CN103715303B - A kind of diffusion method improving solar cell and filling - Google Patents
A kind of diffusion method improving solar cell and filling Download PDFInfo
- Publication number
- CN103715303B CN103715303B CN201310722031.3A CN201310722031A CN103715303B CN 103715303 B CN103715303 B CN 103715303B CN 201310722031 A CN201310722031 A CN 201310722031A CN 103715303 B CN103715303 B CN 103715303B
- Authority
- CN
- China
- Prior art keywords
- diffusion
- nitrogen
- low temperature
- flow
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 92
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 118
- 229910052757 nitrogen Inorganic materials 0.000 claims description 59
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 33
- 239000001301 oxygen Substances 0.000 claims description 33
- 229910052760 oxygen Inorganic materials 0.000 claims description 33
- 239000011574 phosphorus Substances 0.000 claims description 32
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical group ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- 238000002203 pretreatment Methods 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 125000004437 phosphorous atom Chemical group 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 4
- 230000009466 transformation Effects 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention discloses a kind of diffusion method improving solar cell and filling, belong to solar cell making process technical field, manufacture craft comprises low temperature diffusion, high temperature advances, characterized by further comprising two low temperature diffusion steps, the temperature in described two low temperature diffusion steps is 700-800 DEG C; After low temperature diffusion and high temperature advance, carrying out two low temperature diffusion, phosphorus atom activity weakens, and phosphorus atom is difficult to can not be impacted by square resistance to silicon chip internal divergence; When not changing knot and be dark, it is possible to improve the impurity concentration of silicon chip surface, contribute to improving the filling effect of solar battery sheet, it is to increase the photoelectric transformation efficiency of solar battery sheet, thus improve the performance of solar cell.
Description
Technical field
The invention belongs to solar cell making process technical field.
Background technology
The process making solar cell generally comprises ultrasonic cleaning, making herbs into wool, diffusion, etches, goes the technological operations such as phosphorosilicate glass, antireflective coating, silk screen printing, testing, sorting. Wherein, diffusion, also claims diffusion, is the key link preparing solar cell.
Diffusion refers to by P-type silicon sheet surface doping N-type impurity, forming the process of P-N junction; Oxygen, the nitrogen that carries phosphorus oxychloride are passed in the diffusion furnace of high temperature by general employing according to a certain percentage, form the zone of oxidation containing phosphorus at silicon chip surface; At high temperature, phosphorus atom is from this zone of oxidation is diffused in silicon chip, thus the N-type region of the surface formation one layer of heavy doping in P-type silicon, finally form emitter junction. Now, the phosphorus atom of silicon chip surface is dense, the movable aggravation of atom during high temperature, this region can cause lattice imperfection owing to electricity torpescence phosphorus atom is in interstitial void position, and do not mate with the atomic radius of silicon due to phosphorus, the phosphorus of high density also can cause lattice mismatch, therefore 0.2In the battery top layer of about m, minority carrier lifetime is lower, and the photoelectric current of battery is exported very micro-by the photo-generated carrier that the shortwave photon that top layer absorbs produces, and this layer becomes " dead layer ".
A kind of effective ways improving the efficiency of crystal-silicon solar cell are the square resistances after improving diffusion, and wherein doing high square resistance is exactly one wherein. The diffusion link of current silicon solar cell, diffusion way is divided into three kinds: 1, High temperature diffusion, high temperature advance; 2, low temperature diffusion, high temperature advances; 3, low temperature diffusion, high temperature advances, High temperature diffusion, wherein High temperature diffusion depositing temperature be 820-900 DEG C, high temperature advance temperature to be 820-900 DEG C, low temperature diffusion depositing temperature be 700-800 DEG C, battery all can be accomplished high square resistance by these three kinds of methods. But advancing link at high temperature, phosphorus atom activity aggravation, easily causes lattice imperfection; Fltting speed is fast simultaneously, reduces surface concn; If under the high temperature conditions, too much sedimentary phosphor source, certainly will reduce square resistance; Accelerate phosphorus source, surface to silicon substrate surface diffusion, strengthen knot dark, affect battery efficiency.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of diffusion method improving solar cell and filling, and contributes to improving the filling effect of solar battery sheet, it is to increase the photoelectric transformation efficiency of solar battery sheet, thus improves the performance of solar cell.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
Improving the diffusion method that solar cell is filled, its making step comprises silicon chip pre-treatment low temperature diffusion high temperature and advances out boat, it is characterised in that also comprise two low temperature diffusion; Described two low temperature diffusion after high temperature forward step, go out boat before carry out; Temperature during described two low temperature diffusion is 700 DEG C-800 DEG C.
