CN111162145A - Passivated contact solar cell with selective emitter structure and preparation method thereof - Google Patents
Passivated contact solar cell with selective emitter structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 82
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- 239000013078 crystal Substances 0.000 claims abstract description 46
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 44
- 238000000137 annealing Methods 0.000 claims abstract description 39
- 238000009792 diffusion process Methods 0.000 claims abstract description 34
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000002161 passivation Methods 0.000 claims abstract description 27
- 230000005641 tunneling Effects 0.000 claims abstract description 24
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052796 boron Inorganic materials 0.000 claims abstract description 20
- 238000005468 ion implantation Methods 0.000 claims abstract description 18
- 238000005245 sintering Methods 0.000 claims abstract description 10
- 239000002002 slurry Substances 0.000 claims abstract description 10
- 238000001465 metallisation Methods 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 238000007639 printing Methods 0.000 claims description 12
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- 238000005234 chemical deposition Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000004332 silver Substances 0.000 description 10
- 238000001035 drying Methods 0.000 description 9
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 7
- 229910015900 BF3 Inorganic materials 0.000 description 5
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 4
- 229910015845 BBr3 Inorganic materials 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910000085 borane Inorganic materials 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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Abstract
The invention relates to a passivated contact solar cell with a selective emitter structure and a preparation method thereof. The method comprises the following steps: (1) preparing suede surfaces on two surfaces of the N-type crystal silicon substrate; (2) carrying out boron diffusion treatment on the texturing surface on the front surface of the substrate to form a lightly doped region layer; (3) local boron ion implantation is carried out on the light doped region layer by utilizing a mask, and annealing is carried out to form a local heavy doped region; (4) preparing a tunneling oxide layer on the textured surface of the back surface of the substrate, and preparing a phosphorus-doped polycrystalline silicon layer on the tunneling oxide layer; (5) preparing a silicon nitride antireflection layer on the phosphorus-doped polycrystalline silicon layer; preparing an aluminum oxide passivation layer on the lightly doped region layer on the front surface of the substrate, and preparing a silicon nitride antireflection layer on the aluminum oxide passivation layer; (6) and screen printing metallization slurry on both surfaces of the substrate, and sintering. The invention can obviously reduce the composite current on the surface of the emitter, thereby improving the efficiency of the N-type passivated contact battery by more than 0.2 percent.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a passivated contact solar cell with a selective emitter structure and a preparation method thereof.
Background
The N-type cell adopts N-type silicon as a substrate material, has good metal impurity pollution resistance and long minority carrier diffusion length, has the advantages of no light attenuation, higher cell efficiency and the like compared with the traditional p-type cell, and is favored by the market at present. The N-type passivated contact battery is a novel N-type battery structure, and the tunneling passivation layer provides good surface passivation for an N + surface, so that metal contact recombination is greatly reduced, and the open-circuit voltage and the short-circuit current of the battery are improved. The cell efficiency of the structure is far higher than that of the traditional crystal silicon cell product, so that the photovoltaic power generation cost is more favorably reduced.
The existing N-type passivated contact battery structure solves the problem of passivation of an N surface, but recombination of the surface of an emitter is still higher, which becomes a bottleneck of efficiency improvement, and two factors of passivation and contact resistance need to be considered for reducing the recombination of the surface of the emitter.
Compared with a phosphorus-doped emitter, because the activation difficulty of boron is much higher than that of phosphorus, the selective doping of boron is a world problem at present, and a mass-producible selective emitter preparation method with both efficiency and yield is not available, for example, the laser doping which is mature in the aspect of the phosphorus selective doping at present is not mature in the aspect of the boron doping.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a passivated contact solar cell with a selective emitter structure and a preparation method thereof.
The invention discloses a preparation method of a passivated contact solar cell, which adopts the technical scheme that: the method comprises the following steps:
(1) preparing suede surfaces on the back surface and the front surface of the N-type crystal silicon substrate;
(2) carrying out boron diffusion treatment on the texturing surface on the front surface of the N-type crystal silicon substrate to form a lightly doped region layer;
(3) carrying out local boron ion implantation on the lightly doped region layer of the N-type crystal silicon substrate by using a mask, and carrying out annealing treatment to form a local heavily doped region;
(4) preparing a tunneling oxide layer on the textured surface of the back surface of the N-type crystalline silicon substrate treated in the step (3), and preparing a phosphorus-doped polycrystalline silicon layer on the tunneling oxide layer;
(5) preparing a silicon nitride antireflection layer on the phosphorus-doped polycrystalline silicon layer on the back surface of the N-type crystal silicon substrate; preparing an aluminum oxide passivation layer on the lightly doped region layer on the front surface of the N-type crystal silicon substrate, and preparing a silicon nitride antireflection layer on the aluminum oxide passivation layer;
(6) performing screen printing metallization slurry treatment on the front surface and the back surface of the N-type crystal silicon substrate, and sintering; and the printing area of the metallization paste corresponds to the local heavily doped area on the front surface of the N-type crystalline silicon substrate.
