CN106252449B - Local doping front-surface field back contact battery and preparation method thereof and component, system - Google Patents
Local doping front-surface field back contact battery and preparation method thereof and component, system Download PDFInfo
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- CN106252449B CN106252449B CN201610740237.2A CN201610740237A CN106252449B CN 106252449 B CN106252449 B CN 106252449B CN 201610740237 A CN201610740237 A CN 201610740237A CN 106252449 B CN106252449 B CN 106252449B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The present invention relates to a kind of local doping front-surface field back contact battery and preparation method thereof and component, system.The local doping front-surface field back contact battery of the present invention, including N-type crystalline silicon matrix, the preceding surface of N-type crystalline silicon matrix is followed successively by local doping n+ front-surface fields and preceding surface passivation antireflective film from inside to outside, and the back surface of N-type crystalline silicon matrix is followed successively by the back surface p+ doped regions being alternately arranged and back surface n+ doped regions, back surface passivation film and back surface metal electrode from inside to outside.Its advantage is：Only n+ doping is carried out in the preceding surface regional area of N-type crystalline silicon matrix, remaining region undopes, so as to which the front-surface field of local doping is made, this structure had not only reduced the compound of front-surface field itself but also excellent field passivation effect can be provided to N-type crystalline silicon matrix, and made battery has higher open-circuit voltage, short circuit current flow and conversion efficiency.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of local doping front-surface field back contact battery and
Its preparation method and component, system.
Background technology
Solar cell is a kind of semiconductor devices for converting light energy into electric energy, relatively low production cost and higher energy
Amount transformation efficiency is always the target that solar cell industry is pursued.For current conventional solar cell, its p+ doped region
Contact electrode and n+ doped regions contact electrode is located at the tow sides of cell piece respectively.The front of battery is smooth surface, front
The covering of Metal contact electrode will cause the sunshine of a part of incidence to block reflection by metal electrode, cause a part of light
Learn loss.The area coverage of the front metal electrode of common crystal silicon solar batteries reduces the front of metal electrode 7% or so
Covering can directly improve the energy conversion efficiency of battery.
Back contact battery, is that p+ doped regions and n+ doped regions are both placed in cell backside (non-illuminated surface) by one kind
Battery, the smooth surface of the battery is blocked without any metal electrode, so as to effectively increase the short circuit current flow of cell piece, makes cell piece
Energy conversion efficiency be improved.Because PN junction is located at the back side of battery, the generation of photo-generated carrier is main attached on preceding surface
Closely, carrier needs just be collected through the place that whole silicon wafer thickness reaches the back side.If preceding surface passivation is bad, photoproduction
Carrier can be easy to just be combined before the back side is reached and reduce efficiency.Therefore, good preceding surface passivation seems particularly
It is important.
The means of surface passivation are to introduce n+/n height knot on preceding surface before common back contact battery, are referred to as
Front-surface field.Front-surface field can provide good field passivation effect to N-type silicon substrate, and reduction photo-generated carrier is on preceding surface
Recombination rate.Front-surface field is generally by the method formation of phosphorus diffusion or ion implanting.The doping concentration of phosphorus is higher, preceding
Compound bigger, the dark saturation current density J after passivation of surface field itself0Also it is higher；But if the doping concentration of phosphorus is too low, its
The field passivation effect of N-type silicon substrate can be died down again.Therefore, find it is a kind of can provide excellent field passivation effect simultaneously itself
Compound and low front-surface field, is the further key for improving back contact battery conversion efficiency.
The content of the invention
It is an object of the invention to provide a kind of local doping front-surface field back contact battery and preparation method thereof and component,
System.The local doping front-surface field back contact battery of the present invention had both reduced preceding surface using the front-surface field of local doping
Itself compound and excellent field passivation effect can be provided to N-type crystalline silicon matrix, made battery has higher open circuit electric
Pressure, short circuit current flow and conversion efficiency.
For achieving the above object, the technical scheme taken of the present invention is：
A kind of local doping front-surface field back contact battery, including N-type crystalline silicon matrix, the preceding table of N-type crystalline silicon matrix
Face includes local doping n+ front-surface fields and undoped region, is set on the surface in locally doping n+ front-surface fields and undoped region
Surface passivation antireflective film before being equipped with；The back surface of N-type crystalline silicon matrix is followed successively by doped region, back surface passivation film from inside to outside
With the metal electrode with doped region Ohmic contact, doped region includes the back surface n+ doped regions and the back of the body being arranged alternately with each other
Surface p+doped region, back surface n+ doped regions are provided with n+ metal electrodes, and back surface p+ doped regions are provided with p+ metals
Electrode.
Wherein, the area of local doping n+ front-surface fields is less than or equal to N-type crystalline silicon matrix front surface area
20%.
Wherein, local doping n+ front-surface fields are linear pattern, and linear pattern is wide 100~200 μm, linear pattern
Between 500~1000 μm of undoped region field width；Or local doping n+ front-surface fields are dot pattern, the point of dot pattern is straight
Footpath is 200~400 μm.
Wherein, the sheet resistance of local doping n+ front-surface fields is 50~150 Ω/sqr, and junction depth is 0.2~2.0 μm；Back surface n
The sheet resistance of+doped region is 20~150 Ω/sqr, and junction depth is 0.3~2.0 μm；The sheet resistance of back surface p+ doped regions be 20~
150 Ω/sqr, junction depth is 0.3~2.0 μm.
A kind of preparation method of local doping front-surface field back contact battery of the present invention, comprises the following steps：
(1) processing, is doped to the preceding surface of N-type crystalline silicon matrix and back surface respectively, in N-type crystalline silicon matrix
Back surface boron ion injection zone and back surface phosphonium ion injection zone that back surface formation is arranged alternately with each other, in N-type crystal
The preceding surface of silicon substrate forms local phosphonium ion injection zone and the undoped region without ion implanting；
(2) N-type crystalline silicon matrix, is subjected to the high temperature anneal；Formed after the completion of annealing local doping n+ front-surface fields,
Back surface n+ doped regions and back surface p+ doped regions；
(3) passivated reflection reducing membrane and then on the preceding surface of N-type crystalline silicon matrix is formed, in the back surface of N-type crystalline silicon matrix
Form passivating film；
(4), N-type crystalline silicon matrix back surface prepare respectively with back surface n+ doped regions and back surface p+ doped regions
The metal electrode of domain Ohmic contact.
Wherein, in step (1), the area of local phosphonium ion injection zone is less than or equal to table before N-type crystalline silicon matrix
The 20% of face area；
The implantation dosage of the phosphonium ion of the local phosphonium ion injection zone of N-type crystalline silicon base body front surface is 1 × 1015cm-2
~4 × 1015cm-2, during ion implanting, set and set on mask, mask between N-type crystalline silicon base body front surface and ion beam
Linear opening, linear opening is wide 100~200 μm, and the non-open area between linear opening is wide 500~1000 μm；Or
Punctual openings are set on person's mask, and the spot diameter of punctual openings is 200~400 μm.
A kind of preparation method of local doping front-surface field back contact battery of the present invention, comprises the following steps：
(1) processing, is doped to the preceding surface of N-type crystalline silicon matrix and back surface respectively, in N-type crystalline silicon matrix
Back surface boron ion injection zone and back surface phosphonium ion injection zone that back surface formation is arranged alternately with each other, in N-type crystal
The preceding surface injection phosphonium ion of silicon substrate；
(2) N-type crystalline silicon matrix, is subjected to the high temperature anneal, n+ front-surface fields, back surface n+ are formed after the completion of annealing
Doped region and back surface p+ doped regions；Then one layer of whole back surface of covering is printed in the back surface of N-type crystalline silicon matrix
Acidproof mask, N-type crystalline silicon matrix the layer-selective of preceding surface printing one cover N-type crystalline silicon matrix preceding surface it is acidproof
Mask；N-type crystalline silicon matrix is put into acid etching liquid, the n+ front-surface fields not covered by acidproof mask are etched away, by N-type
Crystal silicon substrate is put into alkaline solution, removes the acidproof mask of N-type crystalline silicon base body front surface and the acidproof mask of back surface；
(3) passivated reflection reducing membrane and then on the preceding surface of N-type crystalline silicon matrix is formed, in the back surface of N-type crystalline silicon matrix
Form passivating film；
(4), prepared and back surface n+ doped regions and back surface p+ doped regions Europe in the back surface of N-type crystalline silicon matrix
The metal electrode of nurse contact.
Wherein, in step (2), selectivity covering N-type crystalline silicon matrix the acidproof mask in preceding surface area be less than or
Equal to the 20% of the area of N-type crystalline silicon base body front surface；Acidproof mask is linear opening, the wide 100-200 μ of linear opening
Non-open area between m, linear opening is wide 500-1000 μm；Or acidproof mask is punctual openings, the point of punctual openings
A diameter of 200~400 μm.
Wherein, in step (2), acid etching liquid is HF and HNO3Mixed solution；Alkaline solution be potassium hydroxide solution,
Sodium hydroxide solution, tetramethyl ammonium hydroxide solution or ethylenediamine solution.
Wherein, in step (1), the method for processing is doped to the back surface of N-type crystalline silicon matrix is：First in N-type
Crystal silicon substrate back surface carries out ion implanting, and injection element is boron, and implantation dosage is 0.5 × 1015cm-2~3 × 1015cm-2,
Then be selectively ion-implanted in N-type crystalline silicon matrix back surface, injection element be phosphorus, implantation dosage be 3 ×
1015cm-2~8 × 1015cm-2；During ion implanting phosphorus, mask is set between N-type crystalline silicon matrix back surface and ion beam, covered
Linear opening is set on film, and linear opening is wide 50~400 μm.
Wherein, in step (2), the peak temperature of annealing is 800~1100 DEG C, and annealing time is 30~200min, environment
Source of the gas is N2And O2；
In step (3), the preparation method of passivated reflection reducing membrane is to utilize PECVD device on the preceding surface of N-type crystalline silicon matrix
The SiO that first deposition a layer thickness is 5~30nmxDeielectric-coating, then in SiOxRedeposited a layer thickness is 40~80nm on deielectric-coating
SiNxDeielectric-coating；The preparation method of passivating film be N-type crystalline silicon matrix back surface utilize PECVD device or ALD equipment
Make the AlO that a layer thickness is 4~20nmxDeielectric-coating, then in AlOxThe redeposited a layer thickness in the surface of deielectric-coating is 20~
50nm SiNxDeielectric-coating；
In step (4), the preparation method of metal electrode is the N-type crystalline silicon base by the method for silk-screen printing after treatment
Silver-colored aluminium paste is printed on the back surface p+ doped regions of body, silver paste is printed on back surface n+ doped regions, is then sintered place
Reason.
