CN105914249B - All back-contact electrodes contact crystal silicon solar batteries structure and preparation method thereof - Google Patents
All back-contact electrodes contact crystal silicon solar batteries structure and preparation method thereof Download PDFInfo
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- CN105914249B CN105914249B CN201610479254.5A CN201610479254A CN105914249B CN 105914249 B CN105914249 B CN 105914249B CN 201610479254 A CN201610479254 A CN 201610479254A CN 105914249 B CN105914249 B CN 105914249B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 93
- 239000010703 silicon Substances 0.000 title claims abstract description 93
- 239000013078 crystal Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 77
- 239000002184 metal Substances 0.000 claims abstract description 77
- 239000004020 conductor Substances 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 28
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 79
- 238000000034 method Methods 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 17
- 239000006071 cream Substances 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000006117 anti-reflective coating Substances 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 description 12
- 238000007650 screen-printing Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- -1 conducting resinl Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000007581 slurry coating method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
A kind of all back-contact electrodes of the present invention contact crystal silicon solar batteries structure and preparation method thereof, include successively from top to bottom：Antireflective coating/passivating film, front N+ doped layers, N-type silicon substrate, back side doped layer, backside passivation film and battery electrode；Wherein, the back side doped layer, which is alternated by N-doped zone with P-doped zone, arranges；The battery electrode includes the localized metallic electrode of array arrangement and thin plain conductor, and localized metallic electrode penetrates the N of backside passivation film and the back side, P-doped zone forms Ohmic contact；Thin plain conductor is combined to form the thin gate line electrode of Hanging sectionally with localized metallic electrode by conductive bonding material；The p-type of cell backside and the opposite end of n-type region are respectively provided with contact conductor, for exporting the electric current collected.The invention avoids the light shielded areas of grid line, and then improve the transfer efficiency of battery, while the usage amount by reducing metal paste makes production cost reduce.
Description
Technical field
The invention belongs to technical field of solar batteries, more particularly to a kind of all back-contact electrodes contact crystal silicon solar batteries knot
Structure and preparation method thereof.
Background technology
From first piece of solar cell in 1954 since AT＆T Labs is born, crystal silicon solar energy battery has obtained extensively
General application, transfer efficiency are constantly promoted, and production cost continues to decline.Currently, crystal silicon solar energy battery accounts for solar cell
The producing line transfer efficiency of 80% or more of overall global market, crystalline silicon battery plate has broken through 20% at present, and global year is newly equipped with
Machine capacity about 50GW and speedup is apparent, constantly reduces with the degree electricity cost of thermal power generation, is expected to maintain an equal level therewith in the coming years.It is brilliant
Body silicon solar cell as a kind of clean energy resource the important function restructured the use of energy, alleviate environmental pressure etc. increasingly
It highlights.
Crystal silicon solar energy battery to promoted competitiveness, obtain bigger development and application, it is necessary to further increase turn
Efficiency is changed, while reducing production cost, especially to reduce the cost for the silver electrode for accounting for battery production cost about 15%.It is brilliant at present
The mode that the electrode of body silicon solar cell mostly uses silver paste silk-screen printing forms nearly hundred thin grid and several main grids, this process
The Material Cost that uses is expensive, and silver electrode can cause the area on cell piece surface 5%~7% to be formed to block light, simultaneously
Lead to resistance loss and recombination loss.
Back-contact cell solves metal grid lines well due to carrying on the back the metal electrode of battery around the back side of battery
Light occlusion issue, but silver or the dosages of other conductive metals are not reduced in electrode, instead than the dosage of conventional batteries
It increased.In addition, the metal electrode contact area in the area P, N is big, few sub probability in the region composite is increased.For this purpose, having
Necessity develops a kind of new electrode structure for back-contact cell, so that the efficiency of this battery is given full play to, drops simultaneously
The Material Cost of low electrode.
Invention content
The object of the present invention is to provide a kind of all back-contact electrodes to contact crystal silicon solar batteries structure and preparation method thereof, adopts
The localized contact metal electrode at the back side is connected to the positive and negative electrode to form battery with thin plain conductor.The invention avoids
The light shielded area of grid line, and then the transfer efficiency of battery is improved, while the usage amount by reducing metal paste makes production
Cost reduction.