The invention provides a preparation method of a passivated contact solar cell with a selective emitter structure, which also comprises the following subsidiary technical scheme:
wherein the resistivity of the N-type crystal silicon substrate is 0.3-5 omega cm, and the thickness is 80-200 mu m.
Wherein, in step (2), BBr is used3The gaseous source is a diffusion source for boron diffusion, the diffusion temperature is 900-1100 ℃, the diffusion time is 30-60min, after the diffusion is finished, the sheet resistance of the N-type crystalline silicon substrate is 80-200 omega/□, and the surface concentration is 5e18cm-3～2e19cm-3. In step (3), BF is used3Or B2H6And as a doping source, local boron ion implantation is carried out.
Wherein, BF3Energy of 5-20keV, dose 2e15-8e15cm-2，B2H6Energy of 1keV to 6keV, dose of 8e15 to 1.5e16cm-2；
The annealing temperature is 900-1100 ℃, the annealing time is 20-80min, and after the annealing is finished, the sheet resistance of the heavily doped region is 40-80 omega/□.
Wherein, in the step (4),
the thickness of the tunneling oxide layer is 0.5-3 nm, the manufacturing material is silicon dioxide, and the preparation method comprises thermal oxidation and HNO3Oxidation, O3Oxidation, or atomic layer deposition;
preparing a polycrystalline silicon layer on the tunneling oxide layer by adopting a low-pressure chemical deposition method, wherein the deposition temperature is 550-650 ℃, and after the deposition is finished, the thickness of the phosphorus-doped polycrystalline silicon layer is 50-400 nm;
and carrying out phosphorus doping on the polycrystalline silicon layer by adopting an ion implantation method, and carrying out annealing treatment to form a phosphorus-doped polycrystalline silicon layer.
Wherein, in the step (4),
performing doping treatment on the polysilicon layer by using phosphine or red phosphorus as a doping source, wherein the doping amount is 2e15-8e15cm-2；
After the doping is finished, annealing treatment is carried out to form the phosphorus-doped polysilicon layer, wherein the annealing temperature is 750-900 ℃, the time is 20-80min, and the doping sheet resistance is 20-100 omega/□.
In the step (5), the thickness of the silicon nitride antireflection layer is 50-150nm, and the silicon nitride antireflection layer is prepared by adopting a plasma enhanced chemical vapor deposition mode.
Wherein, in the step (5), the thickness of the aluminum oxide passivation layer is 1-10nm, and the aluminum oxide passivation layer is prepared by adopting an ALD or PECVD mode.
Wherein, in the step (6),
printing a back main grid and a back auxiliary grid on the back of the N-type crystal silicon substrate by silver paste, and drying, wherein the line width of the back auxiliary grid is 40-100 mu m and the back auxiliary grid is parallel to each other;
and printing a front main gate and a front auxiliary gate on the front surface of the N-type crystal silicon substrate by adopting aluminum-doped silver paste, and drying, wherein the line width of the front auxiliary gate is 40-100 mu m and the front auxiliary gate is parallel to each other.
The invention also discloses a passivated contact solar cell, which comprises an N-type crystal silicon substrate,
the front surface of the N-type crystal silicon substrate sequentially comprises a light doping layer, a local heavily doped region, an aluminum oxide passivation layer, a silicon nitride antireflection layer and a metal slurry layer from inside to outside;
the back surface of the N-type crystal silicon substrate sequentially comprises a tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer, a silicon nitride antireflection layer and a metal slurry layer from inside to outside.
The implementation of the invention comprises the following technical effects:
according to the invention, a mature boron tribromide gaseous source is used for diffusion treatment on a texturing surface on the front surface of an N-type crystalline silicon substrate to form a uniform light-doped area on the whole texturing surface on the front surface of the N-type crystalline silicon substrate, and then a local heavy-doped area is prepared on the light-doped area in an ion implantation manner. The novel preparation method of the boron-doped selective emitter is simple and effective, can obviously reduce the composite current on the surface of the emitter, thereby improving the efficiency of the N-type passivated contact battery by more than 0.2 percent.
