CN210897294U - Solar cell - Google Patents
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- CN210897294U CN210897294U CN201921837898.2U CN201921837898U CN210897294U CN 210897294 U CN210897294 U CN 210897294U CN 201921837898 U CN201921837898 U CN 201921837898U CN 210897294 U CN210897294 U CN 210897294U
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- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 40
- 230000005641 tunneling Effects 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000002161 passivation Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 230000003667 anti-reflective effect Effects 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 230000031700 light absorption Effects 0.000 abstract description 8
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 229920005591 polysilicon Polymers 0.000 description 26
- 238000009792 diffusion process Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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Abstract
The application provides a solar cell, include semiconductor substrate, metal electrode and stack gradually and set up the tunneling layer and the doping polycrystalline silicon layer of semiconductor substrate side surface, the doping polycrystalline silicon layer has first portion and second portion, the metal electrode with the first portion contacts, the thickness of first portion is greater than the thickness of second portion, just the doping concentration of first portion is greater than the doping concentration of second portion. The thickness of the first part is set to be larger, the doping concentration is higher, and the recombination loss of the metal electrode area can be effectively reduced; the second part has smaller thickness and lower doping concentration, and reduces the absorption of light while passivating the non-electrode area of the semiconductor substrate.
Description
Technical Field
The application relates to the technical field of solar power generation, in particular to a solar cell.
Background
With the rapid development of photovoltaic technology, the market demand for efficient cells and components is also increasing. In the case of a crystalline silicon battery, in order to reduce the recombination loss on the surface of the battery and reduce the contact resistance of a metal electrode, a passivation structure combining a tunneling oxide layer and a polycrystalline silicon film layer is disclosed in the industry.
However, the polysilicon film layer in the passivation structure has a strong light absorption coefficient, so that the short-circuit current of the battery can be reduced, and the improvement of the battery efficiency is limited. At present, the current loss is mainly reduced by reducing the thickness of a polycrystalline silicon film layer as much as possible; or the tunneling oxide layer and the polycrystalline silicon film layer are only arranged in the metal electrode area of the battery, so that the light absorption and passivation effects of the battery are difficult to be considered. The industry also discloses a scheme of arranging polysilicon film layers with different thicknesses in a metal electrode area and a non-electrode area, and the light loss of the non-electrode area is reduced by reducing the thickness of the polysilicon film layer in the non-electrode area. However, in order to ensure the uniform stability of the film structure, the thickness of the polysilicon film layer in the non-electrode region cannot be infinitely reduced, and how to further optimize the battery structure and improve the battery conversion efficiency becomes a technical problem to be solved urgently in the industry on the basis of the existing process.
SUMMERY OF THE UTILITY MODEL
The application aims to provide a solar cell, which can improve the surface passivation performance of a semiconductor substrate, ensure light absorption and improve conversion efficiency.
In order to achieve the above object, an embodiment of the present application provides a solar cell, including a semiconductor substrate, a metal electrode, and a tunneling layer and a doped polysilicon layer sequentially stacked on a surface of one side of the semiconductor substrate, where the doped polysilicon layer has a first portion and a second portion, the metal electrode is in contact with the first portion, the thickness of the first portion is greater than that of the second portion, and the doping concentration of the first portion is greater than that of the second portion.
As a further improvement of the embodiment of the application, the doping concentration of the first part is 1E 20-8E 20cm-3(ii) a The doping concentration of the second part is 2E 19-8E 19cm-3。
As a further improvement of the embodiment of the application, the thickness of the first part is set to be 80-300 nm, and the thickness of the second part is set to be 10-80 nm.
As a further improvement of the embodiment of the application, the tunneling layer is a silicon oxide film or a silicon oxynitride film or a composite film formed by mutually laminating the silicon oxide film and the silicon oxynitride film, and the thickness of the tunneling layer is set to be 0.5-3 nm.
As a further improvement of the embodiment of the present application, the solar cell further includes an antireflection layer disposed on a surface of the doped polysilicon layer on a side facing away from the semiconductor substrate, and the metal electrode penetrates through the antireflection layer and is in contact with the first portion.
As a further improvement of the embodiment of the present application, the antireflection layer includes a first antireflection film layer, is stacked and arranged to deviate from the first antireflection film layer at a second antireflection film layer on the surface of one side of the semiconductor substrate, the thickness of the first antireflection film layer is smaller than that of the second antireflection film layer, and the refractive index of the first antireflection film layer is greater than that of the second antireflection film layer.
