CN105696083A - Preparation method of solar cell textured structure - Google Patents
Preparation method of solar cell textured structure Download PDFInfo
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- CN105696083A CN105696083A CN201610066750.8A CN201610066750A CN105696083A CN 105696083 A CN105696083 A CN 105696083A CN 201610066750 A CN201610066750 A CN 201610066750A CN 105696083 A CN105696083 A CN 105696083A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 238000005498 polishing Methods 0.000 claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000008367 deionised water Substances 0.000 claims abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000007797 corrosion Effects 0.000 claims description 23
- 238000005260 corrosion Methods 0.000 claims description 23
- 206010010904 Convulsion Diseases 0.000 claims description 11
- 230000036461 convulsion Effects 0.000 claims description 11
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 6
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 6
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 22
- 230000000694 effects Effects 0.000 abstract description 11
- 238000005530 etching Methods 0.000 abstract description 5
- 239000011259 mixed solution Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 210000004027 cell Anatomy 0.000 description 10
- 235000008216 herbs Nutrition 0.000 description 8
- 210000002268 wool Anatomy 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Photovoltaic Devices (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
Abstract
The invention discloses a preparation method of a solar cell textured structure. The method comprises the following steps: (1) preparation of etching mixed liquid: mixing HNO3, HF and deionized water according to the volume ratio of 4:1:2.5-5:1:2.5; (2) impregnating a silicon chip to be treated in the etching mixed liquid, and controlling the distance between the upper surface of the silicon chip and the liquid surface of the etching mixed solution at 5-10mm; and etching in a negative-pressure air draft environment, thereby obtaining the textured structure on the lower surface of the silicon chip, wherein the pressure of the negative-pressure air draft environment is -50 to -100Pa. The method can implement the polishing effect on one surface while forming the textured structure on the other surface of the silicon chip.
Description
Technical field
The preparation method that the present invention relates to a kind of solar battery pile face, belongs to technical field of solar batteries。
Background technology
Conventional Fossil fuel approach exhaustion day by day, in existing sustainable energy, solar energy be undoubtedly one clean most, the most general and most potential alternative energy source。Device of solar generating is also called solaode or photovoltaic cell, it is possible to solar energy is directly changed into electric energy, and its electricity generating principle is based on the photovoltaic effect of semiconductor PN。
In the fabrication of a solar cell, generally utilize acid solution or aqueous slkali to crystalline silicon anisotropic etch characteristic on crystal orientation, the matte being similar to " inverted pyramid " structure is formed at silicon chip surface, by increasing the order of reflection irradiating light at silicon chip surface, improve the absorbance of light, thus improving the conversion efficiency of monocrystaline silicon solar cell。
On the other hand, along with the development of science and technology, occurring in that localized contact back of the body passivation (PERC) solaode, this is a kind of high performance solar batteries out newly developed, obtains the extensive concern of industry。Its core is to cover at the shady face aluminium oxide of silicon chip or silicon oxide film (5 ~ 100 nanometers), to play passivated surface, improves the effect of long-wave response, thus promoting the conversion efficiency of battery。But, aluminium oxide or silicon oxide are non-conductive, it is therefore desirable to this thin film local openings, in order to aluminum metal contacts with silicon chip back surface, collected current。It addition, aluminum metal (usually aluminium paste), in high-temperature sintering process, the passivation of the disruptive oxidation aluminum of meeting or silicon oxide, therefore generally on aluminium oxide or silicon oxide film, to cover silicon nitride film again, play a protective role。The preparation method of existing PERC solaode mainly comprises the steps: making herbs into wool, diffusion, back of the body polishing, etching and decontamination glass, backside deposition aluminium oxide or silicon oxide film, deposited silicon nitride protecting film, front deposited silicon nitride antireflection layer, back side local openings, the positive back metal slurry of silk screen printing, sintering, can obtain solaode。