Drawings
Fig. 1 is a schematic cross-sectional view of a cell structure after a first step of a method for manufacturing a passivated contact solar cell with a selective emitter structure according to an embodiment of the invention.
Fig. 2 is a schematic cross-sectional view of a cell structure after a second step of a method for manufacturing a passivated contact solar cell with a selective emitter structure according to an embodiment of the invention.
Fig. 3 is a schematic cross-sectional view of a cell structure after a third step of a method for manufacturing a passivated contact solar cell with a selective emitter structure according to an embodiment of the invention.
Fig. 4 is a schematic cross-sectional view of a cell structure after step four of a method for manufacturing a passivated contact solar cell with a selective emitter structure according to an embodiment of the invention.
Fig. 5 is a schematic cross-sectional view of a cell structure after a fifth step of a method for manufacturing a passivated contact solar cell with a selective emitter structure according to an embodiment of the invention.
Fig. 6 is a schematic cross-sectional view of a cell structure after sixth step of a method for manufacturing a passivated contact solar cell with a selective emitter structure according to an embodiment of the invention.
Fig. 7 is a schematic cross-sectional view of a cell structure after a seventh step of a method for manufacturing a passivated contact solar cell with a selective emitter structure according to an embodiment of the invention.
Fig. 8 is a schematic cross-sectional view of a cell structure after step eight of a method for manufacturing a passivated contact solar cell with a selective emitter structure according to an embodiment of the invention.
Detailed Description
The present invention will be described in detail with reference to examples.
The present invention is not limited to the above-described embodiments, and those skilled in the art can make modifications to the embodiments without any inventive contribution as required after reading the present specification, but only protected within the scope of the appended claims.
The invention discloses a preparation method of a passivated contact solar cell, which adopts the technical scheme that: the method comprises the following steps:
(1) preparing suede surfaces on the back surface and the front surface of the N-type crystal silicon substrate;
(2) carrying out boron diffusion treatment on the texturing surface on the front surface of the N-type crystal silicon substrate to form a lightly doped region layer;
(3) carrying out local boron ion implantation on the lightly doped region layer of the N-type crystal silicon substrate by using a mask, and carrying out annealing treatment to form a local heavily doped region;
(4) preparing a tunneling oxide layer on the textured surface of the back surface of the N-type crystalline silicon substrate treated in the step (3), and preparing a phosphorus-doped polycrystalline silicon layer on the tunneling oxide layer;
(5) preparing a silicon nitride antireflection layer on the phosphorus-doped polycrystalline silicon layer on the back surface of the N-type crystal silicon substrate; preparing an aluminum oxide passivation layer on the lightly doped region layer on the front surface of the N-type crystal silicon substrate, and preparing a silicon nitride antireflection layer on the aluminum oxide passivation layer;
(6) performing screen printing metallization slurry treatment on the front surface and the back surface of the N-type crystal silicon substrate, and sintering; and the printing area of the metallization paste corresponds to the local heavily doped area on the front surface of the N-type crystalline silicon substrate.
It should be noted that the mask in this embodiment is a mask with a hollow pattern, and the shape of the hollow pattern is consistent with that of the local doping region.
In one embodiment, the N-type crystalline silicon substrate has a resistivity of 0.3 to 5 Ω · cm and a thickness of 80 to 200 μm.
In one embodiment, in step (2), BBr is employed3The gaseous source is a diffusion source for boron diffusion, the diffusion temperature is 900-1100 ℃, the diffusion time is 30-60min, after the diffusion is finished, the sheet resistance of the N-type crystalline silicon substrate is 80-200 omega/□, and the surface concentration is 5e18cm-3～2e19cm-3。
In step (3), BF is used3Or B2H6And as a doping source, local boron ion implantation is carried out.
In one embodiment, BF3Energy of 5-20keV, dose 2e15-8e15cm-2，B2H6Energy of 1keV to 6keV, dose of 8e15 to 1.5e16cm-2；
The annealing temperature is 900-1100 ℃, the annealing time is 20-80min, and after the annealing is finished, the sheet resistance of the heavily doped region is 40-80 omega/□.
In one embodiment, in step (4),
the thickness of the tunneling oxide layer is 0.5-3 nm, the manufacturing material is silicon dioxide, and the preparation method comprises thermal oxidation and HNO3Oxidation, O3Oxidation, or atomic layer deposition;
preparing a polycrystalline silicon layer on the tunneling oxide layer by adopting a low-pressure chemical deposition method, wherein the deposition temperature is 550-650 ℃, and after the deposition is finished, the thickness of the phosphorus-doped polycrystalline silicon layer is 50-400 nm;
and carrying out phosphorus doping on the polycrystalline silicon layer by adopting an ion implantation method, and carrying out annealing treatment to form a phosphorus-doped polycrystalline silicon layer.
