CN105914249A - Full back electrode contact crystalline silicon solar cell structure and preparation method thereof - Google Patents
Full back electrode contact crystalline silicon solar cell structure and preparation method thereof Download PDFInfo
- Publication number
- CN105914249A CN105914249A CN201610479254.5A CN201610479254A CN105914249A CN 105914249 A CN105914249 A CN 105914249A CN 201610479254 A CN201610479254 A CN 201610479254A CN 105914249 A CN105914249 A CN 105914249A
- Authority
- CN
- China
- Prior art keywords
- film
- contact
- type
- metal electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 91
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 91
- 239000010703 silicon Substances 0.000 claims abstract description 91
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
- 239000002184 metal Substances 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000002161 passivation Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 74
- 238000000034 method Methods 0.000 claims description 34
- 239000004020 conductor Substances 0.000 claims description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 22
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 18
- 239000006071 cream Substances 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 229910001111 Fine metal Inorganic materials 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 48
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 238000009826 distribution Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 8
- 238000007639 printing Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000006117 anti-reflective coating Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- -1 conducting resinl Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007581 slurry coating method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a full back electrode contact crystalline silicon solar cell structure and a preparation method thereof. The full back electrode contact crystalline silicon solar cell structure sequentially comprises an antireflection film/passivation film, a front N+ doping layer, an N-type silicon substrate, a back doping layer, a back passivation film and cell electrodes from top to bottom, wherein the back doping layer is formed by alternately arranging N-type doping regions and P-type doping regions at intervals; each cell electrode comprises local metal electrodes arranged in an array and fine metal guide wires; the local metal electrodes penetrate through the back passivation film; the local metal electrodes and the N-type doping regions and the P-type doping regions on the back surface form ohmic contact; the fine metal guide wires are combined with the local metal electrodes through a conductive bonding material to form local suspended fine grid line electrodes; and electrode leads are arranged at opposite ends of the P-type regions and the N-type regions on the back surface of a cell respectively and are used for exporting collected current. By the full back electrode contact crystalline silicon solar cell structure, the light shade area of grid lines is avoided, so that the conversion efficiency of the cell is improved; and meanwhile, the production cost is reduced by reducing the usage amount of metal paste.
Description
Technical field
The invention belongs to technical field of solar batteries, particularly to a kind of all back-contact electrodes contact crystal silicon solar batteries structure and system thereof
Preparation Method.
Background technology
From first piece of solaode in 1954 since being born in AT&T Labs, crystal silicon solar energy battery has obtained widely should
With, conversion efficiency constantly promotes, production cost continuous decrease.At present, crystal silicon solar energy battery accounts for solaode world market
More than the 80% of total value, the product line conversion efficiency of crystalline silicon battery plate has broken through 20% the most, and whole world year adding new capacity is about
50GW and speedup are obvious, constantly reduce with the degree electricity cost of thermal power generation, are expected to maintain an equal level therewith in the coming years.The crystalline silicon sun
Can day by day highlight in the important function of the aspects such as ambient pressure of restructuring the use of energy, alleviate as a kind of clean energy resource by battery.
Crystal silicon solar energy battery wants to promote competitiveness, obtain bigger development and application, it is necessary to improve conversion efficiency further,
Reduce production cost simultaneously, especially to reduce the cost of the silver electrode accounting for battery production cost about 15%.Crystal silicon solar at present
The electrode of the battery mode using silver slurry silk screen printing forms nearly hundred thin grid and some main grids more, the Material Cost that this operation uses
Costliness, and silver electrode can cause the area on cell piece surface 5%～7% to be formed to block light, also results in resistance loss with compound
Loss.
Back-contact cell is owing to carrying on the back the metal electrode of battery around the back side of battery, and the light well solving metal grid lines blocks
Problem, but in electrode, the consumption of silver or other conducting metals does not reduce, and increased than the consumption of conventional batteries on the contrary.This
Outward, the metal electrode contact area in P, N district is big, adds few son probability in this region composite.For this reason, it is necessary to for the back of the body
A kind of new electrode structure developed by face contact battery, makes the efficiency of this battery obtain and gives full play to, and the material simultaneously reducing electrode becomes
This.
Summary of the invention
It is an object of the invention to provide a kind of all back-contact electrodes contact crystal silicon solar batteries structure and preparation method thereof, use thin metal
Wire the localized contact metal electrode at the back side is coupled together formed battery positive and negative electrode.The light that present invention, avoiding grid line blocks
Area, and then improve the conversion efficiency of battery, the usage amount by reducing metal paste makes production cost reduce simultaneously.
For achieving the above object, the present invention uses techniques below means:
A kind of all back-contact electrodes contact crystal silicon solar batteries structure, includes the most successively: front surface antireflection film/passivating film, just
Face N+ doped layer, N-type silicon substrate, back side doped layer, backside passivation film and battery electrode；Wherein, described back side doped layer
Formed every alternately arranged with n-type doping interlayer by p-type doped layer；
Described battery electrode includes localized contact metal electrode, thin plain conductor and contact conductor；Described localized contact metal electrode
Including positive pole localized contact metal electrode and negative pole localized contact metal electrode；Described thin plain conductor include the most superfine plain conductor and
The thin plain conductor of negative pole；Described contact conductor includes positive electrode lead and negative electrode lead；Positive pole localized contact metal electrode penetrates the back of the body
Face passivating film forms Ohmic contact with p-type doped layer；Negative pole localized contact metal electrode penetrates backside passivation film and n-type doping layer
Form good Ohmic contact；Positive pole localized contact metal electrode is just being connected as battery by conductive bonding material by cathode metal wire
The thin gate line electrode of Hanging sectionally of pole, and by positive electrode lead derived current；Negative metal wire will be negative by conductive bonding material
Pole localized contact metal electrode is connected as the thin gate line electrode of Hanging sectionally of battery cathode, and by negative electrode lead derived current.
