CN103794678A - Back junction-back contact solar cell front surface field preparation method - Google Patents
Back junction-back contact solar cell front surface field preparation method Download PDFInfo
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- CN103794678A CN103794678A CN201310620944.4A CN201310620944A CN103794678A CN 103794678 A CN103794678 A CN 103794678A CN 201310620944 A CN201310620944 A CN 201310620944A CN 103794678 A CN103794678 A CN 103794678A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 74
- 239000010703 silicon Substances 0.000 claims abstract description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000010408 film Substances 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 30
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 9
- 239000011574 phosphorus Substances 0.000 claims abstract description 9
- 238000005498 polishing Methods 0.000 claims abstract description 9
- 238000000608 laser ablation Methods 0.000 claims abstract description 5
- 238000001465 metallisation Methods 0.000 claims abstract description 5
- 239000002002 slurry Substances 0.000 claims abstract description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 10
- 229910004012 SiCx Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000000427 thin-film deposition Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical group ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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Abstract
The invention relates to a solar cell preparation method, in particular to a back junction-back contact solar cell front surface field preparation method. The back junction-back contact solar front surface field preparation method comprises the following steps that: double-sided polishing is performed on a silicon wafer; double-sided texturing processing is performed on the silicon wafer through laser ablation or corrosive slurry etching; the silicon wafer is arranged in a diffusion furnace so as to be subjected to double-sided phosphorus source diffusion processing; a dielectric film is deposited on the whole area of the back surface of the silicon wafer; PSG on the front surface of the silicon wafer is removed; the silicon wafer is arranged in an etching solution so as to be etched; the dielectric thin film on the back surface of the silicon wafer is removed; and subsequent dielectric film deposition and metallization processing are performed on the silicon wafer. According to the back junction-back contact solar front surface field preparation method of the invention, the dielectric film is deposited on the back surface of the silicon wafer, and therefore, the etching process exerts no influences on an n+ layer of a back surface base region of a cell, and the doping concentration of the n+ layer can be maintained, and as a result, the reduction of the contact resistance of back surface base region metal and a silicon substrate can be facilitated, and the performance of the solar cell can be improved.
Description
Technical field
The present invention relates to a kind of manufacture method of solar cell, particularly a kind of preparation method who carries on the back knot-back of the body contact solar cell front-surface field.
Background technology
Back of the body knot-back of the body contact solar cell is considered to the very potential efficient solar battery of one, and its major advantage is: the N-shaped silicon chip that 1) employing minority carrier life time is high is as matrix, and mating surface passivation, can obtain high open circuit voltage; 2) electrode is all positioned at cell backside, and shading that front surface is electrodeless loss, can obtain high short circuit current; 3) electrode is all positioned at cell backside, need not consider positive shading, therefore can design wider electrode width, thereby reduces the series resistance of battery.Based on above advantage, back of the body knot-back of the body contact efficiency of solar cell can be up to more than 24%.In back of the body knot-back of the body contact solar cell preparation process, conventionally need to form at battery front surface the n of certain doping content
+layer reduces the lateral transport resistance of electronics, improves the passivation effect of front surface, thereby improves optics and the electric property of battery.Therefore,, in preparation back of the body knot-back of the body contact solar cell process, how effectively to form the suitable n of doping content at battery front surface
+layer just seems particularly important.
Conventionally can be diffused in back of the body knot-back of the body contact solar cell front and rear surfaces by phosphorus source and form n
+heavily doped layer.But by a phosphorus source diffusion, meeting under the condition that back of the body knot-back of the body contact cell backside base metal-silicon contact resistance is little the n obtaining
+the doping content of front-surface field is higher, can reduce the passivation effect of front-surface field, thereby affects the open circuit voltage of battery; In addition, the n of high-dopant concentration
+front-surface field also can reduce the absorption of front surface to shortwave photon, thereby can reduce the short circuit current of battery.The present invention is directed to back of the body knot-back of the body contact solar cell and form the problems referred to above in front-surface field process, develop a kind of doping content suitable, there is the n of good electrical and optical property
+front-surface field preparation technology.
Summary of the invention
Goal of the invention: the object of the invention is in order to solve the deficiencies in the prior art, provide one can effectively reduce n
+back of the body knot-back of the body contact solar cell front-surface field preparation method of doped layer doping content.
Technical scheme: in order to realize above object, a kind of back of the body knot-back of the body contact solar cell front-surface field preparation method provided by the invention, is characterized in that: comprise the following steps
(a) silicon chip is carried out to twin polishing, utilize the diffusion of boron source to obtain p to the silicon chip back side after polishing
+emitter, at the dielectric film of silicon chip back side deposition 80-200nm;
(b) remove dielectric film at silicon chip back side local, must arrive base and open film figure;
(c) silicon chip is carried out to surface-texturing processing;
(d) silicon chip is put into diffusion furnace and carried out two-sided phosphorus source DIFFUSION TREATMENT, film place is opened and front surface obtains n in base overleaf
+doped layer;
(e) at the dielectric film of silicon chip back side deposition 20-150nm;
(f) remove silicon chip after step (d) step (e) is processed, the phosphorosilicate glass of its front-surface field;
(g) silicon chip is put into etching solution etching 0.5-1min to front side of silicon wafer sheet resistance be 100-200 Ω/;
(h) silicon chip after etching is put into HF solution and soaked the dielectric film to remove silicon chip back side;
(i) silicon chip is carried out to subsequent medium thin film deposition and metallization process;
Dielectric film in step (a) is one or more stacked compositions of SiNx, SiOx, SiCx.
