CN103296099A - Rear surface passivation point contact photovoltaic battery and production method thereof - Google Patents
Rear surface passivation point contact photovoltaic battery and production method thereof Download PDFInfo
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- CN103296099A CN103296099A CN2013102389039A CN201310238903A CN103296099A CN 103296099 A CN103296099 A CN 103296099A CN 2013102389039 A CN2013102389039 A CN 2013102389039A CN 201310238903 A CN201310238903 A CN 201310238903A CN 103296099 A CN103296099 A CN 103296099A
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Abstract
The invention discloses a rear surface passivation point contact photovoltaic battery and a production method thereof. Certain gaps are reserved between rear surface electrodes of the battery and rear surface fields of the battery so that during battery piece series welding, expansion and contraction of the rear surface electrodes can be achieved after the rear surface electrodes are heated, the rear surface electrodes are prevented from extruding a passivation layer, further cracks are avoided, and series welding debris rate is greatly reduced.
Description
Technical field
The present invention relates to a kind of back of the body annealing point contact photovoltaic cell and preparation method thereof, belong to the photovoltaic cell field.
Background technology
Under the background that energy shortage, problem of environmental pollution become increasingly conspicuous, Renewable Energy Development has become the key subjects in the whole world, and utilizing solar energy then is an emphasis direction of Renewable Energy Development.
Modernization solar cell suitability for industrialized production develops towards the high efficiency, low cost direction, and back of the body annealing point contact (PERC) battery it is advantageous that as the representative of high efficiency, low cost developing direction:
(1) You Yi back reflector: because the existence of cell backside passivation layer makes interior back reflection be increased to 92-95% from the full aluminium back of the body of routine field 65%.The on the one hand absorption of the longwave optical that increases especially provides technical assurance to the trend of following thin slice battery on the other hand;
(2) superior passivating back technology: because the good passivation of backside passivation layer, can with back side recombination rate from the full aluminium back of the body～1000cm/s is reduced to 100-200cm/s;
PERC cell backside electrode is attached on the film usually at present, collects the electric current at the back side by back of the body aluminium.Because 1) back of the body silver contacts with film, rather than directly contacts with silicon, and the stress when causing series welding on the back electrode can not get in time fully discharging; 2) the PERC battery need be carried on the back polishing usually and remove back of the body knot, so silicon wafer thickness aggravation attenuate is frangible during welding; 3) back side coating film and the laser of the increase of PERC battery are opened membrane process, have also increased the latent risk of splitting of battery sheet; In sum, need optimize the stress of strengthening discharging the backplate place at PERC cell backside metallization pattern.
Summary of the invention
Goal of the invention: the present invention proposes a kind of back of the body annealing point contact photovoltaic cell and preparation method thereof, the fragment rate when having reduced this photovoltaic cell sheet series welding.
Technical scheme: the present invention proposes a kind of back of the body annealing point and contacts photovoltaic cell, comprises the passivation layer that is positioned at the cell substrate shady face, and described passivation layer is provided with backplate and back of the body field, leaves the space between described backplate and the back of the body field.
As a kind of improvement of this back of the body annealing point contact photovoltaic cell, described backplate is silver electrode.
A kind of preparation method who carries on the back annealing point contact photovoltaic cell may further comprise the steps:
1) chooses silicon chip and go damage and making herbs into wool;
2) diffusion system knot, and clean and remove unnecessary PN junction;
3) at silicon chip substrate shady face growth of passivation layer;
4) at silicon chip substrate sensitive surface growth antireflection layer;
5) offer through hole at the passivation layer of shady face;
6) printing back of the body field and backplate wherein leave the space between backplate and the passivation layer;
7) printing front electrode;
8) sintering.
As a kind of improvement of this preparation method, the described the 3rd) step in passivation layer be the overlaying structure of aluminium oxide and silicon nitride.
As a kind of improvement of this preparation method, the described the 5th) use the corrosivity slurry to offer through hole in the step, also can use laser beam drilling.
Beneficial effect: a kind of back of the body annealing point contact photovoltaic cell proposed by the invention, there is certain space between its backplate and the back of the body field, this space makes when series welding battery sheet, after backplate is heated, can there be the space to satisfy expanding with heat and contract with cold of backplate, make it can not push passivation layer, cause crackle.Significantly reduced the series welding fragment rate.
Description of drawings
Fig. 1 carries on the back the shady face structural representation of annealing point contact photovoltaic cell for the present invention is a kind of;
Fig. 2 is the formed battery component electroluminescent graph of a kind of back of the body annealing point contact photovoltaic cell of the present invention;
Fig. 3 is the formed battery component electroluminescent graph of existing back of the body annealing point contact photovoltaic cell;
Fig. 4 is battery sheet series welding fragment rate statistical chart of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment only is used for explanation the present invention and is not used in and limits the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims institute restricted portion to the modification of various equivalents of the present invention.Especially
The characteristics of PERC photovoltaic cell are to have increased one deck passivation layer on its shady face, and this passivation layer is offered through hole again, carry on the back being connected of field to realize silicon substrate and aluminium.On passivation layer, carry on the back field and back silver electrode according to existing technology printing aluminium again.
As shown in Figure 1, be not to contact fully between back silver electrode and the aluminium back of the body among the present invention, can see the space, two places that distributing along the two ends of the length direction of back silver electrode.This space when series welding battery sheet, after the back silver electrode is heated, can have the space to satisfy expanding with heat and contract with cold of silver electrode between back silver electrode and aluminium back of the body field like this, makes it can not push passivation layer, causes crackle.
Contact photovoltaic cell accordingly with above-mentioned back of the body annealing point, the present invention proposes a kind of preparation method who carries on the back annealing point contact photovoltaic cell, may further comprise the steps:
1) choose resistivity be the p type single crystal silicon sheet of 8ohmcm as silicon chip substrate, go damage then and in sensitive surface making herbs into wool, form the pyramid structure.
2) adopt the tubular type phosphoric diffusion technology, form n type diffusion layer on the silicon chip substrate surface, the square resistance of the diffusion layer that diffuses to form is 60ohm/sq, clean then and remove the unnecessary PN junction that is positioned at battery sheet edge and the back side, and phosphorosilicate glass.
3) be the alumina layer of 10nm at the silicon chip shady face layer thickness of growing.
4) use pecvd process at superficial growth one deck silicon nitride layer of described alumina layer, alumina layer and silicon nitride layer have constituted passivation layer jointly like this.
4) utilize pecvd process at silicon chip sensitive surface grown silicon nitride antireflection layer.
5) use laser beam drilling to offer through hole at the passivation layer of shady face.
6) silk screen printing back silver electrode 2 and aluminium back of the body field 3, wherein back silver electrode 2 is carried on the back the existing overlapped part that contacts between the field 3 with aluminium, and mutually non-touching part is also arranged.This discontiguous part forms space 1, and described space 1 is distributed in along the two ends of the length direction of back silver electrode 2, sees Fig. 1.The part of overlapped contact has then been set up back silver electrode 2 and has been carried on the back being electrically connected between the field 3 with aluminium.
7) silk screen printing front electrode.
8) sintering makes electrode and silicon substrate form ohmic contact.
The battery sheet that uses this preparation method to make carries out electroluminescence after being made into assembly, obtain figure as shown in Figure 2, and the electroluminescent graph of the battery sheet that existing preparation method produces as shown in Figure 3, be exactly the crackle that existing battery sheet causes because of series welding by contrasting the part that dotted line is irised out among Fig. 3 as can be seen, and there is not this crackle fragment substantially in the battery sheet that the present invention produces among Fig. 2.According to data statistics, the series welding fragment rate from before 3% be down to 0.3%, as shown in Figure 4.
Claims (6)
1. a back of the body annealing point contacts photovoltaic cell, comprises the passivation layer that is positioned at the cell substrate shady face, and described passivation layer is provided with backplate and back of the body field, it is characterized in that, leaves the space between described backplate and the back of the body field.
2. back of the body annealing point contact photovoltaic cell according to claim 1 is characterized in that described backplate is silver electrode.
