WO2024066207A1 - New solar cell and fabrication method therefor - Google Patents

New solar cell and fabrication method therefor Download PDF

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Publication number
WO2024066207A1
WO2024066207A1 PCT/CN2023/080440 CN2023080440W WO2024066207A1 WO 2024066207 A1 WO2024066207 A1 WO 2024066207A1 CN 2023080440 W CN2023080440 W CN 2023080440W WO 2024066207 A1 WO2024066207 A1 WO 2024066207A1
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solar cell
layer
polysilicon layer
manufacturing
doped
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PCT/CN2023/080440
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French (fr)
Chinese (zh)
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付少剑
张明明
郁寅珑
白玉磐
蒋红洁
许明艳
鲁涛
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滁州捷泰新能源科技有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of solar cell manufacturing, and in particular to a novel solar cell and a manufacturing method thereof.
  • the topcon battery introduces polysilicon, it only forms an N+ layer through heavy phosphorus doping to form a good back contact layer.
  • the contact performance can be stably controlled, but the high doping level in the non-contact area will provide more recombination centers, which will have a major bottleneck in improving efficiency.
  • the purpose of the present invention is to provide a novel solar cell and a method for manufacturing the same, so as to solve the problem in the prior art that good back contact performance and low recombination center cannot be achieved at the same time.
  • the present invention provides a novel method for manufacturing a solar cell, comprising:
  • Boron doping is performed on the front side of the n-type base silicon to obtain a boron doped layer
  • a tunneling oxide layer and a polysilicon layer are sequentially arranged on the back side of the n-type silicon substrate;
  • An aluminum oxide layer and a front nitride passivation layer are sequentially arranged on the front side of the photovoltaic front end after acid washing and alkali washing, and a back nitride passivation layer is arranged on the back side to obtain a finished silicon wafer;
  • a front electrode and a back electrode are arranged on the surface of the finished silicon wafer to obtain a finished solar cell.
  • the step of removing reaction byproducts on the surface of the photovoltaic front end by acid washing and alkali washing comprises:
  • the mask layer is removed.
  • the step of covering the surface of the n++ polysilicon layer with a mask layer comprises:
  • the photovoltaic front end is subjected to acid washing and alkali washing to remove reaction by-products; after removing the reaction by-products, removing the mask layer comprises:
  • the photovoltaic front end is firstly acid-washed and then alkaline-washed to remove the reaction byproducts.
  • the front nitride passivation layer and the back nitride passivation layer are provided simultaneously.
  • the step of diffusing phosphorus on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer comprises:
  • the surface of the polysilicon layer is subjected to initial deposition, temperature-raising and post-deposition in sequence.
  • the deposition time of the initial deposition ranges from 300 seconds to 600 seconds
  • the deposition temperature ranges from 780 degrees Celsius to 800 degrees Celsius, including endpoint values.
  • the temperature range of the temperature increase is 880 degrees Celsius to 900 degrees Celsius, including endpoint values.
  • the deposition time of the post-deposition is The range of is 200 seconds to 400 seconds, and the range of deposition temperature is 780 degrees Celsius to 800 degrees Celsius, both inclusive.
  • a novel solar cell is a solar cell manufactured by any one of the above-mentioned methods for manufacturing the novel solar cell.
  • the square resistance of the low-doped n+ polysilicon layer of the novel solar cell ranges from 60 ohms to 80 ohms, and the square resistance of the n++ polysilicon layer ranges from 20 ohms to 40 ohms, including end values.
  • the method for manufacturing a novel solar cell comprises the following steps: performing boron doping on the front side of an n-type base silicon to obtain a boron doped layer; sequentially arranging a tunneling oxide layer and a polysilicon layer on the back side of the n-type base silicon; performing phosphorus diffusion on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer; performing laser re-doping on a metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region to obtain a photovoltaic front end; removing reaction byproducts on the surface of the photovoltaic front end by acid washing and alkali washing; sequentially arranging an aluminum oxide layer and a front nitride passivation layer on the front side of the photovoltaic front end after acid washing and alkali washing, and arranging a back nitride passivation layer on the back side to obtain a finished silicon
  • the present invention performs high-concentration doping only in the partial area where the metal electrode contacts, that is, the metal area, and performs low-concentration doping in the area outside the electrode.
  • This selective doping structure not only reduces the contact resistance between the polysilicon and the electrode, thereby increasing the contact, but also reduces the minority carrier recombination on the surface of the non-metallic area, thereby increasing the minority carrier lifetime and EL yield, so that the short-circuit current, open-circuit voltage and fill factor of the solar cell can be better improved, thereby improving the conversion efficiency.
  • the present invention also provides a new solar cell with the above beneficial effects.
  • FIG1 is a schematic flow chart of a specific implementation of a method for manufacturing a novel solar cell provided by the present invention
  • FIG2 is a schematic flow chart of another specific implementation of the method for manufacturing a novel solar cell provided by the present invention.
  • FIG3 is a schematic structural diagram of a specific implementation of the novel solar cell provided by the present invention.
  • the core of the present invention is to provide a novel method for manufacturing a solar cell, a flow chart of a specific implementation of which is shown in FIG1 , comprising:
  • S101 performing boron doping on the front surface of the n-type base silicon to obtain a boron doped layer.
  • the n-type base silicon may be textured to form a nano-scale texture surface on the surface of the n-type base silicon.
  • the boron doped layer is the P+ layer in the battery.
  • the back side of the n-type base silicon can also be pickled to remove BSG (borosilicate glass) produced during the setting of the boron doping layer, and then the back side is alkaline polished to improve the subsequent growth quality of the epitaxial layer on the back side.
  • BSG borosilicate glass
  • S102 sequentially disposing a tunneling oxide layer and a polysilicon layer on the back side of the n-type silicon substrate.
  • the thickness of the polysilicon layer ranges from 80 nanometers to 130 nanometers, including endpoint values, such as any one of 80.0 nanometers, 102.5 nanometers, or 130.0 nanometers.
  • S103 Diffusing phosphorus on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer.
  • depositing the low-doped n+ polysilicon layer specifically includes: depositing the polysilicon layer surface in sequence Perform initial deposition, temperature advancement and post-deposition.
  • the deposition time of the initial deposition is in the range of 300 seconds to 600 seconds, including endpoint values, such as any one of 300.0 seconds, 542.1 seconds or 600.0 seconds, and the deposition temperature is in the range of 780 degrees Celsius to 800 degrees Celsius, including endpoint values, such as any one of 780.0 degrees Celsius, 782.1 degrees Celsius or 800.0 degrees Celsius.
  • the large nitrogen flow rate is 500-800 sccm
  • the small nitrogen flow rate is 1000-1300 sccm
  • the oxygen flow rate is 500-800 sccm.
  • the temperature rise is performed, and the temperature range of the temperature rise is 880 degrees Celsius to 900 degrees Celsius, including endpoint values, such as any one of 880.0 degrees Celsius, 882.1 degrees Celsius or 900.0 degrees Celsius.
  • the post-deposition step is entered, and the deposition time of the post-deposition is in the range of 200 seconds to 400 seconds, and the deposition temperature is in the range of 780 degrees Celsius to 800 degrees Celsius, including endpoint values, such as any one of 780.0 degrees Celsius, 796.8 degrees Celsius or 800.0 degrees Celsius; the large nitrogen flow rate is 500-800sccm, the small nitrogen flow rate is 1000-1300sccm, and the oxygen flow rate is 500-800sccm.
  • the entire polysilicon layer is equivalent to undergoing a low-concentration, low-temperature deposition, followed by a high-temperature advancement, and finally cooling down and repeating the low-temperature deposition. Because the latter deposition is at a lower temperature, it is only enriched on the outer surface of the polysilicon to form a high-concentration PSG (phosphosilicate glass), which provides a phosphorus source for the laser processing in the following steps.
