CN111477719A - Manufacturing method of full-suede N-type double-sided battery - Google Patents
Manufacturing method of full-suede N-type double-sided battery Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000009792 diffusion process Methods 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 65
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 41
- 239000011574 phosphorus Substances 0.000 claims abstract description 41
- 238000007747 plating Methods 0.000 claims abstract description 33
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052796 boron Inorganic materials 0.000 claims abstract description 32
- 238000004140 cleaning Methods 0.000 claims abstract description 32
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 238000005245 sintering Methods 0.000 claims abstract description 16
- 238000007639 printing Methods 0.000 claims abstract description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 51
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 claims description 10
- 239000002002 slurry Substances 0.000 claims description 7
- 229910015845 BBr3 Inorganic materials 0.000 claims description 5
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Substances BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 2
- 230000031700 light absorption Effects 0.000 abstract description 10
- 230000009286 beneficial effect Effects 0.000 abstract description 6
- 238000009776 industrial production Methods 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000002253 acid Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Abstract
The invention discloses a method for manufacturing a full-suede N-type double-sided battery, which comprises the following steps of: texturing, phosphorus diffusion, PSG removal, SiNx film plating on a phosphorus diffusion surface, cleaning 1, boron diffusion, cleaning 2, Al2O3 plating on the front surface, SiNx film plating on the front surface, printing and sintering. The invention adopts a double-sided suede structure, which is beneficial to improving the light absorption rate of the back of the battery and further improving the double-sided rate of the battery; the double-sided suede battery structure is adopted, the back light absorption capacity of the battery is improved, the advantages of double-sided rate and module end power gain are highlighted, the technological process from boron diffusion to phosphorus diffusion is simple to operate, the number of steps is small, conventional equipment can be used for production to the greatest extent, damage and pollution to a silicon substrate are reduced, the improvement of battery efficiency is facilitated, the production cost can be obviously reduced, and the large-scale industrial production of the N-type battery is facilitated.
Description
Technical Field
The invention relates to a production and manufacturing method of a solar cell, in particular to a manufacturing method of a full-velvet-side N-type double-sided cell.
Background
Compared with the traditional P-type solar cell, one bright point of the N-type cell is that the N-type cell can be manufactured into a double-sided cell, and the N-type cell has obvious advantages in efficiency improvement and module end power gain. However, the back of the current N-type battery is mostly acid polished, which weakens the light absorption capacity of the back and causes the double-sided rate of the battery to be lower. The manufacturing method of the full-suede N-type double-sided battery adopts the structure of double-sided suede, which is beneficial to improving the light absorption rate of the back of the battery and further improving the double-sided rate of the battery.
Disclosure of Invention
The invention aims to solve the defects in the prior art, and provides a manufacturing method of a full-suede N-type double-sided battery, which adopts a double-sided suede structure, is beneficial to improving the light absorption rate of the back of the battery and further improves the double-sided rate of the battery; the double-sided suede battery structure is adopted, the back light absorption capacity of the battery is improved, the advantages of double-sided rate and module end power gain are highlighted, the technological process from boron diffusion to phosphorus diffusion is simple to operate, the number of steps is small, conventional equipment can be used for production to the greatest extent, damage and pollution to a silicon substrate are reduced, the improvement of battery efficiency is facilitated, the production cost can be obviously reduced, and the large-scale industrial production of the N-type battery is facilitated.
