CN111200038A - Preparation method of solar cell with TopCon structure - Google Patents
Preparation method of solar cell with TopCon structure Download PDFInfo
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- CN111200038A CN111200038A CN202010032131.3A CN202010032131A CN111200038A CN 111200038 A CN111200038 A CN 111200038A CN 202010032131 A CN202010032131 A CN 202010032131A CN 111200038 A CN111200038 A CN 111200038A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 83
- 239000010703 silicon Substances 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000001257 hydrogen Substances 0.000 claims abstract description 46
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 46
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 45
- 230000005641 tunneling Effects 0.000 claims abstract description 43
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 24
- 238000012545 processing Methods 0.000 claims abstract description 20
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- 239000011574 phosphorus Substances 0.000 claims abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052796 boron Inorganic materials 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 238000011068 loading method Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000010926 purge Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 125000004429 atom Chemical group 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The invention discloses a preparation method of a TopCon structure solar cell, which comprises the following steps: step 1, performing front boron diffusion on a textured silicon wafer to form a BSG layer; step 2, performing thermal oxidation after back etching on the silicon wafer to form a tunneling oxide layer; step 3, processing the tunneling oxide layer of the silicon wafer for a preset time at a preset temperature by hydrogen; step 4, depositing an amorphous silicon layer on the tunneling oxide layer; and 5, carrying out phosphorus doping on the amorphous silicon layer to form a PSG layer, so that the doped amorphous silicon layer and the tunneling oxide layer form a TopCon structure. By adopting the method for processing the silicon wafer with the grown tunneling oxide layer in the hydrogen atmosphere, the interface defect of the silicon wafer oxide layer is reduced, the passivation quality of the surface of the silicon wafer is improved, the silicon wafer does not need to be subjected to high-temperature annealing treatment, the damage effect of doped atoms on the oxide layer is avoided, and the quality of the solar cell is improved.
Description
Technical Field
The invention relates to the technical field of photovoltaic module preparation, in particular to a preparation method of a solar cell with a TopCon structure.
Background
Because photovoltaic module is as the important component in the new forms of energy trade, benefit from its nimble electricity generation mode, strong and brisk environmental adaptability, can set up everywhere such as desert, hubo, roof, do not also confine the area in power generation place to, can adapt to in a flexible way for photovoltaic module has obtained large-scale application, has also produced violent competition simultaneously.
The cell in the photovoltaic module is improved in generating efficiency through a process structure, and a TOPCON structure is one of the cell. The technique of Tunnel Oxide Passivated Contact (TOPCon) is a novel silicon solar cell technique proposed by Germany Frounhofu solar research. Firstly, preparing a layer of ultrathin (about 1.5 nm) silicon oxide on the back of the cell, then depositing a layer of doped amorphous silicon layer, and forming a passivation contact structure by the two layers of materials, wherein the two layers of materials provide good surface passivation for the back of a silicon wafer, the doped amorphous silicon layer has good conductivity for majority of photons, majority of photons can penetrate through the two layers of passivation layers, minority of photons are blocked, and the recombination rate of minority of photons is greatly reduced, so that the TOPCon structure cell has high open-circuit voltage and filling factor.
At present, TOPCON cells in the industry mostly adopt a thermal oxidation method to grow an oxide layer, such as a nitric acid oxidation method, an ozone water oxidation method, a thermal oxidation method and the like. The oxide layer prepared by the conventional method has poor interface quality, has a large amount of interface state defects, and needs to be reduced by long-time high-temperature annealing treatment (800-.
Disclosure of Invention
The invention provides a preparation method of a TopCon structure solar cell, which improves the defects of silicon wafer oxide layer interfaces, thereby improving passivation quality and cell performance.
In order to solve the above technical problems, the present invention provides a method for preparing a TopCon structured solar cell, comprising:
step 1, performing front boron diffusion on a textured silicon wafer to form a BSG layer;
step 2, performing thermal oxidation after back etching on the silicon wafer to form a tunneling oxide layer;
step 3, processing the tunneling oxide layer of the silicon wafer for a preset time at a preset temperature by hydrogen;
step 4, depositing an amorphous silicon layer on the tunneling oxide layer;
and 5, carrying out phosphorus doping on the amorphous silicon layer to form a PSG layer, so that the doped amorphous silicon layer and the tunneling oxide layer form a TopCon structure.
