CN108649078A - A kind of p-type back contacts solar cell and preparation method thereof - Google Patents
A kind of p-type back contacts solar cell and preparation method thereof Download PDFInfo
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- CN108649078A CN108649078A CN201810760070.5A CN201810760070A CN108649078A CN 108649078 A CN108649078 A CN 108649078A CN 201810760070 A CN201810760070 A CN 201810760070A CN 108649078 A CN108649078 A CN 108649078A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000002161 passivation Methods 0.000 claims abstract description 34
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- 239000012212 insulator Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000011267 electrode slurry Substances 0.000 claims description 9
- 229910000632 Alusil Inorganic materials 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 36
- 238000010586 diagram Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000004807 localization Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229940037003 alum Drugs 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The present invention relates to a kind of p-type back contacts solar cells and preparation method thereof, include successively from top to bottom：Front passivation and antireflective coating, p-type silicon substrate, back side N-shaped local, backside passivation film and battery electrode；Battery electrode includes anode and cathode, and the anode includes just superfine grid line and positive connection electrode, and cathode includes the thin grid line of cathode and cathode connection electrode；Just superfine grid line is locally contacted with the formation of p-type silicon substrate；The thin grid line of cathode is locally contacted with the formation of N-shaped doped region；Just superfine grid line is connect with positive connection electrode, and by positive connection electrode derived current, and the thin grid line of cathode is connect with cathode connection electrode, and passes through cathode connection electrode derived current.Present invention uses p-type pieces as cell substrate, and the process of doped p type back surface field is eliminated in technological process, to greatly reduce the complexity of technological process, avoids the high temperature complex process that the doping of p-type back surface field needs.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of p-type back contacts solar cell and its preparation side
Method.
Background technology
Currently, gradually exhausting with fossil energy, for solar cell as new energy substitution scheme, use is more and more wider
It is general.Solar cell is the device that the luminous energy of the sun is converted to electric energy.Solar cell generates carrier using photogenic voltage principle,
Then carrier is drawn using electrode, to be conducive to efficiently use electric energy.
Back contact battery, i.e. back contact batteries, wherein finger-like intersect back contacts solar cell and are also known as IBC electricity
Pond.IBC full name are Interdigitated back contact, and finger-like intersects back contacts.The feature of IBC battery maximums is hair
Emitter-base bandgap grading and metal contact are all in the back side of battery, the influence that the no metal electrode in front blocks, therefore have higher short circuit
Electric current Jsc, while the back side can allow wider metal grid lines to reduce series resistance Rs to improve fill factor FF；And
The unobstructed battery in this front not only high conversion efficiency, but also seem more attractive, meanwhile, the component of all back-contact electrodes is easier to
Assembly.IBC batteries are current one of the technique directions for realizing high-efficiency crystal silicon cell.
Back contacts solar cell used at present is usually used as base material, and overleaf usually using N-shaped piece
Silver paste, therefore when preparing IBC batteries, need the doping that higher concentration is carried out to the region of emitter and back surface field, ability
So that preferably forming electrode contact during subsequent technology for preparing electrode, cost is higher.And due to needing to carry out extremely
The doping process process of few different doping types twice, technological process is longer, especially in silicon chip when carrying out p-type doping,
It needs higher temperature and time, extra band to carry out edge pn-junction and be difficult to remove, increases the complexity of technique, extend technique stream
Journey.
Invention content
In view of the above problems, this patent provides a kind of p-type back contacts solar cell and preparation method, can preferably solve
The certainly above problem.Present invention uses p-type pieces as cell substrate, and doped p type back surface field is eliminated in technological process
Process, to greatly reduce the complexity of technological process, avoid p-type back surface field doping need high temperature complex process
Process.
In order to achieve the above objectives, technical solution of the invention is：
A kind of p-type back contacts solar cell includes successively from top to bottom：Front passivation and antireflective coating, p-type silicon substrate,
Spaced N-shaped doped region, backside passivation film and battery electrode；The N-shaped doped region is arranged at p-type silicon base
Bottom surface forms p-type area between adjacent n form doped region；
The battery electrode includes anode and cathode, and anode includes just superfine grid line and positive connection electrode, cathode packet
Include the thin grid line of cathode and cathode connection electrode；Just superfine grid line is contacted with p-type area；The thin grid line of cathode connects with N-shaped doped region
It touches；The just superfine grid line is connect with positive connection electrode, and passes through positive connection electrode derived current, the thin grid line of cathode
It is connect with cathode connection electrode, and passes through cathode connection electrode derived current.
The width of the N-shaped doped region is 0.08~3mm, and the spacing between two neighboring N-shaped doped region is 0.05
~1mm.
The front passivation and antireflective coating use silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide and amorphous
One or more compositions in silicon；The backside passivation film, using silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide,
One or more compositions in non-crystalline silicon.
Include the hole of one layer of group-III element doping in p-type area between the just superfine grid line and p-type silicon substrate
The thickness of doped layer, hole doping layer is 1~15um.
Further include one layer of alusil alloy layer between the hole doping layer and just superfine grid line, alusil alloy layer thickness is
1~5um
The just superfine grid line is containing aluminium electrode, and the width of just superfine grid line is 20um~200um.
The thin grid line of cathode is containing silver electrode, and the width of the thin grid line of cathode is 10um~100um.
The anode connection electrode and cathode connection electrode include one or more in silver, copper, aluminium and nickel.
The thin grid line of cathode avoids being connected with positive connection electrode in the punishment section disconnection of positive connection electrode, just superfine grid
Line avoids being connected with cathode connection electrode in the punishment section disconnection of cathode connection electrode；Anode and cathode are isolated and intersect row in finger-like
Row.
The anode connection electrode and the thin grid line of cathode are arranged in a crossed manner, and infall is provided with insulator and is mutually isolated, described
Cathode connection electrode and just superfine grid line are arranged in a crossed manner, and infall is provided with insulator and is mutually isolated.
A kind of preparation method of p-type back contacts solar cell, includes the following steps,
Surface-texturing processing is carried out to p-type silicon substrate；
N-shaped doping is locally carried out in p-type silicon backside of substrate；
Positive passivation is carried out in p-type silicon substrate front surface and is prepared by antireflective coating, and passivating back is carried out in p-type silicon backside of substrate
Film preparation；
Carry out electrode preparation.
Further, in the electrode preparation process, just superfine grid line and p-type silicon substrate form contact, the thin grid line of cathode
It is formed and is contacted with back side N-shaped doped region；Contact of the electrode with doped layer is burnt backside passivation film for electrode slurry and is formed, or
Electrode slurry is overleaf opened diaphragm area formation on passivating film and is in direct contact.
Further, the passivating back membrane preparation method, including：Chemical vapour deposition technique, atomic layer deposition method, heat are raw
Regular way, physical vaporous deposition.
Further, in the electrode preparation process, just superfine grid line and p-type silicon substrate form contact, the thin grid line of cathode
It is formed and is contacted with back side N-shaped doped region；Contact of the electrode with doped layer can be that electrode slurry burn-through backside passivation film is formed,
Can also be electrode slurry opens diaphragm area formation and is in direct contact pre-.
Further, further include the preparation process of insulator between anode and cathode in the electrode preparation process.
Compared with prior art, the beneficial effects of the invention are as follows：
Back contacts solar cell used at present is usually used as base material, and overleaf usually using N-shaped piece
Silver paste, therefore when preparing IBC batteries, need the doping that higher concentration is carried out to the region of emitter and back surface field, ability
So that preferably forming electrode contact during subsequent technology for preparing electrode, cost is higher.And due to needing to carry out extremely
The doping process process of few different doping types twice, technological process is longer, especially in silicon chip when carrying out p-type doping,
Higher temperature and time is needed, the period of technique is increased.Present invention uses p-type pieces as cell substrate, and in technique
The process that doped p type back surface field is eliminated in flow avoids the p-type back of the body to greatly reduce the complexity of technological process
The high temperature complex process that face doping needs.In addition, the back side uses alum gate line as anode electrode in battery flow
Thin grid line greatly reduces cost compared to silver paste as anode electrode, can also be in the p-type base of not extra implant
Good Ohmic contact is formed on bottom.
Description of the drawings
Fig. 1 is the battery structure schematic diagram of the specific embodiment in embodiment.
Fig. 2 is the electrode schematic diagram of a specific embodiment in embodiment.
Fig. 3 is the electrode schematic diagram of another specific embodiment in embodiment
Fig. 4 is the battery structure schematic diagram of another specific embodiment in embodiment.
Wherein, 1 is p-type silicon substrate, and 2 be front passivation and antireflective coating, and 3 be N-shaped doped region, and 4 be p-type area, and 5 are
Backside passivation film, 6 is open diaphragm area, and 7 be just superfine grid line, and 8 be the thin grid line of cathode, and 9 connect for positive connection electrode, 10 for cathode
Receiving electrode, 11 be insulator, and 12 be hole doping layer, and 13 be alusil alloy layer.
Specific implementation mode
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
As shown in Figure 1, a kind of p-type back contacts solar cell of the present invention, includes successively from top to bottom：Front passivation and anti-reflection
Penetrate film 2, p-type silicon substrate 1, spaced N-shaped doped region 3, backside passivation film 5 and battery electrode；The N-shaped doped region
Domain 3 is arranged at 1 surface of p-type silicon substrate, and p-type area 4 is formed between adjacent n form doped region 3；
As shown in Fig. 2, battery electrode includes anode and cathode, anode includes just superfine grid line 7 and positive connection electrode 9,
Cathode includes the thin grid line 8 of cathode and cathode connection electrode 10；Just superfine grid line 7 is contacted with p-type area 4；The thin grid line 8 of cathode and n
Type doped region 3 contacts；The just superfine grid line 7 is connect with positive connection electrode 9, and exports electricity by positive connection electrode 9
Stream, the thin grid line of the cathode 8 is connect with cathode connection electrode 10, and passes through 10 derived current of cathode connection electrode.
As shown in Figure 4, it is preferable that include one layer of III group in the p-type area 4 between just superfine grid line 7 and p-type silicon substrate 1
The thickness of the hole doping layer 12 of element doping, hole doping layer 12 is 1~15um.Hole doping layer 12 and just superfine grid line 7
Between further include one layer of alusil alloy layer 13,13 thickness of alusil alloy layer is 1~5um
As shown in Figure 2, it is preferable that the thin grid line 8 of cathode punishes section disconnection in positive connection electrode 9 and avoids connecting electricity with anode
Pole 9 is connected, and just superfine grid line 7 punishes section disconnection in cathode connection electrode 10 and avoids being connected with cathode connection electrode 10；Anode and
Cathode is isolated and is in finger-like cross arrangement.
As shown in Figure 3, it is preferable that positive connection electrode 9 and the thin grid line 8 of cathode intersect, and infall is provided with insulator 11
It is mutually isolated, the cathode connection electrode 10 and just superfine grid line 7 intersect, and infall is provided with insulator 11 and is mutually isolated.
Embodiment 1：
It illustrates below a kind of preparation method using above structure and the back contacts solar cell of method, is as shown in Figure 1
Structure.The preparation method of this back contacts solar cell is specific as follows：
1) it carries out damage to p-type silicon substrate 1 to handle, surface-texturing processing and cleaning process.Using p-type monocrystalline silicon as
Cell substrate carries out damage using 60 DEG C of solution containing KOH and handles, and the solution containing KOH is used under the conditions of 80 DEG C
Surface-texturing processing is carried out, forms pyramid matte, pyramid scale 2-5um, and use the mixed of also hydrofluoric acid and hydrochloric acid
It closes solution to be cleaned, deionized water cleaning and drying.
2) overleaf it is respectively formed local emitter.Back side localization N-shaped is overleaf completed using the mode of ion implanting
Doping, ion implanting use mask plate, and are disposably prepared into the N-shaped doped region of parallel lines distribution, and are picked in boiler tube
Into and annealing process, 840 DEG C of temperature 20 minutes form local emitter.Emitter stripes number is 100, width 1mm.Doping
Region square resistance can be measured as 60-70ohm using the mode that whole face is injected.And it again passes by the solution containing HF acid and carries out
The removal of phosphorosilicate glass and extra silicon oxide layer.
3) front passivation and the preparation of antireflective coating 2 and backside passivation film 5.Use enhanced plasma chemical vapor deposition
(PECVD) alumina layer of 5-10nm is deposited in battery front side, on it redeposited silicon nitride, thickness 80nm, refractive index
2.03, complete front passivation and the preparation of antireflective coating 2.
The alumina layer for depositing 5-10nm in cell backside using enhanced plasma chemical vapor deposition (PECVD),
Redeposited silicon nitride, thickness 100nm, refractive index 2.10 complete passivating back thereon.
4) prepared by electrode.Using laser trepanning is carried out in cell p type region.Scan mode is to carry out pulse to p-type area
Formula local laser radiation treatment, scanning direction are 532nm, light along the parallel lines direction of doping, the wherein wavelength of trepanning laser
Spot size is 80um diameter circulars, sweep speed 10000mm/s, frequency 10kHz, the hot spot of the passivating film at the back side in laser
The region of irradiation forms trepanning, and non-irradiated region does not form contact hole then, with this condition, in the p-type area of cell backside
The spacing in domain, the irradiation of two adjacent laser is 1mm, i.e., upper in strip p-type area every 1mm, there are one a diameter of 80um circles
The reserved contact hole in shape region, after this contacts the enterprising laser opening excessively of bore region, without backside passivation film 5.
The electrode slurry for including conductive compositions is formed above the regions cell backside n and p-type area using screen printing mode
The bed of material.Electrode includes anode electrode and negative electrode, and wherein anode electrode includes just superfine grid line 7 and positive connection electrode 9, is born
Pole electrode includes the thin grid line 8 of cathode and cathode connection electrode 10；Just superfine grid line 7 is made of aluminium, and the thin grid of cathode are made of silver-colored, just
The grid line of pole and cathode is mutually not attached to；The connection electrode of just superfine grid and anode is connected with each other, the connection electrode and cathode of cathode
Thin grid be connected with each other；The just superfine grid line 7 and the thin grid line of the cathode 8 are segmented arrangement；Positive connection electrode 9 is set
It is placed at thin 8 segmentation of grid line of cathode, cathode connection electrode 10 is set at just superfine 7 segmentation of grid line；Anode and cathode are exhausted mutually
Edge.Just superfine grid 100, width 120um, are completely covered above-mentioned laser opening region, the thin grid of cathode 100, width 50um,
Positive connection electrode 93, cathode connection electrode 103.Wherein electrode structure is as shown in Fig. 2 schematic diagrames.
Heat-agglomerating processing is completed in sintering furnace.600-800 DEG C of heat spike temperature.In the present embodiment preferably at heating
It is 700 DEG C to manage peak temperature.By this step, completes battery and prepare.Just superfine grid line 7 passes through 1 shape of passivating film and p-type silicon substrate
At contact, the thin grid line 8 of cathode passes through passivating film and N-shaped doped region to contact.
Embodiment 2：
It illustrates below a kind of preparation method using above structure and the back contacts solar cell of method, for knot as shown in the figure
Structure.The preparation method of this back contacts solar cell is specific as follows：
1) it carries out damage to p-type silicon substrate 1 to handle, surface-texturing processing and cleaning process.Using p-type monocrystalline silicon as
Cell substrate carries out damage using 60 DEG C of solution containing KOH and handles, and the solution containing KOH is used under the conditions of 80 DEG C
Surface-texturing processing is carried out, forms pyramid matte, pyramid scale 2-5um, and use the mixed of also hydrofluoric acid and hydrochloric acid
It closes solution to be cleaned, deionized water cleaning and drying.
2) overleaf it is respectively formed local emitter.Back side localization N-shaped is overleaf completed using the mode of ion implanting
Doping, ion implanting use mask plate, and are disposably prepared into the N-shaped doped region of parallel lines distribution, and are picked in boiler tube
Into and annealing process, 840 DEG C of temperature 20 minutes form local emitter.Emitter stripes number is 100, width 1mm.Doping
Region square resistance can be measured as 60-70ohm using the mode that whole face is injected.And it again passes by the solution containing HF acid and carries out
The removal of phosphorosilicate glass and extra silicon oxide layer.
3) front passivation and the preparation of antireflective coating 2 and the preparation of backside passivation film 5.Use enhanced plasma
The alumina layer that vapor deposition (PECVD) deposits 5-10nm in battery front side is learned, redeposited silicon nitride, thickness are on it
80nm, refractive index 2.03 complete front passivation and the preparation of antireflective coating 2.
4) alumina layer of 5-10nm is deposited in cell backside using enhanced plasma chemical vapor deposition (PECVD),
Redeposited silicon nitride, thickness 100nm, refractive index 2.10 complete passivating back on it.
5) prepared by electrode.Using laser trepanning is carried out in cell p type region.Scan mode is to carry out pulse to p-type area
Formula local laser radiation treatment, scanning direction are 532nm, light along the parallel lines direction of doping, the wherein wavelength of trepanning laser
Spot size is 80um diameter circulars, sweep speed 10000mm/s, frequency 10kHz, the hot spot of the passivating film at the back side in laser
The region of irradiation forms trepanning, and non-irradiated region does not form contact hole then, with this condition, in the p-type area of cell backside
The spacing in domain, the irradiation of two adjacent laser is 1mm, i.e., upper in strip p-type area every 1mm, there are one a diameter of 80um circles
The reserved contact hole in shape region, after this contacts the enterprising laser opening excessively of bore region, without backside passivation film 5.
The electrode slurry for including conductive compositions is formed above the regions cell backside n and p-type area using screen printing mode
The bed of material.Electrode includes anode electrode and negative electrode, and wherein anode electrode includes just superfine grid line 7 and positive connection electrode 9, is born
Pole electrode includes the thin grid line 8 of cathode and cathode connection electrode 10；Just superfine grid line 7 is made of aluminium, and the thin grid of cathode are made of silver-colored, just
The grid line of pole and cathode is mutually not attached to；The connection electrode of just superfine grid and anode is connected with each other, the connection electrode and cathode of cathode
Thin grid be connected with each other；Insulator 11 is printed between the connection electrode and the thin grid of cathode of anode to be completely cut off, the company of cathode
Insulator is printed between receiving electrode and the thin grid of anode to be completely cut off.Just superfine grid 100, width 120um are completely covered
On state opening area in backside passivation film 5, the thin grid of cathode 100, width 50um, positive connection electrode 93, cathode connection
103, electrode.Wherein electrode structure is as shown in Fig. 3 schematic diagrames.
Heat-agglomerating processing is completed in sintering furnace.600-800 DEG C of heat spike temperature.In the present embodiment preferably at heating
It is 700 DEG C to manage peak temperature.By this step, completes battery and prepare.Just superfine grid line 7 passes through 1 shape of passivating film and p-type silicon substrate
At contact, the thin grid line 8 of cathode passes through passivating film and N-shaped doped region to contact.
Embodiment 3：
It illustrates below a kind of preparation method using above structure and the back contacts solar cell of method, for knot as shown in the figure
Structure.The preparation method of this back contacts solar cell is specific as follows：
1) it carries out damage to p-type silicon substrate 1 to handle, surface-texturing processing and cleaning process.Using p-type monocrystalline silicon as
Cell substrate carries out damage using 60 DEG C of solution containing KOH and handles, and the solution containing KOH is used under the conditions of 80 DEG C
Surface-texturing processing is carried out, forms pyramid matte, pyramid scale 2-5um, and use the mixed of also hydrofluoric acid and hydrochloric acid
It closes solution to be cleaned, deionized water cleaning and drying.
2) overleaf it is respectively formed local emitter.Back side localization N-shaped is overleaf completed using the mode of ion implanting
Doping, ion implanting use mask plate, and are disposably prepared into the N-shaped doped region of parallel lines distribution, and are picked in boiler tube
Into and annealing process, 840 DEG C of temperature 20 minutes form local emitter.Emitter stripes number is 100, width 1mm.Doping
Region square resistance can be measured as 60-70ohm using the mode that whole face is injected.And it again passes by the solution containing HF acid and carries out
The removal of phosphorosilicate glass and extra silicon oxide layer.
3) front passivation and the preparation of antireflective coating 2 and the preparation of backside passivation film 5.Use enhanced plasma
The alumina layer that vapor deposition (PECVD) deposits 5-10nm in battery front side is learned, redeposited silicon nitride, thickness are on it
80nm, refractive index 2.03 complete front passivation and the preparation of antireflective coating 2.
4) alumina layer of 5-10nm is deposited in cell backside using enhanced plasma chemical vapor deposition (PECVD),
Redeposited silicon nitride, thickness 100nm, refractive index 2.10 complete passivating back on it.
5) prepared by electrode.Using laser trepanning is carried out in cell p type region.Scan mode is to carry out pulse to p-type area
Formula local laser radiation treatment, scanning direction are 532nm, light along the parallel lines direction of doping, the wherein wavelength of trepanning laser
Spot size is 80um diameter circulars, sweep speed 10000mm/s, frequency 10kHz, the hot spot of the passivating film at the back side in laser
The region of irradiation forms trepanning, and non-irradiated region does not form contact hole then, with this condition, in the p-type area of cell backside
The spacing in domain, the irradiation of two adjacent laser is 1mm, i.e., upper in strip p-type area every 1mm, there are one a diameter of 80um circles
The reserved contact hole in shape region, after this contacts the enterprising laser opening excessively of bore region, without backside passivation film 5.
The electrode slurry for including conductive compositions is formed above the regions cell backside n and p-type area using screen printing mode
The bed of material.Electrode includes anode electrode and negative electrode, and wherein anode electrode includes just superfine grid line 7 and positive connection electrode 9, is born
Pole electrode includes the thin grid line 8 of cathode and cathode connection electrode 10；Just superfine grid line 7 is made of aluminium, and the thin grid of cathode are made of silver-colored, just
The grid line of pole and cathode is mutually not attached to；The connection electrode of just superfine grid and anode is connected with each other, the connection electrode and cathode of cathode
Thin grid be connected with each other；Insulator 11 is printed between the connection electrode and the thin grid of cathode of anode to be completely cut off, the company of cathode
Insulator is printed between receiving electrode and the thin grid of anode to be completely cut off.Just superfine grid 100, width 120um are completely covered
On state opening area in backside passivation film 5, the thin grid of cathode 100, width 50um, positive connection electrode 93, cathode connection
103, electrode.Wherein electrode structure is as shown in Fig. 3 schematic diagrames.
Heat-agglomerating processing is completed in sintering furnace.600-800 DEG C of heat spike temperature.In the present embodiment preferably at heating
It is 700 DEG C to manage peak temperature.By this step, completes battery and prepare.Just superfine grid line 7 passes through 1 shape of passivating film and p-type silicon substrate
At contact, the thin grid line 8 of cathode passes through passivating film and N-shaped doped region to contact.In the solar cell eventually formed, just superfine grid line
The hole doping layer 12 and alusil alloy layer 13 for mixing aluminium are formed between 7 and p-type silicon substrate 1.Battery structure is as shown in Figure 4.
In addition, the above embodiment of the present invention is example, has and think with the technology described in claims of the present invention
Want to be allowed to identical method and play the technical solution of identical function and effect, is all contained in the present invention.
Claims (13)
1. a kind of p-type back contacts solar cell, which is characterized in that include successively from top to bottom：Front passivation and antireflective coating
(2), p-type silicon substrate (1), N-shaped doped region (3), backside passivation film (5) and battery electrode；The N-shaped doped region (3)
It is arranged at p-type silicon substrate (1) surface；
The battery electrode includes anode and cathode, and anode includes just superfine grid line (7) and positive connection electrode (9), cathode
Including the thin grid line of cathode (8) and cathode connection electrode (10)；Just superfine grid line (7) connects with p-type area (4) in p-type silicon substrate (1)
It touches；The thin grid line of cathode (8) is contacted with N-shaped doped region (3)；The just superfine grid line (7) connect with positive connection electrode (9),
And by positive connection electrode (9) derived current, the thin grid line of cathode (8) connect with cathode connection electrode (10), and passes through
Cathode connection electrode (10) derived current.
