CN110310998A - A kind of electrode structure of back contact battery - Google Patents
A kind of electrode structure of back contact battery Download PDFInfo
- Publication number
- CN110310998A CN110310998A CN201910486164.2A CN201910486164A CN110310998A CN 110310998 A CN110310998 A CN 110310998A CN 201910486164 A CN201910486164 A CN 201910486164A CN 110310998 A CN110310998 A CN 110310998A
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- China
- Prior art keywords
- silicon substrate
- electrode
- crystalline silicon
- front surface
- electrode structure
- Prior art date
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- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 32
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052709 silver Inorganic materials 0.000 claims abstract description 22
- 239000004332 silver Substances 0.000 claims abstract description 22
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 19
- 239000004411 aluminium Substances 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 238000002161 passivation Methods 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910017107 AlOx Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 238000004513 sizing Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
Abstract
It is an object of the invention to disclose a kind of electrode structure of back contact battery, it includes crystalline silicon substrate, the crystalline silicon substrate back surface includes successively from inside to outside the region alternately arranged back surface n+ and the region laser slotting P+, passivation layer and metal electrode, and the crystalline silicon substrate front surface is followed successively by n+ doped region from inside to outside and front surface passivated reflection reducing penetrates layer；Compared with prior art, point contact silver electrode is printed using bottom, upper layer prints the mode of aluminium electrode, not only avoided aluminium paste and printed phenomenon easy to fall off in silver electrode, but also formd good Ohmic contact.Silver electrode is replaced using upper layer aluminium electrode, cost of sizing agent can be reduced on the premise of ensuring performance, achieved the object of the present invention.
Description
Technical field
The present invention relates to a kind of back contact battery structure, in particular to a kind of electrode structure of back contact battery.
Background technique
With the development of photovoltaic industry, in crystal silicon solar cell sheet production, the promotion of photoelectric conversion efficiency and electricity
The reduction of pond manufacturing cost has become the basic of entire theCourse of PV Industry, and being constantly progressive with technology, increasingly
More high-efficiency batteries enters the visual field of people.
Currently, one of efficient crystal silicon battery of mainstream is exactly back contact solar cell, P+ doped region and N+ doped region
Domain is both placed in cell backside, and the P-doped zone electric current in the presence of positive main gate line is generally collected using silver electrode and is existed negative
The N-doped zone electric current of pole main gate line.But compared to silver electrode, it is blunt that aluminium electrode not only can also play battery while conduction
Change, improves the effect of battery performance.But there is also line resistance height, easy to fall off, the Ohmic contacts that can not have been formed for simple aluminium electrode
The problems such as.
Therefore, the advantage for how playing aluminium electrode to the greatest extent, applying it in back contact battery is also to need to examine
The problem considered.For industrialization production, cost control is the big problem that must be taken into consideration, and is printed and is walked due to back contact battery
Rapid cumbersome, slurry consumption is huge, and cost of sizing agent is reduced in the case where guaranteeing battery performance becomes the emphasis of cost control.
It is accordingly required in particular to which a kind of electrode structure of back contact battery, above-mentioned existing to solve the problems, such as.
Summary of the invention
The purpose of the present invention is to provide a kind of electrode structures of back contact battery, in view of the deficiencies of the prior art, are promoted
The open-circuit voltage and short circuit current of battery, has saved battery cost.
Technical problem solved by the invention can be realized using following technical scheme:
A kind of electrode structure of back contact battery, which is characterized in that it includes crystalline silicon substrate, the crystalline silicon substrate back surface
It is described from inside to outside successively including the region alternately arranged back surface n+ and the region laser slotting P+, passivation layer and metal electrode
Crystalline silicon substrate front surface is followed successively by n+ doped region from inside to outside and front surface passivated reflection reducing penetrates layer；The laser of the metal electrode
The area P+ bottom of slotting is the aluminium electrode that point contact is passivated, and upper layer is silver electrode；The contact zone n+ bottom is the silver electrode of Ohmic contact,
Upper layer is conductive aluminium electrode.
In one embodiment of the invention, the crystalline silicon substrate is p type single crystal silicon substrate, p-type polysilicon substrate, N-type
Any one in monocrystalline substrate and N-type polycrystalline silicon substrate.
In one embodiment of the invention, the crystalline silicon substrate front surface and back surface are in making herbs into wool face or burnishing surface
Any one.
