CN104505425A - Method for preparing solar monocrystal back polished cell piece - Google Patents
Method for preparing solar monocrystal back polished cell piece Download PDFInfo
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- CN104505425A CN104505425A CN201410572702.7A CN201410572702A CN104505425A CN 104505425 A CN104505425 A CN 104505425A CN 201410572702 A CN201410572702 A CN 201410572702A CN 104505425 A CN104505425 A CN 104505425A
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000005498 polishing Methods 0.000 claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 53
- 239000010703 silicon Substances 0.000 claims abstract description 53
- 238000009792 diffusion process Methods 0.000 claims abstract description 49
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 36
- 238000005516 engineering process Methods 0.000 claims abstract description 34
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 32
- 238000005554 pickling Methods 0.000 claims abstract description 10
- 238000005406 washing Methods 0.000 claims abstract description 10
- 230000005587 bubbling Effects 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 6
- 238000001035 drying Methods 0.000 claims abstract description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 6
- 238000007639 printing Methods 0.000 claims abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 4
- 230000003647 oxidation Effects 0.000 claims description 48
- 238000007254 oxidation reaction Methods 0.000 claims description 48
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 238000001816 cooling Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000003912 environmental pollution Methods 0.000 abstract description 4
- 239000004094 surface-active agent Substances 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000001039 wet etching Methods 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 11
- 238000002310 reflectometry Methods 0.000 description 11
- 238000001514 detection method Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000012530 fluid Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for preparing a solar monocrystal back polished cell piece. Through improving a diffusion technology, the method comprises: generating PSG in certain thickness and density on the surface of a monocrystalline silicon piece; in a wet etching groove, removing PSG and PN junctions on the back surface of the monocrystalline silicon piece by using HF and HNO3 solutions; in an ultrasonic cleaning bubbling groove, performing back polishing by using a sodium hydroxide solution which is in certain temperature and is added with water; then, performing HF acid pickling, washing, and drying on the back polished monocrystalline silicon piece; finally, using PECVD to deposit silicon nitride on the front surface of the monocrystalline silicon piece, and performing electrode printing and sintering. Beneficial effects of the method are that through improving the diffusion technology, thickness and consistency of a diffusion silicon piece PSG are increased, silicon piece sheet resistance uniformity is improved, a dead layer of the silicon piece is removed, and service life of the silicon piece is improved, the method does not need additional devices or reform an existing wet etching groove, and is simple and easy, a polishing solution is an aqueous alkali which does not contain an organic solution or added with a surface active agent, so the solution would not cause environmental pollution, and production cost is reduced.
Description
Technical field
The present invention relates to solar energy single crystal cell piece correlative technology field, refer in particular to a kind of method preparing solar energy single crystal back of the body polishing cell piece.
Background technology
The back of the body polishing technology of monocrystalline silicon piece can improve the optics benefit of solar silicon wafers, strengthen the photoelectric conversion efficiency of silicon chip back surface passivation effect, lifting solar cell, and can superpose with mainstream technologys such as SE, LBSF, PERL, MWT, compatible good, the solar cell properties adopting these technology can be improved further, advance the development of high efficiency solar cell industrialization.Monocrystalline silicon battery back surface polishing technology needs the growth requirement in conjunction with solar cell industry, makes it environmental protection more, and polishing chemicals use amount is low, and back of the body polishing effect more easily controls.
Current silicon solar cell industry uses thermal diffusion method to prepare PN junction usually, passes into a certain amount of oxygen and carry out pre-oxidation to control phosphorus diffusion velocity and sheet resistance uniformity before phosphorus diffusion; Passing into a certain amount of oxygen when logical phosphorus oxychloride makes silicon chip surface form one deck phosphorosilicate glass (PSG) to impel POCl
3abundant decomposition and avoid PCl
5to the corrosion of silicon chip surface.