To achieve the above object, the present invention uses following technological means：
A kind of all back-contact electrodes contact crystal silicon solar batteries structure, include successively from top to bottom：Front surface antireflection film/passivation
Film, front N+ doped layers, N-type silicon substrate, back side doped layer, backside passivation film and battery electrode；Wherein, back side doping
Layer, which is alternated by p-type doped layer with n-type doping layer, to be arranged；
The battery electrode includes localized contact metal electrode, thin plain conductor and contact conductor；The localized contact
Metal electrode includes positive localized contact metal electrode and cathode localized contact metal electrode；The thin plain conductor includes anode
Thin plain conductor and the thin plain conductor of cathode；The contact conductor includes positive electrode lead and negative electrode lead；Positive part connects
Tactile metal electrode penetrates backside passivation film and forms Ohmic contact with p-type doped layer；Cathode localized contact metal electrode penetrates the back side
Passivating film forms good Ohmic contact with n-type doping layer；Cathode metal conducting wire is connect positive part by conductive bonding material
Tactile metal electrode is connected as the thin gate line electrode of Hanging sectionally of anode, and passes through positive electrode lead derived current；Cathode gold
Belong to the thin grid line electricity of Hanging sectionally that cathode localized contact metal electrode is connected as battery cathode by conductive bonding material by conducting wire
Pole, and pass through negative electrode lead derived current.
As a further improvement on the present invention, the thin plain conductor be copper wire, silver wire, silver-coated copper wire, nickel plated copper wire,
Tinned wird or alloy wire, a diameter of 20~100um of thin plain conductor.
As a further improvement on the present invention, the conductive bonding material is tin cream, Sn-containing alloy, conducting resinl or conduction
Film.
As a further improvement on the present invention, the positive localized contact metal electrode is arranged in p-type with array pattern
On doped layer；The cathode localized contact metal electrode is arranged in array pattern on n-type doping layer.
As a further improvement on the present invention, array pattern is one-dimensional, two-dimentional geometric figure or one-dimensional and two-dimensional geometry figure
The combination of shape；One-dimensional geometric figure is selected from：Line segment, phantom line segments, camber line or grid line shape；Two-dimentional geometric figure is selected from：It is round, oval
Shape, spindle, annular, polygon, polygonal or sector；
The line width of the one-dimensional pattern is 30~200um, and length is 0.05~3mm, the same doping of cell backside
Two neighboring linear spacing is 0.25~2.5mm in bar-shaped zone；The size of the X-Y scheme is 30~200um, battery
The spacing of two neighboring X-Y scheme is 0.25~2.5mm in the bar-shaped zone of the same doping in the back side.
As a further improvement on the present invention, the width of the p-type doped layer and n-type doping layer is 0.2~3mm,
Sheet resistance is 20~120 Ω/；The sheet resistance of the positive N+ doped layers is 40~120 Ω/.
As a further improvement on the present invention, using light texture is fallen into, it is gold that the front, which falls into light texture, on the surface of battery
Word tower, inverted pyramid, Nano/micron porous structure；The thickness of the n type single crystal silicon piece is 100~200um.
As a further improvement on the present invention, front passivating film be aluminum oxide film, silicon oxide film, silicon nitride film,
One or more laminations in silicon oxynitride film, amorphous silicon membrane, thin film of titanium oxide, carborundum films are constituted, passivating film
Integral thickness is 1~50nm；Front surface antireflection film is that silicon nitride film, silicon oxide film, silicon oxynitride film, titanium oxide are thin
One or more laminations in film, carborundum films are constituted, and antireflective coating integral thickness is 50~100nm；The passivating film at the back side
It is one or more folded in silicon oxide film, silicon nitride film, amorphous silicon membrane, silicon oxynitride film, aluminum oxide film
Layer is constituted, and passivating film integral thickness is 20~150nm.
As a further improvement on the present invention, the positive electrode lead and negative electrode lead are separately connected all just superfine
Plain conductor, the thin plain conductor of all cathode, and positive electrode lead and negative electrode lead are separately positioned on the both ends of battery.