And performing hydrogen treatment on the tunneling oxide layer on the back surface of the silicon wafer at the temperature of 400-420 ℃ for 20-25 min.
Wherein the hydrogen treatment of the tunneling oxide layer on the back surface of the silicon wafer comprises:
putting the silicon wafer into hydrogen treatment equipment, and carrying out loading operation on the silicon wafer and the tunneling oxide layer;
heating the environment of the silicon wafer in the hydrogen processing equipment to 400-420 ℃;
vacuumizing the environment where the silicon wafer is located to a preset vacuum degree range;
introducing hydrogen into the environment where the silicon wafer is located to reach a preset pressure, and continuing for 20-25 min to perform hydrogen treatment on the tunneling oxide layer of the silicon wafer;
stopping introducing hydrogen, and introducing nitrogen into the environment where the silicon wafer is located for purging;
stopping heating the environment in which the silicon wafer is positioned in the hydrogen processing equipment so as to reduce the temperature of the silicon wafer;
and after the ambient temperature of the silicon wafer in the hydrogen processing equipment is lower than the threshold temperature, taking the silicon wafer out of the hydrogen processing equipment to realize the blanking operation.
Wherein, the oxidizing the silicon wafer after the back etching to form the tunneling oxide layer comprises:
and etching the back surface of the silicon wafer by adopting a nitric acid oxidation method, an ozone water oxidation method or a thermal oxidation method, and then oxidizing to form a tunneling oxide layer.
Wherein the thickness of the tunneling oxide layer is 1 nm-3 nm.
Wherein the thickness of the amorphous silicon layer is 60 nm-300 nm.
And depositing an amorphous silicon layer on the tunneling oxide layer by adopting LPCVD, PECVD or APCVD (plasma enhanced chemical vapor deposition) to prepare the tunneling oxide layer.
Wherein, after the step 5, the method further comprises the following steps:
step 6, removing the BSG layer and the PSG layer;
step 7, preparing a silicon nitride passivation layer on the surface of the silicon wafer;
and 8, screen printing and sintering the silicon wafer to form an electrode.
Compared with the prior art, the preparation method of the TopCon structure solar cell provided by the embodiment of the invention has the following advantages:
according to the preparation method of the TopCon structure solar cell, the silicon wafer with the grown tunneling oxide layer is processed in the hydrogen atmosphere, so that the interface defect of the silicon wafer oxide layer is reduced, the passivation quality of the surface of the silicon wafer is improved, the silicon wafer does not need to be subjected to high-temperature annealing treatment, the damage effect of doped atoms on the oxide layer is avoided, and the quality of the solar cell is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic flow chart illustrating steps of one embodiment of a method for manufacturing a TopCon-structured solar cell provided in the present application;
fig. 2 is a schematic flow chart of steps of another embodiment of a method for manufacturing a TopCon-structured solar cell provided in the present application.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1-2, fig. 1 is a schematic flow chart of steps of an embodiment of a method for manufacturing a TopCon-structured solar cell provided in the present application; fig. 2 is a schematic flow chart of steps of another embodiment of a method for manufacturing a TopCon-structured solar cell provided in the present application.
In a specific embodiment, the present invention provides a method for preparing a TopCon structured solar cell, comprising:
step 1, performing front boron diffusion on a textured silicon wafer to form a BSG layer;
step 2, performing thermal oxidation after back etching on the silicon wafer to form a tunneling oxide layer;
step 3, processing the tunneling oxide layer of the silicon wafer for a preset time at a preset temperature by hydrogen;
step 4, depositing an amorphous silicon layer on the tunneling oxide layer;
and 5, carrying out phosphorus doping on the amorphous silicon layer to form a PSG layer, so that the doped amorphous silicon layer and the tunneling oxide layer form a TopCon structure.