  • PSG phosphosilicate glass
  • S104 laser re-doping the metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region, thereby obtaining a photovoltaic front end.
  • the PSG is removed by laser re-doping, and part of the phosphorus in the PSG is driven into the low-doped n+ polysilicon layer to achieve re-doping.
  • the reaction byproducts include BSG and PSG generated in the aforementioned steps, and polysilicon that spreads to the front side when the polysilicon layer is provided.
  • this step includes:
  • A1 Cover the surface of the n++ polysilicon layer with a mask layer, and then perform acid and alkali washing on the photovoltaic front end to remove reaction byproducts.
  • a mask layer is set on the surface of the metal area on the back side (that is, the n++ polysilicon layer). After the laser re-doping, the polysilicon in the metal area on the back side is directly exposed. If it is directly pickled at this time, it will cause the polysilicon to be lost and the n++ polysilicon layer will be damaged. Therefore, it is necessary to first cover the n++ polysilicon layer with the mask layer to avoid damage to the n++ polysilicon layer, and then remove the mask layer to avoid affecting other subsequent process steps.
  • S106 an aluminum oxide layer and a front nitride passivation layer are sequentially arranged on the front side of the photovoltaic front end after acid washing and alkali washing, and a back nitride passivation layer is arranged on the back side to obtain a finished silicon wafer.
  • the front nitride passivation layer and/or the front nitride passivation layer may be a silicon nitride layer or a silicon oxynitride layer.
  • the front nitride passivation layer and the back nitride passivation layer are set simultaneously; further, in a PECVD device, the front nitride passivation layer and the back nitride passivation layer are set simultaneously on the front and back sides of the photovoltaic front end.
  • the aluminum oxide layer is a film layer formed by ALD.
  • S107 Disposing a front electrode and a back electrode on the surface of the finished silicon wafer to obtain a finished solar cell.
  • the process of setting the front electrode and the back electrode includes printing paste on the corresponding metal areas and sintering them.
  • the method for manufacturing a novel solar cell comprises the following steps: performing boron doping on the front side of an n-type base silicon to obtain a boron doped layer; sequentially arranging a tunneling oxide layer and a polysilicon layer on the back side of the n-type base silicon; performing phosphorus diffusion on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer; performing laser re-doping on the metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region to obtain a photovoltaic front end; removing reaction byproducts on the surface of the photovoltaic front end by acid washing and alkali washing; sequentially arranging an aluminum oxide layer and a front nitride passivation layer on the front side of the photovoltaic front end that has been acid washed and alkali washed.
  • a back nitride passivation layer is arranged on the back to obtain a finished silicon wafer; a front electrode and a back electrode are arranged on the surface of the finished silicon wafer to obtain a finished solar cell.
  • the present invention performs high-concentration doping only in the partial area where the metal electrode contacts, that is, the metal area, and performs low-concentration doping in the area outside the electrode.
  • Such a selective doping structure not only reduces the contact resistance between polycrystalline silicon and the electrode, thereby increasing the contact, but also reduces the minority carrier recombination on the surface of the non-metallic area, thereby increasing the minority carrier lifetime and EL yield, so that the short-circuit current, open-circuit voltage and fill factor of the solar cell can be better improved, thereby improving the conversion efficiency.
  • S201 performing boron doping on the front surface of the n-type base silicon to obtain a boron doped layer.
  • S202 sequentially disposing a tunneling oxide layer and a polysilicon layer on the back side of the n-type silicon substrate.
  • S203 Diffusing phosphorus on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer.
  • S204 laser re-doping the metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region, thereby obtaining a photovoltaic front end.
  • the oxidation mask layer is a silicon oxide layer.
  • S206 firstly perform acid washing on the photovoltaic front end, and then perform alkaline washing to remove the reaction by-products.
  • S207 an aluminum oxide layer and a front nitride passivation layer are sequentially arranged on the front side of the photovoltaic front end after acid washing and alkali washing, and a back nitride passivation layer is arranged on the back side to obtain a finished silicon wafer.
  • S208 Disposing a front electrode and a back electrode on the surface of the finished silicon wafer to obtain a finished solar cell.
  • the surface of the layer is directly oxidized.
  • a silicon oxide layer that will not be etched by acid i.e., the oxide mask layer
  • the ghost film is first pickled to remove a portion of the reaction by-products that can be etched by acid, and then alkali-washed. While removing the reaction by-products that can be etched by alkali, the oxide mask layer is removed. While protecting the n++ polysilicon layer, the steps of setting and removing the mask layer are greatly simplified, thereby improving production efficiency and reducing production difficulty.
  • a specific embodiment of preparing the novel solar cell is provided below, including:
  • Step 1 Texturing of N-type silicon wafer to form a nano-scale texture on the surface of the silicon wafer.
  • Step 2 Boron diffusion doping, Bcl3 or BBr3 gas is introduced into the front surface of the silicon wafer to form a P+ layer.
  • Step 3 The back side is pickled to remove BSG, and then the back side is alkaline washed and polished to form a flat surface structure.
  • Step 4 First form a silicon oxide layer on the front and back sides at high temperature and then grow a polysilicon layer.
  • the thickness of the polysilicon layer is 115nm.
  • Step 5 Phosphorus diffusion is performed on the back surface to form an N+ layer.
  • POCL3 is used for diffusion, with a deposition time of 450s, a deposition temperature of 800°C, a large nitrogen flow of 600sccm, a small nitrogen flow of 1110sccm, and an oxygen flow of 600sccm. Then the temperature is raised to 900°C for advancement, and then the temperature is lowered to 800°C for post-deposition. The post-deposition time is 300s, the large nitrogen flow is 600sccm, the small nitrogen flow is 1110sccm, and the oxygen flow is 600sccm.
  • the obtained N-type silicon wafer has a back side resistance of 70 ⁇ .
  • Step 6 The back surface emitter gate line area is laser processed to form an N++ layer, and the other non-contact areas are N+ layers. After phosphorus diffusion, the back surface is laser doped according to the back emitter pattern to obtain a doped area of 35 ⁇ and a non-doped area of 70 ⁇ .
  • Step 7 Chain oxidation is performed on the back surface to form a thin oxide layer on the N++ layer with a thickness of 1.5nm to play a protective role.
  • Step 8 Acidic and alkaline washing on the front and back sides removes BSG and PSG on the front and back sides, and removes the polysilicon on the front side at the same time.
  • Step 9 A 4 nm Al2O3 film is deposited on the front surface by ALD by introducing water/TMA/N2 under vacuum.
  • Step 10 Deposit a SixNy or SiONy film on the front surface using PECVD, and introduce NH3, N2O, and SiH4 under vacuum to form a SixNy or SiONy film with a thickness of 72nm.
  • Step 11 Deposit a SixNy or SiONy film on the back surface by PECVD, and introduce NH3, N2O, and SiH4 under vacuum to form a SixNy or SiONy film with a thickness of 80nm.
  • Step 12 Print electrodes on the front and back sides, and then perform sintering and light decay.
  • the efficiency of this embodiment is 0.26% higher than that of conventional topcon batteries, specifically, the opening voltage (UOC) is 2.37mV higher, the short current (ISC) is 48mA higher, the RS (resistance) is reduced by 0.2m ⁇ , and the filling (FF) is increased by 0.36%, which is consistent with the mechanism. At the same time, due to high contact and low recombination, the darkening of EL is reduced by 0.3%, which is in line with expectations.
  • the present invention also provides a novel solar cell having the above beneficial effects, wherein the novel solar cell is a solar cell manufactured by any of the above-mentioned methods for manufacturing the novel solar cell.