In order to achieve the purpose, the invention adopts the following technical scheme:
a manufacturing method of a full-suede N-type double-sided battery comprises the following steps:
s1, texturing: taking an N-type single crystal silicon substrate, cleaning the surface of the N-type single crystal silicon substrate by using NaOH solution, and carrying out anisotropic corrosion on the surface of the N-type single crystal silicon substrate to obtain a pyramid texture surface, wherein the weight of the silicon wafer is reduced to 0.45-0.65 g;
s2, phosphorus diffusion: carrying out phosphorus diffusion on one surface of the silicon substrate by adopting a high-surface-concentration shallow junction phosphorus diffusion process to form an N-type layer;
s3, removing PSG: putting the boron diffusion N-type single crystal silicon substrate obtained in the step S2 into 3% -8% HF solution for cleaning;
s4, plating a SiNx film on the phosphorus diffusion surface: plating a SiNx film on the N-type monocrystalline silicon substrate obtained in the step S3 by using a plasma enhanced chemical vapor deposition method;
s5, cleaning 1: cleaning by using 3% HF solution to remove the plating wraparound generated during the plating of the phosphorus diffusion surface;
s6, boron diffusion: the reaction temperature is 950 ℃ and BBr3The source amount is 300sccm, the sheet resistance is 80 omega/Sqr, and BBr is carried by nitrogen in the furnace tube3Carrying out boron diffusion on one surface of the silicon substrate in a steam mode;
s7, cleaning 2: removing BSG formed by boron diffusion by HF cleaning process, and using 5% HNO3Carrying out oxidation passivation on the N-type monocrystalline silicon substrate;
s8, front side Al2O 3: plating Al on the front surface of the oxidized and passivated N-type monocrystalline silicon substrate2O3The thickness is 1-3 nm;
s9, plating a SiNx film on the front surface: plated with Al on the front side2O3The thickness of the SiNx film plated on the surface of the N-type monocrystalline silicon substrate is 70-80 nm;
s10, printing and sintering: printing slurry on the upper surface and the lower surface of an N-type single crystal silicon substrate by adopting a screen printing method to form a positive electrode and a negative electrode of the cell, and then sintering in a sintering furnace at the temperature of 700-820 ℃, thus finishing the manufacture of the N-type double-sided cell.
Preferably, in the step S2, the process temperature is 750-850 ℃, and the sheet resistance is 60-80 Ω/Sq.
Preferably, in step S4, the SiNx film plated on the phosphorus diffusion surface has a film refractive index of 2.1-2.2 and a film thickness of 80-100 nm.
Preferably, in step S6, when boron diffusion is performed, the phosphorus diffused in the back surface continues to advance to the inside at a high temperature, so that the surface concentration of the back surface decreases, the junction depth increases, and the sheet resistance increases to 90 Ω/Sq.
Preferably, in step S9, the refractive index of the N-type single crystal silicon substrate plated with the SiNx film is 2.0-2.1.
Preferably, in the step S10, L G slurry is adopted for the front and back surfaces of the N-type single crystal silicon substrate, and the peak temperature is 760 ℃.
The invention has the following beneficial effects:
1. the structure of double-sided suede is adopted, so that the light absorption rate of the back of the battery is improved, and the double-sided rate of the battery is improved;
2. the double-sided suede battery structure is adopted, so that the back light absorption capacity of the battery is improved, and the advantages of double-sided rate and module end power gain are highlighted;
3. compared with the prior art, the technological process from boron diffusion to phosphorus diffusion is simple to operate, has fewer steps, can be produced by using conventional equipment to the maximum extent, reduces damage and pollution to a silicon substrate, and is beneficial to improving the efficiency of the cell, so that the production cost can be obviously reduced, and the large-scale industrial production of the N-type cell is facilitated.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a full-matte N-type double-sided battery according to the present invention;
fig. 2 is a schematic structural diagram of a double-sided battery prepared by the method for manufacturing a full-matte N-type double-sided battery provided by the invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, but rather should be construed as broadly as the present invention is capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not represent the only embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Example 1
A manufacturing method of a full-suede N-type double-sided battery comprises the following steps:
s1, texturing: taking an N-type single crystal silicon substrate, cleaning the surface of the taken N-type single crystal silicon substrate by using NaOH solution, and carrying out anisotropic corrosion on the surface of the N-type single crystal silicon substrate to obtain a pyramid texture surface, wherein the weight of the silicon wafer is reduced to 0.45 g;
s2, phosphorus diffusion: performing phosphorus diffusion on one surface of the silicon substrate by adopting a high-surface-concentration shallow junction phosphorus diffusion process to form an N-type layer, so that the sheet resistance of the back surface after the high-temperature boron diffusion process is increased, the surface concentration is reduced, and the junction depth is increased;