Adopt being placed on of laser ablation or wet-chemical chamber to remove silicon chip back side local in step (b) and remove dielectric film.
Step (d) is put into diffusion furnace by silicon chip and is carried out two-sided phosphorus source DIFFUSION TREATMENT, and film place is opened and front surface obtains n in base overleaf
+doped layer, its diffused sheet resistance is 40-90 Ω/;
Dielectric film in step (e) is that one or more of SiNx, SiOx, SiCx are laminated.
Etching solution described in step (g) is HF/HNO
3/ H
2o mixed liquor.
HF solution described in step (h), its concentration is 20%-30%, in HF solution, soaking is to be 10-50min the time.
The present invention is by the corrasion of etching liquid, by n higher doping content after Double side diffusion
+front-surface field etches into the doping content of optimizing, in etching process, and the n of base, the back side
+doped layer can not be subject to the impact of etching liquid because of the protection of dielectric film, thus the front and back n being optimized after etching
+doped layer, had both met the requirement of front-surface field to optical absorption and electric property, met again the requirement of base, the back side to contact resistance.
Beneficial effect: the present invention compared with prior art has the following advantages:
1, the present invention passes through n higher doping content after Double side diffusion
+front-surface field carries out etching, the n being optimized putting into etching solution
+front-surface field, has promoted n
+the inactivating performance of front-surface field, has increased the absorption of front surface to short wavelength light, thereby promotes battery open circuit voltage and short circuit current, reduces the lateral transport resistance of electronics;
2, the present invention passes through deposition medium film overleaf, makes the n of etching technics to cell backside base
+layer does not exert an influence, and has retained back side n
+the doping content of layer, thus be conducive to reduce the contact resistance of base, back side metal and silicon substrate, the performance of raising solar cell.
Accompanying drawing explanation
Fig. 1 is the front silicon chip front surface square resistance distribution map of etching in step of the present invention (g);
Fig. 2 is silicon chip front surface square resistance distribution map after the middle etching of step of the present invention (g).
Embodiment
Below in conjunction with specific embodiment, further illustrate the present invention, should understand these embodiment is only not used in and limits the scope of the invention for the present invention is described, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
A kind of back of the body knot-back of the body contact solar cell front-surface field preparation method, is characterized in that: comprise the following steps
(a) silicon chip is carried out to twin polishing, utilize the diffusion of boron source to obtain p to the silicon chip back side after polishing
+emitter, at the dielectric film of silicon chip back side deposition 80-200nm, described dielectric film is that one or more of SiNx, SiOx, SiCx are laminated;
(b) adopt laser ablation or wet-chemical chamber to remove the dielectric film of silicon chip back side local, must arrive base and open film figure;
(c) silicon chip is carried out to surface-texturing processing;
(d) silicon chip is put into diffusion furnace and carried out two-sided phosphorus source DIFFUSION TREATMENT, film place is opened and front surface obtains n in base overleaf
+doped layer, its diffused sheet resistance is 40-90 Ω/;
(e), at the dielectric film of silicon chip back side deposition 20-150nm, described dielectric film is that one or more of SiNx, SiOx, SiCx are laminated;
(f) remove silicon chip after step (d) step (e) is processed, the phosphorosilicate glass of its front-surface field;
(g) silicon chip is put into the HF/HNO that volume proportion is 1:300:30
3/ H
2in O mixed liquor etching 0.5-1min to front side of silicon wafer sheet resistance be 100-200 Ω/;
(h) silicon chip after etching being put into concentration is that the HF solution of 20%-30% soaks, and to remove the dielectric film of silicon chip back side, immersion is to be 10-50min the time;
(i) silicon chip is carried out to subsequent medium thin film deposition and metallization process;
Embodiment 1
Adopt the n type single crystal silicon sheet of 1 ~ 3.5 Ω cm, preparation back of the body knot-back of the body contact solar cell, obtains the n that doping content is suitable
+the step of front-surface field is as follows:
(a) silicon chip is carried out to twin polishing, utilize the diffusion of boron source to obtain p to the silicon chip back side after polishing
+emitter, diffused sheet resistance is 100 Ω/, utilizes the SiNx film that tubular type PECVD is 110nm in silicon chip back side deposition a layer thickness;
(b) utilize the SiNx film at the etching slurry etching silicon wafer back side, must arrive base and open film figure;
(c) silicon chip is carried out to surface-texturing processing;
(d) silicon chip being put into diffuse source is POCl
3diffusion furnace in carry out two-sided phosphorus source diffusion, film place is opened and front surface obtains n in base overleaf
+doped layer, its diffused sheet resistance is 50 Ω/;
(e) utilize the SiNx film that PECVD is 80nm at silicon chip back side deposit thickness;
(f) silicon chip being placed in to concentration is 10% HF solution, to remove silicon chip after step (d) step (e) is processed, the phosphorosilicate glass of its front surface;
(g) silicon chip is put into volume proportion be 1:300:30 HF/HNO3/H2O mixed liquor etching 1min to silicon chip front surface sheet resistance be 150 Ω/;
(h) silicon chip after etching being put into concentration is that 30% HF solution soaks 30min, to remove the SiNx film of silicon chip back side;
(i) silicon chip is carried out to subsequent medium thin film deposition and metallization process;
Adopt distribution that this technique obtains silicon chip front surface square resistance before and after etching as shown in Figure 1 and Figure 2, the average 56.1 Ωs/ of the square resistance of silicon chip front surface before etching becomes the 154.4 Ω/ after etching.