By adopting the method for processing the silicon wafer with the grown tunneling oxide layer in the hydrogen atmosphere, the interface defect of the silicon wafer oxide layer is reduced, the passivation quality of the surface of the silicon wafer is improved, the silicon wafer does not need to be subjected to high-temperature annealing treatment, the damage effect of doped atoms on the oxide layer is avoided, and the quality of the solar cell is improved.
In the present invention, conditions such as a specific hydrogen treatment temperature of the tunnel oxide layer are not limited, and generally, the hydrogen treatment of the tunnel oxide layer on the back surface of the silicon wafer is performed for 20min to 25min at a temperature of 400 ℃ to 420 ℃.
Specifically, the actual process of processing the silicon wafer is not limited, and in one embodiment, the hydrogen processing the tunnel oxide layer on the back surface of the silicon wafer includes:
putting the silicon wafer into hydrogen treatment equipment, and carrying out loading operation on the silicon wafer and the tunneling oxide layer;
heating the environment of the silicon wafer in the hydrogen processing equipment to 400-420 ℃;
vacuumizing the environment where the silicon wafer is located to a preset vacuum degree range;
introducing hydrogen into the environment where the silicon wafer is located to reach a preset pressure, and continuing for 20-25 min to perform hydrogen treatment on the tunneling oxide layer of the silicon wafer;
stopping introducing hydrogen, and introducing nitrogen into the environment where the silicon wafer is located for purging;
stopping heating the environment in which the silicon wafer is positioned in the hydrogen processing equipment so as to reduce the temperature of the silicon wafer;
and after the ambient temperature of the silicon wafer in the hydrogen processing equipment is lower than the threshold temperature, taking the silicon wafer out of the hydrogen processing equipment to realize the blanking operation.
The hydrogen treatment equipment is not limited in the invention, and the flow rate and the gas pressure of the hydrogen in the specific hydrogen treatment process are not limited.
The invention does not limit the thickness and the process mode of the tunneling oxide layer, and the step of oxidizing the silicon wafer after etching the back surface to form the tunneling oxide layer comprises the following steps:
and etching the back surface of the silicon wafer by adopting a nitric acid oxidation method, an ozone water oxidation method or a thermal oxidation method, and then oxidizing to form a tunneling oxide layer.
The present invention includes, but is not limited to, the above tunnel oxide layer formation method.
The invention summarizes the process of forming the oxide layer by oxidation and then adopts hydrogen gas to treat the interface of the oxide layer without adopting a long-time high-temperature annealing process, and the hydrogen gas treatment mode is similar to the hydrogen passivation treatment, so that the treatment temperature is far lower than the annealing temperature (800-1000 ℃) in the annealing process, the damage of doping atom diffusion to the tunneling oxide layer in the high-temperature annealing process can be avoided, and the passivation quality is improved.
The thickness of the tunnel oxide layer is not limited in the present invention, and is generally 1nm to 3 nm.
The specific thickness of the tunneling oxide layer, the thickness of the amorphous silicon layer and the doping mode are not limited, the deposition thickness and the deposition mode of the amorphous silicon layer are not limited, and the thickness of the amorphous silicon layer is generally 60nm to 300 nm.
The depositing of the amorphous silicon layer on the tunneling oxide layer may be performed by LPVCD, PECVD or APCVD, or may be performed by other methods, which are not limited in the present invention.
And for the doping of the amorphous silicon layer, ion implantation, phosphorus diffusion and the like can be adopted.
The hydrogen treatment method is only adopted, the treatment equipment only needs to be filled with hydrogen and vacuumized and heated, the hydrogen is a common gas, the vacuumization is largely used in a plurality of processes, and the heating is the inevitable choice of most processes, so that new equipment is not needed in the process, and the treatment cost is greatly reduced.
The process of the complete photovoltaic cell is not limited in the invention, and the method further comprises the following steps after the step 5:
step 6, removing the BSG layer and the PSG layer;
step 7, preparing a silicon nitride passivation layer on the surface of the silicon wafer;
and 8, screen printing and sintering the silicon wafer to form an electrode.
The invention does not limit the process for removing the BSG layer and the PSG layer, does not limit the thickness of the silicon nitride passivation layer, does not limit the electrode material adopted by the screen printing, and can be realized by adopting the existing process.
