CN102800759B - Production process for integrated solar cell with diodes and manufacturing method for photovoltaic assembly - Google Patents
Production process for integrated solar cell with diodes and manufacturing method for photovoltaic assembly Download PDFInfo
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- CN102800759B CN102800759B CN201210311334.1A CN201210311334A CN102800759B CN 102800759 B CN102800759 B CN 102800759B CN 201210311334 A CN201210311334 A CN 201210311334A CN 102800759 B CN102800759 B CN 102800759B
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Abstract
The invention discloses a production process for an integrated solar cell with diodes and a manufacturing method for a photovoltaic assembly. The production process comprises the following steps of: generating completely-isolated diodes on part of the back surface of the cell by virtue of the design concept of integrated circuits, a photoetching technology and an etching process; printing the same paste on the back surfaces of cell slices by virtue of a printing silk screen, and connecting the negative poles of the diodes with the positive pole of the cell (or connecting the positive poles of the diodes with the negative pole of the cell); and forming the integrated solar cell which is characterized in that the front surface is provided with the cell while the back surface is partially provided with the diodes. One end of the cell is connected with the diodes, and the other end of the cell is independent. During a process of producing an assembly by using the cell, the cell is connected with the electrodes of the diodes by virtue of a welding strip welding process, so as to form the photovoltaic assembly without a need to be externally connected with bypass diodes.
Description
Technical field
The present invention relates to solar cell and photovoltaic module technical field, particularly a kind of production technology of solar cell of integrated diode and the manufacture method of photovoltaic module.
Background technology
Photovoltaic module is the important component part of photovoltaic system, and solar cell is the core of photovoltaic module.The stability of photovoltaic module, reliability directly affect the operating state of photovoltaic system.The structures shape of solar cell packaging technology and the technical performance of assembly.
The photovoltaic module feature of traditional domestic and international production is:
1. photovoltaic module product forms by several parts such as battery strings, convergent belt, encapsulating material, terminal box.
2. convergent belt couples together battery strings, then is connected with terminal box.
3. encapsulating material comprises glass, backboard, EVA, edge frame made of aluminum profiles, silica gel or adhesive tape, and battery strings, convergent belt are sealed.
4. in terminal box, bypass diode is housed.
At present, the structural design of photovoltaic module, be border structure, its core battery strings couples together by convergent belt, through lamination by glass, EVA, be sealed into one with battery strings, EVA, backboard that convergent belt connects, recycle silicon glue or adhesive tape are encapsulated in aluminium frame, and a terminal box with diode and connecting line is installed.Fig. 1 and Fig. 2 are respectively the profile schematic diagram of the front and back of existing photovoltaic module, and wherein 1 is solar cell piece, and 2 is convergent belt, and 3 is terminal box.
In the process of installation, by the connecting line handle component on assembly, couple together, reach assembly square formation, form the power generation part in solar power system.
The reason that bypass diode is housed in terminal box is at present as follows:
In assembly operating process, if a certain solar cell piece in assembly is blocked or breaks down, solar cell piece is just no longer brought into play the effect of solar cell, but be equivalent to an internal resistance, now by other solar modules, powered, covered part is heated up and be far longer than not covered part, cause excess Temperature to occur the blackening burning out, i.e. solar cell hot spot effect.For addressing this problem, bypass diode is housed in terminal box, make bypass diode and battery series-parallel connection.When solar cell piece is blocked or breaks down while breaking down, by bypass diode, pass through electric current, avoid solar cell to burn damage.
Not enough problem is, a slice solar cell goes wrong or is blocked, and causes whole string solar cell to be bypassed, and the loss of assembly power output is larger.Meanwhile, in terminal box, in the work of diode actual moving process, due to the restriction of the diode power of selecting, can emit amount of heat, burn after terminal box, make assembly short circuit or open circuit, can not power output.In addition, as shown in Figure 1, there is convergent belt 2 that is long, overlapping intersection in component internal, affect assembly performance, reduced power output, affected production efficiency simultaneously, also waste material.