Claims (4)
1. back of the body knot-back of the body contact solar cell front-surface field preparation method, is characterized in that: comprise the following steps
(a) silicon chip is carried out to twin polishing, utilize the diffusion of boron source to obtain p to the silicon chip back side after polishing
+emitter, at the dielectric film of silicon chip back side deposition 80-200nm;
(b) by the method for laser ablation or corrosivity slurry etching, the deielectric-coating that silicon chip back side will be formed to N-shaped electrode local removes, and must arrive base and open film figure;
(c) silicon chip is carried out to double-sided texture processing;
(d) silicon chip is put into diffusion furnace and carried out two-sided phosphorus source DIFFUSION TREATMENT, film place is opened and front surface obtains n in base overleaf
+heavily doped layer;
(e) at the dielectric film of the whole area deposition 20-150nm of silicon chip back side;
(f) mode of employing single-sided corrosion, the PSG of removal silicon chip front surface;
(g) silicon chip is put into etching solution etching 0.5-1min to front side of silicon wafer sheet resistance be 100-200 Ω/;
(h) silicon chip after etching is put into certain density HF solution and soaked the dielectric film to remove silicon chip back side;
(i) silicon chip is carried out to subsequent medium thin film deposition and metallization process;
A kind of back of the body knot-back of the body contact solar cell front-surface field preparation method according to claim 1, is characterized in that: the dielectric film in step (a) is one or more stacked compositions of SiNx, SiOx, SiCx.
2. a kind of back of the body knot-back of the body contact solar cell front-surface field preparation method according to claim 1, is characterized in that: adopt being placed on of laser ablation or wet-chemical chamber to remove silicon chip back side local in step (b) and remove dielectric film.
3. a kind of back of the body knot-back of the body contact solar cell front-surface field preparation method according to claim 1, is characterized in that: step (d) is put into diffusion furnace by silicon chip and carried out two-sided phosphorus source DIFFUSION TREATMENT, and film place is opened and front surface obtains n in base overleaf
+heavily doped layer, its diffused sheet resistance is 40-90 Ω/;
A kind of back of the body knot-back of the body contact solar cell front-surface field preparation method according to claim 1, is characterized in that: the dielectric film in step (e) is one or more stacked compositions of SiNx, SiOx, SiCx.
4. a kind of back of the body knot-back of the body contact solar cell front-surface field preparation method according to claim 1, is characterized in that: the etching solution described in step (g) is HF/HNO
3/ H
2o mixed liquor;
A kind of back of the body knot-back of the body contact solar cell front-surface field preparation method according to claim 1, is characterized in that: the HF solution described in step (h), and its concentration is 20%-30%, in HF solution, soaking is to be 10-50min the time.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104218123A (en) * | 2014-09-05 | 2014-12-17 | 奥特斯维能源（太仓）有限公司 | N-type IBC silicon solar cell manufacturing method based on ion implantation process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101777603A (en) * | 2009-01-08 | 2010-07-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for manufacturing back contact solar energy batteries |
| WO2013074039A1 (en) * | 2011-11-16 | 2013-05-23 | Trina Solar Energy Development Pte Ltd | All-black-contact solar cell and fabrication method |
| CN103337561A (en) * | 2013-07-12 | 2013-10-02 | 苏州润阳光伏科技有限公司 | Fabrication method of surface fields of full-back-contact solar cell |
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- 2013-11-29 CN CN201310620944.4A patent/CN103794678A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101777603A (en) * | 2009-01-08 | 2010-07-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for manufacturing back contact solar energy batteries |
| WO2013074039A1 (en) * | 2011-11-16 | 2013-05-23 | Trina Solar Energy Development Pte Ltd | All-black-contact solar cell and fabrication method |
| CN103337561A (en) * | 2013-07-12 | 2013-10-02 | 苏州润阳光伏科技有限公司 | Fabrication method of surface fields of full-back-contact solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104218123A (en) * | 2014-09-05 | 2014-12-17 | 奥特斯维能源（太仓）有限公司 | N-type IBC silicon solar cell manufacturing method based on ion implantation process |
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Application publication date: 20140514 |