CN106784163A - The preparation method of solar cell - Google Patents
The preparation method of solar cell Download PDFInfo
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- CN106784163A CN106784163A CN201710042576.8A CN201710042576A CN106784163A CN 106784163 A CN106784163 A CN 106784163A CN 201710042576 A CN201710042576 A CN 201710042576A CN 106784163 A CN106784163 A CN 106784163A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 230000004224 protection Effects 0.000 claims abstract description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 7
- 235000008216 herbs Nutrition 0.000 claims abstract description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 6
- 210000002268 wool Anatomy 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 4
- 238000000608 laser ablation Methods 0.000 claims abstract description 4
- 238000007650 screen-printing Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 9
- 238000012360 testing method Methods 0.000 claims description 8
- -1 phosphonium ion Chemical class 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 238000003892 spreading Methods 0.000 claims description 5
- 230000007480 spreading Effects 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 239000012190 activator Substances 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 12
- 238000010248 power generation Methods 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract description 3
- 238000000137 annealing Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 13
- 230000005611 electricity Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 8
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- 239000011521 glass Substances 0.000 description 7
- 238000007639 printing Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
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- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of preparation method of solar cell, belong to solar cell preparing technical field, mainly include the following steps that：Cleaning；Making herbs into wool；Boron spreads；Region ion implanting, makes the back side be divided into the N-type region domain of pectination and the p type island region domain of pectination；Annealing；Laser ablation, removes the PN junction of silicon chip surrounding, so as to front be separated with the PN junction at the back side, makes front for main battery PN junction, and the back side is primary cell or protection diode PN junction；Using PECVD, in silicon chip double-sided coating, antireflective coating is formed；Silk-screen printing is carried out at front side of silicon wafer, the back side, front electrode, back side first electrode and the back side second electrode of battery are formed through oversintering.The present invention is avoided that influence of the bypass diode to solar cell and component light-receiving area, while can solve the problem that the problem of solar cell hot spot effect, improve generating efficiency reduces power generation loss, extends the assembly operating life-span.
Description
Technical field
The invention belongs to solar cell preparing technical field, more particularly to a kind of preparation method of solar cell.
Background technology
Photovoltaic module is the important component of photovoltaic system, and solar cell is the core of photovoltaic module.Solar-electricity
The design feature and stability in pond, reliability, differentiation directly affect the working condition of photovoltaic module and setting for different occasions
Meter application, decides the packaging technology and technical performance of component.
The photovoltaic module feature of traditional domestic and international production is：（1）Photovoltaic module product is by battery strings, convergent belt, envelope
A few part compositions of package material, terminal box；（2）Convergent belt couples together battery strings, then is connected with terminal box；（3）Encapsulating material
Including glass, backboard, EVA, edge frame made of aluminum profiles, silica gel or adhesive tape, battery strings, convergent belt are sealed；（4）Terminal box is built-in
There is bypass diode.
During installation, component is coupled together by the connecting line on component, reach component square formation, formed
Power generation part in solar power system.
The reason for current terminal box is built with bypass diode is as follows：
During assembly operating, if a certain solar battery sheet in component is blocked or breaks down, solar cell piece
The effect of solar cell is just no longer played, solar cell hot spot effect occurs.To solve this problem, terminal box built with
Bypass diode, makes bypass diode with battery series-parallel connection.There is event when solar battery sheet is blocked or breaks down
During barrier, by the corresponding battery strings of bypass diode short circuit, it is to avoid other solar cells can not be exported, and influence generating effect.
Not enough problem is that a piece of solar cell goes wrong or is blocked, and causes whole string solar cell to be bypassed,
The loss of component power output is larger.Meanwhile, in terminal box in the work of diode actual moving process, due to the diode work(for selecting
The limitation of rate, can release amount of heat, after burning terminal box, make component short circuit or open circuit, it is impossible to power output.
The crystal-silicon solar cell structure of traditional domestic and international production at present is：Only one of which PN junction, arranges without other protections
Apply.Can only simply set further, since the simple structure of crystal-silicon solar cell so that in the design process of photovoltaic module
It is calculated as the series connection of single battery, it is impossible to play the effect of multiple power supplies.
At present, the solar cell for producing both at home and abroad, either polycrystal silicon cell, or monocrystalline silicon battery；Its structural principle
It is made up of a PN junction, referring to shown in Fig. 1-Fig. 3.Its basic production technique is：
Cleaning → making herbs into wool → diffusion → etching → PECVD → printing → sintering → test → sorting.
