CN105696083B - A kind of preparation method of solar battery pile face - Google Patents

A kind of preparation method of solar battery pile face Download PDF

Info

Publication number
CN105696083B
CN105696083B CN201610066750.8A CN201610066750A CN105696083B CN 105696083 B CN105696083 B CN 105696083B CN 201610066750 A CN201610066750 A CN 201610066750A CN 105696083 B CN105696083 B CN 105696083B
Authority
CN
China
Prior art keywords
silicon chip
preparation
mixed liquor
solar battery
battery pile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610066750.8A
Other languages
Chinese (zh)
Other versions
CN105696083A (en
Inventor
周军
晏文春
党继东
刘东续
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Funing atlas sunshine Power Technology Co., Ltd
Original Assignee
CSI GCL Solar Manufacturing Yancheng Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSI GCL Solar Manufacturing Yancheng Co Ltd filed Critical CSI GCL Solar Manufacturing Yancheng Co Ltd
Priority to CN201610066750.8A priority Critical patent/CN105696083B/en
Publication of CN105696083A publication Critical patent/CN105696083A/en
Application granted granted Critical
Publication of CN105696083B publication Critical patent/CN105696083B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Photovoltaic Devices (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

The invention discloses a kind of preparation method of solar battery pile face, comprise the following steps:(1) configuration corrosion mixed liquor:By volume by HNO3:HF:Deionized water=4:1:2.5~5:1:2.5 are mixed to get corrosion mixed liquor;(2) pending silicon chip is immersed in above-mentioned corrosion mixed liquor, and the spacing between the upper surface of silicon chip and corrosion mixed liquor liquid level is controlled in 5 ~ 10 mm;After corroding under negative pressure exhausting environment, you can suede structure is made on the lower surface of silicon chip;The pressure of the negative pressure exhausting environment is 50 ~ 100Pa.The present invention can realize polishing effect while the one side of silicon chip forms suede structure in another side.

