CN108538962A - A kind of preparation method of the IBC batteries of passivation contact - Google Patents
A kind of preparation method of the IBC batteries of passivation contact Download PDFInfo
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- CN108538962A CN108538962A CN201810426088.1A CN201810426088A CN108538962A CN 108538962 A CN108538962 A CN 108538962A CN 201810426088 A CN201810426088 A CN 201810426088A CN 108538962 A CN108538962 A CN 108538962A
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- 238000002161 passivation Methods 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 63
- 239000011159 matrix material Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 18
- 229920005591 polysilicon Polymers 0.000 claims abstract description 18
- 239000002002 slurry Substances 0.000 claims abstract description 18
- 238000007639 printing Methods 0.000 claims abstract description 15
- 238000009792 diffusion process Methods 0.000 claims abstract description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000000903 blocking effect Effects 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- -1 phosphonium ion Chemical class 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000243 solution Substances 0.000 claims description 14
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000009766 low-temperature sintering Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000006385 ozonation reaction Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 235000008216 herbs Nutrition 0.000 claims description 2
- 125000004437 phosphorous atom Chemical group 0.000 claims description 2
- 210000002268 wool Anatomy 0.000 claims description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims 1
- 210000000170 cell membrane Anatomy 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 8
- 238000000137 annealing Methods 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000608 laser ablation Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The present invention relates to a kind of preparation methods of the IBC batteries of passivation contact.Wherein, the doping treatment mode of N-type crystalline silicon matrix back surface is：Back surface oxide layer is grown in the back surface of N-type crystalline silicon matrix, intrinsically polysilicon layer is then grown in back surface oxide layer, and either then intrinsic amorphous silicon layer injects phosphonium ion in intrinsically polysilicon layer or intrinsic amorphous silicon layer；Then one layer of mask is grown; utilize the regions blocking slurry protection n+; stop that slurry forms the regions p+ and n+ intersected by printing; then after the mask for removing the regions p+; annealing disposably finally is carried out to the regions n+ with boron diffusion and the areas p+ are doped, overleaf forms alternate p+ and n+ doped regions in this way.Advantage is：Surface passivation effect is good, open-circuit voltage and high conversion efficiency；Reduce high-temperature process number, saves production cost；Reduce the silicon chip damage that laser ablation is brought, the more conducively realization of high conversion efficiency battery.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of preparation method of the IBC batteries of passivation contact.
Background technology
Solar cell is a kind of semiconductor devices converting light energy into electric energy, lower production cost and higher energy
Amount transformation efficiency is always the target that solar cell industry is pursued.For current conventional solar cell, p+ doped regions
Contact electrode and n+ doped regions contact electrode are located at the tow sides of cell piece.The front of battery is light-receiving surface, front
The covering of Metal contact electrode will cause the sunlight of a part of incidence to block reflection by metal electrode, cause a part of light
Learn loss.The area coverage of the front metal electrode of common crystal silicon solar batteries reduces the front of metal electrode 7% or so
Covering can directly improve the energy conversion efficiency of battery.
IBC (Interdigitated back contact) battery, is a kind of that p+ doped regions and n+ doped regions is equal
It is placed on the battery of cell backside (non-illuminated surface), the light-receiving surface of the battery is blocked without any metal electrode, to be effectively increased
The short circuit current of cell piece, makes the energy conversion efficiency of cell piece be improved.Since PN junction is located at the back side of battery, photoproduction
Mainly near front surface, carrier needs the place for reaching the back side across entire silicon wafer thickness that could be received for the generation of carrier
Collection, so the passivation quality of back surface is particularly important.Common structure is to be arranged alternately p+ and n+ mixes in the back surface of N-type matrix
Then passivation layer and metal electrode is arranged in miscellaneous region on it.Existing back contact battery, there are the passivation effects of back surface not
Good problem, and be passivated quality can influence the hidden open-circuit voltage of cell piece, dark saturation current density and short-wave band interior quantum effect
The performances such as rate.Most study at present, be most hopeful industrialization is exactly polysilicon passivation contact technique.
