CN102738264A - Doping unit, doping wafer, doping method, solar battery and manufacturing method - Google Patents

Doping unit, doping wafer, doping method, solar battery and manufacturing method Download PDF

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CN102738264A
CN102738264A CN2011100955790A CN201110095579A CN102738264A CN 102738264 A CN102738264 A CN 102738264A CN 2011100955790 A CN2011100955790 A CN 2011100955790A CN 201110095579 A CN201110095579 A CN 201110095579A CN 102738264 A CN102738264 A CN 102738264A
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doped region
heavily doped
type heavily
ion
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CN102738264B (en
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钱锋
陈炯
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Kingstone Semiconductor Co Ltd
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SHANGHAI KAISHITONG SEMICONDUCTOR CO Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention discloses a doping unit, comprising an N-type substrate, P-type heavy doping regions and N-type heavy doping regions formed on a back side of the N-type substrate, P-type light doping regions formed around the P-type heavy doping regions, and N-type light doping regions formed around the N-type heavy doping regions. The P-type heavy doping regions and the N-type heavy doping regions, the P-type heavy doping regions and the N-type light doping regions, and the N-type heavy doping regions and the P-type light doping regions do not contact with each other, wherein, when the P-type is replaced by the N-type, the N-type is replaced by the P-type. In the doping unit, with an N-type substrate material, the P-type light doping regions, and the N-type light doping regions as buffer layers between the P-type heavy doping regions and N-type heavy doping regions, breakdown of PN junctions caused by too thin depletion layers can be prevented. Thus, the PN junctions having a P+/P-/N/N-/N+ structure make carrier migration more uniform and speed of the migration more stable, so that service life of the doping wafer is increased.

Description

Doping unit, wafers doped, doping method, solar cell and manufacture method
Technical field
The present invention relates to a kind of doping unit, wafers doped, doping method, solar cell and preparation method thereof, particularly relate to a kind of solar energy doping unit, wafers doped, doping method and back junction solar battery that is used to carry on the back junction battery and preparation method thereof.
Background technology
New forms of energy are one of five big technical fields of tool decision power in the 21st century development of world economy.Solar energy is a kind of cleaning, efficiently and never depleted new forms of energy.In the new century, national governments are all with the important content of solar energy resources utilization as the national sustainable development strategy.And that photovoltaic generation has is safe and reliable, noiseless, pollution-free, restriction less, advantages such as low, the easy maintenance of failure rate.
In recent years, international photovoltaic generation fast development, supply falls short of demand for solar wafer, so the electricity conversion of raising solar wafer and the production capacity of solar wafer become important problem.After solar cell received illumination, battery produced electron-hole pair after absorbing the incident photon of an energy greater than band gap width, and electronics and hole are energized into the upper state of conduction band and valence band respectively.Moment after exciting, the energy of incident photon is depended in electronics and hole in the energy position of excitation state.The photo-generated carrier that is in upper state very fast with the lattice interaction, energy is given phonon and is fallen back at the bottom of the conduction band and top of valence band, this process is also referred to as the thermalization process, the thermalization process make high-energy photon energy loss a part.After the thermalization process, the transport process of photo-generated carrier will have recombination losses in (barrier region or diffusion region).Last voltage output once pressure drop again, pressure drop derive from the difference with the work function of electrode material.By above-mentioned analysis, solar battery efficiency receives material, device architecture and preparation technology's influence, comprises the light loss of battery, limited mobility, recombination losses, series resistance and the bypass resistance loss etc. of material.For certain material, battery structure and preparation technology's improvement is important to improving photoelectric conversion efficiency.A kind of feasible realization low-cost high-efficiency solar cell scheme is a concentrator solar cell.Concentrator solar cell is the economical with materials cost greatly, obviously improves efficiency of solar cell.Adopt the solar cell of front junction structure, in order to satisfy the bigger characteristics of concentrator cell current density, must increase front gate line density greatly, this can influence the grid line shading rate conversely, reduces short circuit current.The scheme that a kind of feasible solution shading is lost is carried on the back knot back of the body contact structures solar cell exactly.Back of the body knot back of the body contact structures solar cell doped region and golden half contact zone all are integrated in back of solar cell, and it is very most of that backplate occupies back of the body surface, reduced the contact resistance loss.In addition, direction of current flow is perpendicular to the interface, and this has just further eliminated the ohmic loss that the Facad structure transverse current flows and causes, and will satisfy the requirement that high-strength focused front receives light and high-photoelectric transformation efficiency simultaneously like this.Back of the body knot back of the body contact battery structure also helps cell package, further reduces cost.
But because the PN junction of back of the body junction battery is near cell backside; And must diffusing through whole silicon wafer thickness, minority carrier just can reach interface, the back side; So the silicon chip that this battery design just needs especially high minority carrier life time is as base material; Otherwise few son also is not diffused into interface, the back side just have been fallen by compound, and the efficient of battery will descend greatly like this.IBC (interdigitated back contact) solar cell is the back of the body junction battery of studying the earliest; Be mainly used in the condenser system at first; The back contact silicon solar cell progress of Ren Bingyan etc. has been introduced the structure and the manufacture craft of various back contact silicon solar cells in (material Leader the 22nd the 9th phase of volume of September in 2008); With the IBC solar cell is example, and the high conversion efficiency of the IBC solar cell that SUNPOWER company makes can reach 24%, then because it has adopted photoetching process; Because the complex operations that photoetching brought makes that its cost is difficult to descend, and causes difficulty for commercial applications civilian or common occasion.In order to reduce cost; The P+ district and the N+ district that utilize mask plate to form cross arrangement are also arranged; But in manufacturing process, must use many mask plates; Not only increased cost of manufacture, therefore calibration has also produced the problem that adopts different mask plates to calibrate because photoetching technique needs accurately, for manufacturing process has been brought many difficulty.