A kind of preparation method of all back-contact electrodes contact crystal silicon solar batteries structure, includes the following steps：
(1) surface-texturing processing is carried out to n type single crystal silicon piece；
(2) processing is doped to silicon chip, uniform N+ doped layers is formed in the front of silicon chip；Silicon chip the back side formed P,
N adulterates the back side doped layer for alternating arrangement；
(3) chemical cleaning is carried out to the silicon chip after doping treatment；
(4) passivating film and front surface antireflection film are sequentially depositing in the front of silicon chip；
(5) in the backside deposition backside passivation film of silicon chip；
(6) localized contact metal electricity is made respectively by the P of back side doped layer, n-type region on the passivating film of silicon chip back side
Pole；
(7) drying and processing is carried out；
(8) it is heat-treated, localized contact metal electrode is made to penetrate ohm that backside passivation film is formed with back side doped layer
Contact；
(9) conductive bonding material is made on localized contact metal electrode；
(10) by the line direction drawing of thin plain conductor localized contact metal electrode in p-type doped layer and n-type doping layer
And it is tightly attached on conductive bonding material；
(11) it is heat-treated, so that thin plain conductor is passed through conductive bonding material and be incorporated in one with localized contact metal electrode
It rises, form the positive and negative electrode that battery is arranged alternately.
Beneficial effects of the present invention have the following aspects：The first, using thin plain conductor, instead of back side p-type and N-type
Part silver on the electrode in region, reduces the silver electrode usage amount of rear-face contact crystal silicon battery, to reduce rear-face contact
The manufacturing cost of battery；The second, thin plain conductor has higher grid line depth-width ratio, and is Hanging sectionally structure, this can make
The contact area of metal and silicon substrate reduces, and recombination loss reduces, and then improves the transfer efficiency of battery；Third, this patent
The method for making its electrode is simple, reliable, is suitable for industrialized production.The invention avoids the light shielded areas of grid line, in turn
The transfer efficiency of battery is improved, while the usage amount by reducing metal paste makes production cost reduce.
The preparation method of the present invention carries out in such a way that the structure of battery carries out from inside to outside, and this part may be used
Various ways make, and simple for process, operability is strong.N-type crystalline silicon solar battery structure production method of the present invention
Simply, reliably, it is suitable for industrialized production.
Description of the drawings
Fig. 1 is along the partial cutaway schematic perpendicular to back side P, n-type region length direction.
Fig. 2 is along the partial cutaway schematic for being parallel to back side n-type region length direction.
Fig. 3 is along the partial cutaway schematic for being parallel to back side p type island region length of field direction.
Fig. 4 is the P at the back-contact cell back side, n-type region distribution partial schematic plan view.
Fig. 5 is the partial schematic plan view of backplate.
In figure, 1 is front passivating film/antireflective coating, and 2 be N+ layers；3 be back side doped layer, and 3-1 is back side p-type doped layer,
3-2 is back side n-type doping layer, and 4 be backside passivation film；5 be plain conductor, and 5-1 is cathode metal conducting wire, and 5-2 negative metals are led
Line, 6 be conductive bonding material, and 7 be localized contact metal electrode, and 7-1 is to form the positive part contacted with back side p-type doped layer to connect
Metal electrode is touched, 7-2 is to form the negative localized contact metal electrode contacted with back side n-type doping layer, and 8-1 is positive electrode lead,
8-2 is negative electrode lead, and 9 be N-type silicon substrate.
Specific implementation mode
Below in conjunction with attached drawing embodiment, present invention is further described in detail.
As shown in Fig. 1 to 5, a kind of all back-contact electrodes of the present invention contact crystal silicon solar batteries structure, and the structure of battery is from upper
Include under and：Antireflective coating/passivating film 1, front N+ doped layers 2, N-type silicon substrate 9, back side doped layer 3 (are alternately arranged in the area P, N
Row), backside passivation film 4, battery electrode (positive and negative electrode is alternately arranged).
Wherein, battery just, back electrode be arranged alternately in the back side of battery, electrode is localized contact metal electrode 7 and thin
Plain conductor 5 passes through the thin gate line electrode of Hanging sectionally that conductive bonding material 6 is formed.Localized contact metal electrode 7 is with one-dimensional figure
Shape, X-Y scheme or a peacekeeping two-dimensional combination graphic array are distributed in the N-doped zone 3-2 and P-doped zone 3- of cell backside
1, and penetrate backside passivation film 4 and form good Ohmic contact with silicon substrate 9；Thin plain conductor 5 (copper wire, silver wire, silver-plated copper
Line, nickel plated copper wire, tinned wird or alloy wire) pass through conductive bonding material 6 (tin cream, conducting resinl, Sn-containing alloy or conductive thin
Film) it is tied with localized contact metal electrode 7 (silver electrode, aluminium electrode, nickel electrode, copper electrode, alloy electrode or metal composite electrode)
It is combined, forms the conductive composition body of an alternative thin grid line of conventional batteries.The p-type of cell backside and the phase of n-type region
Opposite end is respectively provided with contact conductor 8-1 and 8-2, for exporting the electric current collected.