  • Figure 3 is a schematic diagram of the structure corresponding to the new solar cell in the present invention, which includes a boron-doped layer 20, an aluminum oxide layer 50, a front nitride passivation layer 60 and a front electrode 80 in sequence from the light-facing side of the n-type base silicon 10 to the outside; and includes a tunneling oxide layer 30, a polysilicon layer, a back nitride passivation layer 70 and a back electrode 90 in sequence from the backlight side of the n-type base silicon 10 to the outside, wherein the polysilicon layer includes an n++ polysilicon layer 42 located in the metal area and a low-doped n+ polysilicon layer 41 located in the non-metal area.
  • the square resistance of the n-type base silicon 10 in the novel solar cell ranges from 60 ohms to 80 ohms, including endpoint values, such as any one of 60.0 ohms, 75.3 ohms or 80.0 ohms;
  • the square resistance of the low-doped n+ polysilicon layer 41 of the novel solar cell ranges from 60 ohms to 80 ohms, and the square resistance of the n++ polysilicon layer 42 ranges from 20 ohms to 40 ohms, including endpoint values, such as any one of 20.0 ohms, 30.2 ohms or 40.0 ohms.
  • the width of the n++ polysilicon layer 42 ranges from 80 microns to 12 microns, including the endpoint values. Accordingly, the width of the back electrode (ie, the width of the corresponding metal secondary gate line) ranges from 30 microns to 50 microns, including the endpoint values.
  • the present invention performs high-concentration doping only in the partial area where the metal electrode contacts, that is, the metal area, and performs low-concentration doping in the area outside the electrode.
  • This selective doping structure not only reduces the contact resistance between the polysilicon and the electrode, thereby increasing the contact, but also reduces the minority carrier recombination on the surface of the non-metallic area, and increases the minority carrier life, so that the short-circuit current, open-circuit voltage and fill factor of the solar cell can be better improved, thereby improving the conversion efficiency.
  • the present invention also provides a new solar cell with the above beneficial effects.
  • each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments.
  • the same or similar parts between the embodiments can be referred to each other.
  • the description is relatively simple, and the relevant parts can be referred to the method part.

Abstract

The present invention relates to the field of solar cell manufacturing, and particularly relates to a new solar cell and a fabrication method therefor. The method comprises: subjecting the front surface of n-type substrate silicon to boron doping to obtain a boron-doped layer; sequentially disposing a tunnel oxide layer and a polycrystalline silicon layer on the back surface of the n-type substrate silicon; subjecting the surface of the polycrystalline silicon layer to phosphorus diffusion to form a lowly doped n+ polycrystalline silicon layer; subjecting a metal region of the lowly doped n+ polycrystalline silicon layer to laser heavy doping to form an n++ polycrystalline silicon layer located in the metal region, so as to obtain a photovoltaic precursor; removing reaction by-products on the surface of the photovoltaic precursor by means of acid pickling and alkali washing; sequentially disposing an aluminum oxide layer and a front nitride passivation layer on the front surface of the photovoltaic precursor having undergone acid pickling and alkali washing, and disposing a back nitride passivation layer on the back surface thereof to obtain a finished silicon wafer; and disposing a front electrode and a back electrode on the surfaces of the finished silicon wafer. In the present invention, contact is increased, minority carrier recombination on the surface of a non-metal region is reduced, and the conversion efficiency is improved.

Description

一种新型太阳能电池及其制作方法A novel solar cell and its manufacturing method 技术领域Technical Field
本发明涉及太阳能电池制造领域，特别是涉及一种新型太阳能电池及其制作方法。The invention relates to the field of solar cell manufacturing, and in particular to a novel solar cell and a manufacturing method thereof.
背景技术Background technique
近年来，随着topcon电池产能不断的扩张，其中由于双面电池相对perc电池具有较高的转化效率及双面率，可有效降低电站的LCOE，电池组件越来越受到市场终端的青睐。但是目前topcon电池效率方面仍存在一些问题，尤其电池背面因引入多晶硅层而导致的接触性及复合性问题对效率影响较大，所以开发高效且稳定的背接触性电池显得尤为迫切。In recent years, with the continuous expansion of topcon battery production capacity, the battery components are increasingly favored by the market terminals because the bifacial battery has higher conversion efficiency and bifaciality than the perc battery, which can effectively reduce the LCOE of the power station. However, there are still some problems in the efficiency of topcon batteries. In particular, the contact and composite problems caused by the introduction of the polysilicon layer on the back of the battery have a greater impact on the efficiency, so it is particularly urgent to develop efficient and stable back-contact batteries.
现阶段，topcon电池引入多晶硅后，只是通过重磷掺杂形成N+层，形成一个良好的背接触层，接触性能够稳定的控制，但由于非接触区域高掺杂量会提供较多的复合中心，对效率提升会有较大瓶颈。At present, after the topcon battery introduces polysilicon, it only forms an N+ layer through heavy phosphorus doping to form a good back contact layer. The contact performance can be stably controlled, but the high doping level in the non-contact area will provide more recombination centers, which will have a major bottleneck in improving efficiency.
因此，如何提供一种兼具良好的背面接触性能，同时较低的复合中心的电池方案，是本领域技术人员亟待解决的问题。Therefore, how to provide a battery solution that has both good back contact performance and low recombination center is an urgent problem to be solved by technical personnel in this field.
发明内容Summary of the invention
本发明的目的是提供一种新型太阳能电池及其制作方法，以解决现有技术中良好的背面接触性能与较低的复合中心不可兼得的问题。The purpose of the present invention is to provide a novel solar cell and a method for manufacturing the same, so as to solve the problem in the prior art that good back contact performance and low recombination center cannot be achieved at the same time.
为解决上述技术问题，本发明提供一种新型太阳能电池的制作方法，包括：In order to solve the above technical problems, the present invention provides a novel method for manufacturing a solar cell, comprising:
在n型基体硅的正面进行硼掺杂，得到硼掺杂层；Boron doping is performed on the front side of the n-type base silicon to obtain a boron doped layer;
在所述n型基体硅的背面依次设置遂穿氧化层及多晶硅层；A tunneling oxide layer and a polysilicon layer are sequentially arranged on the back side of the n-type silicon substrate;
对所述多晶硅层表面进行磷扩散形成低掺杂n+多晶硅层；Diffusion of phosphorus on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer;
对所述低掺杂n+多晶硅层的金属区进行激光重掺，形成位于所述金属区的n++多晶硅层，得到光伏前置物； Performing laser re-doping on the metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region to obtain a photovoltaic front end;
通过酸洗与碱洗去除所述光伏前置物表面的反应副产物；Removing reaction byproducts from the surface of the photovoltaic front end by acid washing and alkali washing;
在经过酸洗与碱洗的光伏前置物的正面依次设置氧化铝层与正面氮化物钝化层，并在背面设置背面氮化物钝化层，得到硅片成品；An aluminum oxide layer and a front nitride passivation layer are sequentially arranged on the front side of the photovoltaic front end after acid washing and alkali washing, and a back nitride passivation layer is arranged on the back side to obtain a finished silicon wafer;
在所述硅片成品的表面设置正面电极及背面电极，得到太阳能电池成品。A front electrode and a back electrode are arranged on the surface of the finished silicon wafer to obtain a finished solar cell.
可选地，在所述的新型太阳能电池的制作方法中，所述通过酸洗与碱洗去除所述光伏前置物表面的反应副产物包括：Optionally, in the method for manufacturing the novel solar cell, the step of removing reaction byproducts on the surface of the photovoltaic front end by acid washing and alkali washing comprises:
在所述n++多晶硅层表面覆盖掩膜层，再对所述光伏前置物进行酸洗与碱洗，去除反应副产物；Covering the surface of the n++ polysilicon layer with a mask layer, and then performing acid and alkali washing on the photovoltaic front end to remove reaction byproducts;
在去除所述反应副产物后，去除所述掩膜层。After removing the reaction byproducts, the mask layer is removed.