Summary of the invention
The technical problem that the present invention will solve is in order to use the higher defective of photoetching process cost in the manufacturing process that overcomes prior art IBC solar cell, provides that a kind of cost is lower, processing step is less and dopant ion concentration is able to solar energy doping unit, wafers doped, doping method, solar cell of accurately control and preparation method thereof.
The present invention solves above-mentioned technical problem through following technical proposals:
A kind of doping unit, its characteristics are that this doping unit comprises:
One N type substrate;
Be formed at P type heavily doped region and N type heavily doped region in this N type backside of substrate;
Be formed at this P type heavily doped region P type lightly doped region on every side;
Be formed at this N type heavily doped region N type lightly doped region on every side;
Wherein, this P type heavily doped region does not contact with this N type heavily doped region mutually, and this N type lightly doped region of this P type heavily doped region does not contact mutually, and this N type heavily doped region do not contact with this P type lightly doped region mutually,
Wherein, when described P type replaced with the N type, the N type replaced with the P type simultaneously.
Wherein this P type lightly doped region can contact with this P type heavily doped region, and this N type lightly doped region can contact with this N type heavily doped region.
Preferably, this doping unit also comprises N type doped layer or the P type doped layer that is positioned at this N type substrate surface.For the substrate of N type, if the surface with P type doped layer as the front surface field, the solar cell that is made by this doping unit is exactly a double-junction solar battery, can further improve its photoelectric conversion efficiency.
Preferably, the minimum range of this P type heavily doped region and this N type heavily doped region is at least 10 μ m.More preferably, the minimum range of this P type heavily doped region and this N type heavily doped region is 10-70 μ m.
Preferably, the width of this P type heavily doped region is 1000-3000 μ m.More preferably, the width of this P type heavily doped region is 1500-2500 μ m..
Preferably, the width of N type heavily doped region is 250-700 μ m.More preferably, the width of N type heavily doped region is 300-600 μ m.
Preferably, the width of this P type lightly doped region is 5-50 μ m.More preferably, the width of this P type lightly doped region is 10-40 μ m.Wherein this P type lightly doped region can contact with this P type heavily doped region.
Preferably, the width of this N type lightly doped region is 5-50 μ m.More preferably, the width of this N type lightly doped region is 10-40 μ m.Wherein this N type lightly doped region can contact with this N type heavily doped region.
Preferably, the square resistance of this P type heavily doped region is 10-50 Ω/.Preferably, the square resistance of this P type heavily doped region is 15-45 Ω/, and more preferably, the square resistance of this P type heavily doped region is 20-40 Ω/.
Preferably, the square resistance of this N type heavily doped region is 10-50 Ω/.Preferably, the square resistance of this N type heavily doped region is 15-45 Ω/, and more preferably, the square resistance of this N type heavily doped region is 20-40 Ω/.
Preferably, the square resistance of this P type lightly doped region is 60-120 Ω/.Preferably, the square resistance of this P type lightly doped region is 70-110 Ω/, and more preferably, the square resistance of this P type lightly doped region is 80-100 Ω/.
Preferably, the square resistance of this N type lightly doped region is 60-120 Ω/.Preferably, the square resistance of this N type lightly doped region is 70-110 Ω/, and more preferably, the square resistance of this N type lightly doped region is 80-100 Ω/.
The present invention also provides a kind of wafers doped, and its characteristics are that it comprises a plurality of aforesaid doping unit.
The present invention also provides a kind of doping method of making aforesaid wafers doped, and its characteristics are that it may further comprise the steps:
In the back side of N type substrate, be used to contact the first area formation P type heavily doped region of positive electrode;
Second area in the back side of N type substrate forms this P type lightly doped region, and wherein this second area is the zone around this P type heavily doped region;
In the back side of N type substrate, be used to contact the 3rd zone formation N type heavily doped region of negative electrode;
The 4th zone in the back side of N type substrate forms this N type lightly doped region; Wherein the 4th zone is the zone around this N type heavily doped region, and wherein this P type heavily doped region does not contact with this N type heavily doped region mutually, and this N type lightly doped region of this P type heavily doped region does not contact mutually; And this N type heavily doped region does not contact with this P type lightly doped region mutually; Wherein, when described P type replaced with the N type, the N type replaced with the P type simultaneously.The sequencing that wherein forms P type heavily doped region, P type lightly doped region, N type heavily doped region and N type lightly doped region is not limit.The mode that can utilize many mask plates and adopt ion to inject forms above-mentioned P type heavily doped region, P type lightly doped region, N type heavily doped region and N type lightly doped region.Again for example, through being that silicon dioxide, amorphous silicon, polysilicon or the silicon nitride film of 10-50 μ m is as mask plate at N type backside of substrate growth thickness.
Preferably, this doping method may further comprise the steps:
The first area that the mode of injecting through ion is injected into P type ion this N type backside of substrate and second area are with at first area and second area formation P type heavily doped region, and wherein the dosage of P type ion is a;
The 3rd zone that the mode of injecting through ion is injected into N type ion this N type backside of substrate and second area are to form N type heavily doped region and at second area formation P type lightly doped region in the 3rd zone; Wherein the dosage of N type ion is b, and b is less than a.Specifically; Only need use two mask plates to get final product; Because second area is P type heavily doped region originally,, reduced the P type ion concentration of second area therefore in the process of injecting N type ion; Naturally formed P type lightly doped region, this method has reduced the usage quantity of processing step and mask plate.
Likewise, the step of formation N type lightly doped region is further comprising the steps of in this doping method: the 4th zone that the mode of injecting through ion is injected into P type ion this N type backside of substrate is to form N type lightly doped region in the 4th zone.
Preferably, this doping method is further comprising the steps of:
Step S P, form N type doped layer or P type doped layer on the surface of this N type substrate.The mode that can adopt ion to inject perhaps thermal diffusion forms this N type doped layer or P type doped layer.If adopt the mode of thermal diffusion, thermal diffusion simultaneously also as before ion injects when forming P type heavily doped region, P type lightly doped region, N type heavily doped region and N type lightly doped region annealing steps, to activate dopant ion.In addition, if what adopt is the substrate of N type, then to form the conversion efficiency of the solar cell that P type doped layer makes the wafers doped of doping gained more favourable for N type substrate surface, and this is because double-junction solar battery can further improve its photoelectric conversion efficiency.Otherwise,, then beneficially form N type doped layer on the surface of P type substrate to the substrate of P type.
Preferably, form this P type heavily doped region through quickening P type ion to 500eV-50keV and the mode injected through ion, the square resistance that makes this P type heavily doped region is 10-50 Ω/.Preferably, P type ion is accelerated to 1keV-40keV, and more preferably, P type ion is accelerated to 5keV-30keV.
Preferably, form this N type heavily doped region through quickening N type ion to 500eV-50keV and the mode injected through ion, the square resistance that makes this N type heavily doped region is 10-50 Ω/.Preferably, N type ion is accelerated to 1keV-40keV, and more preferably, N type ion is accelerated to 5keV-30keV.
Preferably, the minimum range of this P type heavily doped region and this N type heavily doped region is at least 10 μ m.More preferably, the minimum range of this P type heavily doped region and this N type heavily doped region is 10-70 μ m.
The present invention also provides a kind of solar cell, and its characteristics are that it comprises aforesaid wafers doped, and this solar cell also comprises:
Be formed at this wafers doped coating surfaces, this coating be first passivation layer and and anti-reflection film;
Be formed at second passivation layer at this wafers doped back side;
Be positioned at the positive electrode at this P type heavily doped region back side; And
Be positioned at the negative electrode at this N type heavily doped region back side,
Wherein, when described P type replaced with the N type, the N type replaced with the P type simultaneously.
Preferably, the minimum range of this P type heavily doped region and this N type heavily doped region is at least 10 μ m.More preferably, the minimum range of this P type heavily doped region and this N type heavily doped region is 10-70 μ m.
Preferably, the width of this P type heavily doped region is 1000-3000 μ m.More preferably, the width of this P type heavily doped region is 1500-2500 μ m..
Preferably, the width of N type heavily doped region is 250-700 μ m.More preferably, the width of N type heavily doped region is 300-600 μ m.
Preferably, the width of this P type lightly doped region is 5-50 μ m.More preferably, the width of this P type lightly doped region is 10-40 μ m.Wherein this P type lightly doped region can contact with this P type heavily doped region.
Preferably, the width of this N type lightly doped region is 5-50 μ m.More preferably, the width of this N type lightly doped region is 10-40 μ m.Wherein this N type lightly doped region can contact with this N type heavily doped region.
Preferably, the square resistance of this P type heavily doped region is 10-50 Ω/.Preferably, the square resistance of this P type heavily doped region is 15-45 Ω/, and more preferably, the square resistance of this P type heavily doped region is 20-40 Ω/.
Preferably, the square resistance of this N type heavily doped region is 10-50 Ω/.Preferably, the square resistance of this N type heavily doped region is 15-45 Ω/, and more preferably, the square resistance of this N type heavily doped region is 20-40 Ω/.
Preferably, the square resistance of this P type lightly doped region is 60-120 Ω/.Preferably, the square resistance of this P type lightly doped region is 70-110 Ω/, and more preferably, the square resistance of this P type lightly doped region is 80-100 Ω/.
Preferably, the square resistance of this N type lightly doped region is 60-120 Ω/.Preferably, the square resistance of this N type lightly doped region is 70-110 Ω/, and more preferably, the square resistance of this N type lightly doped region is 80-100 Ω/.
Preferably, the square resistance of this P type heavily doped region is 40-120 Ω/.Preferably, the square resistance of this P type heavily doped region is 60-110 Ω/, and more preferably, the square resistance of this P type heavily doped region is 80-100 Ω/.
Preferably, the square resistance of this N type heavily doped region is 20-100 Ω/.Preferably, the square resistance of this N type heavily doped region is 30-90 Ω/, and more preferably, the square resistance of this N type heavily doped region is 40-80 Ω/.
Preferably, first passivation layer of this coating is one or more the lamination in silica, carborundum, aluminium oxide, silicon nitride or the amorphous silicon membrane, and the anti-reflection film of this coating is a silicon nitride film.
Preferably, this second passivation layer is one or more the lamination in silica, carborundum, aluminium oxide, silicon nitride or the amorphous silicon membrane.Surface passivation can reduce semi-conductive surface activity; The recombination rate on surface is reduced; Its main mode is the dangling bonds at saturated semiconductor surface place, reduces surface activity, increases the cleaning procedure on surface; Avoid reducing the recombination velocity of minority carrier with this owing to impurity forms the complex centre in the introducing of superficial layer.Through surface passivation, make surface recombination reduce, thereby improve effective minority carrier life time.Anti-reflection film can reduce surperficial sun reflection of light, improves the utilance of sunlight, adopts above-mentioned coating to be the effective means that improves the solar cell photoelectric conversion efficiency.
Preferably; Has first contact hole in second passivation layer corresponding with this P type heavily doped region; Has second contact hole in second passivation layer corresponding with this N type heavily doped region; Wherein, this positive electrode is connected to this P type heavily doped region through this first contact hole, and this negative electrode is connected to this N type heavily doped region through this second contact hole.Positive electrode has just formed a little with semi-conducting material with negative electrode and has contacted like this, has further reduced contact resistance.
The present invention provides a kind of manufacture method of aforesaid solar cell, and its characteristics are that it may further comprise the steps:
Step S 1, the first area that in the back side of N type substrate, is used to contact positive electrode forms P type heavily doped region; Second area in the back side of N type substrate forms this P type lightly doped region, and wherein this second area is the zone around this P type heavily doped region; In the back side of N type substrate, be used to contact the 3rd zone formation N type heavily doped region of negative electrode; The 4th zone in the back side of N type substrate forms this N type lightly doped region; Wherein the 4th zone is the zone around this N type heavily doped region; Wherein this P type heavily doped region does not contact with this N type heavily doped region mutually; This N type lightly doped region of this P type heavily doped region does not contact mutually, and this N type heavily doped region does not contact with this P type lightly doped region mutually; The sequencing that wherein forms P type heavily doped region, P type lightly doped region, N type heavily doped region and N type lightly doped region is not limit.The mode that can utilize many mask plates and adopt ion to inject forms above-mentioned P type heavily doped region, P type lightly doped region and N type heavily doped region.Again for example, through being that silicon dioxide, amorphous silicon, polysilicon or the silicon nitride film of 10-50 μ m is as mask plate at N type backside of substrate growth thickness;
Step S 2, form coating on the surface of this wafers doped, this coating be first passivation layer and and anti-reflection film;
Step S 3, form second passivation layer at the back side of this wafers doped;
Step S 4, form positive electrode and negative electrode at the back side of this wafers doped, wherein, this positive electrode is formed on this P type heavily doped region, this negative electrode is formed on this N type heavily doped region;
Step S 5, this wafers doped of sintering, make the metallic element of positive electrode and negative electrode and wafers doped eutectic compound,
Wherein, when described P type replaced with the N type, the N type replaced with the P type simultaneously.
Preferably, step S 1Further comprising the steps of:
The first area that the mode of injecting through ion is injected into P type ion this N type backside of substrate and second area are with at first area and second area formation P type heavily doped region, and wherein the dosage of P type ion is a;
The 3rd zone that the mode of injecting through ion is injected into N type ion this N type backside of substrate and second area are to form N type heavily doped region and at second area formation P type lightly doped region in the 3rd zone; Wherein the dosage of N type ion is b, and b is less than a.Specifically; Only need use two mask plates to get final product; Because second area is P type heavily doped region originally,, reduced the P type ion concentration of second area therefore in the process of injecting N type ion; Naturally formed P type lightly doped region, this method has reduced the usage quantity of processing step and mask plate.
Equally preferably, step S 1The step of middle formation N type lightly doped region is further comprising the steps of:
The 4th zone that the mode of injecting through ion is injected into P type ion this N type backside of substrate is to form N type lightly doped region in the 4th zone.
Preferably, step S 1In obtain before the wafers doped further comprising the steps of:
Step S P, form N type doped layer or P type doped layer on the surface of this N type substrate.Forming N type doped layer or P type doped layer can be before or after P type heavily doped region, P type lightly doped region, N type heavily doped region and N type lightly doped region forms; Preferably;, P type heavily doped region, P type lightly doped region, N type heavily doped region and N type lightly doped region adopt the mode of thermal diffusion to form this N type doped layer or P type doped layer after forming; Like this, thermal diffusion step can also be as the annealing steps of ion injection before.
Preferably, step S 1In form this P type heavily doped region through quickening P type ion to 500eV-50keV and the mode injected through ion, the square resistance that makes this P type heavily doped region is 10-50 Ω/.Preferably, P type ion is accelerated to 1keV-40keV, and more preferably, P type ion is accelerated to 5keV-30keV.
Preferably, step S 1Form this N type heavily doped region through quickening N type ion to 500eV-50keV and the mode injected through ion, the square resistance that makes this N type heavily doped region is 10-50 Ω/.Preferably, N type ion is accelerated to 1keV-40keV, and more preferably, N type ion is accelerated to 5keV-30keV.
Preferably, step S 2In form coating through PECVD (plasma enhanced chemical vapor deposition method), first passivation layer of this coating is one or more the lamination in silica, carborundum, aluminium oxide, silicon nitride or the amorphous silicon membrane, the anti-reflection film of this coating is a silicon nitride film.
Preferably, step S 3In form second passivation layer through PECVD, this second passivation layer is one or more the lamination in silica, carborundum, aluminium oxide, silicon nitride or the amorphous silicon membrane.
Preferably, step S 4Middle silver slurry or the silver-colored aluminium paste of adopting also passes through silk screen printing method for producing positive electrode and/or negative electrode.Certainly, the method for making electrode is not limited to silk screen printing.
Preferably, step S 4Further comprising the steps of:
Step S 41, in second passivation layer corresponding, form first contact hole with this P type heavily doped region, and in second passivation layer corresponding with this N type heavily doped region formation second contact hole;
Step 8 42, form positive electrode and negative electrode at the back side of this wafers doped, wherein, this positive electrode is connected to this P type heavily doped region through this first contact hole, this negative electrode is connected to this N type heavily doped region through this second contact hole.Positive electrode has just formed a little with semi-conducting material with negative electrode and has contacted like this, has further reduced contact resistance.
Preferably, the minimum range of this P type heavily doped region and this N type heavily doped region is at least 10 μ m.More preferably, the minimum range of this P type heavily doped region and this N type heavily doped region is 10-70 μ m.
Only need be in said process; The impurity material that the mode that transposing base material and ion inject or diffusion is grown is mixed; Then this method is equally applicable to the making of P type solar energy wafers doped and P type solar cell, and when promptly described N type replaced with the P type, the P type replaced with the N type simultaneously.
Positive progressive effect of the present invention is:
1, has N type base material as resilient coating between P type heavily doped region and the N type heavily doped region among the present invention; Make and can not cause breakdown between the PN junction because depletion layer is too thin; Improved the useful life of this wafers doped thus; Simultaneously owing between P type heavily doped region and N type base material, also be provided with P type lightly doped region and N type lightly doped region; The PN junction of the P+/P-/N/N-/N+ structure that forms thus makes mobility of charge carrier more even, and speed is more stable, and the Solar cell performance that makes thus is more stable.
2, compared with adopting photoetching process to make back of the body junction battery, the present invention has simplified processing step, need not to buy mask aligner, and cost reduces greatly.
3, adopt the ion injection to mix and form P type heavily doped region, P type lightly doped region and N type heavily doped region, N type lightly doped region; The concentration of dopant ion has obtained accurate control, and is more favourable to the efficient that improves opto-electronic conversion compared with the doping of thermal diffusion process.