In the prior art, the back of the body finishing method of monocrystalline silicon be by making herbs into wool after the monocrystalline silicon piece back side be placed in polishing fluid, front is placed in outside polishing fluid carries out the polishing of the chemistry back of the body.The method needs extra increase equipment or transforms existing wet method etching groove, and the cost original line being improved to coupling is high, and polishing fluid adopts organic solution or is added with the aqueous slkali of surfactant, causes environmental pollution, and adds production cost.
Summary of the invention
There is above-mentioned deficiency to overcome in prior art in the present invention, provides a kind of method preparing solar energy single crystal back of the body polishing cell piece that simple and cost is low.
To achieve these goals, the present invention is by the following technical solutions:
A kind of method preparing solar energy single crystal back of the body polishing cell piece, by improving diffusion technology parameter, generating the PSG of certain thickness and density at monocrystalline silicon sheet surface, and then back of the body polishing is carried out to solar monocrystalline silicon slice, finally make solar battery sheet, concrete operation step is as follows:
(1) monocrystalline silicon piece after cleaning and texturing, uses tubular diffusion furnace to spread, improves pre-oxidation and pre-deposition technique in conventional phosphoric diffusion technology, and increases High temperature diffusion propelling oxidation technology and cooling oxidation technology;
(2), after carrying out making herbs into wool diffusion to monocrystalline silicon piece, in wet method etching groove, etching removes PSG and the PN junction at the back side;
(3) in ultrasonic cleaning bubbling groove, back of the body polishing is carried out with the sodium hydroxide solution being added with absolute ethyl alcohol with uniform temperature;
(4) pickling, washing and drying are carried out to the monocrystalline silicon piece HF after back of the body polishing;
(5) use PECVD at monocrystalline silicon piece front deposited silicon nitride, go forward side by side column electrode printing and sintering.
The method by improving pre-oxidation and pre-deposition technique in conventional phosphoric diffusion technology, increase High temperature diffusion and advance oxidation technology and cooling oxidation technology, add PSG thickness and the density of diffusion silicon chip, improve the uniformity of silicon chip sheet resistance, and effectively can remove dead layer, improve minority carrier life time, make diffusion silicon chip be applicable to prepare solar energy single crystal back of the body polishing cell piece.Sodium hydroxide solution has very strong corrosivity to silicon at a certain temperature, and is far smaller than silicon to the corrosivity of PSG, therefore make use of this corrosive differentially protected front side of silicon wafer matte and PN junction when carrying on the back polishing.In the process removing silicon chip back side PSG and PN junction, rough polishing is carried out to silicon chip back side simultaneously, decreased the nucleating factor easily forming matte.When sodium hydroxide solution reaches certain concentration, it diminishes to the anisotropy factor of monocrystalline silicon, can reach the effect of polishing.Add absolute ethyl alcohol and adopt Ultrasonic Cleaning bubbling groove can assist the release of bubble hydrogen, avoiding silicon chip surface due to the attached spot causing outward appearance of note of bubble hydrogen.The method does not need additionally to increase equipment or transform existing wet method etching groove, and polishing fluid does not adopt organic solution or is added with the aqueous slkali of surfactant, can not cause environmental pollution, and reduces production cost.
As preferably, in step (1), pre-oxidation and pre-deposition technique are, at a certain temperature, first silicon chip is carried out to the pre-oxidation of certain hour, the oxygen volume content passed into during pre-oxidation is 30%-40%, then carries out the pre-deposition of certain hour, the diffusion nitrogen volume content passed into during pre-deposition is 8%-11%, and oxygen volume content is 8%-13%.Increase oxygen flow during pre-oxidation, make the oxide layer of silicon chip surface closeer thicker, the infiltration of the phosphorus that slows down, improve minority carrier life time.
As preferably, in step (1), High temperature diffusion advances oxidation technology to be warmed up to uniform temperature and carry out High temperature diffusion propelling oxidation to silicon chip, pass into a certain amount of oxygen when High temperature diffusion advances, the oxygen volume content passed into when High temperature diffusion advances is 10%-30%.Pass into a certain amount of oxygen when High temperature diffusion advances, both can make remaining POCl
3abundant decomposition, can make again PSG finer and close, reduces the impact on front side of silicon wafer when carrying on the back polishing.