As a further improvement of the embodiment of the present application, the tunneling layer and the doped polysilicon layer are sequentially stacked on the front surface of the semiconductor substrate; the solar cell further includes a back passivation layer formed on the back surface of the semiconductor substrate, and a back electrode penetrating the back passivation layer and contacting the semiconductor substrate.
As a further improvement of the embodiment of the present application, the semiconductor substrate is a P-type silicon wafer; the back passivation layer is set to be Al2O3Film layer of said Al2O3The thickness of the film layer is set to be 3-20 nm.
As a further improvement of the embodiment of the application, the solar cell is a double-sided cell, and the back surface of the solar cell is sequentially provided with a back tunneling layer, a back doped polycrystalline silicon layer and a back antireflection layer in a stacking manner.
As a further improvement of the embodiment of the present application, the back-doped polysilicon layer has a third portion and a fourth portion, the thickness of the third portion is greater than that of the fourth portion, and the doping concentration of the third portion is greater than that of the fourth portion; the solar cell further includes a back electrode penetrating the back anti-reflective layer and contacting the third portion.
The beneficial effect of this application is: by adopting the solar cell, the structure of the doped polycrystalline silicon layer is optimally designed, the thickness of the first part is set to be larger, the doping concentration is higher, and the recombination loss and the contact resistance of a metal electrode area can be effectively reduced; the second part is small in thickness and low in doping concentration, and reduces absorption of light rays when passivating a non-electrode area of the semiconductor substrate, so that conversion efficiency of the solar cell is improved.
Drawings
FIG. 1 is a schematic structural diagram of a first embodiment of a solar cell of the present application;
FIG. 2 is a schematic structural diagram of a second embodiment of a solar cell of the present application;
FIG. 3 is a schematic structural diagram of a third embodiment of a solar cell of the present application;
fig. 4 is a schematic structural diagram of a solar cell according to a fourth embodiment of the present application.
10-a semiconductor substrate; 11-a diffusion layer; 20-a tunneling layer; 30-doping a polysilicon layer; 31-a first part; 32-a second portion; 20' -a back tunneling layer; 30' -back side doping polycrystalline silicon layer; 33-a third portion; 34-fourth section; 40-an anti-reflection layer; 50-a metal electrode; 60-back passivation layer; 70-back electrode, 80-back antireflection layer.
Detailed Description
The present application will be described in detail below with reference to embodiments shown in the drawings. The present invention is not limited to the above embodiments, and structural, methodological, or functional changes made by one of ordinary skill in the art according to the present embodiments are included in the scope of the present invention.
Referring to fig. 1, a solar cell 100 provided in the present application includes a semiconductor substrate 10, a tunneling layer 20, a doped polysilicon layer 30, an anti-reflective layer 40, and a metal electrode 50 penetrating the anti-reflective layer 40 and contacting the doped polysilicon layer 30, which are sequentially stacked on a surface of one side of the semiconductor substrate 10.
The tunneling layer 20 can isolate the metal electrode 50 from contacting the semiconductor substrate 10 without affecting current transfer, and in combination with the doped polysilicon layer 30, improves the surface passivation effect of the semiconductor substrate 10 and reduces the reverse saturation current J0. Here, the tunneling layer 20 is provided as a silicon oxide film, a silicon oxynitride film, or a composite film in which a silicon oxide film and a silicon oxynitride film are stacked on each other. The thickness of the tunneling layer 20 is set to be 0.5-3 nm, and more preferably, the thickness of the tunneling layer 20 is set to be 1-2 nm.
The doped polysilicon layer 30 has a first portion 31 and a second portion 32 beside the first portion 31, and the metal electrode 50 is disposed on the first portion 31. The thickness of the first portion 31 is greater than the thickness of the second portion 32, and the doping concentration of the first portion 31 is greater than the doping concentration of the second portion 32, so that the absorption of the incident light by the second portion 32 is less than the absorption of the incident light by the first portion 31. In other words, the first portion 31 is disposed in the electrode region of the semiconductor substrate 10, which is located between the metal electrode 50 and the tunneling layer 20; the second portion 32 is then disposed in a non-electrode area of the semiconductor substrate 10. For the electrode region and the non-electrode region, the doped polysilicon layer 30 can reduce the recombination loss and the contact resistance at the position of the metal electrode 50 and reduce the light absorption influence of the non-electrode region by the design of distinguishing the thickness and the doping concentration.