The present invention provides a kind of all back-contact electrodes to contact crystal silicon solar batteries structure, and preparation method can be as follows
It carries out：
(1) by n type single crystal silicon piece carry out surface-texturing processing, texture processing may be used chemical liquid burn into etc. from
The methods of son etching, nano metal catalysis, laser ablation.
(2) processing is doped to silicon chip, forms uniform N+ doped layers in the front of silicon chip, impurity source can be
POCl3、PH3, phosphoric acid, P2O5, containing phosphorus dopant etc., the method for making has ion implanting, low pressure diffusion, normal pressure diffusion, impurity slurry
Material coating collaboration heat treatment, doped dielectric film collaboration heat treatment etc., sheet resistance is 40~120 Ω/；At the back side shape interval of silicon chip
The P that is arranged alternately, N-type diffusion region, p type impurity source can be BBr3、BF3、BCl3、B2O3、B2H6, boron doped agent etc., N-type is miscellaneous
Matter source can be POCl3、PH3, phosphoric acid, P2O5, containing phosphorus dopant etc., the method for making has ion implanting, secondary thermal diffusion, phosphorus
Boron spreads altogether, impurity slurry coating collaboration heat treatment, doped dielectric film collaboration heat treatment etc., the P being arranged alternately, N-doped zone
Sheet resistance be 20~120 Ω/.
(3) chemical cleaning is carried out to the silicon chip after doping treatment.
(4) antireflective coating 1 of the passivating film and 50~100nm of 1~50nm is sequentially depositing in the front of silicon chip；In silicon chip
The passivating film 4 of 20~150nm of backside deposition.Passivating film can be aluminium oxide, silica, non-crystalline silicon, silicon nitride, silicon oxynitride etc.
One or more film combinations of film；Antireflective coating can be silicon nitride, silica, silicon oxynitride, titanium oxide, silicon carbide etc.
One or more pellicular cascades of film.
(5) the positive localized contact metal electrode 7-1 that specific figure makes array arrangement on P-doped zone 3-1 is pressed；
The cathode localized contact metal electrode 7-2 of array arrangement is made on N-doped zone 3-2 by specific figure.Localized contact gold
It can be silver electrode, aluminium electrode, nickel electrode, copper electrode, alloy electrode or metal composite electrode to belong to electrode, and production method can adopt
With silk-screen printing, steel plate printing, ink-jet, 3D printing, laser transfer, laser or chemical attack collaboration vapor deposition, plating, photo-induction
Lead the methods of plating.The array pattern of positive localized contact metal electrode 7-1 and cathode localized contact metal electrode 7-2 be it is one-dimensional,
Two-dimentional geometric figure or one-dimensional and two-dimentional geometric figure combination；One-dimensional geometric figure is selected from：Line segment, phantom line segments or camber line；Two
Dimension geometric figure is selected from：Circle, ellipse, spindle, annular, polygon, polygonal or sector.The line of the one-dimensional pattern
Width is 30~200um, and length is 0.05~3mm, in the bar-shaped zone of the same doping of cell backside it is two neighboring it is linear between
Away from for 0.25~2.5mm；The size of the X-Y scheme is 30~200um, in the bar-shaped zone of the same doping of cell backside
The spacing of two neighboring X-Y scheme is 0.25~2.5mm.
(6) it is dried at 200~300 DEG C.
(7) it is heat-treated at 300~900 DEG C, localized contact metal electrode 7 is made to penetrate backside passivation film 4 and the back side
Doped layer (3) forms good Ohmic contact.
(8) conductive bonding material 6 is made on the localized contact metal electrode 7 of p-type and N-doped zone, conduction combines material
Material 6 is tin cream, conducting resinl, Sn-containing alloy or conductive film etc., and printing, ink-jet, thermocompression bonding, ultrasound may be used in the method for making
Weldering, spot welding or stickup etc..
(9) thin plain conductor 5 is aligned in along the line direction of the localized metallic electrode of p-type and n-type region conductive in conjunction with material
On material 6, thin plain conductor 5 is copper wire, silver wire, silver-coated copper wire, nickel plated copper wire, tinned wird or alloy wire, thin plain conductor 5
A diameter of 20~100um.
(10) thin plain conductor 5 is made to pass through conductive bonding material 6 and 7 knot of localized contact metal electrode at 100~400 DEG C
It is combined, forms a conductive composition body that can be used as back-contact cell positive and negative electrode.
