CN106847982A - The N-type double-side cell structure that the back side is locally adulterated - Google Patents
The N-type double-side cell structure that the back side is locally adulterated Download PDFInfo
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- CN106847982A CN106847982A CN201710054877.2A CN201710054877A CN106847982A CN 106847982 A CN106847982 A CN 106847982A CN 201710054877 A CN201710054877 A CN 201710054877A CN 106847982 A CN106847982 A CN 106847982A
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- 239000011159 matrix material Substances 0.000 claims abstract description 56
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 39
- 239000011574 phosphorus Substances 0.000 claims abstract description 39
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 37
- 230000008021 deposition Effects 0.000 claims abstract description 15
- 239000012528 membrane Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 10
- 229910004205 SiNX Inorganic materials 0.000 claims description 9
- 239000002002 slurry Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Substances BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 230000003667 anti-reflective effect Effects 0.000 claims description 5
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 4
- 239000005416 organic matter Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910015845 BBr3 Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims description 3
- 239000013528 metallic particle Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- 239000005297 pyrex Substances 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
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- 239000010931 gold Substances 0.000 claims 1
- 239000002923 metal particle Substances 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 10
- 210000004027 cell Anatomy 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The present invention provides the N-type double-side cell structure that a kind of back side is locally adulterated, including matrix, matrix is N-type, front side of matrix is the emitter stage of boron-doping, deposition has the first passivated reflection reducing film layer on emitter stage, first passivated reflection reducing film layer is provided with front electrode, and front electrode forms Ohmic contact by the first passivated reflection reducing membrane with emitter stage；The matrix back side is the local back surface field region of phosphorus doping, and matrix backside deposition the second passivated reflection reducing film layer has local backplate in the second passivated reflection reducing film layer, local backplate forms Ohmic contact by the second passivated reflection reducing membrane with back surface field area；The N-type double-side cell structure that this kind of back side is locally adulterated, local back surface field region is set using back surface, the compound of back surface doped region is reduced, so as to improve battery efficiency.
Description
Technical field
The present invention relates to the N-type double-side cell structure that a kind of back side is locally adulterated.
Background technology
The silicon materials used in current solar cell mainly have two classes, respectively N-type silicon materials and P-type silicon material.Its
In, N-type silicon materials have the following advantages that compared with P-type silicon material：The capture energy of impurity in n type material to sub- hole less
Power is less than capture ability of the impurity in P-type material to sub- electronics less.The minority carrier life time of the N-type silicon chip of same resistivity compares p-type
The height of silicon chip, reaches Millisecond.N-type silicon chip miscellaneous tolerance dirty to metal is higher than P-type silicon piece, Fe, Cr, Co, W, Cu,
Influence of the metals such as Ni to P-type silicon piece is big than N-type silicon chip.N-type silion cell component shows than conventional P-type silicon group under dim light
The more excellent power generation characteristics of part.N-type double-side cell is luminous using back surface, under different reflective surface conditions, can be with multiple
Electricity 30%.People increasingly pay close attention to the N-type cell that minority carrier life time is higher, development potentiality is bigger.
But, the key factor that efficiency is restricted in N-type double-side cell be back surface field bring it is compound, particularly carry on the back table
Face doped region it is compound.
Above mentioned problem is the problem that should be paid attention to and solve in the design and production process of solar cell.
The content of the invention
It is an object of the invention to provide the N-type double-side cell structure that a kind of back side is locally adulterated, back surface sets local back
Field areas, reduces the compound of back surface doped region, so that reducing, back surface is overall to be combined, solves present in prior art
Back surface is compound serious, restricts the problem of N-type double-side cell efficiency.
Technical solution of the invention is：
The N-type double-side cell structure that a kind of back side is locally adulterated, including matrix, matrix are N-type, and front side of matrix is the transmitting of boron-doping
Pole, deposition has the first passivated reflection reducing film layer on emitter stage, and the first passivated reflection reducing film layer is provided with front electrode, and front electrode passes through
First passivated reflection reducing membrane forms Ohmic contact with emitter stage；The matrix back side is the local back surface field region of phosphorus doping, and the matrix back side sinks
The second passivated reflection reducing film layer of product, there is local backplate in the second passivated reflection reducing film layer, local backplate is by the second passivation
Antireflective film forms Ohmic contact with back surface field area.
Further, the emitter stage of front side of matrix uses Boron tribromide BBr3High temperature diffusion, normal atmosphere vapor deposition APCVD
Method deposition Pyrex BSG annealing or ion implanting boron source annealing process are formed.
Further, the first antireflective passive film uses SiNx, SiO2、TiO2、Al2O3, one kind in SiOxNy films or
Person is various, and thickness is 50-90nm；Second passivated reflection reducing membrane is SiNx, SiO2、TiO2、Al2O3, one kind in SiOxNy films or
Person is various, and thickness is 50-90nm.
Further, the local back surface field region of matrix back side phosphorus doping is mixed using the phosphorous slurry annealing of silk-screen printing, laser
Miscellaneous phosphorus slurry or ion implanting phosphorus source annealing process are formed；Local backplate uses silk-screen printing, plating, chemical plating, ink-jet
Printing or physical vapour deposition (PVD) metal level are formed, wherein, metal uses one or more in Ni, Cu, Ag, Ti, Pd, Cr of group
Close.
Further, the local back surface field region of matrix back side phosphorus doping using the line segment of continuous linear or separation, round dot,
Irregular shape, the ratio that the local back surface field region of matrix back side phosphorus doping accounts for matrix backside area is 5%-30%.
Further, when the local back surface field region of phosphorus doping uses straight line, the local back surface field region of matrix back side phosphorus doping
Linear width be 80 microns -600 microns；When the local back surface field region of phosphorus doping uses round dot, a diameter of 200 microns of round dot-
600 microns, the sheet resistance in the local back surface field region of matrix back side phosphorus doping is 10-90ohm/sq.
Further, the local back surface field region of matrix back side phosphorus doping is formed with local backplate, when the office of phosphorus doping
When portion back surface field area uses straight line with local backplate, be connected with each other for each local backplate by connection main grid, connection
Main grid does not form Ohmic contact with local back surface field region.
Further, local backplate is the straight line of 10-100 μm of width, and the width for connecting main grid is 0.5mm-
1.5mm, connection main grid is welded using silk-screen printing sintering, conductive adhesive or metal wire, and connection main grid is Ag or table
Bread is covered with the Cu bands or the organic matter containing metallic particles of plating In, Sn, Pb.
Further, the local back surface field region of matrix back side phosphorus doping is formed with local backplate, when the office of phosphorus doping
When portion back surface field area is separate region, connects thin grid and be connected with each other each local backplate, then be flowed to connection main grid
On, thin grid are connected with main grid is connected does not form Ohmic contact with local back surface field region.
Further, local backplate uses line segment or circle, and width is 10-100 μ when local backplate is line segment
M, a diameter of 30-100 μm when circular, it is 20 μm -100 μm to connect thin grid width, and the width for connecting main grid is 0.5mm-1.5mm；
Connect thin grid and connection main grid is respectively adopted silk-screen printing sintering, conductive adhesive or metal wire and is welded, connect thin grid
With connection main grid be Ag or Surface coating has the Cu bands or the organic matter containing metallic particles for plating In, Sn, Pb.
The beneficial effects of the invention are as follows：The N-type double-side cell structure that this kind of back side is locally adulterated, using back surface setting office
Portion back surface field area, it is compound that reduction back surface doped region brings, so that reducing, back surface is overall to be combined.The present invention can drop
Low back surface it is compound, so as to improve battery efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of the N-type double-side cell structure that the embodiment of the present invention back side is locally adulterated；
Fig. 2 is the local back surface field area schematic at the matrix back side in embodiment two；
Fig. 3 is the local back surface field area schematic at the matrix back side in embodiment three；
Fig. 4 is the local back surface field area schematic at the matrix back side in example IV；
Fig. 5 is the local backplate and the structural representation for being connected main grid at the matrix back side in embodiment two；
Fig. 6 is the local backplate and the structural representation for being connected thin grid, connection main grid at the matrix back side in embodiment three；
Fig. 7 is the local backplate and the structural representation for being connected thin grid, connection main grid at the matrix back side in example IV；
Wherein：1- matrixes, 2- emitter stages, 3- the first passivated reflection reducing film layers, 4- front electrodes, 5- local back surface fields region, 6- second
Passivated reflection reducing film layer, 7- part backplates, 8- connects thin grid, 9- connection main grids.
Specific embodiment
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
Embodiment one
The N-type double-side cell structure that a kind of back side is locally adulterated, such as Fig. 1, including matrix 1, matrix 1 are N-type, and the front of matrix 1 is
The emitter stage 2 of boron-doping, deposition has the first passivated reflection reducing film layer 3 on emitter stage 2, and the first passivated reflection reducing film layer 3 is provided with front electricity
Pole 4, front electrode 4 forms Ohmic contact by the first passivated reflection reducing membrane with emitter stage 2；The back side of matrix 1 is the part of phosphorus doping
, there is local backplate 7 back surface field area 5, the second passivated reflection reducing of the backside deposition film layer 6 of matrix 1 in the second passivated reflection reducing film layer 6,
Local backplate 7 forms Ohmic contact by the second passivated reflection reducing membrane with back side local doped region domain 5.
The N-type double-side cell structure that this kind of back side is locally adulterated, local back surface field region 5 is set using back surface, reduces the back of the body
Surface doped region it is compound, so as to reduce overall compound of back surface.The present invention can reduce the compound of back surface, so as to carry
Battery efficiency high.
First antireflective passive film uses SiNx, SiO2、TiO2、Al2O3, one or more in SiOxNy films, it is thick
It is 50-90nm to spend；Second passivated reflection reducing membrane is SiNx, SiO2、TiO2、Al2O3, one or more in SiOxNy films, it is thick
It is 50-90nm to spend.
The local back surface field region 5 of the back side phosphorus doping of matrix 1 is using the phosphorous slurry annealing of silk-screen printing, the phosphorous slurry of laser doping
Material or ion implanting phosphorus source annealing process are formed, and the sheet resistance in the local back surface field region 5 of the back side phosphorus doping of matrix 1 is 10-90ohm/
sq.The local back surface field region 5 of the back side phosphorus doping of matrix 1 uses line segment, round dot, the irregular figure of continuous linear or separation,
The ratio that the local back surface field region 5 of the back side phosphorus doping of matrix 1 accounts for the backside area of matrix 1 is 5%-30%.The local back surface field of phosphorus doping
When region 5 is using continuous linear, the linear width in the local back surface field region 5 of the back side phosphorus doping of matrix 1 is 80 microns -600 microns；
When the local back surface field region 5 of phosphorus doping is using round dot, a diameter of 100 microns -600 microns of round dot.
Local backplate 7 is using silk-screen printing, plating, chemical plating, inkjet printing or physical vapour deposition (PVD) metal level shape
Into, wherein, metal uses one or more in Ni, Cu, Ag, Ti, Pd, Cr of combination.
Embodiment two
Embodiment two is essentially identical with embodiment one, and embodiment two is with the difference of embodiment one：As shown in Figure 1, Figure 2 and figure
Shown in 5, the front of N-type matrix 1 uses BBr3 High temperature diffusions emitter stage 2, sheet resistance 65ohm/sq, high temperature oxygen metaplasia on emitter stage 2
Into 10nm SiO2Film, and 65nmSiNx films are deposited, AgAl electrodes are printed using silk-screen printing.The back side of matrix 1 uses silk
The mode of wire mark brush phosphorus slurry forms continuous linear, and width is 300 μm, and occupied area is 18%, and sheet resistance is after high annealing
40ohm/sq.The back side high growth temperature 10nmSiO of matrix 12Film, and 65nmSiNx films are deposited, using silk-screen printing part
Backplate 7, local backplate 7 is using SiNx film Ag slurries are burnt, and 50 μm wide, is printed in local backplate 7 and connected
Main grid 9 is connect, connection main grid 9 uses non-burn-through SiNx film Ag slurries, and 1.5mm is wide.
Embodiment three
Embodiment three is essentially identical with embodiment one, and embodiment three is with the difference of embodiment one：Such as Fig. 1, Fig. 3 and Tu
Shown in 6, the front ion implanting boron source high annealing of N-type matrix 1, sheet resistance 75ohm/sq deposits 10nm Al thereon2O3Film and
60nmSiNx films, using electroplating deposition Ni, Cu, Ag metal level.The back side of matrix 1 forms line using the method for ion implanting phosphorus source
Section, width is 200 μm, and occupied area is 10%, high annealing, and sheet resistance is 30ohm/sq.75nmSiNx films are deposited thereon, are adopted
Electroplating deposition Ni, Cu, Ag metal level is used, width is 40 μm, the Cu lines coated using Sn, 200 μm of diameter, as the thin grid 8 of connection,
The Cu lines of In are coated, width 1mm couples together electrode as connection main grid 9.
Example IV
Example IV is essentially identical with embodiment one, and example IV is with the difference of embodiment one：Such as Fig. 1, Fig. 4 and Tu
Shown in 7, the front surface A PCVD depositions BSG of N-type matrix 1 anneals to form emitter stage 2, and sheet resistance 75ohm/sq deposits 10nm's thereon
TiO2The SiNx films of film and 60nm, using PVD deposition Ti, Pd, Ag metal level.The back side of matrix 1 uses laser doping phosphorus
The method in source forms circle, and a diameter of 300 μm, occupied area is 12%, and sheet resistance is 35ohm/sq.Deposition 75nmSiNx is thin thereon
Film, using PVD deposition Ti, Pd, Ag metal level, 80 μm of diameter, the Cu lines coated using Sn, 200 μm of diameter, as the thin grid of connection
The conducting resinl of 8, width 1mm couples together electrode as connection main grid 9.
Claims (10)
1. the N-type double-side cell structure that a kind of back side is locally adulterated, it is characterised in that：Including matrix, matrix is N-type, and matrix is just
Face is the emitter stage of boron-doping, and deposition has the first passivated reflection reducing film layer on emitter stage, and the first passivated reflection reducing film layer is provided with front electricity
Pole, front electrode forms Ohmic contact by the first passivated reflection reducing membrane with emitter stage；The matrix back side is the local back surface field of phosphorus doping
Region, matrix backside deposition the second passivated reflection reducing film layer has local backplate, local back side electricity in the second passivated reflection reducing film layer
Pole forms Ohmic contact by the second passivated reflection reducing membrane with back surface field area.
2. the N-type double-side cell structure that the back side as claimed in claim 1 is locally adulterated, it is characterised in that：The hair of front side of matrix
Emitter-base bandgap grading uses BBr3High temperature diffusion, the deposition Pyrex BSG annealing of aumospheric pressure cvd APCVD methods or ion implanting boron source
Annealing process is formed.
3. the N-type double-side cell structure that the back side as claimed in claim 1 is locally adulterated, it is characterised in that：First antireflective is blunt
Change film and use SiNx, SiO2、TiO2、Al2O3, one or more in SiOxNy films, thickness is 50-90nm；Second passivation
Antireflective film is SiNx, SiO2、TiO2、Al2O3, one or more in SiOxNy films, thickness is 50-90nm.
4. the N-type double-side cell structure that the back side as claimed in claim 1 is locally adulterated, it is characterised in that：Matrix back side phosphorus is mixed
Miscellaneous local back surface field region is using the phosphorous slurry annealing of silk-screen printing, the phosphorous slurry of laser doping or ion implanting phosphorus source lehr attendant
Skill is formed；Local backplate is formed using silk-screen printing, plating, chemical plating, inkjet printing or physical vapour deposition (PVD) metal level,
Wherein, metal uses one or more in Ni, Cu, Ag, Ti, Pd, Cr of combination.
5. the N-type double-side cell structure that the back side as described in claim any one of 1-4 is locally adulterated, it is characterised in that：Matrix
Mixed using continuous linear or line segment, round dot, the irregular figure of separation, matrix back side phosphorus in the local back surface field region of back side phosphorus doping
The ratio that miscellaneous local back surface field region accounts for matrix backside area is 5%-30%.
6. the N-type double-side cell structure that the back side as claimed in claim 5 is locally adulterated, it is characterised in that：The part of phosphorus doping
When back surface field area uses continuous linear, the linear width in the local back surface field region of matrix back side phosphorus doping is 80 micron -600 micro-
Rice；When the local back surface field region of phosphorus doping uses round dot, a diameter of 100 microns -600 microns of round dot, matrix back side phosphorus doping
The sheet resistance in local back surface field region is 10-90ohm/sq.
7. the N-type double-side cell structure that the back side as claimed in claim 1 is locally adulterated, it is characterised in that：Matrix back side phosphorus is mixed
Miscellaneous local back surface field region is formed with local backplate, when local back surface field region and the local backplate of phosphorus doping are used
During straight line, be connected with each other for each local backplate by connection main grid, and connection main grid does not form ohm and connects with local back surface field region
Touch.
8. the N-type double-side cell structure that the back side as claimed in claim 7 is locally adulterated, it is characterised in that：Local backplate
It is 10-100 μm of straight line of width, the width for connecting main grid is 0.5mm-1.5mm, connection main grid is sintered using silk-screen printing, led
Electric glue sticking or metal wire are welded, and connection main grid is Ag or Surface coating has the Cu bands of plating In, Sn, Pb or contains gold
The organic matter of metal particles.
9. the N-type double-side cell structure that the back side as claimed in claim 1 is locally adulterated, it is characterised in that：Back side phosphorus doping
Local back surface field region is formed with local backplate, when local back surface field area is separate shape, connects thin grid by each office
Portion backplate is connected with each other, then is flowed on connection main grid, connect thin grid be connected main grid not with local back surface field region shape
Into Ohmic contact.
10. the N-type double-side cell structure that the back side as claimed in claim 9 is locally adulterated, it is characterised in that：Local backplate
Using line segment or circle, width is 10-100 μm when local backplate is line segment, and a diameter of 30-100 μm when circular, connection is thin
Grid width is 20 μm -100 μm, and the width for connecting main grid is 0.5mm-1.5mm；Connect thin grid and connection main grid is respectively adopted silk screen
Printing-sintering, conductive adhesive or metal wire are welded, connect thin grid and connection main grid be Ag or Surface coating have plating In,
The Cu lines or the organic matter containing metallic particles of Sn, Pb.
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