CN103337561A - Fabrication method of surface fields of full-back-contact solar cell - Google Patents
Fabrication method of surface fields of full-back-contact solar cell Download PDFInfo
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Abstract
The invention belongs to the field of solar cells, and provides a fabrication method of surface fields of a full-back-contact solar cell. The fabrication method comprises the steps that a first p-type doped doping layer is formed on a polished or woolen second n-type silicon wafer substrate surface by a thermal diffusion method; a first dielectric film is deposited on the second surface of the formed first p-type doped doping layer; a partial area of the first dielectric film on the second surface is subjected to etching treatment; a first partial area film opening pattern is obtained; the first p-type doping layer at the first partial area film opening pattern is removed; a second n-type doped doping layer is formed on a first surface and at the first film opening pattern of the second surface by adopting thermal diffusion; a second dielectric film is deposited on the second surface; a silicon wafer is placed in an etching solution for back etching; and a third n-type doping layer is obtained on the first surface. Compared with the prior art, the fabrication method adopts a one-step thermal diffusion and back etching combination method, and the front surface field and the back surface field which are different in doping concentration are formed on the two surfaces of a substrate, so that a fabrication flow of the surface fields of the full-back-contact solar cell is simplified greatly.
Description
Technical field:
The present invention relates to the preparation method of a kind of full back of the body contact solar battery surface field, belong to the solar cell field.
Background technology:
Full back of the body contact solar cell is considered to a kind of efficient solar battery that the scale of mass production potentiality are arranged very much, and the structure of its battery mainly comprises following components as shown in Figure 1 usually: n type monocrystalline substrate (11); Be positioned at the doped layer (12) of substrate back; Be positioned at another doped layer (13) of substrate back; Be positioned at the doped layer (14) of substrate face; Be positioned at the dielectric film (16) on the doped layer; Be positioned at another dielectric layer (15) of substrate back; Be positioned at the metal electrode (17) of substrate back, be generally silver electrode; Be positioned at another metal electrode (18) of substrate back, be generally the aluminium electrode.The major advantage of full back of the body contact solar cell is: 1) adopt the high n type monocrystalline substrate (11) of minority carrier life time for substrate, can obtain high open circuit voltage; 2) metal electrode (17) and metal electrode (18) all are positioned at substrate back, and substrate face does not have metal electrode and blocks, and can obtain high short circuit current; 3) all electrodes are positioned at substrate back, need not consider the substrate face shading, so the width of metal electrode (17) and metal electrode (18) can design widelyer, thereby are conducive to reduce series resistance, the raising open circuit voltage.Based on above-mentioned advantage, full back of the body contact solar cell can obtain the conversion efficiency higher than conventional batteries.
A key issue of making full back of the body contact solar cell is to form suitable doped layer (13) and the doped layer (14) of doping content in n type monocrystalline substrate (11) front and rear surfaces.Usually require the doping content of doped layer (13) to want high, to satisfy the needs of metal-semiconductor ohmic contact; The doping content of doped layer (14) then will be hanged down, to satisfy the substrate front surface to the requirement of inactivating performance and optical property.In the full back of the body contact of preparation solar cell process, normally adopt the mode of thermal diffusion to form doped layer (13) and doped layer (14) simultaneously in the substrate front and rear surfaces, the doped layer that this mode forms (13) is identical with the doping content of doped layer (14), is difficult to satisfy simultaneously doped layer (13) to the requirement to inactivating performance and optical property of metal-semiconductor ohmic contact and doped layer (14).For addressing the above problem, documents (US Patent No. 7339110B1) has been taked following technical scheme:
Step 1: on n type monocrystalline substrate surface, form the p-type doped layer by thermal diffusion, obtain one deck thermal oxidation silicon dioxide layer at the p-type doped layer simultaneously;
Step 2: the etching barrier layer of deposit patterned on substrate back thermal oxidation silicon dioxide layer;
Step 3: utilize chemical etching to remove the thermal oxidation silicon dioxide that front and the back side are not etched barrier layer protected, be etched away the p-type doped layer that the silicon dioxide place is removed at front surface and the back side then;
Step 4: utilize thermal diffusion to remove thermal oxidation silicon dioxide place formation n type doped layer at front surface and the back side, form thermal oxidation silicon dioxide at n type doped layer simultaneously;
Step 5: at entire substrate backside deposition etching barrier layer;
Step 6: surface-texturing, positive simultaneously n type doped layer is removed, and back side n type doped layer can not be removed under the protection of etching barrier layer;
Step 7: remove the back-etching barrier layer, and utilize thermal diffusion to form n type doped layer at front surface, the back side can not be subjected to the thermal diffusion influence under the protection of thermal oxidation silicon dioxide.