In one embodiment, in step (4),
performing doping treatment on the polysilicon layer by using phosphine or red phosphorus as a doping source, wherein the doping amount is 2e15-8e15cm-2；
After the doping is finished, annealing treatment is carried out to form the phosphorus-doped polysilicon layer, wherein the annealing temperature is 750-900 ℃, the time is 20-80min, and the doping sheet resistance is 20-100 omega/□.
In one embodiment, in the step (5), the thickness of the silicon nitride antireflection layer is 50-150nm, and the silicon nitride antireflection layer is prepared by adopting a plasma enhanced chemical vapor deposition mode.
In one embodiment, in step (5), the thickness of the passivation layer of aluminum oxide is 1-10nm, which is prepared by ALD or PECVD.
In one embodiment, in the step (6), a back main gate and a back auxiliary gate are printed on the back of the N-type crystal silicon substrate by silver paste, and are dried, and in one embodiment, the back auxiliary gate is 40-100um in line width and is parallel to each other;
and printing a front main gate and a front auxiliary gate on the front surface of the N-type crystal silicon substrate by adopting aluminum-doped silver paste, and drying, wherein in one embodiment, the front auxiliary gate has the line width of 40-100 mu m and is parallel to each other.
According to the invention, a mature boron tribromide gaseous source is used for diffusion treatment on a texturing surface on the front surface of an N-type crystalline silicon substrate to form a uniform light-doped area on the whole texturing surface on the front surface of the N-type crystalline silicon substrate, and then a local heavy-doped area is prepared on the light-doped area in an ion implantation manner. The novel preparation method of the boron-doped selective emitter is simple and effective, can obviously reduce the composite current on the surface of the emitter, thereby improving the efficiency of the N-type passivated contact battery by more than 0.2 percent.
The inventive method for producing a passivated contact solar cell will be described in detail below with specific examples.
Example 1
(1) Taking an N-type crystalline silicon substrate 1 with the resistivity of 1 omega cm and the thickness of 160 mu m, and putting the N-type crystalline silicon substrate 1 with the resistivity of 1 omega cm and the thickness of 160 mu m in an alkaline solution to form textured surfaces on both the back surface and the front surface of the N-type crystalline silicon substrate 1. The cell structure after this step is shown in fig. 1.
(2) Firstly adopting BBr3Performing boron diffusion treatment by using a gaseous source as an ion source to form a lightly doped region layer 2, wherein the diffusion temperature is 900 ℃, the diffusion time is 40min, and after the diffusion is finished, the method of the N-type crystalline silicon substrateResistance of 120 omega/□ and surface concentration of 8e18cm-3(ii) a And then cleaned. The cell structure after this step is shown in fig. 2.
(3) Through a mask, borane is firstly adopted as a doping source for ion implantation on the lightly doped region layer 2 to carry out local heavy doping treatment, wherein the energy of the borane is 4keV, and the dosage is 2e15cm-2(ii) a Then annealing is carried out to form a local heavily doped region 3, wherein the annealing temperature is 900 ℃, the annealing time is 60min, and the sheet resistance of the heavily doped region 3 is 50 omega/□. The cell structure after this step is shown in fig. 3.
(4) Firstly preparing a silicon dioxide layer as a tunneling oxide layer 4 on the textured surface of the back surface of the N-type crystal silicon substrate in a thermal oxidation mode, wherein the thickness of the silicon dioxide layer is 1 nm; then preparing a polycrystalline silicon layer on the tunneling oxide layer by adopting a low-pressure chemical deposition mode, wherein the deposition temperature is 600 ℃, and the thickness of the polycrystalline silicon layer is 150 nm; finally, phosphine is used as a doping source, the polycrystalline silicon layer is doped in an ion implantation mode, and after annealing, the phosphorus-doped polycrystalline silicon layer 5 is formed, wherein the implantation dosage of the phosphine is 3e15cm-2The annealing temperature is 850 ℃, the annealing time is 80min, and the doping sheet resistance is 50 omega/□. The cell structure after this step is shown in fig. 4.
