CN104269457A - n-type IBC silicon solar cell manufacturing method based on ion implantation technology - Google Patents
n-type IBC silicon solar cell manufacturing method based on ion implantation technology Download PDFInfo
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- CN104269457A CN104269457A CN201410450314.1A CN201410450314A CN104269457A CN 104269457 A CN104269457 A CN 104269457A CN 201410450314 A CN201410450314 A CN 201410450314A CN 104269457 A CN104269457 A CN 104269457A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 51
- 239000010703 silicon Substances 0.000 title claims abstract description 51
- 238000005468 ion implantation Methods 0.000 title claims abstract description 18
- 238000005516 engineering process Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052796 boron Inorganic materials 0.000 claims abstract description 11
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 9
- 229910004205 SiNX Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- 239000003637 basic solution Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 238000005457 optimization Methods 0.000 description 6
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
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Abstract
The invention discloses an n-type IBC silicon solar cell manufacturing method based on the ion implantation technology. Doping between n+ areas and p+ areas is achieved through combination between a boron diffusion mode and a boron ion implantation mode, and through the technology, current leakage of tunnel junctions of cells can be effectively avoided without performing isolation on the n+/p+ interface of the back side.
Description
Technical field
The invention belongs to technical field of solar cells, be specifically related to a kind of N-shaped IBC silicon solar cell manufacture method based on ion implantation technology.
Background technology
Solar energy can be converted into electric energy by solar cell, it is the effective means utilizing solar energy resources, due in use can not harmful substance be produced, so solar cell gains great popularity in solution energy and environment problem, there are good market prospects, it is the optimal energy that solar energy is also described as, and is the valuable source that solution human society is depended on for existence and development.
The solar cell material of current main flow does substrate by P-type silicon, spread formed by high temperature phosphorous
pnknot, but in p-type silion cell acceptor boron oxygen on impact there is the phenomenon of photo attenuation, and N-shaped silicon materials are relative to p-type silicon materials, due to its to metal impurities and many nonmetal defects insensitive, and there is in body less boron oxygen pair, so be higher than p-type crystal silicon battery in the stability of performance, the minority carrier life time of N-shaped battery is higher simultaneously, and this lays a good foundation for preparing more efficient solar cell.
Back of the body knot back contacts solar cell started as far back as 1977 the sight line entering people, still there is the focus of solar cell industry research up to now, relative to the silion cell of routine, the back of the body ties the with the obvious advantage of back contacts solar cell, mainly can show the following aspects:
1. back of the body knot back contacts solar cell is using N-shaped crystalline silicon as substrate, and minority carrier life time is high, is applicable to prepare high-efficiency battery, is specially adapted to back of the body knot back contacts solar cell this
pntie the battery structure at back surface, because the photo-generated carrier resulting from front surface must move to battery back surface
pnknot just can be utilized, and higher minority carrier life time is the guarantee reducing photo-generated carrier compound in solar battery surface and body;
2. the Boron contents of N-type matrix is extremely low, and therefore boron oxygen does not have p-type basis material obvious to the photo attenuation caused, more obvious to the improved efficiency of assembly after encapsulation;
3. the front of back of the body knot back contacts solar cell does not have electrode, decreases shading-area, increases photogenerated current, the back side being distributed in battery of the positive negative battery submission finger-like of battery;
4. back of the body knot back contacts solar cell is easy to encapsulation, compared with conventional batteries, without the need to the negative pole of front a slice being intersected the positive pole receiving rear a slice, is easy to operation.
Summary of the invention
Goal of the invention: for above-mentioned prior art Problems existing and deficiency, the object of this invention is to provide a kind of N-shaped IBC silicon solar cell manufacture method based on ion implantation technology, the method is safe and reliable, compatible with traditional solar cell production line, is applicable to the product line upgrading of current solar cell.
