CN107195699B - Passivated contact solar cell and preparation method - Google Patents
Passivated contact solar cell and preparation method Download PDFInfo
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- CN107195699B CN107195699B CN201710564575.XA CN201710564575A CN107195699B CN 107195699 B CN107195699 B CN 107195699B CN 201710564575 A CN201710564575 A CN 201710564575A CN 107195699 B CN107195699 B CN 107195699B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 56
- 239000013078 crystal Substances 0.000 claims abstract description 50
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 44
- 238000002161 passivation Methods 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 230000005641 tunneling Effects 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 35
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
- -1 phosphorus ions Chemical class 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 239000005388 borosilicate glass Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 125000004437 phosphorous atom Chemical group 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000007613 environmental effect Effects 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims 1
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 description 6
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
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- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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Abstract
The invention relates to a passivated contact back junction solar cell and a preparation method thereof, wherein the passivated contact back junction solar cell comprises an N-type crystal silicon substrate, wherein a tunneling oxide layer, an intrinsic polycrystalline silicon layer, a locally doped N + polycrystalline silicon region, a passivated antireflection film and an N + metal electrode are sequentially arranged on the front surface of the N-type crystal silicon substrate from inside to outside, and the N + metal electrode is arranged on the locally doped N + polycrystalline silicon region; the back surface of the N-type crystal silicon substrate is sequentially provided with a p + doping area, a passivation film and a p + metal electrode from inside to outside, and the p + metal electrode is arranged on the p + doping area. The beneficial effects are as follows: the front surface of the N-type crystal silicon substrate adopts a local N + doped polycrystalline silicon passivation layer, and compared with a back junction battery covered by the whole N + polycrystalline silicon layer, the back junction battery can reduce the ineffective absorption of the polycrystalline silicon layer to incident light, improve the short-circuit current of the battery, realize the passivation contact of the front surface, greatly reduce the recombination rate of the front surface of the battery and improve the open-circuit voltage and the short-circuit current.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a passivated contact solar cell and a preparation method thereof.
Background
Surface passivation of crystalline silicon solar cells has been a major concern in design and optimization. The PERC/PERL design is from the early passivation of only the back electric field, to the passivation of the front silicon nitride, and then to the back introducing the passivation local open contact of the dielectric layer such as silicon oxide, aluminum oxide, silicon nitride, etc. While this structure temporarily alleviates the problem of backside passivation, it does not eliminate the problem of backside passivation, and the high recombination rate at the openings still remains and further complicates the process. Although the PERC and PERL cells have a relatively perfect surface passivation structure, the contact range of the back surface is limited to the opening region, which not only increases the process complexity, but also causes different processes to damage the surrounding silicon material to different degrees, which additionally increases the recombination of the metal contact region. Because the open pore limits the transmission path of the current carrier, the current carrier deviates from the shortest path vertical to the contact surface and is blocked at the opening, and the loss of the filling factor is increased. In recent years, a technology capable of realizing passivation of the whole surface without opening a hole becomes a hot spot of mechanism research, and is a passivation Contact (Passivated Contact) technology.
An N-type back junction cell is characterized in that an N + doped region is formed on the front surface of an N-type substrate silicon wafer, a p + emitter is formed on the back surface of the N-type substrate silicon wafer, and an N +/N junction (front surface field) exists on a light receiving surface (front surface) of a front contact cell. However, its doping concentration and junction depth do not form a good ohmic contact, resulting in an increased series resistance affecting the final fill factor and conversion efficiency. How to make the front surface field effectively inhibit the recombination of the photon-generated carriers on the front surface and make more photon-generated carriers reach the emitter on the back surface is a great challenge for improving the conversion efficiency of the back junction battery at present.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a back junction solar cell with a local passivated contact and a preparation method thereof.