(5) And preparing a silicon nitride antireflection layer 6 on the phosphorus-doped polycrystalline silicon layer 5 on the back surface of the N-type crystalline silicon substrate by adopting a plasma enhanced chemical vapor deposition mode, wherein the thickness of the silicon nitride antireflection layer 6 is 80 nm. The cell structure after this step is shown in fig. 5.
(6) And preparing an aluminum oxide passivation layer 7 on the lightly doped region layer on the front surface of the N-type crystal silicon substrate in an ALD mode, wherein the thickness of the aluminum oxide passivation layer 7 is 2 nm. The cell structure after this step is shown in fig. 6.
(7) And preparing a silicon nitride antireflection layer 8 on the aluminum oxide passivation layer 7 on the front surface of the N-type crystalline silicon substrate by adopting a plasma enhanced chemical vapor deposition mode, wherein the thickness of the silicon nitride antireflection layer 8 is 80 nm. The cell structure after this step is shown in fig. 7.
(8) Printing a back main grid 9 and a back auxiliary grid on the back of the N-type crystal silicon substrate by silver paste, and drying, wherein the line width of the back auxiliary grid is 40 mu m and the back auxiliary grid are parallel to each other, and the sintering peak temperature is 700 ℃; and printing a front main grid 10 and a front auxiliary grid on the front surface of the N-type crystal silicon substrate by adopting aluminum-doped silver paste, and drying, wherein the line width of the front auxiliary grid is 40 mu m, and the sintering peak temperature of the front auxiliary grid is 700 ℃ in parallel. The cell structure after this step is shown in fig. 8.
Example 2
(1) An N-type crystalline silicon substrate 1 with the resistivity of 0.3 omega cm and the thickness of 80 mu m is taken, and the N-type crystalline silicon substrate 1 with the resistivity of 0.3 omega cm and the thickness of 160 mu m is placed in an alkaline solution to form textured surfaces on the back surface and the front surface of the N-type crystalline silicon substrate 1. The cell structure after this step is shown in fig. 1.
(2) Firstly adopting BBr3Performing boron diffusion treatment by using a gaseous source as an ion source to form a lightly doped region layer 2, wherein the diffusion temperature is 1000 ℃, the diffusion time is 30min, the sheet resistance of the N-type crystal silicon substrate is 150 omega/□ after the diffusion is finished, and the surface concentration is 5e18cm-3. The cell structure after this step is shown in fig. 2.
(3) Through a mask, boron fluoride is firstly adopted as a doping source for ion implantation on the lightly doped region layer 2 to carry out local heavy doping treatment, wherein the energy of the boron fluoride is 10keV, and the dosage is 2e15-6e15cm-2(ii) a Then annealing is carried out to form a local heavily doped region 3, wherein the annealing temperature is 1000 ℃, the annealing time is 20min, and the sheet resistance of the heavily doped region 3 is 50 omega/□. The cell structure after this step is shown in fig. 3.
(4) Firstly adopting HNO on the suede surface of the back surface of the N-type crystal silicon substrate3Preparing a silicon dioxide layer serving as a tunneling oxide layer 4 in an oxidation mode, wherein the thickness of the silicon dioxide layer is 0.5 nm; then preparing a polycrystalline silicon layer on the tunneling oxide layer by adopting a low-pressure chemical deposition mode, wherein the deposition temperature is 550 ℃, and the thickness of the polycrystalline silicon layer is 50 nm; finally, red phosphorus is used as a doping source, the polycrystalline silicon layer is doped in an ion implantation mode, and after annealing, the phosphorus-doped polycrystalline silicon layer 5 is formed, wherein the implantation dosage of the red phosphorus is 2e15cm-2The annealing temperature is 750 ℃, the time is 20min, and the doping sheet resistance is 20 omega/□. Electricity for accomplishing the stepThe cell structure is shown in FIG. 4.
(5) And preparing a silicon nitride antireflection layer 6 on the phosphorus-doped polycrystalline silicon layer 5 on the back surface of the N-type crystalline silicon substrate by adopting a plasma enhanced chemical vapor deposition mode, wherein the thickness of the silicon nitride antireflection layer 6 is 50 nm. The cell structure after this step is shown in fig. 5.
(6) And preparing an aluminum oxide passivation layer 7 on the lightly doped region layer on the front surface of the N-type crystal silicon substrate in a PECVD (plasma enhanced chemical vapor deposition) mode, wherein the thickness of the aluminum oxide passivation layer 7 is 1 nm. The cell structure after this step is shown in fig. 6.