Concrete, temperature during described two low temperature diffusion is 750 DEG C;
During described two low temperature diffusion, after temperature-stable, leading to and carry out constant source diffusion into taking phosphorus source nitrogen, oxygen and nitrogen, diffusion time is 6-8min; The described flow taking phosphorus source nitrogen is 600-800sccm, and the flow of oxygen is 600-800sccm, and the flow of nitrogen is 7-8slm;
During a described low temperature diffusion, being put in diffusion furnace by pretreated silicon chip, be warming up to 700-800 DEG C, lead to and carry out constant source diffusion into taking phosphorus source nitrogen, oxygen and nitrogen, diffusion time is 14-16min; The described flow taking phosphorus source nitrogen is 1200-1600sccm, and the flow of oxygen is 1200-1300sccm, and the flow of nitrogen is 7-8slm;
When described high temperature advances, stopping leading to into taking phosphorus source nitrogen, temperature is risen to 820-850 DEG C, leads to into oxygen and nitrogen simultaneously, advance, the flow of oxygen is 900-1200sccm, and the flow of nitrogen is 7-8slm, and diffusion time is 14-16min;
Described phosphorus source is phosphorus oxychloride, and source temperature is constant in 19-21 DEG C.
The square resistance of the parameter settings such as gas flow in above-mentioned manufacture craft process, diffusion time and made battery has relation, and the present invention is to make square resistance as the battery of 80 ohm.
The useful effect adopting technique scheme to produce is: after low temperature diffusion and high temperature advance, carrying out two low temperature diffusion, phosphorus atom activity weakens, and phosphorus atom is difficult to can not be impacted by square resistance to silicon chip internal divergence; When not changing knot and be dark, it is possible to improve the impurity concentration of silicon chip surface, contribute to improving the filling effect of solar battery sheet, it is to increase the photoelectric transformation efficiency of solar battery sheet, thus improve the performance of solar cell.
Embodiment
Below in conjunction with embodiment, the present invention is further detailed explanation.
Embodiment 1
To make square resistance as the battery of 80 ohm, the diffusion technique of this solar cell comprises:
Step S1, grows SiO on the surface of silicon chip2Layer, obtains pre-treatment silicon chip;
Step S2, a low temperature diffusion, is put in diffusion furnace by pretreated silicon chip, is warming up to 800 DEG C, leads to and carries out constant source diffusion into taking phosphorus source nitrogen, oxygen and nitrogen, and diffusion time is 14-16min; The described flow taking phosphorus source nitrogen is 1200-1600sccm, and the flow of oxygen is 1200-1300sccm, and the flow of nitrogen is 7-8slm;
Step S3, high temperature advances, and stops leading to into taking phosphorus source nitrogen, and it is 830 DEG C that temperature rises to temperature, leads to into oxygen and nitrogen simultaneously, advances, and the flow of oxygen is 900-1200sccm, and the flow of nitrogen is 7-8slm, and diffusion time is 14-16min;
Step S4, two low temperature diffusion, are cooled to 800 DEG C, after temperature-stable, lead to and carry out constant source diffusion into taking phosphorus source nitrogen, oxygen and nitrogen, and diffusion time is 6-8min; The described flow taking phosphorus source nitrogen is 600-800sccm, and the flow of oxygen is 600-800sccm, and the flow of nitrogen is 7-8slm.
Step S5, boiler tube blows to be swept, and goes out boat.
Embodiment 2
The difference of itself and embodiment 1 is: step S4, the temperature of two low temperature diffusion is 750 DEG C.
Embodiment 3
The difference of itself and embodiment 1 is: step S4, the temperature of two low temperature diffusion is 700 DEG C.
Following comparative example is the existing method of diffusion of three in background technology kind.
Comparative example 1
Carrying out High temperature diffusion and high temperature advances two steps, its manufacture craft comprises:
Step S1, grows SiO on the surface of silicon chip2Layer, obtains pre-treatment silicon chip;
Step S2, High temperature diffusion, is put in diffusion furnace by pretreated silicon chip, and temperature rises to 830 DEG C, leads to and carries out constant source diffusion into taking phosphorus source nitrogen, oxygen and nitrogen, and diffusion time is 14-16min; The described flow taking phosphorus source nitrogen is 1200-1600sccm, and the flow of oxygen is 1200-1300sccm, and the flow of nitrogen is 7-8slm;
Step S3, high temperature advances, and stops leading to into taking phosphorus source nitrogen, and it is 830 DEG C that temperature rises to temperature, leads to into oxygen and nitrogen simultaneously, advances, and the flow of oxygen is 900-1200sccm, and the flow of nitrogen is 7-8slm, and diffusion time is 14-16min;
Step S5, boiler tube blows to be swept, and goes out boat.