In one embodiment of the invention, it is SiO that the front surface passivated reflection reducing, which penetrates layer,2、SiNx、AlOxOne of
Or two kinds of combination.
In one embodiment of the invention, the main grid line electrode of the crystalline silicon substrate back surface uses low temperature main grid silver paste
Or any one in ultra-violet curing main grid silver paste.
In one embodiment of the invention, the shape of the point contact silver electrode can be circle, and rectangle is trapezoidal etc.
Any one in geometry.
The electrode structure of back contact battery of the invention prints point contact silver electrode using bottom compared with prior art,
The mode of aluminium electrode is printed on upper layer, is avoided the silicon wafer risk that directly individually contact aluminium electrode falls off, is realized the blunt of back surface
Change contact and field passivation effect, improve open-circuit voltage and short circuit current, on the premise of ensuring performance, reduce slurry at
This, achieves the object of the present invention.
The features of the present invention sees the detailed description of the drawings of the present case and following preferable embodiment and obtains clearly
Solution.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of back contact battery of the invention；
Fig. 2 is the schematic diagram of the point contact silver electrode printed pattern example 1 of back contact battery of the invention；
Fig. 3 is the schematic diagram of the point contact silver electrode printed pattern example 2 of back contact battery of the invention；
Fig. 4 is the schematic diagram of the point contact silver electrode printed pattern example 3 of back contact battery of the invention；
Fig. 5 is the schematic diagram that the electrode structure of back contact battery of the invention prints.
Specific embodiment
In order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, tie below
Conjunction is specifically illustrating, and the present invention is further explained.
Embodiment
As shown in Figures 1 to 5, the electrode structure of back contact battery of the invention, it includes crystalline silicon substrate, the crystal silicon lining
Bottom back surface successively includes the region alternately arranged back surface n+ and the region laser slotting P+, passivation layer and metal electricity from inside to outside
Pole, the crystalline silicon substrate front surface is followed successively by n+ doped region from inside to outside and front surface passivated reflection reducing penetrates layer；The metal electricity
The area laser slotting P+ of pole and n+ doped region bottom are the silver electrode of point contact passivation, and upper layer is the aluminium electrode of line contact；
In the present embodiment, the crystalline silicon substrate is p type single crystal silicon substrate, p-type polysilicon substrate, n type single crystal silicon substrate
With any one in N-type polycrystalline silicon substrate.
In the present embodiment, the crystalline silicon substrate front surface and back surface are any one in making herbs into wool face or burnishing surface.
In the present embodiment, it is SiO that the front surface passivated reflection reducing, which penetrates layer,2、SiNx、AlOxOne of or a variety of groups
It closes.
In the present embodiment, the main grid line electrode of the crystalline silicon substrate back surface uses low temperature main grid silver paste or ultra-violet curing
Any one in main grid silver paste.
In the present embodiment, the shape of the point contact silver electrode can be to be round, rectangle, in the geometries such as trapezoidal
Any one.
The electrode structure of back contact battery of the invention, opposite traditional handicraft, has saved battery cost.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention, the claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (6)
1. a kind of electrode structure of back contact battery, which is characterized in that it includes crystalline silicon substrate, the crystalline silicon substrate back surface from
Interior arrive outer successively includes the region alternately arranged back surface n+ and the region laser slotting P+, passivation layer and metal electrode, the crystalline substance
Silicon substrate front surface is followed successively by n+ doped region from inside to outside and front surface passivated reflection reducing penetrates layer；The laser of the metal electrode is opened
The area slot P+ and n+ doped region bottom are the silver electrode of point contact, and upper layer is the aluminium electrode of line contact.
2. the electrode structure of back contact battery as described in claim 1, which is characterized in that the crystalline silicon substrate is p-type monocrystalline
Any one in silicon substrate, p-type polysilicon substrate, n type single crystal silicon substrate and N-type polycrystalline silicon substrate.
3. the electrode structure of back contact battery as described in claim 1, which is characterized in that the crystalline silicon substrate front surface and back
Surface is any one in making herbs into wool face or burnishing surface.
4. the electrode structure of back contact battery as described in claim 1, which is characterized in that the front surface passivated reflection reducing penetrates layer
For one of SiO2, SiNx, AlOx or a variety of combinations.