There is report, laboratory has the preparation method of the crystal silicon cell of bypass diode in development, Main is as follows: utilize the printing screen designing at the different slurries of the local printing of cell piece, recycling laser grooving technique is isolated on cell piece, makes this part region form diode property; Independent extraction electrode afterwards.This kind of battery has four electrodes (battery, each a pair of both positive and negative polarity of diode).In module production process, by welding, be connected to form separately.This structure specifically has following shortcoming:
First, bypass diode occupies certain area of solar cell, thereby effective area dwindles 1%～10%, affects energy output.Simultaneously, this bypass diode is also a PN junction in fact, only polarity is contrary with battery, also has the effect of battery, and sunlight is when irradiating solar cell, also irradiating so-called bypass diode, it also can send certain electric weight, and its electric current is contrary with battery current, in actual motion, can generate heat at any time, unlike just just positive conducting heating when battery is blocked of the diode in terminal box, reduced like this Comprehensive service life of whole assembly.Because the substrate of battery is a part that forms PN junction, the laser grooving technique of its utilization can't be separated battery and diode completely.The volt-ampere characteristic extreme difference of battery, can only bring into play general action, as shown in Figure 3 like this.And the assembly being formed by this battery, because battery has four strip electrodes, welding procedure is more complicated, and after welding, outward appearance is not attractive in appearance.
Therefore, how to solve the problems referred to above that current photovoltaic module exists, to improve generating efficiency, reduce power generation loss, extend the assembly operating life-span, become those skilled in the art's important technological problems urgently to be resolved hurrily.
Summary of the invention
In view of this, the invention provides a kind of production technology of solar cell of integrated diode, avoided bypass diode on the impact of solar cell light-receiving area, there is good volt-ampere characteristic, thoroughly solved solar cell hot spot effect simultaneously.
On the basis of the production technology of the solar cell of above-mentioned integrated diode, the present invention also provides a kind of manufacture method of photovoltaic module, to improve generating efficiency, reduces power generation loss, extends the assembly operating life-span.
For achieving the above object, the invention provides following technical scheme:
A production technology for the solar cell of integrated diode, comprises step:
1) cleaning silicon chip, and the described silicon chip surface making herbs into wool of cleaning;
2) the described silicon chip surface through making herbs into wool is carried out to One Diffusion Process, while choosing P type silicon chip, technique is specially expansion phosphorus, and while choosing N-type silicon chip, technique is specially expansion boron;
3) the described silicon chip surface through One Diffusion Process is carried out to secondary diffusion, while choosing P type silicon chip, technique is specially expansion boron, and while choosing N-type silicon chip, technique is specially expansion phosphorus;
4) the described silicon chip through secondary diffusion is carried out to gluing one time, technique is specially the position coating dope that diode need to be set at the back side of described silicon chip;
5) the described silicon chip through a gluing is carried out to etching one time, technique is specially immersion, and the position that diode need to be set at the back side of described silicon chip forms the first island;
6) the described silicon chip through an etching is carried out to second glue spreading, technique is specially on described the first island and periphery coating dope;
7) secondarily etched to carrying out through the described silicon chip of second glue spreading, secondarily etched technique is specially printing floatation type, in described the first bottom, island, forms the second island;
8) the described silicon chip through second glue spreading is cleaned again;
9) the described silicon chip through cleaning is again carried out to PECVD, printing and sintering, in the surrounding on described the second island and the top on described the first island, form respectively back surface field battery part and back surface field diode section, and there is blank between described back surface field battery part and described back surface field diode section;
10) the described silicon chip through PECVD, printing and sintering is tested and sorting.
Preferably, described diode is arranged on the relative position of main grid line with described solar cell front.
Preferably, described diode is arranged on the position near described solar cell edge.
Preferably, the concrete quantity of described diode is two, relative with two grid lines in described solar cell front respectively.