As preferably, in step (1), cooling oxidation technology is, cool to uniform temperature and carry out cooling oxidation to silicon chip, pass into a certain amount of oxygen when lowering the temperature, the oxygen volume content passed into during cooling is 10%-30%.Passing into a certain amount of oxygen when lowering the temperature, the fire damage that diffusion itself brings silicon chip can be reduced, make sheet resistance more even.
As preferably, pre-oxidation and pre-deposition technique are, at the temperature of 800-830 DEG C, first silicon chip are carried out to the pre-oxidation of 10-15min, then carry out the pre-deposition of 8-12min.
As preferably, High temperature diffusion advances oxidation technology to be, be warmed up to 850-870 DEG C and carry out High temperature diffusion to silicon chip and advance oxidation, wherein the intensification propelling time is 5-9min, and constant temperature advances the time to be 4-10min.
As preferably, cooling oxidation technology is, cool to 800-810 DEG C and carry out cooling to silicon chip and be oxidized, temperature fall time is 9-15min.
As preferably, in step (1), after pre-oxidation and pre-deposition technique, increase High temperature diffusion advance oxidation technology and cooling oxidation technology, the silicon chip psg film of gained is thick is 30-70nm.Concept Control psg film of the present invention is thick is 30-70nm, if psg film is too thin when the polishing of the silicon chip back of the body, sodium hydroxide solution can corrode and penetrates matte and the PN junction that PSG layer affect front, the light trapping structure of destruction matte; The too thick meeting of psg film causes most of phosphorus doping less than inside silicon chip, and PN junction is too dark, and sheet resistance does not reach production requirement.
As preferably, in step (2), with HF and HNO in wet method etching groove
3solution removal its back side PSG and PN junction.
As preferably, in step (3), the concentration of NaOH is 100g/L-160g/L, and temperature is 60 DEG C-75 DEG C, and the concentration of absolute ethyl alcohol is 5mL/L-15mL/L, and the polishing time is 120s-600s.Concentration and the polish temperature of adjustment NaOH can reach best polishing effect.
The invention has the beneficial effects as follows: by improving pre-oxidation and pre-deposition technique in conventional phosphoric diffusion technology, increase High temperature diffusion and advance oxidation technology and cooling oxidation technology, add PSG thickness and the density of diffusion silicon chip, improve silicon chip sheet resistance uniformity, and can effectively remove silicon chip dead layer, improve silicon chip minority carrier life, make diffusion silicon chip be applicable to prepare solar energy single crystal back of the body polishing cell piece; Do not need additionally to increase equipment or transform existing wet method etching groove, simple, and polishing fluid does not adopt organic solution or is added with the aqueous slkali of surfactant, can not cause environmental pollution, and reduce production cost.
Embodiment
Below in conjunction with embodiment, the present invention will be further described.
200 156 type monocrystalline silicon pieces after cleaning and texturing, use tubular diffusion furnace to spread.At the temperature of 820 DEG C, first silicon chip is carried out to the pre-oxidation of 10min, oxygen volume ratio is 30%, then carries out the pre-deposition of 10min, and diffusion nitrogen volume ratio is 10%, and oxygen volume ratio is 10%.Be warmed up to 855 DEG C and carry out High temperature diffusion propelling oxidation, the oxygen volume ratio passed into is 10%, and wherein the intensification propelling time is 9 minutes, and constant temperature advances the time to be 5 minutes.Finally cool to 800 DEG C and carry out cooling oxidation, the oxygen volume ratio passed into is 26%, and temperature fall time is 15 minutes.Silicon chip after diffusion divides 4 groups of experiments carrying out follow-up back of the body polishing.
