WO2024066207A1 - Cellule solaire et son procédé de fabrication - Google Patents

Cellule solaire et son procédé de fabrication Download PDF

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WO2024066207A1
WO2024066207A1 PCT/CN2023/080440 CN2023080440W WO2024066207A1 WO 2024066207 A1 WO2024066207 A1 WO 2024066207A1 CN 2023080440 W CN2023080440 W CN 2023080440W WO 2024066207 A1 WO2024066207 A1 WO 2024066207A1
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solar cell
layer
polysilicon layer
manufacturing
doped
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Chinese (zh)
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付少剑
张明明
郁寅珑
白玉磐
蒋红洁
许明艳
鲁涛
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滁州捷泰新能源科技有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of solar cell manufacturing, and in particular to a novel solar cell and a manufacturing method thereof.
  • the topcon battery introduces polysilicon, it only forms an N+ layer through heavy phosphorus doping to form a good back contact layer.
  • the contact performance can be stably controlled, but the high doping level in the non-contact area will provide more recombination centers, which will have a major bottleneck in improving efficiency.
  • the purpose of the present invention is to provide a novel solar cell and a method for manufacturing the same, so as to solve the problem in the prior art that good back contact performance and low recombination center cannot be achieved at the same time.
  • the present invention provides a novel method for manufacturing a solar cell, comprising:
  • Boron doping is performed on the front side of the n-type base silicon to obtain a boron doped layer
  • a tunneling oxide layer and a polysilicon layer are sequentially arranged on the back side of the n-type silicon substrate;
  • An aluminum oxide layer and a front nitride passivation layer are sequentially arranged on the front side of the photovoltaic front end after acid washing and alkali washing, and a back nitride passivation layer is arranged on the back side to obtain a finished silicon wafer;
  • a front electrode and a back electrode are arranged on the surface of the finished silicon wafer to obtain a finished solar cell.
  • the step of removing reaction byproducts on the surface of the photovoltaic front end by acid washing and alkali washing comprises:
  • the mask layer is removed.
  • the step of covering the surface of the n++ polysilicon layer with a mask layer comprises:
  • the photovoltaic front end is subjected to acid washing and alkali washing to remove reaction by-products; after removing the reaction by-products, removing the mask layer comprises:
  • the photovoltaic front end is firstly acid-washed and then alkaline-washed to remove the reaction byproducts.
  • the front nitride passivation layer and the back nitride passivation layer are provided simultaneously.
  • the step of diffusing phosphorus on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer comprises:
  • the surface of the polysilicon layer is subjected to initial deposition, temperature-raising and post-deposition in sequence.
  • the deposition time of the initial deposition ranges from 300 seconds to 600 seconds
  • the deposition temperature ranges from 780 degrees Celsius to 800 degrees Celsius, including endpoint values.
  • the temperature range of the temperature increase is 880 degrees Celsius to 900 degrees Celsius, including endpoint values.
  • the deposition time of the post-deposition is The range of is 200 seconds to 400 seconds, and the range of deposition temperature is 780 degrees Celsius to 800 degrees Celsius, both inclusive.
  • a novel solar cell is a solar cell manufactured by any one of the above-mentioned methods for manufacturing the novel solar cell.
  • the square resistance of the low-doped n+ polysilicon layer of the novel solar cell ranges from 60 ohms to 80 ohms, and the square resistance of the n++ polysilicon layer ranges from 20 ohms to 40 ohms, including end values.
  • the method for manufacturing a novel solar cell comprises the following steps: performing boron doping on the front side of an n-type base silicon to obtain a boron doped layer; sequentially arranging a tunneling oxide layer and a polysilicon layer on the back side of the n-type base silicon; performing phosphorus diffusion on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer; performing laser re-doping on a metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region to obtain a photovoltaic front end; removing reaction byproducts on the surface of the photovoltaic front end by acid washing and alkali washing; sequentially arranging an aluminum oxide layer and a front nitride passivation layer on the front side of the photovoltaic front end after acid washing and alkali washing, and arranging a back nitride passivation layer on the back side to obtain a finished silicon
  • the present invention performs high-concentration doping only in the partial area where the metal electrode contacts, that is, the metal area, and performs low-concentration doping in the area outside the electrode.