可选地，在所述的新型太阳能电池的制作方法中，所述在所述n++多晶硅层表面覆盖掩膜层包括：Optionally, in the method for manufacturing the novel solar cell, the step of covering the surface of the n++ polysilicon layer with a mask layer comprises:
对所述n++多晶硅层表面进行氧化，得到氧化掩膜层；Oxidizing the surface of the n++ polysilicon layer to obtain an oxidation mask layer;
相应地，所述对所述光伏前置物进行酸洗与碱洗，去除反应副产物；在去除所述反应副产物后，去除所述掩膜层包括：Accordingly, the photovoltaic front end is subjected to acid washing and alkali washing to remove reaction by-products; after removing the reaction by-products, removing the mask layer comprises:
先对所述光伏前置物进行酸洗，再进行碱洗，去除所述反应副产物。The photovoltaic front end is firstly acid-washed and then alkaline-washed to remove the reaction byproducts.
可选地，在所述的新型太阳能电池的制作方法中，所述正面氮化物钝化层与所述背面氮化物钝化层同时设置。Optionally, in the method for manufacturing the novel solar cell, the front nitride passivation layer and the back nitride passivation layer are provided simultaneously.
可选地，在所述的新型太阳能电池的制作方法中，所述对所述多晶硅层表面进行磷扩散形成低掺杂n+多晶硅层包括：Optionally, in the method for manufacturing the novel solar cell, the step of diffusing phosphorus on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer comprises:
对所述多晶硅层表面依次进行初沉积、升温推进及后沉积。The surface of the polysilicon layer is subjected to initial deposition, temperature-raising and post-deposition in sequence.
可选地，在所述的新型太阳能电池的制作方法中，所述初沉积的沉积时间的范围为300秒至600秒，沉积温度的范围为780摄氏度至800摄氏度，包括端点值。Optionally, in the method for manufacturing the novel solar cell, the deposition time of the initial deposition ranges from 300 seconds to 600 seconds, and the deposition temperature ranges from 780 degrees Celsius to 800 degrees Celsius, including endpoint values.
可选地，在所述的新型太阳能电池的制作方法中，所述升温推进的温度范围为880摄氏度至900摄氏度，包括端点值。Optionally, in the method for manufacturing the novel solar cell, the temperature range of the temperature increase is 880 degrees Celsius to 900 degrees Celsius, including endpoint values.
可选地，在所述的新型太阳能电池的制作方法中，所述后沉积的沉积时间 的范围为200秒至400秒，沉积温度的范围为780摄氏度至800摄氏度，包括端点值。Optionally, in the method for manufacturing the novel solar cell, the deposition time of the post-deposition is The range of is 200 seconds to 400 seconds, and the range of deposition temperature is 780 degrees Celsius to 800 degrees Celsius, both inclusive.
一种新型太阳能电池，所述新型太阳能电池为通过上述任一种所述的新型太阳能电池的制作方法制作的太阳能电池。A novel solar cell is a solar cell manufactured by any one of the above-mentioned methods for manufacturing the novel solar cell.
可选地，在所述的新型太阳能电池中，所述新型太阳能电池的低掺杂n+多晶硅层的方阻的范围为60欧姆至80欧姆，所述n++多晶硅层的方阻的范围为20欧姆至40欧姆，包括端点值。Optionally, in the novel solar cell, the square resistance of the low-doped n+ polysilicon layer of the novel solar cell ranges from 60 ohms to 80 ohms, and the square resistance of the n++ polysilicon layer ranges from 20 ohms to 40 ohms, including end values.
本发明所提供的新型太阳能电池的制作方法，通过在n型基体硅的正面进行硼掺杂，得到硼掺杂层；在所述n型基体硅的背面依次设置遂穿氧化层及多晶硅层；对所述多晶硅层表面进行磷扩散形成低掺杂n+多晶硅层；对所述低掺杂n+多晶硅层的金属区进行激光重掺，形成位于所述金属区的n++多晶硅层，得到光伏前置物；通过酸洗与碱洗去除所述光伏前置物表面的反应副产物；在经过酸洗与碱洗的光伏前置物的正面依次设置氧化铝层与正面氮化物钝化层，并在背面设置背面氮化物钝化层，得到硅片成品；在所述硅片成品的表面设置正面电极及背面电极，得到太阳能电池成品。The method for manufacturing a novel solar cell provided by the present invention comprises the following steps: performing boron doping on the front side of an n-type base silicon to obtain a boron doped layer; sequentially arranging a tunneling oxide layer and a polysilicon layer on the back side of the n-type base silicon; performing phosphorus diffusion on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer; performing laser re-doping on a metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region to obtain a photovoltaic front end; removing reaction byproducts on the surface of the photovoltaic front end by acid washing and alkali washing; sequentially arranging an aluminum oxide layer and a front nitride passivation layer on the front side of the photovoltaic front end after acid washing and alkali washing, and arranging a back nitride passivation layer on the back side to obtain a finished silicon wafer; arranging a front electrode and a back electrode on the surface of the finished silicon wafer to obtain a finished solar cell.
本发明仅在金属电极接触的部分区域，也即所述金属区进行了高浓度的掺杂，而在电极以外的区域进行了低浓度掺杂，这样选择性掺杂结构既降低了多晶硅和电极的接触电阻，从而增加了接触性，又降低了非金属区域表面的少子复合，提高了少子寿命与el良率，使得太阳能电池的短路电流及开路电压和填充因子都能得到较好的改善，从而提高转换效率。本发明同时还提供了一种具有上述有益效果的新型太阳能电池。The present invention performs high-concentration doping only in the partial area where the metal electrode contacts, that is, the metal area, and performs low-concentration doping in the area outside the electrode. This selective doping structure not only reduces the contact resistance between the polysilicon and the electrode, thereby increasing the contact, but also reduces the minority carrier recombination on the surface of the non-metallic area, thereby increasing the minority carrier lifetime and EL yield, so that the short-circuit current, open-circuit voltage and fill factor of the solar cell can be better improved, thereby improving the conversion efficiency. The present invention also provides a new solar cell with the above beneficial effects.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚的说明本发明实施例或现有技术的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单的介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出 创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention, and it is obvious to ordinary technicians in this field that the drawings are not necessarily limited to the embodiments of the present invention. On the premise of creative work, other drawings can be obtained based on these drawings.
图1为本发明提供的新型太阳能电池的制作方法的一种具体实施方式的流程示意图；FIG1 is a schematic flow chart of a specific implementation of a method for manufacturing a novel solar cell provided by the present invention;
图2为本发明提供的新型太阳能电池的制作方法的另一种具体实施方式的流程示意图；FIG2 is a schematic flow chart of another specific implementation of the method for manufacturing a novel solar cell provided by the present invention;
图3为本发明提供的新型太阳能电池的的一种具体实施方式的结构示意图。FIG3 is a schematic structural diagram of a specific implementation of the novel solar cell provided by the present invention.
具体实施方式Detailed ways
为了使本技术领域的人员更好地理解本发明方案，下面结合附图和具体实施方式对本发明作进一步的详细说明。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。In order to enable those skilled in the art to better understand the scheme of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.
本发明的核心是提供一种新型太阳能电池的制作方法，其一种具体实施方式的流程示意图如图1所示，包括：The core of the present invention is to provide a novel method for manufacturing a solar cell, a flow chart of a specific implementation of which is shown in FIG1 , comprising:
S101：在n型基体硅的正面进行硼掺杂，得到硼掺杂层。S101: performing boron doping on the front surface of the n-type base silicon to obtain a boron doped layer.
在本步骤之前，还可对所述n型基体硅制绒，在所述n型基体硅表面形成纳米级别的绒面。所述硼掺杂层即为本电池中的P+层。Before this step, the n-type base silicon may be textured to form a nano-scale texture surface on the surface of the n-type base silicon. The boron doped layer is the P+ layer in the battery.