The thickness of the first portion 31 may be set to 80 to 300 nm; the second portion 32 is typically formed by partial etching, and the second portion is formed by etching in the prior art to ensure uniform stability of the film layerThe thickness of the sub-portion 32 is preferably 10 to 80 nm. The doping concentration of the first part 31 is 1E 20-8E 20cm-3(ii) a The doping concentration of the second part 32 is 2E 19-8E 19cm-3. In practical manufacturing process, we can set the thickness of the first portion 31 to 80nm, 120nm, 170nm or 200 nm; the thickness of the second portion 32 is set to 10nm, 20nm or 30 nm. It should be noted that the set thicknesses of the first portion 31 and the second portion 32 are not strictly precise value points, but are controlled to be within a reasonable fluctuation range of the corresponding set thicknesses according to the in-situ process.
For improving the film performance and the antireflection effect of the antireflection layer 40, the burnthrough performance of the antireflection layer 40 is considered at the same time, and the antireflection layer 40 can be arranged to be a laminated or gradually-changed film structure through the adjustment of technological parameters such as gas flow, reaction time and temperature. Here, the antireflection layer 40 has a first antireflection film layer, a second antireflection film layer stacked and disposed on a surface of the first antireflection film layer facing away from the semiconductor substrate 10, a thickness of the first antireflection film layer is smaller than a thickness of the second antireflection film layer, and a refractive index of the first antireflection film layer is larger than a refractive index of the second antireflection film layer. The antireflection layer 40 is composed of a plurality of silicon nitride film layers with different refractive indexes and thicknesses, and the thickness is preferably 70-85 nm. Certainly, the antireflective layer 40 may also be provided with a silicon oxide film and a silicon oxynitride film with relatively small refractive index, and at this time, the thickness of the antireflective layer 40 needs to be increased appropriately, preferably 80-100 nm.
In this embodiment, the semiconductor substrate 10 is a P-type silicon wafer, and the resistivity thereof is set to 0.5 to 6 Ω · cm. The tunneling layer 20, the doped polysilicon layer 30, and the anti-reflection layer 40 are sequentially disposed on the front surface of the semiconductor substrate 10, and the metal electrode 50 is a front surface electrode of the solar cell 100. The metal electrode 50 is preferably a silver electrode.
The solar cell 100 further includes a back passivation layer 60 formed on the back surface of the semiconductor substrate 10, and a back electrode 70 penetrating the back passivation layer 60 and contacting the semiconductor substrate 10. Wherein the back is bluntLayer 60 may be provided as Al2O3Film layer of said Al2O3The thickness of the film layer is set to be 3-20 nm. Here, the solar cell 100 is configured as a double-sided cell, the solar cell 100 further includes a back passivation layer 60 deviating from the back antireflection layer 80 on the surface of one side of the semiconductor substrate 10, the back antireflection layer 80 may also be a silicon nitride film, and the thickness of the back antireflection layer 80 is set to be 60-150 nm.
Referring to fig. 2, in another embodiment of the present application, after the surface treatment of the semiconductor substrate 10 is completed, the front side diffusion is performed to obtain the corresponding diffusion layer 11, the diffusion layer 11 can prevent the doped polysilicon layer 30 from being damaged to affect the transmission of the surface current, and the structure of the corresponding solar cell 100 is more stable and reliable. In the actual preparation, the semiconductor substrate 10 after the diffusion is completed is cleaned and dried by using an HF solution, and then the tunneling layer 20 and the doped polysilicon layer 30 are sequentially prepared on the diffusion layer 11, wherein the doping type of the diffusion layer 11 is consistent with the doping type of the doped polysilicon layer 30.
Referring to fig. 3, in another embodiment of the present application, the solar cell 100 is configured as a double-sided cell, and a back tunneling layer 20', a back doped polysilicon layer 30', and a back anti-reflection layer 80 are sequentially stacked on the back of the solar cell 100. The back side doped polysilicon layer 30' has a third portion 33 and a fourth portion 34, the thickness of the third portion 33 is greater than the thickness of the fourth portion 34, the doping concentration of the third portion 33 is greater than the doping concentration of the fourth portion 34, and the back side electrode 70 penetrates through the back side anti-reflective layer 80 and contacts the third portion 33. The back side doped polysilicon layer 30' is of a doping type opposite to that of the doped polysilicon layer 30, and the design realizes passivation of the back side of the semiconductor substrate 10 and reduces influence on light absorption of the back side.
