CN104505425B - Method for preparing solar monocrystal back polished cell piece - Google Patents
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- CN104505425B CN104505425B CN201410572702.7A CN201410572702A CN104505425B CN 104505425 B CN104505425 B CN 104505425B CN 201410572702 A CN201410572702 A CN 201410572702A CN 104505425 B CN104505425 B CN 104505425B
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- 238000000034 method Methods 0.000 title claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- 238000005498 polishing Methods 0.000 claims abstract description 49
- 238000009792 diffusion process Methods 0.000 claims abstract description 47
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 36
- 238000005516 engineering process Methods 0.000 claims abstract description 29
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 28
- 238000005554 pickling Methods 0.000 claims abstract description 10
- 238000005406 washing Methods 0.000 claims abstract description 10
- 230000005587 bubbling Effects 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 6
- 238000001035 drying Methods 0.000 claims abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 41
- 230000003647 oxidation Effects 0.000 claims description 39
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- 238000001816 cooling Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000003912 environmental pollution Methods 0.000 abstract description 4
- 239000004094 surface-active agent Substances 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000001039 wet etching Methods 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract 1
- 238000004506 ultrasonic cleaning Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 11
- 238000001514 detection method Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000012530 fluid Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for preparing a solar monocrystal back polished cell piece. Through improving a diffusion technology, the method comprises: generating PSG in certain thickness and density on the surface of a monocrystalline silicon piece; in a wet etching groove, removing PSG and PN junctions on the back surface of the monocrystalline silicon piece by using HF and HNO3 solutions; in an ultrasonic cleaning bubbling groove, performing back polishing by using a sodium hydroxide solution which is in certain temperature and is added with water; then, performing HF acid pickling, washing, and drying on the back polished monocrystalline silicon piece; finally, using PECVD to deposit silicon nitride on the front surface of the monocrystalline silicon piece, and performing electrode printing and sintering. Beneficial effects of the method are that through improving the diffusion technology, thickness and consistency of a diffusion silicon piece PSG are increased, silicon piece sheet resistance uniformity is improved, a dead layer of the silicon piece is removed, and service life of the silicon piece is improved, the method does not need additional devices or reform an existing wet etching groove, and is simple and easy, a polishing solution is an aqueous alkali which does not contain an organic solution or added with a surface active agent, so the solution would not cause environmental pollution, and production cost is reduced.
Description
Technical field
The present invention relates to solar energy single crystal cell piece correlative technology field, refer in particular to one kind and prepare solar energy single crystal back of the body throwing
The method of light cell piece.
Background technology
The back of the body polishing technology of monocrystalline silicon piece can improve the optics benefit of solar silicon wafers, strengthen silicon chip back surface passivation effect
Really, lift the photoelectric transformation efficiency of solaode, and can be superimposed with mainstream technologys such as se, lbsf, perl, mwt, compatible
Property good, can improve the solar cell properties using these technology further, propulsion high efficiency solar cell industrialization
Development.Monocrystalline silicon battery back surface polishing technology needs the growth requirement with reference to solar cell industry, is allowed to more environmentally-friendly,
Polishing chemicals usage amount is low, and back of the body polishing effect is easier to control.
Silicon solar cell industry is usually used thermal diffusion method preparation pn-junction at present, is passed through a certain amount of oxygen before phosphorus diffusion
Gas is pre-oxidized to control phosphorus diffusion velocity and sheet resistance uniformity；Being passed through a certain amount of oxygen in logical phosphorus oxychloride makes silicon chip
Surface forms one layer of phosphorosilicate glass (psg) to promote pocl3Abundant decomposition and avoid pcl5Corrosion to silicon chip surface.
In the prior art, the back of the body finishing method of monocrystal silicon is that the monocrystalline silicon piece back side after making herbs into wool is placed in polishing fluid,
Front is placed in outside polishing fluid and carries out chemistry back of the body polishing.The method needs extra increase equipment or existing wet method etching groove is changed
Make, the cost that original line is improved with coupling is high, and polishing fluid be using organic solution or the aqueous slkali that is added with surfactant,
Cause environmental pollution, and increased production cost.
Content of the invention
The present invention is above-mentioned in order to overcome the shortcomings of to exist in prior art, there is provided a kind of simple and low cost
The method preparing solar energy single crystal back of the body polishing cell piece.
To achieve these goals, the present invention employs the following technical solutions:
A kind of method preparing solar energy single crystal back of the body polishing cell piece, by improving diffusion technique parameter, in monocrystalline silicon piece
The Surface Creation psg of certain thickness and density, then carries out back of the body polishing again, is eventually fabricated solar energy to solar monocrystalline silicon slice
Cell piece, concrete operation step is as follows:
(1) monocrystalline silicon piece after cleaning and texturing, is diffused using tubular diffusion furnace, in conventional phosphoric diffusion technology
Improve pre-oxidation and pre-deposition technique, and increase High temperature diffusion propulsion oxidation technology and cooling oxidation technology；
(2) monocrystalline silicon piece is carried out after making herbs into wool diffusion, in wet method etching groove, etching removes psg and the pn-junction at the back side；
(3) carried on the back added with the sodium hydroxide solution of dehydrated alcohol with having uniform temperature in being cleaned by ultrasonic bubbling groove
Polishing；
(4) with hf, pickling, washing and drying are carried out to the monocrystalline silicon piece after back of the body polishing；
(5) use pecvd in monocrystalline silicon piece front deposited silicon nitride, and carry out electrode print and sintering.
The method is passed through to improve pre-oxidation and pre-deposition technique in conventional phosphoric diffusion technology, increases High temperature diffusion propulsion oxygen
Metallization processes and cooling oxidation technology, increased psg thickness and the consistency of diffusion silicon chip, improve the uniformity of silicon chip sheet resistance,
And can effectively remove dead layer, improve minority carrier life time, so that diffusion silicon chip is applied to and prepare solar energy single crystal back of the body polishing cell piece.
Sodium hydroxide solution has very strong corrosivity to silicon at a certain temperature, and the corrosivity to psg are far smaller than silicon, therefore exists
This corrosive differentially protected front side of silicon wafer matte and pn-junction is make use of during back of the body polishing.Removing silicon chip back side psg and pn-junction
During rough polishing has been carried out to silicon chip back side simultaneously, decrease the easy nucleating factor forming matte.When sodium hydroxide solution reaches
To certain concentration, it diminishes to the anisotropy factor of monocrystal silicon, can reach the effect of polishing.Add dehydrated alcohol and adopt
Clean the release that bubbling groove can assist bubble hydrogen with ultrasound wave, it is to avoid silicon chip surface causes outward appearance because the note of bubble hydrogen is attached
Speckle.The method does not need additionally to increase equipment or existing wet method etching groove is transformed, and polishing fluid do not adopt organic
Solution or the aqueous slkali being added with surfactant, do not result in environmental pollution, and reduce production cost.
Preferably, in step (1), pre-oxidation and pre-deposition technique are at a certain temperature, first silicon chip to be carried out
The pre-oxidation of certain time, the oxygen volume content being passed through during pre-oxidation is 30%-40%, then carries out the preliminary sedimentation of certain time
Long-pending, the diffusion nitrogen volume content being passed through during pre-deposition is 8%-11%, and oxygen volume content is 8%-13%.Increase during pre-oxidation
Oxygen flow, makes the oxide layer of silicon chip surface closeer thicker, slows down the infiltration of phosphorus, improves minority carrier life time.
Preferably, in step (1), High temperature diffusion propulsion oxidation technology is to be warmed up to uniform temperature and silicon chip is carried out
High temperature diffusion propulsion oxidation, is passed through a certain amount of oxygen, the carrier of oxygen being passed through during High temperature diffusion propulsion when High temperature diffusion advances
Long-pending content is 10%-30%.It is passed through a certain amount of oxygen when High temperature diffusion advances, both can make the pocl of remnants3Fully divide
Solution, can make psg finer and close again, reduce the impact to front side of silicon wafer during back of the body polishing.
Preferably, in step (1), cooling oxidation technology is to cool to uniform temperature and silicon chip is carried out with cooling oxidation,
It is passed through a certain amount of oxygen in cooling, the oxygen volume content being passed through during cooling is 10%-30%.It is passed through certain in cooling
The oxygen of amount, it is possible to reduce the hot injury that diffusion itself brings to silicon chip, makes sheet resistance more uniform.
Preferably, pre-oxidation and pre-deposition technique are, at a temperature of 800-830 DEG C, to carry out 10- to silicon chip first
The pre-oxidation of 15min, then carries out the pre-deposition of 8-12min.
Preferably, High temperature diffusion propulsion oxidation technology is to be warmed up to 850-870 DEG C and carry out High temperature diffusion propulsion to silicon chip
Oxidation, wherein intensification propulsion time are 5-9min, and the constant temperature propulsion time is 4-10min.
Preferably, cooling oxidation technology is, cools to 800-810 DEG C and silicon chip is carried out with cooling oxidation, temperature fall time is
9-15min.
Preferably, in step (1), through pre-oxidation and pre-deposition technique, increase High temperature diffusion propulsion oxidation technology and
After cooling oxidation technology, the silicon chip psg thickness of gained is 30-70nm.It is 30-70nm that present inventive concept controls psg thickness,
If psg film is too thin during silicon chip back of the body polishing, sodium hydroxide solution can corrode the matte penetrating psg layer impact front and pn-junction, breaks
The light trapping structure of bad matte；Psg film is too thick can cause most of phosphorus doping less than silicon chip inside, pn-junction is too deep, and sheet resistance reaches not
To production requirement.
Preferably, in step (2), wet method etching groove is used hf and hno3Solution removes its back side psg and pn-junction.
Preferably, in step (3), the concentration of sodium hydroxide is 100g/l-160g/l, and temperature is 60 DEG C -75 DEG C, no
The concentration of water-ethanol is 5ml/l-15ml/l, and the polishing time is 120s-600s.The concentration of adjustment sodium hydroxide and polishing temperature
Degree can reach best polishing effect.
The invention has the beneficial effects as follows: by improving pre-oxidation and pre-deposition technique in conventional phosphoric diffusion technology, increase
High temperature diffusion propulsion oxidation technology and cooling oxidation technology, increased psg thickness and the consistency of diffusion silicon chip, improve silicon chip
Sheet resistance uniformity, and can effectively remove silicon chip dead layer, improve silicon chip minority carrier life, so that diffusion silicon chip is applied to and prepare the sun
Can monocrystalline back of the body polishing cell piece；Do not need additionally to increase equipment or existing wet method etching groove is transformed, simple, and
Polishing fluid not using organic solution or the aqueous slkali that is added with surfactant, does not result in environmental pollution, and reduces production
Cost.
Specific embodiment
With reference to specific embodiment, the present invention will be further described.
200 156 type monocrystalline silicon pieces after cleaning and texturing, are diffused using tubular diffusion furnace.In 820 DEG C of temperature
Under degree, first silicon chip is carried out with the pre-oxidation of 10min, oxygen volume ratio is 30%, then carries out the pre-deposition of 10min, diffusion
Nitrogen volume ratio is 10%, and oxygen volume ratio is 10%.It is warmed up to 855 DEG C and carry out High temperature diffusion propulsion oxidation, the carrier of oxygen being passed through
Long-pending ratio is 10%, and the wherein intensification propulsion time is 9 minutes, and the constant temperature propulsion time is 5 minutes.Finally cool to 800 DEG C to be dropped
Temperature oxidation, the oxygen volume ratio being passed through is 26%, and temperature fall time is 15 minutes.Silicon chip after diffusion divides 4 groups subsequently to be carried on the back throwing
The experiment of light.
Embodiment 1
A () carries out after making herbs into wool diffusion to 50 156 type monocrystalline silicon pieces, use hf and hno in wet method etching groove3Solution etches
Remove psg and the pn-junction at the back side；
B () immersion temperature is 65 DEG C, in the 160g/l sodium hydroxide solution added with 7ml/l dehydrated alcohol, the ultrasonic throwing of bubbling
Light 120s；
C () carries out pickling, washing and drying to the monocrystalline silicon piece after back of the body polishing with hf；
D () uses pecvd in monocrystalline silicon piece front deposited silicon nitride, and carry out electrode print and sintering, completes whole electricity
The production in pond.
Wherein the silicon chip after back of the body polishing is carried out with the detection of back surface reflectance, positive table is carried out to the silicon chip after pickling washing
The detection of face reflectance, carries out the detection of electric property to resultant battery.
Embodiment 2
A () carries out after making herbs into wool diffusion to 50 156 type monocrystalline silicon pieces, use hf and hno in wet method etching groove3Solution etches
Remove psg and the pn-junction at the back side；
B () immersion temperature is 75 DEG C, in the 120g/l sodium hydroxide solution added with 7ml/l dehydrated alcohol, the ultrasonic throwing of bubbling
Light 180s；
C () carries out pickling, washing and drying to the monocrystalline silicon piece after back of the body polishing with hf；
D () uses pecvd in monocrystalline silicon piece front deposited silicon nitride, and carry out electrode print and sintering, completes whole electricity
The production in pond.
Wherein the silicon chip after back of the body polishing is carried out with the detection of back surface reflectance, positive table is carried out to the silicon chip after pickling washing
The detection of face reflectance, carries out the detection of electric property to resultant battery.
Embodiment 3
A () carries out after making herbs into wool diffusion to 50 156 type monocrystalline silicon pieces, use hf and hno in wet method etching groove3Solution etches
Remove psg and the pn-junction at the back side；
B () immersion temperature is 60 DEG C, in the 100g/l sodium hydroxide solution added with 7ml/l dehydrated alcohol, the ultrasonic throwing of bubbling
Light 600s；
C () carries out pickling, washing and drying to the monocrystalline silicon piece after back of the body polishing with hf；
D () uses pecvd in monocrystalline silicon piece front deposited silicon nitride, and carry out electrode print and sintering, completes whole electricity
The production in pond.
Wherein the silicon chip after back of the body polishing is carried out with the detection of back surface reflectance, positive table is carried out to the silicon chip after pickling washing
The detection of face reflectance, carries out the detection of electric property to resultant battery.
Comparative example
Comparative example is in comparative example not having step (b) with the difference of embodiment 1-3, does not carry out back of the body polishing.
Embodiment 1-3 is as shown in table 1 with the average electric property testing result of comparative example resultant battery, and wherein uoc is into
The open-circuit voltage of product battery, isc is the short circuit current of resultant battery, and ff is the fill factor, curve factor of resultant battery, and eff is resultant battery
Photoelectric transformation efficiency.After washing with the back surface reflectance of comparative example and pickling after the back of the body polishing of embodiment 1-3, front surface is anti-
Penetrate rate testing result as shown in table 2.
Table 1
| uoc(mv) | isc(a) | Ff (%) | Eff (%) | |
| Embodiment 1 | 0.6411 | 9.008 | 79.88 | 19.31 |
| Embodiment 2 | 0.6418 | 9.032 | 79.81 | 19.36 |
| Embodiment 3 | 0.6415 | 9.037 | 79.91 | 19.39 |
| Comparative example | 0.6403 | 9.021 | 79.69 | 19.26 |
Table 2
| Back surface reflectance | Front surface reflectance | |
| Embodiment 1 | 42.8% | 12.1% |
| Embodiment 2 | 44.5% | 11.2% |
| Embodiment 3 | 45.7% | 11.8% |
| Comparative example | 27.4% | 11.2% |
From table 1 and the data of table 2 can be seen that with comparative example do not carry out carry on the back polishing compared with, with this method implement the back of the body polishing
Do not have an impact front matte and the pn-junction of silicon chip.Embodiment 1 to 3, due to silicon chip has been carried out with back of the body polishing, improves back surface
Reflectance, increased the reflection in monocrystal silicon back surface for the solar spectrum medium-long wave band spectrum, eliminates silicon chip back side further miscellaneous
Matter and damage layer, reduce compound, so that open-circuit voltage, fill factor, curve factor and photoelectric transformation efficiency is all increased.
Claims (6)
1. a kind of method preparing solar energy single crystal back of the body polishing cell piece, is characterized in that, by improving diffusion technique parameter, in list
The crystal silicon chip Surface Creation psg of certain thickness and density, then carries out back of the body polishing again, is eventually fabricated to solar monocrystalline silicon slice
Solar battery sheet, concrete operation step is as follows:
(1) monocrystalline silicon piece after cleaning and texturing, is diffused using tubular diffusion furnace, improves in conventional phosphoric diffusion technology
Pre-oxidation and pre-deposition technique, and increase High temperature diffusion propulsion oxidation technology and cooling oxidation technology；Pre-oxidation and pre-deposition work
Skill is, at a temperature of 800-830 DEG C, first silicon chip is carried out with the pre-oxidation of 10-15min, the carrier of oxygen being passed through during pre-oxidation
Long-pending content is 30%-40%, then carries out the pre-deposition of 8-12min, and the diffusion nitrogen volume content being passed through during pre-deposition is 8%-
11%, oxygen volume content is 8%-13%；
(2) monocrystalline silicon piece is carried out after making herbs into wool diffusion, in wet method etching groove, etching removes psg and the pn-junction at the back side；
(3) entered with having the sodium hydroxide solution added with dehydrated alcohol that temperature is 60 DEG C -75 DEG C in being cleaned by ultrasonic bubbling groove
Row back of the body polishing；
(4) with hf, pickling, washing and drying are carried out to the monocrystalline silicon piece after back of the body polishing；
(5) use pecvd in monocrystalline silicon piece front deposited silicon nitride, and carry out electrode print and sintering.
2. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 1, is characterized in that, in step
(1), in, High temperature diffusion propulsion oxidation technology is to be warmed up to 850-870 DEG C and silicon chip is carried out with High temperature diffusion propulsion oxidation, wherein rise
The warm propulsion time is 5-9min, and the constant temperature propulsion time is 4-10min, is passed through oxygen when High temperature diffusion advances, High temperature diffusion pushes away
The oxygen volume content being passed through when entering is 10%-30%.
3. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 1, is characterized in that, in step
(1), in, cooling oxidation technology is to cool to 800-810 DEG C and silicon chip is carried out with cooling oxidation, temperature fall time is 9-15min, in fall
It is passed through oxygen, the oxygen volume content being passed through during cooling is 10%-30% when warm.
4. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 1 or 2 or 3, is characterized in that,
In step (1), after pre-oxidation and pre-deposition technique, increase High temperature diffusion propulsion oxidation technology and cooling oxidation technology,
The silicon chip psg thickness of gained is 30-70nm.
5. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 1, is characterized in that, in step
(2), in, wet method etching groove is used hf and hno3Solution removes its back side psg and pn-junction.
6. a kind of method preparing solar energy single crystal back of the body polishing cell piece according to claim 1, is characterized in that, in step
(3) in, the concentration of sodium hydroxide is 100g/l-160g/l, and the concentration of dehydrated alcohol is 5ml/l-15ml/l, the polishing time
For 120s-600s.
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| CN109119338A (en) * | 2018-08-06 | 2019-01-01 | 横店集团东磁股份有限公司 | A kind of highback polishing and efficient single crystal process |
| CN109888062B (en) * | 2019-03-29 | 2021-03-30 | 江苏日托光伏科技股份有限公司 | MWT solar cell laser SE + alkali polishing diffusion process |
| CN110518088B (en) * | 2019-07-18 | 2022-04-12 | 天津爱旭太阳能科技有限公司 | Preparation method of SE solar cell |
| CN110534408A (en) * | 2019-07-30 | 2019-12-03 | 苏州昊建自动化系统有限公司 | A kind of crystal-silicon battery slice chain type alkali polishing production line and chain type alkali polishing method |
| CN111129171B (en) * | 2019-12-31 | 2022-03-04 | 横店集团东磁股份有限公司 | Covering film for alkali polishing and preparation method thereof |
| CN111627804A (en) * | 2020-04-14 | 2020-09-04 | 天津爱旭太阳能科技有限公司 | Solar cell single-side polishing process utilizing mask protection |
| CN113690342A (en) * | 2021-08-11 | 2021-11-23 | 浙江中晶新能源股份有限公司 | Chain type back polishing equipment for polycrystalline silicon battery piece |
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| CN103715303B (en) * | 2013-12-24 | 2016-06-01 | 衡水英利新能源有限公司 | A kind of diffusion method improving solar cell and filling |
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Denomination of invention: A Method for Preparing Solar Single Crystal Back Polished Cells Effective date of registration: 20230522 Granted publication date: 20170201 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2023330000949 |