在得到P+层之后，还可对所述n型基体硅的背面进行酸洗，去除设置所述硼掺杂层过程中产生的BSG(硼硅玻璃)，然后对背面进行碱抛光，以便提升后续背面的外延层的生长质量。After obtaining the P+ layer, the back side of the n-type base silicon can also be pickled to remove BSG (borosilicate glass) produced during the setting of the boron doping layer, and then the back side is alkaline polished to improve the subsequent growth quality of the epitaxial layer on the back side.
S102：在所述n型基体硅的背面依次设置遂穿氧化层及多晶硅层。S102: sequentially disposing a tunneling oxide layer and a polysilicon layer on the back side of the n-type silicon substrate.
所述多晶硅层的厚度范围为80纳米至130纳米，包括端点值，如80.0纳米、102.5纳米或130.0纳米中任一个。The thickness of the polysilicon layer ranges from 80 nanometers to 130 nanometers, including endpoint values, such as any one of 80.0 nanometers, 102.5 nanometers, or 130.0 nanometers.
S103：对所述多晶硅层表面进行磷扩散形成低掺杂n+多晶硅层。S103: Diffusing phosphorus on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer.
具体地，沉积所述低掺杂n+多晶硅层具体包括：对所述多晶硅层表面依次 进行初沉积、升温推进及后沉积。Specifically, depositing the low-doped n+ polysilicon layer specifically includes: depositing the polysilicon layer surface in sequence Perform initial deposition, temperature advancement and post-deposition.
所述初沉积的沉积时间的范围为300秒至600秒，包括端点值，如300.0秒、542.1秒或600.0秒中的任一个，沉积温度的范围为780摄氏度至800摄氏度，包括端点值，如780.0摄氏度、782.1摄氏度或800.0摄氏度中的任一个。更进一步地，所述初沉积中大氮流量500-800sccm，小氮流量1000-1300sccm，氧气流量500-800sccm。The deposition time of the initial deposition is in the range of 300 seconds to 600 seconds, including endpoint values, such as any one of 300.0 seconds, 542.1 seconds or 600.0 seconds, and the deposition temperature is in the range of 780 degrees Celsius to 800 degrees Celsius, including endpoint values, such as any one of 780.0 degrees Celsius, 782.1 degrees Celsius or 800.0 degrees Celsius. Furthermore, in the initial deposition, the large nitrogen flow rate is 500-800 sccm, the small nitrogen flow rate is 1000-1300 sccm, and the oxygen flow rate is 500-800 sccm.
完成所述初沉积之后，再进行所述升温推进，所述升温推进的温度范围为880摄氏度至900摄氏度，包括端点值，如880.0摄氏度、882.1摄氏度或900.0摄氏度中的任一个。After the initial deposition is completed, the temperature rise is performed, and the temperature range of the temperature rise is 880 degrees Celsius to 900 degrees Celsius, including endpoint values, such as any one of 880.0 degrees Celsius, 882.1 degrees Celsius or 900.0 degrees Celsius.
推进结束后，进入所述后沉积步骤，所述后沉积的沉积时间的范围为200秒至400秒，沉积温度的范围为780摄氏度至800摄氏度，包括端点值，如780.0摄氏度、796.8摄氏度或800.0摄氏度中的任一个；大氮流量500-800sccm，小氮流量1000-1300sccm，氧气流量500-800sccm。After the advancement is completed, the post-deposition step is entered, and the deposition time of the post-deposition is in the range of 200 seconds to 400 seconds, and the deposition temperature is in the range of 780 degrees Celsius to 800 degrees Celsius, including endpoint values, such as any one of 780.0 degrees Celsius, 796.8 degrees Celsius or 800.0 degrees Celsius; the large nitrogen flow rate is 500-800sccm, the small nitrogen flow rate is 1000-1300sccm, and the oxygen flow rate is 500-800sccm.
在本步骤的磷扩中，整个多晶硅层相当于进行了低浓度低温沉积，然后进行高温推进，最后降温重复低温沉积，因后沉积在较低的温度下沉积，并只富集在多晶硅外表面形成高浓度的PSG(磷硅酸盐玻璃)，给下面步骤中的激光处理提供了磷源。In the phosphorus diffusion of this step, the entire polysilicon layer is equivalent to undergoing a low-concentration, low-temperature deposition, followed by a high-temperature advancement, and finally cooling down and repeating the low-temperature deposition. Because the latter deposition is at a lower temperature, it is only enriched on the outer surface of the polysilicon to form a high-concentration PSG (phosphosilicate glass), which provides a phosphorus source for the laser processing in the following steps.
S104：对所述低掺杂n+多晶硅层的金属区进行激光重掺，形成位于所述金属区的n++多晶硅层，得到光伏前置物。S104: laser re-doping the metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region, thereby obtaining a photovoltaic front end.
承接上一步骤中在所述低掺杂n+多晶硅层表面设置的高浓度PSG，本步骤中通过激光重掺将所述PSG去除，并将PSG中的部分磷驱赶入所述低掺杂n+多晶硅层中，实现重掺杂。Following the high concentration PSG set on the surface of the low-doped n+ polysilicon layer in the previous step, in this step, the PSG is removed by laser re-doping, and part of the phosphorus in the PSG is driven into the low-doped n+ polysilicon layer to achieve re-doping.
S105：通过酸洗与碱洗去除所述光伏前置物表面的反应副产物。S105: removing reaction byproducts on the surface of the photovoltaic front end through acid washing and alkaline washing.
所述反应副产物包括前述步骤中产生的BSG与PSG，以及在设置所述多晶硅层时蔓延到正面的多晶硅。The reaction byproducts include BSG and PSG generated in the aforementioned steps, and polysilicon that spreads to the front side when the polysilicon layer is provided.
作为一种优选实施方式，本步骤包括： As a preferred implementation, this step includes:
A1：在所述n++多晶硅层表面覆盖掩膜层，再对所述光伏前置物进行酸洗与碱洗，去除反应副产物。A1: Cover the surface of the n++ polysilicon layer with a mask layer, and then perform acid and alkali washing on the photovoltaic front end to remove reaction byproducts.
A2：在去除所述反应副产物后，去除所述掩膜层。A2: After removing the reaction byproducts, removing the mask layer.
在背面的金属区(也即所述n++多晶硅层)表面设置掩膜层，由于经过所述激光重掺之后，背面的金属区的多晶硅直接暴露在外，此时如果直接酸洗，会导致多晶硅流失，所述n++多晶硅层遭到破坏，因此，需要先用所述掩膜层覆盖所述n++多晶硅层，避免所述n++多晶硅层被破坏，之后再去除掩膜层，以免影响后续其他工艺步骤。A mask layer is set on the surface of the metal area on the back side (that is, the n++ polysilicon layer). After the laser re-doping, the polysilicon in the metal area on the back side is directly exposed. If it is directly pickled at this time, it will cause the polysilicon to be lost and the n++ polysilicon layer will be damaged. Therefore, it is necessary to first cover the n++ polysilicon layer with the mask layer to avoid damage to the n++ polysilicon layer, and then remove the mask layer to avoid affecting other subsequent process steps.
S106：在经过酸洗与碱洗的光伏前置物的正面依次设置氧化铝层与正面氮化物钝化层，并在背面设置背面氮化物钝化层，得到硅片成品。S106: an aluminum oxide layer and a front nitride passivation layer are sequentially arranged on the front side of the photovoltaic front end after acid washing and alkali washing, and a back nitride passivation layer is arranged on the back side to obtain a finished silicon wafer.
