CN209199953U - A kind of passivation solar battery of type metal electrode - Google Patents
A kind of passivation solar battery of type metal electrode Download PDFInfo
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- CN209199953U CN209199953U CN201822233558.0U CN201822233558U CN209199953U CN 209199953 U CN209199953 U CN 209199953U CN 201822233558 U CN201822233558 U CN 201822233558U CN 209199953 U CN209199953 U CN 209199953U
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- polysilicon
- solar battery
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 66
- 239000002184 metal Substances 0.000 title claims abstract description 66
- 238000002161 passivation Methods 0.000 title claims abstract description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 85
- 229920005591 polysilicon Polymers 0.000 claims abstract description 76
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 21
- 239000011159 matrix material Substances 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 10
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a kind of passivation solar battery of type metal electrode, including N-type crystalline silicon matrix, the back surface of the N-type crystalline silicon matrix successively penetrates film, n+ metal electrode including n+ doped polysilicon layer, back passivated reflection reducing from inside to outside；The N-type crystalline silicon matrix is formed with DOPOS doped polycrystalline silicon magnetic tape trailer layer close to the side of the n+ doped polysilicon layer.Extend the magnetic tape trailer of Metal contact regions doped polysilicon layer, increases the depth that foreign atom is spread in crystalline silicon, reduce the compound of Metal contact regions；It keeps the doped polysilicon layer magnetic tape trailer of nonmetallic contact area shallower, reduces the compound of nonmetallic contact area；The n+ doped polysilicon layer of simple process, first area and second area can be completed by once doping, and the technical process being related to industrialization is suitble to large-scale production；Metal can be significantly reduced and contact compound and ohmic loss, improve the open-circuit voltage and transfer efficiency of battery.
Description
Technical field
The utility model relates to technical field of solar batteries, and in particular to a kind of passivation solar energy of type metal electrode
Battery.
Background technique
Currently, most common method for metallising is that silk-screen printing adds sintering in crystal-silicon solar cell industrialization, using silk
Wire mark brush adds sintering that can make metal piercing tunnel oxide and doped polysilicon layer, directly contacts with silicon substrate, leads to metal area
Compound surge under domain, causes biggish recombination losses.Particularly with the slurry using silver-colored aluminium paste, metal piercing oxide layer and mix
The phenomenon that miscellaneous polysilicon layer, can be more serious.
In crystal-silicon solar cell, metal and semiconductor contact regions it is serious compound, become and restrict crystalline silicon too
An important factor for positive battery efficiency develops.In current commercialized crystal-silicon solar cell, front surface generally uses shallow junction Gao Fang
Resistance design, for p-type battery, front surface is the emitter structure of phosphorus doping, the metal contact zone after silk-screen printing, sintering
Dark saturation current density (the J in domain0,metal) it is 800~1000fA/cm2；For N-shaped battery, front surface has the hair of identical sheet resistance
Emitter-base bandgap grading is after silk-screen printing, sintering, the dark saturation current density (J of Metal contact regions0,metal) it is 1000~2000fA/
cm2.Demand with market to high-efficiency battery and high power component sharply increases, and reduces answering for metal and semiconductor contact regions
Conjunction is particularly important.
Application No. is the Chinese utility model patents of CN201721045632.5 to disclose what kind of back pastes were directly burnt
Back passivation solar battery, including silicon nitride anti-reflecting film, phosphorus-diffused layer, the P-type silicon matrix, passivation being successively laid with from top to bottom
Layer and the non-burn-through type aluminium paste layer in the back side, it further includes silicon oxynitride film that passivation layer, which includes silicon oxide film and silicon nitride film, the nitridation
Silicon antireflective coating is equipped with several positive silver electrodes for having burnt silicon nitride anti-reflecting film, and overleaf passivation layer is equipped with back electricity
Pole, back electrode are connect with P-type silicon matrix, pulp layer and P-type silicon substrate contact, overleaf on passivation layer, print one layer of non-burn-through
Type aluminium paste layer.It is subsequent easily to increase PERL structure technology, front in production process using the design of the utility model
The superposition of SE structure technology, back side boron diffusion technique or above-mentioned technology, scalability are strong.
Above-mentioned patent is burnt layer using silver paste and is contacted through silicon oxide film and silicon nitride film with silicon substrate, but does not consider
To the serious compound of metal and semiconductor contact regions, the problem of the serious efficiency for affecting crystal-silicon solar cell.
Utility model content
The purpose of this utility model is that in view of the deficiencies of the prior art, provide a kind of significant decrease metal contact it is compound and
Ohmic loss improves the passivation solar battery of the open-circuit voltage of battery and the type metal electrode of transfer efficiency, this is practical new
The technical solution that type is taken are as follows:
A kind of passivation solar battery of type metal electrode, including N-type crystalline silicon matrix, the N-type crystalline silicon matrix
Back surface from inside to outside successively include n+ doped polysilicon layer, back passivated reflection reducing penetrate film, n+ metal electrode；
The N-type crystalline silicon matrix is formed with DOPOS doped polycrystalline silicon magnetic tape trailer layer close to the side of the n+ doped polysilicon layer.