s3, removing PSG: putting the boron-diffused N-type single crystal silicon substrate obtained in the step S2 into a 3% HF solution for cleaning;
s4, plating a SiNx film on the phosphorus diffusion surface: plating the SiNx film on the N-type monocrystalline silicon substrate obtained in the step S3 by using a plasma enhanced chemical vapor deposition method, wherein the SiNx film plated on the phosphorus diffusion surface requires that the film refractive index is 2.1 and the thickness is 80 nm;
s5, cleaning 1: cleaning by using 3% HF solution to remove the wraparound plating generated during the plating of the phosphorus diffusion surface and simultaneously reducing the edge leakage;
s6, boron diffusion: the reaction temperature is 950 ℃ and BBr3The source amount is 300sccm, the sheet resistance is 80 omega/Sqr, and BBr is carried by nitrogen in the furnace tube3Boron diffusion is carried out on one surface of the silicon substrate in a steam mode, and phosphorus diffused on the back surface continues to be pushed inwards at high temperature during boron diffusion, so that the surface concentration of the back surface is reduced, the junction depth is increased, and the sheet resistance is increased to 90 omega/Sq;
s7, cleaning 2: removing BSG formed by boron diffusion by HF cleaning process, and using 5% HNO3Carrying out oxidation passivation on the N-type monocrystalline silicon substrate;
s8, front side Al2O 3: plating Al on the front surface of the oxidized and passivated N-type monocrystalline silicon substrate2O3The thickness is 1-3 nm;
s9, plating a SiNx film on the front surface: plated with Al on the front side2O3The thickness of the SiNx film plated on the surface of the N-type monocrystalline silicon substrate is 70-80 nm;
s10, printing and sintering: printing slurry on the upper surface and the lower surface of an N-type single crystal silicon substrate by adopting a screen printing method to form a positive electrode and a negative electrode of the cell, and then sintering in a sintering furnace at the temperature of 700-820 ℃, thus finishing the manufacture of the N-type double-sided cell.
Example 2
A manufacturing method of a full-suede N-type double-sided battery comprises the following steps:
s1, texturing: taking an N-type single crystal silicon substrate, cleaning the surface of the N-type single crystal silicon substrate by using NaOH solution, and carrying out anisotropic corrosion on the surface of the N-type single crystal silicon substrate to obtain a pyramid texture surface, wherein the weight of the silicon wafer is reduced to 0.55 g;
s2, phosphorus diffusion: performing phosphorus diffusion on one surface of the silicon substrate by adopting a high-surface-concentration shallow junction phosphorus diffusion process to form an N-type layer, so that the sheet resistance of the back surface after the high-temperature boron diffusion process is increased, the surface concentration is reduced, and the junction depth is increased;
s3, removing PSG: putting the boron diffusion N-type single crystal silicon substrate obtained in the step S2 into a 5% HF solution for cleaning;
s4, plating a SiNx film on the phosphorus diffusion surface: plating the SiNx film on the N-type monocrystalline silicon substrate obtained in the step S3 by using a plasma enhanced chemical vapor deposition method, wherein the SiNx film plated on the phosphorus diffusion surface requires that the film refractive index is 2.15 and the thickness is 85 nm;
s5, cleaning 1: cleaning by using 3% HF solution to remove the wraparound plating generated during the plating of the phosphorus diffusion surface and simultaneously reducing the edge leakage;
s6, boron diffusion: the reaction temperature is 950 ℃ and BBr3The source amount is 300sccm, the sheet resistance is 80 omega/Sqr, and BBr is carried by nitrogen in the furnace tube3Boron diffusion is carried out on one surface of the silicon substrate in a steam mode, and phosphorus diffused on the back surface continues to be pushed inwards at high temperature during boron diffusion, so that the surface concentration of the back surface is reduced, the junction depth is increased, and the sheet resistance is increased to 90 omega/Sq;
s7, cleaning 2: removing BSG formed by boron diffusion by HF cleaning process with 5% HNO3Carrying out oxidation passivation on the N-type monocrystalline silicon substrate;
s8, front side Al2O 3: plating Al on the front surface of the oxidized and passivated N-type monocrystalline silicon substrate2O3The thickness is 2 nm;
s9, plating a SiNx film on the front surface: plated with Al on the front side2O3The thickness of the SiNx film plated on the surface of the N-type monocrystalline silicon substrate is 75nm, and the refractive index of the N-type monocrystalline silicon substrate plated with the SiNx film is 2.1;
s10, printing and sintering: and printing slurry on the upper surface and the lower surface of the N-type single crystal silicon substrate by adopting a screen printing method to form a positive electrode and a negative electrode of the cell, and sintering in a sintering furnace at the temperature of 760 ℃, thus finishing the manufacturing of the N-type double-sided cell.
Example 3
A manufacturing method of a full-suede N-type double-sided battery comprises the following steps:
s1, texturing: taking an N-type single crystal silicon substrate, cleaning the surface of the N-type single crystal silicon substrate by using NaOH solution, and carrying out anisotropic corrosion on the surface of the N-type single crystal silicon substrate to obtain a pyramid texture surface, wherein the weight of the silicon wafer is reduced to 0.65 g;
s2, phosphorus diffusion: performing phosphorus diffusion on one surface of the silicon substrate by adopting a high-surface-concentration shallow junction phosphorus diffusion process to form an N-type layer, so that the sheet resistance of the back surface after the high-temperature boron diffusion process is increased, the surface concentration is reduced, and the junction depth is increased;
s3, removing PSG: putting the boron diffusion N-type single crystal silicon substrate obtained in the step S2 into an 8% HF solution for cleaning;
s4, plating a SiNx film on the phosphorus diffusion surface: plating the SiNx film on the N-type monocrystalline silicon substrate obtained in the step S3 by using a plasma enhanced chemical vapor deposition method, wherein the SiNx film plated on the phosphorus diffusion surface requires that the film refractive index is 2.2 and the thickness is 100 nm;
s5, cleaning 1: cleaning by using 3% HF solution to remove the wraparound plating generated during the plating of the phosphorus diffusion surface and simultaneously reducing the edge leakage;
s6, boron diffusion: at a temperature of 950 ℃ and BBr3The source amount is 300sccm, the sheet resistance is 80 omega/Sqr, and BBr is carried by nitrogen in the furnace tube3Boron diffusion is carried out on one surface of the silicon substrate in a steam mode, and phosphorus diffused on the back surface continues to be pushed inwards at high temperature during boron diffusion, so that the surface concentration of the back surface is reduced, the junction depth is increased, and the sheet resistance is increased to 90 omega/Sq;
s7, cleaning 2: removing BSG formed by boron diffusion by HF cleaning process with 5% HNO3Carrying out oxidation passivation on the N-type monocrystalline silicon substrate;
s8, front side Al2O 3: plating Al on the front surface of the oxidized and passivated N-type monocrystalline silicon substrate2O3The thickness is 3 nm;
s9, plating a SiNx film on the front surface: plated with Al on the front side2O3The surface of the N-type monocrystalline silicon substrate is plated with SiNx filmThe thickness of the film is 80nm, and the refractive index of the N-type monocrystalline silicon substrate plated with the SiNx film is 2.0;
s10, printing and sintering: and printing slurry on the upper surface and the lower surface of the N-type single crystal silicon substrate by adopting a screen printing method to form a positive electrode and a negative electrode of the cell, and sintering in a sintering furnace at the temperature of 820 ℃ to finish the manufacturing of the N-type double-sided cell.
In the invention, the structure of the double-sided suede is adopted, which is beneficial to improving the light absorption rate of the back of the battery, thereby improving the double-sided rate of the battery; the double-sided suede battery structure is adopted, the back light absorption capacity of the battery is improved, the advantages of double-sided rate and module end power gain are highlighted, the technological process from boron diffusion to phosphorus diffusion is simple to operate, the number of steps is small, conventional equipment can be used for production to the greatest extent, damage and pollution to a silicon substrate are reduced, the improvement of battery efficiency is facilitated, the production cost can be obviously reduced, and the large-scale industrial production of the N-type battery is facilitated.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (6)
1. A manufacturing method of a full-suede N-type double-sided battery is characterized by comprising the following steps:
s1, texturing: taking an N-type single crystal silicon substrate, cleaning the surface of the N-type single crystal silicon substrate by using NaOH solution, and carrying out anisotropic corrosion on the surface of the N-type single crystal silicon substrate to obtain a pyramid texture surface, wherein the weight of the silicon wafer is reduced to 0.45-0.65 g;
s2, phosphorus diffusion: carrying out phosphorus diffusion on one surface of the silicon substrate by adopting a high-surface-concentration shallow junction phosphorus diffusion process to form an N-type layer;
s3, removing PSG: putting the boron diffusion N-type single crystal silicon substrate obtained in the step S2 into 3% -8% HF solution for cleaning;
s4, plating a SiNx film on the phosphorus diffusion surface: plating a SiNx film on the N-type monocrystalline silicon substrate obtained in the step S3 by using a plasma enhanced chemical vapor deposition method;
s5, cleaning 1: cleaning by using 3% HF solution to remove the plating wraparound generated during the plating of the phosphorus diffusion surface;
s6, boron diffusion: the reaction temperature is 950 ℃ and BBr3The source amount is 300sccm, the sheet resistance is 80 omega/Sqr, and BBr is carried by nitrogen in the furnace tube3Carrying out boron diffusion on one surface of the silicon substrate in a steam mode;
s7, cleaning 2: removing BSG formed by boron diffusion by HF cleaning process, and using 5% HNO3Carrying out oxidation passivation on the N-type monocrystalline silicon substrate;
s8, front side Al2O 3: plating Al on the front surface of the oxidized and passivated N-type monocrystalline silicon substrate2O3The thickness is 1-3 nm;
s9, plating a SiNx film on the front surface: plated with Al on the front side2O3The surface of the N-type monocrystalline silicon substrate is plated with a SiNx film, and the thickness is 70-80 nm;
s10, printing and sintering: printing slurry on the upper surface and the lower surface of an N-type single crystal silicon substrate by adopting a screen printing method to form a positive electrode and a negative electrode of the cell, and then sintering in a sintering furnace at the temperature of 700-820 ℃, thus finishing the manufacture of the N-type double-sided cell.
2. The method for manufacturing a full-matte N-type double-sided battery as claimed in claim 1, wherein in the step S2, the process temperature is 750-850 ℃, and the sheet resistance is 60-80 Ω/Sq.
3. The method for manufacturing an all-matte N-type double-sided battery according to claim 1, wherein in step S4, the SiNx film plated on the phosphorus diffusion surface is required to have a film refractive index of 2.1-2.2 and a film thickness of 80-100 nm.
4. The method of claim 1, wherein in step S6, the phosphorus diffused at the back surface continues to move inward at high temperature during boron diffusion, so that the surface concentration of the back surface decreases, the junction depth increases, and the sheet resistance increases to 90 Ω/Sq.
5. The method for manufacturing an all-matte N-type double-sided battery according to claim 1, wherein in step S9, the refractive index of the SiNx film-coated N-type single crystal silicon substrate is 2.0-2.1.
6. The method of claim 1, wherein in step S10, L G slurry is used for the front and back surfaces of the N-type single crystal silicon substrate, and the peak temperature is 760 ℃.
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