The technique scheme of documents adopts the method on twice thermal diffusion, thermal oxidation silicon dioxide and twice deposition-etch barrier layer to obtain the front and rear surfaces field of different levels of doping.The part but this technical scheme comes with some shortcomings: at first, adopt twice thermal diffusion and twice deposition-etch barrier layer, increased the complexity of the technological process of cell preparation; Secondly, twice thermal diffusion and formation thermal oxidation silicon dioxide all relate to pyroprocess, can reduce the body life time of substrate; At last, relate to deposition and the removal on multiple etching barrier layer, need to consume more raw material, manufacturing cost is higher.
Summary of the invention
The objective of the invention is to propose the manufacture method of a kind of full back of the body contact solar battery surface field, to obtain the more full back of the body contact solar cell of high conversion efficiency, emphasis has solved in the full back of the body contact solar cell preparation process, forms the technical barrier of the surface field of different levels of doping on former and later two surfaces of Semiconductor substrate.
For achieving the above object, the present invention proposes the manufacture method of a kind of full back of the body contact solar battery surface field, and this manufacture method may further comprise the steps:
Step 1: the surface two of the substrate after polishing or making herbs into wool adopts the method for thermal diffusion to form the doped layer one that p-type is mixed;
Step 2: at the described surperficial two deposition medium films one of step 1;
Step 3: the regional area to the dielectric film one that deposits in the step 2 carries out etching processing, obtains local and opens film figure one, and remove the p-type doped layer one that local is opened film figure one place;
Step 4: open the doped layer two that the method that adopts diffusion in film figure one place forms the doping of n type at substrate surface one and the described local that removes doped layer one of step 3;
Step 5: deposition medium film two on surface two;
Step 6: place etching solution to anti-carve said n type silicon chip, one forms n type doped layer three on the surface;
As a further improvement on the present invention, the monocrystalline silicon piece that the described Semiconductor substrate of technique scheme step 1 is mixed for the n type, the volume resistivity of described Semiconductor substrate is between 0.5～20.0 Ω cm.
As a further improvement on the present invention, the described p-type doped layer one of technique scheme step 1 is that the mode by thermal diffusion forms, and its square resistance is between 50～200 Ω cm.
As a further improvement on the present invention, individual layer or laminate film that the described dielectric film one of technique scheme step 2 is silicon nitride, silica, carborundum, aluminium oxide, above-mentioned dielectric film one thickness is between 50～300nm, as preferred scheme, the thickness of dielectric film one is between 110～180nm.
As a further improvement on the present invention, the technique scheme step 3 is described carries out etching processing to dielectric film one regional area, obtain local and open method that film figure one refers to utilize corrosivity slurry etching or laser ablation dielectric film one is removed in the local area, thereby obtain back side dielectric film one perforate of patterning.
As a further improvement on the present invention, the technique scheme step 3 is described to be removed local and opens the p-type doped layer one at film figure one place and refer to after local is opened film, adopt alkaline corrosion liquid that substrate is carried out etching, sodium hydroxide solution as 1.2%～2% (w/w), etching is 15～25 minutes under 70 ℃ of conditions, removes local and opens film figure one place's degree of depth greater than 0.3～0.5 micron skin-material.
As a further improvement on the present invention; the doped layer two that the described n type of technique scheme step 4 mixes is by diffuseing to form under the atmosphere of phosphorus source; after the diffusion; obtain the doped layer two that the n type mixes on the entire substrate surface for a moment; and on the surface two of substrate; owing to the protection that stops of dielectric film one, two meetings of doped layer that the n type mixes are opened film figure one place at local and are formed.The square resistance of this doped layer two is between 30～100 Ω/, and as preferred scheme, the square resistance of doped layer two is between 60～80 Ω/.
As a further improvement on the present invention, the technique scheme step 5 is described at surperficial two deposition medium films two, this dielectric film is individual layer or the laminate film of silicon nitride, silica, carborundum, aluminium oxide, the thickness of above-mentioned dielectric film two is between 50～130nm, as preferred scheme, the thickness of dielectric film two is between 70～90nm.
As a further improvement on the present invention, described the anti-carving of technique scheme step 6 refers to silicon chip substrate is placed etching solution, and etching solution will react with the doped layer of silicon chip surface, after the reaction, the doping content of doped layer can reduce, and showing as square resistance can raise.This etching solution can be [YZJ1] solution that contains hydrofluoric acid, nitric acid component.
As a further improvement on the present invention, the technique scheme step 6 is described to anti-carve the back doped layer three that the one n type that forms mixes on the surface, its square resistance is greater than the square resistance of the doped layer two of n type doping, the square resistance of the doped layer three that the n type mixes is between 100～250 Ω/, as preferred scheme, the square resistance of doped layer three is between 130～160 Ω/.Anti-carving in the process has dielectric film two masking protections owing to substrate surface two, and the doping content of the doped layer two that the n type that forms at substrate surface two mixes will can not be affected.
After the technique scheme step 6, as more preferably scheme, add step 7, remove dielectric film one and the dielectric film two of deposition on the surface two; As more preferably scheme, add step 7, remove deielectric-coating one and the deielectric-coating two of deposition on the surface two, simultaneously doped layer one, doped layer two and doped layer three are carried out slightly, obtain p-type doped layer four, n type doped layer five on surface two respectively, obtain n type doped layer six on surface one.The removal of dielectric film one and dielectric film two is to finish by soak 10～50 minutes in 10%～30% hydrofluoric acid solution.
A kind of full back of the body contact solar battery surface field preparation method that the present invention proposes; form n type doped layer by a step thermal diffusion in the substrate front and rear surfaces; then under the masking protection effect of dielectric film to back side n type doped layer; utilize etching solution to the corrasion of the n type doped layer of front surface; reduce the doping content of front surface n type doped layer; thereby formed different front-surface field and the back of the body surface field of doping content in the substrate front and rear surfaces; satisfied full back of the body contact solar cell to the requirement of back surface field metal-semiconductor ohmic contact; improved the inactivating performance of front-surface field and to the absorption of shortwave photon; reduced the lateral transport distance of electronics, thereby the full back of the body contact solar cell of this method preparation can obtain higher transformation efficiency.
Description of drawings
Fig. 1 is full back of the body contact solar battery structure schematic diagram;
A kind of full back of the body contact solar battery surface field preparation method's flow chart that Fig. 2 proposes for the present invention;
Fig. 3 is the structural representation of Semiconductor substrate after step 1 is handled in the embodiment of the invention;
Fig. 4 is the structural representation of Semiconductor substrate after step 2 is handled in the embodiment of the invention;
Fig. 5 is the structural representation of Semiconductor substrate in the embodiment of the invention after the step 3 local is opened the film processing;
Fig. 6 removes structural representation after local is opened the n type doped layer two at film figure one place for Semiconductor substrate in the embodiment of the invention through step 3;
Fig. 7 is the structural representation of Semiconductor substrate after step 4 is handled in the embodiment of the invention;
Fig. 8 is the structural representation of Semiconductor substrate after step 5 is handled in the embodiment of the invention;
Fig. 9 is the structural representation of Semiconductor substrate after step 6 is handled in the embodiment of the invention;
Figure 10 is the structural representation of Semiconductor substrate after step 7 is handled in the embodiment of the invention.
Embodiment
For purpose of the present invention, feature and advantage more clearly are described, the present invention will be described below in conjunction with the accompanying drawings and the specific embodiments.
A lot of details and detailed technological parameter have been disclosed among the embodiment that is described below, but the present invention can also adopt other alternate manners that are different from the embodiment that announces below to implement, those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.In addition; the present invention is described in conjunction with schematic diagram; for convenience of explanation; accompanying drawing used herein is as relating to solar battery structure; only use as schematic diagram; its size is not to carry out equal proportion convergent-divergent gained according to the practical devices size, so this accompanying drawing should not limit the scope of protection of the invention.
Embodiment
The embodiment of the invention discloses the preparation method of a kind of full back of the body contact contact solar battery surface field, the solar battery structure schematic diagram of its flow process and each step correspondence such as Fig. 3～and shown in Figure 10, specifically may further comprise the steps:
Step 1: as shown in Figure 3, adopt the method for thermal diffusion to form the doped layer 1 that p-type is mixed at the back side of the n of twin polishing type monocrystalline silicon Semiconductor substrate 21.In above-mentioned steps, n type monocrystalline silicon Semiconductor substrate 21 is placed in the environment that is filled with the Boron tribromide G﹠O, and applies with 800 ℃ or above high temperature for example 1000 ℃.After the thermal diffusion, the square resistance of above-mentioned doped layer 1 between 110～170 Ω/, 130 Ω/ for example, 150 Ω/ or 160 Ω/.