Wherein, the DOPOS doped polycrystalline silicon magnetic tape trailer layer includes the first band tail region domain being arranged alternately and the second magnetic tape trailer region, institute
The thickness that first band tail area thickness is greater than second magnetic tape trailer region is stated, the n+ metal electrode corresponds to the first band tail region
Domain setting.
Wherein, the n+ doped polysilicon layer includes the first polysilicon region and the second polysilicon region, more than described first
The thickness of polysilicon regions is less than the thickness of second polysilicon region；First polysilicon region corresponds to first magnetic tape trailer
Area, second polysilicon region correspond to second magnetic tape trailer region.
Wherein, the doping concentration of first polysilicon region is greater than the doping concentration of second polysilicon region.
Wherein, first polysilicon region with a thickness of 50~300nm, square resistance is 10~60 Ω/sq；
Second polysilicon region with a thickness of 150~400nm, square resistance is 30~200 Ω/sq.
It wherein, further include tunnel oxide between the back surface of the N-type crystalline silicon matrix and the n+ doped polysilicon layer
Layer.
Wherein, the tunnel oxide with a thickness of 0.5~2.5nm.
Wherein, the front surface of the N-type crystalline silicon matrix successively includes that p+ adulterates emitter layer, preceding passivation subtracts from inside to outside
Reflective film and p+ metal electrode.
Wherein, the n+ metal electrode and p+ metal electrode are " H " type grid line, main grid spaced set 4~12, wide
100~800 μm of degree, is highly 10~40 μm；Secondary grid spaced set 90~120, width are 20~60 μm, highly for 10~
40μm。
The technological merit of the utility model is mainly reflected in:
The polysilicon layer of doping with height alternating structural is set, in Metal contact regions and nonmetallic contact area
The polysilicon membrane with different levels of doping, different-thickness is formed, the window of metallization process is greatly expanded.This is practical new
The technological merit that type embodies are as follows: 1) extend the magnetic tape trailer of Metal contact regions doped polysilicon layer, increase foreign atom in crystalline silicon
The depth of middle diffusion reduces the compound of Metal contact regions；2) doped polysilicon layer of Metal contact regions is heavy doping, can be with
The contact resistance of metal and semiconductor is significantly reduced, ohmic loss is reduced；3) DOPOS doped polycrystalline silicon of nonmetallic contact area is kept
Layer magnetic tape trailer is shallower, reduces the compound of nonmetallic contact area；4) simple process, the first polysilicon region and the second polysilicon region
N+ doped polysilicon layer by once doping can be completed, be suitble to large-scale production.In terms of comprehensive, the utility model can be shown
Writing, which reduces metal, contacts compound and ohmic loss, improves the open-circuit voltage and transfer efficiency of battery, and the technology of use is applicable in
In scale of mass production.
Detailed description of the invention
Fig. 1 is the structure chart of the passivation solar battery of the type metal electrode of the utility model embodiment.
Fig. 2 is that the passivation solar battery n+ doped polysilicon layer of the type metal electrode of the utility model embodiment measures
Doping curve graph.
In figure, N-type crystalline silicon matrix 1, p+ doping emitter layer 2, tunnel oxide 3, n+ doped polysilicon layer 5, first
Polysilicon region 51, the second polysilicon region 52, DOPOS doped polycrystalline silicon magnetic tape trailer layer 6, the second magnetic tape trailer region 61, first band tail region domain
62, back passivated reflection reducing penetrates film 7, and preceding passivated reflection reducing penetrates film 8, n+ metal electrode 9, p+ metal electrode 10；
The doping concentration N1 of first polysilicon region, the doping concentration N2 of the second polysilicon region, the first polysilicon region
Thickness D1, the thickness D2 of the second polysilicon region, the thickness D11, the thickness D22 in the second magnetic tape trailer region in first band tail region domain.
Specific embodiment
The utility model is described in detail below in conjunction with embodiment and attached drawing, it should be pointed out that described
Embodiment be intended merely to facilitate the understanding to the utility model, and do not play any restriction effect to it.
A kind of passivation solar battery of type metal electrode of the present embodiment, including N-type crystalline silicon matrix 1, N-type crystal
The back surface of silicon substrate 1 successively penetrates film 7, n+ metal electrode 9 including n+ doped polysilicon layer 5, back passivated reflection reducing from inside to outside；
N-type crystalline silicon matrix 1 is formed with DOPOS doped polycrystalline silicon magnetic tape trailer layer 6 close to the side of n+ doped polysilicon layer 5.
