CN206907775U - The N-type double-side cell structure of selective back surface field - Google Patents

The N-type double-side cell structure of selective back surface field Download PDF

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CN206907775U
CN206907775U CN201720093932.4U CN201720093932U CN206907775U CN 206907775 U CN206907775 U CN 206907775U CN 201720093932 U CN201720093932 U CN 201720093932U CN 206907775 U CN206907775 U CN 206907775U
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back surface
surface field
phosphorus
field area
matrix
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李华
鲁伟明
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Taizhou Longi Solar Technology Co Ltd
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Taizhou Longi Solar Technology Co Ltd
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Abstract

The utility model provides a kind of N-type double-side cell structure of selective back surface field, including matrix, matrix is N-type, front side of matrix is the emitter stage of boron-doping, deposition has the first passivated reflection reducing film layer on emitter stage, first passivated reflection reducing film layer is provided with front electrode, and front electrode forms Ohmic contact through the first passivated reflection reducing membrane and emitter stage；The matrix back side is provided with the back surface field area of phosphorus doping, the back surface field area and the back surface field area of phosphorus heavy doping that the back surface field area of phosphorus doping is lightly doped including phosphorus, the second passivated reflection reducing film layer is deposited on the back surface field area of phosphorus doping, second passivated reflection reducing film layer is provided with local backplate, and local backplate forms Ohmic contact in phosphorus heavy doping back surface field area and through the second reduced passivation resisting film and the back surface field area of phosphorus heavy doping；The utility model can reduce the recombination rate of back surface, so as to improve battery efficiency.