Comparative example 2
Carrying out low temperature diffusion and high temperature advances two steps, its manufacture craft comprises:
Step S1, grows SiO on the surface of silicon chip2Layer, obtains pre-treatment silicon chip;
Step S2, low temperature diffusion, is put in diffusion furnace by pretreated silicon chip, and temperature rises to 800 DEG C, leads to and carries out constant source diffusion into taking phosphorus source nitrogen, oxygen and nitrogen, and diffusion time is 14-16min; The described flow taking phosphorus source nitrogen is 1200-1600sccm, and the flow of oxygen is 1200-1300sccm, and the flow of nitrogen is 7-8slm;
Step S3, high temperature advances, and stops leading to into taking phosphorus source nitrogen, and it is 830 DEG C that temperature rises to temperature, leads to into oxygen and nitrogen simultaneously, advances, and the flow of oxygen is 900-1200sccm, and the flow of nitrogen is 7-8slm, and diffusion time is 14-16min;
Step S5, boiler tube blows to be swept, and goes out boat.
Comparative example 3
Carrying out low temperature diffusion, high temperature propelling and High temperature diffusion three steps, its manufacture craft comprises:
Step S1, grows SiO on the surface of silicon chip2Layer, obtains pre-treatment silicon chip;
Step S2, low temperature diffusion, is put in diffusion furnace by pretreated silicon chip, and temperature rises to 800 DEG C, leads to and carries out constant source diffusion into taking phosphorus source nitrogen, oxygen and nitrogen, and diffusion time is 14-16min; The described flow taking phosphorus source nitrogen is 1200-1600sccm, and the flow of oxygen is 1200-1300sccm, and the flow of nitrogen is 7-8slm;
Step S3, high temperature advances, and stops leading to into taking phosphorus source nitrogen, and it is 830 DEG C that temperature rises to temperature, leads to into oxygen and nitrogen simultaneously, advances, and the flow of oxygen is 900-1200sccm, and the flow of nitrogen is 7-8slm, and diffusion time is 14-16min;
Step S4, High temperature diffusion, keeps temperature to be 830 DEG C, after temperature-stable, leads to and carry out constant source diffusion into taking phosphorus source nitrogen, oxygen and nitrogen, and diffusion time is 6-8min; The described flow taking phosphorus source nitrogen is 600-800sccm, and the flow of oxygen is 600-800sccm, and the flow of nitrogen is 7-8slm.
Step S5, boiler tube blows to be swept, and goes out boat.
In above-mentioned experiment, film source characteristic is consistent, and at 1.5AM, envrionment temperature 25 DEG C, tests under the standard test condition of light intensity 1000w/, and the battery performance of embodiment and comparative example is as shown in the table:
Wherein, Voc is open circuit voltage, and Isc is short-circuit current, and Rs is series resistance, and Rsh is shunting resistance, and FF is packing factor, and EFF is photoelectric transformation efficiency. From test gained battery performance parameter, the filling FF of embodiment cell piece and efficiency EFF is all better than comparative example;
As can be seen from the above-described embodiment, cell piece is made by the present invention, it is possible to improve the impurity concentration of silicon chip surface, it is to increase the filling of battery, finally effectively improves cell piece efficiency.
Claims (4)
1. improving the diffusion method that solar cell is filled, its making step comprises silicon chip pre-treatment low temperature diffusion high temperature and advances out boat, it is characterised in that also comprise two low temperature diffusion; Described two low temperature diffusion after high temperature forward step, go out boat before carry out; Temperature during described two low temperature diffusion is 700 DEG C-800 DEG C; During described two low temperature diffusion, after temperature-stable, leading to and carry out constant source diffusion into taking phosphorus source nitrogen, oxygen and nitrogen, diffusion time is 6-8min; The described flow taking phosphorus source nitrogen is 600-800sccm, and the flow of oxygen is 600-800sccm, and the flow of nitrogen is 7-8slm; When described high temperature advances, stopping leading to into taking phosphorus source nitrogen, temperature is risen to 820-850 DEG C, leads to into oxygen and nitrogen, advance, the flow of oxygen is 900-1200sccm, and the flow of nitrogen is 7-8slm, and diffusion time is 14-16min.
2. a kind of diffusion method improving solar cell and filling according to claim 1, it is characterised in that temperature during described two low temperature diffusion is 750 DEG C.
3. a kind of diffusion method improving solar cell and filling according to claim 1, when it is characterized in that a described low temperature diffusion, pretreated silicon chip is put in diffusion furnace, it is warming up to 700-800 DEG C, leading to and carry out constant source diffusion into taking phosphorus source nitrogen, oxygen and nitrogen, diffusion time is 14-16min; The described flow taking phosphorus source nitrogen is 1200-1600sccm, and the flow of oxygen is 1200-1300sccm, and the flow of nitrogen is 7-8slm.