As a further improvement on the present invention, described thin plain conductor is copper cash, silver wire, silver-coated copper wire, nickel plated copper wire, tin plating
Copper cash or alloy wire, a diameter of the 20 of thin plain conductor～100um.
As a further improvement on the present invention, described conductive bonding material is tin cream, Sn-containing alloy, conducting resinl or conductive film.
As a further improvement on the present invention, described positive pole localized contact metal electrode with array pattern be arranged in p-type doped layer it
On；Described negative pole localized contact metal electrode is arranged on n-type doping layer with array pattern.
As a further improvement on the present invention, array pattern is one-dimensional, two-dimentional geometric figure or one-dimensional and two-dimentional geometric figure combination；
One-dimensional geometric figure is selected from: line segment, phantom line segments, camber line or grid line shape；Two-dimentional geometric figure is selected from: circular, oval, spindle
Shape, annular, polygon, polygon or sector；
The live width of described one-dimensional pattern is 30～200um, a length of 0.05～3mm, the slab region of the same doping of cell backside
In territory, adjacent two linear spacing are 0.25～2.5mm；The size of described X-Y scheme is 30～200um, and cell backside is same
In the bar-shaped zone of individual doping, the spacing of adjacent two X-Y schemes is 0.25～2.5mm.
As a further improvement on the present invention, described p-type doped layer is 0.2～3mm with the width of n-type doping layer, sheet resistance
It is 20～120 Ω/；The sheet resistance of described front N+ doped layer is 40～120 Ω/.
As a further improvement on the present invention, the surface of battery uses and falls into light texture, and described front falls into light texture and is pyramid, falls
Pyramid, Nano/micron loose structure；The thickness of described n type single crystal silicon sheet is 100～200um.
As a further improvement on the present invention, front passivating film is aluminum oxide film, silicon oxide film, silicon nitride film, nitrogen oxidation
One or more laminations in silicon thin film, amorphous silicon membrane, thin film of titanium oxide, carborundum films are constituted, the integral thickness of passivating film
It is 1～50nm；Front surface antireflection film is silicon nitride film, silicon oxide film, silicon oxynitride film, thin film of titanium oxide, carborundum
One or more laminations in thin film are constituted, and antireflective coating integral thickness is 50～100nm；The passivating film at the back side be silicon oxide film,
One or more laminations in silicon nitride film, amorphous silicon membrane, silicon oxynitride film, aluminum oxide film are constituted, and passivating film is whole
Body thickness is 20～150nm.
As a further improvement on the present invention, described positive electrode lead and negative electrode lead connect respectively the most superfine all plain conductor,
The thin plain conductor of all negative poles, and positive electrode lead and negative electrode lead be separately positioned on the two ends of battery.
The preparation method of a kind of all back-contact electrodes contact crystal silicon solar batteries structure, comprises the following steps:
(1) n type single crystal silicon sheet is carried out surface-texturing process；
(2) silicon chip is doped process, forms homogeneous N+ doped layer in the front of silicon chip；P, N is formed at the back side of silicon chip
The back side doped layer that doping interval is arranged alternately；
(3) silicon chip after doping treatment is carried out Chemical cleaning；
(4) front at silicon chip is sequentially depositing passivating film and front surface antireflection film；
(5) in the backside deposition backside passivation film of silicon chip；
(6) on the passivating film of silicon chip back side, localized contact metal electrode is made respectively by the P of back side doped layer, N-type region territory；
(7) drying and processing is carried out；
(8) carry out heat treatment, make localized contact metal electrode penetrate the Ohmic contact that backside passivation film is formed with back side doped layer；
(9) on localized contact metal electrode, conductive bonding material is made；
(10) thin plain conductor is the tightest with the line direction drawing of localized contact metal electrode on n-type doping layer along p-type doped layer
It is attached on conductive bonding material；
(11) carry out heat treatment, make thin plain conductor be combined with localized contact metal electrode by conductive bonding material,
Form the positive and negative electrode that battery is arranged alternately.
Beneficial effects of the present invention has the following aspects: the first, uses thin plain conductor, instead of back side p-type and N-type region
Part silver on the electrode in territory, reduces the silver electrode usage amount of rear-face contact crystal silicon battery, thus reduces back-contact cell
Manufacturing cost；The second, thin plain conductor has higher grid line depth-width ratio, and is Hanging sectionally structure, and this can make metal and silicon
The contact area of matrix reduces, and recombination loss reduces, and then improves the conversion efficiency of battery；3rd, the electrode described in this patent
Manufacture method is simple, reliable, is suitable to industrialized production.Present invention, avoiding the light shielded area of grid line, and then improve battery
Conversion efficiency, the usage amount by reducing metal paste makes production cost reduce simultaneously.