Embodiment 1
A () carries out making herbs into wool diffusion to 50 156 type monocrystalline silicon pieces after, with HF and HNO in wet method etching groove
3the PSG at the solution etches removing back side and PN junction;
B () immerses temperature is 65 DEG C, is added with in the 160g/L sodium hydroxide solution of 7mL/L absolute ethyl alcohol, bubbling ultrasonic polishing 120s;
C () carries out pickling, washing and drying to the monocrystalline silicon piece HF after back of the body polishing;
D () uses PECVD at monocrystalline silicon piece front deposited silicon nitride, go forward side by side column electrode printing and sintering, complete the production of whole battery.
Wherein the silicon chip after back of the body polishing is carried out to the detection of back surface reflectivity, the silicon chip after pickling washing is carried out to the detection of front surface reflectivity, resultant battery is carried out to the detection of electric property.
Embodiment 2
A () carries out making herbs into wool diffusion to 50 156 type monocrystalline silicon pieces after, with HF and HNO in wet method etching groove
3the PSG at the solution etches removing back side and PN junction;
B () immerses temperature is 75 DEG C, is added with in the 120g/L sodium hydroxide solution of 7mL/L absolute ethyl alcohol, bubbling ultrasonic polishing 180s;
C () carries out pickling, washing and drying to the monocrystalline silicon piece HF after back of the body polishing;
D () uses PECVD at monocrystalline silicon piece front deposited silicon nitride, go forward side by side column electrode printing and sintering, complete the production of whole battery.
Wherein the silicon chip after back of the body polishing is carried out to the detection of back surface reflectivity, the silicon chip after pickling washing is carried out to the detection of front surface reflectivity, resultant battery is carried out to the detection of electric property.
Embodiment 3
A () carries out making herbs into wool diffusion to 50 156 type monocrystalline silicon pieces after, with HF and HNO in wet method etching groove
3the PSG at the solution etches removing back side and PN junction;
B () immerses temperature is 60 DEG C, is added with in the 100g/L sodium hydroxide solution of 7mL/L absolute ethyl alcohol, bubbling ultrasonic polishing 600s;
C () carries out pickling, washing and drying to the monocrystalline silicon piece HF after back of the body polishing;
D () uses PECVD at monocrystalline silicon piece front deposited silicon nitride, go forward side by side column electrode printing and sintering, complete the production of whole battery.
Wherein the silicon chip after back of the body polishing is carried out to the detection of back surface reflectivity, the silicon chip after pickling washing is carried out to the detection of front surface reflectivity, resultant battery is carried out to the detection of electric property.
Comparative example
The difference of comparative example and embodiment 1-3 is do not have step (b) in comparative example, does not namely carry out back of the body polishing.
The average electricity performance test results of embodiment 1-3 and comparative example resultant battery is as shown in table 1, wherein Uoc is the open circuit voltage of resultant battery, Isc is the short circuit current of resultant battery, and FF is the fill factor, curve factor of resultant battery, and Eff is the photoelectric conversion efficiency of resultant battery.After washing with the back surface reflectivity of comparative example and pickling after embodiment 1-3 carries on the back polishing, front surface reflectivity testing result is as shown in table 2.
Table 1
| Uoc(mV) | Isc(A) | FF(％) | Eff(％) | |
| Embodiment 1 | 0.6411 | 9.008 | 79.88 | 19.31 |
| Embodiment 2 | 0.6418 | 9.032 | 79.81 | 19.36 |
| Embodiment 3 | 0.6415 | 9.037 | 79.91 | 19.39 |
| Comparative example | 0.6403 | 9.021 | 79.69 | 19.26 |
Table 2
| Back surface reflectivity | Front surface reflectivity | |
| Embodiment 1 | 42.8％ | 12.1％ |
| Embodiment 2 | 44.5％ | 11.2％ |
| Embodiment 3 | 45.7％ | 11.8％ |
| Comparative example | 27.4％ | 11.2％ |
As can be seen from the data of table 1 and table 2, compared with not carrying out back of the body polishing with comparative example, implement to carry on the back front matte and the PN junction that polishing does not affect silicon chip by this method.Embodiment 1 to 3 is owing to having carried out back of the body polishing to silicon chip, improve back surface reflectivity, add the reflection of solar spectrum medium-long wave band spectrum at monocrystalline silicon back surface, eliminate silicon chip back side impurity and damage layer further, reduce compound, open circuit voltage, fill factor, curve factor and photoelectric conversion efficiency are all increased.
Claims (10)
1. prepare the method for solar energy single crystal back of the body polishing cell piece for one kind, it is characterized in that, by improving diffusion technology parameter, the PSG of certain thickness and density is generated at monocrystalline silicon sheet surface, and then back of the body polishing is carried out to solar monocrystalline silicon slice, finally make solar battery sheet, concrete operation step is as follows:
(1) monocrystalline silicon piece after cleaning and texturing, uses tubular diffusion furnace to spread, improves pre-oxidation and pre-deposition technique in conventional phosphoric diffusion technology, and increases High temperature diffusion propelling oxidation technology and cooling oxidation technology;
(2), after carrying out making herbs into wool diffusion to monocrystalline silicon piece, in wet method etching groove, etching removes PSG and the PN junction at the back side;
(3) in ultrasonic cleaning bubbling groove, back of the body polishing is carried out with the sodium hydroxide solution being added with absolute ethyl alcohol with uniform temperature;
(4) pickling, washing and drying are carried out to the monocrystalline silicon piece HF after back of the body polishing;
(5) use PECVD at monocrystalline silicon piece front deposited silicon nitride, go forward side by side column electrode printing and sintering.
2. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 1, it is characterized in that, in step (1), pre-oxidation and pre-deposition technique are at a certain temperature, first silicon chip is carried out to the pre-oxidation of certain hour, the oxygen volume content passed into during pre-oxidation is 30%-40%, then carry out the pre-deposition of certain hour, the diffusion nitrogen volume content passed into during pre-deposition is 8%-11%, and oxygen volume content is 8%-13%.
3. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 1, it is characterized in that, in step (1), High temperature diffusion propelling oxidation technology is, be warmed up to uniform temperature and High temperature diffusion propelling oxidation is carried out to silicon chip, pass into a certain amount of oxygen when High temperature diffusion advances, the oxygen volume content passed into when High temperature diffusion advances is 10%-30%.
4. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 1, it is characterized in that, in step (1), cooling oxidation technology is, cool to uniform temperature and cooling oxidation is carried out to silicon chip, pass into a certain amount of oxygen when lowering the temperature, the oxygen volume content passed into during cooling is 10%-30%.
5. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 2, it is characterized in that, pre-oxidation and pre-deposition technique are, at the temperature of 800-830 DEG C, first silicon chip is carried out to the pre-oxidation of 10-15min, then carry out the pre-deposition of 8-12min.
6. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 3, it is characterized in that, High temperature diffusion propelling oxidation technology is, be warmed up to 850-870 DEG C and High temperature diffusion propelling oxidation is carried out to silicon chip, wherein the intensification propelling time is 5-9min, and constant temperature advances the time to be 4-10min.
7. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 4, it is characterized in that, cooling oxidation technology is, cool to 800-810 DEG C and carry out cooling oxidation to silicon chip, temperature fall time is 9-15min.
8. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 1 or 2 or 3 or 4 or 5 or 6 or 7, it is characterized in that, in step (1), after pre-oxidation and pre-deposition technique, increase High temperature diffusion advance oxidation technology and cooling oxidation technology, the silicon chip psg film of gained is thick is 30-70nm.
9. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 1, is characterized in that, in step (2), with HF and HNO in wet method etching groove
3solution removal its back side PSG and PN junction.
10. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 1, it is characterized in that, in step (3), the concentration of NaOH is 100g/L-160g/L, temperature is 60 DEG C-75 DEG C, the concentration of absolute ethyl alcohol is 5mL/L-15mL/L, and the polishing time is 120s-600s.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119338A (en) * | 2018-08-06 | 2019-01-01 | 横店集团东磁股份有限公司 | A kind of highback polishing and efficient single crystal process |
| CN109888062A (en) * | 2019-03-29 | 2019-06-14 | 江苏日托光伏科技股份有限公司 | A kind of MWT solar battery laser SE+ alkali polishing diffusion technique |
| CN110518088A (en) * | 2019-07-18 | 2019-11-29 | 天津爱旭太阳能科技有限公司 | A kind of preparation method of SE solar battery |
| CN110534408A (en) * | 2019-07-30 | 2019-12-03 | 苏州昊建自动化系统有限公司 | A kind of crystal-silicon battery slice chain type alkali polishing production line and chain type alkali polishing method |
| CN111129171A (en) * | 2019-12-31 | 2020-05-08 | 横店集团东磁股份有限公司 | Covering film for alkali polishing and preparation method thereof |
| CN111627804A (en) * | 2020-04-14 | 2020-09-04 | 天津爱旭太阳能科技有限公司 | Solar cell single-side polishing process utilizing mask protection |
| CN113690342A (en) * | 2021-08-11 | 2021-11-23 | 浙江中晶新能源股份有限公司 | Chain type back polishing equipment for polycrystalline silicon battery piece |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840961A (en) * | 2010-03-31 | 2010-09-22 | 晶澳(扬州)太阳能光伏工程有限公司 | Industrialized production process of crystalline silicon solar battery |
| CN103715303A (en) * | 2013-12-24 | 2014-04-09 | 衡水英利新能源有限公司 | Diffusion method for improving solar cell filling |
| US8852690B2 (en) * | 2004-06-15 | 2014-10-07 | Braggone Oy | Method of synthesizing hybrid metal oxide materials and applications thereof |
-
2014
- 2014-10-24 CN CN201410572702.7A patent/CN104505425B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8852690B2 (en) * | 2004-06-15 | 2014-10-07 | Braggone Oy | Method of synthesizing hybrid metal oxide materials and applications thereof |
| CN101840961A (en) * | 2010-03-31 | 2010-09-22 | 晶澳(扬州)太阳能光伏工程有限公司 | Industrialized production process of crystalline silicon solar battery |
| CN103715303A (en) * | 2013-12-24 | 2014-04-09 | 衡水英利新能源有限公司 | Diffusion method for improving solar cell filling |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119338A (en) * | 2018-08-06 | 2019-01-01 | 横店集团东磁股份有限公司 | A kind of highback polishing and efficient single crystal process |
| CN109888062A (en) * | 2019-03-29 | 2019-06-14 | 江苏日托光伏科技股份有限公司 | A kind of MWT solar battery laser SE+ alkali polishing diffusion technique |
| CN109888062B (en) * | 2019-03-29 | 2021-03-30 | 江苏日托光伏科技股份有限公司 | MWT solar cell laser SE + alkali polishing diffusion process |
| CN110518088A (en) * | 2019-07-18 | 2019-11-29 | 天津爱旭太阳能科技有限公司 | A kind of preparation method of SE solar battery |
| CN110518088B (en) * | 2019-07-18 | 2022-04-12 | 天津爱旭太阳能科技有限公司 | Preparation method of SE solar cell |
| CN110534408A (en) * | 2019-07-30 | 2019-12-03 | 苏州昊建自动化系统有限公司 | A kind of crystal-silicon battery slice chain type alkali polishing production line and chain type alkali polishing method |
| CN111129171A (en) * | 2019-12-31 | 2020-05-08 | 横店集团东磁股份有限公司 | Covering film for alkali polishing and preparation method thereof |
| CN111129171B (en) * | 2019-12-31 | 2022-03-04 | 横店集团东磁股份有限公司 | Covering film for alkali polishing and preparation method thereof |
| CN111627804A (en) * | 2020-04-14 | 2020-09-04 | 天津爱旭太阳能科技有限公司 | Solar cell single-side polishing process utilizing mask protection |
| CN113690342A (en) * | 2021-08-11 | 2021-11-23 | 浙江中晶新能源股份有限公司 | Chain type back polishing equipment for polycrystalline silicon battery piece |
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