Therefore, carry on the back in the preparation process of passivation cell at PERC, it is necessary to cell backside is carried out single-sided polishing。For the polishing effect obtained in crystal silicon solar battery back face, to reach to carry on the back preferably passivation effect, and increasing long-wave response, people have attempted many methods, and conventional method includes chemistry mask corrosion polishing, physical grinding polishing etc.。Wherein, chemistry mask corrosion finishing method includes alkali polishing and acid polishing, it is possible to obtain good polishing effect, but the method technique is complex, relatively costly, so using less in the industrial production。For physical grinding polishing processes, its disadvantage is in that cell piece surface to be produced more serious damage, it is impossible to be efficiently used for producing。
Therefore, develop a kind of new finishing method, can realize saving cost, volume production can be realized again, one of research and development method remaining current those skilled in the art。
Summary of the invention
The preparation method that the goal of the invention of the present invention is to provide a kind of solar battery pile face。
To achieve the above object of the invention, the technical solution used in the present invention is: the preparation method of a kind of solar battery pile face, comprises the steps:
(1) configuration corrosion mixed liquor: by volume by HNO3: HF: deionized water=4:1:2.5 ~ 5:1:2.5 is mixed to get corrosion mixed liquor；
(2) pending silicon chip is immersed in above-mentioned corrosion mixed liquor, and make the spacing between the upper surface of silicon chip and corrosion mixed liquor liquid level control at 5 ~ 10mm；
Under negative pressure convulsion environment after corrosion, suede structure can be prepared on the lower surface of silicon chip；
The pressure of described negative pressure convulsion environment is-50 ~-100Pa。
Above, it is possible in the making herbs into wool Tank groove of chain type texturing machine, mix corrosion mixed liquor, then corrosion mixed liquor is got in making herbs into wool Bath groove with circular flow (100 ~ 180L/min), and guarantee that the liquid level in Bath groove and silicon chip difference in height are at 5 ~ 10mm。
In technique scheme, described step (2) is corroded after 1.5 ~ 2.5min under negative pressure convulsion environment, continue through cleaning, dry up after can obtain suede structure。
In technique scheme, in described step (2), preparing while suede structure on the lower surface of silicon chip, the upper surface at silicon chip forms single-sided polishing。
Preferably, described solaode is PERC solaode。
Preferably, the pressure of described negative pressure convulsion environment is-60 ~-80Pa。
The mechanism of the present invention is as follows: at HNO3On-HF system making herbs into wool basis, select suitable solution ratio, it is ensured that lower surface corrosion is in isotropism unification；Then the distance adjusting upper surface and liquid level reaches 5 ~ 10mm, the gas NOx reacted in course of reaction, and in suitable convulsion environment (-50 ~-100Pa), a part is pumped, and a part can be redissolved in liquid to generate HNO2Continue to participate in oxidation reaction, when silicon chip upper surface and liquid level close together, the concentration of the corrosive liquid that upper surface contacts can much larger than lower surface, and in the corrosive liquid that contacts of upper surface lateral encroaching speed much larger than longitudinal corrosion rate, thus reaching polishing effect at silicon chip upper surface, form suede structure at silicon chip lower surface simultaneously；Complete thus realizing matte with polishing one step；Additionally, this matte is more smooth, being more beneficial for PERC and carry on the back passivation technology, increasing long-wave response, thus being effectively improved cell piece transformation efficiency。
Owing to technique scheme is used, the present invention compared with prior art has the advantage that
1, the preparation method that the present invention develops a kind of solar battery pile face, polishing effect can be realized at another side while the one side of silicon chip forms suede structure, experiment proves: adopts the reflectance of the solar cell surface of the method acquisition of the present invention to improve 5 ~ 6% compared to existing technology, achieves significant polishing effect；