Wherein, carry out before step (1), making herbs into wool processing, N-type crystalline silicon are made to the preceding surface of N-type crystalline silicon matrix first
The resistivity of matrix is 0.5~15 Ω cm, and the thickness of N-type crystalline silicon matrix is 50~300 μm；
Before carrying out step (3), N-type crystalline silicon matrix is put into cleaning machine cleaned, drying and processing.
Present invention also offers a kind of solar cell module, including from top to bottom set gradually preceding layer material, encapsulation
Material, solar cell, encapsulating material, backsheet, solar cell are that the local doping front-surface field back of the body of above-mentioned one kind connects
Electric shock pond.
Present invention also offers a kind of solar cell system, including more than one solar cell module, solar energy
Battery component is above-mentioned solar cell module.
The technological merit of the present invention is mainly reflected in：
N+ doping only is carried out in the preceding surface regional area of N-type crystalline silicon matrix, remaining region undopes, so that office is made
The front-surface field of portion's doping, this structure had not only reduced the compound of front-surface field itself but also can provide excellent to N-type crystalline silicon matrix
Different field passivation effect, made battery has higher open-circuit voltage, short circuit current flow and conversion efficiency.
The local doping front-surface field back contact battery of the present invention is after the passivating film covering of front and rear surfaces is completed, and its is hidden to open
Road voltage (Implied Voc) is up to more than 700mV, dark saturation current density J0＜ 20fA/cm2, the back of the body being made that prints electrode connects
Behind electric shock pond, the internal quantum efficiency of its short-wave band is up to more than 95%, and performance is better than existing battery.
Brief description of the drawings
Fig. 1 is the preparation method step of the local doping front-surface field back contact battery of Example 1 and Example 2 of the present invention
Battery structure schematic cross-section after one.
Fig. 2 is the preparation method step of the local doping front-surface field back contact battery of Example 1 and Example 2 of the present invention
Battery structure schematic cross-section after two.
Fig. 3 is the preparation method step of the local doping front-surface field back contact battery of Example 1 and Example 2 of the present invention
Battery structure schematic cross-section after three.
Fig. 4 is the electricity after the preparation method step 4 of the local doping front-surface field back contact battery of the embodiment of the present invention 1
Pool structure schematic cross-section.
Fig. 5 is the electricity after the preparation method step 5 of the local doping front-surface field back contact battery of the embodiment of the present invention 1
Pool structure schematic cross-section.
Fig. 6 is the electricity after the preparation method step 6 of the local doping front-surface field back contact battery of the embodiment of the present invention 1
Pool structure schematic cross-section.
Fig. 7 is the electricity after the preparation method step 7 of the local doping front-surface field back contact battery of the embodiment of the present invention 1
Pool structure schematic cross-section.
Fig. 8 is the electricity after the preparation method step 4 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Fig. 9 is the electricity after the preparation method step 5 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Figure 10 is the electricity after the preparation method step 6 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Figure 11 is the electricity after the preparation method step 7 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Figure 12 is the electricity after the preparation method step 8 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Figure 13 is the electricity after the preparation method step 9 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Figure 14 is the electricity after the preparation method step 10 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Figure 15 walks for the preparation method of the local doping front-surface field back contact battery of Example 1 and Example 2 of the present invention
The mask structure schematic diagram used in rapid three.
Figure 16 is used in the preparation method step 4 for the local doping front-surface field back contact battery of the embodiment of the present invention 1
Strip perforate mask structure schematic diagram.
Figure 17 is used in the preparation method step 4 for the local doping front-surface field back contact battery of the embodiment of the present invention 1
Point-like perforate mask structure schematic diagram.
Figure 18 is used in the preparation method step 6 for the local doping front-surface field back contact battery of the embodiment of the present invention 2
Strip perforate screen structure schematic diagram.
Figure 19 is used in the preparation method step 6 for the local doping front-surface field back contact battery of the embodiment of the present invention 2
Point-like perforate screen structure schematic diagram.
Embodiment
The present invention is described in detail below in conjunction with embodiment and accompanying drawing, it should be pointed out that described reality
Apply example and be intended merely to facilitate the understanding of the present invention, and do not play any restriction effect to it.
The spot diameter of dot pattern of the present invention, dot pattern are if round dot, then spot diameter is diameter of a circle, such as
Fruit dot pattern is irregular form point shape (such as square, oval or other random shapes), then spot diameter is in pattern
The length of the longest edge of line.