Technical scheme: the invention discloses a kind of N-shaped IBC silicon solar cell manufacture method based on ion implantation technology, comprise the following steps:
(1) choose the N-shaped silicon substrate of resistivity at 3-12 Ω cm, and remove the damage layer of silicon chip surface with chemical corrosion, then carry out two-sided making herbs into wool;
(2) two-sided phosphorus diffusion;
(3) p is removed by the mode of printing corrosivity slurry or laser-induced thermal etching
+the phosphorosilicate glass of defined range;
(4) adopt organic basic solution to p
+defined range carries out selectivity polishing, and removes p
+the n of defined range
+diffusion layer;
(5) remove the phosphorosilicate glass of front surface, then adopt acid solution to etch front surface, the front surface sheet resistance after etching controls at 100 Ω/-200 Ω/;
(6) remove the phosphorosilicate glass of n-type silicon chip back surface, and carry out RCA cleaning;
(7) optionally carry out boron injection at n-type silicon chip back side P+ defined range, boron injection rate is 1x10
15cm
-3-5x10
16cm
-3;
(8) anneal: annealing temperature controls at 900 DEG C-1000 DEG C, and annealing time controls at 20-90min, simultaneously in front surface and the back surface formation oxide layer of N-type silicon chip, described oxidated layer thickness is at 3-15nm;
(9) deposit passivation layer: in the two-sided deposition of carrying out SiNx of N-type silicon chip;
(10) the deielectric-coating perforate in rear-face contact region;
(11) at the back side n of n-type silicon chip
++and p
++contact area is type metal slurry also sintering formation ohmic contact respectively;
Wherein, the organic basic solution in step (4) is the mixed liquor of TMAH or TMAH and other alkaline solutions, and etching temperature is at 60-80 DEG C, and etch period is at 10min-30min;
Acid solution in step (5) is the mixed solution of hydrofluoric acid, nitric acid.
The present invention realizes n by adopting boron diffusion and boron ion implantation mode to combine
+, p
+the doping in region, and this technique is without the need to n overleaf
+/ p
+interface isolates, and can effectively avoid the tunnel junction of battery to leak electricity.
As further optimization of the present invention, the diffused sheet resistance in step of the present invention (2) is 40 Ω/-100 Ω/.
As further optimization of the present invention, in step of the present invention (5), hydrofluoric acid, nitric acid, water mix with volume ratio 1:30:300.
As further optimization of the present invention, in step of the present invention (9), the thickness of front surface S iNx is 65nm-75nm.
As further optimization of the present invention, in step of the present invention (9), back side SiNx thickness is 80nm-150nm.
As further optimization of the present invention, adopt laser or printing corrosivity slurry to complete deielectric-coating perforate in step of the present invention (5), if back surface adopts burn type Metal slurry, this step can be saved.
As further optimization of the present invention, the back surface p in step of the present invention (8) after annealing
+the sheet resistance in region is between 50 Ω/-100 Ω/.
Beneficial effect: the present invention compared with prior art, the present invention adopts N-shaped crystal silicon chip as basis material, its minority carrier life time is high and photo attenuation is little, to preparing battery and package assembling has greater advantage, the present invention adopts the front and rear surfaces of passivating film passivation cell effectively can reduce the recombination rate of surperficial minority carrier, improve surperficial minority carrier life time, and prepare antireflective film at front surface and the back side, the reflection of photon can be reduced, increase the absorption of surface to photon, increase the conversion efficiency of photogenerated current and then increase battery.Battery positive and negative electrode of the present invention is all made in the back side, less shading-area, increases photogenerated current, can collect the electric current that silicon chip produces better, forms good ohmic contact between metal and silicon chip simultaneously.
The present invention possess skills simple ripe, ion implantation technique precisely, the feature such as alternative doping, by control back side p
+and n
+the doping content in region, without the need to carrying out the n at the back side
+/ p
+the isolation at interface, effectively can avoid the generation of the situations such as the tunnel junction electric leakage of battery, greatly reduce the complexity of cell making process.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
The present invention is illustrated further below in conjunction with drawings and Examples.
As described in Figure 1, solar cell of the present invention is from top to bottom sequentially laminated with front surface passivation layer 5, front surface n+ region 2, N-shaped silicon substrate 1, back surface n++ doped region 3, back surface p+ doped region 4, back surface passivation layer 6, back surface n++ contact electrode 7 and back surface p+ contact electrode 8.
Embodiment 1:
The present embodiment comprises the following steps:
1. select resistivity at the N-shaped silicon substrate of 3-5 Ω cm, its minority carrier life time is greater than 500us, adopts chemical corrosion
remove silicon chipthe damage layer on surface, and two-sided making herbs into wool.
Two-sided phosphorus diffusion: diffused sheet resistance is 60 Ω/.
3. p overleaf
+defined range printing corrosivity slurry, removes p
+the phosphorosilicate glass of defined range.
4. adopt the TMAH solution of 20% at 60 DEG C, to carry out selective corrosion characteristic, to p
+defined range carries out polishing, etching time 30min.
5. remove the phosphorosilicate glass of n-type silicon chip front surface, adopt volume ratio to be the hydrofluoric acid of 1:30:300, nitric acid and water etch n-type silicon chip front surface, and the front surface sheet resistance after etching is 140 Ω/.
6. remove back side phosphorosilicate glass, and carry out RCA cleaning.
7. utilize the characteristic of the Selective implantation of ion implantation, at the p at the n-type silicon chip back side
+defined range carries out boron injection, and injection rate is 1x10
15cm
-3.
8. anneal 30min at the temperature of 950 DEG C, simultaneously grows the thin SiO of one deck respectively at the front surface of N-type silicon chip and back surface
2layer, SiO
2layer thickness is 10nm, and after annealing, the sheet resistance in P+ region, the back side is 80 Ω/.
9. at the SiNx passivation layer of N-type silicon chip front surface deposition 75nm, at the SiNx passivation layer of the backside deposition 120nm of N-type silicon chip.
10. prepare electrode:
At the N++ region, the back side of n-type silicon chip printing silver slurry, and dry;
P overleaf
+region printing aluminium paste, and sintering forms ohmic contact.
Embodiment 2
The present embodiment comprises the following steps:
1. select resistivity in the N-type silicon substrate of 5-12 Ω cm, its minority carrier life time is greater than 500us, and the damage layer of silicon chip surface is removed in chemical corrosion, and two-sided making herbs into wool.
2. two-sided phosphorus diffusion: diffused sheet resistance is 80 Ω/.
3. utilize the phosphorosilicate glass of laser ablation P+ defined range.
4. adopt the TMAH solution of 25% at 70 DEG C, to carry out selective corrosion characteristic, to p
+defined range carries out polishing, and etching time is 20min.
5. remove the phosphorosilicate glass of n-type silicon chip front surface, adopt the hydrofluoric acid of 1:30:300, nitric acid and water etch n-type silicon chip front surface at 25 DEG C, and etch period is 20min, and the front surface sheet resistance after etching is 130 Ω/.
6. remove back side phosphorosilicate glass, and carry out RCA cleaning.
7. utilize the characteristic of the Selective implantation of ion implantation, at the p at the n-type silicon chip back side
+defined range carries out boron injection, and injection rate is 5x10
15cm
-3.
8. anneal 40min at the temperature of 950 DEG C, simultaneously grows the thin SiO of one deck respectively at the front surface of n-type silicon chip and back surface
2layer, SiO
2layer thickness is 13nm, and after annealing, the sheet resistance in P+ region, the back side is 70 Ω/.
9. at the SiNx passivation layer of N-type silicon chip front surface deposition 72nm, at the SiNx passivation layer of the backside deposition 110nm of N-type silicon chip.
10. prepare electrode:
At the back side n of N-type silicon chip
++region printing silver slurry, and dry;
P overleaf
+region printing aluminium paste, and sintering forms ohmic contact.
Claims (7)
1., based on the N-shaped IBC silicon solar cell manufacture method of ion implantation technology, it is characterized in that: comprise the following steps:
(1) choose the N-shaped silicon substrate of resistivity at 3-12 Ω cm, and remove the damage layer of silicon chip surface with chemical corrosion, then carry out two-sided making herbs into wool;
(2) two-sided phosphorus diffusion;
(3) p is removed by the mode of printing corrosivity slurry or laser-induced thermal etching
+the phosphorosilicate glass of defined range;
(4) adopt organic basic solution to p
+defined range carries out selectivity polishing, and removes p
+the n of defined range
+diffusion layer;
(5) remove the phosphorosilicate glass of front surface, then adopt acid solution to etch front surface at 25 DEG C, etching period is 5min-20min, and the front surface sheet resistance after etching controls at 100 Ω/-200 Ω/;
(6) remove the phosphorosilicate glass of n-type silicon chip back surface, and carry out RCA cleaning;
(7) at n-type silicon chip back side p
+defined range optionally carries out boron injection, and boron injection rate is 1x10
15cm
-3-5x10
16cm
-3;
(8) anneal: annealing temperature controls at 900 DEG C-1000 DEG C, and annealing time controls at 20-90min, simultaneously in front surface and the back surface formation oxide layer of n-type silicon chip, described oxidated layer thickness is at 3-15nm;
(9) deposit passivation layer: in the two-sided deposition of carrying out SiNx of n-type silicon chip;
(10) back side p-type contact region definition: the passivating film being etched away back side n-type region by the method for laser or printing corrosivity slurry; ;
(11) at the back side n of n-type silicon chip
++and p
++region is type metal slurry also sintering formation ohmic contact respectively;
Acid solution in step (5) is the mixed solution of hydrofluoric acid, nitric acid.
