CN103066158A - Back electric field area contact crystalline silicon solar battery preparation method - Google Patents
Back electric field area contact crystalline silicon solar battery preparation method Download PDFInfo
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- CN103066158A CN103066158A CN2013100091932A CN201310009193A CN103066158A CN 103066158 A CN103066158 A CN 103066158A CN 2013100091932 A CN2013100091932 A CN 2013100091932A CN 201310009193 A CN201310009193 A CN 201310009193A CN 103066158 A CN103066158 A CN 103066158A
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Abstract
The invention discloses a back electric field area contact crystalline silicon solar battery preparation method. The back electric field area contact crystalline silicon solar battery preparation method comprises the following steps, phosphorus diffusion is conducted on a silicon chip to form a PN junction, edges and back junctions of the silicon chip are removed, and the front side of the silicon chip is plated with antireflection coating. The Back electric field area contact crystalline silicon solar battery preparation method is characterized by further comprising the following steps: (1) the back surface of the silicon chip is plated with a passivation layer; (2) two kinds of sizing agents are printed on the back surface of the silicon chip, one sizing agent is used for achieving local ohmic contact on the back side, and the other sizing agent is used for electric field sizing agent on back side; (3) front surface electrodes, back surface electrodes and back surface electric field of a silk screen printing silicon chip are sintered and form ohmic contact. By printing the two kinds of sizing agents on the back surface of the silicon chip, the back electric field area contact crystalline silicon solar battery preparation method has the advantages that the device is stable, the maintenance is convenient, the price is low, and the application in industrial production is wide. Compared with the photolithography method, the sintering method, the methods of removing a dielectric layer by corroding the sizing agent and by a laser, the back electric field area contact crystalline silicon solar battery preparation method has the advantages that time and cost are saved, and the process flow of the overall production process is short.
Description
Technical field
The present invention relates to a kind of preparation method who carries on the back the electric field region contact crystalline silicon solar cell.
Background technology
Back of the body electric field region contact crystalline silicon solar cell structure is made very complicated, loaded down with trivial details in laboratory process, production cost is very high, up to this point, not yet is applied in the large-scale commercial applications production in the world wide.Realize carrying on the back the contact of surface passivation zone, what take in the laboratory process is that photoetching method or laser burn the method for melting.Wherein the lithography process process is complicated, and cost is high, generally is used for semicon industry; Laser burns the method melt and laser and back surface field is required very high, and practical large-scale may cause rate of finished products low in producing, and laser burns to melt and forms back of the body Surface Contact step in the end, and the battery previous process is had requirement, causes previous process complicated, and production cost is high.Industrialization volume production aspect has and carries out the technology that corrosive slurry and laser removes part back side dielectric layer and propose, and is at present enterprise's laboratory stage, and having problems is apparatus expensive, and it is bad to remove thicker dielectric layer technology stability.At present, the preparation method who provides a kind of and be suitable for large-scale production, has the back of the body electric field region contact crystalline silicon solar cell of lower cost and higher conversion efficiency is the pursuit of the art.
Summary of the invention
Goal of the invention: the present invention is directed to the deficiencies in the prior art, provide a kind of and be suitable for large-scale production, have the preparation method of the back of the body electric field region contact crystalline silicon solar cell of lower cost and higher conversion efficiency.
Technical scheme: the inventive method has increased the step of battery back of the body surface being carried out passivation step and two kinds of slurries of printing on conventional crystal-silicon solar cell preparation technology's basis, realize the higher back of the body electric field region contact crystalline silicon solar cell of preparation efficiency.
The present invention carries on the back the preparation method of electric field region contact crystalline silicon solar cell, comprises silicon chip phosphorus is diffuseed to form PN junction, removes silicon chip edge and back of the body knot, front side of silicon wafer is plated antireflective film; It is characterized in that, also comprise the steps:
(1) to silicon chip back of the body plated surface passivation layer;
(2) at two kinds of slurries of silicon chip back of the body surface printing, a kind of for realizing the slurry of the local ohmic contact in the back side, a kind of for realizing the back surface field slurry;
(3) silk screen printing front side of silicon wafer electrode, backplate, back surface field, sintering forms ohmic contact.
Of the present invention to silicon chip back of the body plated surface passivation layer, be plating individual layer passivation layer or multilayer passivation layer.Described passivation layer is silicon oxide film, silicon nitride film or aluminum oxide film.
Front side of silicon wafer plating antireflective film be in silicon nitride film, silicon oxide film or the aluminum oxide film any one or more layers, back of the body surface passivation layer is silicon oxide film, silicon nitride film or aluminum oxide film, its effect is, play good passivation for battery back of the body surface, can improve the cell backside internal reflection, so that back of the body recombination-rate surface reduces greatly, increase effective utilization of long-wave band light.