At present prepare polysilicon membrane method include mainly：(1) deposition intrinsic amorphous silicon layer first, then pass through spread it is real
Existing doped p-type or N-shaped polysilicon；(2) doping type amorphous silicon layer is deposited first, then carries out high annealing.No matter which kind of method,
The pyroprocess between one 700~900 DEG C is always undergone during preparing battery, before this pyroprocess can be to battery
The technique in face has a huge impact, and is the problem that passivation contact battery faces.If this passivation contact is applied to IBC
The back side, traditional two high annealings of needs can damage passivation effect；In addition the finger of traditional IBC cell backsides
Chi structure generally realizes that this mode be easy to cause serious damage from laser using laser ablation mode.So needing to design
A kind of method of the preparation efficient passivation contact battery of achievable mass production, to silicon wafer damage-free realizes IBC cell backsides p+
And the contact passivation in the regions n+, the high efficiency of battery not only may be implemented, but also conducive to realization mass production.
Invention content
In view of the above-mentioned deficiencies in the prior art, it is an object of the present invention to provide a kind of back junction solar electricity of part passivation contact
Pond, including the doping treatment mode of N-type crystalline silicon matrix back surface is：Back surface is grown in the back surface of N-type crystalline silicon matrix
Then oxide layer grows intrinsically polysilicon layer or intrinsic amorphous silicon layer, then in intrinsic polysilicon in back surface oxide layer
Phosphonium ion is injected in layer or intrinsic amorphous silicon layer；Then one layer of mask is grown, using the regions blocking slurry protection n+, passes through print
Brush blocking slurry forms the regions p+ and n+ intersected, after the mask for then removing the regions p+, is finally spread disposably to n+ with boron
Region carries out annealing and the areas p+ are doped, and overleaf forms alternate p+ and n+ doped regions in this way.
For achieving the above object, the technical solution that the present invention takes is：
A kind of preparation method of the IBC batteries of passivation contact, includes the following steps：
(1), the front surface to N-type crystalline silicon matrix and back surface are doped processing respectively, and N-type crystalline silicon matrix carries on the back table
The doping treatment mode in face is：Back surface oxide layer is grown in the back surface of N-type crystalline silicon matrix, then in back surface oxide layer
Either then intrinsic amorphous silicon layer injects phosphorus to upper growth intrinsically polysilicon layer in intrinsically polysilicon layer or intrinsic amorphous silicon layer
Ion；Then one layer of mask is grown, using the regions blocking slurry protection n+, stops that slurry forms the p+ and n+ that intersect by printing
Region；
(2), N-type crystalline silicon matrix is first got rid of with acid solution to the mask in the regions p+, then falls the areas n+ with etching alkaline solution
The etch stopper slurry in domain and the phosphorus atoms of the regions p+ injection；
(3) N-type crystalline silicon matrix is subjected to boron diffusion, forming n+ after the completion of diffusion adulterates front-surface field, the row of alternateing
The back surface n+ doped regions and back surface p+ doped regions of row；
(4) and then in the front surface of N-type crystalline silicon matrix passivated reflection reducing membrane is formed, in the back surface of N-type crystalline silicon matrix
Form passivating film；
(5), it is prepared and back surface n+ doped regions and back surface p+ doped regions Europe in the back surface of N-type crystalline silicon matrix
The metal electrode of nurse contact.
Wherein, in step (1), the thickness of back surface oxide layer is 1-3nm, and back surface oxide layer is SiO2, SiO2Growth
Method is high-temperature thermal oxidation method, nitric acid oxidation method, Ozonation or CVD deposition method.
Wherein, in step (1), the method for intrinsically polysilicon layer is grown in back surface oxide layer is：By N-type crystalline silicon base
Body is put into LPCVD equipment, grows intrinsically polysilicon layer in back surface oxide layer；
The method of intrinsic amorphous silicon layer is grown in back surface oxide layer is：N-type crystalline silicon matrix is put into APCVD equipment
Or in PECVD device, intrinsic amorphous silicon layer is grown in back surface oxide layer.
Wherein, in step (1), the implantation dosage of the phosphonium ion in intrinsically polysilicon layer or intrinsic amorphous silicon layer is 2 ×
1015cm-2~8 × 1015cm-2；
Wherein, in step (1), the preparation method of mask be N-type crystalline silicon matrix back surface it is heavy using PECVD device
The SiO that product a layer thickness is 50~200nmxDeielectric-coating.
Wherein, in step (1), using the regions blocking slurry protection n+, stop that slurry forms the p+ and n that intersect by printing
+ region, the slurry are that locally the regions n+ of printing overleaf, printing carry out low-temperature sintering, sintering temperature later by mode of printing
Degree is at 100~300 DEG C；
Wherein, in step (2), the HF solution that acid solution is 5%~10%, the KOH solution that aqueous slkali is 1%；
Wherein, in step (1), the doping treatment mode of N-type crystalline silicon matrix front surface is：Using ion implantation apparatus in N
The front surface of type crystal silicon substrate carries out ion implanting, and injection element is phosphorus, and implantation dosage is 1 × 1015cm-2~4 × 1015cm-2。
Wherein, in step (3), boron is spread by the way of diffusion furnace tube, and diffusion temperature is 900-1000 DEG C, the time 60
~180 minutes, boron source used Boron tribromide.
Wherein, in step (4), the preparation method of passivated reflection reducing membrane is to utilize PECVD in the front surface of N-type crystalline silicon matrix
Equipment first deposits the SiO that a layer thickness is 5~30nm2Deielectric-coating, then in SiO2On deielectric-coating redeposited a layer thickness be 40~
The SiN of 80nmxDeielectric-coating；
The preparation method of passivating film is to deposit a layer thickness in the back surface of N-type crystalline silicon matrix using PECVD device and be
The SiN of 30~50nmxDeielectric-coating.
Wherein, in step (5), the preparation method of metal electrode is brilliant by the N-type of the method for silk-screen printing after treatment
Silver-colored aluminium paste is printed on the back surface p+ doped regions of body silicon substrate, is printed silver paste on back surface n+ doped regions, is then carried out
Sintering processes.
Wherein, before carrying out step (1), making herbs into wool processing is made to the front surface of N-type crystalline silicon matrix；N-type crystalline silicon matrix
Resistivity be 0.5~15 Ω cm；The thickness of N-type crystalline silicon matrix is 50~300 μm；
Wherein, carry out that N-type crystalline silicon matrix being put into cleaning machine before step (4) cleaned, drying and processing.
The technological merit of the present invention is mainly reflected in：
The present invention is combined contact technique is passivated with back contact structure, is arranged in N-type crystalline silicon matrix back surface ultra-thin
Oxide layer has excellent contact effect in the case where not damaging passivating film and (is referred to as passivated contact technique (Passivated
Contact)), then alternately arranged p+ and n+ doped regions are set on it, compare existing back contact battery structure, this
Oxide layer can bring better surface passivation effect to N-type crystalline silicon matrix back surface in invention, while carrier can pass through
Oxide layer carries out free transmission, and made battery possesses higher open-circuit voltage and transfer efficiency；Back surface n+ doped regions and the back of the body
Surface p+doped region is collectively formed in a high-temperature process, greatly reduces high-temperature process number, has saved production cost；
The more traditional laser ablation method of the preparation method simultaneously reduces silicon chip damage, the more conducively realization of high conversion efficiency battery.It adopts
The IBC solar cells of the passivation contact prepared with the method for the present invention its hidden open circuit after the passivating film covering for completing front and rear surfaces
Voltage (Implied Voc) is up to 700mV or more, dark saturation current density J0<20fA/cm2, print electrode and back contacts electricity be made
Chi Hou, the internal quantum efficiency of short-wave band is up to 95% or more.
Description of the drawings
Fig. 1 is the battery structure section after the preparation method step 1 of the IBC batteries of the passivation contact of the embodiment of the present invention
Schematic diagram.
Fig. 2 is the battery structure section after the preparation method step 2 of the IBC batteries of the passivation contact of the embodiment of the present invention
Schematic diagram.
Fig. 3 is the battery structure section after the preparation method step 3 of the IBC batteries of the passivation contact of the embodiment of the present invention
Schematic diagram.
Fig. 4 is the battery structure section after the preparation method step 4 of the IBC batteries of the passivation contact of the embodiment of the present invention
Schematic diagram.
Fig. 5 is the battery structure section after the preparation method step 5 of the IBC batteries of the passivation contact of the embodiment of the present invention
Schematic diagram.
Fig. 6 is the battery structure section after the preparation method step 6 of the IBC batteries of the passivation contact of the embodiment of the present invention
Schematic diagram.
Fig. 7 is the battery structure section after the preparation method step 7 of the IBC batteries of the passivation contact of the embodiment of the present invention
Schematic diagram.
Fig. 8 is the battery structure section after the preparation method step 8 of the IBC batteries of the passivation contact of the embodiment of the present invention
Schematic diagram.
Fig. 9 is the battery structure section after the preparation method step 9 of the IBC batteries of the passivation contact of the embodiment of the present invention
Schematic diagram.
Figure 10 is the battery structure section after the preparation method step 10 of the IBC batteries of the passivation contact of the embodiment of the present invention
Schematic diagram.
Specific implementation mode
The present invention is described in detail below in conjunction with embodiment and attached drawing, it should be pointed out that described reality
It applies example and is intended merely to facilitate the understanding of the present invention, and do not play any restriction effect to it.
A kind of preparation method of the IBC batteries of passivation contact of the present embodiment, includes the following steps：
(1), the N-type crystalline silicon matrix 10 of 156mm*156mm is selected, and to the front surface system of N-type crystalline silicon matrix 10
Suede processing；The resistivity of N-type crystalline silicon matrix 10 is 0.5~15 Ω cm, preferably 1~5 Ω cm；N-type crystalline silicon matrix 10
Thickness be 50~300 μm, preferably 80~200 μm；It is as shown in Figure 1 to complete the battery structure after this step.
(2), in the back surface of N-type crystalline silicon matrix 10 growth back surface oxide layer 20, back surface oxide layer 20 is SiO2,
Growing method can be high-temperature thermal oxidation method, nitric acid oxidation method, Ozonation or CVD deposition method.Back surface oxide layer 20
Thickness is 1~3nm.It is as shown in Figure 2 to complete the battery structure after this step.
(3), by step (2), treated that N-type crystalline silicon matrix 10 is put into LPCVD equipment (low-pressure chemical vapor deposition)
In, intrinsically polysilicon layer 11 is grown in back surface oxide layer 20.The present embodiment can also use APCVD (atmospheric chemical vapors
Deposition) or PECVD (plasma reinforced chemical vapour deposition) equipment grow intrinsic amorphous silicon layer in back surface oxide layer 20.It is complete
Battery structure after cost step is as shown in Figure 3.
(4), using ion implantation apparatus the back surface of step (3) treated N-type crystalline silicon matrix 10 intrinsic polycrystalline
Ion implanting is carried out on silicon layer or intrinsic amorphous silicon layer, injection element is phosphorus, and implantation dosage is 2 × 1015cm-2~8 × 1015cm-2, preferably 3 × 1015cm-2~5 × 1015cm-2。
Then N-type crystalline silicon matrix 10 is put into PECVD device (plasma reinforced chemical vapour deposition), back surface is heavy
One layer of SiO of productxDeielectric-coating 15, thickness are 50~200nm.It is as shown in Figure 4 to complete the battery structure after this step.
(5), the back side of step (4) treated N-type crystalline silicon matrix 10 is used and protects the areas n+ using blocking slurry 16
Domain stops that slurry forms the regions p+ and n+ intersected by printing, which is the n by the printing of mode of printing part overleaf
+ region carries out low-temperature sintering after printing, and sintering temperature is at 100~300 DEG C.Complete such as Fig. 5 of the battery structure after this step institutes
Show.
(6), by step (5), treated that N-type crystalline silicon matrix 10 removes the regions p+ with 5%~10% HF solution
SiOx deielectric-coating 15, then the blocking slurry 16 in the regions n+ and the phosphorus original of the regions p+ injection are etched away simultaneously with 1% KOH solution
Son；The SiOx deielectric-coating 15 in the regions n+ retains, and forms the regions p+ and n+ intersected in this way.Complete the battery structure after this step such as
Shown in Fig. 6.
(7), ion implanting is carried out in step (6) treated 10 front surface of N-type crystalline silicon matrix using ion implantation apparatus,
Injection element is phosphorus, and implantation dosage is 1 × 1015cm-2~4 × 1015cm-2, preferably 1 × 1015cm-2~3 × 1015cm-2.It completes
Battery structure after this step is as shown in Figure 7.
(8), by step (7), treated that N-type crystalline silicon matrix 10 is put into diffusion furnace carries out the high temperature anneal, and boron expands
It dissipates by the way of diffusion furnace tube, diffusion temperature is 900-1000 DEG C, and the time is 60~180 minutes, and boron source uses Boron tribromide.
High temperature diffusion plays the role of annealing to the ion of injection simultaneously, forms n+ doping front-surface field 14, back surface n+ after the completion
Doped region 12 and back surface p+ doped regions 13.The sheet resistance that wherein n+ adulterates front-surface field 14 is 100~200 Ω/sqr.The back of the body
The sheet resistance of surface n+doped region 12 is 20~150 Ω/sqr, and junction depth is 0.3~2.0um；The side of back surface p+ doped regions 13
Resistance is 20~150 Ω/sqr, and junction depth is 0.3~2.0um.It is then placed in cleaning machine and is removed with 5~10% concentration HF solution
It is as shown in Figure 8 to complete the battery structure after this step for SiOx deielectric-coating 15.
(9), by step (8), treated that N-type crystalline silicon matrix 10 is put into cleaning machine is cleaned and dried.Then exist
The front surface of N-type crystalline silicon matrix 10 first deposits the SiO that a layer thickness is 5~30nm with the mode of PECVD2Deielectric-coating 21, so
Afterwards in SiO2Redeposited layer of sin on deielectric-coating 21xThe thickness of deielectric-coating 22, film is 40~80nm；In N-type crystalline silicon matrix 10
Back surface make layer of sin with the mode of PECVDxDeielectric-coating 23, SiNxThe thickness of deielectric-coating 23 is 30~50nm.Silicon substrate
The SiO of front surface2Deielectric-coating 21 and SiNxThe passivation for acting as silicon substrate body front surface of deielectric-coating 22 and the antireflective of light；Silicon substrate
The SiN of body back surfacexThe passivation for acting as silicon substrate back surface of deielectric-coating 23.Complete such as Fig. 9 of the battery structure after this step
It is shown.
(10), by the method for silk-screen printing step (8) treated N-type crystalline silicon matrix 10 back surface p+ doping
Silver-colored aluminium paste (forming p+ metal electrodes 31 after sintering) is printed on region 13, is printed silver paste on back surface n+ doped regions 12 and (is burnt
N+ metal electrodes 30 are formed after knot).N-type crystalline silicon matrix 10 is transmitted to be sintered into belt sintering stove to be formed after printing
Ohmic contact.P+ metal electrodes 31 are aerdentalloy electrode, and n+ metal electrodes 30 are silver electrode.Complete the battery knot after this step
Structure is as shown in Figure 10.So far the making of back contact solar cell of the present invention is completed.
The present embodiment is combined contact technique is passivated with back contact structure, and oxygen is arranged in N-type crystalline silicon matrix back surface
Change layer, alternately arranged p+ and n+ doped regions are set on it, compares existing back contact battery structure, the oxygen in the present invention
Better surface passivation effect can be brought to N-type crystalline silicon matrix back surface by changing layer, at the same carrier can pass through oxide layer into
Row freely transmits, and made battery possesses higher open-circuit voltage and transfer efficiency.
The present invention's is passivated the IBC batteries contacted after completing the passivating film covering of front and rear surfaces, after tested its hidden open circuit
Voltage (Implied Voc) is up to 700mV or more, dark saturation current density J0<20fA/cm2, print electrode and back contacts electricity be made
Chi Hou, the internal quantum efficiency of short-wave band is up to 95% or more.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than the present invention is protected
The limitation of range is protected, although being explained in detail to the present invention with reference to preferred embodiment, those skilled in the art answer
Work as understanding, technical scheme of the present invention can be modified or replaced equivalently, without departing from the reality of technical solution of the present invention
Matter and range.
Claims (12)
1. a kind of preparation method of the IBC batteries of passivation contact, it is characterised in that：Include the following steps：
(1) front surface to N-type crystalline silicon matrix and back surface are doped processing respectively, N-type crystalline silicon matrix back surface
Doping treatment mode is：Back surface oxide layer is grown in the back surface of N-type crystalline silicon matrix, it is then raw in back surface oxide layer
Long intrinsically polysilicon layer either intrinsic amorphous silicon layer then in intrinsically polysilicon layer or intrinsic amorphous silicon layer inject phosphorus from
Son；Then one layer of mask is grown, using the regions blocking slurry protection n+, stops that slurry forms the areas p+ and n+ intersected by printing
Domain；
(2) N-type crystalline silicon matrix is first got rid of with acid solution to the mask in the regions p+, then falls the quarter in the regions n+ with etching alkaline solution
The phosphorus atoms of erosion blocking slurry and the regions p+ ion implanting；
(3) N-type crystalline silicon matrix is subjected to boron diffusion, forms n+ doping front-surface field after the completion of diffusion, is arranged alternately with each other
Back surface n+ doped regions and back surface p+ doped regions；
(4) and then in the front surface of N-type crystalline silicon matrix passivated reflection reducing membrane is formed, is formed in the back surface of N-type crystalline silicon matrix
Passivating film；
(5) it prepares in the back surface of N-type crystalline silicon matrix and is connect with back surface n+ doped regions and back surface p+ doped region ohms
Tactile metal electrode.
2. a kind of preparation method of the IBC batteries of passivation contact according to claim 1, it is characterised in that：Step (1)
In, the thickness of back surface oxide layer is 1~3nm, and back surface oxide layer is SiO2, SiO2Growing method be high-temperature thermal oxidation method,
Nitric acid oxidation method, Ozonation or CVD deposition method.
3. a kind of preparation method of the IBC batteries of passivation contact according to claim 1, it is characterised in that：Step (1)
In, the method for intrinsically polysilicon layer is grown in back surface oxide layer is：N-type crystalline silicon matrix is put into LPCVD equipment,
Intrinsically polysilicon layer is grown in back surface oxide layer；
The method of intrinsic amorphous silicon layer is grown in back surface oxide layer is：By N-type crystalline silicon matrix be put into APCVD equipment or
In PECVD device, intrinsic amorphous silicon layer is grown in back surface oxide layer.
4. a kind of preparation method of the IBC batteries of passivation contact according to claim 1, it is characterised in that：Step (1)
In, the implantation dosage of the phosphonium ion in intrinsically polysilicon layer or intrinsic amorphous silicon layer is 2 × 1015cm-2~8 × 1015cm-2。
5. a kind of preparation method of the IBC batteries of passivation contact according to claim 1, it is characterised in that：Step (1)
In, the preparation method of mask be N-type crystalline silicon matrix back surface using PECVD device deposit a layer thickness be 50~
The SiO of 200nmxDeielectric-coating.
6. a kind of preparation method of the IBC batteries of passivation contact according to claim 1, it is characterised in that：Step (1)
In, using the regions blocking slurry protection n+, stop that slurry forms the regions p+ and n+ intersected by printing, which is to pass through print
Locally the regions n+ of printing overleaf, printing carry out low-temperature sintering to brush mode later, and sintering temperature is at 100~300 DEG C.
7. a kind of preparation method of the IBC batteries of passivation contact according to claim 1, it is characterised in that：Step (2)
In, the HF solution that acid solution is 5%~10%, the KOH solution that aqueous slkali is 1%.
8. a kind of preparation method of the IBC batteries of passivation contact according to claim 1, it is characterised in that：Step (1)
In, the doping treatment mode of N-type crystalline silicon matrix front surface is：Using ion implantation apparatus N-type crystalline silicon matrix front surface
Ion implanting is carried out, injection element is phosphorus, and implantation dosage is 1 × 1015cm-2~4 × 1015cm-2。
9. according to a kind of preparation method of the IBC batteries of any passivation contact of claim 1~8, it is characterised in that：Step
Suddenly in (3), boron is spread by the way of diffusion furnace tube, and diffusion temperature is 900~1000 DEG C, and the time is 60~180 minutes, boron source
Using Boron tribromide.
10. according to a kind of preparation method of the IBC batteries of any passivation contact of claim 1~8, it is characterised in that：
In step (4), the preparation method of passivated reflection reducing membrane is first to deposit one using PECVD device in the front surface of N-type crystalline silicon matrix
Layer thickness is the SiO of 5~30nm2Deielectric-coating, then in SiO2The SiN that redeposited a layer thickness is 40~80nm on deielectric-coatingxIt is situated between
Plasma membrane；
The preparation method of passivating film be N-type crystalline silicon matrix back surface using PECVD device deposit a layer thickness be 30~
The SiN of 50nmxDeielectric-coating.
11. according to a kind of preparation method of the IBC batteries of any passivation contact of claim 1~10, it is characterised in that：
In step (5), the preparation method of metal electrode is the back of the body table of the N-type crystalline silicon matrix by the method for silk-screen printing after treatment
Silver-colored aluminium paste is printed on the p+ doped regions of face, is printed silver paste on back surface n+ doped regions, is then sintered.
12. according to a kind of preparation method of the IBC batteries of any passivation contact of claim 1~8, it is characterised in that：
Before carrying out step (1), making herbs into wool processing is made to the front surface of N-type crystalline silicon matrix；The resistivity of N-type crystalline silicon matrix is 0.5
~15 Ω cm；The thickness of N-type crystalline silicon matrix is 50~300 μm；
N-type crystalline silicon matrix is put into cleaning machine before step (4) cleaned, drying and processing.
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