CN108666377A - A kind of p-type back contacts solar cell and preparation method thereof - Google Patents
A kind of p-type back contacts solar cell and preparation method thereof Download PDFInfo
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- CN108666377A CN108666377A CN201810759465.3A CN201810759465A CN108666377A CN 108666377 A CN108666377 A CN 108666377A CN 201810759465 A CN201810759465 A CN 201810759465A CN 108666377 A CN108666377 A CN 108666377A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 238000002161 passivation Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 40
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 39
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 239000004411 aluminium Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 229910000632 Alusil Inorganic materials 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000011267 electrode slurry Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000011065 in-situ storage Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000004615 ingredient Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 239000013081 microcrystal Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 description 14
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- 230000005611 electricity Effects 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000011218 segmentation Effects 0.000 description 4
- 210000001367 artery Anatomy 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 210000003462 vein Anatomy 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The present invention relates to a kind of p-type back contacts solar cell and preparation method thereof, it is upper and under include successively：Front passivation and antireflective coating, p-type silicon substrate, n-type heterojunction area, backside passivation film and battery electrode；N-type heterojunction area is followed successively by passivating back tunnel layer, N-shaped doping film layer from top to bottom；Electrode includes anode and cathode, and anode includes just superfine grid line and positive connection electrode, and the cathode includes the thin grid line of cathode and cathode connection electrode；Just superfine grid line is locally contacted with the formation of p-type silicon substrate；The thin grid line of cathode is locally contacted with N-shaped doping film layer formation；The just superfine grid line is connect with positive connection electrode, and by positive connection electrode derived current, the thin grid line of cathode is connect with cathode connection electrode, and passes through cathode connection electrode derived current.The significantly less generation of leakage current of the present invention improves reliability and battery performance performance.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of p-type back contacts solar cell and its preparation side
Method.
Background technology
Currently, gradually exhausting with fossil energy, for solar cell as new energy substitution scheme, use is more and more wider
It is general.Solar cell is the device that the luminous energy of the sun is converted to electric energy.Solar cell generates carrier using photogenic voltage principle,
Then carrier is drawn using electrode, to be conducive to efficiently use electric energy.
Back contact battery, i.e. back contact batteries, wherein finger-like intersect back contacts solar cell and are also known as IBC electricity
Pond.IBC full name are Interdigitated back contact, and finger-like intersects back contacts.The feature of IBC battery maximums is hair
Emitter-base bandgap grading and metal contact are all in the back side of battery, the influence that the no metal electrode in front blocks, therefore have higher short circuit
Electric current Jsc, while the back side can allow wider metal grid lines to reduce series resistance Rs to improve fill factor FF；And
The unobstructed battery in this front not only high conversion efficiency, but also seem more attractive, meanwhile, the component of all back-contact electrodes is easier to
Assembly.IBC batteries are current one of the technique directions for realizing high-efficiency crystal silicon cell.
Finger-like used at present intersects back contacts solar cell usually using N-shaped piece as base material, and overleaf
Usually using silver paste, therefore when preparing IBC batteries, need to carry out mixing for higher concentration to the region of emitter and back surface field
It is miscellaneous, it could preferably to form electrode contact during subsequent technology for preparing electrode, cost is higher.And due to needing
The doping process process of different doping types at least twice is carried out, technological process is longer, is especially mixed in progress p-type in silicon chip
When miscellaneous, higher temperature and time is needed, the minority carrier life time of silicon base is caused to bring larger negative effect, and extra band
Carry out edge pn-junction to be difficult to remove, increases the complexity of technique, extend technological process, it is more unfavorable to industrialized production.
Invention content
In view of the above problems, the present invention provides a kind of p-type back contacts solar cell and preparation method thereof, it can be preferable
It solves the above problems.
To achieve the above object, technical solution of the invention is：
A kind of p-type back contacts solar cell includes successively from top to bottom：Front passivation and antireflective coating, p-type silicon substrate,
Passivating back tunnel layer, N-shaped doping film layer, backside passivation film and battery electrode；The N-shaped doping layer is arranged at intervals on the back of the body
Face is passivated tunnel layer lower surface；
The battery electrode includes anode and cathode, and the anode includes just superfine grid line and positive connection electrode, institute
It includes the thin grid line of cathode and cathode connection electrode to state cathode；Just superfine grid line in backside passivation film by opening diaphragm area and p-type
Silicon base forms contact；The thin grid line of cathode is contacted with N-shaped doping film layer formation；The just superfine grid line connects with positive connection electrode
It connects, and by positive connection electrode derived current, the thin grid line of cathode is connect with cathode connection electrode, and is connected by cathode
Electrode derived current.
Back side N-shaped doping film layer is made of one or more in polysilicon, non-crystalline silicon, microcrystal silicon, and doped with V
Race's element.
The passivating back tunnel layer is in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide and non-crystalline silicon
It is a kind of.
The width of the N-shaped doped region is 0.08~3mm, and the spacing between two neighboring N-shaped doped region is 0.05
~1mm.
The front passivation and antireflective coating are using silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide, non-crystalline silicon
In one or more compositions；The backside passivation film is using silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide, non-
One or more compositions in crystal silicon.
It is provided with what one layer of group-III element adulterated in the partial contact zones of the just superfine grid line and p-type silicon substrate
The thickness of hole doping layer, hole doping layer is 1~15um.
Further include one layer of alusil alloy layer between the hole doping layer and just superfine grid line, alusil alloy layer thickness is
1~5um.
The just superfine grid line is the electrode containing aluminium, and the width of the just superfine grid line is 20um~200um.
The thin grid line of cathode is the electrode of argentiferous, and the width of the thin grid line of cathode is 10um~100um.
The anode connection electrode main conductive ingredient includes one or more in silver, copper, aluminium, nickel；The cathode connects
Receiving electrode main conductive ingredient includes one or more in silver, copper, aluminium, nickel.
The thin grid line of cathode is disconnected in positive connection electrode punishment section, avoids being connected with positive connection electrode；It is just superfine
Grid line is disconnected in cathode connection electrode punishment section, avoids being connected with cathode connection electrode；Anode and cathode isolation, it is non-cross.
The anode connection electrode and the thin grid line of cathode are arranged in a crossed manner, and infall is provided with insulator and is mutually isolated, described
Cathode connection electrode and just superfine grid line are arranged in a crossed manner, and infall is arranged one layer of insulator and is mutually isolated；Anode and cathode are mutual
Insulation.
A kind of preparation method of p-type back contacts solar cell, includes the following steps,
1) p-type silicon substrate is cleaned and is gone to damage, p-type silicon substrate carries out surface-texturing processing；
2) passivation tunnel layer is formed in p-type silicon backside of substrate, and forms spaced N-shaped doping film layer；
3) positive passivation and the preparation of antireflective coating are carried out in p-type silicon substrate front surface, the back side is carried out in p-type silicon backside of substrate
The preparation of passivating film；
4) electrode preparation is carried out：Just superfine grid line and p-type silicon substrate form contact, and the thin grid line of cathode and N-shaped adulterate film layer
Form contact；
Further, the thin grid line of cathode adulterates the contact of film layer with N-shaped and is formed for electrode slurry burn-through backside passivation film, or
Person is electrode slurry to open diaphragm area formation and is in direct contact pre-.
Further, the preparation method of the N-shaped doping film layer of the silicon substrate bottom back side, can be used doping chemical gaseous phase in situ
Deposition method；The preparation method of the N-shaped doping film layer, also can be used first chemical vapor deposition intrinsic layer, and rear collaboration is external to mix
The hot propulsion method in miscellaneous source, ion injection method, gas take source thermal diffusion method.
Further, the positive passivation and antireflective coating preparation method, including：Chemical vapour deposition technique, atomic layer
Sedimentation, thermally grown method, physical vaporous deposition.
Further, the passivating back membrane preparation method, including：Chemical vapour deposition technique, atomic layer deposition method, heat are raw
Regular way, physical vaporous deposition.
Further, in the electrode preparation process, just superfine grid line and silicon base form contact, the thin grid line of cathode and the back of the body
Face N-shaped doped layer forms contact；Contact of the electrode with doped layer can be that electrode slurry burn-through backside passivation film is formed,
Can be electrode slurry opens diaphragm area formation and is in direct contact pre-.
Further, further include the preparation process of insulator between anode and cathode in the electrode preparation process.
The beneficial effects of the invention are as follows：
Finger-like used at present intersects back contacts solar cell usually using N-shaped piece as base material, and overleaf
Usually using silver paste, therefore when preparing IBC batteries, need to carry out mixing for higher concentration to the region of emitter and back surface field
It is miscellaneous, it could preferably to form electrode contact during subsequent technology for preparing electrode, cost is higher.And due to needing
The doping process process of different doping types at least twice is carried out, technological process is longer, is especially mixed in progress p-type in silicon chip
When miscellaneous, higher temperature and time is needed, increases the period of technique.Present invention uses p-type pieces as cell substrate, and
The process that doped p type back surface field is eliminated in technological process avoids p to greatly reduce the complexity of technological process
The high temperature complex process that the doping of type back surface field needs.In addition, the back side uses alum gate line as anode in battery flow
The thin grid line of electrode greatly reduces cost compared to silver paste as anode electrode, can also be in the p of not extra implant
Preferably contact is formed in type substrate.In addition, the emitter of cell backside and the region of back surface field, in the horizontal and vertical of space
It is all not in contact on direction, has completely cut off emitter and back surface field completely, the significantly less generation of leakage current improves reliability
It is showed with battery performance.
The preparation method of the present invention, has used p-type piece as cell substrate, and doping p is eliminated in technological process
The process of type back surface field avoids the high temperature that the doping of p-type back surface field needs to greatly reduce the complexity of technological process
Complex process.
Description of the drawings
Fig. 1 is the battery structure schematic diagram of a specific embodiment in embodiment.
Fig. 2 is the battery structure schematic diagram of a specific embodiment in embodiment.
Fig. 3 is the battery structure schematic diagram of a specific embodiment in embodiment.
Fig. 4 is the electrode schematic diagram of embodiment 1 and 3.
Fig. 5 is the electrode schematic diagram of embodiment 2.
Wherein 1 be p-type silicon substrate, 2 for front passivation and antireflective coating, 3 for passivation tunnel layer, 4 for N-shaped adulterate film layer, 5
Diaphragm area is opened for part for backside passivation film, 6,7 be just superfine grid line, and 8 be the thin grid of cathode, and 9 be positive connection electrode, and 10 be negative
Pole connection electrode, 11 be insulator, and 12 be hole doping layer, and 13 be alusil alloy layer.
Specific implementation mode
As illustrated in fig. 1 and 2, a kind of p-type back contacts solar cell of the present invention includes successively from top to bottom：Front passivation and
Antireflective coating 2, p-type silicon substrate 1, passivating back tunnel layer 3, N-shaped doping film layer 4, backside passivation film 5 and battery electrode；It is described
N-shaped doping film layer 4 be arranged at intervals on 3 lower surface of passivating back tunnel layer；Backside passivation film 5 adulterates spaced N-shaped
Film layer 4 separates.
The battery electrode includes anode and cathode, and the anode includes just superfine grid line 7 and positive connection electrode 9,
The cathode includes the thin grid line 8 of cathode and cathode connection electrode 10；Just superfine grid line 7 is contacted with the formation of p-type silicon substrate 1；Cathode
Thin grid line 8 is contacted with the N-shaped doping formation of film layer 4；The just superfine grid line 7 connect with positive connection electrode 9, and passes through anode company
9 derived current of receiving electrode, the thin grid line of the cathode 8 is connect with cathode connection electrode 10, and is passed through cathode connection electrode 10 and exported
Electric current.
As shown in 3 figures, one layer of group-III element is provided in the partial contact zones of just superfine grid line 7 and p-type silicon substrate 1
The thickness of the hole doping layer 12 of doping, hole doping layer 12 is 1~15um.Preferably, hole doping layer 12 and just superfine grid
Further include one layer of alusil alloy layer 13 between line, 13 thickness of alusil alloy layer is 1~5um.
It disconnects, avoids and 9 phase of positive connection electrode as shown in figure 4, the thin grid line 8 of cathode punishes section in positive connection electrode 9
Even；Just superfine grid line 7 is punished section in cathode connection electrode 10 and is disconnected, and avoids being connected with cathode connection electrode 10；Anode and cathode
Isolation, it is non-cross.
As shown in figure 5, positive connection electrode 9 and the thin grid line 8 of cathode are arranged in a crossed manner, it is mutual that infall is provided with insulator 10
Isolation, the cathode connection electrode 10 and just superfine grid line 7 are arranged in a crossed manner, and infall is arranged one layer of insulator 10 and is mutually isolated；
Anode and cathode mutually insulated.
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
Embodiment 1：
It illustrates below a kind of preparation method using above structure and the back contacts solar cell of method, is as shown in Figure 1
Structure.The preparation method of this back contacts solar cell is specific as follows：
Damage is carried out to silicon base to handle, surface-texturing processing and cleaning process.Using p-type monocrystalline silicon as battery base
Bottom carries out damage using 60 DEG C of solution containing KOH and handles, and carries out table using the solution containing KOH under the conditions of 80 DEG C
Plane textureization processing forms pyramid matte, pyramid scale 2-5um, and uses the mixed solution for also having hydrofluoric acid and hydrochloric acid
It is cleaned, deionized water cleaning and drying.
The preparation of passivating back tunnel layer 3 and back side N-shaped doping film layer 4.Use low-pressure chemical vapor deposition (LPCVD) one
The secondary deposition for carrying out tunnel oxide silicon, polysilicon (poly silicon) deposition that N-shaped adulterates in situ.Wherein tunnel oxide silicon layer
Thickness 2nm, N-shaped doped polycrystalline silicon thickness 100nm, 2E20 atom/cubic centimetre of N-shaped doping concentration.The back side carries out p-type area
Fluting.
Graphical n-type heterojunction area.The p-type area that needs to carry out of cell backside is handled using laser, local is gone
Except poly layers of tunnel oxide, N-shaped thereon, passivating oxide layer and intrinsically polysilicon layer, and cross-notching region is cleaned.P
Type region is distributed in straight parallel threadiness, and slot line width 300um, slotted line center spacing 1500um.After treatment, remaining n
Type emitter region is also linearly distributed, width 1200um.It is carried out using tetramethyl ammonium hydroxide solution cross-notching region
After cleaning treatment, hydrochloric acid solution cleaning, deionized water cleaning, drying etc. are carried out.
Front passivation and the preparation of antireflective coating 2, backside passivation film 5.Be passivated in cell backside, deposition of aluminium oxide and
Silicon nitride layer.The deposition of aluminium oxide and silicon nitride passive film, oxidation are completed using plasma enhancement chemical vapor deposition PECVD
Aluminium thickness 15nm, silicon nitride thickness 100nm, refractive index 2.10.Using enhanced plasma chemical vapor deposition PECVD in battery
Light-receiving surface deposits the alumina layer of 5-10nm, and redeposited silicon nitride, thickness 80nm, refractive index 2.03 complete front on it
Passivation and the preparation of antireflective coating 2.
It is prepared by battery electrode.The preparation in p-type contact region is carried out in cell backside p-type area, laser is used in p-type area
Film is carried out out, opening area is in spot distribution, and dot pattern is linearly distributed in p-type area, opens a diameter of of film spot figure
90nm, point spacing 500um.Using laser trepanning is carried out in cell backside p-type area.Scan mode is to carry out arteries and veins to p-type area
Formula local laser radiation treatment is rushed, scanning direction is 532nm along the parallel lines direction of doping, the wherein wavelength of trepanning laser,
Spot size is 90um diameter circulars, sweep speed 10000mm/s, frequency 20kHz, i.e., it is upper every in strip p-type area
Every 500um, there are one the reserved contact holes of a diameter of 90um border circular areas.The passivating film at the back side is in the area that the hot spot of laser irradiates
Domain forms trepanning, and non-irradiated region does not form contact hole then, after the enterprising laser opening excessively of this contact bore region, without the back side
Passivating film 5.
The electricity for including conductive compositions is formed above the regions cell backside n and back side p-type area using screen printing mode
Pole pulp layer.Electrode includes anode electrode and negative electrode, and wherein anode electrode includes just superfine grid line 7 and positive connection electrode
9, negative electrode includes the thin grid line 8 of cathode and cathode connection electrode 10；Just superfine grid line 7 is made of aluminium, and the thin grid of cathode are by silver-colored group
At the grid line of anode and cathode is mutually not attached to；Just superfine grid and anode connection electrode be connected with each other, the connection electrode of cathode and
The thin grid of cathode are connected with each other；The just superfine grid line 7 and the thin grid line of the cathode 8 are segmented arrangement；Anode connection electricity
Pole 9 is set at thin 8 segmentation of grid line of cathode, and cathode connection electrode 10 is set at just superfine 7 segmentation of grid line；Anode and cathode are mutual
Mutually insulate.Just superfine grid width is 120um, is completely covered set contact opening area, the thin 8 width 50um of grid line of cathode,
Positive connection electrode 94, cathode connection electrode 104.Form battery electrode as shown in Figure 4.
Metallization heat treatment process is completed in sintering furnace.500-800 DEG C of heat spike temperature.Preferably add in the present embodiment
It is 700 DEG C to be heat-treated peak temperature.By this step, completes battery and prepare.Just superfine grid line 7 passes through passivating film in the process
It is formed and is contacted with p-type silicon substrate 1, the thin grid line 8 of cathode passes through passivating film and N-shaped DOPOS doped polycrystalline silicon to form contact.The battery of formation
Structure is as shown in Figure 1.
Embodiment 2
The preparation method of another back contacts solar cell of citing below, is structure as shown in Figure 2.This back contacts sun electricity
The preparation method in pond is specific as follows：
Damage is carried out to silicon base to handle, surface-texturing processing and cleaning process.Using p-type monocrystalline silicon as battery base
Bottom carries out damage using 60 DEG C of solution containing KOH and handles, and carries out table using the solution containing KOH under the conditions of 80 DEG C
Plane textureization processing forms pyramid matte, pyramid scale 2-5um, and uses the mixed solution for also having hydrofluoric acid and hydrochloric acid
It is cleaned, deionized water cleaning and drying.
The preparation of back side n-type heterojunction.The heavy of tunnel oxide silicon is once carried out using low-pressure chemical vapor deposition (LPCVD)
Product, polysilicon (poly silicon) deposition that N-shaped adulterates in situ.Wherein tunnel oxide silicon layer thickness 2nm, N-shaped doped polycrystalline
Silicon thickness 100nm, 2E20 atom/cubic centimetre of N-shaped doping concentration.The back side carries out the fluting of p-type area.
It is prepared by graphical n-type heterojunction.The n of cleaning local removal thereon is carried out using mask collaboration tetramethylammonium hydroxide
Poly layers of type retains passivation tunnel layer 3.P type island region domain is distributed in straight parallel threadiness, and slot line width 300um, slotted line center spacing
1500um.After treatment, remaining N-shaped emitter region is also linearly distributed, width 1200um.Then, salt is carried out
Acid solution cleans, deionized water cleaning, drying etc..
Front passivation and the preparation of antireflective coating 2, backside passivation film 5.Be passivated in cell backside, deposition of aluminium oxide and
Silicon nitride layer.The deposition of aluminium oxide and silicon nitride passive film, oxidation are completed using plasma enhancement chemical vapor deposition PECVD
Aluminium thickness 15nm, silicon nitride thickness 100nm, refractive index 2.10.Using enhanced plasma chemical vapor deposition PECVD in battery
Light-receiving surface deposits the alumina layer of 5-10nm, and redeposited silicon nitride, thickness 80nm, refractive index 2.03 complete front on it
Passivation and the preparation of antireflective coating 2.
It is prepared by battery electrode.The preparation in p-type contact region is carried out in cell backside p-type area, laser is used in p-type area
Film is carried out out, opening area is in spot distribution, and dot pattern is linearly distributed in p-type area, opens a diameter of of film spot figure
90nm, point spacing 500um.Using laser trepanning is carried out in cell backside p-type area.Scan mode is to carry out arteries and veins to p-type area
Formula local laser radiation treatment is rushed, scanning direction is 532nm along the parallel lines direction of doping, the wherein wavelength of trepanning laser,
Spot size is 90um diameter circulars, sweep speed 10000mm/s, frequency 20kHz, i.e., it is upper every in strip p-type area
Every 500um, there are one the reserved contact holes of a diameter of 90um border circular areas.The passivating film at the back side is in the area that the hot spot of laser irradiates
Domain forms trepanning, and non-irradiated region does not form contact hole then, after the enterprising laser opening excessively of this contact bore region, without the back side
Passivating film 5.