所述正面氮化物钝化层和/或所述正面氮化物钝化层可为氮化硅层或氮氧化硅层。The front nitride passivation layer and/or the front nitride passivation layer may be a silicon nitride layer or a silicon oxynitride layer.
作为一种优选实施方式，所述正面氮化物钝化层与所述背面氮化物钝化层同时设置；再进一步地，在PECVD设备中，同时对所述光伏前置物的正面和背面设置所述正面氮化物钝化层与所述背面氮化物钝化层。As a preferred embodiment, the front nitride passivation layer and the back nitride passivation layer are set simultaneously; further, in a PECVD device, the front nitride passivation layer and the back nitride passivation layer are set simultaneously on the front and back sides of the photovoltaic front end.
所述氧化铝层为通过ALD设置的膜层。The aluminum oxide layer is a film layer formed by ALD.
S107：在所述硅片成品的表面设置正面电极及背面电极，得到太阳能电池成品。S107: Disposing a front electrode and a back electrode on the surface of the finished silicon wafer to obtain a finished solar cell.
设置所述正面电极与所述背面电极的过程包括在对应的金属区印刷浆料，并进行烧结。The process of setting the front electrode and the back electrode includes printing paste on the corresponding metal areas and sintering them.
本发明所提供的新型太阳能电池的制作方法，通过在n型基体硅的正面进行硼掺杂，得到硼掺杂层；在所述n型基体硅的背面依次设置遂穿氧化层及多晶硅层；对所述多晶硅层表面进行磷扩散形成低掺杂n+多晶硅层；对所述低掺杂n+多晶硅层的金属区进行激光重掺，形成位于所述金属区的n++多晶硅层，得到光伏前置物；通过酸洗与碱洗去除所述光伏前置物表面的反应副产物；在经过酸洗与碱洗的光伏前置物的正面依次设置氧化铝层与正面氮化物钝化层， 并在背面设置背面氮化物钝化层，得到硅片成品；在所述硅片成品的表面设置正面电极及背面电极，得到太阳能电池成品。本发明仅在金属电极接触的部分区域，也即所述金属区进行了高浓度的掺杂，而在电极以外的区域进行了低浓度掺杂，这样选择性掺杂结构既降低了多晶硅和电极的接触电阻，从而增加了接触性，又降低了非金属区域表面的少子复合，提高了少子寿命与el良率，使得太阳能电池的短路电流及开路电压和填充因子都能得到较好的改善，从而提高转换效率。The method for manufacturing a novel solar cell provided by the present invention comprises the following steps: performing boron doping on the front side of an n-type base silicon to obtain a boron doped layer; sequentially arranging a tunneling oxide layer and a polysilicon layer on the back side of the n-type base silicon; performing phosphorus diffusion on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer; performing laser re-doping on the metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region to obtain a photovoltaic front end; removing reaction byproducts on the surface of the photovoltaic front end by acid washing and alkali washing; sequentially arranging an aluminum oxide layer and a front nitride passivation layer on the front side of the photovoltaic front end that has been acid washed and alkali washed. A back nitride passivation layer is arranged on the back to obtain a finished silicon wafer; a front electrode and a back electrode are arranged on the surface of the finished silicon wafer to obtain a finished solar cell. The present invention performs high-concentration doping only in the partial area where the metal electrode contacts, that is, the metal area, and performs low-concentration doping in the area outside the electrode. Such a selective doping structure not only reduces the contact resistance between polycrystalline silicon and the electrode, thereby increasing the contact, but also reduces the minority carrier recombination on the surface of the non-metallic area, thereby increasing the minority carrier lifetime and EL yield, so that the short-circuit current, open-circuit voltage and fill factor of the solar cell can be better improved, thereby improving the conversion efficiency.
在上述具体实施方式的基础上，进一步对去除反应副产物的过程做限定，得到具体实施方式二，其流程示意图如图2所示，包括：On the basis of the above specific implementation, the process of removing the reaction by-products is further limited to obtain a specific implementation mode 2, the flow diagram of which is shown in FIG2, including:
S201：在n型基体硅的正面进行硼掺杂，得到硼掺杂层。S201: performing boron doping on the front surface of the n-type base silicon to obtain a boron doped layer.
S202：在所述n型基体硅的背面依次设置遂穿氧化层及多晶硅层。S202: sequentially disposing a tunneling oxide layer and a polysilicon layer on the back side of the n-type silicon substrate.
S203：对所述多晶硅层表面进行磷扩散形成低掺杂n+多晶硅层。S203: Diffusing phosphorus on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer.
S204：对所述低掺杂n+多晶硅层的金属区进行激光重掺，形成位于所述金属区的n++多晶硅层，得到光伏前置物。S204: laser re-doping the metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region, thereby obtaining a photovoltaic front end.
S205：对所述n++多晶硅层表面进行氧化，得到氧化掩膜层。S205: oxidizing the surface of the n++ polysilicon layer to obtain an oxidation mask layer.
所述氧化掩膜层即为氧化硅层。The oxidation mask layer is a silicon oxide layer.
S206：先对所述光伏前置物进行酸洗，再进行碱洗，去除所述反应副产物。S206: firstly perform acid washing on the photovoltaic front end, and then perform alkaline washing to remove the reaction by-products.
S207：在经过酸洗与碱洗的光伏前置物的正面依次设置氧化铝层与正面氮化物钝化层，并在背面设置背面氮化物钝化层，得到硅片成品。S207: an aluminum oxide layer and a front nitride passivation layer are sequentially arranged on the front side of the photovoltaic front end after acid washing and alkali washing, and a back nitride passivation layer is arranged on the back side to obtain a finished silicon wafer.
S208：在所述硅片成品的表面设置正面电极及背面电极，得到太阳能电池成品。S208: Disposing a front electrode and a back electrode on the surface of the finished silicon wafer to obtain a finished solar cell.
本具体实施方式与上述具体实施方式的不同之处在于，本具体实施方式中采用氧化硅层直接作为所述n++多晶硅层的掩膜层，其余步骤均与上述具体实施方式相同，此处在不再展开赘述。The difference between this specific implementation and the above specific implementation is that in this specific implementation, a silicon oxide layer is directly used as a mask layer for the n++ polysilicon layer, and the remaining steps are the same as those in the above specific implementation, which will not be described in detail here.
本具体实施方式在获得所述n++多晶硅层之后，直接对其进行表面氧化， 形成不会被酸蚀的氧化硅层(也即所述氧化掩膜层)，之后先对鬼片进行酸洗，去除一部分可被酸蚀的反应副产物，再进行碱洗，在去除可被碱蚀的反应副产物的同时，完成了对所述氧化掩膜层的去除，在保护所述n++多晶硅层的同时，大大简化了所述掩膜层的设置与去除步骤，提高了生产效率，降低了生产难度。In this specific implementation, after obtaining the n++ polysilicon layer, the surface of the layer is directly oxidized. A silicon oxide layer that will not be etched by acid (i.e., the oxide mask layer) is formed, and then the ghost film is first pickled to remove a portion of the reaction by-products that can be etched by acid, and then alkali-washed. While removing the reaction by-products that can be etched by alkali, the oxide mask layer is removed. While protecting the n++ polysilicon layer, the steps of setting and removing the mask layer are greatly simplified, thereby improving production efficiency and reducing production difficulty.
下面提供一种制备所述新型太阳能电池的具体实施例，包括：A specific embodiment of preparing the novel solar cell is provided below, including:
步骤1：N型硅片制绒，在硅片表面形成纳米级别的绒面。Step 1: Texturing of N-type silicon wafer to form a nano-scale texture on the surface of the silicon wafer.
步骤2：硼扩散掺杂，在硅片前表面通入Bcl3或者BBr3气体掺杂形成一层P+层。Step 2: Boron diffusion doping, Bcl3 or BBr3 gas is introduced into the front surface of the silicon wafer to form a P+ layer.