The invention provides a back junction solar cell with local passivation contact, which adopts the technical scheme that:
a passivated contact solar cell comprising an N-type crystalline silicon substrate characterized by: the front surface of the N-type crystal silicon substrate is sequentially provided with a tunneling oxide layer, an intrinsic polycrystalline silicon layer, a locally doped N + polycrystalline silicon region, a passivation anti-reflection film and an N + metal electrode from inside to outside, and the N + metal electrode is arranged on the locally doped N + polycrystalline silicon region; the back surface of the N-type crystal silicon substrate is sequentially provided with a p + doping area, a passivation film and a p + metal electrode from inside to outside, and the p + metal electrode is arranged on the p + doping area.
The invention also provides a preparation method of the passivated contact solar cell, which comprises the following steps:
(1) Respectively carrying out doping treatment on the front surface and the back surface of the N-type crystal silicon substrate, wherein the doping treatment mode of the front surface of the N-type crystal silicon substrate is as follows: growing a tunneling oxide layer on the front surface of the N-type crystal silicon substrate, growing an intrinsic polycrystalline silicon layer or an intrinsic amorphous silicon layer on the tunneling oxide layer, and selectively and locally injecting phosphorus ions on the intrinsic polycrystalline silicon layer or the intrinsic amorphous silicon layer; the doping treatment mode of the back surface of the N-type crystal silicon substrate is as follows: depositing borosilicate glass by an APCVD (advanced plasma chemical vapor deposition) mode, or injecting boron ions by an ion injection mode;
(2) Selectively cleaning the N-type crystal silicon substrate by using a weak alkaline solution, removing the intrinsic polycrystalline silicon layer or the intrinsic amorphous silicon layer in the non-injection region, and then annealing; after the annealing is finished, forming a locally doped n + polycrystalline silicon layer on the front surface of the silicon wafer, and forming a p + doped emitter on the back surface of the silicon wafer;
(3) Forming a passivation antireflection film on the front surface of the N-type crystal silicon substrate, and forming a passivation film on the back surface of the N-type crystal silicon substrate;
(4) And forming an N + metal electrode in ohmic contact with the N + doping region on the front surface of the N-type crystal silicon substrate, and forming a p + metal electrode in ohmic contact with the p + doping region on the back surface of the N-type crystal silicon substrate to finish the manufacture of the solar cell.
Wherein, in the step (1), the tunneling oxide layer on the front surface is SiO 2 1-3nm in thickness, siO 2 The growth method of (2) is a high-temperature thermal oxidation method, a nitric acid oxidation method, an ozone oxidation method or a CVD deposition method.
In the step (1), the method for growing the intrinsic polycrystalline silicon layer or the intrinsic amorphous silicon layer on the tunneling oxide layer on the front surface comprises the following steps: and putting the N-type crystal silicon substrate into LPCVD equipment, and growing an intrinsic polycrystalline silicon layer or an intrinsic amorphous silicon layer on the front surface tunneling oxide layer.
Wherein, in the step (1), an ion implantation mask is adopted on the intrinsic polycrystalline silicon layer or the intrinsic amorphous silicon layerSelectively implanting phosphorus atoms at a dose of 1 × 10 15 cm -2 ～8×10 15 cm -2 。
In the step (1), when phosphorus ions are implanted into the intrinsic polycrystalline silicon layer or the intrinsic amorphous silicon layer, a mask is arranged between the front surface of the N-type crystal silicon substrate and the ion beam, and a line-shaped opening is arranged on the mask, wherein the width of the line-shaped opening is 200-2000 um.
Wherein in the step (2), the alkalescent solution is KOH aqueous solution with the concentration of 1 percent, the peak temperature of annealing treatment is 800-1100 ℃, the annealing time is 30-200 min, and the environmental gas source is N 2 And O 2 。
In the step (3), the passivation anti-reflection film is prepared by depositing a layer of SiN with the thickness of 60-80nm on the front surface of the N-type crystal silicon substrate by using PECVD equipment x A dielectric film; the preparation method of the passivation film comprises the steps of firstly depositing a layer of Al with the thickness of 2-10nm on the back surface of an N-type crystal silicon substrate by utilizing ALD equipment 2 O 3 Dielectric film, then on Al 2 O 3 Depositing a layer of SiN with the thickness of 40-80 nm on the dielectric film x And (3) a dielectric film.