The shortcoming of this production technology is：Solar cell is made up of a PN junction, simple structure, without defencive function,
Inconvenience is applied to the product design of multi-functional demand；Using the photovoltaic module product of such battery production in actual motion, one
Piece solar cell goes wrong or is blocked, and causes whole string solar cell to be bypassed, and the loss of component power output is larger；There is this electricity
The component of pond production, in its terminal box in diode operation, releases amount of heat, after burning, makes component short circuit or open circuit, it is impossible to
Power output.
The preparation method for describing a kind of crystal silicon cell with bypass diode is had been reported that, Main is as follows：
Different slurries are locally printed in cell piece using the printing screen for designing, recycling laser grooving technique is on cell piece
Isolated, this part region is formed diode property；Independent extraction electrode afterwards.This kind of battery has four electrodes（Battery,
Diode each pair both positive and negative polarity）.In module production process, individually connect to be formed by welding.
Its technical disadvantages is as follows：Bypass diode occupies certain area of solar cell in solar cell, so as to have
Effect area reduces 1%-10%, influences generated energy；The bypass diode is also in fact a PN junction, only polarity and battery phase
Instead, it may have the effect of battery.Sunshine also irradiates so-called bypass diode while solar cell is irradiated, it
Certain electricity can be sent, its electric current is opposite with battery current.Can be generated heat at any time in actual motion, unlike terminal box in two poles
The pipe simply ability front conducting heating when battery is blocked.Which decrease the Comprehensive service life of whole component；Due to battery
Substrate be constitute PN junction a part, the laser grooving technique that it is utilized can't be completely separable with diode by battery.This
The VA characteristic curve extreme difference of sample battery, it is shown in Figure 4, general action can only be played；Due to there is four strip electrodes, for by it
The component of production, welding procedure is more complicated, and welding after outward appearance unsightly.
The preparation method of the production technology and photovoltaic module that describe a kind of solar cell of integrated diode is had been reported that,
Main is as follows：Etching → second glue spreading → bis- of a cleaning → making herbs into wool → One Diffusion Process → secondary diffusion → time gluing → once
Secondary etching → clean again → PECVD → printing → sintering → test → sorting.Its technical disadvantages is as follows：The battery process needs two
Secondary diffusion, second glue spreading, secondarily etched technique, complex process；Using coating technique, cost increases more；Local diode face
Product is smaller, and power output tool has certain limitations；Back can not generate electricity, and not have the second electric current, voltage output.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of preparation method of solar cell, it is to avoid bypass diode
Influence to solar cell and component light-receiving area, while can solve the problem that the problem of solar cell hot spot effect, improves hair
Electrical efficiency, reduces power generation loss, extends the assembly operating life-span.
In order to solve the above technical problems, the technical solution used in the present invention is：A kind of preparation method of solar cell,
Comprise the following steps：
First, it is N-type silicon chip from silicon chip；
2nd, clean：Removal silicon chip surface stains；
3rd, making herbs into wool：Silicon chip surface is set to form matte；
4th, spread：It is boron diffusion technique, two surfaces and surrounding generation p type island region domain is just being carried on the back in silicon chip；
5th, region ion implanting：By target control, phosphonium ion is injected in the pectination region of silicon chip back side after the diffusion, it is right to make
Answer the boron in region to neutralize, continue to inject phosphonium ion, N-type region domain is formed again, the N-type region domain is connected with the N-type region domain of silicon chip, from
And the back side is divided into the N-type region domain of pectination and the p type island region domain of pectination；
6th, anneal：Eliminate implant damage and the activator impurity for spreading in advance；
7th, laser ablation：The PN junction of silicon chip surrounding is removed, so as to front be separated with the PN junction at the back side, makes front be main battery
PN junction, the back side is primary cell or protection diode PN junction；
8th, PECVD chemical vapor depositions：In silicon chip double-sided coating, antireflective coating is formed；
9th, print, sinter：Silk-screen printing is carried out at front side of silicon wafer, the back side, front electrode, the back side of battery are formed through oversintering
First electrode and back side second electrode；
Tenth, test, sort：Battery to preparing carries out testing, sorting filing packaging.
Further, the silicon chip of selection is polysilicon chip or monocrystalline silicon piece.
Further, the front electrode is drawn by being divided into the main gate line of the side of battery front side two, the back side the
One electrode and the back side second electrode are drawn by being divided into the main gate line of the side of cell backside two.
Further, the pectination N-type region domain at the back side is the back side second electrode, and the pectination p type island region domain at the back side is described
Back side first electrode, the comb cross arrangement in the N-type region domain and p type island region domain.
Further, impurity concentration of the impurity concentration in the N-type region domain for being formed again more than N-type silicon chip matrix.
Further, the N-type region domain and the width in p type island region domain that the back side is divided into are equal.
