CN105826408B - Local back surface field N-type solar cell and preparation method and component, system - Google Patents
Local back surface field N-type solar cell and preparation method and component, system Download PDFInfo
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- CN105826408B CN105826408B CN201610263462.1A CN201610263462A CN105826408B CN 105826408 B CN105826408 B CN 105826408B CN 201610263462 A CN201610263462 A CN 201610263462A CN 105826408 B CN105826408 B CN 105826408B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 51
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 90
- 239000011159 matrix material Substances 0.000 claims abstract description 84
- 239000000243 solution Substances 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002253 acid Substances 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000012670 alkaline solution Substances 0.000 claims abstract description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- 239000002002 slurry Substances 0.000 claims abstract description 10
- 238000007654 immersion Methods 0.000 claims abstract description 4
- 230000011218 segmentation Effects 0.000 claims description 42
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 22
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000006071 cream Substances 0.000 claims description 14
- 238000005245 sintering Methods 0.000 claims description 13
- 229910052681 coesite Inorganic materials 0.000 claims description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 229910052682 stishovite Inorganic materials 0.000 claims description 12
- 229910052905 tridymite Inorganic materials 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910004205 SiNX Inorganic materials 0.000 claims description 7
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910000989 Alclad Inorganic materials 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000005297 pyrex Substances 0.000 claims description 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 2
- 229910001074 Lay pewter Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 230000035484 reaction time Effects 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- OLXNZDBHNLWCNK-UHFFFAOYSA-N [Pb].[Sn].[Ag] Chemical compound [Pb].[Sn].[Ag] OLXNZDBHNLWCNK-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 8
- 239000003513 alkali Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910000521 B alloy Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 238000003854 Surface Print Methods 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000008199 coating composition Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of local back surface field N-type solar cell and preparation method and component, system.The preparation method of the local back surface field N-type solar cell of the present invention, comprises the following steps：Front and rear surfaces to N-type crystalline silicon matrix are doped respectively, then grow barrier layer in silicon substrate front and rear surfaces, then print the mask that acidproof slurry forms secondary palisade pattern in its back surface；It is then immersed in the barrier layer for being removed in acid solution and not being covered by the mask region；Mask is removed in immersion alkaline solution, and etches other regions and retains n+ heavily doped regions below mask；It is again dipped into acid solution and removes the remaining barrier layer of silicon substrate front and rear surfaces.Its advantage is：Because the secondary grid in the back side are only contacted with local n+ heavily doped regions, so contact resistance is low；Other regions are undoped region, so auger recombination is low；Positive secondary grid are formed by setting wire, the silver paste consumption of battery are significantly reduced, so as to reduce the cost of manufacture of cell piece.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of local back surface field N-type solar cell and
Preparation method and component, system.
Background technology
Solar cell is a kind of semiconductor devices that can be converted solar energy into electrical energy.At present, the main product of industry
For p-type crystal silicon solar batteries.The battery process is simple, but the efficiency with photo attenuation effect, i.e. battery can with when
Between increase and gradually decay, this mainly due to incorporation P-type silicon substrate in boron atom be combined with the oxygen atom in substrate
Produce the result of boron oxygen pair.Research shows that boron oxygen reduces minority carrier lifetime to playing carrier traps effect, so that
It result in the decay of cell photoelectric conversion efficiency.Relative to p-type crystal silicon battery, N-type crystal silicon battery has that photo attenuation is small, resistance to gold
Belong to impurity pollutant performance it is good, the advantages of minority carrierdiffusion length is long, it is and positive and negative due to N-type crystalline silicon solar cell
Electrode can be fabricated to conventional H type gate line electrode structures, therefore not only front can absorb light to the battery, its back surface
Reflection and scattered light can be absorbed to produce extra electric power.
Common N-type crystalline silicon solar cell is p+/n/n+ structures, and wherein battery front surface adulterates for p+ types, carries on the back table
Adulterated for n+ types in face.In order to reduce the contact resistance between backplate and n+ doped regions, it is desirable that n+ layers are heavy doping.
In order to improve the open-circuit voltage and short circuit current flow of battery, it would be desirable to reduce heavy doping and bring high auger recombination, at this moment n is wished again
+ layer is to be lightly doped.Prior art can not solve the fill factor, curve factor and open-circuit voltage brought by back surface n+ type doped layers well
Contradiction between short circuit current flow.In addition, the p+ doped regions of front surface mix aluminum paste typically using aluminum paste making electrode is mixed
Price is general costly, and this causes the accounting containing silver paste in battery manufacture cost to remain high.
The content of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of local back surface field N-type solar cell
And preparation method and component, system.What local back surface field N-type solar cell that the present invention is provided and preparation method thereof was obtained
Local back surface field N-type solar cell can preferably solve the fill factor, curve factor and open circuit brought by back surface n+ type doped layers
Contradiction between voltage short circuit current flow.Positive secondary grid are formed by setting wire, are ensureing the secondary grid line resistance of wire not
In the case of increased, the silver paste consumption of battery is significantly reduced, so as to reduce the cost of manufacture of cell piece.
A kind of preparation method for local back surface field N-type solar cell that the present invention is provided, its technical scheme is：
A kind of preparation method of local back surface field N-type solar cell, comprises the following steps：
(1) processing, is doped to N-type crystalline silicon matrix, then in the front surface and back surface system of N-type crystalline silicon matrix
Standby barrier layer, the thickness of backside barrier layer is less than the thickness of frontside barrier layers；
(2), the back surface of the N-type crystalline silicon matrix after step (1) processing prints acidproof slurry and dries to form secondary grid
The mask of shape pattern；
(3), the N-type crystalline silicon matrix after step (2) processing is immersed to remove in acid solution and is not covered by the mask region
Backside barrier layer, but positive barrier layer requires not removed by acid solution, but thickness can accordingly be thinned；
(4), the N-type crystalline silicon matrix after step (3) processing is immersed in alkaline solution and removes mask, alkaline solution is simultaneously
The n+ heavily doped regions not being covered by the mask are removed, retain the n+ heavily doped regions being covered by the mask, so as to form local n+ weights
The back surface of doping；
(5), N-type crystalline silicon matrix is immersed in acid solution again and removes front surface and the remaining barrier layer of back surface；
(6), the front surface of the N-type crystalline silicon matrix after step (5) processing prepares passivated reflection reducing membrane and in back surface system
Standby passivating film, then uses metal paste printed back electrode, the back side pair of backplate in the back surface of N-type crystalline silicon matrix
Grid are connected with part n+ heavily doped regions；Prepared and the p+ doped regions using wire in the front surface of N-type crystalline silicon matrix
The preparation of local back surface N-type solar cell is completed after the front electrode of domain Ohmic contact, sintering.
Wherein, in step (6), preparing the method for front electrode is：The wire of mixing aluminum paste will be attached and be attached to N-type
After the front surface of crystal silicon substrate, drying, sintering, wire and p+ doped regions formation Ohmic contact.
Wherein, in step (6), preparing the method for front electrode is：It is silver-colored using aluminium is mixed in the front surface of N-type crystalline silicon matrix
The secondary grid of slurry printing segmentation；Then the secondary grid of segmentation, wire and p+ doped regions after wire, sintering are laid on the secondary grid of segmentation
Ohmic contact is formed between three.
Wherein, in step (6), preparing the method for front electrode is：It is silver-colored using aluminium is mixed in the front surface of N-type crystalline silicon matrix
The secondary grid of slurry printing segmentation, are then sintered；Printing thermal is led on the secondary grid of the segmentation of N-type crystalline silicon matrix after sintering
Electric layer；Then laying is coated with the wire of sensitive Conductive Materials on thermo-sensitive conductive layer, and sensitive Conductive Materials are coated with by laying
The N-type crystalline silicon matrix of wire heated so that the wire, thermo-sensitive conductive layer, p+ for being coated with sensitive Conductive Materials are mixed
Ohmic contact is formed between miscellaneous region and the secondary grid of segmentation.
Wherein, the thermo-sensitive conductive layer is tin cream conductive layer, and the wire for being coated with sensitive Conductive Materials is tin copper-clad
Any of silk, silver-colored coppered wire, tin alclad silk or tin Baogang silk；The tin cream contains tin, leypewter, sn-bi alloy or tin
Any of pb-ag alloy.
Wherein, it is the reflow peak of heating by the way of infrared heating to the mode that N-type crystalline silicon matrix is heated
Temperature is 183-250 degrees Celsius.
Wherein, the method that N-type crystalline silicon matrix is doped processing is comprised the following steps in step (1)：
S1, selection N-type crystalline silicon matrix, and making herbs into wool processing is made to the preceding surface of N-type crystalline silicon matrix；N-type crystalline silicon base
The resistivity of body is 0.5~15 Ω cm；
S2, by step S1 processing after N-type crystalline silicon matrix be put into industrial diffusion furnace to making herbs into wool face carry out boron diffusion
The p+ doped regions of front surface are formed, boron source uses Boron tribromide, and diffusion temperature is 900-1000 DEG C, and the time is 60-180 points
Clock；Sheet resistance value after boron diffusion is 40-100 Ω/sqr；
S3, boron is spread after N-type crystalline silicon matrix be put into etching cleaning machine, remove the diffused layer of boron and just of back surface
The Pyrex layer on surface；
S4, injected and phosphorus and annealed using N-type crystalline silicon matrix back surface of the ion implantation apparatus after step S3 processing
Processing forms the n+ heavily doped regions of back surface, and the sheet resistance value of n+ heavily doped regions is 10-40 Ω/sqr；The peak temperature of annealing
For 700~950 DEG C, annealing time is 30~200min, and environment source of the gas is N2And O2。
Wherein, the barrier layer is SiO2Layer or SiNxLayer, the thickness of frontside barrier layers is 200-300nm, backside barrier layer
Thickness is 50-100nm.
Wherein, in step (2) mask of secondary palisade pattern a width of 20-100um, parallel to each other, spacing is 1-2mm.
Wherein, the acid solution in step (3) is in 5-20% HF solution, N-type crystalline silicon matrix immerses 5-20%HF
Time in solution is 0.5-5 minutes, is cleaned after taking out N-type crystalline silicon matrix with deionized water.
Wherein, the alkaline solution in step (4) be 10~30% KOH solution, 10~30% NaOH solution, 10
~30% tetramethyl ammonium hydroxide solution or 10~30% ethylenediamine solution；The temperature of alkaline solution is 50-90 DEG C, N
Reaction time in type crystal silicon substrate immersion alkaline solution is 0.5-5 minutes, and deionized water is used after taking out N-type crystalline silicon matrix
Cleaning.
Wherein, during the acid solution in step (5) is 5-20% HF solution, N-type crystalline silicon matrix immerses 5-20%HF
Time in solution is 2-5 minutes, is cleaned after taking out N-type crystalline silicon matrix with deionized water.
Wherein, in step (6), the method for preparing backplate in the back surface of N-type crystalline silicon matrix is：In N-type crystal
The back surface of silicon substrate prints the backplate of H type grid lines using silver paste and dried, the wherein wide 0.5-3mm of back side main grid,
Spaced set 3-6 roots, back side pair grid width 20-100um.
Present invention also offers a kind of local back surface field N-type solar cell, including N-type crystalline silicon matrix, the N-type
The front surface of crystal silicon substrate includes p+ doped regions and front surface passivated reflection reducing membrane successively from inside to outside；The N-type crystal
The back surface of silicon substrate includes local n+ heavily doped regions and back surface passivation film successively from inside to outside；The N-type crystalline silicon
Matrix also includes the backplate for being arranged on back surface, and the backplate includes the secondary grid of back side main grid and the back side, the back side
Secondary grid are connected with the local n+ heavily doped regions, and the front electrode includes the metal with the p+ doped regions Ohmic contact
Silk.
Wherein, the wire is electrically connected by aerdentalloy material with the p+ doped regions.
Wherein, the front electrode includes the secondary grid of segmentation, and the wire is by being segmented secondary grid and the p+ doped regions
Electrical connection.
Wherein, the front electrode includes the secondary grid of segmentation and is arranged on thermo-sensitive conductive layer on the secondary grid of segmentation, and the segmentation is secondary
Grid are electrically connected with the p+ doped regions；The wire is electrically connected with thermo-sensitive conductive layer.
Wherein, the secondary grid of the segmentation are the secondary grid of aerdentalloy segmentation；The thermo-sensitive conductive layer is tin cream conductive layer, the gold
It is the wire for being coated with sensitive Conductive Materials to belong to silk.
Present invention also offers a kind of local back surface field N-type solar cell module, including from top to bottom set gradually
Preceding layer material, encapsulating material, local back surface field N-type solar cell, encapsulating material, backsheet, the local back table
Face field N-type solar cell is a kind of above-mentioned local back surface field N-type solar cell.
Present invention also offers a kind of local back surface field N-type solar cell system, include the office of more than one series connection
Portion's back surface field N-type solar cell module, the local back surface field N-type solar cell module is that above-mentioned one kind is local
Back surface field N-type solar cell module.
The implementation of the present invention includes following technique effect：
The present invention's has the technical effect that：1st, the present invention is by setting barrier layer, acidproof slurry mask, acid solution rotten
After the sequence of operations processing such as erosion and alkali liquid corrosion, local n+ heavily doped regions can be formed at the back side of N-type crystalline silicon, subsequently
During metallization, secondary grid metal slurry only contacts local n+ heavily doped regions.Because secondary grid are only contacted with local n+ heavily doped regions,
So contact resistance is low, fill factor, curve factor is high；Meanwhile, the region of the secondary grid contact of discord is undoped region, thus auger recombination it is low,
Open-circuit voltage is high.And use prior art, if the back side local n+ doping doped layer be heavy doping, although contact resistance it is low but
It is that open-circuit voltage is also low；If the n+ doped regions at the back side are to be lightly doped, although open-circuit voltage is high but contact resistance height is filled
Factor difference.As can be seen here, the n-type solar cell prepared according to the method described above can overcome the open-circuit voltage that prior art is present
With the contradiction of fill factor, curve factor, so with higher photoelectric transformation efficiency.2nd, the metallization of front surface p+ doped regions is given up often
The method that aluminum paste makes main grid and secondary grid is mixed in the printing of rule, and secondary grid are formed by setting wire, is ensureing wire pair
In the case of grid line resistance is not increased, the silver paste consumption of battery is significantly reduced, so as to reduce the cost of manufacture of cell piece.
Brief description of the drawings
After preparation method steps one of the Fig. 1 for a kind of local back surface field N-type solar cell of the embodiment of the present invention
Battery structure schematic cross-section.
After preparation method step 4 of the Fig. 2 for a kind of local back surface field N-type solar cell of the embodiment of the present invention
Battery structure schematic cross-section.
After preparation method step 5 of the Fig. 3 for a kind of local back surface field N-type solar cell of the embodiment of the present invention
Battery structure schematic cross-section.
After preparation method step 6 of the Fig. 4 for a kind of local back surface field N-type solar cell of the embodiment of the present invention
Battery structure schematic cross-section.
After preparation method step 7 of the Fig. 5 for a kind of local back surface field N-type solar cell of the embodiment of the present invention
Battery structure schematic cross-section.
After preparation method step 8 of the Fig. 6 for a kind of local back surface field N-type solar cell of the embodiment of the present invention
Battery structure schematic cross-section.
After preparation method step 9 of the Fig. 7 for a kind of local back surface field N-type solar cell of the embodiment of the present invention
Battery structure schematic cross-section.
After preparation method step 10 of the Fig. 8 for a kind of local back surface field N-type solar cell of the embodiment of the present invention
Battery structure schematic cross-section.
After preparation method step 11 of the Fig. 9 for a kind of local back surface field N-type solar cell of the embodiment of the present invention
Battery structure schematic cross-section.
Figure 10 is a kind of preparation method step 12 of local back surface field N-type solar cell of the embodiment of the present invention 1
(a) the wire schematic diagram for being stained with silver paste after.
Figure 11 is a kind of preparation method step 12 of local back surface field N-type solar cell of the embodiment of the present invention 1
(b) the battery structure schematic cross-section after.
Figure 12 is a kind of preparation method step 12 of local back surface field N-type solar cell of the embodiment of the present invention 2
(a) the battery structure schematic cross-section after.
Figure 13 is a kind of preparation method step 12 of local back surface field N-type solar cell of the embodiment of the present invention 2
(b) the battery structure schematic cross-section after.
Figure 14 is a kind of preparation method step 12 of local back surface field N-type solar cell of the embodiment of the present invention 3
(a) the battery structure schematic cross-section after.
Figure 15 is a kind of preparation method step 12 of local back surface field N-type solar cell of the embodiment of the present invention 3
(b) the battery structure schematic cross-section after.
Figure 16 is a kind of preparation method step 12 of local back surface field N-type solar cell of the embodiment of the present invention 3
(c) the battery structure schematic cross-section after.
Figure 17 is a kind of preparation method of local back surface field N-type solar cell of the embodiment of the present invention 2 and embodiment 3
Discrete secondary grid schematic diagram of linear segmentation in step 12.
Figure 18 is a kind of preparation method of local back surface field N-type solar cell of the embodiment of the present invention 2 and embodiment 3
Discrete secondary grid schematic diagram of round point shape segmentation in step 12.
Figure 19 is a kind of preparation method of local back surface field N-type solar cell of the embodiment of the present invention 2 and embodiment 3
The secondary grid schematic diagram of discrete round point shape segmentation of Heterogeneous Permutation in step 12.
Embodiment
The present invention is described in detail below in conjunction with embodiment and accompanying drawing, it should be pointed out that described reality
Apply example and be intended merely to facilitate the understanding of the present invention, and do not play any restriction effect to it.
Embodiment 1
Referring to shown in Fig. 1 to Figure 11, a kind of preparation side for local back surface field N-type solar cell that the present embodiment is provided
Method, comprises the following steps：
(1) 156mm × 156mm N-type crystalline silicon matrix 10, is selected, and to the preceding surface system of N-type crystalline silicon matrix 10
Suede processing；The resistivity of N-type crystalline silicon matrix 10 is 0.5~15 Ω cm, preferably 1~5 Ω cm；N-type crystalline silicon matrix 10
Thickness be 50~300 μm, preferably 80~200 μm；Complete the battery structure after this step as shown in Figure 1.
(2), the N-type crystalline silicon matrix 10 after step (1) processing is put into industrial diffusion furnace boron is carried out to making herbs into wool face
The p+ doped regions 12 of front surface are diffuseed to form, boron source uses Boron tribromide, and diffusion temperature is 900-1000 DEG C, and the time is 60-
180 minutes.Sheet resistance value after boron diffusion is 40-100 Ω/sqr, preferably 50-70 Ω/sqr.
(3) the N-type crystalline silicon matrix 10 after, boron is spread is put into etching cleaning machine, removes the diffused layer of boron of back surface
With the Pyrex layer of front surface.
(4), inject phosphorus using N-type crystalline silicon matrix 10 back surface of the ion implantation apparatus after step (3) processing and carry out
Annealing forms the n+ heavily doped regions 16 of back surface, and the sheet resistance of n+ heavily doped regions 16 is 10-40 Ω/sqr.The peak of annealing
It is 700~950 DEG C to be worth temperature, and preferably 850~900 DEG C, annealing time is 30~200min, preferably 60~200min, ring
Border source of the gas is preferably N2And O2.Complete the battery structure after this step as shown in Figure 2.
(5), barrier layer is grown on the front surface of N-type crystalline silicon matrix 10 and back surface after step (4) processing.Barrier layer
Can be SiO2Layer or SiNxLayer, the present embodiment uses SiO2Layer is used as specific example.Specific method is, by N-type crystalline silicon base
Body 10 is put into PECVD (plasma enhanced chemical vapor deposition) equipment, is 200-300nm's in front surface growth thickness
SiO2Layer 13, in the SiO that back surface growth thickness is 50-100nm2Layer 17.Complete the battery structure after this step as shown in Figure 3.
(6), the back surface of the N-type crystalline silicon matrix 10 after step (5) processing prints acidproof slurry 40 and dried to be formed
Mask.Its pattern excessively after ink is secondary grid line structure, secondary grid line line width 50-200um, long 154mm, and parallel to each other, spacing is 1-
2mm, preferably 1.55mm, set 100 altogether.Complete the battery structure after this step as shown in Figure 4.
(7), the N-type crystalline silicon matrix 10 after step (6) processing is immersed in 5-20%HF solution, taken after 0.5-5 minutes
Go out and cleaned up with deionized water.Now back surface is not covered by the mask the SiO in region2Removed totally by HF, and front surface is still
There is most of SiO2It is not removed.Complete the battery structure after this step as shown in Figure 5.
(8), the N-type crystalline silicon matrix 10 after step (7) processing is immersed in the alkali lye of 10~30% percentage by weights, work
Make temperature for 50-90 DEG C, reaction taking-up in 0.5-5 minutes is cleaned up with deionized water.Now back surface is not covered by the mask area
Domain is because without SiO2Protection will be reacted with alkali lye, the n+ heavily doped regions in these regions are removed.Simultaneously remaining
Mask will also be removed totally by alkali lye.And the region being covered by the mask is then part n+ heavily doped regions 161；Note in this step
In, the p+ doped regions 12 of front surface and the secondary palisade part n+ heavily doped regions 161 of back surface are because surface is covered with SiO2
Film, can't react with alkali lye.Alkali lye can be KOH, NaOH, TMAH or ethylenediamine solution.Complete this
Battery structure after step is as shown in Figure 6.
(9), the N-type crystalline silicon matrix 10 after step (8) processing is immersed in 5-20%HF solution, taken out after 2-5 minutes
Cleaned up with deionized water.The now remaining SiO of front surface and back surface2Layer is removed clean.Complete after this step
Battery structure is as shown in Figure 7.
(10), the front surface and back surface of the N-type crystalline silicon matrix 10 after step (9) processing set passivated reflection reducing membrane 14
And passivating film 18, the passivated reflection reducing membrane 14 of wherein front surface is SiO2、SiNxAnd Al2O3It is one or more in deielectric-coating, back surface
Passivating film 18 be SiO2And SiNxThe composite dielectric film of deielectric-coating composition.The thickness of front surface passivated reflection reducing membrane 14 be 70~
110nm；The thickness of back surface passivation film 18 is to be not less than 20nm.Complete the battery structure after this step as shown in Figure 8.
(11), print electrode and dried using silver paste in the back surface of N-type crystalline silicon matrix 10, its electrode pattern is
H type grid lines, wherein back side main grid 22 line width 0.5-3mm, long 154mm, spaced set 3-6 roots, back side pair grid 28 line width 20-
100um, long 154mm, parallel to each other, spacing is 1.55mm, and 100 are set altogether.Must fall the secondary grid 28 in the back side after printing
In local n+ heavily doped regions 161.Complete the battery structure after this step as shown in Figure 9.
(12) metallization of the front surface of N-type crystalline silicon matrix 10, is completed, its process includes following several steps：
(a) as shown in Figure 10, the aluminum paste 24 of mixing that Ohmic contact can be formed with p+ doped regions 12 is sticked into metal
The side of silk 26, sticks to mixing aluminum paste 24 and can be attached on the metal filament with discontinuous on wire 26, can also be continuous
Ground is attached on the metal filament；The cross sectional shape of wire 26 can be circle, its a diameter of 40-80um；The section of wire 26
Shape can also be square or triangle.Wire 26 can be copper wire, silver-colored coppered wire or other B alloy wires.
(b), as shown in figure 11, a plurality of attach is mixed the wire 26 of aluminum paste 24 equidistantly the parallel N-type that is attached to is brilliant
Spacing between the front surface of body silicon substrate 10 and drying, wire 26 is 1-3mm；
(c), the N-type crystalline silicon matrix 10 after step (b) is placed in sintering furnace and sintered, the peak temperature of sintering is not higher than
900℃.So far, the preparation of part n+ N-type cell is completed.
Embodiment 2
Referring to shown in Fig. 1 to Fig. 9, Figure 12 and Figure 13 and Figure 17 to Figure 19, a kind of local back surface field N in the present embodiment
The preparation method of type solar cell, comprises the following steps：
Step (1)~(11) are same as Example 1, and here is omitted.
(12) metallization of the front surface of N-type crystalline silicon matrix 10, is completed, its process includes following several steps：
(a) as shown in figure 12, using with the formation of p+ doped regions 12 Ohmic contact aluminum paste can be mixed in N-type crystalline silicon
The secondary grid 27 of front surface printing segmentation of matrix 10.The length of the secondary grid 27 of segmentation is less than or equal to the length of side of cell piece, the present embodiment
For 154mm, preferably segmented secondary grid are parallel to each other.The secondary grid 27 of segmentation can be made up of discrete lines, the long 30- of every section of lines
It is 300 microns, wide 30-300 microns.In the present embodiment, the secondary grid 27 of segmentation are made up of discrete round dot, a diameter of 30-300 of round dot
Micron.The pattern form that secondary grid 27 are segmented in the present embodiment can be for discrete round dot (such as Figure 18), discrete lines (such as
Figure 17) or Heterogeneous Permutation discrete round dot (such as Figure 19).
(b), as shown in figure 13, lay wire 26 correspondingly on the secondary grid 27 of segmentation and form continuous secondary grid line.
The section of wire 26 can be circle, its a diameter of 40-80um；The cross sectional shape of wire 26 can also square or triangle
Shape.Wire 26 can be copper wire, silver-colored coppered wire or other B alloy wires, and length is 154mm, a diameter of 40-80 microns.Laying
Shi Wubi makes to mix aluminum paste layer on the secondary grid 27 of the contact segmentation of wire 26.
(c), the N-type crystalline silicon matrix 10 after step (b) is placed in sintering furnace and sintered, the temperature of sintering is not higher than 900
℃.So far, the preparation of part n+ N-type cell is completed.
Embodiment 3
Referring to shown in Fig. 1 to Fig. 9, Figure 14 to Figure 16 and Figure 17 to Figure 19, a kind of local back surface field N in the present embodiment
The preparation method of type solar cell, comprises the following steps：
Step (1)~(11) are same as Example 1, and here is omitted.
(12) metallization of the front surface of N-type crystalline silicon matrix 10, is completed, its process includes following several steps：
(a) as shown in figure 14, using with the formation of p+ doped regions 12 Ohmic contact aluminum paste can be mixed in N-type crystalline silicon
The secondary grid 27 of front surface printing segmentation of matrix 10 are simultaneously sintered.The length of the secondary grid 27 of segmentation is less than or equal to the side of cell piece
Long, the present embodiment is 154mm, and preferably segmented secondary grid are parallel to each other.The secondary grid 27 of segmentation can be made up of discrete lines, every section
Lines are long 30-300 microns, wide 30-300 microns.The secondary grid 27 of segmentation can also be made up of discrete round dot, round dot diameter
30-300 microns.The temperature of sintering is not higher than 900 DEG C.It can be discrete that the pattern form of secondary grid 27 is segmented in the present embodiment
Discrete round dot (such as Figure 19) of round dot (such as Figure 18), discrete lines (such as Figure 17) or Heterogeneous Permutation.
(b) the N-type crystalline silicon matrix 10 after step (a) processing, as shown in figure 15, is placed in printing machine, printed using tin cream
Brush tin cream conductive layer 29.The excessively black pattern of tin cream conductive layer 29 can be discrete lines, and every section of lines are long 40-300 microns,
It is wide 40-300 microns.The excessively black pattern of tin cream conductive layer 29 can also be discrete round dot, 40-300 microns of round dot diameter.
When printing tin cream conductive layer 29 after ink must be located on the secondary grid 27 of segmentation.
(c), as shown in figure 16, lay wire 26 correspondingly on tin cream conductive layer 29 and form continuous secondary grid
Line.The section of wire 26 can be circle, its a diameter of 40-80um；The cross sectional shape of wire 26 can also be square or three
It is angular.Wire 26 can be copper wire, silver-colored coppered wire or other B alloy wires, and length is 154mm, a diameter of 40-80 microns.Paving
If when wire 26 must be made to contact tin cream conductive layer 29.
(d), the N-type crystalline silicon matrix 10 after step (c) is heated so that wire 26, the and of tin cream conductive layer 29
The secondary three of grid 27 of segmentation forms Ohmic contact.Mode of heating uses infrared heating, and reflow peak temperature is 183-250 degree.So far,
Complete the preparation of part n+ N-type cell.
The present embodiment is by setting at the sequence of operations such as barrier layer, acidproof slurry mask, acid liquid corrosion and alkali liquid corrosion
After reason, local n+ heavily doped regions can be formed at the back side of N-type crystalline silicon, during subsequent metallisation, secondary grid metal slurry only connects
Touch part n+ heavily doped regions.Because secondary grid are only contacted with local n+ heavily doped regions, so contact resistance is low, fill factor, curve factor
It is high；Meanwhile, the region of the secondary grid contact of discord is undoped region, so auger recombination is low, open-circuit voltage is high.And use existing skill
Art, if the local n+ doped regions at the back side are heavy doping, although contact resistance is low but open-circuit voltage is also low；If the back side
N+ doped regions are to be lightly doped, although open-circuit voltage is high but contact resistance high fill factor is poor.As can be seen here, according to above-mentioned side
N-type solar cell prepared by method can overcome the open-circuit voltage of prior art presence and the contradiction of fill factor, curve factor, so have
Higher photoelectric transformation efficiency.2nd, the metallization of front surface p+ doped regions give up conventional printing mix aluminum paste make main grid and
The method of secondary grid, forms secondary grid by setting wire, in the case of ensureing that the secondary grid line resistance of wire is not increased, greatly
Reduction battery silver paste consumption, so as to reduce the cost of manufacture of cell piece.
Referring to shown in Fig. 9~Figure 19, the present embodiment additionally provides a kind of local back surface field N-type solar cell, including N
Type crystal silicon substrate 10, the front surface of N-type crystalline silicon matrix 10 includes p+ doped regions 12 and front surface successively from inside to outside
Passivated reflection reducing membrane 14；The back surface of N-type crystalline silicon matrix 10 includes local n+ heavily doped regions 161 and the back of the body successively from inside to outside
Surface passivated membrane 18；N-type crystalline silicon matrix 10 also includes the backplate for being arranged on back surface, and backplate includes back side main grid
22 and the secondary grid 28 in the back side, back side pair grid 28 are connected with part n+ heavily doped regions 161, front electrode including and p+ doped regions 12
The wire 26 of Ohmic contact.Above-mentioned local back surface field N-type solar cell, because the secondary grid in the back side are heavily doped only with local n+
Miscellaneous region 161 is contacted, so contact resistance is low, fill factor, curve factor is high；Meanwhile, the region of the secondary grid contact in the discord back side is undoped region
Domain, so auger recombination is low, open-circuit voltage is high.And prior art is used, if the local n+ doped regions at the back side are heavy doping,
Although contact resistance is low but open-circuit voltage is also low；If the n+ doped regions at the back side is are lightly doped, although open-circuit voltage it is high but
It is that contact resistance high fill factor is poor.As can be seen here, the N-type solar cell of the present embodiment can overcome what prior art was present
The contradiction of open-circuit voltage and fill factor, curve factor, so with higher photoelectric transformation efficiency.The metallization of front surface p+ doped regions
Give up conventional printing and mix the method that aluminum paste makes main grid and secondary grid, secondary grid are formed by setting wire, in guarantee fund
In the case of the secondary grid line resistance of category silk is not increased, the silver paste consumption of battery is significantly reduced, so as to reduce being fabricated to for cell piece
This.
In the present embodiment, the connected mode of wire and p+ doped regions is mixed for wire by aerdentalloy material with p+
Miscellaneous region 12 is electrically connected；Or front electrode includes the secondary grid 27 of segmentation, wire is by being segmented secondary grid 27 and p+ doped regions 12
Electrical connection；Or front electrode includes the secondary grid 27 of segmentation and is arranged on thermo-sensitive conductive layer on the secondary grid 27 of segmentation, the secondary grid of segmentation and p+
Doped region 12 is electrically connected；Wire 26 is electrically connected with thermo-sensitive conductive layer.The secondary grid 27 of segmentation are the secondary grid of aerdentalloy segmentation；Temperature-sensitive
Conductive layer is tin cream conductive layer 29, and wire is the wire for being coated with sensitive Conductive Materials.The secondary grid 27 of segmentation can be by discontinuous
Lines composition, every section of lines are long 30-300 microns, wide 30-300 microns.The secondary grid of segmentation can be by discrete round dot group
Into round dot is a diameter of 30-300 microns.The pattern form of the secondary grid of segmentation can be discrete round dot (such as Figure 18), discrete
Discrete round dot (such as Figure 19) of lines (such as Figure 17) or Heterogeneous Permutation.Wire is copper wire, tin coppered wire, silver-colored copper-clad
One kind in silk, tin alclad silk or tin Baogang silk.Passivated reflection reducing membrane 14 is SiO2、SiNxOr Al2O3It is a kind of or many in deielectric-coating
Kind, passivating film 18 is SiO2And SiNxThe composite dielectric film of deielectric-coating composition；The thickness of passivated reflection reducing membrane 14 is 70~110nm；It is blunt
Change the thickness of film 18 to be not less than 20nm.Back side main grid 22 is silver-colored back side main grid, and back side pair grid 28 are the secondary grid in the silver-colored back side.
The present embodiment additionally provides a kind of local back surface field N-type solar cell module, including from top to bottom connect
Preceding layer material, encapsulating material, local back surface field N-type solar cell, encapsulating material, backsheet, local back surface field N-type
Solar cell is a kind of above-mentioned local back surface field N-type solar cell.The local back surface field N-type sun of the present embodiment
The structure and working principle of energy battery component uses technology well known in the art, and the local back surface field N-type that the present invention is provided
The improvement of solar cell module only relates to above-mentioned local back surface field N-type solar cell, other parts is not changed
It is dynamic.Therefore this specification is only described in detail to local back surface field N-type solar cell and preparation method thereof, to local back surface field
The miscellaneous part and operation principle of N-type solar cell module are repeated no more here.Those skilled in the art retouch in this specification
In the content basis stated, you can realize the local back surface field N-type solar cell module of the present invention.
The present embodiment additionally provides a kind of local back surface field N-type solar cell system, including one or more than one
The local back surface field N-type solar cell module of series connection, local back surface field N-type solar cell module is above-mentioned one kind
Local back surface field N-type solar cell module.The structure of the local back surface field N-type solar cell system of the present embodiment and
Operation principle uses technology well known in the art, and the local back surface field N-type solar cell system that the present invention is provided changes
Enter and only relate to above-mentioned local back surface field N-type solar cell, other parts are not modified.Therefore this specification is only played a game
Portion's back surface field N-type solar cell and preparation method thereof is described in detail, to local back surface field N-type solar cell system
Miscellaneous part and operation principle are repeated no more here.Those skilled in the art are in the content basis that this specification is described, you can
Realize the local back surface field N-type solar cell system of the present invention.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than to present invention guarantor
The limitation of scope is protected, although being explained with reference to preferred embodiment to the present invention, one of ordinary skill in the art should
Work as understanding, technical scheme can be modified or equivalent substitution, without departing from the reality of technical solution of the present invention
Matter and scope.
Claims (13)
1. a kind of preparation method of local back surface field N-type solar cell, it is characterised in that：Comprise the following steps：
(1) processing, is doped to N-type crystalline silicon matrix, then resistance is prepared in the front surface and back surface of N-type crystalline silicon matrix
Barrier, the thickness of backside barrier layer is less than the thickness of frontside barrier layers；
(2), the back surface of the N-type crystalline silicon matrix after step (1) processing prints acidproof slurry and dries to form secondary panel map
The mask of case；
(3), the N-type crystalline silicon matrix after step (2) processing is immersed the back of the body for not being covered by the mask region is removed in acid solution
Face barrier layer, but positive barrier layer requires not removed by acid solution, and but thickness can accordingly be thinned；
(4), the N-type crystalline silicon matrix after step (3) processing is immersed in alkaline solution and removes mask, alkaline solution is removed simultaneously
The n+ heavily doped regions not being covered by the mask, retain the n+ heavily doped regions being covered by the mask, so as to form local n+ heavy doping
Back surface；
(5), N-type crystalline silicon matrix is immersed in acid solution again and removes front surface and the remaining barrier layer of back surface；
(6), the front surface of the N-type crystalline silicon matrix after step (5) processing prepares passivated reflection reducing membrane and prepared in back surface blunt
Change film, then use metal paste printed back electrode in the back surface of N-type crystalline silicon matrix, the secondary grid in the back side of backplate with
Local n+ heavily doped regions connection；Prepared and connect with p+ doped regions ohm using wire in the front surface of N-type crystalline silicon matrix
The preparation of local back surface N-type solar cell is completed after tactile front electrode, sintering.
2. a kind of preparation method of local back surface field N-type solar cell according to claim 1, it is characterised in that：
In step (6), preparing the method for front electrode is：The wire of mixing aluminum paste will be attached and be attached to N-type crystalline silicon matrix
After front surface, drying, sintering, wire and p+ doped regions formation Ohmic contact.
3. a kind of preparation method of local back surface field N-type solar cell according to claim 1, it is characterised in that：
In step (6), preparing the method for front electrode is：It is secondary using aluminum paste printing segmentation is mixed in the front surface of N-type crystalline silicon matrix
Grid；Then lay and formed between the secondary grid of segmentation, wire and p+ doped region threes after wire, sintering on the secondary grid of segmentation
Ohmic contact.
4. a kind of preparation method of local back surface field N-type solar cell according to claim 1, it is characterised in that：
In step (6), preparing the method for front electrode is：It is secondary using aluminum paste printing segmentation is mixed in the front surface of N-type crystalline silicon matrix
Grid, are then sintered；Printing thermal conductive layer on the secondary grid of the segmentation of N-type crystalline silicon matrix after sintering；Then exist
Laying is coated with the wire of sensitive Conductive Materials on thermo-sensitive conductive layer, will lay the N for the wire for being coated with sensitive Conductive Materials
Type crystal silicon substrate is heated so that be coated with wire, thermo-sensitive conductive layer, p+ doped regions and the segmentation of sensitive Conductive Materials
Ohmic contact is formed between secondary grid.
5. a kind of preparation method of local back surface field N-type solar cell according to claim 4, it is characterised in that：
The thermo-sensitive conductive layer is tin cream conductive layer, and the wire for being coated with sensitive Conductive Materials is tin coppered wire, silver-colored coppered wire, tin
Any of alclad silk or tin Baogang silk；Tin cream contains any in tin, leypewter, sn-bi alloy or tin-lead silver alloy
Kind.
6. a kind of preparation method of local back surface field N-type solar cell according to claim 4, it is characterised in that：
It is that by the way of infrared heating, the reflow peak temperature of heating is 183-250 to the mode that N-type crystalline silicon matrix is heated
Degree Celsius.
7. a kind of preparation method of local back surface field N-type solar cell according to claim 1, it is characterised in that：
Step comprises the following steps in (1) to the method that N-type crystalline silicon matrix is doped processing：
S1, selection N-type crystalline silicon matrix, and making herbs into wool processing is made to the preceding surface of N-type crystalline silicon matrix；N-type crystalline silicon matrix
Resistivity is 0.5~15 Ω cm；
S2, by step S1 processing after N-type crystalline silicon matrix be put into industrial diffusion furnace to making herbs into wool face carry out boron diffuse to form
The p+ doped regions of front surface, boron source uses Boron tribromide, and diffusion temperature is 900-1000 DEG C, and the time is 60-180 minutes；Boron
Sheet resistance value after diffusion is 40-100 Ω/sqr；
S3, boron is spread after N-type crystalline silicon matrix be put into etching cleaning machine, remove back surface diffused layer of boron and front surface
Pyrex layer；
S4, injected and phosphorus and made annealing treatment using N-type crystalline silicon matrix back surface of the ion implantation apparatus after step S3 processing
The n+ heavily doped regions of back surface are formed, the sheet resistance value of n+ heavily doped regions is 10-40 Ω/sqr；The peak temperature of annealing is
700~950 DEG C, annealing time is 30~200min, and environment source of the gas is N2And O2。
8. according to a kind of preparation method of any described local back surface field N-type solar cells of claim 1-7, its feature
It is：The barrier layer is SiO2Layer or SiNxLayer, the thickness of frontside barrier layers is 200-300nm, and backside barrier layer thickness is
50-100nm。
9. a kind of preparation method of local back surface field N-type solar cell according to claim 1, it is characterised in that：
A width of 20-100um of the mask of secondary palisade pattern in step (2), parallel to each other, spacing is 1-2mm.
10. a kind of preparation method of local back surface field N-type solar cell according to claim 1, it is characterised in that：
Acid solution in step (3) is in 5-20% HF solution, and the time in N-type crystalline silicon matrix immersion 5-20%HF solution is
0.5-5 minutes, cleaned after taking out N-type crystalline silicon matrix with deionized water.
11. a kind of preparation method of local back surface field N-type solar cell according to claim 1, it is characterised in that：
The alkaline solution in step (4) is 10~30% KOH solution, 10~30% NaOH solution, 10~30% tetramethyl
Base Ammonia or 10~30% ethylenediamine solution；The temperature of alkaline solution is 50-90 DEG C, N-type crystalline silicon matrix
The reaction time immersed in alkaline solution is 0.5-5 minutes, is cleaned after taking out N-type crystalline silicon matrix with deionized water.
12. a kind of preparation method of local back surface field N-type solar cell according to claim 1, it is characterised in that：
During acid solution in step (5) is 5-20% HF solution, the time in N-type crystalline silicon matrix immersion 5-20%HF solution is
2-5 minutes, cleaned after taking out N-type crystalline silicon matrix with deionized water.
13. a kind of preparation method of local back surface field N-type solar cell according to claim 1, it is characterised in that：
In step (6), the method for preparing backplate in the back surface of N-type crystalline silicon matrix is：In the back surface of N-type crystalline silicon matrix
The backplate of H type grid lines is printed using silver paste and is dried, wherein the wide 0.5-3mm of back side main grid, spaced set 3-6
Root, back side pair grid width 20-100um.
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