The preparation method of the present invention, carries out mode from inside to outside according to the structure of battery and carries out, and this part can use various ways
Making, technique is simple, workable.N-type crystalline silicon solar battery structure manufacture method of the present invention is simple, can
Lean on, be suitable to industrialized production.
Accompanying drawing explanation
Fig. 1 is along being perpendicular to back side P, the partial cutaway schematic in N-type region length of field direction.
Fig. 2 is along the partial cutaway schematic being parallel to N-type region length of field direction, the back side.
Fig. 3 is along the partial cutaway schematic being parallel to length of field direction, p type island region, the back side.
Fig. 4 is the P at the back-contact cell back side, N-type area distribution part plan schematic diagram.
Fig. 5 is the part plan schematic diagram of backplate.
In figure, 1 is front passivating film/antireflective coating, and 2 is N+ layer；3 is back side doped layer, and 3-1 is back side p-type doped layer,
3-2 is back side n-type doping layer, and 4 is backside passivation film；5 is plain conductor, and 5-1 is cathode metal wire, 5-2 negative metal
Wire, 6 is conductive bonding material, and 7 is localized contact metal electrode, and 7-1 is to form, with back side p-type doped layer, the positive office contacted
Portion's contacting metal electrode, 7-2 is to form, with back side n-type doping layer, the negative localized contact metal electrode contacted, and 8-1 is that anelectrode draws
Line, 8-2 is negative electrode lead, and 9 is N-type silicon substrate.
Detailed description of the invention
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
As Fig. 1 is to shown in 5, and one all back-contact electrodes of the present invention contact crystal silicon solar batteries structure, the structure of battery is wrapped from top to bottom
Include: antireflective coating/passivating film 1, front N+ doped layer 2, N-type silicon substrate 9, back side doped layer 3 (P, N district is alternately arranged),
Backside passivation film 4, battery electrode (positive and negative electrode is alternately arranged).
Wherein, battery just, back electrode be arranged alternately in the back side of battery, electrode is localized contact metal electrode 7 and thin metal is led
The thin gate line electrode of Hanging sectionally that line 5 is formed by conductive bonding material 6.Localized contact metal electrode 7 is with one-dimensional pattern, two dimension
Figure or a peacekeeping two-dimensional combination graphic array are distributed in the n-type doping district 3-2 and p-type doped region 3-1 of cell backside, and penetrate
Backside passivation film 4 and silicon substrate 9 form good Ohmic contact；Thin plain conductor 5 (copper cash, silver wire, silver-coated copper wire, nickel plating
Copper cash, tinned wird or alloy wire) by conductive bonding material 6 (tin cream, conducting resinl, Sn-containing alloy or conductive film) and office
Portion's contacting metal electrode 7 (silver electrode, aluminum electrode, nickel electrode, copper electrode, alloy electrode or metal composite electrode) is combined in one
Rise, form the conductive composition body of a thin grid line of alternative conventional batteries.The p-type of cell backside is each with the opposite end in N-type region territory
It is provided with contact conductor 8-1 and 8-2, derives for the electric current that will collect.
The invention provides a kind of all back-contact electrodes contact crystal silicon solar batteries structure, its preparation method can be carried out as follows:
(1) n type single crystal silicon sheet carrying out surface-texturing process, texture processes and chemical liquid burn into plasma can be used to carve
The methods such as erosion, nano metal catalysis, laser ablation.
(2) silicon chip being doped process, form homogeneous N+ doped layer in the front of silicon chip, impurity source can be POCl3、
PH3, phosphoric acid, P2O5, containing phosphorus dopant etc., the method for making have ion implanting, low pressure diffusion, normal pressure diffusion, impurity slurry be coated with
Apply collaborative heat treatment, doped dielectric film works in coordination with heat treatment etc., and sheet resistance is 40～120 Ω/；Shape interval, the back side alternately row at silicon chip
The P of cloth, N-type diffusion region, p type impurity source can be BBr3、BF3、BCl3、B2O3、B2H6, boron doped agent etc., N
N dopant source n can be POCl3、PH3, phosphoric acid, P2O5, containing phosphorus dopant etc., the method for making has ion implanting, second heat to expand
Dissipate, phosphorus boron spreads altogether, impurity slurry coating works in coordination with heat treatment, doped dielectric film works in coordination with heat treatment etc., the P that is arranged alternately, N-type
The sheet resistance of doped region is 20～120 Ω/.
(3) silicon chip after doping treatment is carried out Chemical cleaning.
(4) front at silicon chip is sequentially depositing the passivating film of 1～50nm and the antireflective coating 1 of 50～100nm；The back of the body at silicon chip
The passivating film 4 of face deposition 20～150nm.Passivating film can be aluminium oxide, silicon oxide, non-crystalline silicon, silicon nitride, silicon oxynitride etc.
One or more film combinations of thin film；Antireflective coating can be silicon nitride, silicon oxide, silicon oxynitride, titanium oxide, carborundum etc.
One or more pellicular cascades of thin film.