It is shown in Figure 13, the local doping front-surface field back contact battery of one kind of the present embodiment, including N-type crystalline silicon base
Body, the preceding surface of N-type crystalline silicon matrix includes local doping n+ front-surface fields 13 and undoped region, the table before locally doping n+
Surface passivation antireflective film before the surface in face 13 and undoped region is provided with；The back surface of N-type crystalline silicon matrix is from inside to outside
Doped region, back surface passivation film and the metal electrode with doped region Ohmic contact are followed successively by, doped region includes mutual friendship
For the back surface n+ doped regions 12 and back surface p+ doped regions 11 of arrangement, back surface n+ doped regions 12 are provided with n+ metals
P+ metal electrodes 31 are provided with electrode 32, back surface p+ doped regions 11.The local doping front-surface field back of the body of the present embodiment connects
Electric shock pond, only carries out n+ doping, remaining region undopes in the preceding surface regional area of N-type crystalline silicon matrix, so that office is made
The front-surface field of portion's doping, this structure had not only reduced the compound of front-surface field itself but also can provide excellent to N-type crystalline silicon matrix
Different field passivation effect, made battery has higher open-circuit voltage, short circuit current flow and conversion efficiency.
Applicant has found that the area of local doping n+ front-surface fields 13 is less than or equal to N-type crystal by lot of experiments
The area of silicon substrate body front surface 20% when, resulting back contact battery has more excellent performance, additionally it is possible to reduce cost.Office
Portion's doping n+ front-surface fields 13 can be linear pattern, and linear pattern is wide 100~200 μm, non-between linear pattern
500~1000 μm of doped region field width；Local doping n+ front-surface fields 13 can also be dot pattern, and the spot diameter of dot pattern is
200~400 μm.The sheet resistance of local doping n+ front-surface fields 13 is 50~150 Ω/sqr, and junction depth is 0.2~2.0 μm；Back surface n
The sheet resistance of+doped region 12 is 20~150 Ω/sqr, and junction depth is 0.3~2.0 μm；The sheet resistance of back surface p+ doped regions 11 is
20~150 Ω/sqr, junction depth is 0.3~2.0 μm.
Preferably, p+ metal electrodes 31 are aerdentalloy electrode, and n+ metal electrodes 32 are silver electrode.Back surface p+ doped regions
Domain 11 is linear pattern, a width of 200~3000 μm of linear pattern；Back surface n+ doped regions 12 are linear pattern,
A width of 200~2000 μm of linear patterns of openings.The resistivity of N-type crystalline silicon matrix is 0.5~15 Ω cm；N-type crystal
The thickness of silicon substrate is 50~300 μm.Passivated reflection reducing membrane is the SiO that thickness is 5~30nm2Deielectric-coating 20 and thickness is 40~
80nm SiNxDeielectric-coating 22；Passivating film is the AlO that thickness is 4~20nmxDeielectric-coating 21 and the SiN that thickness is 20~50nmxIt is situated between
Plasma membrane 23.
The preparation method of the local front-surface field back contact battery of adulterating of the present invention is carried out with two embodiments below detailed
State.
Embodiment 1
The preparation method of the local doping front-surface field back contact battery of the present embodiment, comprises the following steps：
(1) 156mm × 156mm N-type crystalline silicon matrix 10, is selected, and to the preceding surface system of N-type crystalline silicon matrix 10
Suede processing；The resistivity of N-type crystalline silicon matrix 10 is 0.5~15 Ω cm, preferably 1~5 Ω cm；N-type crystalline silicon matrix 10
Thickness be 50~300 μm, preferably 80~200 μm；Complete the battery structure after this step as shown in Figure 1.
(2) ion implanting, is carried out using N-type crystalline silicon matrix 10 back surface of the ion implantation apparatus after step (1) processing,
Injection element is boron, and implantation dosage is 0.5 × 1015cm-2~3 × 1015cm-2, preferably 1.5 × 1015cm-2~2.5 × 1015cm-2.Complete the battery structure after this step as shown in Figure 2.
(3), carried out optionally using N-type crystalline silicon matrix 10 back surface of the ion implantation apparatus after step (2) processing
Ion implanting, injection element is phosphorus, and implantation dosage is 3 × 1015cm-2~8 × 1015cm-2, preferably 4 × 1015cm-2~6 ×
1015cm-2.During ion implanting, mask 40 is set between the back surface of N-type crystalline silicon matrix 10 and ion beam.The material of mask 40
For graphite, as shown in figure 15, linear opening 41 is set on mask 40,41 wide 50~400 μm of linear opening, preferably 100~
300μm.Cycle or array paracycle that aperture pattern on mask 40 can also arbitrarily arrange for other, its pattern can basis
Multiple choices are needed, are not construed as limiting herein, citing is only carried out and enumerates.The corresponding N-type crystalline silicon in open area on mask 40
The back surface of matrix 10 is injected with boron and phosphorus, and other regions are only then boron injection.The dosage of phosphorus injection is controlled to be more than the agent that boron injects
Amount.Complete the battery structure after this step as shown in Figure 3.
(4), carried out optionally using N-type crystalline silicon matrix 10 preceding surface of the ion implantation apparatus after step (3) processing
Ion implanting, injection element is phosphorus, and implantation dosage is 1 × 1015cm-2~4 × 1015cm-2, preferably 1 × 1015cm-2~3 ×
1015cm-2.During ion implanting, mask 50 is set between the preceding surface of N-type crystalline silicon matrix 10 and ion beam.The material of mask 50
For graphite, as shown in figure 16, linear opening 51 is set on mask 50,51 wide 100~200 μm of linear opening, linear is opened
Non-open area between mouth 51 is wide 500~1000 μm.As shown in figure 17, punctual openings 52, point can also be set on mask 50
A diameter of 200~400 μm of shape opening 52.Cycle or quasi- week that aperture pattern on mask 50 can also arbitrarily arrange for other
Phase array, its pattern can have multiple choices as needed, be not construed as limiting herein, only carry out citing and enumerate.Note on mask 50
Opening portion area no more than the preceding surface of N-type crystalline silicon matrix 10 area 20%.Complete the battery knot after this step
Structure is as shown in Figure 4.
(5), the N-type crystalline silicon matrix 10 after step (4) processing is put into annealing furnace and carries out the high temperature anneal, is annealed
Peak temperature be 800~1100 DEG C, preferably 850~1000 DEG C, annealing time be 30~200min, preferably 60~
200min, environment source of the gas is preferably N2And O2.Local doping n+ front-surface fields 13, back surface n+ doping are formed after the completion of annealing
Region 12 and back surface p+ doped regions 11.The corresponding back surface region of N-type crystalline silicon matrix 10 of opening wherein on mask 40
For back surface n+ doped regions 12, because the dosage of the phosphorus of region injection is more than the dosage of boron, while boron is in silicon
Solid solubility will be less than phosphorus, so the region is adulterated for n+ after annealing.Other regions of back surface are back surface p+ doped regions 11.Its
The sheet resistance of middle local doping n+ front-surface fields 13 is 50~150 Ω/sqr, and junction depth is 0.2~2.0 μm.Back surface n+ doped regions
12 sheet resistance is 20~150 Ω/sqr, and junction depth is 0.3~2.0 μm.The sheet resistance of back surface p+ doped regions 11 be 20~150 Ω/
Sqr, junction depth is 0.3~2.0 μm.Complete the battery structure after this step as shown in Figure 5.
(6), the N-type crystalline silicon matrix 10 after step (5) processing is put into cleaning machine, is cleaned and is dried.Then
On the preceding surface of N-type crystalline silicon matrix 10 a layer thickness is first deposited with PECVD (plasma reinforced chemical vapour deposition) mode
For 5~30nm SiOxDeielectric-coating 20, then in SiOxRedeposited layer of sin on deielectric-coating 20xDeielectric-coating 22, the thickness of film is
40~80nm；With PECVD or ALD (ald) mode one layer of AlO is made in the back surface of N-type crystalline silicon matrix 10x
Deielectric-coating 21, the thickness of film is 4~20nm, then in AlOxThe redeposited layer of sin in the surface of deielectric-coating 21xFilm 23, SiNxFilm 23
Thickness be 20~50nm.The SiO of silicon substrate body front surfacexDeielectric-coating 20 and SiNxDeielectric-coating 22 act as silicon substrate body front surface
Passivation and light antireflective；The AlO of silicon substrate back surfacexDeielectric-coating 21 and SiNxDeielectric-coating 23 act as silicon substrate back of the body table
The passivation in face, while SiNxDeielectric-coating 23 is also played to AlOxThe protective effect of deielectric-coating 21.Complete the battery knot after this step
Structure is as shown in Figure 6.
(7), the back surface p+ of the N-type crystalline silicon matrix 10 by the method for silk-screen printing after step (6) processing adulterates
Aerdentalloy slurry is printed on region 11, silver paste is printed on back surface n+ doped regions 12.Print N-type crystalline silicon after terminating
Matrix 10 is transmitted to be sintered to form Ohmic contact into belt sintering stove, and the formation of aerdentalloy slurry is mixed with back surface p+ after sintering
The p+ metal electrodes 31 of the miscellaneous Ohmic contact of region 11, the n+ metal electrodes 32 with the Ohmic contact of back surface n+ doped regions 12.It is complete
Battery structure after cost step is as shown in Figure 7.So far the system of the local doping front-surface field back contact battery of the present invention is completed
Make.
Embodiment 2
The preparation method of the local doping front-surface field back contact battery of the present embodiment, comprises the following steps：
(1) 156mm × 156mm N-type crystalline silicon matrix 10, is selected, and to the preceding surface system of N-type crystalline silicon matrix 10
Suede processing；The resistivity of N-type crystalline silicon matrix 10 is 0.5~15 Ω cm, preferably 1~5 Ω cm；N-type crystalline silicon matrix 10
Thickness be 50~300 μm, preferably 80~200 μm；Complete the battery structure after this step as shown in Figure 1.
(2) ion implanting, is carried out using N-type crystalline silicon matrix 10 back surface of the ion implantation apparatus after step (1) processing,
Injection element is boron, and implantation dosage is 0.5 × 1015cm-2~3 × 1015cm-2, preferably 1.5 × 1015cm-2~2.5 × 1015cm-2.Complete the battery structure after this step as shown in Figure 2.
(3), carried out optionally using N-type crystalline silicon matrix 10 back surface of the ion implantation apparatus after step (2) processing
Ion implanting, injection element is phosphorus, and implantation dosage is 3 × 1015cm-2~8 × 1015cm-2, preferably 4 × 1015cm-2~6 ×
1015cm-2.During ion implanting, mask 40 is set between the back surface of N-type crystalline silicon matrix 10 and ion beam.The material of mask 40
For graphite, as shown in figure 15, linear opening 41 is set on mask 40,41 wide 50~400 μm of linear opening, preferably 100~
300μm.Cycle or array paracycle that aperture pattern on mask 40 can also arbitrarily arrange for other, its pattern can basis
Multiple choices are needed, are not construed as limiting herein, citing is only carried out and enumerates.The corresponding N-type crystalline silicon in open area on mask 40
The back surface of matrix 10 is injected with boron and phosphorus, and other regions are only then boron injection.The dosage of phosphorus injection is controlled to be more than the agent that boron injects
Amount.Complete the battery structure after this step as shown in Figure 3.
(4) ion implanting, is carried out using N-type crystalline silicon matrix 10 preceding surface of the ion implantation apparatus after step (3) processing,
Injection element is phosphorus, and implantation dosage is 1 × 1015cm-2~4 × 1015cm-2, preferably 1 × 1015cm-2~3 × 1015cm-2.Complete
Battery structure after this step is as shown in Figure 8.
(5), the N-type crystalline silicon matrix 10 after step (4) processing is put into annealing furnace and carries out the high temperature anneal, is annealed
Peak temperature be 800~1100 DEG C, preferably 850~1000 DEG C, annealing time be 30~200min, preferably 60~
200min, environment source of the gas is preferably N2And O2.N+ front-surface fields 14, the and of back surface n+ doped regions 12 are formed after the completion of annealing
Back surface p+ doped regions 11.The corresponding back surface region of N-type crystalline silicon matrix 10 of opening wherein on mask 40 is back surface n
+ doped region 12, because the dosage of the phosphorus of region injection is more than the dosage of boron, while solid solubility of the boron in silicon is low
In phosphorus, so the region is adulterated for n+ after annealing.Other regions of back surface are back surface p+ doped regions 11.The preceding surfaces of wherein n+
The sheet resistance of field 14 is 50~150 Ω/sqr, and junction depth is 0.2~2.0 μm.The sheet resistance of back surface n+ doped regions 12 is 20~150
Ω/sqr, junction depth is 0.3~2.0 μm.The sheet resistance of back surface p+ doped regions 11 be 20~150 Ω/sqr, junction depth be 0.3~
2.0μm.Complete the battery structure after this step as shown in Figure 9.
(6), the back surface of the N-type crystalline silicon matrix 10 after step (5) processing prints one layer of acidproof mask 26, acidproof to cover
Film 26 covers whole back surface.In the acidproof mask 25 of one layer of preceding surface printing of N-type crystalline silicon matrix 10, acidproof mask 25 is only
The preceding surface of local complexity N-type crystalline silicon matrix 10.Print the half tone used as shown in figure 18, wherein linear opening 61 is wide
100-200 μm, the non-open area between linear opening 61 is wide 500-1000 μm, the acidproof mask 25 after corresponding ink excessively
Pattern is strip；Half tone as shown in figure 19 can also be used to be printed, wherein a diameter of 200~400 μ of punctual openings 62
The pattern of acidproof mask 25 after m, corresponding ink excessively is then point-like.Complete the battery structure after this step as shown in Figure 10.
(7), the N-type crystalline silicon matrix 10 after step (6) processing is put into acid etching liquid, in n+ front-surface fields 14 not
The region covered by acidproof mask will be etched away, and remaining region is local doping n+ front-surface fields 13.Acid etching liquid
Use volume ratio for 1: 4: 10 HF/HNO3/H2O solution.Complete the battery structure after this step as shown in figure 11.
(8), the N-type crystalline silicon matrix 10 after step (7) processing is put into alkaline solution, N-type crystalline silicon matrix is removed
The acidproof mask 25 on 10 preceding surfaces and the acidproof mask 26 of back surface.Alkaline solution can be potassium hydroxide, sodium hydroxide, tetramethyl
Base ammonium hydroxide or ethylenediamine.Complete the battery structure after this step as shown in figure 12.
(9), the N-type crystalline silicon matrix 10 after step (8) processing is put into cleaning machine, is cleaned and is dried.Then
On the preceding surface of N-type crystalline silicon matrix 10 a layer thickness is first deposited with PECVD (plasma reinforced chemical vapour deposition) mode
For 5~30nm SiOxDeielectric-coating 20, then in SiOxRedeposited layer of sin on deielectric-coating 20xDeielectric-coating 22, the thickness of film is
40~80nm；With PECVD or ALD (ald) mode one layer of AlO is made in the back surface of N-type crystalline silicon matrix 10x
Deielectric-coating 21, the thickness of film is 4~20nm, then in AlOxThe redeposited layer of sin in the surface of deielectric-coating 21xFilm 23, SiNxFilm 23
Thickness be 20~50nm.The SiO of silicon substrate body front surfacexDeielectric-coating 20 and SiNxDeielectric-coating 22 act as silicon substrate body front surface
Passivation and light antireflective；The AlO of silicon substrate back surfacexDeielectric-coating 21 and SiNxDeielectric-coating 23 act as silicon substrate back of the body table
The passivation in face, while SiNxDeielectric-coating 23 is also played to AlOxThe protective effect of deielectric-coating 21.Complete the battery knot after this step
Structure is as shown in figure 13.
(10), the back surface p+ of the N-type crystalline silicon matrix 10 by the method for silk-screen printing after step (9) processing adulterates
Aerdentalloy slurry is printed on region 11, silver paste is printed on back surface n+ doped regions 12.Print N-type crystalline silicon after terminating
Matrix 10 is transmitted to be sintered to form Ohmic contact into belt sintering stove, and the formation of aerdentalloy slurry is mixed with back surface p+ after sintering
The p+ metal electrodes 31 of the miscellaneous Ohmic contact of region 11, the n+ metal electrodes 32 with the Ohmic contact of back surface n+ doped regions 12.It is complete
Battery structure after cost step is as shown in figure 14.So far the system of the local doping front-surface field back contact battery of the present invention is completed
Make.
Present invention also offers a kind of solar cell module, including from top to bottom set gradually preceding layer material, encapsulation
Material, solar cell, encapsulating material, backsheet, solar cell are that the local doping front-surface field back of the body of above-mentioned one kind connects
Electric shock pond.
Present invention also offers a kind of solar cell system, including more than one solar cell module, solar energy
Battery component is above-mentioned solar cell module.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than to present invention guarantor
The limitation of scope is protected, although being explained with reference to preferred embodiment to the present invention, one of ordinary skill in the art should
Work as understanding, technical scheme can be modified or equivalent substitution, without departing from the reality of technical solution of the present invention
Matter and scope.
Claims (14)
1. a kind of local doping front-surface field back contact battery, including N-type crystalline silicon matrix, it is characterised in that：The N-type crystal
The preceding surface of silicon substrate includes local doping n+ front-surface fields and undoped region, in locally doping n+ front-surface fields and undoped
Surface passivation antireflective film before the surface in region is provided with；The back surface of the N-type crystalline silicon matrix is followed successively by doping from inside to outside
Region, back surface passivation film and the metal electrode with doped region Ohmic contact, the doped region include being arranged alternately with each other
Back surface n+ doped regions and back surface p+ doped regions, the back surface n+ doped regions are provided with n+ metal electrodes, institute
State back surface p+ doped regions and be provided with p+ metal electrodes.
2. a kind of local doping front-surface field back contact battery according to claim 1, it is characterised in that：Local doping n+
The area of front-surface field is less than or equal to the 20% of N-type crystalline silicon matrix front surface area.
3. a kind of local doping front-surface field back contact battery according to claim 1, it is characterised in that：Local doping n+
Front-surface field is linear pattern, and linear pattern is wide 100~200 μm, the undoped region field width 500 between linear pattern~
1000μm；Or local doping n+ front-surface fields are dot pattern, the spot diameter of dot pattern is 200~400 μm.
4. a kind of local doping front-surface field back contact battery according to claim 1, it is characterised in that：Local doping n+
The sheet resistance of front-surface field is 50~150 Ω/sqr, and junction depth is 0.2~2.0 μm；The sheet resistance of back surface n+ doped regions be 20~
150 Ω/sqr, junction depth is 0.3~2.0 μm；The sheet resistance of back surface p+ doped regions be 20~150 Ω/sqr, junction depth be 0.3~
2.0μm。
5. a kind of preparation method of local doping front-surface field back contact battery, it is characterised in that：Comprise the following steps：
(1) processing, is doped to the preceding surface of N-type crystalline silicon matrix and back surface respectively, in the back of the body table of N-type crystalline silicon matrix
Face forms the back surface boron ion injection zone and back surface phosphonium ion injection zone being arranged alternately with each other, in N-type crystalline silicon base
The preceding surface of body forms local phosphonium ion injection zone and the undoped region without ion implanting；
(2), N-type crystalline silicon matrix is made annealing treatment；Local doping n+ front-surface fields, back surface n+ are formed after the completion of annealing
Doped region and back surface p+ doped regions；
(3) passivated reflection reducing membrane and then on the preceding surface of N-type crystalline silicon matrix is formed, is formed in the back surface of N-type crystalline silicon matrix
Passivating film；
(4), N-type crystalline silicon matrix back surface prepare respectively with back surface n+ doped regions and back surface p+ doped regions Europe
The metal electrode of nurse contact.
6. a kind of preparation method of local doping front-surface field back contact battery according to claim 5, it is characterised in that：
In step (1), the area of local phosphonium ion injection zone is less than or equal to N-type crystalline silicon matrix front surface area
20%；
The implantation dosage of the phosphonium ion of the local phosphonium ion injection zone of N-type crystalline silicon base body front surface is 1 × 1015cm-2~4 ×
1015cm-2, during ion implanting, set between N-type crystalline silicon base body front surface and ion beam and linear be set on mask, mask
Opening, linear opening is wide 100~200 μm, and the non-open area between linear opening is wide 500~1000 μm；Or mask
Upper setting punctual openings, the spot diameter of punctual openings is 200~400 μm.
7. a kind of preparation method of local doping front-surface field back contact battery, it is characterised in that：Comprise the following steps：
(1) processing, is doped to the preceding surface of N-type crystalline silicon matrix and back surface respectively, in the back of the body table of N-type crystalline silicon matrix
Face forms the back surface boron ion injection zone and back surface phosphonium ion injection zone being arranged alternately with each other, in N-type crystalline silicon base
The preceding surface injection phosphonium ion of body；
(2), N-type crystalline silicon matrix is made annealing treatment, n+ front-surface fields, back surface n+ doped regions are formed after the completion of annealing
With back surface p+ doped regions；Then covered in one layer of whole the acidproof of back surface of covering of back surface printing of N-type crystalline silicon matrix
Film, the acidproof mask in preceding surface of N-type crystalline silicon matrix is covered in the layer-selective of preceding surface printing one of N-type crystalline silicon matrix；By N
Type crystal silicon substrate is put into acid etching liquid, etches away the n+ front-surface fields not covered by acidproof mask, by N-type crystalline silicon base
Body is put into alkaline solution, removes the acidproof mask of N-type crystalline silicon base body front surface and the acidproof mask of back surface；
(3) passivated reflection reducing membrane and then on the preceding surface of N-type crystalline silicon matrix is formed, is formed in the back surface of N-type crystalline silicon matrix
Passivating film；
(4), N-type crystalline silicon matrix back surface prepare respectively with back surface n+ doped regions and back surface p+ doped regions Europe
The metal electrode of nurse contact.
8. a kind of preparation method of local doping front-surface field back contact battery according to claim 7, it is characterised in that：
In step (2), the area of the acidproof mask in preceding surface of selectivity covering N-type crystalline silicon matrix is less than or equal to N-type crystalline silicon
The 20% of the area of base body front surface；
Acidproof mask is linear opening, and linear opening is wide 100~200 μm, and the non-open area between linear opening is wide
500~1000 μm；Or acidproof mask is punctual openings, the spot diameter of punctual openings is 200~400 μm.
9. a kind of preparation method of local doping front-surface field back contact battery according to claim 7, it is characterised in that：
In step (2), acid etching liquid is HF and HNO3Mixed solution；Alkaline solution be potassium hydroxide solution, sodium hydroxide solution,
Tetramethyl ammonium hydroxide solution or ethylenediamine solution.
10. according to a kind of preparation method of any described local front-surface field back contact batteries of adulterating of claim 5-9, it is special
Levy and be：In step (1), the method for processing is doped to the back surface of N-type crystalline silicon matrix is：First in N-type crystalline silicon
Matrix back surface carries out ion implanting, and injection element is boron, and implantation dosage is 0.5 × 1015cm-2~3 × 1015cm-2, then in N
Type crystal silicon substrate back surface is selectively ion-implanted, and injection element is phosphorus, and implantation dosage is 3 × 1015cm-2~8 ×
1015cm-2；During ion implanting phosphorus, set between N-type crystalline silicon matrix back surface and ion beam and lines are set on mask, mask
Shape opening, linear opening is wide 50~400 μm.
11. according to a kind of preparation method of any described local front-surface field back contact batteries of adulterating of claim 5-9, it is special
Levy and be：In step (2), the peak temperature of annealing is 800~1100 DEG C, and annealing time is 30~200min, environment gas
Source is N2And O2；
In step (3), the preparation method of passivated reflection reducing membrane is first sunk using PECVD device on the preceding surface of N-type crystalline silicon matrix
The SiO that product a layer thickness is 5~30nmxDeielectric-coating, then in SiOxRedeposited a layer thickness is 40~80nm's on deielectric-coating
SiNxDeielectric-coating；The preparation method of passivating film be N-type crystalline silicon matrix back surface utilize PECVD device or ALD equipment system
Make the AlO that a layer thickness is 4~20nmxDeielectric-coating, then in AlOxThe redeposited a layer thickness in the surface of deielectric-coating is 20~50nm
SiNxDeielectric-coating；
In step (4), the preparation method of metal electrode is the N-type crystal by the method for silk-screen printing after step (3) processing
Silver-colored aluminium paste is printed on the back surface p+ doped regions of silicon substrate, silver paste is printed on back surface n+ doped regions, is then burnt
Knot processing.
12. according to a kind of preparation method of any described local front-surface field back contact batteries of adulterating of claim 5-9, it is special
Levy and be：Carry out before step (1), making herbs into wool processing is made to the preceding surface of N-type crystalline silicon matrix first, N-type crystalline silicon matrix
Resistivity is 0.5~15 Ω cm, and the thickness of N-type crystalline silicon matrix is 50~300 μm；
Before carrying out step (3), N-type crystalline silicon matrix is put into cleaning machine cleaned, drying and processing.
13. a kind of solar cell module, including from top to bottom set gradually preceding layer material, encapsulating material, solar cell,
Encapsulating material, backsheet, it is characterised in that：The solar cell, which is that any described one kind of claim 1-4 is local, to be mixed
Miscellaneous front-surface field back contact battery.
14. a kind of solar cell system, including more than one solar cell module, it is characterised in that：The solar energy
Battery component is the solar cell module described in claim 13.
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| CN112701174A (en) * | 2020-12-29 | 2021-04-23 | 泰州中来光电科技有限公司 | Back emitter passivation contact battery and preparation method, assembly and system thereof |
| CN114038921B (en) * | 2021-11-05 | 2024-03-29 | 晶科能源(海宁)有限公司 | Solar cell and photovoltaic module |
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