2. p-type back contacts solar cell according to claim 1, which is characterized in that the width of the N-shaped doped region (3)
Degree is 0.08~3mm, and the spacing between two neighboring N-shaped doped region is 0.05~1mm.
3. p-type back contacts solar cell pond according to claim 1, which is characterized in that the front passivation and antireflective
Film (2) uses one or more compositions in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide and non-crystalline silicon；It is described
Backside passivation film (5), using one or more groups in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide, non-crystalline silicon
At.
4. p-type back contacts solar cell pond according to claim 1, which is characterized in that the just superfine grid line (7) and
Include the hole doping layer (12) of one layer of group-III element doping, hole doping in p-type area (4) between p-type silicon substrate (1)
The thickness of layer (12) is 1~15um.
5. p-type back contacts solar cell according to claim 4, which is characterized in that the hole doping layer (12) and
One layer of alusil alloy layer (13) is additionally provided between just superfine grid line (7), alusil alloy layer (13) thickness is 1~5um.
6. p-type back contacts solar cell according to claim 1, which is characterized in that the just superfine grid line (7) is containing aluminium
The width of electrode, just superfine grid line (7) is 20um~200um.
7. p-type back contacts solar cell according to claim 1, which is characterized in that the thin grid line of cathode (8) is argentiferous
The width of electrode, the thin grid line of cathode (8) is 10um~100um.
8. p-type back contacts solar cell according to claim 1, which is characterized in that it is described anode connection electrode (9) include
It is one or more in silver, copper, aluminium and nickel；The cathode connection electrode (10) includes one kind or more in silver, copper, aluminium and nickel
Kind.
9. the p-type back contacts solar cell according to claim 1~8 any one, which is characterized in that the thin grid of cathode
Line (8) is disconnected in positive connection electrode (9) punishment section, avoids being connected with positive connection electrode (9)；Just superfine grid line (7) is negative
Pole connection electrode (10) punishment section disconnection avoids being connected with cathode connection electrode (10)；Anode and cathode isolation, it is non-cross.
10. the p-type back contacts solar cell according to claim 1~8 any one, which is characterized in that the anode is even
Receiving electrode (9) and the thin grid line of cathode (8) are arranged in a crossed manner, and infall is provided with insulator (11) and is mutually isolated, the cathode connection
Electrode (10) and just superfine grid line (7) are arranged in a crossed manner, and infall is provided with insulator (11) and is mutually isolated；Anode and cathode are mutual
Insulation.
11. a kind of preparation method of p-type back contacts solar cell, which is characterized in that include the following steps,
1) surface-texturing processing is carried out to p-type silicon substrate (1)；
2) N-shaped doping is locally carried out at p-type silicon substrate (1) back side；
3) it carries out positive passivation in p-type silicon substrate (1) front and is prepared by antireflective coating (2), carried out at p-type silicon substrate (1) back side
It is prepared by backside passivation film (5)；
4) electrode preparation is carried out：The p-type area (4) of just superfine grid line (7) and p-type silicon substrate (1) forms contact, the thin grid line of cathode
(8) and back side N-shaped doped region (3) forms contact.
12. the preparation method of p-type back contacts solar cell according to claim 11, which is characterized in that the thin grid line of cathode
(8) it is burnt for electrode slurry with the contact of p-type area (4) with the contact of back side N-shaped doped region (3) and just superfine grid line (7)
Backside passivation film (5) is formed or electrode slurry overleaf opens diaphragm area on passivating film (5) formation is in direct contact in advance.
13. the preparation method of p-type back contacts solar cell according to claim 11, which is characterized in that in step 4), also
Include the preparation process of insulator between anode and cathode.
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| WO2022247057A1 (en) * | 2021-05-28 | 2022-12-01 | 浙江爱旭太阳能科技有限公司 | Back-contact solar cell string and preparation method therefor, and assembly and system |
| CN117253929A (en) * | 2023-11-16 | 2023-12-19 | 隆基绿能科技股份有限公司 | Back contact battery and manufacturing method thereof |
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