(5) on p-type doped region 3-1, the positive pole localized contact metal electrode 7-1 of array arrangement is made by specific figure；By spy
Fixed figure makes the negative pole localized contact metal electrode 7-2 of array arrangement on n-type doping district 3-2.Localized contact metal electrode
Can be silver electrode, aluminum electrode, nickel electrode, copper electrode, alloy electrode or metal composite electrode, manufacture method can use silk screen
Vapour deposition, plating, photoinduction are worked in coordination with in printing, steel plate printing, ink-jet, 3D printing, laser transfer, laser or chemical attack
The methods such as plating.The array pattern of positive pole localized contact metal electrode 7-1 and negative pole localized contact metal electrode 7-2 is one-dimensional, two-dimentional
Geometric figure or one-dimensional and two-dimentional geometric figure combination；One-dimensional geometric figure is selected from: line segment, phantom line segments or camber line；Two-dimensional geometry
Figure is selected from: circle, ellipse, spindle, annular, polygon, polygon or sector.The live width of described one-dimensional pattern is
30～200um, a length of 0.05～3mm, in the bar-shaped zone of the same doping of cell backside, adjacent two linear spacing are
0.25～2.5mm；The size of described X-Y scheme is 30～200um, in the bar-shaped zone of the same doping of cell backside adjacent two
The spacing of individual X-Y scheme is 0.25～2.5mm.
(6) dry at 200～300 DEG C.
(7) at 300～900 DEG C, carry out heat treatment, make localized contact metal electrode 7 penetrate backside passivation film 4 and adulterate with the back side
Layer (3) forms good Ohmic contact.
(8) on the p-type localized contact metal electrode 7 with n-type doping district, conductive bonding material 6, conductive bonding material are made
6 is tin cream, conducting resinl, Sn-containing alloy or conductive film etc., and the method for making can use printing, ink-jet, thermocompression bonding, ultrasonic
Weldering, spot welding or stickup etc..
(9) thin plain conductor 5 is aligned in conductive bonding material 6 along the line direction of p-type Yu the localized metallic electrode in N-type region territory
On, thin plain conductor 5 is copper cash, silver wire, silver-coated copper wire, nickel plated copper wire, tinned wird or alloy wire, thin plain conductor 5
A diameter of 20～100um.
(10) thin plain conductor 5 is made to be combined with localized contact metal electrode 7 by conductive bonding material 6 at 100～400 DEG C
Together, forming one can be as the conductive composition body of back-contact cell positive and negative electrode.
Conductive bonding material 6 is tin cream, Sn-containing alloy, conducting resinl or conductive film, conductive bonding material 6 and localized contact gold
Belong to that the method that electrode 7 connects has silk screen printing to work in coordination with heat treatment, heat treatment is worked in coordination with in ink-jet, thermocompression bonding, ultrasonic bond, spot welding and stickup.
Below in conjunction with specific embodiment, the present invention will be further described:
Embodiment 1:
(1) by the incorgruous corrosion in the KOH solution of about 80 DEG C of n type single crystal silicon sheet, it is thus achieved that surface pyramid structure.
(2) at the interdigitated diffusion mask layer of one layer of boracic of back up of silicon chip, p-doped is carried out at about 750～850 DEG C subsequently
Thermal diffusion, the boron on mask layer is entrance silicon substrate formation p-type doped layer after diffusion, and the region of non-printing mask layer, expand through phosphorus
N-type doping layer is formed after Saning.The width of single p-type doping slab region, the back side is 500um, and sheet resistance is 70 Ω/；The back side is single
The width of n-type doping slab region is 300um, and sheet resistance is 70 Ω/.This process forms 100 Ω/ 's in the front of silicon chip simultaneously
N+ doped layer.
(3) method of wet etching is used to remove front and the phosphorosilicate glass at the back side and Pyrex.
(4) silicon oxide of 20nm is deposited respectively at the front of silicon chip and the back side, heavy on the silicon oxide film of front side of silicon wafer the most again
The silicon nitride of long-pending 50nm.
(5) method using silk screen printing makes array distribution in the p-type of silicon chip back side by specific figure on N-type region territory
Localized contact metal electrode, printed pattern employing spotted array, a diameter of 60um of a single point, the same doping of cell backside
In bar-shaped zone, the spacing of adjacent two X-Y schemes is 250um.
(6) dry at 200～300 DEG C.
(7) at 300～900 DEG C, carry out heat treatment, make the localized contact metal electrode of array distribution penetrate backside passivation film, with
The P at the back side, N-type region territory form good Ohmic contact.
(8) method of silk screen printing is used to make tin cream on localized contact metal electrode.
(9) thin tinned wird along the line direction drawing of back side p-type and the localized contact metal electrode on N-type region territory and is close to
On tin cream, a diameter of 40um of thin tinned wird.The side of the thin tinned wird in back side p-type and N-type region territory and silicon chip edge
Flushing, opposite side grows about 3mm than silicon chip edge, goes between respectively as positive and negative electrode.
(10) make thin tinned wird be combined with localized contact metal electrode by tin cream at 100～400 DEG C, form one
Individual can be as the conductive composition body of back-contact cell positive and negative electrode.
Embodiment 2:
(1) by the incorgruous corrosion in the KOH solution of about 80 DEG C of n type single crystal silicon sheet, it is thus achieved that surface pyramid structure.
(2) method of ion implanting is used to form finger-like alternatively distributed p-type doped layer and n-type doping layer, the back of the body at silicon chip back side
The width of single p-type doping slab region, face is 1mm, and sheet resistance is 50 Ω/；The width of single n-type doping slab region, the back side is
0.5mm, sheet resistance is 50 Ω/.The N+ doped layer that the method for ion implanting prepares 80 Ω/ is used in the front of silicon chip.