The depth that the magnetic tape trailer of polysilicon doping, i.e. foreign atom are spread in crystalline silicon contacts compound size to metal
It plays a decisive role.Result of study shows that magnetic tape trailer is thicker, and metal contact is compound lower；When magnetic tape trailer very little, metal contact
Region is complex as 400-1000fA/cm2, when magnetic tape trailer is 0.3 μm, the compound of Metal contact regions is reduced to~200fA/cm2。
In this way, increasing the magnetic tape trailer thickness of polysilicon layer, increase the depth that foreign atom is spread in crystalline silicon, reduces Metal contact regions
It is compound, improve the Generation Rate of solar battery.
Wherein, DOPOS doped polycrystalline silicon magnetic tape trailer layer 6 includes the first band tail region domain 62 and the second magnetic tape trailer region 61 being arranged alternately, the
One magnetic tape trailer region, 62 thickness is greater than the thickness in the second magnetic tape trailer region 61, and the corresponding first band tail region domain 62 of n+ metal electrode 9 is arranged.
The increase of magnetic tape trailer depth can also increase accordingly the compound of passive area, need control strip in the optimization process of battery
The depth of tail carrys out the recombination losses of budget metals contact area and nonmetallic contact area.It is mixed in this way, extending Metal contact regions
The magnetic tape trailer of miscellaneous polysilicon layer increases the depth that foreign atom is spread in crystalline silicon, reduces the compound of Metal contact regions, improves
The Generation Rate of solar battery keeps the doped polysilicon layer magnetic tape trailer of nonmetallic contact area shallower, reduces nonmetallic contact zone
Domain it is compound, further increase the Generation Rate of solar battery.
Wherein, n+ doped polysilicon layer 5 includes the first polysilicon region 51 and the second polysilicon region 52, the first polysilicon
Thickness of the thickness in region 51 less than the second polysilicon region 52；First polysilicon region 51 correspondence first band tail region 62, second
Polysilicon region 52 corresponds to the second magnetic tape trailer region 61.
Wherein, the doping concentration of the first polysilicon region 51 is greater than the doping concentration of the second polysilicon region 52.In this way,
N+ doped polysilicon layer and DOPOS doped polycrystalline silicon magnetic tape trailer layer, the first polysilicon region can be formed simultaneously when being doped to polysilicon layer
It can be completed with the n+ doped polysilicon layer of the second polysilicon region by once doping, simple process is suitble to large-scale production.
Wherein, 5 growth pattern of n+ doped polysilicon layer be low-pressure chemical vapor deposition it is intrinsic be mixed with the more of microcrystal silicon phase
Crystal silicon.The mode of doping is ion implanting phosphorus atoms, phosphorus diffusion, normal pressure chemical vapor phase deposition phosphorosilicate glass, foreign atom activation
Later, the first polysilicon region 51 with a thickness of 50~300nm, resistance value is 10~60 Ω/sq；
Second polysilicon region 52 with a thickness of 150~500nm, resistance value is 30~200 Ω/sq.
It wherein, further include tunnel oxide 3 between the back surface of N-type crystalline silicon matrix 1 and n+ doped polysilicon layer 5.
Tunnel oxide passive metal contact structures are made of the polysilicon layer of one layer of ultra-thin tunnel oxide and doping,
This structure applies to crystal-silicon solar cell, obtains 26.1% battery conversion efficiency.The contact of tunnel oxide passive metal
Structure, which both can be used for n-Si substrate, can be used for p-Si substrate, can obtain in Metal contact regions lower than 10fA/cm2's
J0Value, while contact performance is good, contact resistivity is lower than 10m Ω cm2。
Wherein, tunnel oxide 3 with a thickness of 0.5~2.5nm；Material is silica or titanium dioxide, titanium dioxide
The preparation method of silicon is thermal oxide, HNO3Oxidation, O3Oxidation, atomic layer deposition etc., the preparation method of titanium dioxide are atomic layer deposition
Area method.
Wherein, the front surface of N-type crystalline silicon matrix 1 successively includes that p+ adulterates emitter layer 2, preceding passivated reflection reducing from inside to outside
Penetrate film 8, p+ metal electrode 10.
Wherein, p+ adulterate emitter layer 2 using boron diffusion method preparation, the standby emitter sheet resistance value of diffusion be 60~
200 Ω/sq, preferably sheet resistance value are 80~140 Ω/sq.
Wherein, n+ metal electrode 9 and p+ metal electrode 10 are " H " type grid line, main grid spaced set 4~12, wide
100~800 μm of degree, is highly 10~40 μm；Secondary grid spaced set 90~120, width are 20~60 μm, highly for 10~
40μm。
Wherein, it is stack membrane that front surface passivated reflection reducing, which penetrates film, for the group both in aluminium oxide, silica, silicon nitride
It closes；Back surface passivation antireflection film is monofilm or stack membrane, is the combination of silica, silicon nitride or both.