Description

The N-type double-side cell structure of selective back surface field
Technical field
It the utility model is related to a kind of N-type double-side cell structure of selective back surface field.
Background technology
The silicon materials used at present in solar cell mainly have two classes, respectively N-type silicon materials and P-type silicon material.Its In, N-type silicon materials have the following advantages that compared with P-type silicon material：The capture energy of impurity in n type material to sub- hole less Power is less than capture ability of the impurity in P-type material to sub- electronics less.The minority carrier life time of the N-type silicon chip of same resistivity compares p-type The height of silicon chip, reaches Millisecond.N-type silicon chip is higher than P-type silicon piece, Fe, Cr, Co, W, Cu, Ni etc. to the dirty miscellaneous tolerance of metal Influence of the metal to P-type silicon piece is big than N-type silicon chip.N-type silion cell component is shown than conventional P-type silicon component more under dim light Excellent power generation characteristics.People increasingly pay close attention to the N-type cell that minority carrier life time is higher, development potentiality is bigger.
But the principal element that efficiency is restricted in N-type double-side cell is that metallization is brought compound, particularly back surface Metallic region it is compound.
Above mentioned problem should be paid attention to and solved the problems, such as in the design and production process of solar cell.
Utility model content
The purpose of this utility model is to provide a kind of N-type double-side cell structure of selective back surface field, in metallic region The laser doping technique by PSG is used to form high-dopant concentration region to reduce the compound of metallic region, so as to reduce the back of the body Overall compound in surface, it is compound serious to solve back surface metallic region present in prior art, restricts N-type double-side cell efficiency The problem of.
Technical solution of the present utility model is：
The N-type double-side cell structure of selective back surface field, including matrix, matrix are N-type, and front side of matrix is the hair of boron-doping Emitter-base bandgap grading, deposition has the first passivated reflection reducing film layer on emitter stage, and the first passivated reflection reducing film layer is provided with front electrode, and front electrode is worn Cross the first passivated reflection reducing membrane and form Ohmic contact with emitter stage；The matrix back side is provided with the back surface field area of phosphorus doping, the back of the body of phosphorus doping The back surface field area and the back surface field area of phosphorus heavy doping that field areas is lightly doped including phosphorus, the back surface field area of phosphorus heavy doping and phosphorus are lightly doped Back surface field area it is adjacent and be uniformly arranged in back surface, deposit the second passivated reflection reducing film layer on the back surface field area of phosphorus doping, second Passivated reflection reducing film layer is provided with local backplate, and local backplate is in phosphorus heavy doping back surface field area and passes through the second anti-reflection Passivating film and the back surface field area of phosphorus heavy doping form Ohmic contact.
Further, the emitter stage of front side of matrix uses Boron tribromide BBr3High temperature diffusion, silk-screen printing boracic slurry are high Temperature annealing, the deposition Pyrex BSG annealing of aumospheric pressure cvd APCVD methods or ion implanting boron source annealing process are formed.
Further, the first passivated reflection reducing membrane is using SiNx films, SiO2Film, TiO2Film, Al2O3Film, SiOxNy One or more kinds of laminations in film are formed, thickness 50-90nm；Second passivated reflection reducing membrane at the matrix back side is SiNx thin Film, SiO2Film, TiO2Film, Al2O3One or more kinds of laminations in film, SiOxNy films are formed, thickness 50- 90nm。
Further, the back surface field area that the phosphorus at the matrix back side is lightly doped uses High temperature diffusion or aumospheric pressure cvd APCVD methods deposition Pyrex BSG anneals to be formed, and the phosphorus lightly doped region back surface field sheet resistance at the matrix back side is 90-250ohm/sq.
Further, the phosphorus heavy doping back surface field area at the matrix back side is formed using laser doping technique, sheet resistance 10- 50ohm/sq。
Further, the phosphorus heavy doping back surface field area at the matrix back side is straight line or line segment, and width is 80 micron -600 micro- Rice, the ratio that phosphorus heavy doping back surface field area accounts for matrix backside area is 8%-30%.
Further, front electrode and local backplate be respectively adopted silk-screen printing, plating, chemical plating, inkjet printing, Physical vapour deposition (PVD) metal level is formed, wherein, metal uses combination one or more in Ni, Cu, Ag, Ti, Pd, Cr.
Further, when phosphorus heavy doping back surface field area is straight line, after forming local backplate, main grid is connected by each office Portion's backplate is connected with each other, and connection main grid does not form Ohmic contact with local back surface field region.
Further, width is 10-100 μm when local backplate is straight line, and connection main grid width is 0.5mm- 1.5mm；Connection main grid is welded using silk-screen printing sintering, conductive adhesive or metal wire, and connection main grid is Ag or table Bread is covered with plating In, Sn, Pb Cu bands or the organic matter containing metallic particles.
Further, when phosphorus heavy doping back surface field area is line segment, after forming local backplate, thin grid are connected by each office Portion backplate is connected with each other, then is flowed in connection main gate line, connect thin grid be connected main gate line not with local back place Domain forms Ohmic contact.
Further, width is 10-100 μm when local backplate is line segment, connects thin grid width as 20 μm -100 μm, It is 0.5mm-1.5mm to connect main grid width；Connect thin grid and connection main grid be respectively adopted silk-screen printing sintering, conductive adhesive or Person's metal wire is welded, and connect thin grid and main grid has plating In, Sn, Pb Cu bands or containing metal for Ag or Surface coating The organic matter of grain.