Description

A kind of preparation method of solar battery pile face
Technical field
The present invention relates to a kind of preparation method of solar battery pile face, belong to technical field of solar batteries.
Background technology
Conventional fossil fuel is increasingly depleted, and in existing sustainable energy, solar energy is undoubtedly a kind of most clear Clean, most universal and most potential alternative energy source.Device of solar generating is also known as solar cell or photovoltaic cell, can incite somebody to action Solar energy is directly changed into electric energy, and its electricity generating principle is the photovoltaic effect based on semiconductor PN.
In the fabrication of a solar cell, generally using acid solution or aqueous slkali to crystalline silicon in crystal orientation it is each to Anisotropic etch characteristic, the matte similar to " inverted pyramid " structure is formed in silicon chip surface, by increasing irradiation light in silicon chip table The order of reflection in face, the absorptivity of light is improved, so as to improve the conversion efficiency of monocrystaline silicon solar cell.
On the other hand, with the development of science and technology, there is localized contact back of the body passivation(PERC)Solar cell, this is newly to open A kind of high performance solar batteries issued, have obtained the extensive concern of industry.Its core is the shady face oxidation in silicon chip (5 ~ 100 nanometers) coverings of aluminium or silicon oxide film, to play passivated surface, improve the effect of long-wave response, so as to lift electricity The conversion efficiency in pond.But aluminum oxide or silica are non-conductive, it is therefore desirable to the film local openings, in order to aluminium gold Category contacts with silicon chip back surface, collected current.In addition, aluminum metal (being typically aluminium paste), in high-temperature sintering process, can destroy oxygen Change the passivation of aluminium or silica, therefore generally to cover silicon nitride film again on aluminum oxide or silicon oxide film, Play a protective role.The preparation method of existing PERC solar cells mainly comprises the following steps:Making herbs into wool, diffusion, the back of the body polishing, Etching and decontamination glass, backside deposition aluminum oxide or silicon oxide film, deposited silicon nitride diaphragm, front deposited silicon nitride subtract Reflecting layer, back side local openings, the positive back metal slurry of silk-screen printing, sintering, you can obtain solar cell.
Therefore, it is necessary to carry out single-sided polishing to cell backside in the preparation process of PERC back of the body passivation cells.In order to In the polishing effect that crystal silicon solar battery back face has obtained, to reach preferably back of the body passivation effect, and increase long wave rings Should, people have attempted many methods, and conventional method includes the polishing of chemical mask corrosion, physical grinding polishing etc..Wherein, it is chemical Mask corrosion polishing method includes alkali polishing and acid polishing, can obtain preferable polishing effect, but this method technique is more Complexity, cost is higher, so in the industrial production using less.For physical grinding polishing processes, its disadvantage is meeting pair Cell piece surface produces more serious damage, it is impossible to is efficiently used for producing.
Therefore, a kind of new polishing method is developed, can realize cost-effective, and can realizes volume production, is still current sheet One of research and development method of art personnel.
The content of the invention
The goal of the invention of the present invention is to provide a kind of preparation method of solar battery pile face.
To achieve the above object of the invention, the technical solution adopted by the present invention is:A kind of preparation side of solar battery pile face Method, comprise the following steps:
(1) configuration corrosion mixed liquor:By volume by HNO3:HF:Deionized water=4:1:2.5~5:1:2.5 it is mixed to get Corrode mixed liquor;
(2) pending silicon chip is immersed in above-mentioned corrosion mixed liquor, and makes upper surface and the corrosion mixed liquor liquid of silicon chip Spacing between face is controlled in 5 ~ 10 mm;
After corroding under negative pressure exhausting environment, you can suede structure is made on the lower surface of silicon chip;
The pressure of the negative pressure exhausting environment is -50 ~ -100Pa.
Above, corrosion mixed liquor can be mixed in the making herbs into wool Tank grooves of chain type texturing machine, then will corrodes mixed liquor With circular flow(100~180L/min)Get in making herbs into wool Bath grooves, and ensure the liquid level in Bath grooves and silicon chip difference in height 5 ~ 10mm。
In above-mentioned technical proposal, after corroding 1.5 ~ 2.5min under negative pressure exhausting environment in the step (2), continue through Suede structure is can obtain after cleaning, drying.
In above-mentioned technical proposal, in the step (2), while suede structure is made on the lower surface of silicon chip, in silicon The upper surface of piece forms single-sided polishing.
Preferably, the solar cell is PERC solar cells.
Preferably, the pressure of the negative pressure exhausting environment is -60 ~ -80Pa.
The mechanism of the present invention is as follows:In HNO3On the basis of-HF system making herbs into wool, appropriate solution ratio is selected, it is ensured that following table Face corrosion is in isotropism unification;Then the distance for adjusting upper surface and liquid level reaches 5 ~ 10mm, during the course of the reaction it is anti- The gas NOx answered, in appropriate exhausting environment(-50~-100Pa)In, a part is pumped, and a part can be redissolved in liquid Generate HNO2Oxidation reaction is continued to participate in, when silicon chip upper surface and liquid level are closer to the distance, corrosive liquid that upper surface is contacted Concentration can be much larger than lower surface, and lateral encroaching speed is much larger than longitudinal corrosion rate in the corrosive liquid that is contacted of upper surface, from And reach polishing effect in silicon chip upper surface, while form suede structure in silicon chip lower surface;So as to realize matte and polishing one Step is completed;In addition, the matte is more smooth, PERC back of the body passivation technologies are more beneficial for, increase long-wave response, so as to effectively improve electricity Pond piece transformation efficiency.
Because above-mentioned technical proposal is used, the present invention has following advantages compared with prior art:
1st, the present invention develops a kind of preparation method of solar battery pile face, can form matte knot in the one side of silicon chip Polishing effect is realized in another side while structure, experiment proves:The solar cell surface obtained using the method for the present invention Reflectivity improves 5 ~ 6% compared with prior art, achieves significant polishing effect;
2nd, preparation method of the invention is simple and easy, and without mask, cost is relatively low, suitable for popularization and application.
Brief description of the drawings
Fig. 1 is the schematic diagram after the making herbs into wool of silicon chip lower surface in the embodiment of the present invention one.
Fig. 2 is the schematic diagram after silicon chip upper table mirror polish in the embodiment of the present invention one.
Embodiment
The present invention is further described with reference to embodiment.
Embodiment one:
Referring to shown in Fig. 1 ~ 2, a kind of preparation method of solar battery pile face, comprise the following steps:
(1) it is HNO chain equipment texturing slot to be made into concentration3:HF:Deionized water=4:1:2.5(Volume ratio)Corrosion is mixed Close liquid;
(2) the corrosion mixed liquor for obtaining step (1) is with circular flow(100~180L/min)Get to making herbs into wool Bath grooves In;
By pending silicon chip(Using the polycrystalline P156 silicon chips of conventional identical crystal orientation)Immerse in above-mentioned corrosion mixed liquor, adjust Whole Bath grooves both sides overflow baffle, it is ensured that the difference in height of liquid level and silicon chip upper surface in Bath grooves is in 5 ~ 10mm;
(3) between the exhausting in Bath grooves being adjusted into -50 ~ -100Pa, 1.5 ~ 2.5min is corroded, by the silicon after corrosion Piece passes through a series of cleaning and drying, you can suede structure is made on the lower surface of silicon chip, while in the upper surface of silicon chip Form single-sided polishing.
By silicon chip upper surface obtained above(That is the shady face of cell piece)It is measured by D8 reflectance test instrument, 3 Point Weighted Average Method, it is as a result as follows:
Sampling Center Corner 1 Corner 2 Average value
1 31.80% 31.10% 32.10% 31.67%
2 31.50% 31.90% 32.00% 31.80%
3 31.90% 31.40% 32.40% 31.90%
It is average 31.73% 31.47% 32.17% 31.79%
By silicon chip lower surface obtained above(That is the smooth surface of cell piece)It is measured by D8 reflectance test instrument, 3 Point Weighted Average Method, it is as a result as follows:
Sampling Center Corner 1 Corner 2 Average value
1 24.50% 24.10% 25.10% 24.57%
2 24.50% 24.90% 24.00% 24.47%
3 24.30% 24.40% 25.00% 24.57%
It is average 24.43% 24.47% 24.70% 24.53%
Referring to shown in attached Fig. 1 and 2, as seen from the figure, the upper surface of silicon chip forms polishing effect.
Comparative example one
A kind of preparation method of crystal silicon solar energy battery single-sided polishing, comprises the following steps:
(1) it is HNO chain equipment texturing slot to be made into concentration3:HF:Deionized water=3.5:1:2.5(Volume ratio)Corrosion Mixed liquor;
(2) the corrosion mixed liquor for obtaining step (1) is with circular flow(100~180L/min)Get to making herbs into wool Bath grooves In;
By pending silicon chip(Using with embodiment identical polycrystalline P156 silicon chips)Immerse in above-mentioned corrosion mixed liquor, adjust Whole Bath grooves both sides overflow baffle, it is ensured that the difference in height of liquid level and silicon chip upper surface in Bath grooves is in 20 mm;
(3) exhausting in Bath grooves is adjusted to -200Pa or so, corrodes 1.5 ~ 2.5min, the silicon chip after corrosion is passed through Cross a series of cleaning and drying, you can suede structure is made on the lower surface of silicon chip.
Silicon chip upper surface obtained above is measured by D8 reflectance test instrument, 3 Weighted Average Methods, tied Fruit is as follows:
Sampling Center Corner 1 Corner 2 Average value
1 26.20% 25.70% 25.10% 25.67%
2 25.50% 25.10% 25.30% 25.30%
3 25.30% 25.40% 25.10% 25.27%
It is average 25.67% 25.40% 25.17% 25.41%
By silicon chip lower surface obtained above(Smooth surface)It is measured by D8 reflectance test instrument, 3 weighted averages Reflectivity, it is as a result as follows:
Sampling Center Corner 1 Corner 2 Average value
1 24.70% 23.70% 24.10% 24.17%
2 25.20% 24.40% 24.30% 24.63%
3 24.30% 23.80% 24.10% 24.07%
It is average 24.73% 23.97% 24.17% 24.29%
Embodiment upper surface reflectivity, which is can be seen that, from above-described embodiment and comparative example reaches 31.79%, and traditional making herbs into wool Upper surface reflectivity afterwards only has 25.41%, and the reflectivity of embodiment is apparently higher than comparative example.In addition, after measured, embodiment Short circuit current is higher by 0.3 mA/cm compared with the short circuit current of comparative example3, the open-circuit voltage of embodiment is high compared with the open-circuit voltage of comparative example Go out 2mV, the transformation efficiency of embodiment is higher by 0.1 ~ 0.3% for the transformation efficiency than comparative example.
As can be seen here, technique of the invention can greatly improve silicon chip back surface reflectivity, make the back side more smooth, back surface field Contact is more abundant, improves back surface field passivation effect to a certain degree, and adds long-wave response, also improves battery to a certain degree Transformation efficiency.