Finally it should be noted that above embodiments are only to illustrate the technical solution of the utility model, rather than to this reality
With the limitation of novel protected range, although being explained in detail referring to preferred embodiment to the utility model, this field it is general
Lead to it will be appreciated by the skilled person that can be with the technical solution of the present invention is modified or equivalently replaced, without departing from this
The spirit and scope of utility model technical solution.
Claims (9)
1. a kind of passivation solar battery of type metal electrode, which is characterized in that including N-type crystalline silicon matrix, the N-type is brilliant
The back surface of body silicon substrate successively penetrates film, n+ metal electrode including n+ doped polysilicon layer, back passivated reflection reducing from inside to outside；
The N-type crystalline silicon matrix is formed with DOPOS doped polycrystalline silicon magnetic tape trailer layer close to the side of the n+ doped polysilicon layer.
2. a kind of passivation solar battery of type metal electrode according to claim 1, which is characterized in that the doping
Polysilicon magnetic tape trailer layer includes the first band tail region domain being arranged alternately and the second magnetic tape trailer region, and the first band tail area thickness is greater than
The thickness in second magnetic tape trailer region, the n+ metal electrode correspond to the setting of first band tail region domain.
3. a kind of passivation solar battery of type metal electrode according to claim 2, which is characterized in that the n+ mixes
Miscellaneous polysilicon layer includes the first polysilicon region and the second polysilicon region, and the thickness of first polysilicon region is less than described
The thickness of second polysilicon region；First polysilicon region corresponds to the first band tail region, second polysilicon region
Corresponding second magnetic tape trailer region.
4. a kind of passivation solar battery of type metal electrode according to claim 3, which is characterized in that described first
The doping concentration of polysilicon region is greater than the doping concentration of second polysilicon region.
5. a kind of passivation solar battery of type metal electrode according to claim 4, which is characterized in that described first
Polysilicon region with a thickness of 50~300nm, square resistance is 10~60 Ω/sq；
Second polysilicon region with a thickness of 150~400nm, square resistance is 30~200 Ω/sq.
6. a kind of passivation solar battery of type metal electrode according to claim 1, which is characterized in that the N-type
It further include tunnel oxide between the back surface of crystal silicon substrate and the n+ doped polysilicon layer.
7. a kind of passivation solar battery of type metal electrode according to claim 6, which is characterized in that the tunnelling
Oxide layer with a thickness of 0.5~2.5nm.
8. a kind of passivation solar battery of type metal electrode according to claim 1, which is characterized in that the N-type
The front surface of crystal silicon substrate successively includes p+ doping emitter layer from inside to outside, preceding passivated reflection reducing penetrates film and p+ metal is electric
Pole.
9. a kind of passivation solar battery of type metal electrode according to claim 8, which is characterized in that the n+ gold
Belong to electrode and p+ metal electrode is " H " type grid line, main grid spaced set 4~12,100~800 μm of width, be highly 10
~40 μm；Secondary grid spaced set 90~120, width are 20~60 μm, are highly 10~40 μm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114242803A (en) * | 2022-02-25 | 2022-03-25 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN114695591A (en) * | 2020-12-25 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer, silicon wafer textured structure and preparation method thereof |
| CN114843349A (en) * | 2020-10-30 | 2022-08-02 | 浙江晶科能源有限公司 | Solar cell |
-
2018
- 2018-12-28 CN CN201822233558.0U patent/CN209199953U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114843349A (en) * | 2020-10-30 | 2022-08-02 | 浙江晶科能源有限公司 | Solar cell |
| US11901467B2 (en) | 2020-10-30 | 2024-02-13 | Zhejiang Jinko Solar Co., Ltd. | Solar cell |
| CN114695591A (en) * | 2020-12-25 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer, silicon wafer textured structure and preparation method thereof |
| CN114695591B (en) * | 2020-12-25 | 2024-03-12 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer, silicon wafer textured structure and preparation method thereof |
| CN114242803A (en) * | 2022-02-25 | 2022-03-25 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN114242803B (en) * | 2022-02-25 | 2022-08-12 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
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Commission number: 5W129993 Conclusion of examination: Declare claims 1-2 and 6-9 of utility model number 201822233558.0 invalid, and continue to maintain the validity of the patent on the basis of claims 3-5 Decision date of declaring invalidation: 20230504 Decision number of declaring invalidation: 561199 Denomination of utility model: A passive solar cell with printed metal electrodes Granted publication date: 20190802 Patentee: JOLYWOOD (TAIZHOU) SOLAR TECHNOLOGY Co.,Ltd. |
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| IP01 | Partial invalidation of patent right |