It is using the beneficial effect produced by above-mentioned technical proposal：
（1）Improve security, the reliability of solar cell：The solar battery front side is main battery, for generator unit；The back of the body
Face has difunctional unit, when the unit is used for double glass assemblies, can generating electricity on two sides, the different grades of voltage of output, electric current, two
Power supply can be accomplished not interfere with each other, independent output, when the unit is used for single glass assembly, with protection diode function, and mesh
Preceding crystal-silicon solar cell inside does not have protection location.
（2）By region ion implantation technique so that involved zone resistance reduces, it is easier to forms ohm and connects
Touch, reduce the series resistance of battery, improve the generating efficiency of battery.
（3）Due to generating electricity on two sides, generating efficiency is substantially increased.
（4）The range of application of solar cell is extended, current crystal-silicon solar cell only has one group of output end, can only provide one
Individual electric current, a voltage, are above restricted in application.
（5）The hot spot effect of photovoltaic module is solved, the generating efficiency of component is improved, autoprotection diode is carried on the back in battery
Face, again can according to battery sizes, main gate line how much, arbitrarily devised area, the area is far longer than the face of external diode chip
Product, up to thousands of times；Cell backside is attached to plus diode, in the case of battery is idle, has one equivalent to diode
Very large fin, so fuel factor will not be produced, thoroughly solves solar cell hot spot effect.
（6）Because each battery possesses protection diode function, may be designed to be not required to the component of external bypass diode.
（7）Solve the problems, such as that photovoltaic component terminal box burns, due to there is no diode in terminal box, big calorimetric will not be released
Measure and burn, make whole component short circuit or phenomenon that is breaking and being unable to power output.
（8）The battery production technology is suitable for large-scale production, although region ion implanting link is increased on surface, but
Back up link is a kind of material, reduces original back of the body electric field, the printing complexity of two kinds of different materials of back electrode, Bu Huiying
Production efficiency is rung, is improved on the contrary.
Brief description of the drawings
Fig. 1 is the front schematic view of solar cell in the prior art；
Fig. 2 is the schematic rear view of solar cell in the prior art；
Fig. 3 is the generalized section of silicon chip after diffusion in the prior art；
Fig. 4 is the VA characteristic curve figure of solar cell in the prior art；
Fig. 5 is the schematic diagram of solar cell application provided in an embodiment of the present invention；
Fig. 6 is the schematic diagram of solar cell application provided in an embodiment of the present invention two；
Fig. 7 is the generalized section of silicon chip after solar cell diffusion provided in an embodiment of the present invention；
Fig. 8 is the front schematic view of silicon chip after solar-electricity pool area ion implanting provided in an embodiment of the present invention；
Fig. 9 is the schematic rear view of silicon chip after solar-electricity pool area ion implanting provided in an embodiment of the present invention；
Figure 10 is the generalized section at a in Fig. 9；
Figure 11 is the front schematic view of the silicon chip after solar battery laser etching provided in an embodiment of the present invention；
Figure 12 is the schematic rear view of silicon chip after solar battery laser etching provided in an embodiment of the present invention；
Figure 13 is the generalized section at b in Figure 12；
Figure 14 is the front schematic view of solar cell provided in an embodiment of the present invention；
Figure 15 is the schematic rear view of solar cell provided in an embodiment of the present invention；
Figure 16 is the generalized section at c in Figure 15；
In figure：1st, front electrode；2nd, back side first electrode；3rd, back side second electrode.
Specific embodiment
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
Referring to Fig. 5, Fig. 6, the principle to the preparation method of solar cell provided in an embodiment of the present invention first is said
It is bright as follows：
Battery front side electrode 1：Main battery positive pole；
Back side first electrode 2：Different according to application, electric principle is different；It is secondary when battery applications are to double-sided glass component
Anode；It is protection diode positive pole when battery applications are to one side glass assembly；
Back side second electrode 3：It is main GND and the common output electrode of primary cell negative pole or protection diode negative pole.
