CN110534408A - A kind of crystal-silicon battery slice chain type alkali polishing production line and chain type alkali polishing method - Google Patents
A kind of crystal-silicon battery slice chain type alkali polishing production line and chain type alkali polishing method Download PDFInfo
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- CN110534408A CN110534408A CN201910697652.8A CN201910697652A CN110534408A CN 110534408 A CN110534408 A CN 110534408A CN 201910697652 A CN201910697652 A CN 201910697652A CN 110534408 A CN110534408 A CN 110534408A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 87
- 239000010703 silicon Substances 0.000 title claims abstract description 87
- 238000005498 polishing Methods 0.000 title claims abstract description 79
- 239000003513 alkali Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 59
- 238000005554 pickling Methods 0.000 claims abstract description 52
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000003860 storage Methods 0.000 claims abstract description 37
- 239000002253 acid Substances 0.000 claims abstract description 35
- 238000001035 drying Methods 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 238000002791 soaking Methods 0.000 claims description 45
- 239000007788 liquid Substances 0.000 claims description 32
- 238000007599 discharging Methods 0.000 claims description 25
- 239000007921 spray Substances 0.000 claims description 24
- 238000005406 washing Methods 0.000 claims description 18
- 239000012530 fluid Substances 0.000 claims description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 11
- 230000001105 regulatory effect Effects 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 11
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 6
- 239000002351 wastewater Substances 0.000 abstract description 4
- 238000003912 environmental pollution Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 23
- 230000035611 feeding Effects 0.000 description 21
- 210000004027 cell Anatomy 0.000 description 6
- 238000001802 infusion Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- -1 hexafluorosilicic acid Chemical compound 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to solar cell preparation technologies, more particularly to a kind of crystal-silicon battery slice chain type alkali polishing production line and chain type alkali polishing method, chain type alkali polishing production line includes: fully sheathed case, interconnected feeding system is successively arranged in the fully sheathed case, first pickling system, first water wash system, first polishing system, second polishing system, second water wash system, second pickling system, third water wash system, drying system and discharge system, first pickling system and second pickling system include storage acid tank, the storage acid tank is provided with hydrofluoric acid solution, the invention also discloses a kind of crystal-silicon battery slice chain type alkali polishing methods.Hydrofluoric acid solution is used only as cleaning solution in acid cleaning process in above-mentioned production line, and NO is avoided from sourcexGeneration, and will not discharge containing HNO3Waste water, can effectively solve the problem that the problem of environmental pollution in crystal silicon solar batteries preparation process.
Description
Technical field
The present invention relates to solar cell preparation technologies, and in particular to a kind of crystal-silicon battery slice chain type alkali polishing production
Line and chain type alkali polishing method.
Background technique
High efficiency and low cost are the developing direction of solar cell industry now.The efficiency of efficient solar battery is promoted, is needed
Its front and back is handled differently.Influence the factor of battery minority carrier life time and efficiency first is that surface recombination velocity (S.R.V.),
And surface recombination velocity (S.R.V.) is related with passivation quality with pattern, the specific area on positive and negative two surfaces of crystal silicon chip.Another influences electricity
The factor of pond efficiency is the sunken light ability of battery, falls into light ability and depends on the refractive index of front surface and the reflectivity of back surface.Cause
The case where this back surface, can largely influence battery efficiency, and Yao Tigao battery efficiency will carry out the back surface of battery
Optimization.It is usually the polishing of single side wet chemistry to the method that the back side optimizes processing, it can be by the texturing of silicon wafer back surface
Flannelette is skimmed, and back surface is planarized, even up to mirror effect, to reduce the specific area of back surface.It is blunt that this will promote battery
Change effect, and the backside reflection rate of light can be increased using mirror-reflection principle, reduces the transmission loss of light, while can improve
The quality of the metal back electric field of subsequent deposition.During common process, silicon chip back side and edge are aoxidized using nitric acid, form oxygen
SiClx, hydrofluoric acid and oxidation pasc reaction generate complex compound hexafluorosilicic acid, thus make front and insulating backside, later use highly basic
Selective corrosion is realized to the polishing of the selectivity of cell backside.
