CN106299024A - The preparation method of a kind of back contact solar cell and battery thereof and assembly, system - Google Patents
The preparation method of a kind of back contact solar cell and battery thereof and assembly, system Download PDFInfo
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- CN106299024A CN106299024A CN201610741342.8A CN201610741342A CN106299024A CN 106299024 A CN106299024 A CN 106299024A CN 201610741342 A CN201610741342 A CN 201610741342A CN 106299024 A CN106299024 A CN 106299024A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 61
- 239000011159 matrix material Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000011248 coating agent Substances 0.000 claims abstract description 29
- 238000000576 coating method Methods 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 20
- 239000011574 phosphorus Substances 0.000 claims abstract description 20
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052796 boron Inorganic materials 0.000 claims abstract description 13
- 239000012528 membrane Substances 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 235000008216 herbs Nutrition 0.000 claims abstract description 3
- 210000002268 wool Anatomy 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 12
- 238000002513 implantation Methods 0.000 claims description 11
- 229910017107 AlOx Inorganic materials 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 238000004513 sizing Methods 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 2
- 229920002472 Starch Polymers 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 235000019698 starch Nutrition 0.000 claims 1
- 239000008107 starch Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229910004205 SiNX Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000628997 Flos Species 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to the preparation method of a kind of back contact solar cell and battery thereof and assembly, system.The preparation method of the back contact solar cell of the present invention, be included in the front surface making herbs into wool of N-type crystalline silicon matrix, back surface boron inject, back surface selectivity phosphorus inject, front surface phosphorus inject, anneal, clean and prepare the steps such as passivated reflection reducing membrane, type metal electrode and sintering.It provides the benefit that: without using complicated deielectric-coating mask growth and hole opening technology just can form alternately arranged p+ doped region and n+ doped region, greatly simplifie technological process；N+ front-surface field, back surface n+ doped region and back surface p+ doped region are collectively forming in a high-temperature process, greatly reduce high-temperature process number, have saved production cost；The method using ion implanting and annealing completes doping, and for relative diffusion, its sheet resistance uniformity is more preferable, and process is easier to control.
Description
Technical field
The present invention relates to technical field of solar batteries, be specifically related to a kind of back contact solar cell preparation method and
Its battery and assembly, system.
Background technology
Solaode is a kind of semiconductor device converting light energy into electric energy, relatively low production cost and higher energy
Amount transformation efficiency is always the target that solar cell industry is pursued.For the most conventional solaode, its p+ doped region
Contact electrode contacts electrode with n+ doped region and lays respectively at the tow sides of cell piece.The front of battery is sensitive surface, front
The sunlight that the covering of Metal contact electrode will cause a part incident is blocked reflection by metal electrode, causes a part of light
Learn loss.The area coverage of the front metal electrode of common crystal silicon solar batteries, about 7%, reduces the front of metal electrode
Covering can directly improve the energy conversion efficiency of battery.
Back contact battery, is that p+ doped region and n+ doped region are both placed in cell backside (non-illuminated surface) by one
Battery, the sensitive surface of this battery blocks without any metal electrode, thus effectively increases the short circuit current of cell piece, makes cell piece
Energy conversion efficiency be improved.
The solaode of back contact structure is energy in the crystal silicon solar batteries that current solar industryization is produced in batches
A kind of battery that amount transformation efficiency is the highest, its high transformation efficiency, low component package cost, deeply favored by people always.But,
Back contact battery processing technology is more complicated, wherein comprises multiple tracks and makes the technique of mask, the alignment essence that this technological requirement is the highest
Degree, in conventional manufacture method, mostly uses the photoetching technique used in semiconductor integrated circuit to make back contacts electricity
The mask in pond, but the cost of photoetching technique is much more expensive, is difficult to apply to large-scale back contact battery for now raw
Produce.The most also have the pyroprocess of multistep, not only increase the complexity of technique, also can improve the production cost of silicon chip.Cause
This, use low cost, the simple method of technique to make efficient back contact battery, be the most all a huge challenge.
Summary of the invention
It is an object of the invention to provide preparation method and battery and the assembly of a kind of back contact solar cell, be
System.The preparation technology flow process of the present invention is relatively simple and cost is relatively low, safely controllable, it is simple to carry out Industry Promotion.
For achieving the above object, the technical scheme that the present invention takes is:
The preparation method of a kind of back contact solar cell, comprises the following steps:
(1), select N-type crystalline silicon matrix, and the front surface of N-type crystalline silicon matrix is made making herbs into wool process；
(2) back surface of N-type crystalline silicon matrix, after treatment carries out ion implanting, injects element and includes boron；
(3) back surface of N-type crystalline silicon matrix, after treatment is selectively ion-implanted, and injects element and includes
Phosphorus, the implantation dosage of phosphorus is more than the implantation dosage of boron；
(4), carry out ion implanting at the front surface of N-type crystalline silicon matrix, inject element and include phosphorus；
(5), will process after N-type crystalline silicon matrix carry out the high temperature anneal, the peak temperature of annealing is 800～1100
DEG C, annealing time is 30～200min；After having annealed, the front surface at N-type crystalline silicon matrix forms lightly doped n+ front surface
, the back surface at N-type crystalline silicon matrix forms back surface n+ doped region and back surface p+ doped region；
(6) the N-type crystalline silicon matrix after, step (5) being processed is carried out process, removal front surface and the oxygen of back surface
Changing layer, then the front surface at N-type crystalline silicon matrix forms passivated reflection reducing membrane, and the back surface at N-type crystalline silicon matrix is formed blunt
Change film；
(7), on the back surface p+ doped region of N-type crystalline silicon matrix, p+ metal electrode is printed by screen printing technique
Slurry, prints n+ metal electrode sizing on back surface n+ doped region, and is sintered.
Wherein, in step (2), the implantation dosage of boron is 0.5 × 1015cm-2～3 × 1015cm-2。
Wherein, in step (3), the implantation dosage of phosphorus is 3 × 1015cm-2～8 × 1015cm-2；During ion implanting phosphorus, in N-type
Arranging mask between back surface and the ion beam of crystalline silicon matrix, mask is provided with aperture pattern, the material of mask is graphite,
Aperture pattern on mask is linear patterns of openings or punctual openings pattern, linear patterns of openings wide 50～400 μm, point
A diameter of 500～1500 μm of shape patterns of openings.
Wherein, in step (4), the ion implantation dosage of phosphorus is 1 × 1015cm-2～4 × 1015cm-2。
Wherein, in step (5), the preparation method of passivated reflection reducing membrane is to utilize PECVD at the front surface of N-type crystalline silicon matrix
Technology first deposits the SiO that a layer thickness is 5～30nmxDeielectric-coating, then at SiOxOn deielectric-coating redeposited a layer thickness be 40～
The SiN of 80mxDeielectric-coating；
The preparation method of passivating film is to utilize PECVD technique or ALD technique first to deposit at the back surface of N-type crystalline silicon matrix
A layer thickness is the AlO of 4～20nmxDeielectric-coating, then at AlOxSurface redeposition a layer thickness of deielectric-coating is 20～50nm
SiNxFilm.
Present invention also offers a kind of back contact solar cell, including N-type crystalline silicon matrix, N-type crystalline silicon matrix
Front surface is followed successively by lightly doped n+ front-surface field and passivated reflection reducing membrane from inside to outside；The back surface of N-type crystalline silicon matrix is from interior
Be followed successively by doped region, passivating film and metal electrode to outward, doped region includes that back surface n+ doped region and back surface p+ mix
Miscellaneous region, back surface n+ doped region is provided with n+ metal electrode, back surface p+ doped region is provided with p+ metal electrode.
Wherein, the sheet resistance of n+ front-surface field is 50～200 Ω/sqr, and junction depth is 0.2～2.0 μm；Back surface n+ doped region
The sheet resistance in territory is 20～150 Ω/sqr, and junction depth is 0.3～2.0 μm；The sheet resistance of back surface p+ doped region be 20～150 Ω/
Sqr, junction depth is 0.3～2.0 μm.
Wherein, the resistivity of N-type crystalline silicon matrix is 0.5～15 Ω cm, the thickness of N-type crystalline silicon matrix be 50～
300μm；P+ metal electrode is aerdentalloy electrode, and n+ metal electrode is silver electrode.