The beneficial effects of the utility model are：The N-type double-side cell structure of this kind of selective back surface field, in metallic region The compound of metallic region is reduced to form high-dopant concentration region using by PSG laser doping technique, so as to reduce back of the body table Overall compound in face.The utility model can reduce the recombination rate of back surface, so as to improve battery efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of the N-type double-side cell structure of the utility model embodiment selectivity back surface field；
Fig. 2 is the structural representation at the matrix back side in embodiment two；
Fig. 3 is the structural representation at the matrix back side in embodiment three；
Fig. 4 is the structural representation of the local backplate at the matrix back side in embodiment two；
Fig. 5 is the structural representation of the local backplate at the matrix back side in embodiment three；
Wherein：1- matrixes, 2- emitter stages, 3- the first passivated reflection reducing film layers, 4- front electrodes, the back surface field area that 5- phosphorus is lightly doped Domain, the back surface field area of 6- phosphorus heavy doping, 7- the second passivated reflection reducing film layers, 8- part backplates, the thin grid of 9- connections, 10- connections Main grid.
Embodiment
Describe preferred embodiment of the present utility model in detail below in conjunction with the accompanying drawings.
Embodiment one
A kind of N-type double-side cell structure of selective back surface field, such as Fig. 1, including matrix 1, matrix 1 are N-type, matrix 1 Front is the emitter stage 2 of boron-doping, and being deposited on emitter stage 2 has the first passivated reflection reducing film layer 3, and the first passivated reflection reducing film layer 3 is provided with Front electrode 4, front electrode 4 form Ohmic contact through the first passivated reflection reducing membrane and emitter stage 2；Mixed provided with phosphorus at the back side of matrix 1 Miscellaneous back surface field area, the back surface field area of phosphorus doping include the back surface field area 5 that phosphorus is lightly doped and the back surface field area 6 of phosphorus heavy doping, phosphorus The back surface field area 5 that back surface field area 6 and the phosphorus of heavy doping are lightly doped is adjacent and is uniformly distributed in back surface field area, the back surface field area of phosphorus doping The second passivated reflection reducing film layer 7 is deposited on domain, the second passivated reflection reducing film layer 7 is provided with local backplate 8, local backplate 8 Ohmic contact is formed in phosphorus heavy doping back surface field area and through the second reduced passivation resisting film and the back surface field area 6 of phosphorus heavy doping.
The N-type double-side cell structure of this kind of back side part heavy doping, the laser doping work by PSG is used in metallic region Skill reduces the compound of metallic region to form high-dopant concentration region, so as to reduce the compound of back surface entirety.The utility model The compound of back surface can be reduced, so as to improve battery efficiency.
First passivated reflection reducing membrane uses SiNx, SiO2、TiO2、Al2O3, one or more in SiOxNy films, thickness For 50-90nm；Second passivated reflection reducing membrane at the back side of matrix 1 is SiNx, SiO2、TiO2、Al2O3, one kind in SiOxNy films or Person is a variety of, thickness 50-90nm.
The phosphorus at the back side of matrix 1 is lightly doped back surface field and formed using High temperature diffusion or APCVD deposition PSG high annealings, and matrix 1 is carried on the back It is 90-250ohm/sq that back surface field sheet resistance, which is lightly doped, in the phosphorus in face.
The phosphorus heavy doping back surface field area at the back side of matrix 1 is formed using laser doping technique, sheet resistance 10-50ohm/sq.Base The phosphorus heavy doping back surface field area at the back side of body 1 is straight line or line segment, and width is 80 microns -600 microns, phosphorus heavy doping back surface field area The ratio for accounting for the backside area of matrix 1 is 8%-30%.
Silk-screen printing, plating, chemical plating, inkjet printing, physics gas is respectively adopted with local backplate 8 in front electrode 4 Phase deposited metal layer is formed, wherein, metal uses combination one or more in Ni, Cu, Ag, Ti, Pd, Cr.
Apply example two
Embodiment two and embodiment one are essentially identical, and the difference of embodiment two and embodiment one is：As shown in Figure 1, Figure 2 Shown in Fig. 4, N-type matrix 1,1 positive BBr of matrix3High temperature diffusion, sheet resistance 65ohm/sq, the 10nm of high-temperature oxydation generation thereon SiO2Film, 65nmSiNx films are deposited thereon, AgAl electrodes are printed using silk-screen printing.The back side of matrix 1 uses High temperature diffusion The back surface field area 5 that phosphorus is lightly doped is formed, sheet resistance 150ohm/sq, local phosphorus heavy doping back surface field is formed by PSG laser doping Region, sheet resistance 30ohm, it is straight line, width is 200 μm, accounts for the backside area 10% of matrix 1, the back side high growth temperature of matrix 1 10nmSiO2Film, and 65nmSiNx films are deposited, using slurry silk-screen printing printing Ag electrodes are burnt, formed after sintering local Backplate 8, local backplate 8 and the back surface field area 6 of phosphorus heavy doping form Ohmic contact, are printed using non-burn-through Ag slurries Connection main grid 10 connects local backplate 8.
Embodiment three
Embodiment three and embodiment one are essentially identical, and the difference of embodiment three and embodiment one is：Such as Fig. 1, Fig. 3 Shown in Fig. 5, N-type matrix 1, the front surface A PCVD deposition BSG high annealings of matrix 1, sheet resistance 75ohm/sq, atomic layer deposition thereon Area method deposition 10nm Al2O3Film, 60nmSiNx films is deposited thereon, using PVD method depositing Ti, Pd, Ag metal electrode, width For 40 μm.The back side of matrix 1 diffuses to form the back surface field area 5 that phosphorus is lightly doped using APCVD deposition BSG annealing, and sheet resistance is 200ohm/sq, local phosphorus heavy doping back surface field area is formed by laser doping, sheet resistance 40ohm is line segment, and width is 300 micro- Rice, accounts for back surface area 15%, backside deposition 75nmSiNx films, using PVD method depositing Ti, Pd, Ag metal electrode, width is 50 μm, the Cu lines coated using Sn, 200 μm of diameter, as thin grid 9 are connected, In Cu lines are coated, width 1mm is led as connection Grid 10 connect local backplate.