The preparation method of solar cell provided in an embodiment of the present invention, comprises the following steps：
First, it is N-type silicon chip from silicon chip；
2nd, clean：Removal silicon chip surface stains；
3rd, making herbs into wool：Silicon chip surface is formed matte, reduce silicon chip reflectivity, be conducive to the absorption of light；
4th, spread：It is boron diffusion technique, two surfaces and surrounding generation p type island region domain is just being carried on the back in silicon chip, referring to Fig. 7；
5th, region ion implanting：By target control, phosphonium ion is injected in the pectination region of silicon chip back side after the diffusion, it is right to make
Answer the boron in region to neutralize, continue to inject phosphonium ion, N-type region domain is formed again, the N-type region domain is connected with the N-type region domain of silicon chip, electricity
The pond back side forms curved PN junction, so that the back side is divided into the N-type region domain of pectination and the p type island region domain of pectination, referring to Fig. 8-Figure 10,
It is easy to extraction electrode；
6th, anneal：Eliminate implant damage and the activator impurity for spreading in advance；
7th, laser ablation：The PN junction of silicon chip surrounding is removed, so as to front be separated with the PN junction at the back side, makes front be main battery
PN junction, the back side is primary cell or protection diode PN junction, referring to Figure 11-Figure 13；
8th, PECVD：In silicon chip double-sided coating, antireflective coating is formed；
9th, print, sinter：Silk-screen printing is carried out at front side of silicon wafer, the back side, the front electrode 1, back side of battery is formed through oversintering
First electrode 2 and back side second electrode 3, referring to Figure 14-Figure 15, there are two electrodes at the back side, and the back side has cell power generation and bypass
The function of diode protection；
Tenth, test, sort：Battery to preparing carries out testing, sorting filing packaging.
It should be understood that in the above-described embodiments, above-mentioned steps are only one of specific embodiment, the size of the sequence number of each step
It is not construed as limiting the invention.
The preparation method of solar cell provided in an embodiment of the present invention, advantage is as follows：
（1）The crystal-silicon solar cell is made up of two parts, and front is main battery, for generator unit.The back side is by with double work(
Can unit, when the unit is used for double glass assembly, can generating electricity on two sides, export different grades of voltage, electric current, two power supplys can be accomplished
Do not interfere with each other, independent output；When the unit is used for single glass assembly, with protection diode function.
（2）By region ion implantation technique so that involved zone resistance reduces, it is easier to forms ohm and connects
Touch, reduce the series resistance of battery, improve the generating efficiency of battery.
（3）Due to generating electricity on two sides, generating efficiency is substantially increased.
（4）Because each battery possesses protection diode function, may be designed to be not required to external bypass diode by design
Component.
（5）Autoprotection diode in cell backside, again can according to battery sizes, main gate line how much, arbitrarily devised area,
The area is far longer than the area of external diode chip, up to thousands of times；Cell backside is attached to plus diode, in battery not
In the case of work, there is a very large fin equivalent to diode, so fuel factor will not be produced, thoroughly solve the sun
Battery hot spot effect.
（6）The battery production technology is suitable for large-scale production, although region ion implanting link is increased on surface, but
Back up link is a kind of material, reduces original back of the body electric field, the printing complexity of two kinds of different materials of back electrode, Bu Huiying
Production efficiency is rung, is improved on the contrary.
Further, the silicon chip of selection is polysilicon chip or monocrystalline silicon piece.
Further, referring to Figure 14, Figure 15, front electrode 1 is drawn by being divided into the main gate line of the side of battery front side two,
Back side first electrode 2 and back side second electrode 3 are drawn by being divided into the main gate line of the side of cell backside two.What the present invention was provided
Cell piece, in both sides, the PN junction of the formation of cell backside is bending to the main gate line of both sides, is effectively separated into rear surface regions
P areas and N areas, are easy to extraction electrode.
Further, referring to Figure 14, Figure 15, the pectination N-type region domain at the back side is the back side second electrode 3, the comb at the back side
Shape p type island region domain is the back side first electrode 2, the comb cross arrangement in N-type region domain and p type island region domain.
Further, the doping concentration in the N-type region domain for being formed again is more than the doping concentration of N-type silicon chip matrix, easily N
Type silicon chip matrix is drawn.
Further, the N-type region domain and the width in p type island region domain that the back side is divided into are equal, it is also possible to not wide.
For ease of understanding, below to term further instruction involved herein.
Ion implantation technique：It is a kind of material surface modifying technology.It is also in semiconductor technology a kind of doping method.It
Be by impurity ionization into ion, with the ion beam incidence of certain energy to silicon sheet material, the atom in ion beam and silicon chip
Or molecule will occur a series of physical and chemistry interaction, incident ion gradually off-energy finally rests on silicon chip
In, and cause silicon chip surface composition, structure and performance to change, so as to obtain new excellent properties.Form the circle of ion beam
The radius of curvature of the vertex of a cone only has the order of magnitude of 10nm.Corresponding silicon chip is commonly called as target.
Photovoltaic module：Also solar cell module, solar panel are, it is the photovoltaic for converting solar energy into electrical energy
Generating product, is a string of batteries for being coupled together solar cell by welding.It is the core in solar power system
Point, the electricity generation system being made from it is generated electricity by photovoltaic module, electric energy is sent in battery and is stored, or band dynamic load work
Make.The design of photovoltaic module will directly determine the quality and cost of whole system.
Solar cell hot spot effect：Refer to solar module under sunlight irradiation, because members are blocked nothing
Method is worked so that covered part is heated up and is far longer than not covered part, causes that temperature is too high the blackening for burning out occurs.Heat
Spot may cause whole battery component to damage, and cause damage.Accordingly, it would be desirable to the immanent cause for causing hot spot is studied, so as to reduce
The possibility that hot spot is formed.The formation of solar cell hot spot is mainly made up of two internal factors, respectively with internal resistance and sun electricity
Pond itself dark current size is relevant.
Terminal box：It is the connection member of photovoltaic module output, it is generally internal by several bypass diodes, connection terminal, box
The parts such as body, lid, connecting line are constituted.
Battery strings：It is a string of batteries for being coupled together solar cell by welding.
The technical scheme that the present invention is provided is described in detail above, application specific case is to the present invention in the present invention
Implementation method be set forth, the explanation of above example is only intended to help and understands the present invention, it is noted that for this skill
For the technical staff in art field, under the premise without departing from the principles of the invention, can also some improvement be carried out to the present invention, these
Improvement is also fallen into the protection domain of the claims in the present invention.
Claims (6)
1. a kind of preparation method of solar cell, it is characterised in that comprise the following steps：
First, the silicon chip selected is N-type silicon chip；
2nd, clean：Removal silicon chip surface stains；
3rd, making herbs into wool：Silicon chip surface is set to form matte；
4th, spread：It is boron diffusion technique, two surfaces and surrounding generation p type island region domain is just being carried on the back in silicon chip；
5th, region ion implanting：By target control, phosphonium ion is injected in the pectination region of silicon chip back side after the diffusion, it is right to make
Answer the boron in region to neutralize, continue to inject phosphonium ion, N-type region domain is formed again, the N-type region domain is connected with the N-type region domain of silicon chip, from
And the back side is divided into the N-type region domain of pectination and the p type island region domain of pectination；
6th, anneal：Eliminate implant damage and the activator impurity for spreading in advance；
7th, laser ablation：The PN junction of silicon chip surrounding is removed, so as to front be separated with the PN junction at the back side, makes front be main battery
PN junction, the back side is primary cell or protection diode PN junction；
8th, PECVD：In silicon chip double-sided coating, antireflective coating is formed；
9th, print, sinter：Silk-screen printing is carried out at front side of silicon wafer, the back side, front electrode, the back side of battery are formed through oversintering
First electrode and back side second electrode；
Tenth, test, sort：Battery to preparing carries out testing, sorting filing packaging.
2. the preparation method of solar cell according to claim 1, it is characterised in that the silicon chip of selection is polysilicon chip
Or monocrystalline silicon piece.
3. the preparation method of solar cell according to claim 1, it is characterised in that the front electrode is by setting up separately
Main gate line in the side of battery front side two is drawn, and the back side first electrode and the back side second electrode are by being divided into battery
The main gate line of the side of the back side two is drawn.
4. the preparation method of solar cell according to claim 1, it is characterised in that the pectination N-type region domain at the back side is
The back side second electrode, the pectination p type island region domain at the back side is the comb of the back side first electrode, the N-type region domain and p type island region domain
Tooth cross arrangement.
5. the preparation method of solar cell according to claim 1, it is characterised in that the N-type region domain for being formed again
Doping concentration of the doping concentration more than N-type silicon chip matrix.
6. the preparation method of solar cell according to claim 1, it is characterised in that the N-type region domain that the back side is divided into
Width with p type island region domain is equal.
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| CN103794679A (en) * | 2014-01-26 | 2014-05-14 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing back contact solar cell |
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| CN104269457A (en) * | 2014-09-05 | 2015-01-07 | 奥特斯维能源（太仓）有限公司 | n-type IBC silicon solar cell manufacturing method based on ion implantation technology |
| CN105489696A (en) * | 2014-09-18 | 2016-04-13 | 上海神舟新能源发展有限公司 | Method for producing all-back-contact high efficiency crystalline silicon cell |
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| CN103794679A (en) * | 2014-01-26 | 2014-05-14 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing back contact solar cell |
| CN103904164A (en) * | 2014-04-15 | 2014-07-02 | 苏州阿特斯阳光电力科技有限公司 | Preparation method for N-shaped back-junction solar cell |
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| CN105489696A (en) * | 2014-09-18 | 2016-04-13 | 上海神舟新能源发展有限公司 | Method for producing all-back-contact high efficiency crystalline silicon cell |
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