(7) And preparing a silicon nitride antireflection layer 8 on the aluminum oxide passivation layer 7 on the front surface of the N-type crystalline silicon substrate by adopting a plasma enhanced chemical vapor deposition mode, wherein the thickness of the silicon nitride antireflection layer 8 is 50 nm. The cell structure after this step is shown in fig. 7.
(8) Printing a back main grid 9 and a back auxiliary grid on the back of the N-type crystal silicon substrate by silver paste, and drying, wherein the line width of the back auxiliary grid is 80 mu m, the back auxiliary grid is parallel to the back main grid, and the sintering peak temperature is 700 ℃; and printing a front main grid 10 and a front auxiliary grid on the front surface of the N-type crystal silicon substrate by adopting aluminum-doped silver paste, and drying, wherein the line width of the front auxiliary grid is 80 mu m, and the sintering peak temperature of the front auxiliary grid is 700 ℃ in parallel. The cell structure after this step is shown in fig. 8.
Example 3
(1) Taking an N-type crystalline silicon substrate 1 with the resistivity of 5 omega cm and the thickness of 200 mu m, and putting the N-type crystalline silicon substrate 1 with the resistivity of 1 omega cm and the thickness of 200 mu m in an alkaline solution to form textured surfaces on both the back surface and the front surface of the N-type crystalline silicon substrate 1. The cell structure after this step is shown in fig. 1.
(2) Firstly adopting BBr3Performing boron diffusion treatment by using a gaseous source as an ion source to form a lightly doped region layer 2, wherein the diffusion temperature is 1100 ℃, the diffusion time is 60min, the sheet resistance of the N-type crystal silicon substrate is 200 omega/□ after the diffusion is finished, and the surface concentration is 2e19cm-3(ii) a And then proceed. The cell structure after this step is shown in fig. 2.
(3) By specially designed mask, BF is first applied on the lightly doped region layer 23As a doping source for ion implantation, performing local heavy doping treatment, wherein BF3At an energy of 4keV and at a dose of 8e15cm-2(ii) a Then annealing is carried out to form a local heavily doped region 3, wherein the annealing temperature is 1100 ℃, the annealing time is 80min, and the sheet resistance of the heavily doped region 3 is 80 omega/□. The cell structure after this step is shown in fig. 3.
(4) Firstly adopting O on the textured surface of the back surface of the N-type crystal silicon substrate3Preparing a silicon dioxide layer serving as a tunneling oxide layer 4 in an oxidation mode, wherein the thickness of the silicon dioxide layer is 3 nm; then preparing a polycrystalline silicon layer on the tunneling oxide layer by adopting a low-pressure chemical deposition mode, wherein the deposition temperature is 650 ℃, and the thickness of the polycrystalline silicon layer is 400 nm; finally, red phosphorus is used as a doping source, the polycrystalline silicon layer is doped in an ion implantation mode, and after annealing, the phosphorus-doped polycrystalline silicon layer 5 is formed, wherein the implantation dosage of the red phosphorus is 8e15cm-2The annealing temperature is 900 ℃, the time is 80min, and the doping sheet resistance is 100 omega/□. The cell structure after this step is shown in fig. 4.
(5) And preparing a silicon nitride antireflection layer 6 on the phosphorus-doped polycrystalline silicon layer 5 on the back surface of the N-type crystalline silicon substrate by adopting a plasma enhanced chemical vapor deposition mode, wherein the thickness of the silicon nitride antireflection layer 6 is 150 nm. The cell structure after this step is shown in fig. 5.
(6) And preparing an aluminum oxide passivation layer 7 on the lightly doped region layer on the front surface of the N-type crystal silicon substrate in an ALD mode, wherein the thickness of the aluminum oxide passivation layer 7 is 10 nm. The cell structure after this step is shown in fig. 6.
(7) And preparing a silicon nitride antireflection layer 8 on the aluminum oxide passivation layer 7 on the front surface of the N-type crystalline silicon substrate by adopting a plasma enhanced chemical vapor deposition mode, wherein the thickness of the silicon nitride antireflection layer 8 is 1500 nm. The cell structure after this step is shown in fig. 7.
(8) Printing a back main grid 9 and a back auxiliary grid on the back of the N-type crystal silicon substrate by silver paste, and drying, wherein the line width of the back auxiliary grid is 40 mu m and the back auxiliary grid are parallel to each other, and the sintering peak temperature is 700 ℃; and printing a front main grid 10 and a front auxiliary grid on the front surface of the N-type crystal silicon substrate by adopting aluminum-doped silver paste, and drying, wherein the line width of the front auxiliary grid is 40 mu m, and the sintering peak temperature of the front auxiliary grid is 700 ℃ in parallel. The cell structure after this step is shown in fig. 8.