(3) silicon chip after ion implanting is made annealing treatment.
(4) silicon chip is carried out Chemical cleaning.
(5) at the silicon oxide of the front of silicon chip deposition 90nm, the silicon oxide of 30nm is deposited overleaf.
(6) method using steel plate printing makes array distribution in the p-type of silicon chip back side by specific figure on N-type region territory
Localized contact metal electrode, the figure of printing uses line segment shape array.In the bar-shaped zone of cell backside same p-type doping, battle array
The width of alignment section is 40um, a length of 800um, the spacing of adjacent two line segments are 1mm；The same N-type of cell backside
In the bar-shaped zone of doping, the width of array line segment is 40um, a length of 400um, the spacing of adjacent two line segments are 1mm.
(7) dry at 200～300 DEG C.
(8) at 300～900 DEG C, carry out heat treatment, make the localized contact metal electrode of array distribution penetrate backside passivation film, with
The P at the back side, N-type region territory form good Ohmic contact.
(9) method of silk screen printing is used to make tin cream on localized contact metal electrode.
(10) thin silver-coated copper wire along the line direction drawing of back side p-type and the localized contact metal electrode on N-type region territory and is close to
On tin cream, a diameter of 50um of thin silver-coated copper wire.The side of the thin silver-coated copper wire in back side p-type and N-type region territory and silicon chip limit
Edge flushes, and opposite side grows about 3mm than silicon chip edge, goes between respectively as positive and negative electrode.
(11) make thin silver-coated copper wire be combined with localized contact metal electrode by tin cream at 100～400 DEG C, form one
Individual can be as the conductive composition body of back-contact cell positive and negative electrode.
Embodiment 3:
(1) by the incorgruous corrosion in the KOH solution of about 80 DEG C of n type single crystal silicon sheet, it is thus achieved that surface pyramid structure.
(2) at the interdigitated diffusion mask layer of one layer of boracic of back up of silicon chip, heat expansion is carried out at about 750～950 DEG C subsequently
Dissipating, the boron on mask layer is entrance silicon substrate formation p-type doped layer after diffusion, and the region of non-printing mask layer, after phosphorus spreads
Forming n-type doping layer, P, N doped layer is arranged alternately in the back side of silicon chip.The width of the single P in back side doping bar-shaped zone is 2mm,
Sheet resistance is 60 Ω/；The width of the single N in back side doping bar-shaped zone is 1mm, and sheet resistance is 60 Ω/.This process is simultaneously at silicon
The front of sheet forms the N+ doped layer of 90 Ω/.
(3) method of wet etching is used to remove front and the phosphorosilicate glass at the back side and Pyrex.
(4) at the silicon nitride of the front of silicon chip deposition 80nm, aluminium oxide and the 50nm of 5nm are successively deposited at the back side of silicon chip
Silicon nitride.
(5) method using silk screen printing makes array distribution in the p-type of silicon chip back side by specific figure on N-type region territory
Localized contact metal electrode, printed pattern uses line segment shape array.In the bar-shaped zone of cell backside same p-type doping, array
The width of line segment is 50um, a length of 1.8mm, the spacing of adjacent two line segments are 1.5mm；The same N-type of cell backside
In the bar-shaped zone of doping, the width of array line segment is 50um, a length of 800um, the spacing of adjacent two line segments are 1mm.
(6) dry at 200～300 DEG C.
(7) at 300～900 DEG C, carry out heat treatment, make the localized contact metal electrode of array distribution penetrate backside passivation film, with
The P at the back side, n-type doping region form good Ohmic contact.
(8) use silk screen printing respectively P, N-type region territory localized contact metal electrode on make tin cream.
(9) by the line direction drawing of thin tinned wird localized contact silver electrode along back side p-type and N-type region territory and be close to stannum
On cream, a diameter of 60um of thin tinned wird.Back side p-type is neat with silicon chip edge with the side of the thin tinned wird in N-type region territory
Flat, opposite side grows about 3mm than silicon chip edge, goes between respectively as positive and negative electrode.
(10) making thin tinned wird be combined with localized metallic electrode by tin cream at 100～400 DEG C, forming one can
Conductive composition body as back-contact cell positive and negative electrode.
Embodiment 4:
(1) just n type single crystal silicon sheet incorgruous corrosion in the KOH solution of about 80 DEG C, it is thus achieved that surface pyramid structure.
(2) method of ion implanting is used to form finger-like alternatively distributed p-type doped layer and n-type doping layer, the back of the body at silicon chip back side
The width of face single p-type doping bar-shaped zone is 1.5mm, and sheet resistance is 40 Ω/；The width of the single N in back side doping bar-shaped zone
For 0.5mm, sheet resistance is 40 Ω/.This process uses the N+ that the method for ion implanting prepares 80 Ω/ simultaneously in the front of silicon chip
Doped layer.
(3) silicon chip after ion implanting is made annealing treatment.
(4) silicon chip is carried out Chemical cleaning.
(5) at the silicon oxide of the front of silicon chip deposition 80nm, at the silicon oxide of silicon chip back side deposition 50nm.