In the step (4), the metal electrode is prepared by printing silver paste on the N + doped region on the front surface of the N-type crystalline silicon substrate by a screen printing method, printing silver aluminum paste on the p + doped region on the back surface, and then performing sintering treatment.
Wherein, before the step (1), the front surface and the back surface of the N-type crystal silicon substrate are subjected to texturing treatment; the resistivity of the N-type crystal silicon substrate is 0.5-15 omega cm; the thickness of the N-type crystal silicon substrate is 50-300 mu m.
The implementation of the invention comprises the following technical effects:
according to the passivated contact solar cell provided by the invention, the front surface of the N-type crystal silicon substrate adopts the local N + doped polycrystalline silicon passivation layer, and compared with a back junction cell covered by the whole N + polycrystalline silicon layer, the ineffective absorption of the polycrystalline silicon layer on incident light can be reduced, so that the short-circuit current of the cell is improved, the passivated contact of the front surface can be realized, and the passivated contact of the front surface is greatly reducedThe recombination rate of the front surface of the battery promotes open-circuit voltage and short-circuit current. The back junction solar cell prepared by adopting the doping treatment mode has the hidden open circuit voltage (amplified Voc) of more than 700mV after the passivation film covering of the front and back surfaces is finished, and the dark saturation current density J 0 <20fA cm -2 After the printed electrode is made into a back junction contact battery, the internal quantum efficiency of the short wave band reaches more than 98 percent.
Drawings
Fig. 1 is a schematic cross-sectional view of a cell structure after a first step of a method for manufacturing a passivated contact solar cell in an embodiment of the invention.
Fig. 2 is a schematic cross-sectional view of a cell structure after a second step of a method for manufacturing a passivated contact solar cell in an embodiment of the invention.
Fig. 3 is a schematic cross-sectional view of the cell structure after the third step of the method for manufacturing a passivated contact solar cell according to the embodiment of the invention.
Fig. 4 is a schematic cross-sectional view of the cell structure after step four of the method for manufacturing a passivated contact solar cell in the embodiment of the invention.
Fig. 5 is a schematic cross-sectional view of the cell structure after the fifth step of the method for manufacturing a passivated contact solar cell in the embodiment of the invention.
Fig. 6 is a schematic cross-sectional view of the cell structure after step six of the method for manufacturing a passivated contact solar cell in an embodiment of the invention.
Fig. 7 is a schematic cross-sectional view of the cell structure after step seven of the method for manufacturing a passivated contact solar cell according to the embodiment of the invention.
Fig. 8 is a schematic cross-sectional view of the cell structure after step eight of the method for manufacturing a passivated contact solar cell according to the embodiment of the invention.
Detailed Description
The present invention will be described in detail below with reference to embodiments and drawings, it being noted that the described embodiments are only intended to facilitate the understanding of the present invention, and do not limit it in any way.
Referring to fig. 1 to 8, a method for manufacturing a passivated contact solar cell according to the present embodiment includes the following steps:
(1) Selecting an N-type crystalline silicon substrate 10, and performing texturing treatment on the front surface and the back surface of the N-type crystalline silicon substrate 10; the resistivity of the N-type crystalline silicon substrate 10 is 0.5 to 15. Omega. Cm, preferably 1 to 5. Omega. Cm; the thickness of the N-type crystalline silicon matrix 10 is 50-300 μm, preferably 120-200 μm; the cell structure after this step is completed is shown in fig. 1.
(2) And (2) placing the N-type crystalline silicon substrate 10 processed in the step (1) into an APCVD (atmospheric pressure chemical vapor deposition) machine, using borane as a gas, and forming a layer of borosilicate glass (BSG) 24 on the back surface, as shown in fig. 2.
(3) Growing a tunneling oxide layer 15 on the front surface of the N-type crystalline silicon substrate 10 processed in the step (2), wherein the tunneling oxide layer 15 is SiO in the embodiment 2 And (3) a layer. The tunnel oxide layer 15 is grown by a nitric acid oxidation method, a high temperature thermal oxidation method, a dry ozone oxidation method, and a wet ozone oxidation method. In the embodiment, a wet ozone oxidation method is adopted, the N-type crystal silicon substrate 10 is placed into deionized water, then ozone is introduced into the deionized water, so that the concentration of the ozone reaches 20-50ppm, the reaction temperature is 30-50 ℃, the time is 5-20min, and the thickness of the grown tunneling oxide layer 15 is 1-3nm. The structure of the cell after this step is completed is shown in fig. 3.