4. a kind of diffusion method improving solar cell and filling according to claim 1, it is characterised in that described phosphorus source is phosphorus oxychloride, and source temperature is constant in 19-21 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310722031.3A CN103715303B (en) | 2013-12-24 | 2013-12-24 | A kind of diffusion method improving solar cell and filling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310722031.3A CN103715303B (en) | 2013-12-24 | 2013-12-24 | A kind of diffusion method improving solar cell and filling |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103715303A CN103715303A (en) | 2014-04-09 |
| CN103715303B true CN103715303B (en) | 2016-06-01 |
Family
ID=50408108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310722031.3A Expired - Fee Related CN103715303B (en) | 2013-12-24 | 2013-12-24 | A kind of diffusion method improving solar cell and filling |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103715303B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505425B (en) * | 2014-10-24 | 2017-02-01 | 横店集团东磁股份有限公司 | Method for preparing solar monocrystal back polished cell piece |
| CN109301029A (en) * | 2018-08-01 | 2019-02-01 | 浙江启鑫新能源科技股份有限公司 | A kind of preparation method of N-type double-sided solar battery |
| CN109449246B (en) * | 2018-09-05 | 2021-03-05 | 浙江爱旭太阳能科技有限公司 | Silicon crystal sheet phosphorus diffusion method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586884A (en) * | 2012-03-06 | 2012-07-18 | 英利能源（中国）有限公司 | Polysilicon silicon chip double-diffusion manufacturing method |
| CN102820383A (en) * | 2012-09-11 | 2012-12-12 | 江阴鑫辉太阳能有限公司 | Spread method of polycrystalline silicon solar cell |
| CN103367551A (en) * | 2013-08-06 | 2013-10-23 | 中利腾晖光伏科技有限公司 | Diffusion process of crystalline silicon solar cell |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4232597B2 (en) * | 2003-10-10 | 2009-03-04 | 株式会社日立製作所 | Silicon solar cell and manufacturing method thereof |
-
2013
- 2013-12-24 CN CN201310722031.3A patent/CN103715303B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586884A (en) * | 2012-03-06 | 2012-07-18 | 英利能源（中国）有限公司 | Polysilicon silicon chip double-diffusion manufacturing method |
| CN102820383A (en) * | 2012-09-11 | 2012-12-12 | 江阴鑫辉太阳能有限公司 | Spread method of polycrystalline silicon solar cell |
| CN103367551A (en) * | 2013-08-06 | 2013-10-23 | 中利腾晖光伏科技有限公司 | Diffusion process of crystalline silicon solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103715303A (en) | 2014-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Stodolny et al. | n-Type polysilicon passivating contact for industrial bifacial n-type solar cells | |
| CN102766908B (en) | The Boron diffusion method of crystal silicon solar energy battery | |
| CN102723266B (en) | Solar battery diffusion method | |
| CN101937940B (en) | Technology for manufacturing selective emitter junction solar cell by printed phosphorous source one-step diffusion method | |
| CN102810599B (en) | Phosphorous diffusion method of polycrystalline silicon solar cell | |
| CN106057980A (en) | Phosphorus diffusion method of crystalline silicon solar cell | |
| CN111384210B (en) | High open voltage diffusion high sheet resistance process for PERC (permanent resistance resistor) overlapped SE (selective emitter current) | |
| CN105304753A (en) | N-type cell boron diffusion technology | |
| CN103715303B (en) | A kind of diffusion method improving solar cell and filling | |
| CN107293617A (en) | A kind of high-efficiency low-cost solar battery diffusion technology | |
| CN109786511B (en) | Diffusion method suitable for selective emitter | |
| CN103117329B (en) | Hetero-junctions MWT battery and preparation method thereof, slide glass boat | |
| CN105185863A (en) | Method for manufacturing solar cell | |
| CN101820023B (en) | Method for preparing selective emitter of crystal silicon solar cell | |
| CN102637778A (en) | PN junction diffusion method | |
| CN106403592A (en) | Method for reducing light attenuation of PERC solar cell | |
| Wei et al. | High efficiency n-PERT solar cells by B/P co-diffusion method | |
| CN114203920A (en) | Method for passivating inorganic perovskite solar cell by inorganic material | |
| JP5938113B1 (en) | Manufacturing method of substrate for solar cell | |
| CN105552150A (en) | Single-sided transverse gradient doped heterojunction battery and preparation method therefor | |
| CN102881766B (en) | A kind of emitter manufacture craft for solar cell | |
| KR20100093279A (en) | Manufacturing method of solar cell | |
| Maragliano et al. | Three-Dimensional Cu (InGa) Se $ _ {\bf 2} $ Photovoltaic Cells Simulations: Optimization for Limited-Range Wavelength Applications | |
| CN103227244B (en) | N-type solaode and selectivity back surface field preparation method thereof | |
| Ryu et al. | High efficiency n-type solar cells with screen-printed boron emitters and ion-implanted back surface field |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160601 Termination date: 20161224 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |