CN206225381U - High-efficiency multi-junction solar cell - Google Patents
High-efficiency multi-junction solar cell Download PDFInfo
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- CN206225381U CN206225381U CN201621282952.8U CN201621282952U CN206225381U CN 206225381 U CN206225381 U CN 206225381U CN 201621282952 U CN201621282952 U CN 201621282952U CN 206225381 U CN206225381 U CN 206225381U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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Abstract
High-efficiency multi-junction solar cell of the present utility model, technical purpose is to provide a kind of high-efficiency multi-junction solar cell for possessing 3 knot above structures.The electrification structure of the solar cell, includes silicon chip, and the silicon chip is provided with coating is respectively from top to bottom：N-type layer, N+ types layer, P+ type layer, P-type layer, P+ type layer, N+ types layer, N-type layer；PN junction layer is formed respectively, and the PN junction layer top forms N+N height knot layers, the PN junction layer P+P formed below low layers high；Down sequentially form P+P height knots layer, PN junction layer, N+N height knot layers.The utility model cell piece conversion efficiency more than 36%.Suitable for optical energy power field.
Description
Technical field
The utility model is related to a kind of solar cell, in particular, is related to a kind of high-efficiency multi-junction solar cell.
Background technology
Solar energy power generating is the photovoltaic effect using semiconductor, using PN junction built in field effect by light
The photoproduction imbalance carrier collection that son is produced gets up to produce electric current.The core component of solar energy power generating is exactly solar energy
Cell piece.Solar battery sheet is that certain density group iii elements boron gallium aluminium indium is spread in silicon chip substrate, and one is then spread again
Determine the group-v element nitrogen phosphorus arsenic tellurium of concentration, the PN junction of specific thicknesses is formed between III-V and silicon compound.Influence solar-electricity
The factor of pond piece conversion efficiency mainly has：Cell piece reflectivity, PN junction diffusion depth, diffusion square resistance, silicon substrate resistivity,
Silicon substrate minority carrier life time, electrode ohmic contact potential barrier.The low problem of the efficiency of conventional crystalline silicon battery is directed to, to improve cell piece
Absorptivity, few sub- generation rate and mobility are improved, as those skilled in the art's technical problem anxious to be resolved.
The content of the invention
Technical purpose of the present utility model be overcome solar battery sheet in the prior art exist light absorption it is low and
Conversion efficiency technical problem not high；A kind of high-efficiency multi-junction solar cell for possessing 3 knot above structures is provided.
To realize above technical purpose, the technical solution of the utility model is：
High-efficiency multi-junction solar cell, the electrification structure of the solar cell includes silicon chip, is set on the silicon chip
Having coating is respectively from top to bottom：N-type layer, N+ types layer, P+ type layer, P-type layer, P+ type layer, N+ types layer, N-type layer；PN is formed respectively
Knot layer, the PN junction layer top forms N+N height knot layers, the PN junction layer P+P formed below low layers high；Down sequentially form P+
P height knots layer, PN junction layer, N+N height knot layers.
Advantageous Effects of the present utility model are：Be changed to for the single PN junction technique of crystal silicon solar batteries piece by the present invention
Many PN junction techniques.And manufacture a kind of inverted pyramid light trapping structure in silicon chip surface；It is combined using H passivation technologies repairing silicon chip surface
Center.Using six segmentation diffusion techniques.Using pre-passivating pecvd process, hydrogen passivation layer is formed on cell piece surface.The present invention is too
Positive energy cell piece double-side photic generates electricity.Cell piece of the present invention has inverted pyramid light trapping structure.The utility model solar battery sheet
Internal PN junction is 3 knot above structures.Cell piece manufacturing process of the present invention has pre-passivating technique.Cell piece conversion efficiency of the present invention
More than 36%.Light wave absorption region of the present invention is 300-1100 nanometers.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model one embodiment.
Specific embodiment
With reference to Fig. 1, specific embodiment of the present utility model is described in detail, but claim is not limited in any way.
High-efficiency multi-junction solar cell of the present utility model, the electrification structure of the solar cell, includes silicon chip,
The silicon chip is provided with coating：N-type layer 100, N+ types layer 101, P+ type layer 102, P-type layer 103, P+ type layer
102nd, N+ types layer 101, N-type layer 100；PN junction layer is formed respectively, and the PN junction layer top forms N+N height knot layers, the PN junction
Layer P+P low layers high formed below；Down sequentially form P+P height knots layer, PN junction layer, N+N height knot layers.
The utility model in force, a kind of inverted pyramid light trapping structure is manufactured in silicon chip surface；Repaiied using H passivation technologies
Mend silicon chip surface complex centre.Six segmentation diffusion techniques are used when implementing, and using pre-passivating pecvd process in cell piece table
Face forms hydrogen passivation layer.Solar battery sheet double-side photic of the present invention generates electricity.Cell piece of the present invention has inverted pyramid light trapping structure.
The utility model solar battery sheet inside PN junction is 3 knot above structures.Cell piece manufacturing process of the present invention has pre-passivating technique.
Cell piece conversion efficiency more than 36% of the present invention.Light wave absorption region of the present invention is 300-1100 nanometers.
Claims (1)
1. high-efficiency multi-junction solar cell, it is characterized in that：The electrification structure of the solar cell includes silicon chip, the silicon
Piece is provided with coating：N-type layer, N+ types layer, P+ type layer, P-type layer, P+ type layer, N+ types layer, N-type layer；Respectively
PN junction layer is formed, the PN junction layer top forms N+N height knot layers, the PN junction layer P+P formed below low layers high；Down successively
Form P+P height knots layer, PN junction layer, N+N height knot layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621282952.8U CN206225381U (en) | 2016-11-28 | 2016-11-28 | High-efficiency multi-junction solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621282952.8U CN206225381U (en) | 2016-11-28 | 2016-11-28 | High-efficiency multi-junction solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206225381U true CN206225381U (en) | 2017-06-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621282952.8U Active CN206225381U (en) | 2016-11-28 | 2016-11-28 | High-efficiency multi-junction solar cell |
Country Status (1)
| Country | Link |
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| CN (1) | CN206225381U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110460141A (en) * | 2019-07-29 | 2019-11-15 | 普联技术有限公司 | It is a kind of to support solar powered wireless device |
-
2016
- 2016-11-28 CN CN201621282952.8U patent/CN206225381U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110460141A (en) * | 2019-07-29 | 2019-11-15 | 普联技术有限公司 | It is a kind of to support solar powered wireless device |
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