The invention also discloses a passivated contact solar cell prepared by the method, as shown in figure 8, comprising an N-type crystalline silicon substrate 1,
the front surface of the N-type crystal silicon substrate sequentially comprises a light doping layer 2, a local heavy doping region 3, an aluminum oxide passivation layer 7, a silicon nitride antireflection layer 8 and a metal slurry layer from inside to outside;
the back surface of the N-type crystal silicon substrate sequentially comprises a tunneling oxide layer 4, a phosphorus-doped polycrystalline silicon layer 5, a silicon nitride antireflection layer 6 and a metal slurry layer from inside to outside.
As shown in table 1 below, the open circuit voltage, short circuit current density, and solar conversion efficiency of the solar cell of the present invention are superior to those of the reference group.
TABLE 1
| Open circuit voltage mV | Short circuit current density mA/cm2 | Fill factor | Conversion efficiency | |
| Reference group | 699 | 40.52 | 81.21 | 23.01 |
| The invention | 703 | 40.64 | 81.33 | 23.24 |
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the protection scope of the present invention, although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (9)
1. A method for preparing a passivated contact solar cell with a selective emitter structure is characterized in that: the method comprises the following steps:
(1) preparing suede surfaces on the back surface and the front surface of the N-type crystal silicon substrate;
(2) carrying out boron diffusion treatment on the texturing surface on the front surface of the N-type crystal silicon substrate to form a lightly doped region layer;
(3) carrying out local boron ion implantation on the lightly doped region layer of the N-type crystal silicon substrate by using a mask, and carrying out annealing treatment to form a local heavily doped region;
(4) preparing a tunneling oxide layer on the textured surface of the back surface of the N-type crystalline silicon substrate treated in the step (3), and preparing a phosphorus-doped polycrystalline silicon layer on the tunneling oxide layer;
(5) preparing a silicon nitride antireflection layer on the phosphorus-doped polycrystalline silicon layer on the back surface of the N-type crystal silicon substrate; preparing an aluminum oxide passivation layer on the lightly doped region layer on the front surface of the N-type crystal silicon substrate, and preparing a silicon nitride antireflection layer on the aluminum oxide passivation layer;
(6) performing screen printing metallization slurry treatment on the front surface and the back surface of the N-type crystal silicon substrate, and sintering; and the printing area of the metallization paste corresponds to the local heavily doped area on the front surface of the N-type crystalline silicon substrate.
2. The production method according to claim 1, wherein in the step (1), the N-type crystalline silicon substrate has a resistivity of 0.3 to 5 Ω -cm and a thickness of 80 to 200 μm.
3. The process according to claim 1, wherein in step (2), BBr is used3The gaseous source is a diffusion source for boron diffusion, the diffusion temperature is 900-1100 ℃, the diffusion time is 30-60min, after the diffusion is finished, the sheet resistance of the N-type crystalline silicon substrate is 80-200 omega/□, and the surface concentration is 5e18cm-3～2e19cm-3。
4. The production process according to any one of claims 1 to 3, wherein in step (3), BF is used3Or B2H6As a doping source, local boron ion implantation is carried out, and annealing treatment is carried out to form a local heavily doped region, wherein,
BF3energy of 5-20keV, dose 2e15-8e15cm-2，B2H6Energy of 1keV to 6keV, dose of 8e15 to 1.5e16cm-2。
5. The production method according to claim 4,
the annealing temperature is 900-1100 ℃, the annealing time is 20-80min, and after the annealing is finished, the sheet resistance of the heavily doped region is 40-80 omega/□.
6. The production method according to any one of claims 1 to 3 and 5, wherein, in the step (4),
the thickness of the tunneling oxide layer is 0.5-3 nm, the manufacturing material is silicon dioxide, and the preparation method comprises thermal oxidation and HNO3Oxidation, O3Oxidation, or atomic layer deposition;
preparing a polycrystalline silicon layer on the tunneling oxide layer by adopting a low-pressure chemical deposition method, wherein the deposition temperature is 550-650 ℃, and after the deposition is finished, the thickness of the phosphorus-doped polycrystalline silicon layer is 50-400 nm;
and carrying out phosphorus doping on the polycrystalline silicon layer by adopting an ion implantation method, and carrying out annealing treatment to form a phosphorus-doped polycrystalline silicon layer.