Present invention also offers a kind of solar module, including the front layer material from top to bottom set gradually, encapsulation
Material, solaode, encapsulating material, backsheet, solaode is above-mentioned a kind of back contact solar cell.
Present invention also offers a kind of solar cell system, including more than one solar module, solar energy
Battery component is above-mentioned solar module.
The technological merit of the present invention is mainly reflected in:
1, without using complicated deielectric-coating mask growth and hole opening technology just can form alternately arranged p+ and n+ doping
Region, greatly simplifies technological process；
2, n+ front-surface field, back surface n+ doped region and back surface p+ doped region common shape in a high-temperature process
Become, greatly reduce high-temperature process number, saved production cost；
3, using the method for ion implanting and annealing to complete doping, for relative diffusion, its sheet resistance uniformity is more preferable, process
It is easier to control.
As can be seen here, the preparation method technological process of the present invention is relatively simple, and cost is relatively low, safely controllable, it is simple to enter
Row Industry Promotion.
Accompanying drawing explanation
Fig. 1 is that the battery structure cross section after the preparation method step one of the back contact solar cell of the embodiment of the present invention shows
It is intended to.
Fig. 2 is that the battery structure cross section after the preparation method step 2 of the back contact solar cell of the embodiment of the present invention shows
It is intended to.
Fig. 3 is that the battery structure cross section after the preparation method step 3 of the back contact solar cell of the embodiment of the present invention shows
It is intended to.
Fig. 4 is that the battery structure cross section after the preparation method step 4 of the back contact solar cell of the embodiment of the present invention shows
It is intended to.
Fig. 5 is that the battery structure cross section after the preparation method step 5 of the back contact solar cell of the embodiment of the present invention shows
It is intended to.
Fig. 6 is that the battery structure cross section after the preparation method step 6 of the back contact solar cell of the embodiment of the present invention shows
It is intended to.
Fig. 7 is that the battery structure cross section after the preparation method step 7 of the back contact solar cell of the embodiment of the present invention shows
It is intended to.
Fig. 8 is that the strip perforate used in the preparation method step 3 of the back contact solar cell of the embodiment of the present invention is covered
Membrane structure schematic diagram.
Fig. 9 is that the point-like perforate used in the preparation method step 3 of the back contact solar cell of the embodiment of the present invention is covered
Membrane structure schematic diagram.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the present invention is described in detail, it should be pointed out that described reality
Execute example and be intended merely to facilitate the understanding of the present invention, and it is not played any restriction effect.
See shown in Fig. 1 to Fig. 9, the preparation method of a kind of back contact solar cell that the present embodiment provides, including with
Lower step:
(1), the N-type crystalline silicon matrix 10 of 156mm × 156mm, and the front surface system to N-type crystalline silicon matrix 10 are selected
Floss processes；The resistivity of N-type crystalline silicon matrix 10 is 0.5～15 Ω cm, preferably 1～5 Ω cm；N-type crystalline silicon matrix 10
Thickness be 50～300 μm, preferably 80～200 μm；Complete the battery structure after this step as shown in Figure 1.
(2), ion implantation apparatus N-type crystalline silicon matrix 10 back surface after step (1) processes is used to carry out ion implanting,
Injection element is boron, and implantation dosage is 0.5 × 1015cm-2～3 × 1015cm-2, preferably 1.5 × 1015cm-2～2.5 × 1015cm-2.Complete the battery structure after this step as shown in Figure 2.
(3) ion implantation apparatus N-type crystalline silicon matrix 10 back surface after step (2) processes, is used to carry out optionally
Ion implanting, injection element is phosphorus, and implantation dosage is 3 × 1015cm-2～8 × 1015cm-2, preferably 4 × 1015cm-2～6 ×
1015cm-2.During ion implanting, mask 40 is set between N-type crystalline silicon matrix 10 back surface and ion beam.The material of mask 40
For graphite, as shown in Figure 8, mask 40 can arrange linear opening 41, linear opening 41 wide 50～400 μm, preferably 100
～300 μm.As it is shown in figure 9, punctual openings 42 can also be arranged on mask 40, the spot diameter of punctual openings 42 pattern be 500～
1500 μm, preferably 100～300 μm.Aperture pattern on mask 40 can also be other cycle arbitrarily arranged or battle arrays paracycle
Row, its pattern can have multiple choices as required, be not construed as limiting herein, only carries out citing and enumerates.Open region on mask 40
N-type crystalline silicon matrix 10 back surface corresponding to territory is injected with boron and phosphorus, and other regions are then only boron and inject.Control the agent that phosphorus injects
The dosage that amount is injected more than boron.Complete the battery structure after this step as shown in Figure 3.
(4), ion implantation apparatus N-type crystalline silicon matrix 10 front surface after step (3) processes is used to carry out ion implanting,
Injection element is phosphorus, and implantation dosage is 1 × 1015cm-2～4 × 1015cm-2, preferably 1 × 1015cm-2～3 × 1015cm-2.Complete
Battery structure after this step is as shown in Figure 4.
(5), by the N-type crystalline silicon matrix 10 after step (4) process put into and annealing furnace carries out the high temperature anneal, annealing
Peak temperature be 800～1100 DEG C, preferably 850～1000 DEG C, annealing time is 30～200min, preferably 60～
200min, environment source of the gas is preferably N2And O2.N+ front-surface field 13, back surface n+ doped region 12 and is i.e. formed after having annealed
Back surface p+ doped region 11.The N-type crystalline silicon matrix 10 back surface region that wherein opening on mask 40 is corresponding is back surface n
+ doped region 12, this is because the dosage of the phosphorus of this region injection is more than the dosage of boron, boron solid solubility in silicon is low simultaneously
In phosphorus, so this region is n+ doping after Tui Huo.Other regions of back surface are back surface p+ doped region 11.Wherein n+ front surface
Field 13 is for being lightly doped, and its sheet resistance is 50～200 Ω/sqr, and junction depth is 0.2～2.0 μm.The sheet resistance of back surface n+ doped region 12
Being 20～150 Ω/sqr, junction depth is 0.3～2.0 μm.The sheet resistance of back surface p+ doped region 11 is 20～150 Ω/sqr, junction depth
It is 0.3～2.0 μm.Complete the battery structure after this step as shown in Figure 5.
(6), step (5) is processed after N-type crystalline silicon matrix 10 put in cleaning machine, remove front surface and back surface
Oxide layer is also dried.Then at the front surface of N-type crystalline silicon matrix 10 with PECVD (plasma reinforced chemical vapour deposition)
Mode first deposit the SiO that a layer thickness is 5～30nmxDeielectric-coating 20, then at SiOxRedeposited layer of sin on deielectric-coating 20x
Deielectric-coating 22, the thickness of film is 40～80nm；Back surface PECVD or ALD (ald) at N-type crystalline silicon matrix 10
Mode make one layer of AlOxDeielectric-coating 21, the thickness of film is 4～20nm, then at AlOxThe surface redeposition one of deielectric-coating 21
Layer SiNxFilm 23, SiNxThe thickness of film 23 is 20～50nm.The SiO of silicon substrate front surfacexDeielectric-coating 20 and SiNxDeielectric-coating 22
It act as the passivation of silicon substrate front surface and the antireflective of light；The AlO of silicon substrate back surfacexDeielectric-coating 21 and SiNxDeielectric-coating 23
The passivation acting as silicon substrate back surface, SiN simultaneouslyxDeielectric-coating 23 also plays AlOxThe protective effect of deielectric-coating 21.Complete
Battery structure after cost step is as shown in Figure 6.
(7), by the method for silk screen printing step (6) process after N-type crystalline silicon matrix 10 back surface p+ adulterate
Aerdentalloy slurry is printed, printing silver slurry on back surface n+ doped region 12 on region 11.Print N-type crystalline silicon after terminating
Matrix 10 transmits and is sintered forming Ohmic contact into belt sintering stove, and after sintering, aerdentalloy slurry is formed and mixes with back surface p+
The p+ metal electrode 30 of miscellaneous region 11 Ohmic contact, with the n+ metal electrode 31 of back surface n+ doped region 12 Ohmic contact.Complete
Battery structure after cost step is as shown in Figure 7.The most i.e. complete the making of back contact solar cell of the present invention.
It is pointed out that the step of above-described embodiment does not has dividing of strict order, those skilled in the art are readding
The adjustment of sequence of steps can be carried out after running through the present embodiment and the enforcement of non-influence technique scheme, the order of method step is adjusted
Whole also within the claims of the present invention.
The preparation method of the back contact solar cell of the present embodiment is without using complicated deielectric-coating mask growth and opening
Hole technique just can form alternately arranged p+ and n+ doped region, greatly simplifies technological process；N+ front-surface field, back surface
N+ doped region and back surface p+ doped region are collectively forming in a high-temperature process, greatly reduce high-temperature process number,
Save production cost；The method using ion implanting and annealing completes doping, and for relative diffusion, its sheet resistance uniformity is more preferable,
Process is easier to control.
Shown in Figure 7, a kind of back contact solar cell of the present embodiment, including N-type crystalline silicon matrix 10, N-type is brilliant
The front surface of body silicon substrate 10 is followed successively by lightly doped n+ front-surface field 13 and passivated reflection reducing membrane from inside to outside；N-type crystalline silicon base
The back surface of body 10 is followed successively by doped region, passivating film and metal electrode from inside to outside, and doped region includes that back surface n+ adulterates
Region 12 and back surface p+ doped region 11, back surface n+ doped region 12 is provided with n+ metal electrode 31, and back surface p+ adulterates
P+ metal electrode 30 it is provided with on region 11.The pattern of back surface n+ doped region 12 is linear patterns of openings or point-like is opened
Mouth pattern, linear patterns of openings wide 50～400 μm, a diameter of 500～1500 μm of punctual openings pattern.
Preferably, the sheet resistance of n+ front-surface field 13 is 50～200 Ω/sqr, and junction depth is 0.2～2.0 μm；Back surface n+ mixes
The sheet resistance in miscellaneous region 12 is 20～150 Ω/sqr, and junction depth is 0.3～2.0 μm；The sheet resistance of back surface p+ doped region 11 be 20～
150 Ω/sqr, junction depth is 0.3～2.0 μm.The resistivity of N-type crystalline silicon matrix 10 is 0.5～15 Ω cm, N-type crystalline silicon base
The thickness of body 10 is 50～300 μm；P+ metal electrode 30 is aerdentalloy electrode, and n+ metal electrode 31 is silver electrode.Passivation subtracts
Anti-film is SiOxDeielectric-coating 20 and SiNxDeielectric-coating 22, passivating film is AlOxDeielectric-coating 21 and SiNxDeielectric-coating 23, passivated reflection reducing membrane
Thickness be 45～110nm, the thickness of passivating film is 24～70nm.
The back contact solar cell of said structure is after the passivating film completing front and rear surfaces covers, and after tested, it is hidden opens
Road voltage (Implied Voc) up to more than 690mV, dark saturation current density J0 ＜ 30fA/cm2, print electrode the back of the body made
After contact battery, the internal quantum efficiency of its short-wave band reaches more than 95%.Function admirable.
The present embodiment additionally provides a kind of solar module, including the front layer material from top to bottom set gradually, envelope
Package material, solaode, encapsulating material, backsheet, solaode is above-mentioned a kind of back contact solar cell.
The present embodiment additionally provides a kind of solar cell system, including more than one solar module, the sun
Can battery component be above-mentioned solar module.
Last it should be noted that, above example is only in order to illustrate technical scheme, rather than the present invention is protected
Protecting the restriction of scope, although having made to explain to the present invention with reference to preferred embodiment, those of ordinary skill in the art should
Work as understanding, technical scheme can be modified or equivalent, without deviating from the reality of technical solution of the present invention
Matter and scope.
Claims (10)
1. the preparation method of a back contact solar cell, it is characterised in that: comprise the following steps:
(1), select N-type crystalline silicon matrix, and the front surface of N-type crystalline silicon matrix is made making herbs into wool process；
(2) back surface of N-type crystalline silicon matrix, after treatment carries out ion implanting, injects element and includes boron；
(3) back surface of N-type crystalline silicon matrix, after treatment is selectively ion-implanted, and injects element and includes phosphorus, phosphorus
Implantation dosage more than the implantation dosage of boron；
(4), carry out ion implanting at the front surface of N-type crystalline silicon matrix, inject element and include phosphorus；
(5), will process after N-type crystalline silicon matrix carry out the high temperature anneal, the peak temperature of annealing is 800～1100 DEG C,
Annealing time is 30～200min；After having annealed, the front surface at N-type crystalline silicon matrix forms lightly doped n+ front-surface field,
Back surface at N-type crystalline silicon matrix forms back surface n+ doped region and back surface p+ doped region；
(6) the N-type crystalline silicon matrix after, step (5) being processed is carried out process, removal front surface and the oxidation of back surface
Layer, then the front surface at N-type crystalline silicon matrix forms passivated reflection reducing membrane, and the back surface at N-type crystalline silicon matrix forms passivation
Film；
(7), on the back surface p+ doped region of N-type crystalline silicon matrix, print p+ metal electrode by screen printing technique to starch
Material, prints n+ metal electrode sizing on back surface n+ doped region, and is sintered.
The preparation method of a kind of back contact solar cell the most according to claim 1, it is characterised in that: in step (2),
The implantation dosage of boron is 0.5 × 1015cm-2～3 × 1015cm-2。
The preparation method of a kind of back contact solar cell the most according to claim 1, it is characterised in that: in step (3),
The implantation dosage of phosphorus is 3 × 1015cm-2～8 × 1015cm-2；During ion implanting phosphorus, N-type crystalline silicon matrix back surface and from
Arranging mask between son bundle, mask is provided with aperture pattern, the aperture pattern on mask is linear patterns of openings or point
Shape patterns of openings, linear patterns of openings a width of 50～400 μm, a diameter of 500～1500 μm of punctual openings pattern.
The preparation method of a kind of back contact solar cell the most according to claim 1, it is characterised in that: in step (4),
The ion implantation dosage of phosphorus is 1 × 1015cm-2～4 × 1015cm-2。
The preparation method of a kind of back contact solar cell the most according to claim 1, it is characterised in that: in step (5),
The preparation method of passivated reflection reducing membrane be the front surface of N-type crystalline silicon matrix utilize PECVD technique first deposit a layer thickness be 5～
The SiO of 30nmxDeielectric-coating, then at SiOxOn deielectric-coating, redeposited a layer thickness is the SiN of 40～80nmxDeielectric-coating；
The preparation method of passivating film is to utilize PECVD technique or ALD technique first to deposit one layer at the back surface of N-type crystalline silicon matrix
Thickness is the AlO of 4～20nmxDeielectric-coating, then at AlOxThe SiN that redeposition a layer thickness in surface is 20～50nm of deielectric-coatingx
Deielectric-coating.
6. a back contact solar cell, including N-type crystalline silicon matrix, it is characterised in that: before described N-type crystalline silicon matrix
Surface is followed successively by lightly doped n+ front-surface field and passivated reflection reducing membrane from inside to outside；The back surface of described N-type crystalline silicon matrix from
In be followed successively by doped region, passivating film and metal electrode to outward, described doped region includes back surface n+ doped region and back of the body table
Face p+ doped region, described back surface n+ doped region is provided with n+ metal electrode, and described back surface p+ doped region is provided with p
+ metal electrode.
A kind of back contact solar cell the most according to claim 6, it is characterised in that: the sheet resistance of n+ front-surface field is 50
～200 Ω/sqr, junction depth is 0.2～2.0 μm；The sheet resistance of back surface n+ doped region is 20～150 Ω/sqr, and junction depth is 0.3
～2.0 μm；The sheet resistance of back surface p+ doped region is 20～150 Ω/sqr, and junction depth is 0.3～2.0 μm.
A kind of back contact solar cell the most according to claim 6, it is characterised in that: the resistance of N-type crystalline silicon matrix
Rate is 0.5～15 Ω cm, and the thickness of N-type crystalline silicon matrix is 50～300 μm；Described p+ metal electrode is aerdentalloy electricity
Pole, described n+ metal electrode is silver electrode.
9. a solar module, including the front layer material from top to bottom set gradually, encapsulating material, solaode,
Encapsulating material, backsheet, it is characterised in that: described solaode is the arbitrary described a kind of back contacts of claim 6-8
Solaode.
10. a solar cell system, including more than one solar module, it is characterised in that: described solar energy
Battery component is the solar module described in claim 9.
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| CN114093980A (en) * | 2021-09-30 | 2022-02-25 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | Manufacturing method of interdigital back contact cell |
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