Step 2: as shown in Figure 4, deposition medium film 1 on the doped layer 1 that the described p-type of step 1 is mixed.Above-mentioned dielectric film 1 is silicon nitride, and thickness is between 110～180nm.
Step 3: as Fig. 5, shown in Figure 6, the described dielectric film 1 of step 2 is carried out etching processing, obtain local and open film figure 1, and remove local and open the doped layer 1 that the p-type at film figure one 26 places is mixed.Dielectric film 1 adopts the method for laser ablation to come local to remove; The doped layer 1 that local is opened the p-type doping at film figure one 26 places adopts the method for wet-chemical etching making herbs into wool to remove, and obtains suede structure at the substrate front surface simultaneously.
Step 4: as shown in Figure 7, open the doped layer 2 23 that the method that adopts thermal diffusion in film figure one 26 places forms the doping of n type at n type monocrystalline silicon Semiconductor substrate 21 front surfaces and the described local of step 3.The doped layer 2 23 that the said n type mixes is by substrate being placed phosphorus oxychloride and oxygen atmosphere, and applies that temperature about 800 ℃ forms, and its square resistance is between 60～80 Ω/.
Step 5: as shown in Figure 8, the n type monocrystalline silicon Semiconductor substrate 21 backside deposition dielectric films 2 27 after handling via step 4.Above-mentioned dielectric film 2 27 is silicon nitride, and thickness is between 70～90nm.
Step 6: as shown in Figure 9, place etching solution to anti-carve the described n type of step 5 monocrystalline substrate 21, obtain the doped layer 3 28 that the n type mixes at front surface.Above-mentioned etching solution is certain density hydrofluoric acid/nitric acid/water mixed solution, be 1 as volume ratio: (25～500): the HF/HNO3/H2O mixed solution of (5～100), as hydrofluoric acid/nitric acid of 1: 50: 10/water mixed solution, the time that anti-carves is between 0.5～10 minute.The square resistance of the doped layer 3 28 that the said n type mixes is between 130～160 Ω/, as 150 Ω/.
Step 7: as shown in figure 10, the described n type of step 6 monocrystalline substrate 21 is put into dielectric film 1 and the dielectric film 2 27 that 25% hydrofluoric acid solution is removed the substrate back deposition, and doped layer 1, doped layer 2 23 and doped layer 3 28 carried out slight etching, etch amount is all less than 0.5um, thereby obtain p-type doped layer 4 20, n type doped layer 5 29 on n type monocrystalline substrate 21 back of the body surfaces respectively, obtain n type doped layer 6 24 on surface one.
Claims (9)
1. a full back of the body contacts solar battery surface field preparation method, it is characterized in that this manufacture method may further comprise the steps:
Step 1: the surface two (02) of the n type monocrystalline silicon piece (21) after polishing or making herbs into wool adopts the method for thermal diffusion to form the doped layer one (22) that p-type is mixed;
Step 2: at described surperficial two (02) the deposition medium films one (25) of step 1;
Step 3: the regional area to the dielectric film one (25) that deposits in the step 2 carries out etching processing, obtains local and opens film figure one (26), and remove local and open the p-type doped layer one that film figure one (26) is located;
Step 4: on the surface one (01) of substrate and the described local that removes doped layer one of step 3 open film figure one (26) and locate to adopt the method for thermal diffusion to form the doped layer two (23) that the n type mixes;
Step 5: two (02) go up deposition medium film two (27) on the surface;
Step 6: place etching solution to anti-carve said n type silicon chip, form n type doped layer three (28) on the surface one (01) of substrate.
2. a kind of full back of the body according to claim 1 contacts solar battery surface field preparation method; it is characterized in that: go up deposition medium film one (25) surperficial two (02) in the described step 2 doped layer one (22) is carried out masking protection, dielectric film one (25) is silicon nitride, silica, silicon oxynitride, aluminium oxide or their laminate film.
3. a kind of full back of the body according to claim 1 contacts solar battery surface field preparation method, it is characterized in that: in the described step 3 dielectric film one (25) regional area is carried out etching processing, obtain local and open film figure one (26), the method for etching processing is laser ablation or corrosivity slurry etching.
4. a kind of full back of the body according to claim 1 contacts solar battery surface field preparation method, it is characterized in that: removing local in the described step 3, to open the method for the p-type doped layer that film figure one (26) locates be to adopt alkaline corrosion liquid that substrate is carried out etching, remove that local opens that film figure one (26) is located and surface one (01) degree of depth of substrate greater than 0.3 micron skin-material.
5. a kind of full back of the body according to claim 4 contacts solar battery surface field preparation method, it is characterized in that: described alkaline corrosion liquid is that concentration is lower than 5%, temperature is higher than 60 ℃ NaOH or potassium hydroxide solution, or is that concentration is lower than 1%, temperature is higher than 30 ℃ tetramethyl ammonium hydroxide solution.
6. a kind of full back of the body according to claim 1 contacts solar battery surface field preparation method, it is characterized in that: at surperficial two (02) deposition one deck dielectric films two (27), dielectric film two (27) can be the laminate film of silicon nitride, silica, carborundum, aluminium oxide and their compositions in the described step 5.
7. a kind of full back of the body according to claim 1 contacts solar battery surface field preparation method, it is characterized in that: anti-carving described in the described step 6 refers to the reaction by etching liquid and silicon chip surface one (01), and the square resistance of the n type doped layer two on feasible surface one (01) is risen to 100～200 Ω/ of n type doped layer three by 30～90 Ω/.
8. a kind of full back of the body according to claim 7 contacts solar battery surface field preparation method, and it is characterized in that: its described etching liquid is the aqueous solution that contains hydrofluoric acid and nitric acid component.
9. a kind of full back of the body according to claim 1 contacts solar battery surface field preparation method, it is characterized in that after its step 6, add step 7, remove surface two (02) and go up dielectric film one (25) and the dielectric film two (27) of deposition, or when removing deielectric-coating one (25) and deielectric-coating two (27), to doped layer one (22), doped layer two (23) and doped layer three (28) carry out slight etching, thereby obtain p-type doped layer four (20) on surface two (02) respectively, n type doped layer five (29) obtains n type doped layer six (24) on surface one (01).
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103646992A (en) * | 2013-11-28 | 2014-03-19 | 奥特斯维能源（太仓）有限公司 | Preparation method of P-type crystal silicon double-sided cell |
| CN103794678A (en) * | 2013-11-29 | 2014-05-14 | 奥特斯维能源（太仓）有限公司 | Back junction-back contact solar cell front surface field preparation method |
| CN105514219A (en) * | 2016-01-26 | 2016-04-20 | 常州天合光能有限公司 | Method of forming all-back-contact electrode solar battery ultra-low surface concentration front surface field |
| CN106252449A (en) * | 2016-08-26 | 2016-12-21 | 泰州中来光电科技有限公司 | Local doping front-surface field back contact battery and preparation method thereof and assembly, system |
| CN112002669A (en) * | 2020-09-03 | 2020-11-27 | 山东芯源微电子有限公司 | Method for solving back reverse osmosis of silicon wafer single-side diffusion |
| CN113948611A (en) * | 2021-10-15 | 2022-01-18 | 浙江爱旭太阳能科技有限公司 | P-type IBC battery, preparation method and assembly thereof, and photovoltaic system |
| WO2023213088A1 (en) * | 2022-05-05 | 2023-11-09 | 通威太阳能（成都）有限公司 | Solar cell and preparation method therefor, and photovoltaic system |
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| CN103646992A (en) * | 2013-11-28 | 2014-03-19 | 奥特斯维能源（太仓）有限公司 | Preparation method of P-type crystal silicon double-sided cell |
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| CN106252449A (en) * | 2016-08-26 | 2016-12-21 | 泰州中来光电科技有限公司 | Local doping front-surface field back contact battery and preparation method thereof and assembly, system |
| CN106252449B (en) * | 2016-08-26 | 2017-09-26 | 泰州中来光电科技有限公司 | Local doping front-surface field back contact battery and preparation method thereof and component, system |
| CN112002669A (en) * | 2020-09-03 | 2020-11-27 | 山东芯源微电子有限公司 | Method for solving back reverse osmosis of silicon wafer single-side diffusion |
| CN113948611A (en) * | 2021-10-15 | 2022-01-18 | 浙江爱旭太阳能科技有限公司 | P-type IBC battery, preparation method and assembly thereof, and photovoltaic system |
| CN113948611B (en) * | 2021-10-15 | 2023-12-01 | 浙江爱旭太阳能科技有限公司 | P-type IBC battery, preparation method thereof, assembly and photovoltaic system |
| WO2023213088A1 (en) * | 2022-05-05 | 2023-11-09 | 通威太阳能（成都）有限公司 | Solar cell and preparation method therefor, and photovoltaic system |
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Application publication date: 20131002 |