Conductive bonding material 6 is tin cream, Sn-containing alloy, conducting resinl or conductive film, conductive bonding material 6 and localized contact
The method that metal electrode 7 connects has silk-screen printing collaboration heat treatment, ink-jet collaboration heat treatment, thermocompression bonding, ultrasonic bond, spot welding and glues
Patch.
With reference to specific embodiment, the present invention will be further described：
Embodiment 1：
(1) the incorgruous corrosion in 80 DEG C or so of KOH solution by n type single crystal silicon piece obtains surface pyramid structure.
(2) in the interdigitated diffusion mask layer of one layer of boracic of the back up of silicon chip, then 750~850 DEG C or so into
Row p-doped thermal diffusion, the boron on mask layer enters silicon substrate after diffusion and forms p-type doped layer, and the area of non-printing mask floor
Domain forms n-type doping layer after phosphorus diffusion.The width of the back side single p-type doping slab region is 500um, and sheet resistance is 70 Ω/；
The width of the single n-type doping slab region in the back side is 300um, and sheet resistance is 70 Ω/.This process is formed in the front of silicon chip simultaneously
The N+ doped layers of 100 Ω/.
(3) method of wet etching is used to remove the phosphorosilicate glass and Pyrex in front and the back side.
(4) silica for depositing 20nm respectively with the back side in the front of silicon chip, later again in the silicon oxide film of front side of silicon wafer
The silicon nitride of upper deposition 50nm.
(5) method for using silk-screen printing makes array point by specific figure in the p-type and n-type region of silicon chip back side
The localized contact metal electrode of cloth, printed pattern use spotted array, and a diameter of 60um of a single point, cell backside is same to be mixed
The spacing of two neighboring X-Y scheme is 250um in miscellaneous bar-shaped zone.
(6) it is dried at 200~300 DEG C.
(7) it is heat-treated at 300~900 DEG C, the localized contact metal electrode of array distribution is made to penetrate passivating back
Film forms good Ohmic contact with the P at the back side, n-type region.
(8) method of silk-screen printing is used to make tin cream on localized contact metal electrode.
(9) by thin tinned wird along the line direction drawing of back side p-type and the localized contact metal electrode in n-type region and tight
It is attached on tin cream, a diameter of 40um of thin tinned wird.The side of the thin tinned wird of back side p-type and n-type region and silicon chip
Edge flushes, and the other side grows about 3mm than silicon chip edge, respectively as positive and negative electrode lead.
(10) make thin tinned wird pass through tin cream at 100~400 DEG C to be combined together with localized contact metal electrode, shape
The conductive composition body that can be used as back-contact cell positive and negative electrode at one.
Embodiment 2：
(1) the incorgruous corrosion in 80 DEG C or so of KOH solution by n type single crystal silicon piece obtains surface pyramid structure.
(2) the alternatively distributed p-type doped layer of finger-like and n-type doping are formed using the method for ion implanting in silicon chip back side
The width of layer, the back side single p-type doping slab region is 1mm, and sheet resistance is 50 Ω/；The width of the single n-type doping slab region in the back side
For 0.5mm, sheet resistance is 50 Ω/.The N+ doped layers of 80 Ω/ are prepared using the method for ion implanting in the front of silicon chip.
(3) silicon chip after ion implanting is made annealing treatment.
(4) chemical cleaning is carried out to silicon chip.
(5) in the silica of the front deposition 90nm of silicon chip, the silica of 30nm is overleaf deposited.
(6) method for using steel plate printing makes array point by specific figure in the p-type and n-type region of silicon chip back side
The figure of the localized contact metal electrode of cloth, printing uses line segment shape array.The bar-shaped zone of the same p-type doping of cell backside
Interior, the width of array line segment is 40um, the spacing of length 800um, two neighboring line segment is 1mm；The same N-type of cell backside
In the bar-shaped zone of doping, the width of array line segment is 40um, the spacing of length 400um, two neighboring line segment is 1mm.
(7) it is dried at 200~300 DEG C.
(8) it is heat-treated at 300~900 DEG C, the localized contact metal electrode of array distribution is made to penetrate passivating back
Film forms good Ohmic contact with the P at the back side, n-type region.
(9) method of silk-screen printing is used to make tin cream on localized contact metal electrode.