For example, Chinese patent literature CN109285772A discloses a kind of polycrystalline silicon solar crystal-silicon battery slice chain type back throwing
Light method and its equipment, which includes the first etching device, the second etching device, band liquid idler wheel and polishes idler wheel, and device
The middle mixed solution using nitric acid and hydrofluoric acid performs etching silicon wafer, and not only sour usage amount is larger, but also equipment was run
Cheng Zhonghui generates NOx, but there is no to NO in existing chain type back polishing production linexThe device being effectively treated, thus can
So that NOxProduction line and environment are caused greatly to pollute.
Summary of the invention
Therefore, it is also easy to produce the technical problem to be solved in the present invention is that overcoming in crystal-silicon battery slice production in the prior art
NOx, the problem of polluting environment, to provide a kind of crystal-silicon battery slice chain type alkali polishing production line and chain type alkali polishing method.
To achieve the above object, the present invention provides a kind of crystal-silicon battery slice chain type alkali polishing production line, comprising:
Fully sheathed case, be successively arranged in fully sheathed case interconnected feeding system, the first pickling system, the first water wash system,
First polishing system, the second polishing system, the second water wash system, the second pickling system, third water wash system, drying system and go out
Material system；
First pickling system and the second pickling system include storage acid tank, and storage acid tank is provided with hydrofluoric acid solution.
Preferably, pickling soaking compartment is equipped in the middle part of the first pickling system and the second pickling system, on pickling soaking compartment
Equipped with pickling conveying roller, pickling soaking compartment is respectively equipped with sour overflow launder, sour overflow launder along the both ends of crystal-silicon battery slice conveying direction
It is connect with storage acid tank with pickling soaking compartment.
Preferably, it is equipped with washing soaking compartment in the middle part of the first water wash system, the second water wash system and third water wash system,
It washes soaking compartment and is equipped with washing conveying roller, washing conveying roller is equipped with squeeze roll(s), successively sets above squeeze roll(s) along conveying direction
There is multiple groups spray equipment, washing soaking compartment is connect with water storage tank, and water storage tank is provided with pure water.
Preferably, feeding bracket is equipped in the middle part of feeding system, feeding bracket is equipped with feeding conveying roller, feeding conveying roller
On along conveying direction be equipped with an at least row the regulatory wheel of feeding.
Preferably, it is equipped with polishing soaking compartment in the middle part of the first polishing system and the second polishing system, polished on soaking compartment
Equipped with polishing conveying roller, soaking compartment is polished along the both ends of crystal-silicon battery slice conveying direction and is respectively equipped with polishing fluid overflow launder, is polished
Liquid back pipe is equipped with below hydrorrhea chute, the liquid back pipe other end is connected with liquid-storage system, and polishing fluid overflow launder is far from polishing conveying roller
Downside is equipped with liquid branch pipe, and liquid branch pipe liquid feeding end is equipped with liquid discharging box out, and liquid discharging box is connect with liquid-storage system.
Preferably, liquid-storage system includes the first reservoir set gradually along crystal-silicon battery slice conveying direction, the second storage
Having heaters, the second liquid storage is respectively set in the first reservoir, the second reservoir and third reservoir in liquid bath and third reservoir
It is equipped with temperature sensor in slot, is respectively arranged with potassium hydroxide solution in the first reservoir, the second reservoir and third reservoir.
Preferably, drying support is equipped in the middle part of drying system, drying support is equipped with drying conveying roller, dries conveying roller
Upper and lower two sides symmetric position is equipped with a pair of of hot wind knife.
Preferably, discharging support is equipped in the middle part of discharge system, discharging support is equipped with discharging conveying roller, and discharge conveying roller
On along conveying direction be equipped with an at least row the regulatory wheel of discharging, discharging support end be equipped with blow tank.