  • This selective doping structure not only reduces the contact resistance between the polysilicon and the electrode, thereby increasing the contact, but also reduces the minority carrier recombination on the surface of the non-metallic area, thereby increasing the minority carrier lifetime and EL yield, so that the short-circuit current, open-circuit voltage and fill factor of the solar cell can be better improved, thereby improving the conversion efficiency.
  • the present invention also provides a new solar cell with the above beneficial effects.
  • FIG1 is a schematic flow chart of a specific implementation of a method for manufacturing a novel solar cell provided by the present invention
  • FIG2 is a schematic flow chart of another specific implementation of the method for manufacturing a novel solar cell provided by the present invention.
  • FIG3 is a schematic structural diagram of a specific implementation of the novel solar cell provided by the present invention.
  • the core of the present invention is to provide a novel method for manufacturing a solar cell, a flow chart of a specific implementation of which is shown in FIG1 , comprising:
  • S101 performing boron doping on the front surface of the n-type base silicon to obtain a boron doped layer.
  • the n-type base silicon may be textured to form a nano-scale texture surface on the surface of the n-type base silicon.
  • the boron doped layer is the P+ layer in the battery.
  • the back side of the n-type base silicon can also be pickled to remove BSG (borosilicate glass) produced during the setting of the boron doping layer, and then the back side is alkaline polished to improve the subsequent growth quality of the epitaxial layer on the back side.
  • BSG borosilicate glass
  • S102 sequentially disposing a tunneling oxide layer and a polysilicon layer on the back side of the n-type silicon substrate.
  • the thickness of the polysilicon layer ranges from 80 nanometers to 130 nanometers, including endpoint values, such as any one of 80.0 nanometers, 102.5 nanometers, or 130.0 nanometers.
  • S103 Diffusing phosphorus on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer.
  • depositing the low-doped n+ polysilicon layer specifically includes: depositing the polysilicon layer surface in sequence Perform initial deposition, temperature advancement and post-deposition.
  • the deposition time of the initial deposition is in the range of 300 seconds to 600 seconds, including endpoint values, such as any one of 300.0 seconds, 542.1 seconds or 600.0 seconds, and the deposition temperature is in the range of 780 degrees Celsius to 800 degrees Celsius, including endpoint values, such as any one of 780.0 degrees Celsius, 782.1 degrees Celsius or 800.0 degrees Celsius.
  • the large nitrogen flow rate is 500-800 sccm
  • the small nitrogen flow rate is 1000-1300 sccm
  • the oxygen flow rate is 500-800 sccm.
  • the temperature rise is performed, and the temperature range of the temperature rise is 880 degrees Celsius to 900 degrees Celsius, including endpoint values, such as any one of 880.0 degrees Celsius, 882.1 degrees Celsius or 900.0 degrees Celsius.
  • the post-deposition step is entered, and the deposition time of the post-deposition is in the range of 200 seconds to 400 seconds, and the deposition temperature is in the range of 780 degrees Celsius to 800 degrees Celsius, including endpoint values, such as any one of 780.0 degrees Celsius, 796.8 degrees Celsius or 800.0 degrees Celsius; the large nitrogen flow rate is 500-800sccm, the small nitrogen flow rate is 1000-1300sccm, and the oxygen flow rate is 500-800sccm.
  • the entire polysilicon layer is equivalent to undergoing a low-concentration, low-temperature deposition, followed by a high-temperature advancement, and finally cooling down and repeating the low-temperature deposition. Because the latter deposition is at a lower temperature, it is only enriched on the outer surface of the polysilicon to form a high-concentration PSG (phosphosilicate glass), which provides a phosphorus source for the laser processing in the following steps.
  • PSG phosphosilicate glass
  • S104 laser re-doping the metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region, thereby obtaining a photovoltaic front end.
  • the PSG is removed by laser re-doping, and part of the phosphorus in the PSG is driven into the low-doped n+ polysilicon layer to achieve re-doping.
  • the reaction byproducts include BSG and PSG generated in the aforementioned steps, and polysilicon that spreads to the front side when the polysilicon layer is provided.
  • this step includes:
  • A1 Cover the surface of the n++ polysilicon layer with a mask layer, and then perform acid and alkali washing on the photovoltaic front end to remove reaction byproducts.
  • a mask layer is set on the surface of the metal area on the back side (that is, the n++ polysilicon layer). After the laser re-doping, the polysilicon in the metal area on the back side is directly exposed. If it is directly pickled at this time, it will cause the polysilicon to be lost and the n++ polysilicon layer will be damaged. Therefore, it is necessary to first cover the n++ polysilicon layer with the mask layer to avoid damage to the n++ polysilicon layer, and then remove the mask layer to avoid affecting other subsequent process steps.
  • S106 an aluminum oxide layer and a front nitride passivation layer are sequentially arranged on the front side of the photovoltaic front end after acid washing and alkali washing, and a back nitride passivation layer is arranged on the back side to obtain a finished silicon wafer.
  • the front nitride passivation layer and/or the front nitride passivation layer may be a silicon nitride layer or a silicon oxynitride layer.
  • the front nitride passivation layer and the back nitride passivation layer are set simultaneously; further, in a PECVD device, the front nitride passivation layer and the back nitride passivation layer are set simultaneously on the front and back sides of the photovoltaic front end.
  • the aluminum oxide layer is a film layer formed by ALD.
  • S107 Disposing a front electrode and a back electrode on the surface of the finished silicon wafer to obtain a finished solar cell.
  • the process of setting the front electrode and the back electrode includes printing paste on the corresponding metal areas and sintering them.
  • the method for manufacturing a novel solar cell comprises the following steps: performing boron doping on the front side of an n-type base silicon to obtain a boron doped layer; sequentially arranging a tunneling oxide layer and a polysilicon layer on the back side of the n-type base silicon; performing phosphorus diffusion on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer; performing laser re-doping on the metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region to obtain a photovoltaic front end; removing reaction byproducts on the surface of the photovoltaic front end by acid washing and alkali washing; sequentially arranging an aluminum oxide layer and a front nitride passivation layer on the front side of the photovoltaic front end that has been acid washed and alkali washed.
  • a back nitride passivation layer is arranged on the back to obtain a finished silicon wafer; a front electrode and a back electrode are arranged on the surface of the finished silicon wafer to obtain a finished solar cell.
  • the present invention performs high-concentration doping only in the partial area where the metal electrode contacts, that is, the metal area, and performs low-concentration doping in the area outside the electrode.
  • Such a selective doping structure not only reduces the contact resistance between polycrystalline silicon and the electrode, thereby increasing the contact, but also reduces the minority carrier recombination on the surface of the non-metallic area, thereby increasing the minority carrier lifetime and EL yield, so that the short-circuit current, open-circuit voltage and fill factor of the solar cell can be better improved, thereby improving the conversion efficiency.
  • S201 performing boron doping on the front surface of the n-type base silicon to obtain a boron doped layer.
  • S202 sequentially disposing a tunneling oxide layer and a polysilicon layer on the back side of the n-type silicon substrate.
  • S203 Diffusing phosphorus on the surface of the polysilicon layer to form a low-doped n+ polysilicon layer.
  • S204 laser re-doping the metal region of the low-doped n+ polysilicon layer to form an n++ polysilicon layer located in the metal region, thereby obtaining a photovoltaic front end.
  • the oxidation mask layer is a silicon oxide layer.
  • S206 firstly perform acid washing on the photovoltaic front end, and then perform alkaline washing to remove the reaction by-products.
  • S207 an aluminum oxide layer and a front nitride passivation layer are sequentially arranged on the front side of the photovoltaic front end after acid washing and alkali washing, and a back nitride passivation layer is arranged on the back side to obtain a finished silicon wafer.
  • S208 Disposing a front electrode and a back electrode on the surface of the finished silicon wafer to obtain a finished solar cell.
  • the surface of the layer is directly oxidized.
  • a silicon oxide layer that will not be etched by acid i.e., the oxide mask layer
  • the ghost film is first pickled to remove a portion of the reaction by-products that can be etched by acid, and then alkali-washed. While removing the reaction by-products that can be etched by alkali, the oxide mask layer is removed. While protecting the n++ polysilicon layer, the steps of setting and removing the mask layer are greatly simplified, thereby improving production efficiency and reducing production difficulty.
  • a specific embodiment of preparing the novel solar cell is provided below, including:
  • Step 1 Texturing of N-type silicon wafer to form a nano-scale texture on the surface of the silicon wafer.
  • Step 2 Boron diffusion doping, Bcl3 or BBr3 gas is introduced into the front surface of the silicon wafer to form a P+ layer.
  • Step 3 The back side is pickled to remove BSG, and then the back side is alkaline washed and polished to form a flat surface structure.
  • Step 4 First form a silicon oxide layer on the front and back sides at high temperature and then grow a polysilicon layer.
  • the thickness of the polysilicon layer is 115nm.
  • Step 5 Phosphorus diffusion is performed on the back surface to form an N+ layer.
  • POCL3 is used for diffusion, with a deposition time of 450s, a deposition temperature of 800°C, a large nitrogen flow of 600sccm, a small nitrogen flow of 1110sccm, and an oxygen flow of 600sccm. Then the temperature is raised to 900°C for advancement, and then the temperature is lowered to 800°C for post-deposition. The post-deposition time is 300s, the large nitrogen flow is 600sccm, the small nitrogen flow is 1110sccm, and the oxygen flow is 600sccm.
  • the obtained N-type silicon wafer has a back side resistance of 70 ⁇ .
  • Step 6 The back surface emitter gate line area is laser processed to form an N++ layer, and the other non-contact areas are N+ layers. After phosphorus diffusion, the back surface is laser doped according to the back emitter pattern to obtain a doped area of 35 ⁇ and a non-doped area of 70 ⁇ .
  • Step 7 Chain oxidation is performed on the back surface to form a thin oxide layer on the N++ layer with a thickness of 1.5nm to play a protective role.
  • Step 8 Acidic and alkaline washing on the front and back sides removes BSG and PSG on the front and back sides, and removes the polysilicon on the front side at the same time.
  • Step 9 A 4 nm Al2O3 film is deposited on the front surface by ALD by introducing water/TMA/N2 under vacuum.
  • Step 10 Deposit a SixNy or SiONy film on the front surface using PECVD, and introduce NH3, N2O, and SiH4 under vacuum to form a SixNy or SiONy film with a thickness of 72nm.
  • Step 11 Deposit a SixNy or SiONy film on the back surface by PECVD, and introduce NH3, N2O, and SiH4 under vacuum to form a SixNy or SiONy film with a thickness of 80nm.
  • Step 12 Print electrodes on the front and back sides, and then perform sintering and light decay.
  • the efficiency of this embodiment is 0.26% higher than that of conventional topcon batteries, specifically, the opening voltage (UOC) is 2.37mV higher, the short current (ISC) is 48mA higher, the RS (resistance) is reduced by 0.2m ⁇ , and the filling (FF) is increased by 0.36%, which is consistent with the mechanism. At the same time, due to high contact and low recombination, the darkening of EL is reduced by 0.3%, which is in line with expectations.
  • the present invention also provides a novel solar cell having the above beneficial effects, wherein the novel solar cell is a solar cell manufactured by any of the above-mentioned methods for manufacturing the novel solar cell.