2, the preparation method of the present invention is simple, it is not necessary to mask, less costly, is suitable to popularization and application。
Accompanying drawing explanation
Fig. 1 is the schematic diagram in the embodiment of the present invention one after the making herbs into wool of silicon chip lower surface。
Fig. 2 is the schematic diagram in the embodiment of the present invention one after the polishing of silicon chip upper surface。
Detailed description of the invention
Below in conjunction with embodiment, the present invention is further described。
Embodiment one:
Shown in Fig. 1 ~ 2, the preparation method of a kind of solar battery pile face, comprise the steps:
(1) chain equipment texturing slot being made into concentration is HNO3: HF: deionized water=4:1:2.5(volume ratio) corrode mixed liquor；
(2) the corrosion mixed liquor that step (1) obtains is got in making herbs into wool Bath groove with circular flow (100 ~ 180L/min)；
Pending silicon chip (adopting the polycrystalline P156 silicon chip in conventional identical crystal orientation) is immersed in above-mentioned corrosion mixed liquor, adjusts Bath groove both sides overflow baffle, it is ensured that the difference in height of the liquid level in Bath groove and silicon chip upper surface is at 5 ~ 10mm；
(3) convulsion in Bath groove is adjusted between-50 ~-100Pa, corrosion 1.5 ~ 2.5min, by the silicon chip after corrosion through a series of cleaning and drying, suede structure can be prepared on the lower surface of silicon chip, form single-sided polishing at the upper surface of silicon chip simultaneously。
Being measured by D8 reflectance test instrument by above-mentioned prepared silicon chip upper surface (i.e. the shady face of cell piece), 3 Weighted Average Method, result is as follows:
| Sampling | Center | Corner 1 | Corner 2 | Meansigma methods |
| 1 | 31.80% | 31.10% | 32.10% | 31.67% |
| 2 | 31.50% | 31.90% | 32.00% | 31.80% |
| 3 | 31.90% | 31.40% | 32.40% | 31.90% |
| On average | 31.73% | 31.47% | 32.17% | 31.79% |
Being measured by D8 reflectance test instrument by above-mentioned prepared silicon chip lower surface (i.e. the sensitive surface of cell piece), 3 Weighted Average Method, result is as follows:
| Sampling | Center | Corner 1 | Corner 2 | Meansigma methods |
| 1 | 24.50% | 24.10% | 25.10% | 24.57% |
| 2 | 24.50% | 24.90% | 24.00% | 24.47% |
| 3 | 24.30% | 24.40% | 25.00% | 24.57% |
| On average | 24.43% | 24.47% | 24.70% | 24.53% |
Shown in attached Fig. 1 and 2, as seen from the figure, the upper surface of silicon chip defines polishing effect。
Comparative example one
The preparation method of a kind of crystal silicon solar energy battery single-sided polishing, comprises the steps:
(1) chain equipment texturing slot being made into concentration is HNO3: HF: deionized water=3.5:1:2.5(volume ratio) corrode mixed liquor；
(2) the corrosion mixed liquor that step (1) obtains is got in making herbs into wool Bath groove with circular flow (100 ~ 180L/min)；
Pending silicon chip (adopting the polycrystalline P156 silicon chip identical with embodiment) is immersed in above-mentioned corrosion mixed liquor, adjusts Bath groove both sides overflow baffle, it is ensured that the difference in height of the liquid level in Bath groove and silicon chip upper surface is at 20mm；
(3) convulsion in Bath groove is adjusted about-200Pa, corrode 1.5 ~ 2.5min, by the silicon chip after corrosion through a series of cleaning and drying, suede structure can be prepared on the lower surface of silicon chip。
Being measured by D8 reflectance test instrument by above-mentioned prepared silicon chip upper surface, 3 Weighted Average Method, result is as follows:
| Sampling | Center | Corner 1 | Corner 2 | Meansigma methods |
| 1 | 26.20% | 25.70% | 25.10% | 25.67% |
| 2 | 25.50% | 25.10% | 25.30% | 25.30% |
| 3 | 25.30% | 25.40% | 25.10% | 25.27% |
| On average | 25.67% | 25.40% | 25.17% | 25.41% |
Being measured by D8 reflectance test instrument by above-mentioned prepared silicon chip lower surface (sensitive surface), 3 Weighted Average Method, result is as follows:
| Sampling | Center | Corner 1 | Corner 2 | Meansigma methods |
| 1 | 24.70% | 23.70% | 24.10% | 24.17% |
| 2 | 25.20% | 24.40% | 24.30% | 24.63% |
| 3 | 24.30% | 23.80% | 24.10% | 24.07% |
| On average | 24.73% | 23.97% | 24.17% | 24.29% |
From the above with comparative example it can be seen that embodiment upper surface reflectance reaches 31.79%, and the upper surface reflectance after tradition making herbs into wool only has 25.41%, and the reflectance of embodiment is apparently higher than comparative example。Additionally, after measured, the short circuit current of embodiment exceeds 0.3mA/cm compared with the short circuit current of comparative example3, the open-circuit voltage of embodiment exceeds 2mV compared with the open-circuit voltage of comparative example, and the transformation efficiency of embodiment is exceed 0.1 ~ 0.3% than the transformation efficiency of comparative example。
As can be seen here, the technique of the present invention can be greatly improved silicon chip back surface reflectance, makes the back side more smooth, and back surface field contact is more abundant, to a certain degree improves back surface field passivation effect, and adds long-wave response, also to a certain degree improves the transformation efficiency of battery。
Claims (5)
1. the preparation method of a solar battery pile face, it is characterised in that comprise the steps:
(1) configuration corrosion mixed liquor: by volume by HNO3: HF: deionized water=4:1:2.5 ~ 5:1:2.5 is mixed to get corrosion mixed liquor；
(2) pending silicon chip is immersed in above-mentioned corrosion mixed liquor, and make the spacing between the upper surface of silicon chip and corrosion mixed liquor liquid level control at 5 ~ 10mm；
Under negative pressure convulsion environment after corrosion, suede structure can be prepared on the lower surface of silicon chip；
The pressure of described negative pressure convulsion environment is-50 ~-100Pa。
2. the preparation method of solar battery pile face according to claim 1, it is characterised in that: described step (2) is corroded after 1.5 ~ 2.5min under negative pressure convulsion environment, continue through cleaning, dry up after can obtain suede structure。
3. the preparation method of solar battery pile face according to claim 1, it is characterised in that: in described step (2), preparing while suede structure on the lower surface of silicon chip, the upper surface at silicon chip forms single-sided polishing。
4. the preparation method of solar battery pile face according to claim 1, it is characterised in that: described solaode is PERC solaode。
5. the preparation method of solar battery pile face according to claim 1, it is characterised in that: the pressure of described negative pressure convulsion environment is-60 ~-80Pa。
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| CN201610066750.8A CN105696083B (en) | 2016-01-29 | 2016-01-29 | A kind of preparation method of solar battery pile face |
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| CN201610066750.8A CN105696083B (en) | 2016-01-29 | 2016-01-29 | A kind of preparation method of solar battery pile face |
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| CN105696083A true CN105696083A (en) | 2016-06-22 |
| CN105696083B CN105696083B (en) | 2018-03-09 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109360870A (en) * | 2018-11-23 | 2019-02-19 | 浙江昱辉阳光能源江苏有限公司 | A kind of low-cost solar cell backside polishing process |
| CN110034211A (en) * | 2019-04-23 | 2019-07-19 | 苏州阿特斯阳光电力科技有限公司 | A method of reducing chain type texturing chemicals consumption |
| CN111261496A (en) * | 2018-11-30 | 2020-06-09 | 有研半导体材料有限公司 | Acid corrosion processing method of large-diameter substrate wafer suitable for single-side polishing |
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| CN109360870A (en) * | 2018-11-23 | 2019-02-19 | 浙江昱辉阳光能源江苏有限公司 | A kind of low-cost solar cell backside polishing process |
| CN109360870B (en) * | 2018-11-23 | 2020-07-31 | 浙江昱辉阳光能源江苏有限公司 | Low-cost solar cell back polishing process |
| CN111261496A (en) * | 2018-11-30 | 2020-06-09 | 有研半导体材料有限公司 | Acid corrosion processing method of large-diameter substrate wafer suitable for single-side polishing |
| CN111261496B (en) * | 2018-11-30 | 2022-10-14 | 有研半导体硅材料股份公司 | Acid corrosion processing method of large-diameter substrate wafer suitable for single-side polishing |
| CN110034211A (en) * | 2019-04-23 | 2019-07-19 | 苏州阿特斯阳光电力科技有限公司 | A method of reducing chain type texturing chemicals consumption |
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Address after: No. 88 Xiexin Avenue, Funing Economic Development Zone, Yancheng City, Jiangsu Province Patentee after: Funing atlas sunshine Power Technology Co., Ltd Address before: No. 88 Yancheng City Avenue GCL 224000 Funing County in Jiangsu Province Economic Development Zone Patentee before: CSI-GCL SOLAR MANUFACTURING (YANCHENG) Co.,Ltd. |