7. The production method according to claim 6, wherein, in the step (4),
performing doping treatment on the polysilicon layer by using phosphine or red phosphorus as a doping source, wherein the doping amount is 2e15-8e15cm-2；
After the doping is finished, annealing treatment is carried out to form the phosphorus-doped polysilicon layer, wherein the annealing temperature is 750-900 ℃, the time is 20-80min, and the doping sheet resistance is 20-100 omega/□.
8. The method according to claim 1, wherein in the step (5), the silicon nitride anti-reflective layer has a thickness of 50-150nm and is prepared by a vapor deposition method using plasma enhanced chemical method.
9. A passivated contact solar cell comprising an N-type crystalline silicon substrate characterized by:
the front surface of the N-type crystal silicon substrate sequentially comprises a light doping layer, a local heavily doped region, an aluminum oxide passivation layer, a silicon nitride antireflection layer and a metal slurry layer from inside to outside;
the back surface of the N-type crystal silicon substrate sequentially comprises a tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer, a silicon nitride antireflection layer and a metal slurry layer from inside to outside.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1074847A (en) * | 1996-08-29 | 1998-03-17 | Nec Corp | Manufacture of semiconductor memory |
| US20030022052A1 (en) * | 2001-07-27 | 2003-01-30 | Kearl Daniel A. | Bipolar plates and end plates for fuel cells and methods for making the same |
| CN104269457A (en) * | 2014-09-05 | 2015-01-07 | 奥特斯维能源（太仓）有限公司 | n-type IBC silicon solar cell manufacturing method based on ion implantation technology |
| CN105489712A (en) * | 2016-02-01 | 2016-04-13 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing method of N-type back-junction solar cell |
| CN108987532A (en) * | 2018-07-23 | 2018-12-11 | 江苏顺风光电科技有限公司 | A kind of preparation method of the N-type tunnel oxide passivating solar battery based on light scattering structure |
| US20190109257A1 (en) * | 2015-10-25 | 2019-04-11 | Solaround Ltd. | Method of bifacial cell fabrication |
| CN109671807A (en) * | 2018-12-26 | 2019-04-23 | 浙江晶科能源有限公司 | A kind of preparation method of solar battery |
| CN109742172A (en) * | 2019-01-08 | 2019-05-10 | 华东理工大学 | The method of spin coating boron source laser doping production N-type selective emitter double-side cell |
| CN110197855A (en) * | 2019-05-29 | 2019-09-03 | 西安理工大学 | For Topcon battery production poly-Si around plating minimizing technology |
-
2020
- 2020-02-26 CN CN202010121327.XA patent/CN111162145A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1074847A (en) * | 1996-08-29 | 1998-03-17 | Nec Corp | Manufacture of semiconductor memory |
| US20030022052A1 (en) * | 2001-07-27 | 2003-01-30 | Kearl Daniel A. | Bipolar plates and end plates for fuel cells and methods for making the same |
| CN104269457A (en) * | 2014-09-05 | 2015-01-07 | 奥特斯维能源（太仓）有限公司 | n-type IBC silicon solar cell manufacturing method based on ion implantation technology |
| US20190109257A1 (en) * | 2015-10-25 | 2019-04-11 | Solaround Ltd. | Method of bifacial cell fabrication |
| CN105489712A (en) * | 2016-02-01 | 2016-04-13 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing method of N-type back-junction solar cell |
| CN108987532A (en) * | 2018-07-23 | 2018-12-11 | 江苏顺风光电科技有限公司 | A kind of preparation method of the N-type tunnel oxide passivating solar battery based on light scattering structure |
| CN109671807A (en) * | 2018-12-26 | 2019-04-23 | 浙江晶科能源有限公司 | A kind of preparation method of solar battery |
| CN109742172A (en) * | 2019-01-08 | 2019-05-10 | 华东理工大学 | The method of spin coating boron source laser doping production N-type selective emitter double-side cell |
| CN110197855A (en) * | 2019-05-29 | 2019-09-03 | 西安理工大学 | For Topcon battery production poly-Si around plating minimizing technology |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN112071951A (en) * | 2020-08-31 | 2020-12-11 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of solar cell and solar cell |
| CN112103364A (en) * | 2020-10-13 | 2020-12-18 | 中国科学院宁波材料技术与工程研究所 | Selective emitter structure, preparation method and application thereof |
| CN112490304A (en) * | 2020-12-04 | 2021-03-12 | 东方日升（常州）新能源有限公司 | Preparation method of high-efficiency solar cell |
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| CN115799364A (en) * | 2023-02-07 | 2023-03-14 | 天合光能股份有限公司 | Solar cell |
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