In summary, according to the preparation method of the TopCon structure solar cell provided by the embodiment of the invention, the silicon wafer on which the tunneling oxide layer grows is processed in the hydrogen atmosphere, so that the interface defects of the silicon wafer oxide layer are reduced, the passivation quality of the surface of the silicon wafer is improved, the silicon wafer does not need to be subjected to high-temperature annealing treatment, the damage effect of the doping atoms on the oxide layer is avoided, and the quality of the solar cell is improved.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A preparation method of a solar cell with a TopCon structure is characterized by comprising the following steps:
step 1, performing front boron diffusion on a textured silicon wafer to form a BSG layer;
step 2, carrying out back etching on the silicon wafer and then oxidizing to form a tunneling oxide layer;
step 3, processing the tunneling oxide layer of the silicon wafer for a preset time at a preset temperature by hydrogen;
step 4, depositing an amorphous silicon layer on the tunneling oxide layer;
and 5, carrying out phosphorus doping on the amorphous silicon layer to form a PSG layer, so that the doped amorphous silicon layer and the tunneling oxide layer form a TopCon structure.
2. The method for preparing a TopCon-structured solar cell according to claim 1, wherein the step of subjecting the tunneling oxide layer on the back surface of the silicon wafer to hydrogen treatment is performed at a temperature of 400-420 ℃ for 20-25 min.
3. The method for preparing a TopCon-structured solar cell according to claim 2, wherein the hydrogen treatment of the tunneling oxide layer on the back surface of the silicon wafer comprises:
putting the silicon wafer into hydrogen treatment equipment, and carrying out loading operation on the silicon wafer and the tunneling oxide layer;
heating the environment of the silicon wafer in the hydrogen processing equipment to 400-420 ℃;
vacuumizing the environment where the silicon wafer is located to a preset vacuum degree range;
introducing hydrogen into the environment where the silicon wafer is located to reach a preset pressure, and continuing for 20-25 min to perform hydrogen treatment on the tunneling oxide layer of the silicon wafer;
stopping introducing hydrogen, and introducing nitrogen into the environment where the silicon wafer is located for purging;
stopping heating the environment in which the silicon wafer is positioned in the hydrogen processing equipment so as to reduce the temperature of the silicon wafer;
and after the ambient temperature of the silicon wafer in the hydrogen processing equipment is lower than the threshold temperature, taking the silicon wafer out of the hydrogen processing equipment to realize the blanking operation.
4. The method of manufacturing a TopCon structured solar cell according to claim 1, wherein the step of performing back etching and then oxidizing the silicon wafer to form a tunnel oxide layer comprises:
and etching the back surface of the silicon wafer by adopting a nitric acid oxidation method, an ozone water oxidation method or a thermal oxidation method, and then oxidizing to form a tunneling oxide layer.
5. The method of claim 4, wherein the tunneling oxide layer has a thickness of 1nm to 3 nm.
6. The method of claim 5, wherein the thickness of the amorphous silicon layer is 60nm to 300 nm.
7. The method of claim 6, wherein depositing an amorphous silicon layer on the tunnel oxide layer is depositing an amorphous silicon layer on the tunnel oxide layer by LPVCD, PECVD or APCVD.
8. The method of manufacturing a TopCon structured solar cell according to claim 7, further comprising, after the step 5:
step 6, removing the BSG layer and the PSG layer;
step 7, preparing a silicon nitride passivation layer on the surface of the silicon wafer;
and 8, screen printing and sintering the silicon wafer to form an electrode.
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| WO2022105193A1 (en) * | 2020-11-19 | 2022-05-27 | 江苏大学 | Preparation method for silicon oxide and doped amorphous silicon film layer in topcon battery |
| WO2023221510A1 (en) * | 2022-05-19 | 2023-11-23 | 通威太阳能(眉山)有限公司 | Solar cell and preparation method therefor |
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| WO2023221510A1 (en) * | 2022-05-19 | 2023-11-23 | 通威太阳能(眉山)有限公司 | Solar cell and preparation method therefor |
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Application publication date: 20200526 |