(10) the line direction drawing of the localized contact metal electrode by thin silver-coated copper wire in back side p-type and n-type region is simultaneously
It is tightly attached on tin cream, a diameter of 50um of thin silver-coated copper wire.The side of the thin silver-coated copper wire of back side p-type and n-type region and silicon
Piece edge flushes, and the other side grows about 3mm than silicon chip edge, respectively as positive and negative electrode lead.
(11) make thin silver-coated copper wire pass through tin cream at 100~400 DEG C to be combined together with localized contact metal electrode, shape
The conductive composition body that can be used as back-contact cell positive and negative electrode at one.
Embodiment 3：
(1) the incorgruous corrosion in 80 DEG C or so of KOH solution by n type single crystal silicon piece obtains surface pyramid structure.
(2) in the interdigitated diffusion mask layer of one layer of boracic of the back up of silicon chip, then 750~950 DEG C or so into
Row thermal diffusion, the boron on mask layer enters silicon substrate after diffusion and forms p-type doped layer, and the region of non-printing mask layer, warp
N-type doping layer is formed after phosphorus diffusion, P, N doped layer are arranged alternately in the back side of silicon chip.The width of the single P doping bar-shaped zone in the back side
Degree is 2mm, and sheet resistance is 60 Ω/；The width of the single N doping bar-shaped zone in the back side is 1mm, and sheet resistance is 60 Ω/.This process is same
When silicon chip front formed 90 Ω/ N+ doped layers.
(3) method of wet etching is used to remove the phosphorosilicate glass and Pyrex in front and the back side.
(4) in the silicon nitride of the front deposition 80nm of silicon chip, the aluminium oxide and 50nm of 5nm are successively deposited at the back side of silicon chip
Silicon nitride.
(5) method for using silk-screen printing makes array point by specific figure in the p-type and n-type region of silicon chip back side
The localized contact metal electrode of cloth, printed pattern use line segment shape array.The bar-shaped zone of the same p-type doping of cell backside
Interior, the width of array line segment is 50um, the spacing of length 1.8mm, two neighboring line segment is 1.5mm；The same N of cell backside
In the bar-shaped zone of type doping, the width of array line segment is 50um, the spacing of length 800um, two neighboring line segment is 1mm.
(6) it is dried at 200~300 DEG C.
(7) it is heat-treated at 300~900 DEG C, the localized contact metal electrode of array distribution is made to penetrate passivating back
Film forms good Ohmic contact with the P at the back side, n-type doping region.
(8) use silk-screen printing respectively P, n-type region localized contact metal electrode on make tin cream.
(9) thin tinned wird along back side p-type and the line direction drawing of the localized contact silver electrode in n-type region and is close to
On tin cream, a diameter of 60um of thin tinned wird.The side of the thin tinned wird of back side p-type and n-type region and silicon chip side
Edge flushes, and the other side grows about 3mm than silicon chip edge, respectively as positive and negative electrode lead.
(10) make thin tinned wird pass through tin cream at 100~400 DEG C to be combined together with localized metallic electrode, form one
A conductive composition body that can be used as back-contact cell positive and negative electrode.
Embodiment 4：
(1) by the incorgruous corrosion in 80 DEG C or so of KOH solution by n type single crystal silicon piece, surface pyramid structure is obtained.
(2) the alternatively distributed p-type doped layer of finger-like and n-type doping are formed using the method for ion implanting in silicon chip back side
The width of layer, the single p-type doping bar-shaped zone in the back side is 1.5mm, and sheet resistance is 40 Ω/；The single N doping bar-shaped zone in the back side
Width is 0.5mm, and sheet resistance is 40 Ω/.This process prepares 80 Ω/ in the front of silicon chip using the method for ion implanting simultaneously
N+ doped layers.
(3) silicon chip after ion implanting is made annealing treatment.
(4) chemical cleaning is carried out to silicon chip.
(5) in the silica of the front deposition 80nm of silicon chip, the silica of 50nm is deposited in silicon chip back side.
(6) method for using silk-screen printing makes array point by specific figure in the p-type and n-type region of silicon chip back side
The localized contact metal electrode of cloth, printed pattern use line segment shape array.The bar-shaped zone of the same p-type doping of cell backside
Interior, the width of array line segment is 30um, the spacing of length 1.3mm, two neighboring line segment is 1mm；The same N-type of cell backside
In the bar-shaped zone of doping, the width of array line segment is 30um, the spacing of length 300um, two neighboring line segment is 300um.
(7) it is dried at 200~300 DEG C.
(8) it is heat-treated at 300~900 DEG C, the localized contact metal electrode of array distribution is made to penetrate passivating back
Film forms good Ohmic contact with the P at the back side, n-type region.