  • Figure 3 is a schematic diagram of the structure corresponding to the new solar cell in the present invention, which includes a boron-doped layer 20, an aluminum oxide layer 50, a front nitride passivation layer 60 and a front electrode 80 in sequence from the light-facing side of the n-type base silicon 10 to the outside; and includes a tunneling oxide layer 30, a polysilicon layer, a back nitride passivation layer 70 and a back electrode 90 in sequence from the backlight side of the n-type base silicon 10 to the outside, wherein the polysilicon layer includes an n++ polysilicon layer 42 located in the metal area and a low-doped n+ polysilicon layer 41 located in the non-metal area.
  • the square resistance of the n-type base silicon 10 in the novel solar cell ranges from 60 ohms to 80 ohms, including endpoint values, such as any one of 60.0 ohms, 75.3 ohms or 80.0 ohms;
  • the square resistance of the low-doped n+ polysilicon layer 41 of the novel solar cell ranges from 60 ohms to 80 ohms, and the square resistance of the n++ polysilicon layer 42 ranges from 20 ohms to 40 ohms, including endpoint values, such as any one of 20.0 ohms, 30.2 ohms or 40.0 ohms.
  • the width of the n++ polysilicon layer 42 ranges from 80 microns to 12 microns, including the endpoint values. Accordingly, the width of the back electrode (ie, the width of the corresponding metal secondary gate line) ranges from 30 microns to 50 microns, including the endpoint values.
  • the present invention performs high-concentration doping only in the partial area where the metal electrode contacts, that is, the metal area, and performs low-concentration doping in the area outside the electrode.
  • This selective doping structure not only reduces the contact resistance between the polysilicon and the electrode, thereby increasing the contact, but also reduces the minority carrier recombination on the surface of the non-metallic area, and increases the minority carrier life, so that the short-circuit current, open-circuit voltage and fill factor of the solar cell can be better improved, thereby improving the conversion efficiency.
  • the present invention also provides a new solar cell with the above beneficial effects.
  • each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments.
  • the same or similar parts between the embodiments can be referred to each other.
  • the description is relatively simple, and the relevant parts can be referred to the method part.

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  • Photovoltaic Devices (AREA)

Abstract

La présente invention se rapporte au domaine de la fabrication des cellules solaires, et se réfère en particulier à une nouvelle cellule solaire et à son procédé de fabrication. Le procédé consiste à : soumettre la surface avant d'un substrat de silicium de type n à un dopage au bore afin d'obtenir une couche dopée au bore ; disposer séquentiellement une couche d'oxyde tunnel et une couche de silicium polycristallin sur la surface arrière du substrat de silicium de type n ; soumettre la surface de la couche de silicium polycristallin à une diffusion de phosphore pour former une couche de silicium polycristallin n+ faiblement dopée ; soumettre une région métallique de la couche de silicium polycristallin n+ faiblement dopée à un dopage lourd au laser pour former une couche de silicium polycristallin n++ se situant dans la région métallique, de façon à obtenir un précurseur photovoltaïque ; éliminer les sous-produits de réaction sur la surface du précurseur photovoltaïque au moyen d'un décapage à l'acide et d'un lavage alcalin ; disposer séquentiellement une couche d'oxyde d'aluminium et une couche avant de passivation au nitrure sur la surface avant du précurseur photovoltaïque ayant subi un décapage à l'acide et un lavage alcalin, et disposer une couche arrière de passivation au nitrure sur sa surface arrière afin d'obtenir une tranche de silicium finie ; et disposer une électrode avant et une électrode arrière sur les surfaces de la tranche de silicium finie. La présente invention permet d'augmenter les contacts, de réduire une recombinaison de porteurs minoritaires sur la surface d'une région non métallique et d'améliorer l'efficacité de conversion.
PCT/CN2023/080440 2022-09-30 2023-03-09 Cellule solaire et son procédé de fabrication WO2024066207A1 (fr)

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CN115411151A (zh) * 2022-09-30 2022-11-29 滁州捷泰新能源科技有限公司 一种新型太阳能电池及其制作方法
CN115911186A (zh) * 2023-01-30 2023-04-04 通威太阳能(眉山)有限公司 一种太阳电池及其制备方法

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