2. the N-shaped IBC silicon solar cell manufacture method based on ion implantation technology according to claim 1, is characterized in that: the diffused sheet resistance in described step (2) controls at 40 Ω/-100 Ω/.
3. the N-shaped IBC silicon solar cell manufacture method based on ion implantation technology according to claim 1, is characterized in that: in described step (5), hydrofluoric acid, nitric acid, water mix with volume ratio 1:30:300.
4. the N-shaped IBC silicon solar cell manufacture method based on ion implantation technology according to claim 1, is characterized in that: in described step (9), the thickness of front surface S iNx is 65nm-75nm.
5. the N-shaped IBC silicon solar cell manufacture method based on ion implantation technology according to claim 4, is characterized in that: in described step (9), back side SiNx thickness is 80nm-150nm.
6. the N-shaped IBC silicon solar cell manufacture method based on ion implantation technology according to claim 1, is characterized in that: adopt laser or printing corrosivity slurry to complete passivating film perforate in described step (10).
7. the N-shaped IBC silicon solar cell manufacture method based on ion implantation technology according to claim 1, is characterized in that: the back surface p in described step (8) after annealing
+the sheet resistance in region controls between 50 Ω/-100 Ω/.
Priority Applications (1)
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|---|---|---|---|
| CN201410450314.1A CN104269457B (en) | 2014-09-05 | 2014-09-05 | A kind of N-type IBC silicon solar cell manufacture method based on ion implantation technology |
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|---|---|---|---|
| CN201410450314.1A CN104269457B (en) | 2014-09-05 | 2014-09-05 | A kind of N-type IBC silicon solar cell manufacture method based on ion implantation technology |
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|---|---|
| CN104269457A true CN104269457A (en) | 2015-01-07 |
| CN104269457B CN104269457B (en) | 2016-08-24 |
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ID=52160964
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784152A (en) * | 2016-12-29 | 2017-05-31 | 英利能源（中国）有限公司 | A kind of preparation method of IBC batteries |
| CN106784163A (en) * | 2017-01-20 | 2017-05-31 | 英利能源（中国）有限公司 | The preparation method of solar cell |
| CN107425086A (en) * | 2017-05-18 | 2017-12-01 | 阳光中科（福建）能源股份有限公司 | A kind of ion implantation makes the preparation technology of N-type PERT double-side solar cells |
| CN107785456A (en) * | 2017-09-27 | 2018-03-09 | 泰州中来光电科技有限公司 | A kind of preparation method of back contact solar cell |
| CN107833931A (en) * | 2017-11-02 | 2018-03-23 | 晶科能源有限公司 | Preparation method of solar battery |
| CN111029438A (en) * | 2019-12-04 | 2020-04-17 | 江苏杰太光电技术有限公司 | Preparation method of N-type passivated contact solar cell |
| CN111162145A (en) * | 2020-02-26 | 2020-05-15 | 泰州中来光电科技有限公司 | Passivated contact solar cell with selective emitter structure and preparation method thereof |
| CN111211199A (en) * | 2020-01-17 | 2020-05-29 | 陕西优顺赛辉新能源科技有限公司 | Preparation method of efficient IBC battery |
| CN113284982A (en) * | 2021-05-28 | 2021-08-20 | 浙江爱旭太阳能科技有限公司 | Processing technology of IBC battery with passivation contact structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101540350A (en) * | 2009-04-30 | 2009-09-23 | 中山大学 | Process for preparing back point-contact crystalline-silicon solar cells |
| CN101777603A (en) * | 2009-01-08 | 2010-07-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for manufacturing back contact solar energy batteries |
| CN102738264A (en) * | 2011-04-15 | 2012-10-17 | 上海凯世通半导体有限公司 | Doping unit, doping wafer, doping method, solar battery and manufacturing method |
| KR20130088643A (en) * | 2012-01-31 | 2013-08-08 | 현대중공업 주식회사 | Method for fabricating back contact solar cell |
-
2014
- 2014-09-05 CN CN201410450314.1A patent/CN104269457B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101777603A (en) * | 2009-01-08 | 2010-07-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for manufacturing back contact solar energy batteries |
| CN101540350A (en) * | 2009-04-30 | 2009-09-23 | 中山大学 | Process for preparing back point-contact crystalline-silicon solar cells |
| CN102738264A (en) * | 2011-04-15 | 2012-10-17 | 上海凯世通半导体有限公司 | Doping unit, doping wafer, doping method, solar battery and manufacturing method |
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