(9) use laser transfer method respectively P, n-type region localized contact metal electrode on make tin cream.
(10) the line direction drawing of the localized contact metal electrode by thin nickel plated copper wire in back side p-type and n-type region is simultaneously
It is tightly attached on tin cream, a diameter of 30um of thin nickel plated copper wire.The side of the thin nickel plated copper wire of back side p-type and n-type region and silicon
Piece edge flushes, and the other side grows about 3mm than silicon chip edge, respectively as positive and negative electrode lead.
(11) make thin nickel plated copper wire pass through tin cream at 100~400 DEG C to be combined together with localized contact metal electrode, shape
The conductive composition body that can be used as back-contact cell positive and negative electrode at one.
The foregoing is merely one embodiment of the present invention, it is not all of or unique embodiment, this field is common
Any equivalent transformation that technical staff takes technical solution of the present invention by reading description of the invention, is power of the present invention
Profit requires to be covered.
Claims (9)
1. a kind of all back-contact electrodes contact crystal silicon solar batteries structure, which is characterized in that include successively from top to bottom：Positive anti-reflection
Penetrate film/passivating film (1), front N+ doped layers (2), N-type silicon substrate (9), back side doped layer (3), backside passivation film (4) and battery
Electrode；Wherein, the back side doped layer (3) arrangement alternated by p-type doped layer (3-1) and n-type doping layer (3-2) and
At；The independent sub-electrode of setting in each individually p-type doped layer (3-1), n-type doping layer (3-2)；
The battery electrode includes localized contact metal electrode (7), thin plain conductor (5) and contact conductor (8)；The part
Contacting metal electrode (7) includes positive localized contact metal electrode (7-1) and cathode localized contact metal electrode (7-2)；It is described
Thin plain conductor (5) includes just superfine plain conductor (5-1) and the thin plain conductor of cathode (5-2)；The contact conductor (8) includes
Positive electrode lead (8-1) and negative electrode lead (8-2)；Positive localized contact metal electrode (7-1) penetrate backside passivation film (4) with
P-type doped layer (3-1) forms Ohmic contact；Cathode localized contact metal electrode (7-2) penetrates backside passivation film (4) and is mixed with N-type
Diamicton (3-2) forms Ohmic contact；Cathode metal conducting wire (5-1) is by conductive bonding material (6) by positive localized contact metal
Electrode (7-1) is connected as the thin gate line electrode of Hanging sectionally of anode, and passes through positive electrode lead (8-1) derived current；It is negative
Cathode localized contact metal electrode (7-2) is connected as battery cathode by pole plain conductor (5-2) by conductive bonding material (6)
The thin gate line electrode of Hanging sectionally, and pass through negative electrode lead (8-2) derived current；
The positive localized contact metal electrode (7-1) is arranged in array pattern on p-type doped layer (3-1)；Described
Cathode localized contact metal electrode (7-2) is arranged in array pattern on n-type doping layer (3-2)；
Thin plain conductor (5) is along p-type doped layer and the line direction drawing of localized contact metal electrode (7) in n-type doping layer and tight
It is attached on conductive bonding material (6).
2. a kind of all back-contact electrodes according to claim 1 contact crystal silicon solar batteries structure, which is characterized in that described
Thin plain conductor (5) is copper wire, silver wire, silver-coated copper wire, nickel plated copper wire, tinned wird or alloy wire, thin plain conductor (5) it is straight
Diameter is 20~100um.
3. a kind of all back-contact electrodes according to claim 1 contact crystal silicon solar batteries structure, which is characterized in that described
Conductive bonding material (6) is tin cream, Sn-containing alloy, conducting resinl or conductive film.
4. a kind of all back-contact electrodes according to claim 1 contact crystal silicon solar batteries structure, which is characterized in that array of figure
Case is one-dimensional, two-dimentional geometric figure or one-dimensional and two-dimentional geometric figure combination；One-dimensional geometric figure is selected from：Line segment, camber line；Two
Dimension geometric figure is selected from：Annular, polygon, polygonal or sector；
The line width of the one-dimensional pattern is 30~200um, and length is 0.05~3mm, the bar shaped of the same doping of cell backside
Two neighboring linear spacing is 0.25~2.5mm in region；The size of the X-Y scheme is 30~200um, cell backside
The spacing of two neighboring X-Y scheme is 0.25~2.5mm in the bar-shaped zone of the same doping.