(4) And (4) putting the N-type crystalline silicon substrate 10 treated in the step (3) into LPCVD equipment (low pressure chemical vapor deposition), and growing an intrinsic polycrystalline silicon layer 26 on the front surface of the substrate, wherein the thickness of the intrinsic polycrystalline silicon layer is more than 100nm. The cell structure after this step is completed is shown in fig. 4.
(5) And (3) putting the N-type crystalline silicon substrate 10 processed in the step (4) into ion implantation equipment, arranging a mask clamp between the front surface of the silicon wafer and an ion source, and arranging a linear opening on the mask, wherein the width of the opening is 200-2000 um. Phosphorus atoms are selectively implanted into the intrinsic polysilicon layer 26 to form an implanted region 28 with an implant dose of 1 × 10 15 cm -2 ～8×10 15 cm -2 Preferably 1X 10 15 cm -2 ～3×10cm -2 . The structure of the cell after this step is completed is shown in fig. 5.
(6) Putting the N-type crystalline silicon substrate 10 treated in the step (5) into a cleaning tankWashing equipment, selectively washing by using a KOH aqueous solution with the concentration of 1%, removing the intrinsic polycrystalline silicon and the amorphous silicon layer in the region which is not injected, and finally drying; then, the N-type crystal silicon substrate 10 is placed in an annealing furnace to be annealed at a high temperature. The peak temperature of the annealing treatment is 800-1100 ℃, the annealing time is 30-200 min, and the environmental gas source is N 2 And O 2 . After the annealing process, the intrinsic polysilicon layer undoped region 26 is converted into the intrinsic polysilicon layer 12, and the implanted region 28 is converted into the n + doped polysilicon region 13. The structure of the cell after this step is completed is shown in fig. 6.
(7) And (5) growing a passivation antireflection film 14 on the front surface of the N-type crystalline silicon substrate 10 treated in the step (6), and growing a passivation film 18 on the back surface of the N-type crystalline silicon substrate 10. The passivation antireflective film 14 of the front surface is SiN x A film having a thickness of 60 to 80nm, the passivation film 18 of the back surface being SiO 2 、SiN x Or Al 2 O 3 One or more dielectric films are formed by depositing a layer of Al with the thickness of 2-10nm by using ALD equipment 2 O 3 Dielectric film, then on Al 2 O 3 Depositing a layer of SiN with the thickness of 40-80 nm on the dielectric film x And (3) a dielectric film. The cell structure after this step is completed is shown in fig. 7.
(8) And printing a p + metal electrode 22 on the back surface of the N-type crystalline silicon matrix 10 by using silver paste, and drying, and printing an N + metal electrode 20 on the front surface of the N-type crystalline silicon matrix 10 by using aluminum-doped silver paste, and drying. The silver paste and the aluminum-doped silver paste are of the types commonly used in the existing N-type battery technology. The cell structure after this step is completed is shown in fig. 8.
(9) And (3) conveying the N-type crystalline silicon substrate 10 treated in the step (8) into a belt type sintering furnace for sintering, wherein the sintering peak temperature is 850-950 ℃, and thus, the preparation of the passivated contact solar cell is completed.
Preferably, the front surface of the N-type crystal silicon substrate is an N-type crystal silicon surface; or the front surface of the N-type crystal silicon substrate is an intrinsic polycrystalline silicon layer or an intrinsic amorphous silicon layer grown on the tunneling oxide layer on the front surface of the N-type crystal silicon; when the front surface of the N-type crystal silicon substrate grows on the tunneling oxide layer on the front surface of the N-type crystal siliconWhen the intrinsic polycrystalline silicon layer or the intrinsic amorphous silicon layer is used, the N-type front surface tunneling oxide layer is SiO 2 With a thickness of 1-3nm, siO 2 The growth method of (2) is a high-temperature thermal oxidation method, a nitric acid oxidation method, an ozone oxidation method or a CVD deposition method.
