CN202585429U - Back point contact silicon solar cell - Google Patents
Back point contact silicon solar cell Download PDFInfo
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- CN202585429U CN202585429U CN 201120554486 CN201120554486U CN202585429U CN 202585429 U CN202585429 U CN 202585429U CN 201120554486 CN201120554486 CN 201120554486 CN 201120554486 U CN201120554486 U CN 201120554486U CN 202585429 U CN202585429 U CN 202585429U
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- silicon
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- point contact
- back side
- solar battery
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Abstract
The utility model discloses a back point contact silicon solar cell, wherein a P-type silicon wafer, namely a silicon substrate, is adopted as the base region of the solar cell. The front surface of the silicon substrate is sequentially provided with an emitter and a front-surface silicon nitride layer arranged inside out, while the back surface of the silicon substrate is sequentially provided with a passivation layer, silver points and a back aluminum layer arranged inside out. The silver paste is printed on the surface of the passivation layer so as to form the silver points. According to the back point contact silicon solar cell, the passivation layer on the back surface of the silicon substrate is corroded by the silver points during the high-temperature rapid sintering process, while ideal ohmic contacts are formed between the corroded parts of the passivation layer and the silicon wafer. Due the formation of the above point contact structure, the recombination rate of electron-hole pairs is lowered, and the minority carrier lifetime is prolonged. Meanwhile, the photoelectric conversion efficiency is also improved. The back point contact silicon solar cell has the advantages of simple process, low equipment investment and high production efficiency, and is suitable for industrial large-scale production.
Description
Technical field
The utility model relates to technical field of solar cells, particularly a kind of back side point contact crystal silicon solar battery.
Background technology
Solar cell is that a kind of photovoltaic effect of utilizing becomes the device of electric energy to transform light energy, and in this photoelectric conversion process, loss is mainly: optical loss and electrical loss.Optical loss is mainly from the reflection loss of front surface and the more weak reflection in surface, back, electrical loss mainly from the electronics of photon excitation, hole to compound, front surface, emitter and surface, back are that main electronics, hole are to recombination region.At present; Crystal silicon solar battery generally adopts the emitter or the selective emitting electrode structure of high square resistance; And the front surface of solar cell is provided with the good silicon nitride layer of passivation effect, and these The Application of Technology have reduced front surface electronics, hole-recombination speed, have reduced the electrical loss in this district.And back of the body surface is provided with the aluminium back of the body, and the passivation of the aluminium back of the body is (to be PP through form the height knot at the silicon chip back side
+Structure).The electric field strength of height knot is relevant with the alusil alloy thickness of formation, and is general, thick more alusil alloy layer, and then electric field strength is strong more, and the ability of its bounce-back electronics is strong more, and passivation effect is then good more.Yet present silicon chip is thinner, is generally 180um, and thick aluminium lamination will produce bigger stress guide overleaf and send a telegraph the bigger bending of pond sheet, will increase module encapsulation difficulty and fragment rate.In addition, aluminium is lower in the solid solubility of silicon, and this causes being difficult to form highfield, and a large amount of electronics, hole have reduced the photoelectric conversion efficiency of solar cell to compound in the aluminium silicon contact position and the back side.
Therefore, in an aluminium back of the body crystal silicon solar battery of routine, because the passivation effect of aluminium back of the body field is relatively poor, bigger back of the body recombination-rate surface, this is a key factor of the conventional crystal silicon solar battery opto-electronic conversion of restriction.
Summary of the invention
The utility model embodiment technical problem to be solved is; A kind of back side point contact crystal silicon solar battery is provided; Point contact-the structure of its formation has reduced back of the body surface electronic, the right recombination rate in hole; Improved minority carrier life time, improved photoelectric conversion efficiency, and technology is simple, equipment investment is few, production efficiency is high, be applicable to large-scale industrialization production.
For reaching above-mentioned technique effect, the utility model embodiment provides a kind of back side point contact crystal silicon solar battery, and it is the base of silicon substrate as said solar cell that said solar cell adopts P type silicon chip;
The front surface of said silicon substrate is provided with emitter and front surface silicon nitride layer from the inside to the outside successively;
The back of the body surface of said silicon substrate is provided with passivation layer and silver point from the inside to the outside successively;
The point of said silver point for forming through the printed silver slurry in said passivation layer surface.
As the improvement of such scheme, the point of said silver point for forming through silk screen printing silver slurry in said passivation layer surface.
As the improvement of such scheme, the spacing of said silver point is 300 ~ 2500um.
As the improvement of such scheme, said silver point is a round dot;
The diameter of said silver point is 40 ~ 80um, highly is 8 ~ 40um.
As the improvement of such scheme, said passivation layer is silicon nitride passive film or silicon nitride and silicon dioxide dual layer passivation film.
As the improvement of such scheme, the refractive index of said silicon nitride passive film is 2.0 ~ 2.5, and thickness is 40 ~ 120nm;
In said silicon nitride and the silicon dioxide dual layer passivation film, the thickness of said silicon nitride passive film is 40 ~ 120nm, and the thickness of said silicon dioxide passivating film is 70 ~ 150nm.
As the improvement of such scheme, said emission is N type emitter very.
As the improvement of such scheme, the back of the body surface of said silicon substrate is provided with aluminium lamination.
As the improvement of such scheme, the front surface of said silicon substrate is provided with positive silver layer; Said positive silver layer is provided with positive galactic pole.
Enforcement the utlity model has following beneficial effect:
A kind of back side point contact of the utility model crystal silicon solar battery is provided with the dielectric of silicon nitride film at P type silicon chip surface, and perhaps silicon dioxide and silicon nitride duplicature form passivation layer.And have corrosive silver slurry through printing in passivation layer surface, preferably, have corrosive silver slurry through silk screen printing, and republish aluminium paste at the oven dry back side in passivation layer surface.Through high temperature rapid firing, silver is starched burn into ablation passivation layer, and runs through passivation layer, forms silver-colored contact point in surface of silicon at last, connects silicon substrate and aluminium backing layer again, thereby realizes backside point contact structures.Have the solar cell of backside point contact structures, passivation ability is strong, effectively reduces right compound of back side electronics, hole, thereby reduces electrical loss, and then improve photoelectric conversion efficiency.
In addition, the preparation technology of a kind of back side point contact of the utility model crystal silicon solar battery is simple, equipment investment is few, production efficiency is high, be applicable to industrial and large-scale production.
Description of drawings
Fig. 1 is the structural representation of a kind of back side point contact of the utility model crystal silicon solar battery;
Fig. 2 is the another structural representation of a kind of back side point contact of the utility model crystal silicon solar battery.
Embodiment
For the purpose, technical scheme and the advantage that make the utility model is clearer, will combine accompanying drawing that the utility model is done to describe in detail further below.
As shown in Figure 1, the utility model embodiment provides a kind of back side point contact crystal silicon solar battery 1, and it is the base of silicon substrate 11 as said solar cell that said solar cell 1 adopts P type silicon chip;
The front surface of said silicon substrate 11 is provided with emitter 12 and front surface silicon nitride layer 13 from the inside to the outside successively;
The back of the body surface of said silicon substrate 11 is provided with passivation layer 14 and silver point 15 from the inside to the outside successively;
The point of said silver point 15 for forming through the printed silver slurry on said passivation layer 14 surfaces.
Preferably, the point of said silver point 15 for forming through silk screen printing silver slurry on said passivation layer 14 surfaces.
The spacing of said silver point 15 is 300 ~ 2500um.
Preferably, the spacing of said silver point 15 is 500 ~ 2000um.
Need to prove, said silver point 15 can for but be not limited to initial point, square point, polygon form point or irregular point.
Preferably, said silver point 15 is a round dot;
The diameter of said silver point 15 is 40 ~ 80um, highly is 8 ~ 40um.
More preferably, the diameter of said silver point 15 is 40 ~ 60um, highly is 15 ~ 30um.
Said passivation layer 14 is silicon nitride passive film or silicon nitride and silicon dioxide dual layer passivation film.
Need to prove that passivation layer 14 shown in Figure 1 is the silicon nitride passive film of individual layer.
Said emitter 12 is a N type emitter.
The back of the body surface of said silicon substrate 11 also can be provided with aluminium lamination 16.
The front surface of said silicon substrate 11 also can be provided with positive silver layer 17; Said positive silver layer 17 is provided with positive galactic pole 18.
The utility model is to adopt following technical solution: use method for printing screen, and on the non-expansion face silicon chip of carrying out silicon nitride or silicon nitride and silicon dioxide bilayer film passivation layer, the silver slurry of printing ability silicon nitride film; Through low temperature (150 ℃-250 ℃) oven dry; Printing back of the body aluminium and just silver then, through high temperature rapid firing, the silver of printing slurry corroding silicon nitride and silicon chip; Form good Ohmic contact at the silicon chip back surface layer, form backside point contact structures.Have the solar cell of backside point contact structures, passivation ability is strong, effectively reduces right compound of back side electronics, hole, thereby reduces electrical loss, and then improve photoelectric conversion efficiency.
As shown in Figure 2, the utility model embodiment provides another back side point contact crystal silicon solar battery 2, and it is the base of silicon substrate 21 as said solar cell that said solar cell 2 adopts P type silicon chip;
The front surface of said silicon substrate 21 is provided with emitter 22 and front surface silicon nitride layer 23 from the inside to the outside successively;
The back of the body surface of said silicon substrate 21 is provided with passivation layer 24 and silver point 25 from the inside to the outside successively;
The point of said silver point 25 for forming through the printed silver slurry on said passivation layer 24 surfaces.
Preferably, the point of said silver point 25 for forming through silk screen printing silver slurry on said passivation layer 24 surfaces.
The spacing of said silver point 25 is 300 ~ 2500um.
Preferably, the spacing of said silver point 25 is 500 ~ 2000um.
Need to prove, said silver point 25 can for but be not limited to initial point, square point, polygon form point or irregular point.
Preferably, said silver point 25 is a round dot;
The diameter of said silver point 25 is 40 ~ 80um, highly is 8 ~ 40um.
More preferably, the diameter of said silver point 25 is 40 ~ 60um, highly is 15 ~ 30um.
Need to prove that back side point contact crystal silicon solar battery and difference shown in Figure 1 shown in Figure 2 are that its passivation layer 24 is silicon nitride and silicon dioxide dual layer passivation film.
In said silicon nitride and silicon dioxide dual layer passivation film 24, the refractive index of said silicon nitride passive film 241 is 2.0 ~ 2.5, thickness is 40 ~ 120nm; The thickness of said silicon dioxide passivating film 242 is 70 ~ 150nm.
Preferably, in said silicon nitride and the silicon dioxide dual layer passivation film 24, the refractive index of said silicon nitride passive film 241 is 2.0 ~ 2.3, and thickness is 60 ~ 90nm; The thickness of said silicon dioxide passivating film 242 is 90 ~ 120nm.
Said emitter 22 is a N type emitter.
The back of the body surface of said silicon substrate 21 is provided with aluminium lamination 26.
The front surface of said silicon substrate 22 is provided with positive silver layer 27; Said positive silver layer 27 is provided with positive galactic pole 28.
In sum, implement the utlity model has following beneficial effect:
A kind of back side point contact of the utility model crystal silicon solar battery is provided with the dielectric of silicon nitride film at P type silicon chip surface, and perhaps silicon dioxide and silicon nitride duplicature form passivation layer.And have corrosive silver slurry through printing in passivation layer surface, preferably, have corrosive silver slurry silk screen through silk screen printing in passivation layer surface.Through high temperature rapid firing, silver slurry burn into ablation passivation layer forms silver point in passivation layer surface at last, thereby realizes backside point contact structures again.Have the solar cell of backside point contact structures, passivation ability is strong, effectively reduces right compound of back side electronics, hole, thereby reduces electrical loss, and then improve photoelectric conversion efficiency.
In addition, the preparation technology of a kind of back side point contact of the utility model crystal silicon solar battery is simple, equipment investment is few, production efficiency is high, be applicable to industrial and large-scale production.
The above disclosed preferred embodiment that is merely the utility model can not limit the interest field of the utility model certainly with this, so according to the equivalent variations that the utility model claim is done, still belong to the scope that the utility model is contained.
Claims (9)
1. a back side point contact crystal silicon solar battery is characterized in that it is the base of silicon substrate as said solar cell that said solar cell adopts P type silicon chip;
The front surface of said silicon substrate is provided with emitter and front surface silicon nitride layer from the inside to the outside successively;
The back of the body surface of said silicon substrate is provided with passivation layer and silver point from the inside to the outside successively;
The point of said silver point for forming through the printed silver slurry in said passivation layer surface.
2. back side point contact crystal silicon solar battery as claimed in claim 1 is characterized in that, the point of said silver point for forming through silk screen printing silver slurry in said passivation layer surface.
3. back side point contact crystal silicon solar battery as claimed in claim 2 is characterized in that the spacing of said silver point is 300 ~ 2500um.