Referring to fig. 4, in the case of a double-sided battery, the back tunneling layer 20 'and the back doped polysilicon layer 30' may be disposed only on the back surface of the semiconductor substrate 10. The back electrode 70 penetrates the back anti-reflective layer 80 and contacts the back doped polysilicon layer 30'; a diffusion layer 11 is formed on the front surface of the semiconductor substrate 10, and the metal electrode 50 penetrates through the anti-reflection layer 40 and forms ohmic contact with the diffusion layer 11. Of course, a front passivation film layer may also be disposed directly on the diffusion layer 11 and the antireflection layer 40, and details thereof are not repeated here.
In summary, the solar cell 100 of the present application forms an effective passivation on the surface of the semiconductor substrate 10 through the tunneling layer 20 and the doped polysilicon layer 30. The first part 31 is thick and has high doping concentration, so that the recombination loss and the contact resistance of the metal electrode 50 area can be effectively reduced; the second portion 32 has a smaller thickness and a lower doping concentration, and reduces the absorption of light while passivating the non-electrode region of the semiconductor substrate 10, thereby facilitating the improvement of the conversion efficiency of the solar cell 100.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above list of details is only for the concrete description of the feasible embodiments of the present application, they are not intended to limit the scope of the present application, and all equivalent embodiments or modifications that do not depart from the technical spirit of the present application are intended to be included within the scope of the present application.
Claims (9)
1. A solar cell, comprising a semiconductor substrate and a metal electrode, characterized in that: the solar cell further comprises a tunneling layer and a doped polycrystalline silicon layer which are sequentially stacked on the surface of one side of the semiconductor substrate, the doped polycrystalline silicon layer is provided with a first part and a second part, the metal electrode is in contact with the first part, the thickness of the first part is larger than that of the second part, and the doping concentration of the first part is larger than that of the second part.
2. The solar cell of claim 1, wherein: the thickness of the first part is set to be 80-300 nm, and the thickness of the second part is set to be 10-80 nm.
3. The solar cell of claim 1, wherein: the tunneling layer is a silicon oxide film or a silicon oxynitride film or a composite film formed by mutually laminating the silicon oxide film and the silicon oxynitride film, and the thickness of the tunneling layer is set to be 0.5-3 nm.
4. The solar cell of claim 1, wherein: the solar cell further comprises an antireflection layer arranged on the surface of the doped polycrystalline silicon layer on the side away from the semiconductor substrate, and the metal electrode penetrates through the antireflection layer and is in contact with the first part.
5. The solar cell of claim 4, wherein: the antireflection layer comprises a first antireflection film layer, a second antireflection film layer stacked on the first antireflection film layer and deviating from the first antireflection film layer on the surface of one side of the semiconductor substrate, the thickness of the first antireflection film layer is smaller than that of the second antireflection film layer, and the refractive index of the first antireflection film layer is larger than that of the second antireflection film layer.
6. The solar cell of claim 1, wherein: the tunneling layer and the doped polycrystalline silicon layer are sequentially stacked on the front surface of the semiconductor substrate; the solar cell further includes a back passivation layer formed on the back surface of the semiconductor substrate, and a back electrode penetrating the back passivation layer and contacting the semiconductor substrate.
7. The solar cell of claim 6, wherein: the semiconductor substrate is a P-type silicon wafer; the back passivation layer is set to be Al2O3Film layer of said Al2O3Of a film layerThe thickness is set to be 3-20 nm.
8. The solar cell of claim 1, wherein: the solar cell is a double-sided cell, and a back tunneling layer, a back doped polycrystalline silicon layer and a back antireflection layer are sequentially stacked on the back of the solar cell.
9. The solar cell of claim 8, wherein: the back side doped polycrystalline silicon layer is provided with a third part and a fourth part, the thickness of the third part is greater than that of the fourth part, and the doping concentration of the third part is greater than that of the fourth part; the solar cell further includes a back electrode penetrating the back anti-reflective layer and contacting the third portion.
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| JP7445053B1 (en) | 2023-02-08 | 2024-03-06 | ジョジアン ジンコ ソーラー カンパニー リミテッド | Solar cells and their manufacturing methods, photovoltaic modules |
| CN115985981A (en) * | 2023-02-22 | 2023-04-18 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN117317041A (en) * | 2023-11-29 | 2023-12-29 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
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