Referring to fig. 8, the back contact solar cell of the present embodiment includes an N-type crystalline silicon substrate 10, a tunneling oxide layer 15, an intrinsic polysilicon layer 12, a front surface N + doped polysilicon region 13, a passivation anti-reflection film 14, and an N + metal electrode 20 sequentially formed on a front surface of the N-type crystalline silicon substrate 10 from inside to outside; the back surface of the N-type crystal silicon substrate 10 is sequentially provided with a back surface p + doping area 16, a passivation film 18 and a p + metal electrode 22 from inside to outside, the doping area comprises a front surface N + doping polycrystalline silicon area 13 and a back surface p + doping area 16, the front surface N + doping polycrystalline silicon area 13 is provided with an N + metal electrode 20, and the back surface p + doping area 16 is provided with a p + metal electrode 22.
Preferably, the p + metal electrode 22 is a silver aluminum back electrode and the n + metal electrode 2020 is a silver alloy front electrode. The passivation film 18 is SiO 2 、SiN x Or Al 2 O 3 One or more dielectric films, the passivation antireflection film 14 on the front surface is a SiNx film with a thickness of 60-80nm, and the passivation film 18 is SiO 2 SiNx or Al 2 O 3 One or more of the dielectric films, al thereof 2 O 3 The dielectric film is 2-10nm, siN x The thickness of the dielectric film is 60-80nm. The p + metal electrode 22 comprises a back main grid and a back auxiliary grid (not shown in the figure), the back main grid and the back auxiliary grid form an H-shaped grid line, wherein the width of the back main grid is 0.5-3mm, 3-6 grids are arranged at equal intervals, and the width of the back auxiliary grid is 20-60 microns. The n + metal electrode 20 comprises a front main grid and a front auxiliary grid (not shown in the figure), the front main grid and the front auxiliary grid form an H-shaped grid line, wherein the width of the front main grid is 0.5-3mm, 3-6 grids are arranged at equal intervals, and the width of the front auxiliary grid is 20-60 mu m.
After the passivation contact solar cell with the structure is coated with the passivation films on the front and rear surfaces, tests show that the hidden open circuit voltage (amplified Voc) of the passivated contact solar cell can reach more than 700mV, and the dark saturation current density J 0 <20fA cm -2 Internal quantum effect of short wave band after back contact battery made of printed electrodeThe rate reaches more than 95 percent.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the protection scope of the present invention, although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. A passivated contact solar cell comprising an N-type crystalline silicon substrate characterized by: the front surface of the N-type crystal silicon substrate is sequentially provided with a tunneling oxide layer, an intrinsic polycrystalline silicon layer, a locally doped N + polycrystalline silicon region, a passivation anti-reflection film and an N + metal electrode from inside to outside, and the N + metal electrode is arranged on the locally doped N + polycrystalline silicon region; the back surface of the N-type crystal silicon substrate is sequentially provided with a p + doping area, a passivation film and a p + metal electrode from inside to outside, and the p + metal electrode is arranged on the p + doping area;
the passive film is Al 2 O 3 Dielectric film and deposited on Al 2 O 3 SiNx dielectric film on the dielectric film, wherein the Al is 2 O 3 The thickness of the dielectric film is 2-10nm.