步骤3：背面酸洗去BSG，然后对背面进行碱洗抛光形成一个平整的表面结构。Step 3: The back side is pickled to remove BSG, and then the back side is alkaline washed and polished to form a flat surface structure.
步骤4：正背面高温下先形成氧化硅层然后再生长多晶硅层，多晶硅层厚度在115nm。Step 4: First form a silicon oxide layer on the front and back sides at high temperature and then grow a polysilicon layer. The thickness of the polysilicon layer is 115nm.
步骤5：背表面进行磷扩散形成N+层，采用POCL3进行扩散，沉积时间450s，沉积温度800℃，大氮流量600sccm，小氮流量1110sccm，氧气流量600sccm。然后进行升温到900℃推进，推进完再降温到800℃再进行后沉积，后沉积时间300s，大氮流量600sccm，小氮流量1110sccm，氧气流量600sccm。得到的N型硅片背面方阻在70Ω。Step 5: Phosphorus diffusion is performed on the back surface to form an N+ layer. POCL3 is used for diffusion, with a deposition time of 450s, a deposition temperature of 800°C, a large nitrogen flow of 600sccm, a small nitrogen flow of 1110sccm, and an oxygen flow of 600sccm. Then the temperature is raised to 900°C for advancement, and then the temperature is lowered to 800°C for post-deposition. The post-deposition time is 300s, the large nitrogen flow is 600sccm, the small nitrogen flow is 1110sccm, and the oxygen flow is 600sccm. The obtained N-type silicon wafer has a back side resistance of 70Ω.
步骤6：背表面发射极栅线区域进行激光处理，形成N++层，其他非接触区域为N+层。磷扩后背表面按背发射极图形进行激光掺杂，得到掺杂区域35Ω，非掺杂区域方阻70Ω。Step 6: The back surface emitter gate line area is laser processed to form an N++ layer, and the other non-contact areas are N+ layers. After phosphorus diffusion, the back surface is laser doped according to the back emitter pattern to obtain a doped area of 35Ω and a non-doped area of 70Ω.
步骤7：背表面进行链式氧化，在N++层形成一层薄氧化层，厚度在1.5nm，起到保护作用。Step 7: Chain oxidation is performed on the back surface to form a thin oxide layer on the N++ layer with a thickness of 1.5nm to play a protective role.
步骤8：正背面酸性及碱洗去除正背面的BSG及PSG，并同时去掉正面的多晶硅。Step 8: Acidic and alkaline washing on the front and back sides removes BSG and PSG on the front and back sides, and removes the polysilicon on the front side at the same time.
步骤9：前表面利用ALD沉积Al2O3薄膜，在真空下通过通入水/TMA/N2沉积4nm的Al2O3薄膜。 Step 9: A 4 nm Al2O3 film is deposited on the front surface by ALD by introducing water/TMA/N2 under vacuum.
步骤10：前表面利用PECVD沉积SixNy或者SiONy薄膜，在真空下通入NH3、N2O、SiH4形成SixNy或者SiONy薄膜，薄膜厚度在72nm。Step 10: Deposit a SixNy or SiONy film on the front surface using PECVD, and introduce NH3, N2O, and SiH4 under vacuum to form a SixNy or SiONy film with a thickness of 72nm.
步骤11：背表面利用PECVD沉积SixNy或者SiONy薄膜，在真空下通入NH3、N2O、SiH4形成SixNy或者SiONy薄膜，薄膜厚度在80nm。Step 11: Deposit a SixNy or SiONy film on the back surface by PECVD, and introduce NH3, N2O, and SiH4 under vacuum to form a SixNy or SiONy film with a thickness of 80nm.
步骤12：正背面进行电极印刷，然后进行烧结及光衰。Step 12: Print electrodes on the front and back sides, and then perform sintering and light decay.
而经过上述流程制备出的太阳能电池与常规topcon电池的参数差别见表1：The parameter differences between the solar cells prepared by the above process and the conventional topcon cells are shown in Table 1:
表1
Table 1
本实施例效率相对常规topcon电池高0.26％，具体是开压(uoc)高2.37mV，短流(isc)高48mA，rs(电阻)下降0.2mΩ，填充(ff)上升0.36％，与机理相符合。同时因高接触性，低复合，el发暗减少0.3％，符合预期。The efficiency of this embodiment is 0.26% higher than that of conventional topcon batteries, specifically, the opening voltage (UOC) is 2.37mV higher, the short current (ISC) is 48mA higher, the RS (resistance) is reduced by 0.2mΩ, and the filling (FF) is increased by 0.36%, which is consistent with the mechanism. At the same time, due to high contact and low recombination, the darkening of EL is reduced by 0.3%, which is in line with expectations.
本发明还提供了一种具有上述有益效果的一种新型太阳能电池，所述新型太阳能电池为通过上述任一种所述的新型太阳能电池的制作方法制作的太阳能电池。The present invention also provides a novel solar cell having the above beneficial effects, wherein the novel solar cell is a solar cell manufactured by any of the above-mentioned methods for manufacturing the novel solar cell.
请参考图3，图3为本发明中的新型太阳能电池对应的结构示意图，从所述n型基体硅10的迎光面向外依次包括硼掺杂层20、氧化铝层50、正面氮化物钝化层60及正面电极80；从所述n型基体硅10的背光面向外依次包括遂穿氧化层30、多晶硅层、背面氮化物钝化层70及背面电极90，其中，所述多晶硅层包括位于金属区的n++多晶硅层42及位于非金属区的低掺杂n+多晶硅层41。 Please refer to Figure 3, which is a schematic diagram of the structure corresponding to the new solar cell in the present invention, which includes a boron-doped layer 20, an aluminum oxide layer 50, a front nitride passivation layer 60 and a front electrode 80 in sequence from the light-facing side of the n-type base silicon 10 to the outside; and includes a tunneling oxide layer 30, a polysilicon layer, a back nitride passivation layer 70 and a back electrode 90 in sequence from the backlight side of the n-type base silicon 10 to the outside, wherein the polysilicon layer includes an n++ polysilicon layer 42 located in the metal area and a low-doped n+ polysilicon layer 41 located in the non-metal area.
作为一种优选实施方式，所述新型太阳能电池中的所述n型基体硅10的方阻的范围为60欧姆至80欧姆，包括端点值，如60.0欧姆、75.3欧姆或80.0欧姆中的任一个；所述新型太阳能电池的低掺杂n+多晶硅层41的方阻的范围为60欧姆至80欧姆，所述n++多晶硅层42的方阻范围为20欧姆至40欧姆，包括端点值，如20.0欧姆、30.2欧姆或40.0欧姆中任一个。As a preferred embodiment, the square resistance of the n-type base silicon 10 in the novel solar cell ranges from 60 ohms to 80 ohms, including endpoint values, such as any one of 60.0 ohms, 75.3 ohms or 80.0 ohms; the square resistance of the low-doped n+ polysilicon layer 41 of the novel solar cell ranges from 60 ohms to 80 ohms, and the square resistance of the n++ polysilicon layer 42 ranges from 20 ohms to 40 ohms, including endpoint values, such as any one of 20.0 ohms, 30.2 ohms or 40.0 ohms.
同时，所述n++多晶硅层42的宽度范围为未80微米至12微米，包括端点值，相应地，所述背面电极的宽度(即对应的金属副栅线的宽度)范围为30微米至50微米，包括端点值。Meanwhile, the width of the n++ polysilicon layer 42 ranges from 80 microns to 12 microns, including the endpoint values. Accordingly, the width of the back electrode (ie, the width of the corresponding metal secondary gate line) ranges from 30 microns to 50 microns, including the endpoint values.