(6) method using silk screen printing makes array distribution in the p-type of silicon chip back side by specific figure on N-type region territory
Localized contact metal electrode, printed pattern uses line segment shape array.In the bar-shaped zone of cell backside same p-type doping, array
The width of line segment is 30um, a length of 1.3mm, the spacing of adjacent two line segments are 1mm；The same N-type of cell backside is mixed
In miscellaneous bar-shaped zone, the width of array line segment is 30um, a length of 300um, the spacing of adjacent two line segments are 300um.
(7) dry at 200～300 DEG C.
(8) at 300～900 DEG C, carry out heat treatment, make the localized contact metal electrode of array distribution penetrate backside passivation film, with
The P at the back side, N-type region territory form good Ohmic contact.
(9) use laser transfer method respectively P, N-type region territory localized contact metal electrode on make tin cream.
(10) thin nickel plated copper wire along the line direction drawing of back side p-type and the localized contact metal electrode on N-type region territory and is close to
On tin cream, a diameter of 30um of thin nickel plated copper wire.The side of the thin nickel plated copper wire in back side p-type and N-type region territory and silicon chip limit
Edge flushes, and opposite side grows about 3mm than silicon chip edge, goes between respectively as positive and negative electrode.
(11) make thin nickel plated copper wire be combined with localized contact metal electrode by tin cream at 100～400 DEG C, form one
Individual can be as the conductive composition body of back-contact cell positive and negative electrode.
The foregoing is only one embodiment of the present invention, be not all of or unique embodiment, those of ordinary skill in the art
Any equivalent transformation taked technical solution of the present invention by reading description of the invention, is the claims in the present invention and is contained.
Claims (10)
1. an all back-contact electrodes contact crystal silicon solar batteries structure, it is characterised in that include the most successively: front anti-reflection
Penetrate film/passivating film (1), front N+ doped layer (2), N-type silicon substrate (9), back side doped layer (3), backside passivation film (4)
And battery electrode；Wherein, described back side doped layer (3) is spaced by p-type doped layer (3-1) and n-type doping layer (3-2)
Alternately arranged form；
Described battery electrode includes localized contact metal electrode (7), thin plain conductor (5) and contact conductor (8)；Described office
Portion's contacting metal electrode (7) includes positive pole localized contact metal electrode (7-1) and negative pole localized contact metal electrode (7-2)；Institute
State thin plain conductor (5) and include the most superfine plain conductor (5-1) and the thin plain conductor of negative pole (5-2)；Described contact conductor (8)
Including positive electrode lead (8-1) and negative electrode lead (8-2)；Positive pole localized contact metal electrode (7-1) penetrates backside passivation film
(4) Ohmic contact is formed with p-type doped layer (3-1)；Negative pole localized contact metal electrode (7-2) penetrates backside passivation film (4)
Ohmic contact is formed with n-type doping layer (3-2)；Cathode metal wire (5-1) passes through conductive bonding material (6) by positive pole office
Portion contacting metal electrode (7-1) is connected as the thin gate line electrode of Hanging sectionally of anode, and is led by positive electrode lead (8-1)
Go out electric current；Negative pole localized contact metal electrode (7-2) is connected by negative metal wire (5-2) by conductive bonding material (6)
For the thin gate line electrode of Hanging sectionally of battery cathode, and by negative electrode lead (8-2) derived current.
A kind of all back-contact electrodes contact crystal silicon solar batteries structure the most according to claim 1, it is characterised in that described
Thin plain conductor (5) is copper cash, silver wire, silver-coated copper wire, nickel plated copper wire, tinned wird or alloy wire, thin plain conductor (5)
A diameter of 20～100um.
A kind of all back-contact electrodes contact crystal silicon solar batteries structure the most according to claim 1, it is characterised in that described
Conductive bonding material (6) is tin cream, Sn-containing alloy, conducting resinl or conductive film.
A kind of all back-contact electrodes contact crystal silicon solar batteries structure the most according to claim 1, it is characterised in that described
Positive pole localized contact metal electrode (7-1) is arranged on p-type doped layer (3-1) with array pattern；Described negative pole local connects
Touch metal electrode (7-2) to be arranged on n-type doping layer (3-2) with array pattern.
A kind of all back-contact electrodes contact crystal silicon solar batteries structure the most according to claim 4, it is characterised in that array of figure
Case is one-dimensional, two-dimentional geometric figure or one-dimensional and two-dimentional geometric figure combination；One-dimensional geometric figure is selected from: line segment, phantom line segments,
Camber line or grid line shape；Two-dimentional geometric figure is selected from: circle, ellipse, spindle, annular, polygon, polygon or sector；
The live width of described one-dimensional pattern is 30～200um, a length of 0.05～3mm, the slab region of the same doping of cell backside
In territory, adjacent two linear spacing are 0.25～2.5mm；The size of described X-Y scheme is 30～200um, and cell backside is same
In the bar-shaped zone of individual doping, the spacing of adjacent two X-Y schemes is 0.25～2.5mm.
A kind of all back-contact electrodes contact crystal silicon solar batteries structure the most according to claim 1, it is characterised in that described
P-type doped layer (3-1) is 0.2～3mm with the width of n-type doping layer (3-2), and sheet resistance is 20～120 Ω/；Described
The sheet resistance in front N+ doped layer (2) is 40～120 Ω/.
A kind of all back-contact electrodes contact crystal silicon solar batteries structure the most according to claim 1, it is characterised in that battery
Surface uses and falls into light texture, and it is pyramid, inverted pyramid, Nano/micron loose structure that described front falls into light texture；Described N
The thickness of type monocrystalline silicon piece is 100～200um.
A kind of all back-contact electrodes contact crystal silicon solar batteries structure the most according to claim 1, it is characterised in that front is blunt
Change film is aluminum oxide film, silicon oxide film, silicon nitride film, silicon oxynitride film, amorphous silicon membrane, thin film of titanium oxide, carbon
One or more laminations in SiClx thin film are constituted, and the integral thickness of passivating film is 1～50nm；Front surface antireflection film is that silicon nitride is thin
One or more laminations in film, silicon oxide film, silicon oxynitride film, thin film of titanium oxide, carborundum films are constituted, antireflective
Film integral thickness is 50～100nm；The passivating film at the back side is silicon oxide film, silicon nitride film, amorphous silicon membrane, silicon oxynitride
One or more laminations in thin film, aluminum oxide film are constituted, and passivating film integral thickness is 20～150nm.
A kind of all back-contact electrodes contact crystal silicon solar batteries structure the most according to claim 1, it is characterised in that described
It is golden that positive electrode lead (8-1) and negative electrode lead (8-2) connect all the most superfine plain conductors (5-1), all negative poles respectively
Belong to wire (5-2), and positive electrode lead (8-1) and negative electrode lead (8-2) are separately positioned on the two ends of battery.
10. the preparation method of an all back-contact electrodes contact crystal silicon solar batteries structure, it is characterised in that comprise the following steps:
(1) n type single crystal silicon sheet is carried out surface-texturing process；
(2) silicon chip is doped process, forms homogeneous N+ doped layer (2) in the front of silicon chip；The back side of silicon chip formed P,
The back side doped layer (3) that N doping interval is arranged alternately；
(3) silicon chip after doping treatment is carried out Chemical cleaning；
(4) front at silicon chip is sequentially depositing passivating film and front surface antireflection film (1)；
(5) in the backside deposition backside passivation film (4) of silicon chip；
(6) passivating film (4) at silicon chip back side above makes localized contact respectively by P, the N-type region territory of back side doped layer (3)
Metal electrode (7)；
(7) drying and processing is carried out；
(8) carry out heat treatment, make localized contact metal electrode (7) penetrate backside passivation film (4) and back side doped layer (3) shape
The Ohmic contact become；
(9) on localized contact metal electrode (7), conductive bonding material (6) is made；
(10) by thin plain conductor (5) along p-type doped layer and the row side of localized contact metal electrode (7) on n-type doping layer
To drawing and be close on conductive bonding material (6)；
(11) carry out heat treatment, make thin plain conductor (5) by conductive bonding material (6) and localized contact metal electrode (7)
Combine, form the positive and negative electrode that battery is arranged alternately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610479254.5A CN105914249B (en) | 2016-06-27 | 2016-06-27 | All back-contact electrodes contact crystal silicon solar batteries structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610479254.5A CN105914249B (en) | 2016-06-27 | 2016-06-27 | All back-contact electrodes contact crystal silicon solar batteries structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105914249A true CN105914249A (en) | 2016-08-31 |
| CN105914249B CN105914249B (en) | 2018-07-17 |
Family
ID=56759714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610479254.5A Active CN105914249B (en) | 2016-06-27 | 2016-06-27 | All back-contact electrodes contact crystal silicon solar batteries structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105914249B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106981523A (en) * | 2017-04-05 | 2017-07-25 | 南昌大学 | A kind of double-deck TiO applied to rear-face contact solar cellxStructure |
| CN106981537A (en) * | 2017-04-05 | 2017-07-25 | 南昌大学 | A kind of Si/TiO applied to crystal-silicon solar cellxStructure |
| CN106981544A (en) * | 2017-04-10 | 2017-07-25 | 泰州中来光电科技有限公司 | The preparation method and battery and its component, system of full back contact solar cell |
| CN109560146A (en) * | 2017-09-22 | 2019-04-02 | 比亚迪股份有限公司 | Battery |
| WO2022253281A1 (en) * | 2021-06-03 | 2022-12-08 | 隆基绿能科技股份有限公司 | Metal electrode of solar cell and preparation method therefor |
| US11631779B2 (en) | 2016-11-07 | 2023-04-18 | Shin-Etsu Chemical Co., Ltd. | Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100096819A (en) * | 2009-02-25 | 2010-09-02 | 엘지전자 주식회사 | Back contact solar cell, and manufacturing method thereof |
| WO2011060764A2 (en) * | 2009-11-19 | 2011-05-26 | Systaic Cells Gmbh | Emitter formation by means of a laser |
| WO2012081813A1 (en) * | 2010-12-17 | 2012-06-21 | 현대중공업 주식회사 | Back contact solar cell and method for fabricating same |
| CN103794679A (en) * | 2014-01-26 | 2014-05-14 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing back contact solar cell |
| CN104576778A (en) * | 2015-01-05 | 2015-04-29 | 苏州中来光伏新材股份有限公司 | Main-grid-free efficient back-contact solar battery and assembly and manufacturing technology thereof |