Claims (5)

1. a kind of preparation method of solar battery pile face, it is characterised in that comprise the following steps:
(1) configuration corrosion mixed liquor:By volume by HNO3:HF:Deionized water=4:1:2.5~5:1:2.5 are mixed to get corrosion Mixed liquor;
(2) pending silicon chip is immersed in above-mentioned corrosion mixed liquor, and make silicon chip upper surface and corrosion mixed liquor liquid level it Between spacing control in 5 ~ 10 mm;
After corroding under negative pressure exhausting environment, you can suede structure is made on the lower surface of silicon chip;
The pressure of the negative pressure exhausting environment is -50 ~ -100Pa.
2. the preparation method of solar battery pile face according to claim 1, it is characterised in that:In the step (2) After corroding 1.5 ~ 2.5min under negative pressure exhausting environment, suede structure is can obtain after continuing through cleaning, drying.
3. the preparation method of solar battery pile face according to claim 1, it is characterised in that:In the step (2), While suede structure is made on the lower surface of silicon chip, single-sided polishing is formed in the upper surface of silicon chip.
4. the preparation method of solar battery pile face according to claim 1, it is characterised in that:The solar cell is PERC solar cells.
5. the preparation method of solar battery pile face according to claim 1, it is characterised in that:The negative pressure exhausting environment Pressure be -60 ~ -80Pa.
CN201610066750.8A 2016-01-29 2016-01-29 A kind of preparation method of solar battery pile face Active CN105696083B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610066750.8A CN105696083B (en) 2016-01-29 2016-01-29 A kind of preparation method of solar battery pile face

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610066750.8A CN105696083B (en) 2016-01-29 2016-01-29 A kind of preparation method of solar battery pile face

Publications (2)

Publication Number Publication Date
CN105696083A CN105696083A (en) 2016-06-22
CN105696083B true CN105696083B (en) 2018-03-09

Family

ID=56228970

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610066750.8A Active CN105696083B (en) 2016-01-29 2016-01-29 A kind of preparation method of solar battery pile face

Country Status (1)

Country Link
CN (1) CN105696083B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109360870B (en) * 2018-11-23 2020-07-31 浙江昱辉阳光能源江苏有限公司 Low-cost solar cell back polishing process
CN111261496B (en) * 2018-11-30 2022-10-14 有研半导体硅材料股份公司 Acid corrosion processing method of large-diameter substrate wafer suitable for single-side polishing
CN110034211B (en) * 2019-04-23 2021-03-12 苏州阿特斯阳光电力科技有限公司 Method for reducing consumption of chain type texturing chemicals

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03272141A (en) * 1990-03-22 1991-12-03 Fujitsu Ltd Etching device for semiconductor substrate
CN101983415A (en) * 2007-12-19 2011-03-02 吉布尔.施密德有限责任公司 Method and device for treating silicon wafers
CN102181935A (en) * 2010-10-26 2011-09-14 江阴浚鑫科技有限公司 Method and corrosive liquid for making texture surface of monocrystalline silicon
CN102851743A (en) * 2012-09-05 2013-01-02 浙江鸿禧光伏科技股份有限公司 Method for reducing surface reflectivity during polycrystalline silicon texturing
CN103346204A (en) * 2013-06-07 2013-10-09 中利腾晖光伏科技有限公司 Polycrystalline chained multi-step texturing technology
CN203325843U (en) * 2013-07-02 2013-12-04 苏州阿特斯阳光电力科技有限公司 Fabric-surface manufacturing device for solar battery
CN103603055A (en) * 2013-11-25 2014-02-26 英利能源(中国)有限公司 Polishing method of monocrystalline silicon wafer, solar cell and manufacturing method thereof
CN103872183A (en) * 2014-04-03 2014-06-18 苏州阿特斯阳光电力科技有限公司 Single face polishing method
CN104201252A (en) * 2014-09-22 2014-12-10 苏州阿特斯阳光电力科技有限公司 PERC (passivated emitter and locally diffused rear contact) solar cell preparation method
CN104505438A (en) * 2015-01-05 2015-04-08 无锡德鑫太阳能电力有限公司 Solar battery cell preparation system
CN104966762A (en) * 2015-07-09 2015-10-07 苏州阿特斯阳光电力科技有限公司 Preparation method of texturized surface structure of crystalline silicon solar cell

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03272141A (en) * 1990-03-22 1991-12-03 Fujitsu Ltd Etching device for semiconductor substrate
CN101983415A (en) * 2007-12-19 2011-03-02 吉布尔.施密德有限责任公司 Method and device for treating silicon wafers
CN102181935A (en) * 2010-10-26 2011-09-14 江阴浚鑫科技有限公司 Method and corrosive liquid for making texture surface of monocrystalline silicon
CN102851743A (en) * 2012-09-05 2013-01-02 浙江鸿禧光伏科技股份有限公司 Method for reducing surface reflectivity during polycrystalline silicon texturing
CN103346204A (en) * 2013-06-07 2013-10-09 中利腾晖光伏科技有限公司 Polycrystalline chained multi-step texturing technology
CN203325843U (en) * 2013-07-02 2013-12-04 苏州阿特斯阳光电力科技有限公司 Fabric-surface manufacturing device for solar battery
CN103603055A (en) * 2013-11-25 2014-02-26 英利能源(中国)有限公司 Polishing method of monocrystalline silicon wafer, solar cell and manufacturing method thereof
CN103872183A (en) * 2014-04-03 2014-06-18 苏州阿特斯阳光电力科技有限公司 Single face polishing method
CN104201252A (en) * 2014-09-22 2014-12-10 苏州阿特斯阳光电力科技有限公司 PERC (passivated emitter and locally diffused rear contact) solar cell preparation method
CN104505438A (en) * 2015-01-05 2015-04-08 无锡德鑫太阳能电力有限公司 Solar battery cell preparation system
CN104966762A (en) * 2015-07-09 2015-10-07 苏州阿特斯阳光电力科技有限公司 Preparation method of texturized surface structure of crystalline silicon solar cell

Also Published As

Publication number Publication date
CN105696083A (en) 2016-06-22

Similar Documents

Publication Publication Date Title
TWI669830B (en) Method for manufacturing local back contact solar cell
CN108054224B (en) Textured structure of crystalline silicon solar cell and preparation method thereof
CN104037257B (en) Solaode and manufacture method, single-side polishing apparatus
CN105810779B (en) A kind of preparation method of PERC solar cells
CN106229386B (en) A kind of method that silver-bearing copper bimetallic MACE method prepares black silicon structure
CN101872806A (en) Method for texture etching of solar cell silicon wafer and method for manufacturing solar cell
WO2015017956A1 (en) Single-sided polishing method for monocrystalline silicon wafer used in solar battery
CN105226112A (en) A kind of preparation method of efficient crystal silicon solar batteries
CN106024988A (en) One-step wet black silicon preparation and surface treatment method
CN107675263A (en) The optimization method of monocrystalline silicon pyramid structure matte
CN104505425B (en) Method for preparing solar monocrystal back polished cell piece
CN102737981A (en) Method for realizing silicon wafer singleside polishing
CN105696083B (en) A kind of preparation method of solar battery pile face
CN107785456A (en) A kind of preparation method of back contact solar cell
CN109192809A (en) A kind of full back electrode cell and its efficiently sunken light and selective doping manufacturing method
CN110534595A (en) A kind of PERC double-sided solar battery and preparation method thereof
CN106449373A (en) Heterojunction cell texturing and washing method
CN105097963A (en) Selectively textured crystal silicon solar cell and preparation method thereof
CN108091557A (en) A kind of rear surface of solar cell etching technics
CN105133038B (en) The preparation method and applications of polysilicon with efficient nano suede structure
CN103219426A (en) Extra small suede solar cell and preparation method thereof
CN108666379A (en) A kind of p-type back contacts solar cell and preparation method thereof
CN208970515U (en) Dual oxide layer PERC battery
CN105957921B (en) A kind of method that utilization printing technology prepares N-type silicon IBC solar cells
CN104716206B (en) A kind of method of cell piece reworks conversion efficiency after raising coated with antireflection film

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: No. 88 Xiexin Avenue, Funing Economic Development Zone, Yancheng City, Jiangsu Province

Patentee after: Funing atlas sunshine Power Technology Co., Ltd

Address before: No. 88 Yancheng City Avenue GCL 224000 Funing County in Jiangsu Province Economic Development Zone

Patentee before: CSI-GCL SOLAR MANUFACTURING (YANCHENG) Co.,Ltd.