acid, hydrofluoric acid and water to clean phosphorosilicate glass; In the front of battery, PECVD prepares the silicon nitride film antireflective coating; At the back side of battery, PECVD prepares alundum (Al/silicon nitride stack passivating film;
Carry out the silk screen printing grid line then, comprise back side main grid and thin grid line, the printed back main grid carries out with the thin grid line of printing simultaneously, and back side main grid all adopts penetrability silver aluminium paste printing formation penetrability silver aluminium paste grid line with the thin grid line of printing; Metallization area accounts for the gross area 7%;
Last silk screen printing front electrode; Sintering is to form good Ohmic contact; Test, sorting.
The present invention adopts the silver-colored aluminium paste that can penetrate backside passivation layer to carry out silk screen printing to carrying on the back the surface, forms back side grid line structure, forms local aluminium back of the body field at the grid line contact area behind the sintering, realizes low electrode contact resistance, has the effect of grid line being carried out passivation simultaneously.During solar cell work, the photogenerated current that battery produces is pooled to thin grid line, further compiles back side main grid again.
Based on above-mentioned two kinds of methods, realize that step of the present invention can be followed successively by preceding cleaning, making herbs into wool → diffusion system PN junction → periphery and the positive SiNx antireflective film of back-etching → vapor deposition → vapor deposition back side Al
2O
3Or/and SiNx passivating film → silk screen printing back electrode → silk screen printing positive electrode → sintering.
As stated, then can well realize the present invention.
Alundum (Al or silicon dioxide passivation layer or silicon carbide passivation layer or amorphous silicon passivation layer
Here can use following dual mode to describe:
（1）
The nexine of backside passivation layer is alundum (Al passivation layer or silicon dioxide passivation layer or carborundum or amorphous silicon, outerly is silicon nitride;
（2）
The nexine of backside passivation layer is that alundum (Al passivation layer, skin are silicon nitride;
The nexine of backside passivation layer is that silicon dioxide passivation layer, skin are silicon nitride;
The nexine of backside passivation layer is that silicon carbide passivation layer, skin are silicon nitride;
The nexine of backside passivation layer is that amorphous silicon passivation layer, skin are silicon nitride;
Claims (10)
1. the production method of a passivating back double-side solar cell is characterized in that: comprise the steps;
Step 1: silicon chip is carried out preceding the cleaning and making herbs into wool; The preceding affected layer that cleans to remove silicon chip surface is as the criterion, and processes matte at the battery front surface simultaneously;
Step 2: with above-mentioned silicon chip as silicon substrate deposit doped source and spread the preparation p-n junction;
Step 3: the back is cleaned, and is as the criterion to remove back of the body knot, periphery and phosphorosilicate glass;
Step 4: vapor deposition antireflective film in the front of silicon chip;
Step 5: form backside passivation layer in silicon chip back, backside passivation layer adopt silicide as passivation layer or adopt compatible mutually with the silicon chip treatment process and and silicon chip surface form good passive behavior material as passivation layer;
Step 6: adopt the local method for printing screen to form grid line in silicon chip back; Sintering realization office aluminium is carried on the back the field then; Good contact to the realize grid line and silicon chip is as the criterion, and said grid line comprises the back side main grid and thin grid line that axis is orthogonal and contact, and thin grid line is the silver-colored aluminium paste grid line of high-penetrability;
Step 7: adopt the method for conventional silk screen printing, make front electrode at battery front side;
Step 8: the annealing of sintering fire is so that form good Ohmic contact;
Step 9: test, sorting.
2. the production method of a kind of passivating back double-side solar cell according to claim 1 is characterized in that: the doped source in the step 2 is compound or the mixture that contains phosphorus dopant; Its deposition process is spraying or printing or gas source diffusion.
3. the production method of a kind of passivating back double-side solar cell according to claim 1 is characterized in that:
In step 5, when the number of plies of backside passivation layer is 1 layer:
Backside passivation layer is alundum (Al passivation layer or silicon dioxide passivation layer or silicon carbide passivation layer or amorphous silicon passivation layer;
When backside passivation layer is the number of plies when being 2 laminated construction:
The nexine of backside passivation layer is alundum (Al passivation layer or silicon dioxide passivation layer or carborundum or amorphous silicon passivation layer, and skin is a silicon nitride passivation;
Wherein nexine is between the silicon chip back side and skin.
4. the production method of a kind of passivating back double-side solar cell according to claim 1; It is characterized in that: in step 5, the formation method of backside passivation layer is plasma enhanced chemical vapor deposition method (PECVD) or sputtering method or sol-gal process or atomic layer deposition method (ALD).
5. the production method of a kind of passivating back double-side solar cell according to claim 1 is characterized in that: in step 6, if behind the first printed back main grid during the thin grid line of printing, back side main grid is a non-penetrative silver slurry grid line; When if the printed back main grid carries out with the thin grid line of printing simultaneously, back side main grid is a penetrability silver aluminium paste grid line.
6. the production method of a kind of passivating back double-side solar cell according to claim 1; It is characterized in that: in step 4, said antireflective film adopt silicon nitride film or adopt big refractive index and compatible mutually with silicon treatment process, with silicon the materials A of good interface characteristic is arranged.
7. the production method of a kind of passivating back double-side solar cell according to claim 6 is characterized in that: materials A is the dielectric material of visible transparent.
8. the production method of a kind of passivating back double-side solar cell according to claim 6 is characterized in that: materials A is TiO
2Material or Al
2O
3Material or SiN
xC
yMaterial or SiN
xO
yMaterial.
9. according to the production method of any described a kind of passivating back double-side solar cell among the claim 1-8, it is characterized in that: said silicon chip is a P type silicon chip.
10. according to the production method of any described a kind of passivating back double-side solar cell among the claim 1-8; It is characterized in that: in step 3; The method of back of the body knot and periphery of removing is removed back of the body knot and periphery for the mixed solution that adopts nitric acid, hydrofluoric acid and water, removes the method for phosphorosilicate glass and removes phosphorosilicate glass for the mixed solution that adopts hydrochloric acid, hydrofluoric acid and water.
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