| CN204651328U (en) * | 2015-04-24 | 2015-09-16 | 苏州中来光伏新材股份有限公司 | Novel without main grid high efficiency back contact solar cell and assembly thereof |
-
2016
- 2016-06-27 CN CN201610479254.5A patent/CN105914249B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100096819A (en) * | 2009-02-25 | 2010-09-02 | 엘지전자 주식회사 | Back contact solar cell, and manufacturing method thereof |
| WO2011060764A2 (en) * | 2009-11-19 | 2011-05-26 | Systaic Cells Gmbh | Emitter formation by means of a laser |
| WO2012081813A1 (en) * | 2010-12-17 | 2012-06-21 | 현대중공업 주식회사 | Back contact solar cell and method for fabricating same |
| CN103794679A (en) * | 2014-01-26 | 2014-05-14 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing back contact solar cell |
| CN104576778A (en) * | 2015-01-05 | 2015-04-29 | 苏州中来光伏新材股份有限公司 | Main-grid-free efficient back-contact solar battery and assembly and manufacturing technology thereof |
| CN204651328U (en) * | 2015-04-24 | 2015-09-16 | 苏州中来光伏新材股份有限公司 | Novel without main grid high efficiency back contact solar cell and assembly thereof |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11631779B2 (en) | 2016-11-07 | 2023-04-18 | Shin-Etsu Chemical Co., Ltd. | Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency |
| CN106981523A (en) * | 2017-04-05 | 2017-07-25 | 南昌大学 | A kind of double-deck TiO applied to rear-face contact solar cellxStructure |
| CN106981537A (en) * | 2017-04-05 | 2017-07-25 | 南昌大学 | A kind of Si/TiO applied to crystal-silicon solar cellxStructure |
| CN106981537B (en) * | 2017-04-05 | 2019-05-24 | 南昌大学 | A kind of Si/TiO applied to crystal-silicon solar cellxStructure |
| CN106981544A (en) * | 2017-04-10 | 2017-07-25 | 泰州中来光电科技有限公司 | The preparation method and battery and its component, system of full back contact solar cell |
| CN109560146A (en) * | 2017-09-22 | 2019-04-02 | 比亚迪股份有限公司 | Battery |
| CN109560146B (en) * | 2017-09-22 | 2021-02-23 | 比亚迪股份有限公司 | Battery with a battery cell |
| WO2022253281A1 (en) * | 2021-06-03 | 2022-12-08 | 隆基绿能科技股份有限公司 | Metal electrode of solar cell and preparation method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105914249B (en) | 2018-07-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106409956B (en) | A kind of N-type crystalline silicon double-sided solar battery structure and preparation method thereof | |
| CN105914249B (en) | All back-contact electrodes contact crystal silicon solar batteries structure and preparation method thereof | |
| CN106997910B (en) | P-type crystal silicon back contacts double-side cell structure and production method without front gate line | |
| CN106876491B (en) | The P-type crystal silicon back contact battery structure and production method of a kind of no front gate line | |
| CN105826428B (en) | One kind passivation contact N-type crystalline silicon battery and preparation method and component, system | |
| CN105870215A (en) | Rear surface passivation contact battery electrode structure and preparation method thereof | |
| CN105762205B (en) | A kind of P-type crystal silicon solar cell with transparency electrode and preparation method thereof | |
| CN108666376B (en) | P-type back contact solar cell and preparation method thereof | |
| AU2008359970A1 (en) | Crystalline silicon PV cell with selective emitter produced with low temperature precision etch back and passivation process | |
| TW201236171A (en) | Solar cell and solar-cell module | |
| CN106098807A (en) | A kind of N-type crystalline silicon solar battery structure and preparation method thereof | |
| CN108470781A (en) | The production method of the two-sided PERC crystal silicon solar energy batteries of the black silicon of selective emitter | |
| CN105789343B (en) | A kind of N-type double-sided solar battery with transparency electrode and preparation method thereof | |
| CN102956723B (en) | A kind of solar cell and preparation method thereof | |
| CN106129133A (en) | A kind of all back-contact electrodes contact crystal silicon solar batteries structure and preparation method thereof | |
| CN115498057B (en) | Combined passivation back contact solar cell and preparation method thereof based on laser diffusion | |
| CN111063759A (en) | Preparation process of solar cell | |
| CN105702757B (en) | A kind of crystal silicon solar energy battery electrically conducting transparent assembly and preparation method thereof | |
| CN205564766U (en) | P type crystalline silicon solar cells with two dimension electrode structure | |
| CN105870212B (en) | A kind of crystal silicon solar energy battery two-dimensional electrode and preparation method thereof | |
| CN206672943U (en) | A kind of P-type crystal silicon back contacts double-side cell structure of no front gate line | |
| CN205564764U (en) | Back passivation contact battery structure | |
| CN107046070A (en) | A kind of P-type crystal silicon battery structure and preparation method thereof | |
| CN206864485U (en) | A kind of P-type crystal silicon battery structure | |
| CN109755330A (en) | Pre-expansion discrete piece and its preparation method and application for being passivated contact structures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 225314 Jiangsu Province, Taizhou City Hailing Xingtai Road No. 268 Applicant after: Taizhou long base music Photovoltaic Technology Co., Ltd. Address before: 225314 Jiangsu Province, Taizhou City Hailing District South Road Taizhou Xingtai Leye Photovoltaic Technology Co. Ltd. Applicant before: TAIZHOU LEYE PHOTOVOLTAIC TECHNOLOGY CO., LTD. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |