CN102361050A - Method for manufacturing solar cell - Google Patents
Method for manufacturing solar cell Download PDFInfo
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- CN102361050A CN102361050A CN2011103565221A CN201110356522A CN102361050A CN 102361050 A CN102361050 A CN 102361050A CN 2011103565221 A CN2011103565221 A CN 2011103565221A CN 201110356522 A CN201110356522 A CN 201110356522A CN 102361050 A CN102361050 A CN 102361050A
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Abstract
The invention provides a method for manufacturing a solar cell. The method comprises the following steps of: performing boron diffusion on a first surface of a flocked silicon wafer substrate, and performing phosphorous diffusion on a second surface corresponding to the first surface; and manufacturing a first electrode on one surface, which is subjected to boron diffusion, of the silicon wafer substrate, and manufacturing a second electrode on one surface, which is subjected to phosphorous diffusion, of the silicon wafer substrate. In the embodiment, a back electric field is formed in a boron diffusion or phosphorous diffusion mode, so that the efficiency of the solar cell is improved, and the performance of the solar cell is improved.
Description
Technical field
The present invention relates to the semiconductor fabrication techniques field, relate to a kind of method for manufacturing solar battery in particular.
Background technology
Solar cell is the device that directly changes into luminous energy electric energy through photoelectric effect or Photochemical effects, and it is carrier usually with the silicon chip, and manufacturing materials mainly is the basis with the semi-conducting material.
Solar cell making process generally includes operations such as making PN junction, positive electrode, back electrode and back of the body electric field, and PN junction is meant through doping process, with P (Positive; Positively charged) when N-type semiconductor N and N (Negative, electronegative) N-type semiconductor N are produced on the same semiconductor chip, in the formed space charge region of interface; Solar irradiation is on PN junction the time; Promptly form hole-duplet, electronics flows to N type district by p type island region, promptly forms electric current.Back of the body electric field is meant through in solar cell, increasing by a dense doped layer, and the internal electric field of formation can improve the conversion efficiency of solar cell through back of the body electric field.
In existing a kind of method for manufacturing solar battery, be example as silicon chip substrate, at first make P type semiconductor simultaneously become the N type, form PN junction through phosphorous diffusion to select P type semiconductor; After operation such as over etching, plated film,, also is that the P type is laminated then earlier at the silicon chip substrate back side, the silk screen printing back electrode, then at silk screen printing back of the body electric field, silicon chip substrate front silk screen printing positive electrode more afterwards; Promptly form the back of the body electric field, back electrode and positive electrode through high temperature sintering at last.In the existing method, back of the body electric field forms through aluminium paste printing sintering, though technology is simple; But adopt the mode of aluminium paste printing, because the existence of aluminium paste has increased series resistance; And cause leakage current to increase easily; Make parallel resistance reduce, therefore can reduce the efficient of solar cell, reduced the performance of battery.
Summary of the invention
In view of this, the present invention provides a kind of method for manufacturing solar battery, in order to solve available technology adopting aluminium paste printing back of the body electric field, causes the lower problem of solar battery efficiency.
For realizing above-mentioned purpose, the present invention provides following technical scheme:
A kind of method for manufacturing solar battery comprises:
The first surface of the silicon chip substrate after the making herbs into wool is carried out boron diffusion, carry out phosphorous diffusion with the institute corresponding second surface of first surface;
Carry out the one side of boron diffusion in said silicon chip substrate and make first electrode, and make second electrode in the one side that said silicon chip substrate is carried out phosphorous diffusion.
Preferably, said silicon chip substrate is specially P type silicon chip, and then said first surface with the silicon chip substrate after the making herbs into wool carries out boron diffusion, carries out phosphorous diffusion with the institute corresponding second surface of first surface and comprises:
With the first surface polishing of the P type silicon chip after the making herbs into wool, and carry out boron diffusion, form back of the body electric field;
With the second surface polishing of the P type silicon chip that forms back of the body electric field, carry out phosphorous diffusion, form PN junction;
Then said first electrode is specially the solar cell negative electrode, and said second electrode is specially the solar cell positive electrode.