A manufacture method for photovoltaic module, comprises and the production technology of the solar cell of above-mentioned integrated diode also comprises step:
11) by the back side main electrode of a solar cell, by the first welding, the front electrode with another piece solar cell connects, and the back side auxiliary electrode of the described diode of a rear described back of solar cell setting is connected with described the first welding by the second welding.
Preferably, in the terminal box of this photovoltaic module, do not contain diode.
Preferably, the concrete quantity of described terminal box is two.
From above-mentioned technical scheme, can find out, the production technology of the solar cell of integrated diode provided by the invention, by this explained hereafter solar cell (being called for short battery below) out, its diode is totally independent of outside battery, and be integrated in cell backside, accomplished completely " battery operated, diode is had a rest; Diode is had a rest, battery operated ", this battery does not affect light-receiving area, and volt-ampere characteristic is with volt-ampere characteristic is identical at present; Because silicon area is far longer than the area of external diode chip, reach hundreds of times, even thousands of times, add that diode is attached to cell backside, in the idle situation of battery first, being equivalent to diode has a very large fin, so can not produce thermal effect, thoroughly solve solar cell hot spot effect, and then extended useful life.
On the basis of the production technology of the solar cell of above-mentioned integrated diode, the present invention also provides a kind of manufacture method of photovoltaic module, except thering is above-mentioned reduction power generation loss, with extend outside the advantage in assembly operating life-span, also further improved the connected mode of the inner solar cell of photovoltaic module (being called for short assembly below) with terminal box, reduced inner long, the convergent belt of overlapping intersection and two outside connection cables, component internal loss and External cable loss have been reduced like this, also increased assembly generating efficiency, while having avoided assembly to produce simultaneously between convergent belt by the hidden danger of voltage breakdown, in addition, because the internal structure of assembly has obtained simplifying, also dwindle the overall dimension of assembly, compared with prior art, can in same area, arrange more assembly, thereby improved assembly in the utilance in place, in the welding process of battery, only need welding two strip electrodes, technique is simple, attractive in appearance after welding.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the positive facial contour schematic diagram of photovoltaic module in prior art;
Fig. 2 is the back side profile schematic diagram of photovoltaic module in prior art;
Fig. 3 utilizes the volt-ampere characteristic figure of the battery of laser grooving explained hereafter in prior art;
The producing principle figure of the P type solar cell of the integrated diode that Fig. 4 provides for the embodiment of the present invention;
Fig. 5 expands through One Diffusion Process the generalized section that the P type silicon chip after boron is expanded in phosphorus and secondary diffusion for what the embodiment of the present invention provided;
The front schematic view of the P type silicon chip through a gluing that Fig. 6 provides for the embodiment of the present invention;
The schematic rear view of the P type silicon chip through a gluing that Fig. 7 provides for the embodiment of the present invention;
The a place profile of the P type silicon chip through a gluing that Fig. 8 provides for the embodiment of the present invention;
The front schematic view of the P type silicon chip through an etching that Fig. 9 provides for the embodiment of the present invention;
The schematic rear view of the P type silicon chip through an etching that Figure 10 provides for the embodiment of the present invention;
The a place profile of the P type silicon chip through an etching that Figure 11 provides for the embodiment of the present invention;
The front schematic view through the P type silicon chip of second glue spreading that Figure 12 provides for the embodiment of the present invention;
The schematic rear view through the P type silicon chip of second glue spreading that Figure 13 provides for the embodiment of the present invention;
The a place profile through the P type silicon chip of second glue spreading that Figure 14 provides for the embodiment of the present invention;
The front schematic view of the P type silicon chip that process that Figure 15 provides for the embodiment of the present invention is secondarily etched;