5. a kind of all back-contact electrodes according to claim 1 contact crystal silicon solar batteries structure, which is characterized in that described
The width of p-type doped layer (3-1) and n-type doping layer (3-2) is 0.2~3mm, and sheet resistance is 20~120 Ω/；It is described just
The sheet resistance of face N+ doped layers (2) is 40~120 Ω/.
6. a kind of all back-contact electrodes according to claim 1 contact crystal silicon solar batteries structure, which is characterized in that battery
Using light texture is fallen into, it is pyramid, inverted pyramid, Nano/micron porous structure that the front, which falls into light texture, on surface；The N
The thickness of type monocrystalline silicon piece is 100~200 μm.
7. a kind of all back-contact electrodes according to claim 1 contact crystal silicon solar batteries structure, which is characterized in that front is blunt
Change film is aluminum oxide film, silicon oxide film, silicon nitride film, silicon oxynitride film, amorphous silicon membrane, thin film of titanium oxide, carbon
One or more laminations in SiClx film are constituted, and the integral thickness of passivating film is 1~50nm；Front surface antireflection film is silicon nitride
One or more laminations in film, silicon oxide film, silicon oxynitride film, thin film of titanium oxide, carborundum films are constituted, anti-reflection
It is 50~100nm to penetrate film integral thickness；The passivating film at the back side is silicon oxide film, silicon nitride film, amorphous silicon membrane, nitrogen oxidation
One or more laminations in silicon thin film, aluminum oxide film are constituted, and passivating film integral thickness is 20~150nm.
8. a kind of all back-contact electrodes according to claim 1 contact crystal silicon solar batteries structure, which is characterized in that described
It is carefully golden that positive electrode lead (8-1) and negative electrode lead (8-2) are separately connected all just superfine plain conductors (5-1), all cathode
Belong to conducting wire (5-2), and positive electrode lead (8-1) and negative electrode lead (8-2) are separately positioned on the both ends of battery.
9. the preparation side of all back-contact electrodes contact crystal silicon solar batteries structure described in a kind of any one of claim 1~8
Method, which is characterized in that include the following steps：
(1) surface-texturing processing is carried out to n type single crystal silicon piece；
(2) processing is doped to silicon chip, uniform N+ doped layers (2) is formed in the front of silicon chip；P, N are formed at the back side of silicon chip
Doping alternates the back side doped layer (3) of arrangement；
(3) chemical cleaning is carried out to the silicon chip after doping treatment；
(4) passivating film and front surface antireflection film (1) are sequentially depositing in the front of silicon chip；
(5) in the backside deposition backside passivation film (4) of silicon chip；
(6) localized contact metal is made respectively by the P of back side doped layer (3), n-type region on the passivating film of silicon chip back side (4)
Electrode (7)；
(7) drying and processing is carried out；
(8) it is heat-treated, localized contact metal electrode (7) is made to penetrate what backside passivation film (4) was formed with back side doped layer (3)
Ohmic contact；
(9) conductive bonding material (6) is made on localized contact metal electrode (7)；
(10) line direction of thin plain conductor (5) localized contact metal electrode (7) in p-type doped layer and n-type doping layer is drawn
It pulls out and is tightly attached on conductive bonding material (6)；
(11) it is heat-treated, thin plain conductor (5) is made to be tied by conductive bonding material (6) and localized contact metal electrode (7)
It is combined, forms the positive and negative electrode that battery is arranged alternately.
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| CN106981537B (en) * | 2017-04-05 | 2019-05-24 | 南昌大学 | A kind of Si/TiO applied to crystal-silicon solar cellxStructure |
| CN106981523B (en) * | 2017-04-05 | 2019-05-24 | 南昌大学 | A kind of double-deck TiO applied to rear-face contact solar cellxStructure |
| CN106981544A (en) * | 2017-04-10 | 2017-07-25 | 泰州中来光电科技有限公司 | The preparation method and battery and its component, system of full back contact solar cell |
| CN109560146B (en) * | 2017-09-22 | 2021-02-23 | 比亚迪股份有限公司 | Battery with a battery cell |
| CN115440832A (en) * | 2021-06-03 | 2022-12-06 | 隆基绿能科技股份有限公司 | Solar cell metal electrode and preparation method thereof |
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| CN104576778A (en) * | 2015-01-05 | 2015-04-29 | 苏州中来光伏新材股份有限公司 | Main-grid-free efficient back-contact solar battery and assembly and manufacturing technology thereof |
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