Preferably, said with the polishing of the P type silicon chip first surface after the making herbs into wool, carry out boron diffusion and be specially:
With the polishing of the P type silicon chip first surface after the making herbs into wool, and dry by the fire sheet;
On said P type silicon wafer polishing face, apply boron and expand the latex source, and cure;
Diffusion parameter value according to preset spreads, and forms back of the body electric field, and said diffusion parameter comprises temperature, time and oxygen-supply quantity.
Preferably, said diffusion temperature is 1100 degrees centigrade, and be 2 hours diffusion time, and oxygen-supply quantity is 3 Liter Per Minutes.
Preferably, said stoving temperature is 80 degrees centigrade～85 degrees centigrade, and the time of curing is 25 seconds.
Preferably, said one side of carrying out boron diffusion in said silicon chip substrate is made first electrode, and before the one side that said silicon chip substrate is carried out phosphorous diffusion is made second electrode, also comprises:
Silicon chip after the diffusion is carried out the edge etching, and silicon chip is deposited antireflective coating.
Preferably, said one side of carrying out boron diffusion in said silicon chip substrate is made first electrode, and makes second electrode in the one side that said silicon chip substrate is carried out phosphorous diffusion and comprise:
One side silk screen printing first electrode that carries out boron diffusion in said silicon chip substrate, and one side silk screen printing second electrode that carries out phosphorous diffusion in said silicon chip substrate;
Silicon chip substrate behind silk screen printing first electrode and second electrode is carried out sintering.
Preferably, said silicon chip substrate is specially P type silicon chip, then said silicon chip substrate first surface after the making herbs into wool is carried out boron diffusion, carries out phosphorous diffusion with the institute corresponding second surface of first surface and comprises:
With the polishing of the P type silicon chip second surface after the making herbs into wool, and carry out phosphorous diffusion, form PN junction;
With the polishing of the first surface on the P type silicon chip that forms PN junction, carry out boron diffusion, form back of the body electric field;
Then said first electrode is specially the solar cell negative electrode, and said second electrode is specially the solar cell positive electrode.
Preferably, said silicon chip substrate is specially N type silicon chip, then said silicon chip substrate first surface after the making herbs into wool is carried out boron diffusion, carries out phosphorous diffusion with the institute corresponding second surface of first surface and comprises:
With the polishing of the N type silicon chip second surface after the making herbs into wool, carry out phosphorous diffusion, form back of the body electric field;
With the first surface polishing of the N type silicon chip that forms back of the body electric field, carry out boron diffusion, form PN junction;
Then said first electrode is specially the solar cell positive electrode, and said second electrode is the solar cell negative electrode.
Preferably, said silicon chip substrate is specially N type silicon chip, and then said silicon chip substrate first surface after making herbs into wool carries out phosphorous diffusion, carries out boron diffusion with the institute corresponding second surface of first surface and comprises:
With the polishing of the N type silicon chip first surface after the making herbs into wool, carry out boron diffusion, form PN junction;
With the second surface polishing of the N type silicon chip that forms PN junction, carry out phosphorous diffusion, form back of the body electric field;
Then said first electrode is specially the solar cell positive electrode, and said second electrode is the solar cell negative electrode
Can know via above-mentioned technical scheme, compared with prior art, the invention provides a kind of method for manufacturing solar battery; Silicon chip substrate first surface after the making herbs into wool is carried out boron diffusion, and the second surface corresponding with said first surface carries out phosphorous diffusion, forms back of the body electric field and PN junction; Then at first electrode and second electrode of manufacturing solar cells; Make back of the body electric field through the mode of boron diffusion or phosphorous diffusion, it is higher to make that the doping content of formed back of the body electric field will be come, thereby can stop the electric field doped region motion of supporting or opposing of more photo-generated carrier; Improved the collection probability of photo-generated carrier; Increased the diffusion length of charge carrier, improved the efficient of battery, avoided adopting aluminium paste to make back of the body electric field and made the low problem of solar battery efficiency that the increase of battery series resistance, leakage current increase etc. cause.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is embodiments of the invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to the accompanying drawing that provides.
Fig. 1 is the flow chart of a kind of method for manufacturing solar battery embodiment 1 of the present invention;
Fig. 2 is the flow chart of a kind of method for manufacturing solar battery embodiment 2 of the present invention;
Fig. 3 is the flow chart of a kind of method for manufacturing solar battery embodiment 3 of the present invention.
Embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
The embodiment of the invention discloses a kind of method for manufacturing solar battery; After the silicon chip substrate making herbs into wool of selecting, carry out boron diffusion at its first surface, the second surface of corresponding first surface carries out phosphorous diffusion; Form back of the body electric field and PN junction respectively, then at the manufacture batteries electrode.Because boron and the solid content of phosphorus in silicon are higher; What therefore the doping content of formed back of the body electric field will be come is higher; Thereby can stop the support or oppose electric field doped region motion of more photo-generated carrier; With this collection probability that improves photo-generated carrier, increased the diffusion length of charge carrier, therefore can improve the efficient of battery; And avoided adopting aluminium paste to make back of the body electric field and made series resistance increases, leakage current increase etc. of battery cause the problem of solar battery efficiency reduction, also avoided the pollution of aluminium paste simultaneously sintering furnace.
Referring to Fig. 1, show the flow chart of a kind of Electromagnetically solar energy manufacture method of the present invention embodiment 1, said method can comprise:
Step 101: the first surface of the silicon chip substrate after the making herbs into wool is carried out boron diffusion, carry out phosphorous diffusion with the institute corresponding second surface of first surface.
Described silicon chip substrate can be meant P (Positive, positively charged) type silicon chip, also can be N (Negative, electronegative) type silicon chip.
Need to prove; Described first surface and the second surface corresponding with said first surface; Be meant corresponding two surfaces of silicon chip substrate respectively, described " first " and " second " just are used to distinguish two corresponding faces of silicon chip substrate, are not the qualification to the silicon chip substrate surface.A surface of optional silicon chip substrate is a first surface, and another then corresponding surface promptly is defined as second surface.
Silicon chip is the carrier of solar battery sheet; Before making, at first silicon chip is carried out quality testing, after afterwards the damage pollution layer of silicon chip surface being etched away, carry out normal making herbs into wool; Specifically can utilize the anisotropic etch of silicon, form up-and-down matte at silicon face.Because through repeatedly reflecting and reflecting, matte can increase the absorption of light to incident light, has improved the short circuit current and the conversion efficiency of battery on the surface.
When said silicon chip substrate is a P type silicon chip, carry out boron diffusion at its first surface, boron diffusion to silicon chip is inner, form boron-dopped layer, form back of the body electric field.Carry out phosphorous diffusion at its second surface, phosphorous diffusion to silicon chip is inner, increase the phosphorus doping layer, form PN junction.It is necessary that PN junction is that solar cell realizes that luminous energy transforms to electric energy, P type silicon chip through phosphorous diffusion after, can form the space charge region, the formation PN junction.Back of the body electric field is the additional electric field of battery sheet, increases the efficient that back of the body electric field can improve battery.What form at the PN junction place is the electric field that is pointed to the P district by the N district, and the N district promptly is meant the phosphorus doping layer of formation, and the P district is P type silicon chip district.And after P type silicon chip carries out boron diffusion, increased boron-dopped layer, form the P+ district; Form the P+-P structure at silicon chip substrate first surface place, at P+-P at the interface, promptly can produce the back of the body electric field that points to the P+ district by the P district; It is identical with the direction of an electric field that PN junction forms, and therefore can improve the open circuit voltage of battery.
When said silicon chip substrate is N type silicon chip, after its first surface carries out boron diffusion, increase boron-dopped layer, formation be PN junction; After its second surface carries out phosphorous diffusion, increase the phosphorus doping layer, formation be back of the body electric field; The PN junction place forms the electric field that is pointed to the N district by the P district, and back of the body electric field place increases the phosphorus doping layer through phosphorus doping; Form the N+ district, form the N+-N structure at silicon chip substrate second surface place, at the interface at N+-N; Promptly can produce the back of the body electric field that is pointed to N+ by the N district, it is identical with the direction of an electric field that PN junction forms, and therefore can improve the open circuit voltage of battery.
Need to prove that the present invention does not limit the order of phosphorous diffusion and boron diffusion, can carry out phosphorous diffusion earlier, carrying out boron diffusion then, also can carry out boron diffusion earlier, carrying out phosphorous diffusion.
Through boron diffusion or the formed back of the body electric field of phosphorous diffusion; Because boron and the solid content of phosphorus in silicon are higher; Therefore the doping content of formed back of the body electric field is higher, thereby can stop the more photo-generated carrier electric field doped region of supporting or opposing to move, and improves the collection probability of photo-generated carrier with this; Increase the diffusion length of charge carrier, therefore can improve the efficient of battery.