4. back side point contact crystal silicon solar battery as claimed in claim 3 is characterized in that said silver point is a round dot;
The diameter of said silver point is 40 ~ 80um, highly is 8 ~ 40um.
5. back side point contact crystal silicon solar battery as claimed in claim 1 is characterized in that said passivation layer is silicon nitride passive film or silicon nitride and silicon dioxide dual layer passivation film.
6. back side point contact crystal silicon solar battery as claimed in claim 5 is characterized in that the refractive index of said silicon nitride passive film is 2.0 ~ 2.5, and thickness is 40 ~ 120nm;
In said silicon nitride and the silicon dioxide dual layer passivation film, the thickness of said silicon nitride passive film is 40 ~ 120nm, and the thickness of said silicon dioxide passivating film is 70 ~ 150nm.
7. back side point contact crystal silicon solar battery as claimed in claim 1 is characterized in that said emission is N type emitter very.
8. back side point contact crystal silicon solar battery as claimed in claim 1 is characterized in that the back of the body surface of said silicon substrate is provided with aluminium lamination.
9. back side point contact crystal silicon solar battery as claimed in claim 1 is characterized in that the front surface of said silicon substrate is provided with positive silver layer;
Said positive silver layer is provided with positive galactic pole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120554486 CN202585429U (en) | 2011-12-27 | 2011-12-27 | Back point contact silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120554486 CN202585429U (en) | 2011-12-27 | 2011-12-27 | Back point contact silicon solar cell |
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| CN202585429U true CN202585429U (en) | 2012-12-05 |
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| CN 201120554486 Expired - Lifetime CN202585429U (en) | 2011-12-27 | 2011-12-27 | Back point contact silicon solar cell |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296099A (en) * | 2013-06-17 | 2013-09-11 | 奥特斯维能源（太仓）有限公司 | Rear surface passivation point contact photovoltaic battery and production method thereof |
| CN104091843A (en) * | 2014-07-17 | 2014-10-08 | 中利腾晖光伏科技有限公司 | Back passivation solar cell and manufacturing method thereof |
| CN104362189A (en) * | 2014-10-30 | 2015-02-18 | 广东爱康太阳能科技有限公司 | Solar cell subjected to back passivation and preparation method thereof |
| CN104576833A (en) * | 2014-12-31 | 2015-04-29 | 江苏顺风光电科技有限公司 | Method adopting PECVD for preparing back passivation film layer of solar back passivation battery |
| CN110073498A (en) * | 2016-11-07 | 2019-07-30 | 信越化学工业株式会社 | The manufacturing method of high photoelectricity conversion efficiency solar battery and high photoelectricity conversion efficiency solar battery |
| CN110310998A (en) * | 2019-06-05 | 2019-10-08 | 国家电投集团西安太阳能电力有限公司 | A kind of electrode structure of back contact battery |
-
2011
- 2011-12-27 CN CN 201120554486 patent/CN202585429U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296099A (en) * | 2013-06-17 | 2013-09-11 | 奥特斯维能源（太仓）有限公司 | Rear surface passivation point contact photovoltaic battery and production method thereof |
| CN104091843A (en) * | 2014-07-17 | 2014-10-08 | 中利腾晖光伏科技有限公司 | Back passivation solar cell and manufacturing method thereof |
| CN104362189A (en) * | 2014-10-30 | 2015-02-18 | 广东爱康太阳能科技有限公司 | Solar cell subjected to back passivation and preparation method thereof |
| CN104362189B (en) * | 2014-10-30 | 2017-03-08 | 广东爱康太阳能科技有限公司 | A kind of passivating back solaode and preparation method thereof |
| CN104576833A (en) * | 2014-12-31 | 2015-04-29 | 江苏顺风光电科技有限公司 | Method adopting PECVD for preparing back passivation film layer of solar back passivation battery |
| CN110073498A (en) * | 2016-11-07 | 2019-07-30 | 信越化学工业株式会社 | The manufacturing method of high photoelectricity conversion efficiency solar battery and high photoelectricity conversion efficiency solar battery |
| CN110310998A (en) * | 2019-06-05 | 2019-10-08 | 国家电投集团西安太阳能电力有限公司 | A kind of electrode structure of back contact battery |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180214 Address after: 322009 Zhejiang city in Jinhua Province town of Yiwu City, Su Fuk Road No. 126 Co-patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121205 |
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| CX01 | Expiry of patent term |