The way of contact of back of the body electric field region contact of the present invention is for being applicable to the low-cost high-efficiency industrialization production way of contact, the preferred linear way of contact or the some way of contact.In the described linear way of contact, contact wire is straight line or curve, and contact wire is continuous lines or discontinuity curve in silicon chip, and the angle of line and silicon chip is 0～90 °.In the described some way of contact, contact point is arranged for the matrix of point, is triangle, square or diamond array mode.
The present invention compared with prior art, its beneficial effect is:
1, the present invention's present general industry electrochemical cell that compares, carried out the Passivation Treatment on back of the body surface, can significantly reduce the recombination rate on back of the body surface, so that open circuit voltage and short circuit current get a promotion, by suitable back of the body surfacial pattern design, can satisfy the ohmic contact of back of the body electric field and crystalline silicon substrate, satisfy again simultaneously back surface field and collect the requirement of photo-generated carrier, obtain the series resistance consistent with common batteries, fill factor, curve factor meets the demands, thereby final so that cell photoelectric conversion efficiency is effectively improved;
2, the present invention is by carrying on the back two kinds of slurries of surface printing at silicon chip, and the mode of printing slurry is the method for present suitability for industrialized production crystal silicon solar energy battery, and equipment is stable, and easy to maintenance, price is low; Ripe on the technique, controllability is good, process stabilizing, and output is large, can use in suitability for industrialized production on a large scale.This method, than photoetching process and laser sintering processes, the method for corrosive slurry and laser ablation dielectric layer can be saved time and cost, and the process flow of whole production process is shorter.
Description of drawings
Fig. 1 is the back of the body electric field region contact crystalline silicon solar cell structural representation of the inventive method preparation.
Among the figure, 1 is SiNx; 2 is SiO
23 is SiNx; 4 is SiO
2Perhaps aluminium oxide; 5 for penetrating slurry; 6 is the back surface field slurry.
Embodiment
The below is elaborated to technical solution of the present invention, but protection scope of the present invention is not limited to described embodiment.
Embodiment:The present invention carries on the back the preparation method of electric field region contact crystalline silicon solar cell, its structural representation as shown in Figure 1, silicon nitride film and silicon oxide film (or aluminum oxide film) are adopted in the passivation of silicon chip back of the body plated surface, then at two kinds of slurries of silicon chip back of the body surface printing, screen printing sizing agent forms the local ohmic contact in the back side, and then carry out screen printing sizing agent and prepare back surface field, the concrete technology engineering is as follows:
1, silicon chip chemical cleaning, chemical corrosion method prepares suede structure, spreads front cleaning;
2, silicon chip is carried out the phosphorus diffusion, form PN junction;
3, remove edge and the back of the body knot of silicon chip.For the mode that back of the body surface passivation contacts with back of the body electric field region, the back of the body that diffuses to form knot needs to remove;
4, to front side of silicon wafer plating antireflective film, adopt the plasma-enhanced deposit of PECVD() or the PVD(physical vapour deposition (PVD)) cvd nitride silicon thin film and silicon oxide film realize;
5, passivation layer is plated on silicon chip back of the body surface, adopts PECVD, APCVD(Films Prepared by APCVD), PVD or ALD(ald) mode plate passivation layer---silicon nitride film and silicon oxide film (or aluminum oxide film);
6, on the passivation layer on silicon chip back of the body surface respectively printing can behind sintering, penetrate dielectric layer and form penetrating slurry and realizing the back surface field slurry of back surface field of local ohmic contact, penetrating slurry is aluminium paste or silver-colored aluminium paste, penetrate the silicon chip back side dielectric layer by sintering process, form ohmic contact with substrate silicon and aluminium back surface field; , the back surface field slurry is aluminium paste, forms the local contact of back of the body electric field on silicon chip back of the body surface.Utilize printing slurry to carry on the back the local contact of surface passivation layer, technical maturity, controllability is good, process stabilizing, output is large, can use in the large-scale commercial applications production;
7, silk screen printing front side of silicon wafer electrode, backplate, back surface field, sintering forms ohmic contact;
8, test stepping.
As mentioned above, although the specific preferred embodiment of reference has represented and has explained the present invention that it shall not be construed as the restriction to the present invention self.Under the spirit and scope of the present invention prerequisite that does not break away from the claims definition, can make in the form and details various variations to it.
Claims (9)
1. a preparation method who carries on the back the electric field region contact crystalline silicon solar cell comprises silicon chip phosphorus is diffuseed to form PN junction, removes silicon chip edge and back of the body knot, front side of silicon wafer is plated antireflective film; It is characterized in that, also comprise the steps:
(1) to silicon chip back of the body plated surface passivation layer;
(2) at two kinds of slurries of silicon chip back of the body surface printing, a kind of for realizing the slurry that penetrates of the local ohmic contact in the back side, a kind of for realizing the back surface field slurry of back surface field;
(3) silk screen printing front side of silicon wafer electrode, backplate, back surface field, sintering forms ohmic contact.
2. the preparation method of described back of the body electric field region contact crystalline silicon solar cell according to claim 1, it is characterized in that: the described slurry that penetrates is aluminium paste or silver-colored aluminium paste, penetrates the silicon chip back side dielectric layer by sintering process, forms ohmic contact with substrate silicon and aluminium back surface field.
3. the preparation method of described back of the body electric field region contact crystalline silicon solar cell according to claim 1, it is characterized in that: described back surface field slurry is aluminium paste.
4. the preparation method of described back of the body electric field region contact crystalline silicon solar cell according to claim 1 is characterized in that: described to silicon chip back of the body plated surface passivation layer, and be plating individual layer passivation layer or multilayer passivation layer.
5. the preparation method of described back of the body electric field region contact crystalline silicon solar cell according to claim 4, it is characterized in that: described passivation layer is silicon oxide film, silicon nitride film or aluminum oxide film.
6. the preparation method of described back of the body electric field region contact crystalline silicon solar cell according to claim 1 is characterized in that: described to front side of silicon wafer plating antireflective film, in silicon nitride film, silicon oxide film or the aluminum oxide film any one or more layers.
7. the preparation method of described back of the body electric field region contact crystalline silicon solar cell according to claim 1, it is characterized in that: described back of the body electric field region contact, its way of contact are the linear way of contact or the some way of contact.
8. the preparation method of described back of the body electric field region contact crystalline silicon solar cell according to claim 7, it is characterized in that: in the described linear way of contact, contact wire is straight line or curve, and contact wire is continuous lines or discontinuity curve in silicon chip, and the angle of line and silicon chip is 0～90 °.
9. the preparation method of described back of the body electric field region contact crystalline silicon solar cell according to claim 7, it is characterized in that: in the described some way of contact, contact point is arranged for the matrix of point, is triangle, square or diamond array mode.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916690A (en) * | 2014-03-14 | 2015-09-16 | 株式会社东芝 | Semiconductor device |
| CN106356413A (en) * | 2016-09-06 | 2017-01-25 | 浙江晶科能源有限公司 | Thin crystalline silicon cell and preparation method thereof |
| CN108122997A (en) * | 2018-02-05 | 2018-06-05 | 通威太阳能（安徽）有限公司 | A kind of PERC battery structures with anti-PID performances and preparation method thereof |
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| CN101533875A (en) * | 2009-04-23 | 2009-09-16 | 中山大学 | Preparation method of back-contact electrode structure of crystal silicon solar cell |
| KR20100128727A (en) * | 2009-05-29 | 2010-12-08 | 주식회사 효성 | A fabricating method of solar cell using ferroelectric material |
| CN102496661A (en) * | 2011-12-31 | 2012-06-13 | 中电电气（南京）光伏有限公司 | Preparation method of back electric field contact crystalline silica solar cell |
| CN102800745A (en) * | 2012-07-04 | 2012-11-28 | 天威新能源控股有限公司 | Method for producing rear passivation double-sided solar cell |
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- 2013-01-10 CN CN2013100091932A patent/CN103066158A/en active Pending
Patent Citations (5)
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| CN101241952A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Solar battery slice technology for efficient and low-cost film crystal silicon |
| CN101533875A (en) * | 2009-04-23 | 2009-09-16 | 中山大学 | Preparation method of back-contact electrode structure of crystal silicon solar cell |
| KR20100128727A (en) * | 2009-05-29 | 2010-12-08 | 주식회사 효성 | A fabricating method of solar cell using ferroelectric material |
| CN102496661A (en) * | 2011-12-31 | 2012-06-13 | 中电电气（南京）光伏有限公司 | Preparation method of back electric field contact crystalline silica solar cell |
| CN102800745A (en) * | 2012-07-04 | 2012-11-28 | 天威新能源控股有限公司 | Method for producing rear passivation double-sided solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104916690A (en) * | 2014-03-14 | 2015-09-16 | 株式会社东芝 | Semiconductor device |
| CN106356413A (en) * | 2016-09-06 | 2017-01-25 | 浙江晶科能源有限公司 | Thin crystalline silicon cell and preparation method thereof |
| CN108122997A (en) * | 2018-02-05 | 2018-06-05 | 通威太阳能（安徽）有限公司 | A kind of PERC battery structures with anti-PID performances and preparation method thereof |
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Application publication date: 20130424 |