The electricity for including conductive compositions is formed above the regions cell backside n and back side p-type area using screen printing mode
Pole pulp layer.Electrode includes anode electrode and negative electrode, and wherein anode electrode includes just superfine grid line 7 and positive connection electrode
9, negative electrode includes the thin grid line 8 of cathode and cathode connection electrode 10；Just superfine grid line 7 is made of aluminium, and the thin grid of cathode are by silver-colored group
At the grid line of anode and cathode is mutually not attached to；Just superfine grid and anode connection electrode be connected with each other, the connection electrode of cathode and
The thin grid of cathode are connected with each other；Insulator 10 is printed between the connection electrode and the thin grid of cathode of anode to be completely cut off, cathode
Connection electrode and the thin grid of anode between be printed with insulator 10 and completely cut off.Just superfine grid width is 120um, in passivating film
Upper set opening area, the thin 8 width 50um of grid line of cathode, positive connection electrode 9 are 4, and cathode connection electrode 10 is 4
Root.Form battery electrode as schematically shown in Figure 5.
Metallization heat treatment process is completed in sintering furnace.500-800 DEG C of heat spike temperature.Preferably add in the present embodiment
It is 700 DEG C to be heat-treated peak temperature.By this step, completes battery and prepare.Just superfine grid line 7 passes through passivating film in the process
It is formed and is contacted with p-type silicon substrate 1, the thin grid line 8 of cathode passes through passivating film and N-shaped DOPOS doped polycrystalline silicon to form contact.The battery of formation
Structure is as shown in Figure 2.
Embodiment 3：
It illustrates below a kind of preparation method using above structure and the back contacts solar cell of method, is as shown in Figure 3
Structure.The preparation method of this back contacts solar cell is specific as follows：
Damage is carried out to silicon base to handle, surface-texturing processing and cleaning process.Using p-type monocrystalline silicon as battery base
Bottom carries out damage using 60 DEG C of solution containing KOH and handles, and carries out table using the solution containing KOH under the conditions of 80 DEG C
Plane textureization processing forms pyramid matte, pyramid scale 2-5um, and uses the mixed solution for also having hydrofluoric acid and hydrochloric acid
It is cleaned, deionized water cleaning and drying.
The preparation of passivating back tunnel layer 3 and back side N-shaped doping film layer 4.Use low-pressure chemical vapor deposition (LPCVD) one
The secondary deposition for carrying out tunnel oxide silicon, polysilicon (poly silicon) deposition that N-shaped adulterates in situ.Wherein tunnel oxide silicon layer
Thickness 2nm, N-shaped doped polycrystalline silicon thickness 100nm, 2E20 atom/cubic centimetre of N-shaped doping concentration.The back side carries out p-type area
Fluting.
Graphical n-type heterojunction area.The p-type area that needs to carry out of cell backside is handled using laser, local is gone
Except poly layers of tunnel oxide, N-shaped thereon, passivating oxide layer and intrinsically polysilicon layer, and cross-notching region is cleaned.P
Type region is distributed in straight parallel threadiness, and slot line width 300um, slotted line center spacing 1500um.After treatment, remaining n
Type emitter region is also linearly distributed, width 1200um.It is carried out using tetramethyl ammonium hydroxide solution cross-notching region
After cleaning treatment, hydrochloric acid solution cleaning, deionized water cleaning, drying etc. are carried out.
Front passivation and the preparation of antireflective coating 2, backside passivation film 5.Be passivated in cell backside, deposition of aluminium oxide and
Silicon nitride layer.The deposition of aluminium oxide and silicon nitride passive film, oxidation are completed using plasma enhancement chemical vapor deposition PECVD
Aluminium thickness 15nm, silicon nitride thickness 100nm, refractive index 2.10.Using enhanced plasma chemical vapor deposition PECVD in battery
Light-receiving surface deposits the alumina layer of 5-10nm, and redeposited silicon nitride, thickness 80nm, refractive index 2.03 complete front on it
Passivation and the preparation of antireflective coating 2.
It is prepared by battery electrode.The preparation in p-type contact region is carried out in cell backside p-type area, laser is used in p-type area
Film is carried out out, opening area is in spot distribution, and dot pattern is linearly distributed in p-type area, opens a diameter of of film spot figure
90nm, point spacing 500um.Using laser trepanning is carried out in cell backside p-type area.Scan mode is to carry out arteries and veins to p-type area
Formula local laser radiation treatment is rushed, scanning direction is 532nm along the parallel lines direction of doping, the wherein wavelength of trepanning laser,
Spot size is 90um diameter circulars, sweep speed 10000mm/s, frequency 20kHz, i.e., it is upper every in strip p-type area
Every 500um, there are one the reserved contact holes of a diameter of 90um border circular areas.The passivating film at the back side is in the area that the hot spot of laser irradiates
Domain forms trepanning, and non-irradiated region does not form contact hole then, after the enterprising laser opening excessively of this contact bore region, without the back side
Passivating film 5.
The electricity for including conductive compositions is formed above the regions cell backside n and back side p-type area using screen printing mode
Pole pulp layer.Electrode includes anode electrode and negative electrode, and wherein anode electrode includes just superfine grid line 7 and positive connection electrode
9, negative electrode includes the thin grid line 8 of cathode and cathode connection electrode 10；Just superfine grid line 7 is made of aluminium, and the thin grid of cathode are by silver-colored group
At the grid line of anode and cathode is mutually not attached to；Just superfine grid and anode connection electrode be connected with each other, the connection electrode of cathode and
The thin grid of cathode are connected with each other；The just superfine grid line 7 and the thin grid line of the cathode 8 are segmented arrangement；Anode connection electricity
Pole 9 is set at thin 8 segmentation of grid line of cathode, and cathode connection electrode 10 is set at just superfine 7 segmentation of grid line；Anode and cathode are mutual
Mutually insulate.Just superfine grid width is 120um, is completely covered set contact opening area, the thin 8 width 50um of grid line of cathode,
Positive connection electrode 9 is 4, and cathode connection electrode 10 is 4.Form battery electrode as shown in Figure 4.
Metallization heat treatment process is completed in sintering furnace.500-800 DEG C of heat spike temperature.Preferably add in the present embodiment
It is 700 DEG C to be heat-treated peak temperature.By this step, completes battery and prepare.Just superfine grid line 7 passes through passivating film in the process
It is formed and is contacted with p-type silicon substrate 1, the thin grid line 8 of cathode passes through passivating film and N-shaped DOPOS doped polycrystalline silicon to form contact.It eventually forms
In solar cell, the cavitation layer 12 and alusil alloy layer 13 for mixing aluminium are formed between just superfine grid line 7 and silicon base.The electricity of formation
Pool structure is as shown in Figure 3.
In addition, the above embodiment of the present invention is example, has and think with the technology described in claims of the present invention
Want to be allowed to identical method and play the technical solution of identical function and effect, is all contained in the present invention.
Claims (16)
1. a kind of p-type back contacts solar cell, which is characterized in that include successively from top to bottom：Front passivation and antireflective coating
(2), p-type silicon substrate (1), passivating back tunnel layer (3), N-shaped doping film layer (4), backside passivation film (5) and battery electrode；Institute
The N-shaped doping film layer (4) stated is arranged at intervals on passivating back tunnel layer (3) lower surface；
The battery electrode includes anode and cathode, and the anode includes just superfine grid line (7) and positive connection electrode (9),
The cathode includes the thin grid line of cathode (8) and cathode connection electrode (10)；Just superfine grid line (7) connects with p-type silicon substrate (1) formation
It touches；The thin grid line of cathode (8) is formed with N-shaped doping film layer (4) and is contacted；The just superfine grid line (7) connects with positive connection electrode (9)
It connects, and by positive connection electrode (9) derived current, the thin grid line of cathode (8) connect with cathode connection electrode (10), and leads to
Cross cathode connection electrode (10) derived current.
2. p-type back contacts solar cell according to claim 1, which is characterized in that the back side N-shaped doping film layer (4)
It is made of one or more in polysilicon, non-crystalline silicon, microcrystal silicon, and doped with V group element.
3. p-type back contacts solar cell according to claim 1, which is characterized in that the passivating back tunnel layer (3) is
One kind in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide and non-crystalline silicon.
4. p-type back contacts solar cell according to claim 1, which is characterized in that the width of the N-shaped doped region is
0.08~3mm, the spacing between two neighboring N-shaped doped region are 0.05~1mm.
5. p-type back contacts solar cell according to claim 1, which is characterized in that the front passivation and antireflective coating
(2) one or more compositions in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide, non-crystalline silicon are used；The back side
Passivating film (5) is using one or more compositions in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide, non-crystalline silicon.
6. p-type back contacts solar cell according to claim 1, which is characterized in that the just superfine grid line (7) and p
The hole doping layer (12) of one layer of group-III element doping, hole doping layer are provided in the partial contact zones of type silicon base (1)
(12) thickness is 1~15um.
7. p-type back contacts solar cell according to claim 5, which is characterized in that the hole doping layer (12) and
Further include one layer of alusil alloy layer (13) between just superfine grid line, alusil alloy layer (13) thickness is 1~5um.
8. p-type back contacts solar cell according to claim 1, which is characterized in that the just superfine grid line (7) is containing aluminium
Electrode, the width of the just superfine grid line (7) is 20um~200um.
9. p-type back contacts solar cell according to claim 1, which is characterized in that the thin grid line of cathode (8) is argentiferous
Electrode, the width of the thin grid line of cathode (8) is 10um~100um.
10. p-type back contacts solar cell according to claim 1, which is characterized in that the anode connection electrode (9) is main
It includes one or more in silver, copper, aluminium, nickel to want conductive compositions；Cathode connection electrode (10) the main conductive ingredient includes
It is one or more in silver, copper, aluminium, nickel.
11. the p-type back contacts solar cell according to claim 1~10 any one, which is characterized in that the cathode is thin
Grid line (8) is disconnected in positive connection electrode (9) punishment section, avoids being connected with positive connection electrode (9)；Just superfine grid line (7) exists
Cathode connection electrode (10) is punished section and is disconnected, and avoids being connected with cathode connection electrode (10)；Anode and cathode isolation, are not handed over mutually
Fork.
12. the p-type back contacts solar cell according to claim 1~10 any one, which is characterized in that the anode is even
Receiving electrode (9) and the thin grid line of cathode (8) are arranged in a crossed manner, and infall is provided with insulator (10) and is mutually isolated, the cathode connection
Electrode (10) and just superfine grid line (7) are arranged in a crossed manner, and infall is arranged one layer of insulator (10) and is mutually isolated；Anode and cathode phase
Mutually insulation.
13. a kind of preparation method of p-type back contacts solar cell, which is characterized in that include the following steps：
1) p-type silicon substrate (1) is cleaned and is gone to damage, p-type silicon substrate (1) carries out surface-texturing processing；
2) passivation tunnel layer (3) is formed at p-type silicon substrate (1) back side, and forms spaced N-shaped doping film layer (4)；
3) positive passivation and the preparation of antireflective coating (2) are carried out in p-type silicon substrate (1) front, p-type silicon substrate (1) back side into
The preparation of row backside passivation film (5)；
4) electrode preparation is carried out：Just superfine grid line (7) and p-type silicon substrate (1) form contact, the thin grid line of cathode (8) and N-shaped doping
Film layer (4) forms contact.
14. the preparation method of p-type back contacts solar cell according to claim 13, which is characterized in that the thin grid line of cathode
(8) it is burnt for electrode slurry with the contact of N-shaped doping film layer (4) with the contact of N-shaped doping film layer (4) and the thin grid line of cathode (8)
Backside passivation film (5) is formed or electrode slurry is opened diaphragm area formation and be in direct contact pre-.
15. the preparation method of p-type back contacts solar cell according to claim 13, which is characterized in that the N-shaped doping
The preparation method of film layer (4) adulterates chemical vapor deposition method using in situ, or uses first chemical vapor deposition intrinsic layer,
The hot propulsion method of external doped source, ion injection method, gas is cooperateed with to take source thermal diffusion method afterwards.
16. the preparation method of p-type back contacts solar cell according to claim 13, which is characterized in that in step 4), also
Include the preparation process of insulator between anode and cathode.
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