Claims (8)

  1. A kind of 1. N-type double-side cell structure of selective back surface field, it is characterised in that：Including matrix, matrix is N-type, matrix Front is the emitter stage of boron-doping, and being deposited on emitter stage has the first passivated reflection reducing film layer, and the first passivated reflection reducing film layer is provided with front Electrode, front electrode form Ohmic contact through the first passivated reflection reducing membrane and emitter stage；The matrix back side is provided with the back surface field of phosphorus doping Region, the back surface field area of phosphorus doping include the back surface field area that phosphorus is lightly doped and the back surface field area of phosphorus heavy doping, the back of the body of phosphorus heavy doping The back surface field area that field areas and phosphorus are lightly doped is adjacent and is uniformly arranged in back surface, and it is blunt that second is deposited on the back surface field area of phosphorus doping Change anti-reflection film layer, the second passivated reflection reducing film layer is provided with local backplate, and local backplate is in phosphorus heavy doping back surface field area Interior and through the second reduced passivation resisting film and phosphorus heavy doping back surface field area forms Ohmic contact.
  2. 2. the N-type double-side cell structure of selective back surface field as claimed in claim 1, it is characterised in that：First passivation subtracts Anti- film is using SiNx films, SiO2Film, TiO2Film, Al2O3One or more kinds of lamination structures in film, SiOxNy films Into thickness 50-90nm；Second passivated reflection reducing membrane at the matrix back side is SiNx films, SiO2Film, TiO2Film, Al2O3It is thin One or more kinds of laminations in film, SiOxNy films are formed, thickness 50-90nm.
  3. 3. the N-type double-side cell structure of selective back surface field as claimed in claim 1, it is characterised in that：The matrix back side The back surface field area sheet resistance that phosphorus is lightly doped is 90-250ohm/sq, and the phosphorus heavy doping back surface field area sheet resistance at the matrix back side is 10- 50ohm/sq。
  4. 4. the N-type double-side cell structure of selective back surface field as claimed in claim 1, it is characterised in that：The matrix back side Phosphorus heavy doping back surface field area is straight line or line segment, and width is 80 microns -600 microns, and phosphorus heavy doping back surface field area accounts for the matrix back of the body The ratio of face area is 8%-30%.
  5. 5. the N-type double-side cell structure of the selective back surface field as described in claim any one of 1-4, it is characterised in that：Phosphorus When heavy doping back surface field area is straight line, after forming local backplate, each local backplate is connected with each other by connection main grid, Connect main grid and do not form Ohmic contact with local back surface field region.
  6. 6. the N-type double-side cell structure of selective back surface field as claimed in claim 5, it is characterised in that：Local back side electricity Extremely straight line, width are 10-100 μm, and connection main grid width is 0.5mm-1.5mm；Connection main grid is sintered using silk-screen printing, led Electric glue sticking or metal wire are welded.
  7. 7. the N-type double-side cell structure of the selective back surface field as described in claim any one of 1-4, it is characterised in that：Phosphorus Heavy doping back surface field area is line segment, after forming local backplate, connects thin grid and is connected with each other each local backplate, then It is flowed in connection main gate line, connects thin grid and do not form Ohmic contact with local back surface field region with being connected main gate line.
  8. 8. the N-type double-side cell structure of selective back surface field as claimed in claim 7, it is characterised in that：Local back side electricity Extremely line segment, width are 10-100 μm, connect thin grid width as 20 μm -100 μm, and connection main grid width is 0.5mm-1.5mm；Even Connect thin grid and connection main grid is respectively adopted silk-screen printing sintering, conductive adhesive or metal wire and is welded.
CN201720093932.4U 2017-01-24 2017-01-24 The N-type double-side cell structure of selective back surface field Active CN206907775U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024160191A1 (en) * 2023-01-31 2024-08-08 通威太阳能(眉山)有限公司 Solar cell and preparation method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024160191A1 (en) * 2023-01-31 2024-08-08 通威太阳能(眉山)有限公司 Solar cell and preparation method therefor

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