Step 102: the one side of carrying out boron diffusion in said silicon chip substrate is made first electrode, and makes second electrode in the one side that said silicon chip substrate is carried out phosphorous diffusion.
Silicon chip substrate is accomplished phosphorous diffusion and boron diffusion, after forming PN junction and carrying on the back electric field, gets final product the silk-screen electrode, so that the electric current of conversion is derived.Make the mode of electrodes use silk screen printing slurry and sintering, slurry is selected the silver slurry for use.
Silicon chip after the silk screen printing can not directly use, and needs through the sintering furnace Fast Sintering organic binder resin to be burnt.
When said silicon chip substrate was P type silicon chip, described first electrode was the negative electrode of the solar cell of formation, and described second electrode is the positive electrode of the solar cell of formation.
When said silicon chip substrate was N type silicon chip, described first electrode was the positive electrode of the solar cell of formation, and described second electrode is the negative electrode of the solar cell of formation.
Make back of the body electric field owing to need not the silk-screen aluminium paste, the electrode that makes back of the body electric field place make can directly contact with silicon chip, has therefore reduced the contact resistance of electrode and silicon chip, thereby has reduced the series resistance of battery, therefore can improve the efficient of battery sheet.
In the present embodiment; Mode through boron diffusion or phosphorous diffusion forms back of the body electric field, has increased the concentration that forms back of the body electric field doped layer, therefore can improve the efficient of solar cell; And reduced the series resistance of battery, further improved the efficient of solar cell.
Referring to Fig. 2, show the flow chart of a kind of method for manufacturing solar battery embodiment 2 of the present invention, present embodiment 2 is that P type silicon chip is the manufacturing process that example is described this solar cell in detail with the silicon chip substrate, said method can comprise:
Step 201: with the first surface polishing of the P type silicon chip after the making herbs into wool, and carry out boron diffusion, form back of the body electric field.
After sunlight gets into the battery sheet, need to guarantee after the light energy reflected inner, rather than reflect away, therefore will make the first surface of carrying on the back electric field and polish, make the reflected back battery sheet inside that light can be more.
The detailed process of carrying out boron diffusion is:
The at first first surface of P type silicon chip polishing after the making herbs into wool, and dry by the fire sheet.The baking sheet is in order to guarantee the drying of silicon chip surface, to improve the adhesiveness of boron diffusion latex and silicon chip.
Expand the latex source with applying boron on the burnishing surface of P type silicon chip then, and cure.
It specifically is to utilize coating machine that said coating boron expands the latex source, the mode that adopts track to apply.For the organic principle in the latex source is volatilized away, behind the coated with latex source, need cure, stoving temperature is selected 80 degrees centigrade～85 degrees centigrade, and the time of curing is 25 seconds.
According to preset diffusion parameter, spread afterwards, boron diffusion to silicon chip is inner, form back of the body electric field, said diffusion parameter comprises temperature, time and oxygen-supply quantity.
Adopt boron to expand the latex source, described diffusion temperature specifically can be 1100 degrees centigrade, High temperature diffusion.Can be 2 hours diffusion time, and oxygen-supply quantity can be 3 Liter Per Minutes.
Need to prove that said preset diffusion parameter is set according to actual conditions are concrete, its manufacture craft with raw material, diffusion facilities and the solar cell of boron diffusion is relevant in proper order.
When spreading, adopt face-to-face diffusion way, promptly the first surface of corresponding another silicon chip of the first surface of silicon chip to prevent the volatilization of latex source, influences the silicon chip second surface.
Step 202: will form the second surface polishing of the P type silicon chip of back of the body electric field, and carry out phosphorous diffusion, and form PN junction.
After making the back electric field, the more pairing second surface of first surface in the P type silicon chip is polished, evaporate into the latex source of second surface, carry out phosphorous diffusion then, form the phosphorus doping layer at the second surface place, produce PN junction with removal.Diffusion way also adopts face-to-face mode.The detailed process of making PN junction is identical with prior art, repeats no more at this.
Step 203: the silicon chip after will spreading carries out the edge etching, and silicon chip is deposited antireflective coating.
Because after silicon chip process boron diffusion and the phosphorous diffusion, inevitably can spread boron and phosphorus in the edge of silicon chip, phenomenon easily is short-circuited.Therefore need carry out the edge etching to the silicon chip after the diffusion, remove boron and phosphorus in the edge diffusion.The edge etching specifically can adopt plasma etching technology.
In order to reduce the reflection of silicon face, improve the conversion efficiency of battery, also need all surface deposition one deck antireflective coating of silicon chip be specially silicon nitride film.Specifically can adopt PECVD equipment to prepare antireflective coating.PECVD is a plasma enhanced chemical vapor deposition.
Step 204: one side silk screen printing first electrode that carries out boron diffusion at said P type silicon chip, and one side silk screen printing second electrode that carries out phosphorous diffusion at said P type silicon chip.
Said P type silicon chip carries out boron diffusion and phosphorous diffusion, forms back of the body electric field and PN junction, and behind the deposition antireflective coating, gets final product the manufacture batteries electrode, specifically adopts the mode of silk screen printing slurry, and slurry is selected the silver slurry for use.
In the one side that P type silicon chip carries out boron diffusion, promptly silk screen printing first electrode on the boron-dopped layer that forms forms the battery negative electrode.In the one side of carrying out phosphorous diffusion, promptly silk screen printing second electrode on the phosphorus doping layer that forms forms the battery positive electrode.
Step 205: the P type silicon chip behind silk screen printing first electrode and second electrode is carried out sintering.
Place sintering furnace to carry out Fast Sintering the silicon chip that forms first electrode and second electrode, organic binder resin is burnt, only remaining silver electrode makes electrode and silicon chip form alloy, accomplishes the making of solar cell.
In the present embodiment, at first select the one side of P type silicon chip to carry out boron diffusion, form back of the body electric field.And then the P type silicon chip another side that will make the back electric field carries out phosphorous diffusion, makes PN junction, and silk-screen is made first electrode and second electrode more at last; Adopt the mode of boron diffusion to form back of the body electric field, because under the high temperature, the solid content of boron in silicon is higher than the solid content of aluminium in silicon; For example the solid content of boron is about 24 times of aluminium 1200 degrees centigrade the time, and the doping content in the P+ district of the back of the body electric field that therefore forms is wanted height, thereby can stop more photo-generated carrier to move to the P+ district; Improve the probability of collecting photo-generated carrier with this, when also having reduced the making electrode simultaneously, the contact resistance of silver slurry and silicon; Reduce series resistance, improved battery sheet efficient.And also avoided pollution to sintering furnace.
As another embodiment; Can also earlier P type silicon chip be carried out phosphorous diffusion and form PN junction; Carrying out boron diffusion formation back of the body electric field then, at last at the silk screen printing battery electrode, concrete operating process is similar with embodiment 2; The parameter value of selecting when wherein spreading can be different, get final product can realize best diffusion.
Referring to Fig. 3, show the flow chart of a kind of method for manufacturing solar battery embodiment 3 of the present invention, present embodiment 3 is that N type silicon chip is an example with the silicon chip substrate, describes the manufacturing process of this solar cell in detail, said method can comprise:
Step 301: with the polishing of the N type silicon chip second surface after the making herbs into wool, carry out phosphorous diffusion, form back of the body electric field.
In order to distinguish with the foregoing description, still adopt the description form of second surface in the present embodiment, this second surface can be any surface in the two corresponding surfaces of N type silicon chip, said second surface is not concrete restriction.
Its form back of the body electric field detailed process can for:
With the polishing of the N type silicon chip second surface after the making herbs into wool, and dry by the fire sheet;
Phosphors coated source on said N type silicon wafer polishing face, and cure;
Temperature, time and oxygen-supply quantity according to preset spread, and form back of the body electric field.
The concrete parameter values of described preset temperature, time and oxygen-supply quantity is specifically set according to actual conditions, can satisfy best diffusion.
Step 302: will form the first surface polishing of the N type silicon chip of back of the body electric field, and carry out boron diffusion, and form PN junction.
Said first surface is the surface corresponding with said second surface.
After this first surface polishing, carry out boron diffusion, specifically can be to utilize coating machine to apply boron to expand the latex source, after curing then, spread, to form PN junction according to preset boron diffusion parameter.
Need to prove; Present embodiment and the foregoing description 2 be described, and carry out phosphorous diffusion and carry out the concrete mode of boron diffusion can be identical; Just the parameter value of diffusion requirement is different, and described diffusion parameter value can specifically be set according to actual conditions, gets final product can realize diffusion.
Step 303: the silicon chip after will spreading carries out the edge etching, and silicon chip is deposited antireflective coating.
Step 304: one side silk screen printing first electrode that carries out boron diffusion at said N type silicon chip, and one side silk screen printing second electrode that carries out phosphorous diffusion at said N type silicon chip.
Said N type silicon chip carries out boron diffusion and phosphorous diffusion, forms back of the body electric field and PN junction, and behind the deposition antireflective coating, gets final product the manufacture batteries electrode, specifically adopts the mode of silk screen printing slurry, and slurry is selected the silver slurry for use.
In the one side that N type silicon chip carries out boron diffusion, promptly silk screen printing first electrode on the boron-dopped layer that forms forms the battery positive electrode.In the one side of carrying out phosphorous diffusion, promptly silk screen printing second electrode on the phosphorus doping layer that forms forms the battery negative electrode.
Step 305: the N type silicon chip behind silk screen printing first electrode and second electrode is carried out sintering.
In the present embodiment, at first select the one side of N type silicon chip to carry out phosphorous diffusion, form back of the body electric field.And then the N type silicon chip another side that will make the back electric field carries out boron diffusion, makes PN junction, and silk-screen is made first electrode and second electrode more at last; Adopt the mode of phosphorous diffusion to form back of the body electric field, because the solid content of phosphorus in silicon is higher than the solid content of aluminium in silicon, therefore the concentration in the N+ district of formed back of the body electric field wants high; Therefore can improve the efficient of battery, when also having reduced the making electrode simultaneously, the contact resistance of silver slurry and silicon; Reduce series resistance, further improved battery sheet efficient.And also avoided pollution to sintering furnace.
As another embodiment; Can also at first N type silicon chip be carried out phosphorous diffusion and form PN junction; Carrying out boron diffusion formation back of the body electric field then, at last at the silk screen printing battery electrode, concrete operating process is similar with embodiment 3; The parameter value of selecting when wherein spreading can be different, get final product can realize best diffusion.
Each embodiment adopts the mode of going forward one by one to describe in this specification, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments among this paper.Therefore, the present invention will can not be restricted to these embodiment shown in this paper, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (10)
1. a method for manufacturing solar battery is characterized in that, comprising:
The first surface of the silicon chip substrate after the making herbs into wool is carried out boron diffusion, carry out phosphorous diffusion with the institute corresponding second surface of first surface;
Carry out the one side of boron diffusion in said silicon chip substrate and make first electrode, and make second electrode in the one side that said silicon chip substrate is carried out phosphorous diffusion.
2. method according to claim 1 is characterized in that, said silicon chip substrate is specially P type silicon chip, and then said first surface with the silicon chip substrate after the making herbs into wool carries out boron diffusion, carries out phosphorous diffusion with the institute corresponding second surface of first surface and comprises:
With the first surface polishing of the P type silicon chip after the making herbs into wool, and carry out boron diffusion, form back of the body electric field;
With the second surface polishing of the P type silicon chip that forms back of the body electric field, carry out phosphorous diffusion, form PN junction;
Then said first electrode is specially the solar cell negative electrode, and said second electrode is specially the solar cell positive electrode.
3. method according to claim 2 is characterized in that, and is said with the polishing of the P type silicon chip first surface after the making herbs into wool, carries out boron diffusion and is specially:
With the polishing of the P type silicon chip first surface after the making herbs into wool, and dry by the fire sheet;
On said P type silicon wafer polishing face, apply boron and expand the latex source, and cure;
Diffusion parameter value according to preset spreads, and forms back of the body electric field, and said diffusion parameter comprises temperature, time and oxygen-supply quantity.
4. method according to claim 3 is characterized in that, said diffusion temperature is 1100 degrees centigrade, and be 2 hours diffusion time, and oxygen-supply quantity is 3 Liter Per Minutes.
5. method according to claim 3 is characterized in that, said stoving temperature is 80 degrees centigrade～85 degrees centigrade, and the time of curing is 25 seconds.
6. method according to claim 1 is characterized in that, said one side of carrying out boron diffusion in said silicon chip substrate is made first electrode, and before the one side that said silicon chip substrate is carried out phosphorous diffusion is made second electrode, also comprises:
Silicon chip after the diffusion is carried out the edge etching, and silicon chip is deposited antireflective coating.
7. method according to claim 1 is characterized in that, said one side of carrying out boron diffusion in said silicon chip substrate is made first electrode, and makes second electrode in the one side that said silicon chip substrate is carried out phosphorous diffusion and comprise:
One side silk screen printing first electrode that carries out boron diffusion in said silicon chip substrate, and one side silk screen printing second electrode that carries out phosphorous diffusion in said silicon chip substrate;
Silicon chip substrate behind silk screen printing first electrode and second electrode is carried out sintering.
8. method according to claim 1 is characterized in that, said silicon chip substrate is specially P type silicon chip, then said silicon chip substrate first surface after the making herbs into wool is carried out boron diffusion, carries out phosphorous diffusion with the institute corresponding second surface of first surface and comprises:
With the polishing of the P type silicon chip second surface after the making herbs into wool, and carry out phosphorous diffusion, form PN junction;
With the polishing of the first surface on the P type silicon chip that forms PN junction, carry out boron diffusion, form back of the body electric field;
Then said first electrode is specially the solar cell negative electrode, and said second electrode is specially the solar cell positive electrode.
9. method according to claim 1 is characterized in that, said silicon chip substrate is specially N type silicon chip, then said silicon chip substrate first surface after the making herbs into wool is carried out boron diffusion, carries out phosphorous diffusion with the institute corresponding second surface of first surface and comprises:
With the polishing of the N type silicon chip second surface after the making herbs into wool, carry out phosphorous diffusion, form back of the body electric field;
With the first surface polishing of the N type silicon chip that forms back of the body electric field, carry out boron diffusion, form PN junction;
Then said first electrode is specially the solar cell positive electrode, and said second electrode is the solar cell negative electrode.
10. according to claim 1, it is characterized in that said silicon chip substrate is specially N type silicon chip, then said silicon chip substrate first surface after making herbs into wool carries out phosphorous diffusion, carries out boron diffusion with the institute corresponding second surface of first surface and comprises:
With the polishing of the N type silicon chip first surface after the making herbs into wool, carry out boron diffusion, form PN junction;
With the second surface polishing of the N type silicon chip that forms PN junction, carry out phosphorous diffusion, form back of the body electric field;
Then said first electrode is specially the solar cell positive electrode, and said second electrode is the solar cell negative electrode.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742411A (en) * | 2016-04-19 | 2016-07-06 | 中利腾晖光伏科技有限公司 | Solar cell and manufacturing method therefor |
| CN106328765A (en) * | 2016-08-31 | 2017-01-11 | 晋能清洁能源科技有限公司 | Preparation method and preparation technology of efficient PERC crystalline silicon solar cell |
| CN109244189A (en) * | 2018-09-27 | 2019-01-18 | 嘉兴金瑞光伏科技有限公司 | Screen printer print technique |
| CN109713056A (en) * | 2018-12-04 | 2019-05-03 | 上海交通大学 | A kind of black silicon solar cell preparation method with radial PN junction |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246922A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Method for reinforcing optical capturing effect of thin film photovoltaic device |
| CN101692466A (en) * | 2009-09-17 | 2010-04-07 | 中电电气（南京）光伏有限公司 | Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique |
-
2011
- 2011-11-10 CN CN2011103565221A patent/CN102361050A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246922A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Method for reinforcing optical capturing effect of thin film photovoltaic device |
| CN101692466A (en) * | 2009-09-17 | 2010-04-07 | 中电电气（南京）光伏有限公司 | Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742411A (en) * | 2016-04-19 | 2016-07-06 | 中利腾晖光伏科技有限公司 | Solar cell and manufacturing method therefor |
| CN106328765A (en) * | 2016-08-31 | 2017-01-11 | 晋能清洁能源科技有限公司 | Preparation method and preparation technology of efficient PERC crystalline silicon solar cell |
| CN109244189A (en) * | 2018-09-27 | 2019-01-18 | 嘉兴金瑞光伏科技有限公司 | Screen printer print technique |
| CN109713056A (en) * | 2018-12-04 | 2019-05-03 | 上海交通大学 | A kind of black silicon solar cell preparation method with radial PN junction |
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