Description of drawings
Fig. 1 a-Fig. 4 a is the decomposition step sketch map of the described doping method of embodiments of the invention 1-4.
Fig. 1 a-Fig. 6 a is the decomposition step sketch map of the manufacture method of the described solar cell of embodiments of the invention 5-6.
Fig. 1 a-Fig. 4 a and Fig. 5 b are the decomposition step sketch map of the described doping method of embodiments of the invention 7-9.
Fig. 1 a-Fig. 4 a and Fig. 5 b-7b are the decomposition step sketch map of the manufacture method of embodiments of the invention 10 described solar cells.
Fig. 1 c-Fig. 3 c is the decomposition step sketch map of embodiments of the invention 11 described doping methods.
Fig. 1 c-Fig. 5 c is the decomposition step sketch map of the manufacture method of embodiments of the invention 12 described solar cells.
Fig. 1 c-Fig. 3 c and Fig. 4 d are the decomposition step sketch map of embodiments of the invention 13 described doping methods.
Fig. 1 c-Fig. 3 c and Fig. 4 d-Fig. 6 d are the decomposition step sketch map of the manufacture method of embodiments of the invention 14 described solar cells.
Embodiment
Provide preferred embodiment of the present invention below in conjunction with accompanying drawing, to specify technical scheme of the present invention.
Embodiment 1
With reference to figure 1a, in the back side of N type substrate 1, be used to contact the first area formation P type heavily doped region 21 of positive electrode.Specifically; This first mask plate 10 is placed the back side of N type substrate 1; Quickening the back side that mode that the boron ion injects to 500eV and through ion is not injected into this N type substrate 1 by first mask plate, 10 region covered from the back side of this N type substrate 1 is the P type heavily doped region 21 of 10 Ω/ to form square resistance, wherein is not the first area that is used to contact positive electrode by first mask plate, 10 region covered.Arrow is depicted as the direction that ion injects among the figure, has been merely to make to it will be apparent to those skilled in the art that and the present invention should not be construed as limitation of the present invention.
With reference to figure 2a, in the back side of N type substrate 1, be used to contact the 3rd zone formation N type heavily doped region 31 of negative electrode, wherein this N type heavily doped region 31 does not contact with this P type heavily doped region 21 mutually.Specifically; This second mask plate 11 is placed the back side of N type substrate 1; Quickening the back side that mode that phosphonium ion injects to 500eV and through ion is not injected into this N type substrate 1 by second mask plate, 11 region covered from the back side of this N type substrate 1 is the N type heavily doped region 31 of 10 Ω/ to form square resistance, wherein is not the 3rd zone that is used to contact negative electrode by second mask plate, 11 region covered.In the present embodiment, this P type heavily doped region 21 is 20 μ m with the minimum range of this N type heavily doped region 31.
With reference to figure 3a, the second area in the back side of N type substrate 1 forms this P type lightly doped region 22, and wherein this second area is the zone around this P type heavily doped region 21.Specifically; The 3rd mask plate 12 is placed the back side of N type substrate 1, and quickening the back side that mode that the boron ion injects to 500eV and through ion is not injected into this N type substrate 1 by the 3rd mask plate 12 region covered from the back side of this N type substrate 1 is the P type lightly doped region 22 of 60 Ω/ to form square resistance.
With reference to figure 4a, the 4th zone in the back side of N type substrate 1 forms this N type lightly doped region 32, and wherein the 4th zone is the zone around this N type heavily doped region 31.Specifically; The 4th mask plate 13 is placed the back side of N type substrate 1, and quickening the back side that mode that the boron ion injects to 500eV and through ion is not injected into this N type substrate 1 by the 4th mask plate 12 region covered from the back side of this N type substrate 1 is the N type lightly doped region 32 of 60 Ω/ to form square resistance.In the present embodiment, the width of this P type heavily doped region is 1000 μ m, and the width of N type heavily doped region is 250 μ m, and the width of this P type lightly doped region and this N type lightly doped region is 5 μ m.Remove the 4th mask plate 13, and annealing is to activate dopant ion to obtain the wafers doped of P+/P-/N/N+ structure.Annealing conditions is conventional the selection.
Embodiment 2
The principle of embodiment 2 is identical with embodiment 1, and its main technique step is also identical, and difference only is following technology and parameters of choice:
With reference to figure 1a, quickening the back side that mode that the boron ion injects to 50keV and through ion is not injected into this N type substrate 1 by first mask plate, 10 region covered from the back side of this N type substrate 1 is the P type heavily doped region 21 of 50 Ω/ to form square resistance.
With reference to figure 2a, quickening the back side that mode that phosphonium ion injects to 50keV and through ion is not injected into this N type substrate 1 by second mask plate, 11 region covered from the back side of this N type substrate 1 is the N type heavily doped region 31 of 50 Ω/ to form square resistance.In the present embodiment, this P type heavily doped region 21 is 70 μ m with the minimum range of this N type heavily doped region 31.
With reference to figure 3a, quickening the back side that mode that the boron ion injects to 50keV and through ion is not injected into this N type substrate 1 by the 3rd mask plate 12 region covered from the back side of this N type substrate 1 is the P type lightly doped region 22 of 120 Ω/ to form square resistance.
With reference to figure 4a, quickening the back side that mode that the boron ion injects to 50keV and through ion is not injected into this N type substrate 1 by the 4th mask plate 13 region covered from the back side of this N type substrate 1 is the N type lightly doped region 32 of 120 Ω/ to form square resistance.In the present embodiment, the width of this P type heavily doped region is 3000 μ m, and the width of N type heavily doped region is 700 μ m, and the width of this P type lightly doped region and this N type lightly doped region is 35 μ m.
All the other NM processing steps are identical with embodiment 1 with parameter.
Embodiment 3
The principle of embodiment 3 is identical with embodiment 1, and its main technique step is also identical, and difference only is following technology and parameters of choice:
With reference to figure 1a, quickening the back side that mode that the boron ion injects to 30keV and through ion is not injected into this N type substrate 1 by first mask plate, 10 region covered from the back side of this N type substrate 1 is the P type heavily doped region 21 of 30 Ω/ to form square resistance.
With reference to figure 2a, quickening the back side that mode that phosphonium ion injects to 30keV and through ion is not injected into this N type substrate 1 by second mask plate, 11 region covered from the back side of this N type substrate 1 is the N type heavily doped region 31 of 40 Ω/ to form square resistance.In the present embodiment, this P type heavily doped region 21 is 50 μ m with the minimum range of this N type heavily doped region 31.
With reference to figure 3a, quickening the back side that mode that the boron ion injects to 30keV and through ion is not injected into this N type substrate 1 by the 3rd mask plate 12 region covered from the back side of this N type substrate 1 is the P type lightly doped region 22 of 100 Ω/ to form square resistance.
With reference to figure 4a, quickening the back side that mode that the boron ion injects to 50keV and through ion is not injected into this N type substrate 1 by the 4th mask plate 13 region covered from the back side of this N type substrate 1 is the N type lightly doped region 32 of 100 Ω/ to form square resistance.In the present embodiment, the width of this P type heavily doped region is 2000 μ m, and the width of N type heavily doped region is 500 μ m, and the width of this P type lightly doped region is 30 μ m, and the width of this N type lightly doped region is 20 μ m.
All the other NM processing steps are identical with embodiment 1 with parameter.
Embodiment 4
With reference to figure 1a-Fig. 4 a; The principle of embodiment 4 is identical with embodiment 1, and its main technique step is also identical, and difference only is to form the order of P type heavily doped region 21, N type heavily doped region 31, P type lightly doped region 22 and N type lightly doped region 32; In the present embodiment; At first form N type heavily doped region 31, then form P type heavily doped region 21, P type lightly doped region 22 and N type lightly doped region 32, concrete generation type is identical with embodiment 1 with technological parameter.
Embodiment 5
After obtaining the wafers doped shown in Fig. 4 a according to the described doping method of embodiment 1, according to the following steps manufacturing solar cells:
With reference to figure 5a, form coating 5 on the surface of this wafers doped, this coating 5 be first passivation layer and and anti-reflection film, adopt the method for PECVD to form coating 5 in the present embodiment, wherein this first passivation layer is a silicon oxide film, this anti-reflection film is a silicon nitride film.Form second passivation layer 51 at the back side of this wafers doped, this second passivation layer 51 of method formation that adopts silicon oxide film in the present embodiment and pass through PECVD.
With reference to figure 6a; The back side in this wafers doped forms positive electrode 61 and negative electrode 62; Wherein, this positive electrode 61 is formed on this P type heavily doped region 21, and this negative electrode 62 is formed on this N type heavily doped region 31; Specifically, adopt silver slurry and said positive electrode of silk screen printing method for producing and negative electrode.This wafers doped of sintering makes the metallic element of positive electrode and negative electrode and wafers doped eutectic compound, for example 850 ℃ of sintering 10 minutes, obtains the solar cell shown in Fig. 6 a.
Embodiment 6
The principle of embodiment 6 is identical with embodiment 5, and its main technique step is also identical, and difference only is following technology and parameters of choice:
Said first passivation layer and anti-reflection film are silicon nitride film.
With reference to figure 6a, the step of making electrode is further comprising the steps of:
In second passivation layer corresponding, form first contact hole with this P type heavily doped region 21, and in second passivation layer corresponding with this N type heavily doped region 31 formation second contact hole;
The back side in this wafers doped forms positive electrode 61 and negative electrode 62, and wherein, this positive electrode 61 is connected to this P type heavily doped region 21 through this first contact hole, and this negative electrode 31 is connected to this N type heavily doped region 31 through this second contact hole.
All the other NM processing steps, parameter are identical with embodiment 5.
Embodiment 7
With reference to figure 1a-Fig. 4 a, after the structure of embodiment 1 described doping method acquisition shown in Fig. 4 a, further comprising the steps of:
With reference to figure 5b; Remove after the 4th mask plate 13; Afterwards, heat-treat the structure shown in Fig. 5 b with the N type doped layer 41 of formation as the front surface field on the surface that the acceleration phosphonium ion is injected into phosphonium ion this N type substrate to 500eV and through the mode that ion injects; Obtain wafers doped to activate dopant ion, heat-treat condition is conventional the selection.
All the other NM processing steps, parameter are identical with embodiment 1.
Embodiment 8
With reference to figure 1a-Fig. 4 a, after the structure of embodiment 1 described doping method acquisition shown in Fig. 4 a, further comprising the steps of:
With reference to figure 5b; Remove after the 4th mask plate 13; Method through thermal diffusion forms the N type doped layer 41 as the front surface field on the surface of this N type substrate; This thermal diffusion also as the annealing steps of ion injection before, activates dopant ion thus and obtains wafers doped, and heat-treat condition is conventional the selection.
All the other NM processing steps, parameter are identical with embodiment 1.
Embodiment 9
The principle of embodiment 9 is identical with embodiment 7; Its main technique step is also identical; Difference only is to be infused in the P type doped layer of the surface formation of this N type substrate as the front surface field through the ion of boron ion, and heat treatment afterwards is to obtain wafers doped, and heat-treat condition is conventional the selection.
All the other NM processing steps, parameter are identical with embodiment 7.
Embodiment 10
With reference to figure 1a-4a and Fig. 5 b; After the wafers doped of processing step acquisition shown in Fig. 5 b according to embodiment 7; With reference to figure 6b and Fig. 7 b; Obtain the solar cell shown in Fig. 7 b according to embodiment 5 described processing steps, comprise that the coating of first passivation layer and anti-reflection film is positioned at the surface of this N type doped layer 41 this moment.
Embodiment 11
With reference to figure 1c; Quicken the back side that mode that the boron ion injects to 50keV and through ion is not injected into this N type substrate 1 by the 3rd mask plate 12 region covered from the back side of this N type substrate 1 to form P type heavily doped region 21, wherein the dopant dose of boron ion is a.
With reference to figure 2c; One the 5th mask plate 14 is placed the back side of this N type substrate 1; Quicken the back side that mode that phosphonium ion injects to 50keV and through ion is not injected into this N type substrate 1 by the 5th mask plate 14 region covered from the back side of this N type substrate 1 to form N type heavily doped region 31 in the 3rd zone and to form P type lightly doped region 22 at second area; Wherein the dopant dose of phosphonium ion is b, and b＜a.
With reference to figure 3c, the 4th mask plate 13 is placed the back side of this N type substrate 1, acceleration boron ion injects the boron ion through ion mode is injected into the 4th zone to form N type lightly doped region 32, obtains the wafers doped shown in Fig. 3 c thus.
All the other NM technological parameters are identical with embodiment 1.
Embodiment 12
With reference to figure 1c-3c, after embodiment 11 described method steps acquisition wafers doped,, obtain the solar cell shown in Fig. 5 c according to embodiment 5 described processing steps with reference to figure 4c-5c.
Embodiment 13
With reference to figure 1c-3c, after the structure of embodiment 11 described method steps acquisitions shown in Fig. 3 c, with reference to figure 4d, the mode of injecting through ion forms N type doped layer 41 on the surface of N type substrate 1, and heat treatment afterwards is to obtain the wafers doped shown in Fig. 4 d.
Embodiment 14
With reference to figure 1c-3c; Fig. 4 d-6d; After the wafers doped of embodiment 13 said acquisitions shown in Fig. 4 d, obtain the solar cell shown in Fig. 6 d according to embodiment 5 described processing steps, comprise that the coating of first passivation layer and anti-reflection film is positioned at the surface of this N type doped layer 41 this moment.
Only need be in said process, the impurity material that the mode that transposing base material and ion inject or diffusion is grown is mixed, then this method is equally applicable to the making of P type solar energy wafers doped, and when promptly described N type replaced with the P type, the P type replaced with the N type simultaneously.
In order to clearly illustrate each doped region, the size of each doped region is not to describe in proportion in the accompanying drawing, and those skilled in the art are to be understood that the ratio in the accompanying drawing is not a limitation of the present invention.
Though more than described embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is limited appended claims.Those skilled in the art can make numerous variations or modification to these execution modes under the prerequisite that does not deviate from principle of the present invention and essence, but these changes and modification all fall into protection scope of the present invention.

Claims (28)

1. a doping unit is characterized in that, this doping unit comprises:
One N type substrate;
Be formed at P type heavily doped region and N type heavily doped region in this N type backside of substrate;
Be formed at this P type heavily doped region P type lightly doped region on every side;
Be formed at this N type heavily doped region N type lightly doped region on every side;
Wherein, this P type heavily doped region does not contact with this N type heavily doped region mutually, and this N type lightly doped region of this P type heavily doped region does not contact mutually, and this N type heavily doped region do not contact with this P type lightly doped region mutually,
Wherein, when described P type replaced with the N type, the N type replaced with the P type simultaneously.
2. doping as claimed in claim 1 unit is characterized in that, this doping unit also comprises N type doped layer or the P type doped layer that is positioned at this N type substrate surface.
3. doping as claimed in claim 1 unit is characterized in that, the minimum range of this P type heavily doped region and this N type heavily doped region is at least 10 μ m.
4. doping as claimed in claim 1 unit is characterized in that, the width of this P type heavily doped region is that the width of 1000-3000 μ m and/or N type heavily doped region is 250-700 μ m.
5. doping as claimed in claim 1 unit is characterized in that, the width of this P type lightly doped region and/or N type lightly doped region is 5-50 μ m.
6. doping as claimed in claim 1 unit is characterized in that, the square resistance of this P type heavily doped region and/or this N type heavily doped region is 10-50 Ω/.
7. doping as claimed in claim 1 unit is characterized in that, the square resistance of this P type lightly doped region and/or this N type lightly doped region is 60-120 Ω/.
8. a wafers doped is characterized in that, it comprises a plurality of like any described doping unit among the claim 1-7.
9. doping method of making wafers doped as claimed in claim 8 is characterized in that it may further comprise the steps:
In the back side of N type substrate, be used to contact the first area formation P type heavily doped region of positive electrode;
Second area in the back side of N type substrate forms this P type lightly doped region, and wherein this second area is the zone around this P type heavily doped region;
In the back side of N type substrate, be used to contact the 3rd zone formation N type heavily doped region of negative electrode;
The 4th zone in the back side of N type substrate forms this N type lightly doped region; Wherein the 4th zone is the zone around this N type heavily doped region; Wherein this P type heavily doped region does not contact with this N type heavily doped region mutually; This N type lightly doped region of this P type heavily doped region does not contact mutually, and this N type heavily doped region does not contact with this P type lightly doped region mutually
Wherein, when described P type replaced with the N type, the N type replaced with the P type simultaneously.
10. doping method as claimed in claim 9 is characterized in that, the step that forms P type heavily doped region, P type lightly doped region and N type heavily doped region in this doping method is further comprising the steps of:
The first area that the mode of injecting through ion is injected into P type ion this N type backside of substrate and second area are with at first area and second area formation P type heavily doped region, and wherein the dosage of P type ion is a;
The 3rd zone that the mode of injecting through ion is injected into N type ion this N type backside of substrate and second area are to form N type heavily doped region and at second area formation P type lightly doped region in the 3rd zone; Wherein the dosage of N type ion is b, and b is less than a.
11. doping method as claimed in claim 9 is characterized in that, the step that forms N type lightly doped region in this doping method is further comprising the steps of:
The 4th zone that the mode of injecting through ion is injected into P type ion this N type backside of substrate is to form N type lightly doped region in the 4th zone.
12. doping method as claimed in claim 9 is characterized in that, this doping method is further comprising the steps of:
Step S P, form N type doped layer or P type doped layer on the surface of this N type substrate.
13. like any described doping method among the claim 9-12; It is characterized in that; Form this P type heavily doped region through quickening P type ion to 500eV-50keV and the mode injected through ion, the square resistance that makes this P type heavily doped region is 10-50 Ω/.
14. like any described doping method among the claim 9-12; It is characterized in that; Form this N type heavily doped region through quickening N type ion to 500eV-50keV and the mode injected through ion, the square resistance that makes this N type heavily doped region is 10-50 Ω/.
15. a solar cell is characterized in that it comprises wafers doped as claimed in claim 8, this solar cell also comprises:
Be formed at this wafers doped coating surfaces, this coating be first passivation layer and and anti-reflection film;
Be formed at second passivation layer at this wafers doped back side;
Be positioned at the positive electrode at this P type heavily doped region back side; And
Be positioned at the negative electrode at this N type heavily doped region back side,
Wherein, when described P type replaced with the N type, the N type replaced with the P type simultaneously.
16. solar cell as claimed in claim 15 is characterized in that, first passivation layer of this coating is one or more the lamination in silica, carborundum, aluminium oxide, silicon nitride or the amorphous silicon membrane, and the anti-reflection film of this coating is a silicon nitride film.
17. solar cell as claimed in claim 15 is characterized in that, this second passivation layer is one or more the lamination in silica, carborundum, aluminium oxide, silicon nitride or the amorphous silicon membrane.
18. like any described solar cell among the claim 15-17; It is characterized in that; Have first contact hole in second passivation layer corresponding, have second contact hole in second passivation layer corresponding, wherein with this N type heavily doped region with this P type heavily doped region; This positive electrode is connected to this P type heavily doped region through this first contact hole, and this negative electrode is connected to this N type heavily doped region through this second contact hole.
19. the manufacture method of a solar cell as claimed in claim 15 is characterized in that, it may further comprise the steps:
Step S 1, the first area that in the back side of N type substrate, is used to contact positive electrode forms P type heavily doped region; Second area in the back side of N type substrate forms this P type lightly doped region, and wherein this second area is the zone around this P type heavily doped region; In the back side of N type substrate, be used to contact the 3rd zone formation N type heavily doped region of negative electrode; The 4th zone in the back side of N type substrate forms this N type lightly doped region; Wherein the 4th zone is the zone around this N type heavily doped region; Wherein this P type heavily doped region does not contact with this N type heavily doped region mutually; This N type lightly doped region of this P type heavily doped region does not contact mutually, and this N type heavily doped region does not contact with this P type lightly doped region mutually;
Step S 2, form coating on the surface of this wafers doped, this coating be first passivation layer and and anti-reflection film;
Step S 3, form second passivation layer at the back side of this wafers doped;
Step S 4, form positive electrode and negative electrode at the back side of this wafers doped, wherein, this positive electrode is formed on this P type heavily doped region, this negative electrode is formed on this N type heavily doped region;
Step S 5, this wafers doped of sintering, make the metallic element of positive electrode and negative electrode and wafers doped eutectic compound,
Wherein, when described P type replaced with the N type, the N type replaced with the P type simultaneously.
20. manufacture method as claimed in claim 19 is characterized in that, step S 1The step of middle formation P type heavily doped region, P type lightly doped region and N type heavily doped region is further comprising the steps of:
The first area that the mode of injecting through ion is injected into P type ion this N type backside of substrate and second area are with at first area and second area formation P type heavily doped region, and wherein the dosage of P type ion is a;
The 3rd zone that the mode of injecting through ion is injected into N type ion this N type backside of substrate and second area are to form N type heavily doped region and at second area formation P type lightly doped region in the 3rd zone; Wherein the dosage of N type ion is b, and b is less than a.
21. manufacture method as claimed in claim 19 is characterized in that, step S 1The step of middle formation N type lightly doped region is further comprising the steps of:
The 4th zone that the mode of injecting through ion is injected into P type ion this N type backside of substrate is to form N type lightly doped region in the 4th zone.
22. manufacture method as claimed in claim 19 is characterized in that, step S 1In obtain before the wafers doped further comprising the steps of:
Step S P, form N type doped layer or P type doped layer on the surface of this N type substrate.
23., it is characterized in that step S like any described manufacture method of claim 19-22 1In form this P type heavily doped region through quickening P type ion to 500eV-50keV and the mode injected through ion, the square resistance that makes this P type heavily doped region is 10-50 Ω/.
24., it is characterized in that step S like any described manufacture method of claim 19-22 1Form this N type heavily doped region through quickening N type ion to 500eV-50keV and the mode injected through ion, the square resistance that makes this N type heavily doped region is 10-50 Ω/.
25., it is characterized in that step S like any described manufacture method of claim 19-22 2In form coating through PECVD, first passivation layer of this coating is one or more the lamination in silica, carborundum, aluminium oxide, silicon nitride or the amorphous silicon membrane, the anti-reflection film of this coating is a silicon nitride film.
26., it is characterized in that step S like any described manufacture method of claim 19-22 3In form second passivation layer through PECVD, this second passivation layer is one or more the lamination in silica, carborundum, aluminium oxide, silicon nitride or the amorphous silicon membrane.
27., it is characterized in that step S like any described manufacture method of claim 19-22 4Middle silver slurry or the silver-colored aluminium paste of adopting also passes through silk screen printing method for producing positive electrode and/or negative electrode.
28., it is characterized in that step S like any described manufacture method of claim 19-22 4Further comprising the steps of:
Step S 41, in second passivation layer corresponding, form first contact hole with this P type heavily doped region, and in second passivation layer corresponding with this N type heavily doped region formation second contact hole;
Step S 42, form positive electrode and negative electrode at the back side of this wafers doped, wherein, this positive electrode is connected to this P type heavily doped region through this first contact hole, this negative electrode is connected to this N type heavily doped region through this second contact hole.
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