2. A method for preparing a passivated contact solar cell, comprising: comprises the following steps:
(1) Respectively carrying out doping treatment on the front surface and the back surface of the N-type crystal silicon substrate, wherein the doping treatment mode of the front surface of the N-type crystal silicon substrate is as follows: growing a tunneling oxide layer on the front surface of the N-type crystal silicon substrate, growing an intrinsic polycrystalline silicon layer or an intrinsic amorphous silicon layer on the tunneling oxide layer, and selectively and locally injecting phosphorus ions on the intrinsic polycrystalline silicon layer or the intrinsic amorphous silicon layer; the doping treatment mode of the back surface of the N-type crystal silicon substrate is as follows: depositing borosilicate glass by adopting an APCVD (advanced plasma chemical vapor deposition) mode, or injecting boron ions by adopting an ion injection mode;
(2) Selectively cleaning the N-type crystal silicon substrate by using a weak alkaline solution, removing the intrinsic polycrystalline silicon layer or the intrinsic amorphous silicon layer in the non-injection region, and then annealing; after the annealing is finished, forming a locally doped n + polycrystalline silicon layer on the front surface of the silicon wafer, and forming a p + doped emitter on the back surface of the silicon wafer;
(3) Forming a passivation antireflection film on the front surface of the N-type crystal silicon substrate, and forming a passivation film on the back surface of the N-type crystal silicon substrate;
(4) And forming an N + metal electrode in ohmic contact with the N + doping region on the front surface of the N-type crystal silicon substrate, and forming a p + metal electrode in ohmic contact with the p + doping region on the back surface of the N-type crystal silicon substrate to finish the manufacture of the solar cell.
3. A method of manufacturing a passivated contact solar cell according to claim 2, characterized in that: in the step (1), the tunneling oxide layer on the front surface is SiO 2 With a thickness of 1-3nm, siO 2 The growth method of (2) is a high-temperature thermal oxidation method, a nitric acid oxidation method, an ozone oxidation method or a CVD deposition method.
4. A method of manufacturing a passivated contact solar cell according to claim 2, characterized in that: in the step (1), the method for growing the intrinsic polycrystalline silicon layer or the intrinsic amorphous silicon layer on the tunneling oxide layer on the front surface comprises the following steps: and putting the N-type crystal silicon substrate into LPCVD equipment, and growing an intrinsic polycrystalline silicon layer or an intrinsic amorphous silicon layer on the tunneling oxide layer on the front surface.
5. A method of fabricating a passivated contact solar cell according to claim 2, wherein: in the step (1), phosphorus atoms are selectively implanted into the intrinsic polycrystalline silicon layer or the intrinsic amorphous silicon layer by using an ion implantation mask, and the implantation dose of the phosphorus atoms is 1 × 10 15 cm -2 ～8×10 15 cm -2 。
6. A method of manufacturing a passivated contact solar cell according to claim 2, characterized in that: in the step (1), when phosphorus ions are implanted into the intrinsic polycrystalline silicon layer or the intrinsic amorphous silicon layer, a mask is arranged between the front surface of the N-type crystal silicon substrate and the ion beam, and a linear opening is arranged on the mask, wherein the width of the linear opening is 200-2000 um.
7. A method of fabricating a passivated contact solar cell according to claim 2, wherein: in the step (2), the alkalescent solution is KOH aqueous solution with the concentration of 1 percent, the peak temperature of annealing treatment is 800-1100 ℃, the annealing time is 30-200 min, and the environmental gas source is N 2 And O 2 。
8. A method of manufacturing a passivated contact solar cell according to any of claims 2 to 6, characterized in that: in the step (3), the passivation anti-reflection film is prepared by depositing a layer of 60-80nm thick SiN on the front surface of the N-type crystal silicon substrate by PECVD equipment x A dielectric film; the preparation method of the passivation film comprises the steps of firstly depositing a layer of Al with the thickness of 2-10nm on the back surface of an N-type crystal silicon substrate by utilizing ALD equipment 2 O 3 Dielectric film, then on Al 2 O 3 A layer of SiN with the thickness of 40-80 nm is deposited on the dielectric film x And (3) a dielectric film.
9. A method of manufacturing a passivated contact solar cell according to any of claims 2 to 6, characterized in that: in the step (4), the metal electrode is prepared by printing silver paste on the N + doped region on the front surface of the N-type crystalline silicon substrate by a screen printing method, printing silver-aluminum paste on the p + doped region on the back surface, and then performing sintering treatment.
10. A method of manufacturing a passivated contact solar cell according to claim 2, characterized in that: before the step (1), performing texturing treatment on the front surface and the back surface of the N-type crystal silicon substrate; the resistivity of the N-type crystal silicon substrate is 0.5-15 omega cm; the thickness of the N-type crystal silicon substrate is 50-300 mu m.
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