5. the electrode structure of back contact battery as described in claim 1, which is characterized in that the master of the crystalline silicon substrate back surface
Gate line electrode is using any one in low temperature main grid silver paste or ultra-violet curing main grid silver paste.
6. the shape of point contact silver electrode as described in claim 1 can be to be round, rectangle, appointing in the geometries such as trapezoidal
It anticipates one kind.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910486164.2A CN110310998A (en) | 2019-06-05 | 2019-06-05 | A kind of electrode structure of back contact battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910486164.2A CN110310998A (en) | 2019-06-05 | 2019-06-05 | A kind of electrode structure of back contact battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110310998A true CN110310998A (en) | 2019-10-08 |
Family
ID=68075059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910486164.2A Pending CN110310998A (en) | 2019-06-05 | 2019-06-05 | A kind of electrode structure of back contact battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110310998A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1592972A (en) * | 2001-11-26 | 2005-03-09 | 壳牌阳光有限公司 | Manufacturing a solar cell with backside contacts |
| CN102555562A (en) * | 2011-12-28 | 2012-07-11 | 晶澳（扬州）太阳能科技有限公司 | Printing process of solar battery plate |
| CN202585429U (en) * | 2011-12-27 | 2012-12-05 | 广东爱康太阳能科技有限公司 | Back point contact silicon solar cell |
| CN202977438U (en) * | 2012-12-27 | 2013-06-05 | 汉能科技有限公司 | Full back contact crystalline silicon cell |
| CN103531653A (en) * | 2012-07-06 | 2014-01-22 | 茂迪股份有限公司 | Back contact solar cell and manufacturing method thereof |
| CN104157742A (en) * | 2013-05-14 | 2014-11-19 | 联景光电股份有限公司 | Solar cell and manufacturing method thereof |
| CN107994101A (en) * | 2017-12-15 | 2018-05-04 | 南通苏民新能源科技有限公司 | A kind of crystal silicon solar cell sheet metal electrode production method |
| CN108735829A (en) * | 2018-07-12 | 2018-11-02 | 浙江爱旭太阳能科技有限公司 | The p-type PERC double-sided solar batteries and preparation method thereof of back side photoelectric conversion efficiency can be promoted |
-
2019
- 2019-06-05 CN CN201910486164.2A patent/CN110310998A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1592972A (en) * | 2001-11-26 | 2005-03-09 | 壳牌阳光有限公司 | Manufacturing a solar cell with backside contacts |
| CN202585429U (en) * | 2011-12-27 | 2012-12-05 | 广东爱康太阳能科技有限公司 | Back point contact silicon solar cell |
| CN102555562A (en) * | 2011-12-28 | 2012-07-11 | 晶澳（扬州）太阳能科技有限公司 | Printing process of solar battery plate |
| CN103531653A (en) * | 2012-07-06 | 2014-01-22 | 茂迪股份有限公司 | Back contact solar cell and manufacturing method thereof |
| CN202977438U (en) * | 2012-12-27 | 2013-06-05 | 汉能科技有限公司 | Full back contact crystalline silicon cell |
| CN104157742A (en) * | 2013-05-14 | 2014-11-19 | 联景光电股份有限公司 | Solar cell and manufacturing method thereof |
| CN107994101A (en) * | 2017-12-15 | 2018-05-04 | 南通苏民新能源科技有限公司 | A kind of crystal silicon solar cell sheet metal electrode production method |
| CN108735829A (en) * | 2018-07-12 | 2018-11-02 | 浙江爱旭太阳能科技有限公司 | The p-type PERC double-sided solar batteries and preparation method thereof of back side photoelectric conversion efficiency can be promoted |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20200824 Address after: 710099 589 East Chang'an Street, Xi'an Space Base, Shaanxi Province Applicant after: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Applicant after: Huanghe hydropower Xining Solar Power Co.,Ltd. Applicant after: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Applicant after: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Address before: 710099 589 East Chang'an Street, Xi'an Space Base, Shaanxi Province Applicant before: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Applicant before: XINING BRANCH OF SPIC XI'AN SOLAR POWER Co.,Ltd. Applicant before: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Applicant before: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. |
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| TA01 | Transfer of patent application right | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191008 |
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| RJ01 | Rejection of invention patent application after publication |