A kind of crystal-silicon battery slice chain type alkali polishing method, comprising the following steps:
(a) it sprays water the crystal-silicon battery slice front after diffusion to form moisture film protective layer；
(b) crystal-silicon battery slice surrounding and the back side are contacted to the oxidation at removal crystal silicon surrounding and the back side with hydrofluoric acid solution
Layer；
(c) crystal-silicon battery slice surrounding and the back side are soaked in water, front is eluted with water；
(d) that the surrounding through step (c) treated crystal-silicon battery slice and the back side are contacted progress with potassium hydroxide solution is rotten
After erosion polishing；
(e) step (c) is repeated；
(f) it will be cleaned through step (e) treated crystal-silicon battery slice with hydrofluoric acid, and remove phosphorosilicate glass；
(g) step (c) is repeated；
(h) the polished crystal-silicon battery slice of alkali will be obtained after step (g) treated crystal-silicon battery slice drying.
Technical solution of the present invention has the advantages that
1. crystal-silicon battery slice chain type alkali polishing production line provided by the invention is made in acid cleaning process using only hydrofluoric acid solution
For cleaning solution, NO is avoided from sourcexGeneration, and will not discharge containing HNO3Waste water, can effectively solve the problem that the crystal silicon sun
Problem of environmental pollution in energy cell manufacturing process.In addition, original pickling three times is changed to pickling twice, acid is effectively reduced
Usage amount.
2. being all provided in crystal-silicon battery slice chain type alkali polishing production line provided by the invention, pickling soaking compartment and polishing soaking compartment
There is corresponding overflow launder, hydrofluoric acid solution and potassium hydroxide solution can be effectively prevent to move and overflow with crystal-silicon battery slice, led
It is caused to cause to corrode to other positions of equipment.
3. crystal-silicon battery slice chain type alkali polishing method provided by the invention, acid cleaning process only uses hydrofluoric acid solution, from source
The generation of NOx is avoided on head, and will not be discharged containing HNO3Waste water, reduce environmental pollution, while avoiding a variety of acid
When liquid mixes the problem of heat production, it is not necessarily to refrigeration equipment and cooling water in acid cleaning process, can reduce equipment cost and be produced into
This.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is crystal-silicon battery slice chain type alkali polishing production line schematic diagram of the invention；
Fig. 2 is the enlarged diagram of the first pickling system in Fig. 1；
Fig. 3 is the enlarged diagram of discharge system in Fig. 1.
Description of symbols:
1, fully sheathed case；2, feeding system；3, the first pickling system；4, the first water wash system；5, the first polishing system；6,
Two polishing systems；7, the second water wash system；8, the second pickling system；9, third water wash system；10, drying system；11, discharging system
System；12, acid tank is stored up；13, pickling soaking compartment；14, pickling conveying roller；15, sour overflow launder；16, acid tube is returned；17, sour device is sent；
18, sour pump is sent；19, soaking compartment is washed；20, conveying roller is washed；21, squeeze roll(s)；22, the first spray equipment；23, the second spray dress
It sets；24, third spray equipment；25, the 4th spray equipment；26, water-stop sheet；27, dewatering outlet；28, water return outlet；29, water sending device；
30, flow pipe；31, conveying pump；32, water storage tank；33, feeding bracket；34, feeding conveying roller；35, the regulatory wheel of feeding；36, it polishes
Soaking compartment；37, conveying roller is polished；38, polishing fluid overflow launder；39, liquid back pipe；40, liquid-storage system；41, go out liquid branch pipe；42, go out
Fluid apertures；43, liquid discharging box；44, filter vat；45, infusion pump；46, the first reservoir；47, the second reservoir；48, third reservoir；
49, heater；50, temperature sensor；51, drying support；52, conveying roller is dried；53, hot wind knife；54, hot wind filter；55,
High pressure blower；56, discharging support；57, discharge conveying roller；58, discharge regulatory wheel；59, blow tank.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " second ",
" third " is used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
As long as in addition, the non-structure each other of technical characteristic involved in invention described below different embodiments
It can be combined with each other at conflict.
A kind of specific embodiment of crystal-silicon battery slice chain type alkali polishing production line as shown in Figs. 1-3, comprising: closing
Case 1 is successively arranged interconnected feeding system 2, the first pickling system 3, the polishing of the first water wash system 4, first in fully sheathed case 1
System 5, the second polishing system 6, the second water wash system 7, the second pickling system 8, third water wash system 9, drying system 10 and go out
Material system 11；First pickling system 3 and the second pickling system 8 include storage acid tank 12, and storage acid tank 12 is provided with hydrofluoric acid solution.
Hydrofluoric acid solution is used only as cleaning solution in acid cleaning process, the generation of NOx is avoided from source, and will not discharge containing
HNO3Waste water, while avoid a variety of acid solutions mixing when heat production the problem of, in acid cleaning process be not necessarily to refrigeration equipment and cooling
Water can reduce equipment cost and production cost.
It is equipped with pickling soaking compartment 13 in the middle part of first pickling system 3 and the second pickling system 8, pickling soaking compartment 13 is equipped with
Pickling conveying roller 14, pickling soaking compartment 13 are respectively equipped with sour overflow launder 15 along the both ends of crystal-silicon battery slice conveying direction, prevent hydrogen
Fluorspar acid solution is moved with crystal-silicon battery slice overflows pickling soaking compartment 13, avoids hydrofluoric acid solution from corroding equipment, under sour overflow launder 15
Side is connected with back acid tube 16, returns 16 other end of acid tube and is connected with storage acid tank 12, is used as and send equipped with two groups below pickling soaking compartment 13
The acid storage tank of sour device 17 send sour device 17 to be connected with and send acid pump 18, send acid 18 other ends of pump to be connected with storage acid tank 12, is sending acid
Under the action of pump 18, the hydrofluoric acid solution stored up in acid tank 12 is sent sour device to be delivered in pickling soaking compartment 13.Sour overflow launder 15
The acid solution of middle spilling can be returned acid tube 16 and be come back in storage acid tank 12, so that hydrofluoric acid solution can recycle, into
One step reduces production cost.
Washing soaking compartment 19, washing are equipped in the middle part of first water wash system 4, the second water wash system 7 and third water wash system 9
Soaking compartment 19 is equipped with washing conveying roller 20, and washing conveying roller 20 is equipped with squeeze roll(s) 21, and 21 top of squeeze roll(s) is along crystal silicon battery
Piece conveying direction is successively arranged four groups of spray equipments, including the first spray equipment 22, the second spray equipment 23, third spray equipment
24 and the 4th spray equipment 25, the washing soaking compartment 19 between the first spray equipment 22 and the second spray equipment 23 be equipped with water proof
Plate 26, water-stop sheet 26 correspond to and are equipped with dewatering outlet 27 below the washing soaking compartment 19 of 22 side of the first spray equipment, and water-stop sheet 26 is another
Side is equipped with water return outlet 28, and water return outlet 28 is connect with water storage tank 32, washes and is equipped with water sending device 29 below conveying roller 20, water is sent to fill
It sets 29 and is connected with flow pipe 30,30 other end of flow pipe is connected with conveying pump 31, and 31 other end of conveying pump is connect with water storage tank 32,
Water storage tank 32 is provided with pure water, and the water flowed out in the first spray equipment 22 is straight through dewatering outlet 27 after cleaning to crystal-silicon battery slice
Run in, the water flowed out in the second spray equipment 23, third spray equipment 24 and the 4th spray equipment 25 to crystal-silicon battery slice into
Successively water storage tank 32 is flowed back to through water sending device 29, flow pipe 30 and conveying pump 31 after row cleaning to be recycled.
Feeding bracket 33 is equipped in the middle part of feeding system 2, feeding bracket 33 is equipped with feeding conveying roller 34, feeding conveying roller 34
On along conveying direction be equipped with three row's feedings it is regulatory wheel 35, guarantee that each crystal-silicon battery slice can successively travel forward, different crystal silicons
It will not overlap between cell piece.
Polishing soaking compartment 36 is equipped in the middle part of first polishing system 5 and the second polishing system 6, polishing soaking compartment 36 is equipped with
Conveying roller 37 is polished, soaking compartment 36 is polished along the both ends of crystal-silicon battery slice conveying direction and is respectively equipped with polishing fluid overflow launder 38, protect
Card polishing fluid will not be spilt into the movement of crystal-silicon battery slice outside polishing soaking compartment 36, avoid polishing corrosion equipment, polishing
Liquid back pipe 39 is equipped with below hydrorrhea chute 38,39 other end of liquid back pipe is connected with liquid-storage system 40, and liquid-storage system 40 includes successively
The first reservoir 46, the second reservoir 47 and the third reservoir 48 being arranged, the first reservoir 46, the second reservoir 47, third
Having heaters 49 is respectively set in reservoir 48, is equipped with temperature sensor 50, the first reservoir 46, second in the second reservoir 47
It is respectively arranged with potassium hydroxide solution in reservoir 47, third reservoir 48, only potassium hydroxide solution is added in the second reservoir 47
To 60~90 DEG C, the first reservoir 46 and third reservoir 48 are only recycled and are shunted to potassium hydroxide solution heat, can reduce hydrogen
Corrosion of the potassium oxide solution to integral device, separate polish of polishing fluid overflow launder 38 are equipped with liquid branch pipe 41 on the downside of conveying roller 37,
Liquid branch pipe 41 is equipped with fluid hole 42 out, and liquid branch pipe liquid feeding end is equipped with liquid discharging box 43 out, and liquid discharging box 43 is connected with filter vat 44, mistake
Lauter tub 44 is connected with infusion pump 45, and 45 other end of infusion pump is connect with liquid-storage system 40.Solution in polishing fluid overflow launder 38 according to
It is secondary to enter in liquid-storage system 40 through liquid branch pipe 41, liquid discharging box 43, filter vat 44 and infusion pump 45 out, polishing fluid is recycled
It recycles, economizes on resources.
Drying support 51 is equipped in the middle part of drying system 10, drying support 51 is equipped with drying conveying roller 52, dries conveying roller
About 52 two sides symmetric positions are equipped with a pair of of hot wind knife 53, and hot wind knife 53 is connected with hot wind filter 54, and hot wind filter 54 connects
It is connected to high pressure blower 55.Crystal-silicon battery slice on drying conveying roller 52 is oven-dried under the action of a pair of of hot wind knife 53.
Discharging support 56 is equipped in the middle part of discharge system 11, discharging support 56 is equipped with discharging conveying roller 57, and discharge conveying roller
The regulatory wheel 58 of discharging for being equipped with a row along conveying direction on 57,56 end of discharging support is equipped with blow tank 59, can guarantee crystal silicon
Cell piece successively flows out, and the overlapping before crystal-silicon battery slice discharges completion is avoided to cause crystal-silicon battery slice damaged.
Crystal-silicon battery slice chain type alkali polishing method: crystal-silicon battery slice is sequentially placed upper by manual or collocation automatic sheet-feeding machine
Material system 2 sprays 50 ~, 60 DEG C of water in crystal-silicon battery slice front manually and forms moisture film protective layer；
Subsequent crystal-silicon battery slice with feeding conveying roller 34 enter the first pickling system 3, crystal-silicon battery slice surrounding and the back side with
Hydrofluoric acid solution contact in pickling soaking compartment 13, removes the oxide layer at crystal-silicon battery slice surrounding and the back side；
Subsequent crystal-silicon battery slice with pickling conveying roller 14 enter the first water wash system 4, crystal-silicon battery slice surrounding and the back side with
The water contact in soaking compartment 19 is washed, crystal-silicon battery slice front is eluted using spray equipment；
Subsequent crystal-silicon battery slice with washing conveying roller 20 enter the first polishing system 5, crystal-silicon battery slice surrounding and the back side with
60~90 DEG C of potassium hydroxide solutions contact in polishing fluid soaking compartment, carries out etch polishing, enters the second polishing system 6 afterwards and repeats
Carry out alkali polishing step；
Subsequent crystal-silicon battery slice with polishing conveying roller 37 enter the second water wash system 7, crystal-silicon battery slice surrounding and the back side with
The water contact in soaking compartment 19 is washed, crystal-silicon battery slice front is eluted using spray equipment；
Subsequent crystal-silicon battery slice with washing conveying roller 20 enter the second pickling system 8, crystal-silicon battery slice surrounding and the back side with
Hydrofluoric acid solution contact in pickling soaking compartment 13, removes the phosphorosilicate glass at crystal-silicon battery slice surrounding and the back side；
Subsequent crystal-silicon battery slice with pickling conveying roller 14 enter third water wash system 9, crystal-silicon battery slice surrounding and the back side with
The water contact in soaking compartment 19 is washed, crystal-silicon battery slice front is eluted using spray equipment；
Subsequent crystal-silicon battery slice, which enters drying system 10 with washing conveying roller 20, to carry out after drying operation through discharge system 11,
It sends out production line and obtains the polished crystal-silicon battery slice of alkali.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (9)
1. a kind of crystal-silicon battery slice chain type alkali polishing production line characterized by comprising
Fully sheathed case (1) is successively arranged interconnected feeding system (2), the first pickling system (3), the in the fully sheathed case (1)
One water wash system (4), the first polishing system (5), the second polishing system (6), the second water wash system (7), the second pickling system
(8), third water wash system (9), drying system (10) and discharge system (11)；
First pickling system (3) and second pickling system (8) include storage acid tank (12), and the storage acid tank (12) is interior
Equipped with hydrofluoric acid solution.
2. crystal-silicon battery slice chain type alkali polishing production line according to claim 1, which is characterized in that first pickling system
It is equipped with pickling soaking compartment (13) in the middle part of system (3) and second pickling system (8), the pickling soaking compartment (13) is equipped with acid
It washes conveying roller (14), the pickling soaking compartment (13) is respectively equipped with sour overflow launder along the both ends of crystal-silicon battery slice conveying direction
(15), the sour overflow launder (15) and the pickling soaking compartment (13) are connect with the storage acid tank (12).
3. crystal-silicon battery slice chain type alkali polishing production line according to claim 1 or 2, which is characterized in that first water
It washes in the middle part of system (4), second water wash system (7) and the third water wash system (9) and is equipped with washing soaking compartment (19), institute
It states washing soaking compartment (19) and is equipped with washing conveying roller (20), the washing conveying roller (20) is equipped with squeeze roll(s) (21), described
It is successively arranged multiple groups spray equipment along conveying direction above squeeze roll(s) (21), the washing soaking compartment (19) and water storage tank (32) are even
It connects, the water storage tank (32) is provided with pure water.
4. crystal-silicon battery slice chain type alkali polishing production line according to claim 1-3, which is characterized in that described
Feeding bracket (33) are equipped in the middle part of feeding system (2), the feeding bracket (33) is equipped with feeding conveying roller (34), the feeding
The regulatory wheel (35) of feeding of an at least row is equipped on conveying roller (34) along conveying direction.
5. crystal-silicon battery slice chain type alkali polishing production line according to claim 1-4, which is characterized in that described
It is equipped in the middle part of first polishing system (5) and the second polishing system (6) and polishes soaking compartment (36), on the polishing soaking compartment (36)
Equipped with polishing conveying roller (37), the polishing soaking compartment (36) is respectively equipped with polishing fluid along the both ends of crystal-silicon battery slice conveying direction
Overflow launder (38), polishing fluid overflow launder (38) lower section are equipped with liquid back pipe (39), and liquid back pipe (39) other end is connected with
Liquid-storage system (40), the polishing fluid overflow launder (38) are equipped with liquid branch pipe (41) far from polishing conveying roller (37) downside,
Liquid branch pipe (41) liquid feeding end out is equipped with liquid discharging box (43), and the liquid discharging box (43) connect with liquid-storage system (40).
6. crystal-silicon battery slice chain type alkali polishing production line according to claim 5, which is characterized in that the liquid-storage system
It (40) include the first reservoir (46), the second reservoir (47) and third liquid storage set gradually along crystal-silicon battery slice conveying direction
Slot (48), first reservoir (46), second reservoir (47) and the third reservoir (48) are interior to be respectively arranged with
Heater (49), second reservoir (47) is interior to be equipped with temperature sensor (50), first reservoir (46), described second
Potassium hydroxide solution is respectively arranged in reservoir (47) and the third reservoir (48).
7. crystal-silicon battery slice chain type alkali polishing production line according to claim 1-6, which is characterized in that described
Drying support (51) are equipped in the middle part of drying system (10), the drying support (51) is equipped with drying conveying roller (52), the baking
Two sides symmetric position is equipped with a pair of of hot wind knife (53) to dry conveying roller (52) up and down.
8. crystal-silicon battery slice chain type alkali polishing production line according to claim 1-7, which is characterized in that described
Discharging support (56) are equipped in the middle part of discharge system (11), the discharging support (56) is equipped with discharging conveying roller (57), it is described go out
Expect the regulatory wheel (58) of discharging for being equipped with an at least row on conveying roller (57) along conveying direction, discharging support (56) end is equipped with
Blow tank (59).
9. a kind of crystal-silicon battery slice chain type alkali polishing method, which comprises the following steps:
(a) it sprays water the crystal-silicon battery slice front after diffusion to form moisture film protective layer；
(b) crystal-silicon battery slice surrounding and the back side are contacted to the oxide layer at removal crystal silicon surrounding and the back side with hydrofluoric acid solution；
(c) crystal-silicon battery slice surrounding and the back side are soaked in water, front is eluted with water；
(d) by through step (c) treated crystal-silicon battery slice surrounding and the back side contacted with potassium hydroxide solution and carry out corrosion throwing
After light；
(e) step (c) is repeated；
(f) it will be cleaned through step (e) treated crystal-silicon battery slice with hydrofluoric acid, and remove phosphorosilicate glass；
(g) step (c) is repeated；
(h) the polished crystal-silicon battery slice of alkali will be obtained after step (g) treated crystal-silicon battery slice drying.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768554A (en) * | 2020-12-30 | 2021-05-07 | 横店集团东磁股份有限公司 | Alkali polishing method based on back full-contact passivation material, crystalline silicon solar cell and preparation method |
| CN113451440A (en) * | 2021-06-10 | 2021-09-28 | 浙江艾能聚光伏科技股份有限公司 | Production method of black silicon battery piece |
| CN113539813A (en) * | 2021-06-08 | 2021-10-22 | 天津爱旭太阳能科技有限公司 | Monocrystalline silicon piece back polishing method and silicon piece |
| CN113690342A (en) * | 2021-08-11 | 2021-11-23 | 浙江中晶新能源股份有限公司 | Chain type back polishing equipment for polycrystalline silicon battery piece |
| CN114807949A (en) * | 2022-03-10 | 2022-07-29 | 宁波市和明瑞电器有限公司 | Alkali polishing solution, alkali polishing process and alkali polishing machine |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103361739A (en) * | 2013-07-08 | 2013-10-23 | 浙江晶科能源有限公司 | Method for implementing back polishing in crystalline silicon solar battery production |
| CN104051564A (en) * | 2013-03-14 | 2014-09-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wet etching process and equipment, and solar cell and manufacturing method thereof |
| CN104143591A (en) * | 2014-08-14 | 2014-11-12 | 无锡尚品太阳能电力科技有限公司 | Solar cell back side polishing process utilizing tetramethylammonium hydroxide solution |
| CN104505425A (en) * | 2014-10-24 | 2015-04-08 | 横店集团东磁股份有限公司 | Method for preparing solar monocrystal back polished cell piece |
| CN104900759A (en) * | 2015-05-27 | 2015-09-09 | 东方日升新能源股份有限公司 | Basic etching back-polishing process for crystalline silicon battery |
| WO2017004958A1 (en) * | 2015-07-09 | 2017-01-12 | 苏州阿特斯阳光电力科技有限公司 | Preparation method for local back contact solar cell |
| CN106449393A (en) * | 2016-10-27 | 2017-02-22 | 太极能源科技（昆山）有限公司 | Solar cell etching equipment and manufacturing method |
| CN207217477U (en) * | 2017-07-14 | 2018-04-10 | 无锡琨圣科技有限公司 | A kind of liquid flooding protects system |
| CN108091557A (en) * | 2017-11-29 | 2018-05-29 | 江苏彩虹永能新能源有限公司 | A kind of rear surface of solar cell etching technics |
| CN210136844U (en) * | 2019-07-30 | 2020-03-10 | 苏州昊建自动化系统有限公司 | Chain type alkali polishing production line for crystalline silicon battery piece |
-
2019
- 2019-07-30 CN CN201910697652.8A patent/CN110534408A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051564A (en) * | 2013-03-14 | 2014-09-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wet etching process and equipment, and solar cell and manufacturing method thereof |
| CN103361739A (en) * | 2013-07-08 | 2013-10-23 | 浙江晶科能源有限公司 | Method for implementing back polishing in crystalline silicon solar battery production |
| CN104143591A (en) * | 2014-08-14 | 2014-11-12 | 无锡尚品太阳能电力科技有限公司 | Solar cell back side polishing process utilizing tetramethylammonium hydroxide solution |
| CN104505425A (en) * | 2014-10-24 | 2015-04-08 | 横店集团东磁股份有限公司 | Method for preparing solar monocrystal back polished cell piece |
| CN104900759A (en) * | 2015-05-27 | 2015-09-09 | 东方日升新能源股份有限公司 | Basic etching back-polishing process for crystalline silicon battery |
| WO2017004958A1 (en) * | 2015-07-09 | 2017-01-12 | 苏州阿特斯阳光电力科技有限公司 | Preparation method for local back contact solar cell |
| CN106449393A (en) * | 2016-10-27 | 2017-02-22 | 太极能源科技（昆山）有限公司 | Solar cell etching equipment and manufacturing method |
| CN207217477U (en) * | 2017-07-14 | 2018-04-10 | 无锡琨圣科技有限公司 | A kind of liquid flooding protects system |
| CN108091557A (en) * | 2017-11-29 | 2018-05-29 | 江苏彩虹永能新能源有限公司 | A kind of rear surface of solar cell etching technics |
| CN210136844U (en) * | 2019-07-30 | 2020-03-10 | 苏州昊建自动化系统有限公司 | Chain type alkali polishing production line for crystalline silicon battery piece |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768554A (en) * | 2020-12-30 | 2021-05-07 | 横店集团东磁股份有限公司 | Alkali polishing method based on back full-contact passivation material, crystalline silicon solar cell and preparation method |
| CN113539813A (en) * | 2021-06-08 | 2021-10-22 | 天津爱旭太阳能科技有限公司 | Monocrystalline silicon piece back polishing method and silicon piece |
| CN113539813B (en) * | 2021-06-08 | 2023-01-31 | 天津爱旭太阳能科技有限公司 | Monocrystalline silicon piece back polishing method and silicon piece |
| CN113451440A (en) * | 2021-06-10 | 2021-09-28 | 浙江艾能聚光伏科技股份有限公司 | Production method of black silicon battery piece |
| CN113690342A (en) * | 2021-08-11 | 2021-11-23 | 浙江中晶新能源股份有限公司 | Chain type back polishing equipment for polycrystalline silicon battery piece |
| CN114807949A (en) * | 2022-03-10 | 2022-07-29 | 宁波市和明瑞电器有限公司 | Alkali polishing solution, alkali polishing process and alkali polishing machine |
| CN114807949B (en) * | 2022-03-10 | 2022-11-08 | 宁波市和明瑞电器有限公司 | Alkali polishing solution, alkali polishing process and alkali polishing machine |
| CN116454174A (en) * | 2023-06-16 | 2023-07-18 | 福建金石能源有限公司 | Back polishing method of back contact battery |
| CN116454174B (en) * | 2023-06-16 | 2023-09-08 | 福建金石能源有限公司 | Back polishing method of back contact battery |
| CN116741889A (en) * | 2023-08-10 | 2023-09-12 | 苏州昊建自动化系统有限公司 | Device for removing BSG on surface of silicon wafer |
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