CN117253929B - Back contact battery and manufacturing method thereof - Google Patents
Back contact battery and manufacturing method thereof Download PDFInfo
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- CN117253929B CN117253929B CN202311526648.8A CN202311526648A CN117253929B CN 117253929 B CN117253929 B CN 117253929B CN 202311526648 A CN202311526648 A CN 202311526648A CN 117253929 B CN117253929 B CN 117253929B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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Abstract
The invention discloses a back contact battery and a manufacturing method thereof, and relates to the technical field of photovoltaics, so as to prevent electric leakage and improve the electrical stability of the back contact battery. The back contact battery includes a battery substrate, and first and second electrodes formed on a backlight surface of the battery substrate. The backlight surface of the battery substrate has first and second regions alternately distributed. The first region and the second region are opposite in conductivity type. The projection of the first electrode on the backlight surface is positioned in the first area. The projection of the second electrode on the backlight surface is positioned in the second area. The first electrode and the second electrode each include a plurality of collector electrodes and a plurality of bus electrodes. In the second direction, the distance between the end of each current collecting electrode section in the first electrode and the adjacent bus electrode included in the second electrode is a first distance. And along the second direction, the distance between the end part of each current collecting electrode section in the second electrode and the adjacent bus electrode included in the first electrode is a second distance. The first distance is greater than the second distance.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and in particular, to a method for manufacturing a semiconductor device.
Background
The back contact cell refers to a solar cell in which the positive electrode and the negative electrode are both on the back light surface of the cell, and the light surface of the back contact cell is not shielded by a metal electrode. Compared with a solar cell with a light-facing surface shielded, the back contact cell has higher short-circuit current and photoelectric conversion efficiency, and is one of the technical directions for realizing the high-efficiency crystalline silicon cell at present.
However, after the first electrode and the second electrode with opposite conductive types are formed on the backlight surface side of the battery substrate included in the conventional back contact battery, the end portion of the current collecting electrode section included in the first electrode along the second direction is overlapped to the second area, so that electricity leakage is easily caused, and the electrical stability of the back contact battery is not improved.
Disclosure of Invention
The invention aims to provide a back contact battery and a manufacturing method thereof, which are used for preventing electric leakage caused by overlapping of the end part of a current collecting electrode section in a first electrode along a second direction with a second area after a first electrode and a second electrode with opposite conductivity types are formed on a back surface of a battery substrate, so that the electric stability of the back contact battery is improved.
In order to achieve the above object, the present invention provides a back contact battery including: the battery includes a battery substrate, and first and second electrodes formed on a backlight surface of the battery substrate. The backlight surface of the battery substrate is provided with first areas and second areas which are alternately distributed. The first region and the second region are opposite in conductivity type. The projection of the first electrode on the backlight surface is positioned in the first area. The projection of the second electrode on the backlight surface is positioned in the second area. The first electrode and the second electrode each include a plurality of collector electrodes and a plurality of bus electrodes. The first electrode includes bus electrodes and the second electrode includes bus electrodes that extend in a first direction and are alternately spaced apart in a second direction, the first direction being different from the second direction. The first electrode comprises a collector electrode in ohmic contact with the first region, the second electrode comprises a collector electrode in ohmic contact with the second region, and the collector electrodes of the first electrode and the second electrode extend along the second direction and are alternately distributed at intervals along the first direction. Each collector electrode is connected with a collector electrode with the same polarity, and each collector electrode comprises a plurality of collector electrode sections which are distributed at intervals along the second direction, and the interval between every two adjacent collector electrode sections in the same collector electrode is used for isolating the collector electrode with the opposite polarity. And the distance between the end part of each current collecting electrode section in the first electrode and the adjacent bus electrode included in the second electrode is a first distance along the second direction. And along the second direction, the distance between the end part of each current collecting electrode section in the second electrode and the adjacent bus electrode included in the first electrode is a second distance. The first distance is greater than the second distance.
With the above technical solution, the collector electrode included in the first electrode is in ohmic contact with the first region, and is configured to collect carriers of a corresponding conductivity type in the first region and conduct the carriers to the collector electrode included in the first electrode. The second electrode includes a collector electrode in ohmic contact with the second region for collecting carriers of the corresponding conductivity type in the second region and conducting to a collector electrode included in the second electrode. Because of this, the first and second regions alternately arranged on the backlight side of the battery substrate are opposite in conductivity type, so are the first and second electrodes. In the above case, among the first electrode and the second electrode, the same collector electrode includes adjacent two collector electrode segments having a space for isolating the collector electrode having the opposite polarity to itself, suppressing leakage.
And, along the second direction, the end of each current collecting electrode section in the first electrode is spaced apart from the adjacent bus electrode comprised by the second electrode by a first distance. And along the second direction, the distance between the end part of each current collecting electrode section in the second electrode and the adjacent bus electrode included in the first electrode is a second distance. The first distance is greater than the second distance. At this time, the end of each collector electrode segment in the first electrode may be separated from the adjacent collector electrode included in the second electrode by a first distance having a larger length, so that the end of each collector electrode segment in the first electrode in the second direction may not overlap the second region opposite to the conductivity type of the second electrode and the adjacent collector electrode included in the second electrode, and the current leakage may be prevented. In other words, the back contact battery provided by the invention can respectively regulate and control the distance between the end part of each current collecting electrode section in the positive electrode and the adjacent bus electrode included in the negative electrode and the distance between the end part of each current collecting electrode section in the negative electrode and the adjacent bus electrode included in the positive electrode along the second direction according to the practical application scene, so that the back contact battery can prevent electric leakage, improve the electrical stability of the back contact battery, simultaneously enable the current collecting electrode sections to have relatively strong carrier collecting capability, and facilitate improving the photoelectric conversion efficiency of the back contact battery.
As a possible implementation, in the second direction, the end of each collector electrode segment in the first electrode is spaced a third distance from the edge of the second region. The minimum distance between the edge of each bus electrode in the first electrode and the edge of the second region is a fourth distance along the second direction. The third distance is greater than the fourth distance. Under the condition, the third distance with larger length can be ensured to prevent the end part of each current collecting electrode section in the first electrode along the second direction from being overlapped to the second area with the opposite conductivity type, so that the electric leakage is avoided, meanwhile, the distance between the edge of each current collecting electrode in the first electrode and the edge of the second area along the second direction is not required to be increased because of the processing width error and the offset error of the current collecting electrode included in the first electrode, the first area and the second area which are commonly positioned on one side of the backlight surface are ensured to have proper ranges, the carrier recombination rate on one side of the backlight surface is reduced, and the photoelectric conversion efficiency of the back contact battery is facilitated to be improved.
As a possible implementation, in the second direction, the minimum distance between the edge of the first region and the edge of the bus electrode in the second electrode is the fifth distance. And in the second direction, the distance between the edge of the first region and the end of the current collecting electrode section in the second electrode is a sixth distance. The ratio of the fifth distance to the sixth distance is 0.8 or more and 1.2 or less.
With the above technical solution, the fifth distance and the sixth distance are distances between the edge of the bus electrode and the edge of the first region of the end of the collector electrode segment in the second electrode in the second direction, respectively, opposite to the conductivity type of the collector electrode segment. Based on this, in the actual manufacturing process, the fifth distance and the sixth distance need to take into account machining errors of the bus electrode and the collector electrode segment in the second electrode, respectively, so that corresponding intervals are reserved to prevent the edges of the bus electrode and the ends of the collector electrode segment in the second electrode from overlapping to the first region with opposite conductivity types. The machining error of the bus electrode and the collector electrode section included in the second electrode is approximately the same, so when the ratio of the fifth distance to the sixth distance is more than or equal to 0.8 and less than or equal to 1.2, the ratio of the fifth distance to the sixth distance is approximately equal to each other, and on the premise of simultaneously ensuring that the edge of the bus electrode and the end of the collector electrode section in the second electrode respectively leak electricity with the first area, partial carriers in the second area cannot be timely led out due to the fact that one of the fifth distance and the sixth distance is larger can be prevented, and the back contact battery is ensured to have higher photoelectric conversion efficiency.
As a possible implementation, in the second direction, the end of each collector electrode segment in the first electrode is spaced a third distance from the edge of the second region. The third distance is 0.15mm or more and 0.3mm or less.
Under the condition of adopting the technical scheme, the third distance is in the range, so that the electric leakage prevention effect between the end part of each current collecting electrode section in the first electrode along the second direction and the edge of the second area is poor due to the fact that the third distance is smaller, and the back contact battery is ensured to have higher electric stability. In addition, carriers of the corresponding conductivity type generated near the edge of the first region are difficult to collect at the end part of each current collecting electrode section in the first electrode along the second direction due to the large third distance, so that the high carrier collecting capacity of each current collecting electrode section in the first electrode is ensured, and further the high photoelectric conversion efficiency of the back contact battery is ensured.
As a possible implementation, in the second direction, the minimum distance between the edge of each bus electrode in the first electrode and the edge of the second region is the fourth distance. The fourth distance is 0.07mm or more and less than 0.15mm.
Under the condition of adopting the technical scheme, the fourth distance is in the range, so that the problem that the part of the bus electrode included in the actually formed first electrode is positioned above the second area due to the fact that the reserved machining allowance is smaller as the fourth distance is smaller can be prevented, and the overlapping leakage problem of the bus electrode included in the first electrode can be prevented through the fourth distance. Meanwhile, the manufacturing precision of the bus electrode in the first electrode is also prevented from being strictly required to avoid electric leakage, and the manufacturing difficulty of the bus electrode in the first electrode is reduced. In addition, the range of the second area which is positioned on the side of the backlight surface together with the first area is prevented from being smaller due to the fact that the fourth distance is larger, the carrier recombination rate on the side of the backlight surface is reduced, and the photoelectric conversion efficiency of the back contact battery is improved.
As a possible implementation, in the second direction, the end of each collector electrode segment in the first electrode is spaced a third distance from the edge of the second region. The minimum distance between the edge of each bus electrode in the first electrode and the edge of the second region is a fourth distance along the second direction. The ratio of the third distance to the fourth distance is greater than 1 and less than or equal to 2. The beneficial effects of this case are similar to those of the third distance of 0.15mm or more and 0.3mm or less and the fourth distance of 0.07mm or more and 0.15mm or less, and are not described here again.
As a possible implementation, each bus electrode included in the first electrode is not in direct contact with the first region. In this case, in order to prevent leakage, it is not necessary to include a leakage factor between the edge of the bus electrode included in the first electrode and the edge of the second region when the set size of the second distance is taken into consideration. And when the setting size of the first distance is considered, the leakage factor between the end part of the current collecting electrode section of the first electrode along the second direction and the edge of the second area still needs to be included, so that the first distance is set to be larger than the second distance, and the carrier collecting capability of each current collecting electrode section in the second electrode can be improved while the overlap leakage of the end part of each current collecting electrode section in the first electrode along the second direction can be prevented.
As a possible implementation, each bus electrode included in the second electrode is not in direct contact with the second region.
Under the condition of adopting the technical scheme, under the condition that other factors are the same, compared with the condition that the bus electrode included in the second electrode is also in direct contact with the second area, when the bus electrode included in the second electrode is not in direct contact with the second area, the contact area between the second electrode and the second area is smaller. Under the condition, when the back contact battery further comprises the passivation layer arranged on one side of the backlight surface of the battery substrate, if the contact area between the second electrode and the second area is smaller, the contact area between the passivation layer and the second area is larger, so that the passivation effect of the passivation layer on one side of the backlight surface of the battery substrate can be improved, and the working performance of the back contact battery can be improved.
As one possible implementation, the battery substrate includes: a semiconductor substrate, and a doped semiconductor layer formed on a partial region of a backlight surface of the semiconductor substrate. The doped semiconductor layer is of opposite conductivity type to the semiconductor substrate. The area of the backlight surface of the semiconductor substrate exposed outside the doped semiconductor layer is a first area, and the area of one side of the doped semiconductor layer, which faces away from the semiconductor substrate, is a second area.
Under the condition of adopting the technical scheme, in the actual manufacturing process of the battery substrate, only a doped semiconductor layer covered on the backlight surface of the semiconductor substrate is required to be formed, and the part of the doped semiconductor layer covered on the first region is removed, so that a first region and a second region with opposite conductive types can be formed on one side of the backlight surface, and the problem that the manufacturing process of the back contact battery is complex due to the fact that the backlight surface is required to be doped twice with opposite conductive types can be solved.
As a possible implementation manner, the semiconductor substrate is a P-type semiconductor substrate, and the doped semiconductor layer is an N-type doped semiconductor layer. The cell base further includes a tunneling passivation layer between the P-type semiconductor substrate and the N-type doped semiconductor layer.
Under the condition of adopting the technical scheme, the tunneling passivation layer and the N-type doped semiconductor layer can form a tunneling passivation contact structure. The tunneling passivation contact structure has excellent interface passivation effect and selective collection of carriers, and can further improve the photoelectric conversion efficiency of the back contact battery.
In a second aspect, the present invention also provides a method for manufacturing a back contact battery, the method comprising: first, a battery substrate is formed. The backlight surface of the battery substrate has first and second regions alternately distributed. Next, a region pattern of the first region, design structure related parameters corresponding to the first electrode and the second electrode included in the back contact battery, first performance adjustment related parameters corresponding to the first electrode, and second performance adjustment related parameters corresponding to the second electrode are obtained. The first performance adjustment related parameter is different from the second performance adjustment related parameter. And the first electrode and the second electrode each include a plurality of collector electrodes and a plurality of bus electrodes. The first electrode includes bus electrodes and the second electrode includes bus electrodes that extend in a first direction and are alternately spaced apart in a second direction, the first direction being different from the second direction. The collector electrodes included in the first electrode and the collector electrodes included in the second electrode extend along the second direction and are alternately distributed at intervals along the first direction. Each collector electrode is connected with a collector electrode with the same polarity, and each collector electrode comprises a plurality of collector electrode sections which are distributed at intervals along the second direction, and the interval between every two adjacent collector electrode sections in the same collector electrode is used for isolating the collector electrode with the opposite polarity. And adjusting the distance between each current collecting electrode section in the first electrode and the adjacent bus electrode included by the second electrode to be a first distance based on the region pattern, the design structure related parameter and the first performance adjustment related parameter, and updating the design structure related parameter. And then, adjusting the distance between each current collecting electrode section in the second electrode and the adjacent bus electrode included in the first electrode to be a second distance based on the region pattern, the design structure related parameter and the second performance adjustment related parameter, and updating the design structure related parameter. And then, forming a first electrode and a second electrode on the backlight surface according to the updated design structure related parameters. The projection of the first electrode on the backlight surface is positioned in the first area. The projection of the second electrode on the backlight surface is positioned in the second area.
Under the circumstances of adopting the technical scheme, in the manufacturing method of the back contact battery provided by the invention, after the area pattern of the first area, the design structure association parameter corresponding to the first electrode and the second electrode, the first performance adjustment association parameter corresponding to the first electrode and the second performance adjustment association parameter corresponding to the second electrode are obtained, the distance between each current collecting electrode section in the first electrode and the adjacent current collecting electrode included in the second electrode and the distance between each current collecting electrode section in the second electrode and the adjacent current collecting electrode included in the first electrode are respectively adjusted according to different first performance adjustment association parameters and second performance adjustment association parameters, so that the end part of each current collecting electrode section in the second direction of the first electrode and the second electrode is prevented from generating electricity leakage with the current collecting electrode with opposite polarity, and the electrical stability of the back contact battery is improved, meanwhile, the electrode sections in the second electrode have relatively strong current collecting capacity, and the photoelectric conversion efficiency of the back contact battery is improved.
As a possible implementation, the first performance adjustment related parameter includes a first minimum anticreep distance and a first maximum collection distance. The first distance is greater than or equal to the first minimum anticreep interval and less than or equal to the first maximum collection interval. In this case, the distance between each collector electrode segment in the first electrode and the adjacent collector electrode included in the second electrode is set within the minimum distance for preventing leakage and the maximum distance for effectively collecting carriers of the corresponding conductivity type, so that it is possible to ensure that each collector electrode segment in the first electrode can effectively collect carriers of the corresponding conductivity type generated in each part in the first region while avoiding leakage at the end of each collector electrode segment in the first electrode, reduce the carrier recombination rate, and facilitate improvement of the photoelectric conversion efficiency of the back contact battery.
As one possible implementation, the second performance adjustment-related parameters include a second minimum anticreep spacing and a second maximum collection spacing. The second distance is greater than or equal to the second minimum anticreep interval and less than or equal to the second maximum collection interval. The first performance adjustment related parameters described above may be referred to in this case as the first performance adjustment related parameters, where the first distance is greater than or equal to the first minimum anticreep distance and less than or equal to the first maximum collection distance, and the first distance is not described herein.
As one possible implementation, forming a battery substrate includes: a doped semiconductor layer is formed over the back surface of the semiconductor substrate. And then, removing the part of the doped semiconductor layer positioned on the first region by adopting a laser etching process so as to form the battery substrate. The battery base includes a semiconductor substrate and a remaining doped semiconductor layer.
As a possible implementation, the conductivity type of the doped semiconductor layer is opposite to the conductivity type of the semiconductor substrate. In this case, only a doped semiconductor layer is required to be formed to cover the entire back surface of the semiconductor substrate, and the portion of the doped semiconductor layer covering the first region is removed, so that the first region and the second region with opposite conductivity types can be formed on one side of the back surface, and the problem that the back contact battery manufacturing process is complex due to the need of conducting double doping with opposite conductivity types on the back surface can be solved.
As a possible implementation, removing the portion of the doped semiconductor layer located on the first region using a laser etching process includes: and acquiring the laser etching related parameters, the first processing error related parameters corresponding to the bus electrode included in the second electrode, and the second processing error related parameters corresponding to the bus electrode included in the first electrode. Next, a laser spot pattern is determined based on the design structure related parameters and the laser etching related parameters. And then, adjusting the distance between the edge of the laser spot pattern and the bus electrode included by the second electrode along the second direction based on the design structure related parameter and the first processing error related parameter. And adjusting the distance between the edge of the laser spot pattern and the bus electrode in the first electrode along the second direction based on the design structure related parameter and the second processing error related parameter. And then, adopting a laser etching process, and etching the doped semiconductor layer according to the adjusted laser spot pattern.
Under the condition of adopting the technical scheme, the laser spot pattern (the laser spot pattern is consistent with the pattern of the first area formed by the subsequent laser etching process) under the theoretical condition can be determined based on the design structure related parameter and the laser etching related parameter. In the actual machining process of the first electrode and the second electrode, machining errors often exist due to factors such as machine precision or electrode slurry state, and the existence of the machining errors may cause the actual width and the actual forming position of the bus electrode included in the actually machined second electrode to change, so that the distance between the bus electrode included in the second electrode and the edge of the laser spot pattern along the second direction under the theoretical condition no longer meets the working requirement; similarly, the actual width and the actual forming position of the bus electrode included in the first electrode which is actually processed may be changed due to the existence of the processing error, so that the distance between the bus electrode included in the first electrode and the edge of the laser spot pattern along the second direction in the theoretical situation no longer meets the working requirement, and after the laser spot pattern in the theoretical situation is determined, the distance between the edge of the laser spot pattern and the bus electrode included in the second electrode along the second direction and the distance between the edge of the laser spot pattern and the bus electrode included in the first electrode along the second direction are adjusted according to the first processing error related parameter and the second processing error related parameter, so that the lap-joint short circuit of the bus electrode can be prevented, and the yield of the manufactured back contact battery is improved.
As a possible implementation manner, the laser etching related parameters include: the laser spot size, the overlapping distance of adjacent laser spots, the design distance between the edge of the laser spot pattern and the end part of each current collecting electrode section in the first electrode along the second direction, and the design distance between the edge of the laser spot pattern and the current collecting electrode included in the first electrode along the second direction. In this case, the range corresponding to the set corresponding number of laser spots can be determined by combining the laser spot size and the overlapping distance of the adjacent laser spots. And the designed spacing between the edge of the laser spot pattern and the end part of each current collecting electrode section in the first electrode along the second direction and the designed spacing between the edge of the laser spot pattern and the bus electrode included in the first electrode along the second direction define the boundary of the laser spot pattern to be determined. Based on the above, when the laser etching related parameters include the laser spot size, the overlapping distance of the adjacent laser spots, the design distance between the edge of the laser spot pattern and the end of each collector electrode segment in the first electrode along the second direction, and the design distance between the edge of the laser spot pattern and the collector electrode included in the first electrode along the second direction, the laser spot pattern can be accurately determined according to the design structure related parameters and the laser etching related parameters, so that the determination accuracy of the laser spot pattern is improved.
As a possible implementation manner, the first machining error related parameter includes a machining width error and an offset error corresponding to the bus electrode included in the second electrode. In this case, the change of the morphology and the position of the bus electrode included in the second electrode caused by the machine precision and the slurry state when the bus electrode included in the second electrode is actually manufactured can be estimated according to the first processing error related parameter, so that the distance between the edge of the laser spot pattern and the bus electrode included in the second electrode along the second direction can be effectively adjusted according to the first processing error related parameter, and the leakage is avoided.
As a possible implementation manner, the second machining error related parameter includes a machining width error and an offset error corresponding to the bus electrode included in the first electrode. The beneficial effects in this case may refer to the beneficial effect analysis of the first machining error related parameter described above including the machining width error and the offset error corresponding to the bus electrode included in the second electrode, which will not be described herein.
As a possible implementation, the design distance between the edge of the laser spot pattern and the end of each collector electrode segment in the first electrode along the second direction is greater than 0 and less than 0.4mm. In this case, the design pitch is within the above-described range, and it is possible to prevent the leakage preventing effect between the end of each collector electrode segment in the first electrode in the second direction and the edge of the second region from being poor due to the small design pitch, ensuring high electrical stability of the back contact battery. In addition, carriers of corresponding conductivity types generated near the edge of the first region can be prevented from being difficult to collect at the end part of each current collecting electrode section in the first electrode along the second direction due to the large design interval, so that the high carrier collecting capacity of each current collecting electrode section in the first electrode is ensured, and further the high photoelectric conversion efficiency of the back contact battery is ensured.
As a possible implementation manner, the design distance between the edge of the laser spot pattern and the bus electrode included in the first electrode along the second direction is equal to one half of the difference between the overlapping distance of the laser spot size and the adjacent laser spot.
Under the condition of adopting the technical scheme, because the number of the laser spots included in the laser spot pattern can only be an integer greater than or equal to 1, electric leakage easily occurs when the edge of the laser spot pattern is just overlapped with the converging electrode included in the first electrode, so that the width of one laser spot is added, corresponding machining allowance can be reserved for two sides of the converging electrode included in the first electrode along the second direction, at the moment, the design distance between the edge of the laser spot pattern and the converging electrode included in the first electrode along the second direction is equal to one half of the difference value between the overlapping distance of the laser spot size and the adjacent laser spot, and therefore, the situation that energy waste is caused by arranging more spots or the range of the second area is small can be avoided while electric leakage is prevented, and the manufactured back contact battery is ensured to have higher working performance.
As one possible implementation manner, a distance between an edge of the adjusted laser spot pattern and the bus electrode included in the second electrode along the second direction is greater than or equal to M1 and less than N1. Wherein M1 is the sum of the processing width error and the offset error corresponding to the bus electrode included in the second electrode, and N1 is the sum of the difference value of the overlapping distance between the laser spot size and the adjacent laser spot and M1. In this case, it is possible to prevent the electric leakage while avoiding the waste of energy or the small range of the first region due to the provision of a large number of spots, and to ensure the high workability of the fabricated back contact battery.
As one possible implementation manner, a distance between an edge of the adjusted laser spot pattern and the bus electrode included in the first electrode along the second direction is greater than or equal to M2 and less than N2. Wherein M2 is one half of the difference between the laser spot size and the overlapping distance of the adjacent laser spots, and N2 is the sum of the processing width error and the offset error corresponding to the bus electrode included in the first electrode and M2. In this case, it is possible to prevent the electric leakage while avoiding the waste of energy or the small range of the first region due to the provision of a large number of spots, and to ensure the high workability of the fabricated back contact battery.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
fig. 1 is a schematic diagram of distribution positions of a first electrode and a second electrode included in a back contact battery in the related art, and an enlarged schematic diagram of corresponding positions of the first electrode and the second electrode;
fig. 2 is a schematic diagram of distribution positions of a first electrode and a second electrode, and an enlarged schematic diagram of corresponding positions of the first electrode and the second electrode, which are included in a back contact battery according to an embodiment of the present invention;
Fig. 3 is a schematic longitudinal sectional view of a portion of a structure of a back contact battery according to an embodiment of the present invention at a second electrode;
fig. 4 is a schematic longitudinal sectional view of a portion of a structure of a back contact battery according to an embodiment of the present invention at a first electrode.
Reference numerals: 11 is a first region, 12 is a second region, 13 is a first electrode, 14 is a second electrode, 15 is a collector electrode, 16 is a collector electrode, 17 is a collector electrode segment, L1 is a first distance, L2 is a second distance, L3 is a third distance, L4 is a fourth distance, L5 is a fifth distance, and L6 is a sixth distance.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
Various structural schematic diagrams according to embodiments of the present disclosure are shown in the drawings. The figures are not drawn to scale, wherein certain details are exaggerated for clarity of presentation and may have been omitted. The shapes of the various regions, layers and relative sizes, positional relationships between them shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present therebetween. In addition, if one layer/element is located "on" another layer/element in one orientation, that layer/element may be located "under" the other layer/element when the orientation is turned. In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise. The meaning of "a number" is one or more than one unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Currently, solar cells are increasingly used as new energy alternatives. Among them, a photovoltaic solar cell is a device that converts solar light energy into electric energy. Specifically, the solar cell generates carriers by utilizing the photovoltaic principle, and then the carriers are led out by using the electrodes, so that the electric energy can be effectively utilized.
When the positive electrode and the negative electrode of the solar cell are positioned on the backlight surface of the solar cell, the solar cell is a back contact cell. The light-directing surface of the back contact battery has no influence of shielding of the metal electrode, so that compared with a solar battery with shielding of the light-directing surface, the back contact battery has higher short-circuit current and photoelectric conversion efficiency, and is one of the technical directions for realizing the high-efficiency crystalline silicon battery at present. Specifically, as shown in fig. 1, the back contact battery includes a first electrode 13 and a second electrode 14, which are opposite in conductivity type, each formed on the backlight side of the battery substrate. In this regard, in an actual manufacturing process, a doped semiconductor layer is generally formed on a whole layer on a backlight side of a semiconductor substrate, and a portion of the doped semiconductor layer is removed by laser etching or the like, so as to form a battery substrate in which a first region 11 and a second region 12 (the conductivity types of the first region 11 and the second region 12 are opposite) are alternately distributed on the backlight side. Then, the first electrode 13 and the second electrode 14 are formed on the backlight side of the battery substrate. Wherein the first electrode 13 and the second electrode 14 each include a plurality of collector electrodes 15 and a plurality of bus electrodes 16. The bus electrodes 16 included in the first electrode 13 and the bus electrodes 16 included in the second electrode 14 each extend in the first direction and are alternately spaced apart in the second direction (the second direction being different from the first direction). The collector electrode 15 included in the first electrode 13 is in ohmic contact with the first region 11, the collector electrode 15 included in the second electrode 14 is in ohmic contact with the second region 12, and the collector electrodes 15 included in the first electrode 13 and the collector electrodes 15 included in the second electrode 14 each extend in the second direction and are alternately spaced apart in the first direction. Each collector electrode 15 is connected with a collector electrode 16 with the same polarity, and each collector electrode 15 comprises a plurality of collector electrode segments 17 distributed at intervals along the second direction, and two adjacent collector electrode segments 17 in the same collector electrode 15 are provided with intervals for separating the collector electrode 16 with the opposite polarity to the collector electrode to prevent electric leakage.
And the distance between the end part of each current collecting electrode section included in the first electrode and the adjacent bus electrode included in the second electrode is a first distance along the second direction. And along the second direction, the distance between the end part of each current collecting electrode section in the second electrode and the adjacent bus electrode included in the first electrode is a second distance. As shown in fig. 1, in the conventional back contact battery, the first distance L1 is equal to the second distance L2, and at this time, the first distance L1 and the second distance L2 cannot be set independently according to the morphology of the first region 11 and the second region 12 obtained after the doped semiconductor layer is patterned by using a process such as laser etching, which is easy to cause leakage due to overlapping of the end of the collector electrode segment 17 included in the first electrode 13 along the second direction to the second region 12, which is not beneficial to improving the electrical stability of the back contact battery.
In order to solve the technical problems described above, in a first aspect, an embodiment of the present invention provides a back contact battery. As shown in fig. 2, the back contact battery includes: a battery substrate, and a first electrode 13 and a second electrode 14 formed on a backlight surface provided on the battery substrate. The backlight surface of the battery substrate has first regions 11 and second regions 12 alternately distributed. The conductivity types of the first region 11 and the second region 12 are opposite. The projection of the first electrode 13 onto the backlight surface is located in the first region 11. The projection of the second electrode 14 onto the backlight is located within the second region 12. Each of the first electrode 13 and the second electrode 14 includes a plurality of collector electrodes 15 and a plurality of bus electrodes 16. The bus electrodes 16 included in the first electrode 13 and the bus electrodes 16 included in the second electrode 14 each extend in a first direction and are alternately spaced apart in a second direction, the first direction being different from the second direction. The collector electrode 15 included in the first electrode 13 is in ohmic contact with the first region 11, the collector electrode 15 included in the second electrode 14 is in ohmic contact with the second region 12, and the collector electrodes 15 included in the first electrode 13 and the collector electrodes 15 included in the second electrode 14 each extend in the second direction and are alternately spaced apart in the first direction. Each collector electrode 15 is connected to a collector electrode 16 of the same polarity as itself, and each collector electrode 15 includes a plurality of collector electrode segments 17 spaced apart in the second direction, and adjacent two collector electrode segments 17 in the same collector electrode 15 have a spacing for separating the collector electrode 16 of the opposite polarity from itself. Wherein, along the second direction, the distance between the end of each collector electrode segment 17 in the first electrode 13 and the adjacent bus electrode 16 included in the second electrode 14 is the first distance L1. In the second direction, the end of each collector electrode segment 17 in the second electrode 14 is spaced apart from the adjacent bus electrode 16 comprised by the first electrode 13 by a second distance L2. The first distance L1 is greater than the second distance L2.
In particular, the structure and the material of the battery substrate and the conductivity types of the first region and the second region are not particularly limited in the embodiment of the present invention, so long as the embodiment of the present invention can be applied to the back contact battery provided in the embodiment of the present invention.
Illustratively, the above battery substrate may include: a semiconductor substrate, and a doped semiconductor layer formed on a partial region of a backlight surface of the semiconductor substrate. The area of the backlight surface of the semiconductor substrate exposed outside the doped semiconductor layer is a first area, and the area of one side of the doped semiconductor layer, which is away from the semiconductor substrate, is a second area. Secondly, the conductivity types of the doped semiconductor layer and the semiconductor substrate can be the same, and the battery base further comprises a second doped semiconductor layer which is opposite to the conductivity type of the semiconductor substrate and is formed on a part of the surface of the semiconductor substrate corresponding to the first region; alternatively, the doped semiconductor layer may also be of opposite conductivity type to the semiconductor substrate. It should be noted that when the conductivity types of the doped semiconductor layer and the semiconductor substrate are opposite, in the actual process of manufacturing the battery base, only a whole doped semiconductor layer covering the backlight surface of the semiconductor substrate is required to be formed, and part of the doped semiconductor layer is removed, so that the first region and the second region with opposite conductivity types can be formed on one side of the backlight surface, thereby solving the problem that the manufacturing flow of the back contact battery is complex due to the need of carrying out two times of doping with opposite conductivity types on the backlight surface.
Specifically, in terms of conductivity type, the semiconductor substrate may be an N-type semiconductor substrate, and if the conductivity types of the doped semiconductor layer and the N-type semiconductor substrate are the same, the doped semiconductor layer is an N-type doped semiconductor layer, the first region is a P-type region, and the second region is an N-type region; if the conductivity types of the doped semiconductor layer and the N-type semiconductor substrate are opposite, the doped semiconductor layer is a P-type doped semiconductor layer, the first area is an N-type area, and the second area is a P-type area;
alternatively, the semiconductor substrate may be a P-type semiconductor substrate, and if the conductivity types of the doped semiconductor layer and the N-type semiconductor substrate are the same, the doped semiconductor layer is a P-type doped semiconductor layer, the first region is an N-type region, and the second region is a P-type region; if the conductivity types of the doped semiconductor layer and the P-type semiconductor substrate are opposite, the doped semiconductor layer is an N-type doped semiconductor layer, the first region is a P-type region, and the second region is an N-type region.
In terms of materials, the material of the semiconductor substrate may include any semiconductor material such as silicon, silicon germanium, germanium or gallium arsenide. As for the above-mentioned doped semiconductor layer, the material of the doped semiconductor layer may include any semiconductor material such as silicon, silicon germanium, silicon carbide, or gallium arsenide. The doped semiconductor layer may be amorphous, microcrystalline, single crystal, nanocrystalline, polycrystalline, or the like in terms of the internal arrangement form of the substance.
In some cases, the battery base may further include a passivation layer between the semiconductor substrate and the doped semiconductor layer. The passivation layer can passivate at least a portion of the surface of the semiconductor substrate in contact with the doped semiconductor layer, reducing the rate at which carriers recombine at the contact of the two. And the doped semiconductor layer formed on the passivation layer can realize selective collection of carriers of corresponding conductivity types in the semiconductor substrate, so that the photoelectric conversion efficiency of the back contact battery provided by the embodiment of the invention is further improved. In particular, the material of the passivation layer may be determined according to the material of the doped semiconductor layer.
For example: when the doped semiconductor layer is a doped amorphous silicon layer, a doped microcrystalline silicon layer, or a mixed layer of doped amorphous silicon and microcrystalline silicon, the passivation layer may be an intrinsic amorphous silicon layer, an intrinsic microcrystalline silicon layer, or a mixed layer of intrinsic amorphous silicon and microcrystalline silicon. At this time, the doped semiconductor layer and the passivation layer may constitute a hetero-contact structure.
Also for example: when the doped semiconductor layer is a doped polysilicon layer, the passivation layer is a tunneling passivation layer. At this time, the doped semiconductor layer and the passivation layer may constitute a tunneling passivation contact structure. In addition, the material of the tunneling passivation layer may include any dielectric material having a tunneling passivation effect. For example: the material of the tunnel passivation layer may include one or more of silicon oxide, aluminum oxide, titanium oxide, hafnium oxide, gallium oxide, tantalum pentoxide, niobium pentoxide, silicon nitride, silicon carbonitride, aluminum nitride, titanium carbonitride.
When the semiconductor substrate included in the battery base is a P-type semiconductor substrate, the doped semiconductor layer is an N-type doped polysilicon layer, and a tunneling passivation layer is formed between the P-type semiconductor substrate and the N-type doped polysilicon layer, the back contact battery provided by the embodiment of the invention is an HPBC (hybrid passivation back contact) battery.
For the first electrode and the second electrode, the material of the first electrode or the second electrode may include a conductive material such as silver, aluminum, copper, titanium, or nickel. The materials of the first electrode and the second electrode may be the same or different.
In terms of polarity, since the collector electrode included in the first electrode is in ohmic contact with the first region and the collector electrode included in the second electrode is in ohmic contact with the second region, the polarities of the first electrode and the second electrode may be determined according to the conductivity types of the first region and the second region, respectively.
For example: when the first region is an N-type region and the second region is a P-type region, the first electrode is a negative electrode and the second electrode is a positive electrode.
Also for example: when the first region is a P-type region and the second region is an N-type region, the first electrode is a positive electrode and the second electrode is a negative electrode.
It is understood that one collector electrode included in the positive electrode is opposite in polarity to one collector electrode included in the negative electrode (or one collector electrode included in the negative electrode), and is the same in polarity as the other collector electrode included in the positive electrode (or one collector electrode included in the positive electrode). Similarly, one of the bus electrodes included in the positive electrode has a polarity opposite to that of one of the collector electrodes included in the negative electrode (or one of the collector electrodes included in the negative electrode), and is the same as that of the other of the collector electrodes included in the positive electrode (or one of the collector electrodes included in the positive electrode). Accordingly, the same or opposite polarity electrodes as the collector electrode and the bus electrode included in the negative electrode, respectively, may be referred to as the foregoing, and will not be described herein.
In terms of morphology, the bus electrodes included in the first electrode and the second electrode may be linear bus electrodes, wavy linear bus electrodes, zigzag bus electrodes, or the like. The specific shape of the bus electrode included in the first electrode and the second electrode may be set according to an actual application scenario, and is not particularly limited herein. In addition, the collector electrodes included in the first electrode and the second electrode may be linear collector electrodes, wavy linear collector electrodes, zigzag collector electrodes, or the like, and the specific shape of the collector electrodes included in the first electrode and the second electrode may be set according to the actual application scenario, and is not specifically limited herein.
As for the first direction and the second direction, they may be any two directions which are parallel to the backlight surface and are different from each other. Preferably, the first direction is orthogonal to the second direction.
In terms of number and size, the number and specification of the collector electrodes and the bus electrodes included in the first electrode and the second electrode, the gaps between the collector electrodes included in the first electrode and the adjacent collector electrodes included in the second electrode along the first direction, and the gaps between the bus electrodes included in the first electrode and the adjacent collector electrodes included in the second electrode along the second direction may be set according to practical application scenarios, so long as the method can be applied to the back contact battery provided in the embodiment of the present invention. In practical applications, the number of bus electrodes included in the first electrode and the second electrode may be the same or different. The number of collector electrodes included in each of the first electrode and the second electrode may be the same or different. Further, in the first electrode, the number of collector electrode segments included in each collector electrode may be determined according to the number of bus electrodes included in the second electrode. In the second electrode, the number of collector electrode segments included in each collector electrode may be determined according to the number of collector electrodes included in the first electrode.
As for the size of the distance (i.e., the first distance) between the end of each collecting electrode segment in the first electrode and the adjacent collecting electrode included in the second electrode, and the size of the distance (i.e., the second distance) between the end of each collecting electrode segment in the second electrode and the adjacent collecting electrode included in the first electrode, may be determined according to actual requirements, as long as the first distance is made larger than the second distance, and may be applied to the back contact battery provided in the embodiment of the present invention.
With the above technical solution, the collector electrode included in the first electrode is in ohmic contact with the first region, and is configured to collect carriers of a corresponding conductivity type in the first region and conduct the carriers to the collector electrode included in the first electrode. The second electrode includes a collector electrode in ohmic contact with the second region for collecting carriers of the corresponding conductivity type in the second region and conducting to a collector electrode included in the second electrode. Because of this, the first and second regions alternately arranged on the backlight side of the battery substrate are opposite in conductivity type, so are the first and second electrodes. In the above case, as shown in fig. 2, among the first electrode 13 and the second electrode 14, the same collector electrode 15 includes adjacent two collector electrode segments 17 having a space for separating the collector electrode 16 having the opposite polarity to itself, suppressing electric leakage.
And, as shown in fig. 2 to 4, in the second direction, the end of each collector electrode segment 17 in the first electrode 13 is spaced apart from the adjacent bus electrode 16 included in the second electrode 14 by a first distance L1. In the second direction, the end of each collector electrode segment 17 in the second electrode 14 is spaced apart from the adjacent bus electrode 16 comprised by the first electrode 13 by a second distance L2. The first distance L1 is greater than the second distance L2. At this time, the end of each collector electrode segment 17 in the first electrode 13 may be isolated from the adjacent collector electrode 16 included in the second electrode 14 by the first distance L1 having a larger length, so that the end of each collector electrode segment 17 in the second direction in the first electrode 13 is ensured not to overlap the second region 12 having the opposite conductivity type to itself and the adjacent collector electrode 16 included in the second electrode 14, and the current leakage is prevented, and at the same time, the carrier collecting capability of each collector electrode segment 17 in the second electrode 14 may be improved by reducing the distance between the end of each collector electrode segment 17 in the second direction in the second electrode 14 and the first region 11 to a larger extent while ensuring that the end of each collector electrode segment 17 in the second direction in the second electrode 14 is not overlapped to the first region 11 having the opposite conductivity type to itself and the adjacent collector electrode 16 included in the first electrode 13. In other words, according to the back contact battery provided by the embodiment of the invention, the distance between the end part of each collector electrode segment 17 in the positive electrode and the adjacent collector electrode 16 included in the negative electrode and the distance between the end part of each collector electrode segment 17 in the negative electrode and the adjacent collector electrode 16 included in the positive electrode can be independently regulated and controlled according to the practical application scene, so that the electrical stability of the back contact battery can be improved while leakage is prevented, the collector electrode segments 17 have relatively strong carrier collection capability, and the photoelectric conversion efficiency of the back contact battery can be improved.
In practical application, as shown in fig. 2 and 3, the first distance L1 is equal to the sum of the third distance L3 and the fifth distance L5. Specifically, in the second direction, the end of each collector electrode segment 17 in the first electrode 13 is spaced from the edge of the second region 12 by a third distance L3. Since each of the collector electrodes 15 included in the first electrode 13 is in ohmic contact with the first region 11 and the conductivity type of the second region 12 is opposite to that of the first region 11, the magnitude of the third distance L3 affects whether or not electric leakage occurs between the end of each of the collector electrode segments 17 in the first electrode 13 in the second direction and the edge of the second region 12, and affects the carrier collection of the corresponding portion of the first region 11 by each of the collector electrode segments 17 in the first electrode 13. In addition, in the second direction, the minimum distance between the edge of the first region 11 and the edge of the bus electrode 16 in the second electrode 14 is the fifth distance L5. In the actual manufacturing process, the slurry state of the second electrode 14 affects the width of the bus electrode 16 included in the formed second electrode 14, and the stage accuracy of the second electrode 14 affects the position offset of the bus electrode 16 included in the formed second electrode 14, so that the fifth distance L5 also affects whether the bus electrode 16 included in the second electrode 14 is overlapped.
As for the above-described second distance, as shown in fig. 2 to 4, the second distance L2 is equal to the sum of the fourth distance L4 and the sixth distance L6. Specifically, in the second direction, the minimum distance between the edge of each bus electrode 16 in the first electrode 13 and the edge of the second region 12 is the fourth distance L4. Since the size of the fourth distance L4 affects the range of the first region 11 and the second region 12 are located on the backlight side together, the fourth distance L4 affects the PN junction range on the backlight side and further affects the collection of carriers. Meanwhile, in the actual manufacturing process, the slurry state of the first electrode 13 may affect the width of the bus electrode 16 included in the formed first electrode 13, and the stage accuracy of manufacturing the first electrode 13 may affect the amount of positional deviation of the bus electrode 16 included in the formed first electrode 13, so the fourth distance L4 may also affect whether the bus electrode 16 included in the first electrode 13 is overlapped. In addition, in the second direction, the distance between the edge of the first region 11 and the end of the collector electrode segment 17 in the second electrode 14 is the sixth distance L6. Since each of the collector electrodes 15 included in the second electrode 14 is in ohmic contact with the second region 12 and the conductivity type of the first region 11 is opposite to the conductivity type of the second region 12, the magnitude of the sixth distance L6 affects whether or not the end of each of the collector electrode segments 17 in the second electrode 14 in the second direction generates a leakage between the edge of the first region 11 and affects the carrier collection of the corresponding portion of the second region 12 by each of the collector electrode segments 17 in the second electrode 14.
In the above-described case, the third distance and the fifth distance included in the first distance, and the fourth distance and the sixth distance included in the second distance may be determined according to the contact condition of the bus electrode in the first electrode and the first area, the contact condition of the bus electrode in the second electrode and the second area, the anti-leakage requirement for the first electrode and the second electrode respectively between the second area and the first area in the actual application scenario, and the collection requirement for the first electrode and the second electrode respectively for carriers generated in the first area and the second area in the actual application scenario, which is not specifically limited herein.
In the practical application process, each bus electrode included in the first electrode may be in direct contact with the first area. At this time, the contact area between the first electrode and the first region is larger, which is beneficial to reducing the contact resistance between the first electrode and the first region. Alternatively, each bus electrode included in the first electrode may not be in direct contact with the first region. In this case, the above-described battery substrate may further include an insulating material layer (which may be a passivation anti-reflection layer or the like on the backlight side) on at least the first region, the first electrode including a collector electrode penetrating the insulating material layer and being in contact with the first region, the first electrode including a collector electrode isolated from the first region by the insulating material layer. Each bus electrode included in the first electrode is electrically coupled to the first region through a corresponding collector electrode segment included in the first electrode. In the above case, in order to prevent leakage, it is not necessary to include a leakage factor between the edge of the bus electrode included in the first electrode and the edge of the second region when the set size of the second distance is taken into consideration. And when the setting size of the first distance is considered, the leakage factor between the end part of the current collecting electrode section of the first electrode along the second direction and the edge of the second area still needs to be included, so that the first distance is set to be larger than the second distance, and the carrier collecting capability of each current collecting electrode section in the second electrode can be improved while the overlap leakage of the end part of each current collecting electrode section in the first electrode along the second direction can be prevented.
As for the second electrode, each of the bus electrodes included in the second electrode may be in direct contact with the second region. At this time, the contact area between the second electrode and the second region is larger, which is beneficial to reducing the contact resistance between the second electrode and the second region. Alternatively, each bus electrode included in the second electrode may not be in direct contact with the second region. In this case, the above-described battery substrate may further include an insulating material layer at least on the second region, the second electrode including a collector electrode penetrating the insulating material layer and being in contact with the second region, the second electrode including a collector electrode isolated from the second region by the insulating material layer. Each bus electrode included in the second electrode is electrically coupled to the second region through a corresponding collector electrode segment included in the second electrode. In the above case, when the bus electrode included in the second electrode is not in direct contact with the second region, the contact area between the second electrode and the second region is smaller than when the bus electrode included in the second electrode is also in direct contact with the second region, when other factors are the same. In this case, when the back contact battery further includes an insulating material layer having a passivation effect disposed on the backlight side of the battery substrate, if the contact area between the second electrode and the second region is smaller, the contact area between the insulating material layer having a passivation effect and the second region is larger, so that the passivation effect of the insulating material layer having a passivation effect on the backlight side of the battery substrate can be improved, which is beneficial to improving the working performance of the back contact battery.
As illustrated in fig. 2 to 4, the third distance L3 is greater than the fourth distance L4. In this case, it is ensured that the end portion of each collector electrode segment 17 of the first electrode 13 along the second direction is prevented from overlapping the second region 12 opposite to the conductivity type thereof by the third distance L3 having a larger length, so that electric leakage is avoided, and at the same time, there is no need to increase the distance between the edge of each collector electrode 16 of the first electrode 13 and the edge of the second region 12 along the second direction due to the processing width error and the offset error of the collector electrode 16 included in the formation of the first electrode 13, it is ensured that the first region 11 and the second region 12 which are located together on the backlight side have a suitable range, the carrier recombination rate on the backlight side is reduced, and the photoelectric conversion efficiency of the back contact battery is facilitated to be improved.
Illustratively, the third distance may be greater than or equal to 0.15mm and less than or equal to 0.3mm. For example: the third distance may be 0.15mm, 0.18mm, 0.2mm, 0.22mm, 0.25mm, 0.28mm, 0.3mm, or the like. In this case, the third distance is within the above-described range, and it is possible to prevent the leakage preventing effect between the end of each collector electrode segment in the first electrode in the second direction and the edge of the second region from being poor due to the small third distance, ensuring high electrical stability of the back contact battery. In addition, carriers of the corresponding conductivity type generated near the edge of the first region are difficult to collect at the end part of each current collecting electrode section in the first electrode along the second direction due to the large third distance, so that the high carrier collecting capacity of each current collecting electrode section in the first electrode is ensured, and further the high photoelectric conversion efficiency of the back contact battery is ensured.
Illustratively, the fourth distance may be greater than or equal to 0.07mm and less than 0.15mm. For example: the fourth distance may be 0.07mm, 0.09mm, 0.11mm, 0.13mm, 0.14mm, or the like. In this case, the fourth distance is within the above range, and it is possible to prevent the part of the bus electrode included in the actually formed first electrode from being located above the second region due to the small machining allowance left due to the small fourth distance, ensuring that the overlap leakage problem of the bus electrode included in the first electrode can be prevented by the fourth distance. Meanwhile, the manufacturing precision of the bus electrode in the first electrode is also prevented from being strictly required to avoid electric leakage, and the manufacturing difficulty of the bus electrode in the first electrode is reduced. In addition, the range of the second area which is positioned on the side of the backlight surface together with the first area is prevented from being smaller due to the fact that the fourth distance is larger, the carrier recombination rate on the side of the backlight surface is reduced, and the photoelectric conversion efficiency of the back contact battery is improved.
As shown in fig. 2 to 4, the ratio of the third distance L3 to the fourth distance L4 is greater than 1 and equal to or less than 2. For example: the ratio of the third distance L3 to the fourth distance L4 may be 1.3, 1.5, 1.8 or 2. The beneficial effects of this case are similar to those of the third distance L3 of 0.15mm or more and 0.3mm or less and the fourth distance L4 of 0.07mm or more and 0.15mm or less, and are not described here again.
As shown in fig. 2 to 4, the ratio of the fifth distance L5 to the sixth distance L6 is equal to or greater than 0.8 and equal to or less than 1.2. For example: the ratio of the fifth distance L5 to the sixth distance L6 may be 0.8, 0.9, 1, 1.1 or 1.2. In this case, the above-described fifth distance L5 and sixth distance L6 are pitches of the edges of the bus electrode 16 and the ends of the collector electrode segments 17 in the second electrode 14, respectively, in the second direction, from the edges of the first region 11 opposite in conductivity type to itself, respectively. Based on this, in the actual manufacturing process, the fifth distance L5 and the sixth distance L6 need to take into account machining errors of the bus electrode 16 and the collector electrode segment 17 in the second electrode 14, respectively, so as to reserve a corresponding space to prevent the edges of the bus electrode 16 and the ends of the collector electrode segment 17 in the second electrode 14 from overlapping to the first region 11 of opposite conductivity types. Since the processing errors of the bus electrode 16 and the collector electrode segment 17 included in the second electrode 14 are substantially the same when the ratio of the fifth distance L5 to the sixth distance L6 is equal to or greater than 0.8 and equal to or less than 1.2, it is possible to prevent a part of carriers in the second region 12 from being able to be timely conducted out due to a larger one of the fifth distance L5 and the sixth distance L6 while ensuring that the edges of the bus electrode 16 and the ends of the collector electrode segment 17 in the second electrode 14 are electrically leaked from the first region 11, respectively, and to ensure a high photoelectric conversion efficiency of the back contact battery.
It is understood that when the back contact battery includes different specifications of the battery substrate, the requirements for the anticreep and carrier collection capabilities of the first electrode and the second electrode may also be different. In addition, the accuracy of the first electrode and the second electrode manufactured by different machine stations or different slurries may be different, so that the fifth distance and the sixth distance may be determined according to the specification of the battery substrate in the practical application scenario and the practical manufacturing process.
For example: the absolute value of the difference between the fifth distance and the sixth distance may be 0 or more and 300 μm or less.
For example: the fifth distance may be greater than 0 and equal to or less than 3mm. The sixth distance may be greater than 0 and equal to or less than 3mm.
In a second aspect, an embodiment of the present invention further provides a method for manufacturing a back contact battery, where the method for manufacturing a back contact battery includes:
first, a battery substrate is formed. The backlight surface of the battery substrate has first and second regions alternately distributed. Next, a region pattern of the first region, design structure related parameters corresponding to the first electrode and the second electrode included in the back contact battery, first performance adjustment related parameters corresponding to the first electrode, and second performance adjustment related parameters corresponding to the second electrode are obtained. The first performance adjustment related parameter is different from the second performance adjustment related parameter. And as shown in fig. 2, the first electrode 13 and the second electrode 14 each include a plurality of collector electrodes 15 and a plurality of bus electrodes 16. The bus electrodes 16 included in the first electrode 13 and the bus electrodes 16 included in the second electrode 14 each extend in a first direction and are alternately spaced apart in a second direction, the first direction being different from the second direction. The collector electrodes 15 included in the first electrode 13 and the collector electrodes 15 included in the second electrode 14 each extend in the second direction and are alternately spaced apart in the first direction. Each collector electrode 15 is connected to a collector electrode 16 of the same polarity as itself, and each collector electrode 15 includes a plurality of collector electrode segments 17 spaced apart in the second direction, and adjacent two collector electrode segments 17 in the same collector electrode 15 have a spacing for separating the collector electrode 16 of the opposite polarity from itself. Next, based on the region pattern, the design structure related parameter, and the first performance adjustment related parameter, the pitch of each collecting electrode segment 17 in the first electrode 13 and the adjacent bus electrode 16 included in the second electrode 14 is adjusted to the first distance L1, and the design structure related parameter is updated. Next, based on the region pattern, the design structure related parameter, and the second performance adjustment related parameter, the pitch of each collector electrode segment 17 in the second electrode 14 from the adjacent bus electrode 16 included in the first electrode 13 is adjusted to the second distance L2, and the design structure related parameter is updated. Then, the first electrode 13 and the second electrode 14 are formed on the backlight surface according to the updated design structure related parameters. As shown in fig. 2, the projection of the first electrode 13 onto the backlight surface is located in the first region 11. The projection of the second electrode 14 onto the backlight is located within the second region 12.
The specific structure and materials of the above battery substrate, and the polarities and dimensions of the first electrode and the second electrode may be referred to in the foregoing, and will not be described herein.
The area pattern of the first area refers to a pattern corresponding to a formation range of the first area on the backlight side of the battery substrate. The design structure related parameters corresponding to the first electrode and the second electrode may include any parameters related to the dimensions of the structures of the first electrode and the second electrode. For example: the design structure related parameters may include a design length and a design width of each bus electrode included in the first electrode and the second electrode, a design pitch of different bus electrodes, a design length of a collector electrode segment, a design pitch of different collector electrodes, a design pitch of an end of a collector electrode segment included in the first electrode and an adjacent bus electrode included in the second electrode along the second direction, a design pitch of an end of a collector electrode segment included in the second electrode and an adjacent bus electrode included in the first electrode along the second direction, and the like. The design distance between the end of the current collecting electrode section included in the first electrode and the adjacent bus electrode included in the second electrode along the second direction, and the design distance between the end of the current collecting electrode section included in the second electrode and the adjacent bus electrode included in the first electrode along the second direction may be equal or unequal.
In the practical application process, the length and the width of the bus electrode included in the first electrode and the second electrode have a great influence on the consumption of electrode slurry and the transmission resistance, so that the size of the bus electrode included in the first electrode and the second electrode is usually designed size, and is not optimized. The collector electrodes included in the first electrode and the second electrode mainly affect battery leakage and carrier collection, and the embodiment of the invention adjusts the distance between each collector electrode segment in the first electrode and the adjacent collector electrode included in the second electrode and the distance between each collector electrode segment in the second electrode and the adjacent collector electrode included in the first electrode according to the first performance adjustment related parameter and the second performance adjustment related parameter. Based on this, the first performance adjustment related parameter may include a parameter related to battery leakage and carrier collection by the first electrode. The second performance adjustment related parameter may include a second electrode pair battery leakage and carrier collection related parameter. Specifically, the area pattern of the first area, the design structure related parameters corresponding to the first electrode and the second electrode included in the back contact battery, the first performance adjustment related parameters corresponding to the first electrode, and the specific information of the second performance adjustment related parameters corresponding to the second electrode and the acquisition sequence of the parameters are not specifically limited, so long as the method can be applied to the manufacturing method provided by the embodiment of the present invention.
Under the circumstances of the foregoing technical solutions, in the manufacturing method of a back contact battery provided by the embodiments of the present invention, after obtaining the area pattern of the first area, the design structure association parameter corresponding to the first electrode and the second electrode included in the back contact battery, the first performance adjustment association parameter corresponding to the first electrode, and the second performance adjustment association parameter corresponding to the second electrode, the interval between each current collecting electrode segment in the first electrode and the adjacent current collecting electrode included in the second electrode, and the interval between each current collecting electrode segment in the second electrode and the adjacent current collecting electrode included in the first electrode are respectively adjusted according to the different first performance adjustment association parameters and the second performance adjustment association parameters, so that leakage current can be prevented from being generated by overlapping the current collecting electrode with opposite polarity at the end of each current collecting electrode segment in the second direction included in the first electrode and the second electrode, and the electrical stability of the back contact battery is improved, and meanwhile, the electrode segments in the second electrode segments have relatively strong current collecting capacity, which is beneficial to improving the photoelectric conversion efficiency of the back contact battery.
In an actual manufacturing process, the specific process of manufacturing the battery substrate may be determined according to the specific structure of the battery substrate.
Illustratively, the forming a battery substrate may include the steps of: a doped semiconductor layer is formed over the back surface of the semiconductor substrate. And then, removing the part of the doped semiconductor layer positioned on the first region by adopting a laser etching process so as to form the battery substrate. The battery base includes a semiconductor substrate and a remaining doped semiconductor layer.
Specifically, the doped semiconductor layer may be formed by a chemical vapor deposition process or the like. The material of the doped semiconductor layer may be referred to above, and will not be described here again. In addition, the conductivity type of the doped semiconductor layer may be the same as or different from the conductivity type of the semiconductor substrate. When the conductivity type of the doped semiconductor layer is opposite to that of the semiconductor substrate, the first region and the second region with opposite conductivity types can be formed on one side of the backlight surface only by forming the doped semiconductor layer which covers the backlight surface of the semiconductor substrate entirely and removing the part of the doped semiconductor layer which covers the first region, so that the problem that the manufacturing process of the back contact battery is complex due to the fact that the backlight surface is required to be doped twice with opposite conductivity types can be solved.
After forming the whole doped semiconductor layer arranged on one side of the backlight surface, a laser etching process can be adopted to remove the part of the doped semiconductor layer positioned on the first area, so as to obtain the battery substrate. Of course, the portion of the doped semiconductor layer located on the first region may also be removed by dry etching or wet etching under the mask action of the corresponding mask layer.
In the case where the battery base further includes a passivation layer between the semiconductor substrate and the doped semiconductor layer, a passivation layer disposed entirely on a backlight surface side of the semiconductor substrate is formed by a chemical vapor deposition process or the like before forming the entirely disposed doped semiconductor layer on the backlight surface of the semiconductor substrate. Then, after removing the portion of the doped semiconductor layer located on the first region, it is also necessary to remove the portion of the passivation layer located on the first region to obtain the battery substrate.
Specifically, under the condition that at least a portion of the doped semiconductor layer located on the first area is removed by adopting a laser etching process, after a whole layer of the doped semiconductor layer is formed on the backlight surface of the semiconductor substrate, design structure related parameters corresponding to the first electrode and the second electrode and laser etching related parameters can be acquired first. Next, a laser spot pattern may be determined based on the design structure related parameters and the laser etch related parameters. And then, adopting a laser etching process, and etching the doped semiconductor layer according to the laser spot pattern to obtain the battery substrate.
The laser etching related parameter may include any parameter related to laser etching. Illustratively, the laser etching related parameters may include: the laser spot size, the overlapping distance of adjacent laser spots, the design distance between the edge of the laser spot pattern and the end part of each current collecting electrode section in the first electrode along the second direction, and the design distance between the edge of the laser spot pattern and the current collecting electrode included in the first electrode along the second direction. In this case, the range corresponding to the set corresponding number of laser spots can be determined by combining the laser spot size and the overlapping distance of the adjacent laser spots. And the designed spacing between the edge of the laser spot pattern and the end part of each current collecting electrode section in the first electrode along the second direction and the designed spacing between the edge of the laser spot pattern and the bus electrode included in the first electrode along the second direction define the boundary of the laser spot pattern to be determined. Based on the above, when the laser etching related parameters include the laser spot size, the overlapping distance of the adjacent laser spots, the design distance between the edge of the laser spot pattern and the end of each collector electrode segment in the first electrode along the second direction, and the design distance between the edge of the laser spot pattern and the collector electrode included in the first electrode along the second direction, the laser spot pattern can be accurately determined according to the design structure related parameters and the laser etching related parameters, so that the determination accuracy of the laser spot pattern is improved.
Specifically, the designed distance between the edge of the laser spot pattern and the end of each current collecting electrode segment in the first electrode along the second direction affects the distance between the end of each current collecting electrode segment in the first electrode and the edge of the second region along the second direction, and further affects the battery leakage and the carrier collecting capacity of each current collecting electrode segment in the first electrode to the corresponding part of the first region, so that the size of the designed distance can be determined according to the requirements of the actual application scene on the anti-leakage and the carrier collecting capacity of the first electrode.
Illustratively, the design spacing of the edge of the laser spot pattern from the end of each current collector electrode segment in the first electrode in the second direction is greater than 0 and less than 0.4mm. In this case, the design pitch is within the above-described range, and it is possible to prevent the leakage preventing effect between the end of each collector electrode segment in the first electrode in the second direction and the edge of the second region from being poor due to the small design pitch, ensuring high electrical stability of the back contact battery. In addition, carriers of corresponding conductivity types generated near the edge of the first region can be prevented from being difficult to collect at the end part of each current collecting electrode section in the first electrode along the second direction due to the large design interval, so that the high carrier collecting capacity of each current collecting electrode section in the first electrode is ensured, and further the high photoelectric conversion efficiency of the back contact battery is ensured.
As for the design distance between the edge of the laser spot pattern and the bus electrode included in the first electrode along the second direction, the distance between the bus electrode included in the first electrode and the edge of the second area along the second direction is influenced, and battery leakage is further influenced, so that the size of the design distance can be determined according to the anti-leakage requirement of the first electrode in an actual application scene and the actual condition of the laser spot.
The design distance between the edge of the laser spot pattern and the bus electrode included in the first electrode along the second direction is equal to one half of the difference between the overlapping distance of the laser spot size and the adjacent laser spot. For example: when the laser spot size is 0.2mm to 0.3mm and the overlapping distance of adjacent laser spots is about 0.05mm, the design pitch between the edge of the laser spot pattern and the bus electrode included in the first electrode along the second direction may be 0.075mm to 0.125mm. Under the condition, the number of the laser spots included in the laser spot pattern can only be an integer greater than or equal to 1, so that electric leakage easily occurs when the edge of the laser spot pattern is just overlapped with the bus electrode included in the first electrode, the width of one laser spot is added, corresponding machining allowance can be reserved for two sides of the bus electrode included in the first electrode along the second direction, at the moment, the design distance between the edge of the laser spot pattern and the bus electrode included in the first electrode along the second direction is equal to one half of the difference value between the overlapping distance of the laser spot size and the adjacent laser spots, and therefore electric leakage can be prevented, energy waste caused by more spots is avoided or the range of the second area is smaller, and the manufactured back contact battery is ensured to have higher working performance.
Alternatively, the step of removing the portion of the doped semiconductor layer located on the first region by using a laser etching process may also include the steps of: and acquiring the laser etching related parameters, the first processing error related parameters corresponding to the bus electrode included in the second electrode, and the second processing error related parameters corresponding to the bus electrode included in the first electrode. Next, a laser spot pattern is determined based on the design structure related parameters and the laser etching related parameters. Next, adjusting the distance between the edge of the laser spot pattern and the bus electrode included by the second electrode along the second direction based on the design structure related parameter and the first processing error related parameter; and adjusting the distance between the edge of the laser spot pattern and the bus electrode in the first electrode along the second direction based on the design structure related parameter and the second processing error related parameter. And then, adopting a laser etching process, and etching the doped semiconductor layer according to the adjusted laser spot pattern. In this case, based on the design structure related parameter and the laser etching related parameter, a laser spot pattern (which coincides with a pattern of a first region formed based on a laser etching process later) in a theoretical case can be determined. In the actual machining process of the first electrode and the second electrode, machining errors often exist due to factors such as machine precision or electrode slurry state, and the existence of the machining errors may cause the actual width and the actual forming position of the bus electrode included in the actually machined second electrode to change, so that the distance between the bus electrode included in the second electrode and the edge of the laser spot pattern along the second direction under the theoretical condition no longer meets the working requirement; similarly, the existence of the processing error may cause the actual width and the actual forming position of the bus electrode included in the first electrode that is actually processed to change, so that the distance between the bus electrode included in the first electrode and the edge of the laser spot pattern along the second direction under the theoretical condition may no longer meet the working requirement, and after the laser spot pattern under the theoretical condition is determined, the distance between the edge of the laser spot pattern and the bus electrode included in the second electrode along the second direction and the distance between the edge of the laser spot pattern and the bus electrode in the first electrode are adjusted according to the first processing error related parameter and the second processing error related parameter. Specifically, when it is determined, based on the design structure association parameter and the laser spot pattern, that the distance between the edge of the laser spot pattern and the bus electrode included in the second electrode along the second direction is smaller than the adjustment distance range corresponding to the first machining error association parameter, one or more laser spots are reduced for the portion of the laser spot pattern, which is close to the bus electrode included in the second electrode; and if the distance between the edge of the laser spot pattern and the bus electrode included in the second electrode along the second direction is larger than the adjustment distance range corresponding to the first processing error association parameter based on the design structure association parameter and the laser spot pattern, adding one or more laser spots to the part of the laser spot pattern, which is close to the bus electrode included in the second electrode, until the distance between the edge of the laser spot pattern and the bus electrode included in the second electrode along the second direction is equal to the adjustment distance range corresponding to the first processing error association parameter. Similarly, the foregoing may be referred to in a manner of adjusting the distance between the edge of the laser spot pattern and the bus electrode in the first electrode along the second direction based on the design structure related parameter and the second processing error related parameter, so as to prevent the bus electrode from overlapping and shorting, and improve the yield of the fabricated back contact battery.
Specifically, the laser etching related parameters may be referred to above. The first machining error related parameter may include a parameter that any pair of second electrodes includes a bus electrode having a machining error in an actual manufacturing process. The second machining error related parameter may include a parameter that any pair of first electrodes includes a bus electrode having a machining error in an actual manufacturing process.
For example, the first machining error-related parameter may include a machining width error and an offset error corresponding to the bus electrode included in the second electrode. The size of the machining width error and the offset error corresponding to the bus electrode included in the second electrode is not particularly limited, and the machining width error and the offset error can be determined according to an actual application scene. In this case, the change of the morphology and the position of the bus electrode included in the second electrode caused by the machine precision and the slurry state when the bus electrode included in the second electrode is actually manufactured can be estimated according to the first processing error related parameter, so that the distance between the edge of the laser spot pattern and the bus electrode included in the second electrode along the second direction can be effectively adjusted according to the first processing error related parameter, and the leakage is avoided.
Illustratively, the second machining error related parameter includes a machining width error and an offset error corresponding to the bus electrode included in the first electrode. The size of the machining width error and the offset error corresponding to the bus electrode included in the first electrode is not particularly limited, and the machining width error and the offset error can be determined according to an actual application scene. The beneficial effects in this case may refer to the beneficial effect analysis of the first machining error related parameter described above including the machining width error and the offset error corresponding to the bus electrode included in the second electrode, which will not be described herein.
As for the distance between the edge of the adjusted laser spot pattern and the bus electrode included in the second electrode along the second direction, and the distance between the edge of the adjusted laser spot pattern and the bus electrode included in the first electrode along the second direction, the distance may be determined according to the laser spot size, the overlapping distance of the adjacent laser spots, and the machining width error and the offset error corresponding to the bus electrodes included in the first electrode and the second electrode, which are not specifically limited herein.
Illustratively, as shown in fig. 2, the adjusted distance between the edge of the laser spot pattern and the bus electrode 16 included in the second electrode 14 along the second direction is greater than or equal to M1 and less than N1. Where M1 is the sum of the machining width error and the offset error corresponding to the bus electrode 16 included in the second electrode 14, and N1 is the sum of the difference between the overlapping distances of the laser spot size and the adjacent laser spots and M1. In this case, it is possible to prevent the electric leakage while avoiding the waste of energy due to the provision of a large number of spots or the small range of the first region 11, and to ensure high workability of the fabricated back contact battery.
Illustratively, as shown in fig. 2, the distance between the edge of the adjusted laser spot pattern and the bus electrode 16 included in the first electrode 13 along the second direction is greater than or equal to M2 and less than N2. Where M2 is one half of the difference between the laser spot size and the overlapping distance of the adjacent laser spots, and N2 is the sum of the machining width error and the offset error corresponding to the bus electrode 16 included in the first electrode 13, and M2. In this case, it is possible to prevent the electric leakage while avoiding the waste of energy due to the provision of a large number of spots or the small range of the first region 11, and to ensure high workability of the fabricated back contact battery.
In an actual manufacturing process, after the battery substrate is obtained, the actual ranges of the first region and the second region on the side of the backlight surface of the battery substrate are determined. The obtained parameters related to the design structure of the first electrode and the second electrode, which are used for representing the distance between each current collecting electrode segment in the first electrode and the adjacent bus electrode included in the second electrode, and the distance between each current collecting electrode segment in the second electrode and the adjacent bus electrode included in the first electrode, may not meet the actual working requirements. Based on this, before forming the first electrode, it is also necessary to adjust the relevant parameters based on the region pattern, the design structure relevant parameters, and the first performance, adjust the distance between each collector electrode segment in the first electrode and the adjacent collector electrode included in the second electrode to be the first distance, and update the design structure relevant parameters. In the above case, the first performance adjustment related parameter may include any parameter that has an influence on the operation of the first electrode in an actual application scenario.
Illustratively, the first performance tuning related parameters include a first minimum anticreep spacing and a first maximum collection spacing. The first distance is greater than or equal to the first minimum anticreep interval and less than or equal to the first maximum collection interval. In this case, the distance between each collector electrode segment in the first electrode and the adjacent collector electrode included in the second electrode is set within the minimum distance for preventing leakage and the maximum distance for effectively collecting carriers of the corresponding conductivity type, so that it is possible to ensure that each collector electrode segment in the first electrode can effectively collect carriers of the corresponding conductivity type generated in each part in the first region while avoiding leakage at the end of each collector electrode segment in the first electrode, reduce the carrier recombination rate, and facilitate improvement of the photoelectric conversion efficiency of the back contact battery.
As for the second electrode, before forming the second electrode, it is also necessary to adjust the relevant parameters based on the region pattern, the design structure relevant parameters, and the second performance, adjust the distance between each collecting electrode segment in the second electrode and the adjacent collecting electrode included in the first electrode to a second distance, and update the design structure relevant parameters. In the above case, the second performance adjustment related parameter may include any parameter that has an influence on the operation of the second electrode in the actual application scenario.
The second performance adjustment related parameters include a second minimum anticreep spacing and a second maximum collection spacing. The second distance is greater than or equal to the second minimum anticreep interval and less than or equal to the second maximum collection interval. The first performance adjustment related parameters described above may be referred to in this case as the first performance adjustment related parameters, where the first distance is greater than or equal to the first minimum anticreep distance and less than or equal to the first maximum collection distance, and the first distance is not described herein.
The first performance adjustment related parameters include a first minimum anti-leakage distance and a first maximum collection distance, and the second performance adjustment related parameters include a second minimum anti-leakage distance and a second maximum collection distance, which are not particularly limited, and can be determined according to actual requirements.
In the above-mentioned case, the distance between each collecting electrode segment in the first electrode and the adjacent collecting electrode included in the second electrode and the distance between each collecting electrode segment in the second electrode and the adjacent collecting electrode included in the first electrode are respectively adjusted, and after the design structure related parameters are updated, the first electrode and the second electrode are formed on the backlight surface according to the updated design structure related parameters. At this time, in the second direction, the distance between the end of each collector electrode segment in the first electrode and the adjacent collector electrode included in the second electrode, and the distance between the end of each collector electrode segment in the second electrode and the adjacent collector electrode included in the first electrode may be equal or unequal, as long as the above-described respective conditions can be satisfied.
In the above description, technical details of patterning, etching, and the like of each layer are not described in detail. Those skilled in the art will appreciate that layers, regions, etc. of the desired shape may be formed by a variety of techniques. In addition, to form the same structure, those skilled in the art can also devise methods that are not exactly the same as those described above. In addition, although the embodiments are described above separately, this does not mean that the measures in the embodiments cannot be used advantageously in combination.
The embodiments of the present disclosure are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be made by those skilled in the art without departing from the scope of the disclosure, and such alternatives and modifications are intended to fall within the scope of the disclosure.
Claims (6)
1. A back contact battery, comprising: a battery substrate, and a first electrode and a second electrode formed on a backlight surface provided on the battery substrate;
the backlight surface of the battery substrate is provided with first areas and second areas which are alternately distributed; the first region and the second region are opposite in conductivity type; the battery substrate includes: a semiconductor substrate, and a doped semiconductor layer formed on a partial region of a backlight surface of the semiconductor substrate; the area of the backlight surface of the semiconductor substrate exposed outside the doped semiconductor layer is the first area, and the area of one side of the doped semiconductor layer, which faces away from the semiconductor substrate, is the second area;
The projection of the first electrode on the backlight surface is positioned in the first area; the projection of the second electrode on the backlight surface is positioned in the second area; the first electrode and the second electrode each include a plurality of collector electrodes and a plurality of bus electrodes; the first electrode comprises bus electrodes and the second electrode comprises bus electrodes which extend along a first direction and are alternately distributed at intervals along a second direction, and the first direction is different from the second direction; the collector electrode included in the first electrode is in ohmic contact with the first area, the collector electrode included in the second electrode is in ohmic contact with the second area, and the collector electrodes included in the first electrode and the collector electrodes included in the second electrode extend along the second direction and are alternately distributed at intervals along the first direction; each collector electrode is connected with the collector electrode with the same polarity, and each collector electrode comprises a plurality of collector electrode sections which are distributed at intervals along the second direction, and the interval between two adjacent collector electrode sections in the same collector electrode is used for isolating the collector electrode with the opposite polarity; wherein,
Along the second direction, the distance between the end part of each current collecting electrode section in the first electrode and the adjacent bus electrode included by the second electrode is a first distance; along the second direction, the distance between the end part of each current collecting electrode section in the second electrode and the adjacent bus electrode included by the first electrode is a second distance; the first distance is greater than the second distance;
a third distance is formed between the end of each current collecting electrode section in the first electrode and the edge of the second region along the second direction; along the second direction, the minimum distance between the edge of each bus electrode in the first electrode and the edge of the second area is a fourth distance; the third distance is greater than the fourth distance.
2. The back contact battery of claim 1, wherein a minimum distance between an edge of the first region and an edge of a bus electrode in the second direction is a fifth distance; a distance between the edge of the first region and the end of the current collecting electrode section in the second electrode is a sixth distance along the second direction; the ratio of the fifth distance to the sixth distance is greater than or equal to 0.8 and less than or equal to 1.2.
3. The back contact battery of claim 1, wherein in the second direction, an end of each collector electrode segment in the first electrode is spaced a third distance from an edge of the second region; the third distance is more than or equal to 0.15mm and less than or equal to 0.3mm;
and/or the number of the groups of groups,
along the second direction, the minimum distance between the edge of each bus electrode in the first electrode and the edge of the second area is a fourth distance; the fourth distance is greater than or equal to 0.07mm and less than 0.15mm;
and/or the number of the groups of groups,
a third distance is formed between the end of each current collecting electrode section in the first electrode and the edge of the second region along the second direction; along the second direction, the minimum distance between the edge of each bus electrode in the first electrode and the edge of the second area is a fourth distance; the ratio of the third distance to the fourth distance is greater than 1 and less than or equal to 2.
4. The back contact battery of claim 1, wherein each bus electrode comprised by the first electrode is not in direct contact with the first region;
and/or the number of the groups of groups,
each bus electrode included in the second electrode is not in direct contact with the second region.
5. The back contact battery of any of claims 1-4, wherein the doped semiconductor layer is of opposite conductivity type to the semiconductor substrate.
6. The back contact battery of claim 5, wherein the semiconductor substrate is a P-type semiconductor substrate and the doped semiconductor layer is an N-type doped semiconductor layer;
the cell base further includes a tunneling passivation layer between the P-type semiconductor substrate and the N-type doped semiconductor layer.
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