本发明仅在金属电极接触的部分区域，也即所述金属区进行了高浓度的掺杂，而在电极以外的区域进行了低浓度掺杂，这样选择性掺杂结构既降低了多晶硅和电极的接触电阻，从而增加了接触性，又降低了非金属区域表面的少子复合，提高了少子寿命，使得太阳能电池的短路电流及开路电压和填充因子都能得到较好的改善，从而提高转换效率。本发明同时还提供了一种具有上述有益效果的新型太阳能电池。The present invention performs high-concentration doping only in the partial area where the metal electrode contacts, that is, the metal area, and performs low-concentration doping in the area outside the electrode. This selective doping structure not only reduces the contact resistance between the polysilicon and the electrode, thereby increasing the contact, but also reduces the minority carrier recombination on the surface of the non-metallic area, and increases the minority carrier life, so that the short-circuit current, open-circuit voltage and fill factor of the solar cell can be better improved, thereby improving the conversion efficiency. The present invention also provides a new solar cell with the above beneficial effects.
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其它实施例的不同之处，各个实施例之间相同或相似部分互相参见即可。对于实施例公开的装置而言，由于其与实施例公开的方法相对应，所以描述的比较简单，相关之处参见方法部分说明即可。In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.
需要说明的是，在本说明书中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。 It should be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.
以上对本发明所提供的新型太阳能电池及其制作方法进行了详细介绍。本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以对本发明进行若干改进和修饰，这些改进和修饰也落入本发明权利要求的保护范围内。 The above is a detailed introduction to the novel solar cell and its manufacturing method provided by the present invention. This article uses specific examples to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method and core idea of the present invention. It should be pointed out that for ordinary technicians in this technical field, without departing from the principle of the present invention, the present invention can also be improved and modified, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims (10)

  1. 一种新型太阳能电池的制作方法，其特征在于，包括：A novel method for manufacturing a solar cell, characterized by comprising:
    在n型基体硅的正面进行硼掺杂，得到硼掺杂层；Boron doping is performed on the front side of the n-type base silicon to obtain a boron doped layer;
    在所述n型基体硅的背面依次设置遂穿氧化层及多晶硅层；A tunneling oxide layer and a polysilicon layer are sequentially arranged on the back side of the n-type silicon substrate;
    对所述多晶硅层表面进行磷扩散形成低掺杂n+多晶硅层；Diffusion of phosphorus on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer;
    对所述低掺杂n+多晶硅层的金属区进行激光重掺，形成位于所述金属区的n++多晶硅层，得到光伏前置物；Performing laser re-doping on the metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region to obtain a photovoltaic front end;
    通过酸洗与碱洗去除所述光伏前置物表面的反应副产物；Removing reaction byproducts from the surface of the photovoltaic front end by acid washing and alkali washing;
    在经过酸洗与碱洗的光伏前置物的正面依次设置氧化铝层与正面氮化物钝化层，并在背面设置背面氮化物钝化层，得到硅片成品；An aluminum oxide layer and a front nitride passivation layer are sequentially arranged on the front side of the photovoltaic front end after acid washing and alkali washing, and a back nitride passivation layer is arranged on the back side to obtain a finished silicon wafer;
    在所述硅片成品的表面设置正面电极及背面电极，得到太阳能电池成品。A front electrode and a back electrode are arranged on the surface of the finished silicon wafer to obtain a finished solar cell.
  2. 如权利要求1所述的新型太阳能电池的制作方法，其特征在于，所述通过酸洗与碱洗去除所述光伏前置物表面的反应副产物包括：The method for manufacturing a novel solar cell according to claim 1, characterized in that the step of removing reaction byproducts from the surface of the photovoltaic front end by acid washing and alkali washing comprises:
    在所述n++多晶硅层表面覆盖掩膜层，再对所述光伏前置物进行酸洗与碱洗，去除反应副产物；Covering the surface of the n++ polysilicon layer with a mask layer, and then performing acid and alkali washing on the photovoltaic front end to remove reaction byproducts;
    在去除所述反应副产物后，去除所述掩膜层。After removing the reaction byproducts, the mask layer is removed.
  3. 如权利要求2所述的新型太阳能电池的制作方法，其特征在于，所述在所述n++多晶硅层表面覆盖掩膜层包括：The method for manufacturing a new solar cell according to claim 2, characterized in that the step of covering the surface of the n++ polysilicon layer with a mask layer comprises:
    对所述n++多晶硅层表面进行氧化，得到氧化掩膜层；Oxidizing the surface of the n++ polysilicon layer to obtain an oxidation mask layer;
    相应地，所述对所述光伏前置物进行酸洗与碱洗，去除反应副产物；在去除所述反应副产物后，去除所述掩膜层包括：Accordingly, the photovoltaic front end is subjected to acid washing and alkali washing to remove reaction by-products; after removing the reaction by-products, removing the mask layer comprises:
    先对所述光伏前置物进行酸洗，再进行碱洗，去除所述反应副产物。The photovoltaic front end is firstly acid-washed and then alkaline-washed to remove the reaction byproducts.
  4. 如权利要求1所述的新型太阳能电池的制作方法，其特征在于，所述正面氮化物钝化层与所述背面氮化物钝化层同时设置。The method for manufacturing a new solar cell according to claim 1 is characterized in that the front nitride passivation layer and the back nitride passivation layer are provided at the same time.
  5. 如权利要求1所述的新型太阳能电池的制作方法，其特征在于，所述对所述多晶硅层表面进行磷扩散形成低掺杂n+多晶硅层包括： The method for manufacturing a novel solar cell according to claim 1, characterized in that the step of diffusing phosphorus on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer comprises:
    对所述多晶硅层表面依次进行初沉积、升温推进及后沉积。The surface of the polysilicon layer is subjected to initial deposition, temperature-raising and post-deposition in sequence.
  6. 如权利要求5所述的新型太阳能电池的制作方法，其特征在于，所述初沉积的沉积时间的范围为300秒至600秒，沉积温度的范围为780摄氏度至800摄氏度，包括端点值。The method for manufacturing a new solar cell as described in claim 5 is characterized in that the deposition time of the initial deposition ranges from 300 seconds to 600 seconds, and the deposition temperature ranges from 780 degrees Celsius to 800 degrees Celsius, including endpoint values.
  7. 如权利要求5所述的新型太阳能电池的制作方法，其特征在于，所述升温推进的温度范围为880摄氏度至900摄氏度，包括端点值。The method for manufacturing a new solar cell as described in claim 5 is characterized in that the temperature range of the temperature increase is 880 degrees Celsius to 900 degrees Celsius, including the endpoint values.
  8. 如权利要求5所述的新型太阳能电池的制作方法，其特征在于，所述后沉积的沉积时间的范围为200秒至400秒，沉积温度的范围为780摄氏度至800摄氏度，包括端点值。The method for manufacturing a new solar cell as described in claim 5 is characterized in that the deposition time of the post-deposition ranges from 200 seconds to 400 seconds, and the deposition temperature ranges from 780 degrees Celsius to 800 degrees Celsius, including endpoint values.
  9. 一种新型太阳能电池，其特征在于，所述新型太阳能电池为通过如权利要求1至8任一项所述的新型太阳能电池的制作方法制作的太阳能电池。A novel solar cell, characterized in that the novel solar cell is a solar cell manufactured by the manufacturing method of the novel solar cell according to any one of claims 1 to 8.
  10. 如权利要求9所述的新型太阳能电池，其特征在于，所述新型太阳能电池的低掺杂n+多晶硅层的方阻的范围为60欧姆至80欧姆，所述n++多晶硅层的方阻的范围为20欧姆至40欧姆，包括端点值。 The new solar cell as described in claim 9 is characterized in that the square resistance of the low-doped n+ polysilicon layer of the new solar cell ranges from 60 ohms to 80 ohms, and the square resistance of the n++ polysilicon layer ranges from 20 ohms to 40 ohms, including end points.
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