3. a preparation method who carries on the back annealing point contact photovoltaic cell according to claim 1 is characterized in that, may further comprise the steps:
1) chooses silicon chip and go damage and making herbs into wool;
2) diffusion system knot, and clean and remove unnecessary PN junction;
3) at silicon chip substrate shady face growth of passivation layer;
4) at silicon chip substrate sensitive surface growth antireflection layer;
5) offer through hole at the passivation layer of shady face;
6) printing back of the body field and backplate wherein leave the space between backplate and the passivation layer;
7) printing front electrode;
8) sintering.
4. the preparation method of back of the body annealing point contact photovoltaic cell according to claim 3 is characterized in that the described the 3rd) passivation layer is the overlaying structure of aluminium oxide and silicon nitride in the step.
5. the preparation method of back of the body annealing point contact photovoltaic cell according to claim 3 is characterized in that the described the 5th) use the corrosivity slurry to offer through hole in the step.
6. the preparation method of back of the body annealing point contact photovoltaic cell according to claim 3 is characterized in that the described the 5th) use laser to offer through hole in the step.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013102389039A CN103296099A (en) | 2013-06-17 | 2013-06-17 | Rear surface passivation point contact photovoltaic battery and production method thereof |
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| CN2013102389039A CN103296099A (en) | 2013-06-17 | 2013-06-17 | Rear surface passivation point contact photovoltaic battery and production method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103618029A (en) * | 2013-11-25 | 2014-03-05 | 奥特斯维能源（太仓）有限公司 | Method for manufacturing MWT photovoltaic cell with passivated back |
| CN107068781A (en) * | 2017-06-19 | 2017-08-18 | 浙江晶科能源有限公司 | Solar cell and solar cell module |
| CN107636842A (en) * | 2017-05-31 | 2018-01-26 | 通威太阳能（合肥）有限公司 | A kind of cell piece backside structure for reducing solar cell module fragment rate |
| JP2019009401A (en) * | 2017-06-28 | 2019-01-17 | 東洋アルミニウム株式会社 | Solar cell electrode |
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| CN1815760A (en) * | 2005-12-15 | 2006-08-09 | 江菲菲 | Back point-contact silicon solar cell based on silk-screen printing technology and making method |
| DE102009026027A1 (en) * | 2009-06-24 | 2011-01-05 | Q-Cells Se | Wafer solar cell has semiconductor wafer with front side and rear side and rear electrode-structure is arranged on rear side of semiconductor wafer |
| CN102376821A (en) * | 2011-07-30 | 2012-03-14 | 常州天合光能有限公司 | Passivation process for back of crystalline silicon solar cell and structure of back-passivated crystalline silicon solar cell |
| CN202585429U (en) * | 2011-12-27 | 2012-12-05 | 广东爱康太阳能科技有限公司 | Back point contact silicon solar cell |
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2013
- 2013-06-17 CN CN2013102389039A patent/CN103296099A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1815760A (en) * | 2005-12-15 | 2006-08-09 | 江菲菲 | Back point-contact silicon solar cell based on silk-screen printing technology and making method |
| DE102009026027A1 (en) * | 2009-06-24 | 2011-01-05 | Q-Cells Se | Wafer solar cell has semiconductor wafer with front side and rear side and rear electrode-structure is arranged on rear side of semiconductor wafer |
| CN102376821A (en) * | 2011-07-30 | 2012-03-14 | 常州天合光能有限公司 | Passivation process for back of crystalline silicon solar cell and structure of back-passivated crystalline silicon solar cell |
| CN202585429U (en) * | 2011-12-27 | 2012-12-05 | 广东爱康太阳能科技有限公司 | Back point contact silicon solar cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103618029A (en) * | 2013-11-25 | 2014-03-05 | 奥特斯维能源（太仓）有限公司 | Method for manufacturing MWT photovoltaic cell with passivated back |
| CN107636842A (en) * | 2017-05-31 | 2018-01-26 | 通威太阳能（合肥）有限公司 | A kind of cell piece backside structure for reducing solar cell module fragment rate |
| CN107068781A (en) * | 2017-06-19 | 2017-08-18 | 浙江晶科能源有限公司 | Solar cell and solar cell module |
| JP2019009401A (en) * | 2017-06-28 | 2019-01-17 | 東洋アルミニウム株式会社 | Solar cell electrode |
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Application publication date: 20130911 |