The schematic rear view of the P type silicon chip that process that Figure 16 provides for the embodiment of the present invention is secondarily etched;
The a place profile of the P type silicon chip that process that Figure 17 provides for the embodiment of the present invention is secondarily etched;
The front schematic view through the P type silicon chip that cleans again that Figure 18 provides for the embodiment of the present invention;
The schematic rear view through the P type silicon chip that cleans again that Figure 19 provides for the embodiment of the present invention;
The a place profile through the P type silicon chip that cleans again that Figure 20 provides for the embodiment of the present invention;
The front schematic view through the P type silicon chip of PECVD, printing and sintering that Figure 21 provides for the embodiment of the present invention;
The schematic rear view through the P type silicon chip of PECVD, printing and sintering that Figure 22 provides for the embodiment of the present invention;
The b place profile through the P type silicon chip of PECVD, printing and sintering that Figure 23 provides for the embodiment of the present invention;
The a place profile through the P type silicon chip of PECVD, printing and sintering that Figure 24 provides for the embodiment of the present invention;
Figure 25 is the schematic rear view that the welding of current solar cell is used;
Figure 26 is the front schematic view that the welding of current solar cell is used;
Figure 27 is the side schematic view that the welding of current solar cell is used;
The schematic rear view that the welding of the solar cell that Figure 28 provides for the embodiment of the present invention is used;
The front schematic view that the welding of the solar cell that Figure 29 provides for the embodiment of the present invention is used;
The side schematic view that the welding of the current solar cell that Figure 30 provides for the embodiment of the present invention is used;
The positive facial contour schematic diagram of the photovoltaic module that Figure 31 provides for the embodiment of the present invention;
The back side profile schematic diagram of the photovoltaic module that Figure 32 provides for the embodiment of the present invention.
Fig. 1 and Fig. 2 are photovoltaic module of the prior art, and wherein, 1 is solar cell, and 2 is convergent belt, and 3 is terminal box;
Figure 25-Figure 27 is solar cell of the prior art, and wherein, 4 is welding;
The producing principle figure of the solar cell with P type silicon chip integrated diode that Fig. 4 provides for the embodiment of the present invention, wherein, A is battery cathode (front electrode), B is anode, diode cathode (back side main electrode), C is diode cathode (back side auxiliary electrode), and D is that two electrodes connect (dotted portion) by outside welding;
The solar cell with P type silicon chip integrated diode that Fig. 5-Figure 24 provides for the embodiment of the present invention, 111 is PN junction, 112 for expanding the N district after phosphorus, and 113 for expanding the P district after boron, and 114 is the anticorrosion glue-line of a brush coating, 115 is the anticorrosion glue-line of secondary brush coating, 116 is front main grid line, and 117 is backplate, and 118 is back surface field, 1181 is back surface field battery part, and 1182 is back surface field diode section;
The photovoltaic module that Figure 28-Figure 32 provides for the embodiment of the present invention, wherein, 11 is solar cell, and 12 is convergent belt, and 13 is terminal box, and 14 is the first welding, 15 is the second welding.
Embodiment
The invention discloses a kind of production technology of solar cell of integrated diode, avoided bypass diode on the impact of solar cell light-receiving area, there is good volt-ampere characteristic, thoroughly solved solar cell hot spot effect simultaneously.
On the basis of the production technology of the solar cell of above-mentioned integrated diode, the invention also discloses a kind of manufacture method of photovoltaic module, to improve generating efficiency, reduce power generation loss, extend the assembly operating life-span.
Technical scheme for a better understanding of the present invention, existing relevant to this case terminological interpretation is as follows:
Photovoltaic module: be also solar module, solar panel, it is the photovoltaic generation product converting solar energy into electrical energy, and is the core in solar power system.Consisting of electricity generation system by photovoltaic module, generate electricity, electric energy is sent in storage battery and is stored, or drive loaded work piece.The quality of photovoltaic module and cost will directly determine quality and the cost of whole system.
Terminal box: be the link of photovoltaic module output, inside is generally comprised of parts such as several diodes, splicing ear, box body, lid, connecting lines.
Battery strings: be a string battery solar cell being coupled together by welding.
Solar cell hot spot effect: refer to that solar module is under solar radiation, cannot work because part assembly is subject to blocking, covered part is heated up and be far longer than not covered part, cause excess Temperature to occur the blackening burning out.Hot spot may cause whole battery component to damage, and causes damage.Therefore, need research to cause the immanent cause of hot spot, thereby reduce the possibility that hot spot forms.The formation of solar cell hot spot mainly consists of two internal factors, relevant with solar cell self dark current size with internal resistance respectively.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
The producing principle figure of the solar cell with P type silicon chip integrated diode that Fig. 4 provides for the embodiment of the present invention, wherein, A is battery cathode (front electrode), B is anode, diode cathode (back side main electrode), C is diode cathode (back side negative electrode), and D is that two electrodes connect (dotted portion) by outside welding.
Refer to Fig. 5-24, the production technology of the solar cell of the integrated diode that the embodiment of the present invention provides, the P type crystal silicon chip of take is example, its core improvement is, comprises step:
S1, cleaning silicon chip, and the silicon chip surface making herbs into wool of cleaning.
S2, to carrying out One Diffusion Process through the silicon chip surface of making herbs into wool, technique is specially expansion phosphorus;
As shown in Figure 5, the outer surface at silicon chip forms PN junction 111He N district 112 successively.
When choosing N-type silicon chip, the technique of One Diffusion Process is specially expansion boron.
S3, to carrying out secondary diffusion through the silicon chip surface of One Diffusion Process, technique is specially expansion boron;
As shown in Figure 5, the 112 outer PN junction 111He P districts 113 that form in above-mentioned N district.
Accordingly, when choosing N-type silicon chip, the technique of secondary diffusion is specially expansion phosphorus.
S4, the silicon chip that process secondary is spread carry out gluing one time, and technique is specially the position coating dope that diode need to be set at the back side of silicon chip;
As Figure 6-Figure 8, by applying anticorrosion glue-line 114, in specific region, form protection, the shape of dope coating is in the present embodiment specially square, so that in next step a etching, form the first square island.Certainly, the form of dope coating can be adjusted accordingly, to the multiple modification of these embodiment, will be apparent for those skilled in the art, does not repeat them here.
S5, the silicon chip through a gluing is carried out to etching one time, technique is specially immersion, and the position that diode need to be set at the back side of silicon chip forms the first island;
Etching is the full wet etching that immerses, can move together by whole battery insert box, also can with current wet-method etching equipment, just allow silicon chip all immerse.Through the silicon chip structure of an etching as Figure 9-Figure 11,
S6, the silicon chip through an etching is carried out to second glue spreading, technique is specially on the first island and periphery coating dope;
As shown in Figure 12-Figure 14, the scope of the anticorrosion glue-line 115 that second glue spreading forms is larger than a gluing, so that in next step secondarily etched, on first formation the second island, bottom, island, but their object is identical, it is mainly the anti-partial etching that is blocked.In addition, the present embodiment is not specifically limited the material of dope, can be the negative glue of photoresist, positive glue, can be also the dope of other kinds, and those skilled in the art can select according to actual needs, do not repeat them here.
S7, secondarily etched to carrying out through the silicon chip of second glue spreading, secondarily etched technique is specially printing floatation type, in the first bottom, island, forms the second island;
Secondarily etched is floatation type wet etching, identical with current wet etching.Through secondarily etched silicon chip structure, please refer to Figure 15-Figure 17.
S8, to cleaning again through the silicon chip of second glue spreading;
Clean again object and be the dope of removing silicon chip surface coating, through the silicon chip structure of cleaning again as shown in Figure 18-Figure 20.
S9, the silicon chip through cleaning is again carried out to PECVD, printing and sintering, in the surrounding on the second island and the top on the first island, form respectively back surface field battery part 1181 and back surface field diode section 1182, and there is silicon chip blank parts between back surface field battery part 1181 and back surface field diode section 1182;
Refer to Figure 21-Figure 24, according to the radical of the main grid line 116 in solar cell front and the difference of form is set, at the front of silicon chip printing screen, form front electrode; Back up silk screen at silicon chip forms back surface field 118, and silk screen is different on pattern with at present for back up silk screen, different according to main grid line 116 radicals, has isolated plot territory at edge.
So far, just formed the solar cell of integrated diode, its diode is totally independent of outside solar cell, and is integrated in the back side of solar cell.
S10, to testing and sorting through the silicon chip of PECVD, printing and sintering.
Compare with the basic production technique (cleaning → making herbs into wool → diffusion → etching → PECVD → printing → sintering → test → sorting) of current solar cell, difference of the present invention is that technological process has increased " → gluing → mono-time etching → second glue spreading of secondary diffusion → secondarily etched → clean again " processing step.
This battery production technology is suitable for large-scale production, has just increased therein some links, and can not affect production efficiency.Such as:
1. etching technics: a time etching is the full wet etching that immerses, can move by whole battery insert box together, also can with current wet-method etching equipment, just allow silicon chip all immerse; Secondarily etched is floatation type wet etching, identical with current wet etching.
2. typography, printing slurry are identical, just how many according to grid line, change overleaf pattern on silk screen.
From above-mentioned technical scheme, can find out, the production technology of the solar cell of the integrated diode that the embodiment of the present invention provides, by this explained hereafter solar cell (being called for short battery below) out, its diode is totally independent of outside battery, and be integrated in cell backside, accomplished completely " battery operated, diode is had a rest; Diode is had a rest, battery operated ", this battery does not affect light-receiving area, and volt-ampere characteristic is with volt-ampere characteristic is identical at present; Because cell area is far longer than the area of external diode chip, reach hundreds of times, even thousands of times, add that diode is attached to cell backside, in the idle situation of battery, being equivalent to diode has a very large fin, so can not produce thermal effect, thoroughly solve solar cell hot spot effect, and then extended useful life.
Above-mentioned production technology and respective drawings mainly be take P type silicon chip and are introduced as example, the production technology silicon chip used of the solar cell of the integrated diode that the embodiment of the present invention provides is certainly not limited only to this, no matter be monocrystalline silicon piece, polysilicon chip or P type silicon chip, N-type silicon chip or the silicon chip of other types, all be applicable to this production technology, to the multiple modification of these embodiment, will be apparent for those skilled in the art, General Principle as defined herein can be in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.
As preferably, diode is arranged on the relative position of main grid line 116 in same solar cell front.Please refer to Figure 21-Figure 24, main grid line 116 and the backplate 117 in solar cell front are oppositely arranged, and the diode that is arranged on equally the back side is relative with main grid line 116.
Further, diode is arranged on the position near solar cell edge, is convenient to the welding in the assembling photovoltaic component process of back, has reduced the length of welding.
How many according to the size of solar cell, main grid line, design arbitrarily several diodes, the two grid line batteries such as conventional, can be designed to 1 to 2; Three conventional grid line batteries, can be designed to 1 to 3.In this enforcement, the concrete quantity of diode is two, and relative with two grid lines in solar cell front respectively, its structure is as shown in Figure 21-Figure 24.
On the basis of the production technology of the solar cell of above-mentioned integrated diode, the present invention also provides a kind of manufacture method of photovoltaic module, and its core improvement is, comprises the production technology of the solar cell of above-mentioned integrated diode, also comprises step:
S11, by the back side main electrode of a solar cell, by the first welding 14, the front electrode with another piece solar cell connects, and the back side auxiliary electrode of the diode that a rear described back of solar cell is arranged connects with the first welding 14 by the second welding 15, i.e. 117 in the figure of back side main electrode wherein, front electrode i.e. front main grid line 116 in figure.Afterwards, then the lay successively → lamination → terminal box → test that frames up → install, the manufacture of photovoltaic module completed.
Figure 25-Figure 27 is the welding manner of sun assembly in prior art, and Figure 28-Figure 30 is the welding manner of sun assembly in photovoltaic module provided by the invention.
The embodiment of the present invention also provides a kind of manufacture method of photovoltaic module, except thering is above-mentioned solar cell, reduce power generation loss, with extend outside the advantage in assembly operating life-span, also further improved the connected mode of the inner solar cell of photovoltaic module (being called for short assembly below) with terminal box, inner convergent belt that is long, overlapping intersection and two outside connection cables have been reduced, component internal loss and External cable loss have been reduced like this, also increased assembly generating efficiency, while having avoided assembly to produce simultaneously between convergent belt by the hidden danger of voltage breakdown; In addition, because the internal structure of assembly has obtained simplifying, also dwindle the overall dimension of assembly, compared with prior art, can in same area, arrange more assembly, thereby improved assembly in the utilance in place; In the welding process of battery, only need welding two strip electrodes, technique is simple, attractive in appearance after welding.
By comparison diagram 1 and Figure 31, can find that its convergent belt 12 of photovoltaic module provided by the invention has obviously shortened, its internal structure has obtained simplifying, and the length of whole photovoltaic module can shorten L.The assembly of use 156 * 156 battery production commonly used of take is example, and convergent belt width is generally 6～8mm, and the overall dimension of assembly at least can be dwindled 60000mm
2(30mm * 2000mm), has increased assembly generating efficiency.The overall dimension of every increase by two string battery components will be dwindled 30000mm
2.
The manufacture method of photovoltaic module provided by the invention, has reduced manufacturing cost.First be on raw material, greatly reduced convergent belt and connection cable, reduced the consumption of glass, aluminium section bar, backboard, EVA simultaneously; Next be lay, the also corresponding reduction of machining period such as lamination, packing.
In view of sun component internal integrated diode, in the terminal box of photovoltaic module, just can save diode so.As preferably, in the terminal box of the photovoltaic module that the embodiment of the present invention provides, not containing diode, due to inner diode-less, greatly dwindled terminal box volume, be approximately 1/8th of original terminal box.
As shown in Figure 31 and Figure 32, in Figure 31, empty coiler part indication is the relevant position that terminal box 13 is installed in photovoltaic module front, and the concrete quantity of terminal box 13 is two.It should be noted that, terminal box 13 can be two, can be also to concentrate one, and concrete quantity can be carried out suitable adjustment according to the size of photovoltaic module and specification.
In sum, the invention discloses a kind of production technology of solar cell and manufacture method of photovoltaic module of integrated diode, utilize the design concept of integrated circuit and photoetching technique, etching technics, at the local diode of isolation completely that generates of cell backside; Recycling printing screen is in cell piece back side printing same slurry, makes the negative pole of diode be connected with anode (or the positive pole of diode is connected with battery cathode); Forming front is that battery, part, the back side are the integrated solar cell of diode.This battery is connected with diode one end, the other end independent.Using battery to make in component process, utilize welding welding procedure that battery is connected with diode electrode, form the photovoltaic module without external bypass diode.
In this specification, each embodiment adopts the mode of going forward one by one to describe, and each embodiment stresses is the difference with other embodiment, between each embodiment identical similar part mutually referring to.
Above-mentioned explanation to the disclosed embodiments, makes professional and technical personnel in the field can realize or use the present invention.To the multiple modification of these embodiment, will be apparent for those skilled in the art, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (7)
1. a production technology for the solar cell of integrated diode, is characterized in that, comprises step:
1) cleaning silicon chip, and the described silicon chip surface making herbs into wool of cleaning;
2) the described silicon chip surface through making herbs into wool is carried out to One Diffusion Process, while choosing P type silicon chip, technique is specially expansion phosphorus, and while choosing N-type silicon chip, technique is specially expansion boron;
3) the described silicon chip surface through One Diffusion Process is carried out to secondary diffusion, while choosing P type silicon chip, technique is specially expansion boron, and while choosing N-type silicon chip, technique is specially expansion phosphorus;
4) the described silicon chip through secondary diffusion is carried out to gluing one time, technique is specially the position coating dope that diode need to be set at the back side of described silicon chip;
5) the described silicon chip through a gluing is carried out to etching one time, technique is specially immersion, and the position that diode need to be set at the back side of described silicon chip forms the first island;
6) the described silicon chip through an etching is carried out to second glue spreading, technique is specially on described the first island and periphery coating dope;
7) secondarily etched to carrying out through the described silicon chip of second glue spreading, secondarily etched technique is specially printing floatation type, in described the first bottom, island, forms the second island;
8) the described silicon chip through second glue spreading is cleaned again;
9) the described silicon chip through cleaning is again carried out to PECVD, printing and sintering, in the surrounding on described the first island and the top on described the second island, form respectively back surface field battery part and back surface field diode section, and there is blank between described back surface field battery part and described back surface field diode section;
10) the described silicon chip through PECVD, printing and sintering is tested and sorting.
2. the production technology of the solar cell of integrated diode according to claim 1, is characterized in that, described diode is arranged on the relative position of main grid line with described solar cell front.
3. the production technology of the solar cell of integrated diode according to claim 2, is characterized in that, described diode is arranged on the position near described solar cell edge.
4. the production technology of the solar cell of integrated diode according to claim 3, is characterized in that, the concrete quantity of described diode is two, relative with two grid lines in solar cell front respectively.
5. a manufacture method for photovoltaic module, is characterized in that, comprises the production technology of the solar cell of the integrated diode as described in claim 1-4 any one, also comprises step:
11) by the back side main electrode of a solar cell, by the first welding, the front electrode with another piece solar cell connects, and the back side auxiliary electrode of the described diode of a rear described back of solar cell setting is connected with described the first welding by the second welding.
6. the manufacture method of photovoltaic module according to claim 5, is characterized in that, does not contain diode in the terminal box of photovoltaic module.
7. the manufacture method of photovoltaic module according to claim 6, is characterized in that, the concrete quantity of described terminal box is two.
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| CN105336749B (en) * | 2015-10-14 | 2018-05-08 | 天津三安光电有限公司 | Upside-down mounting multijunction solar cell chip of integrated bypass diode and preparation method thereof |
| CN108987533B (en) * | 2018-07-23 | 2020-10-16 | 英利能源（中国）有限公司 | Preparation method of solar cell module and solar cell module |
| CN112420874A (en) * | 2020-12-02 | 2021-02-26 | 中国电子科技集团公司第十八研究所 | Preparation method of solar cell module applied to near space aircraft |
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| GB1382072A (en) * | 1972-02-03 | 1975-01-29 | Ferranti Ltd | Solar cells |
| CN101950772A (en) * | 2010-08-05 | 2011-01-19 | 中山大学 | Preparation method of crystalline silicon solar cell with bypass diode |
| CN102237377A (en) * | 2010-05-03 | 2011-11-09 | 杜邦太阳能有限公司 | Monolithic integration of bypass diodes with a thin film solar module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2573083B2 (en) * | 1990-06-06 | 1997-01-16 | シャープ株式会社 | Solar cell with bypass diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1382072A (en) * | 1972-02-03 | 1975-01-29 | Ferranti Ltd | Solar cells |
| CN102237377A (en) * | 2010-05-03 | 2011-11-09 | 杜邦太阳能有限公司 | Monolithic integration of bypass diodes with a thin film solar module |
| CN101950772A (en) * | 2010-08-05 | 2011-01-19 | 中山大学 | Preparation method of crystalline silicon solar cell with bypass diode |
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| JP平4-42974A 1992.02.13 * |
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