CN110518080B - Reworking method of acid texturing polycrystalline battery - Google Patents
Reworking method of acid texturing polycrystalline battery Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 239000002253 acid Substances 0.000 title claims abstract description 38
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000003486 chemical etching Methods 0.000 claims abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 34
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 30
- 238000006243 chemical reaction Methods 0.000 claims description 27
- 230000035484 reaction time Effects 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 21
- 229910003460 diamond Inorganic materials 0.000 claims description 20
- 239000010432 diamond Substances 0.000 claims description 20
- 239000000243 solution Substances 0.000 claims description 19
- 238000005406 washing Methods 0.000 claims description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 14
- 239000011259 mixed solution Substances 0.000 claims description 14
- 239000003513 alkali Substances 0.000 claims description 12
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910021418 black silicon Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000003472 neutralizing effect Effects 0.000 claims description 6
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000003197 catalytic effect Effects 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 230000005622 photoelectricity Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 22
- 238000002310 reflectometry Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a reworking method of an acid texturing polycrystalline battery, and belongs to the technical field of photoelectricity. The method is used for producing the acid texturing polycrystalline reworked sheets, collects the bad sheets generated in the texturing, diffusion, acid etching and PECVD processes, carries out differential pretreatment on the reworked sheets generated in different processes, and then carries out texturing by a metal catalytic chemical etching Method (MCCE). The invention selects a difference pretreatment scheme aiming at the reworked sheets generated in different working procedures, reduces the difference of the surface states of the reworked sheets, and is beneficial to obtaining uniform suede after the reworked sheets are suede again. The cell is prepared by forming 200-doped 800-nanometer holes on the surface of the reworked sheet through the MCCE and further performing the subsequent processing procedures.
Description
Technical Field
The invention relates to a reworking method for an acid texturing polycrystalline battery, in particular to a reworking method for improving photoelectric conversion efficiency of a reworked sheet, and belongs to the technical field of photoelectricity.
Background
In the aspect of crystal silicon slicing technology, compared with the traditional mortar wire cutting technology, the diamond wire cutting technology has the advantages of high cutting speed, environment-friendly cutting liquid, low single-chip loss and the like. Therefore, the silicon cost of the silicon chip is greatly reduced, the market share is promoted year by year, and the silicon chip is gradually replaced by mortar wire cutting at present. In the aspect of polycrystalline cell technology, polycrystalline diamond wire-cut silicon wafers have the characteristics of shallow damage, high reflectivity, gully structure and the like. By in the presence of hydrogenAcid/nitric acid (HF/HNO)3) The auxiliary agent is added into the texturing liquid, so that the texture with the reflectivity equivalent to that of a mortar sheet can be realized, but the texture structure difference is obvious, and the texture structures of the polycrystalline diamond wire sheets are distributed along the gully structure.
At present, the process flow of the polycrystalline diamond wire battery piece is shown in fig. 1, and the texturing, the diffusion, the acid etching and the PECVD all generate poor pieces, and the poor pieces can be remade into the polycrystalline battery piece through the rework process flow. The traditional rework process flow is shown in fig. 2, wherein the main function of pre-cleaning is to remove SiNx, oxide layer, etc., and the main function of re-texturing is to remove PN junction and regenerate textured surface.
Due to HF/HNO3The texture surface making system is characterized in that: and taking the defect position of the silicon wafer as a raising point, and preferentially corroding the defect position. The surface damage layer of the polycrystalline diamond wire silicon wafer is removed after the first texturing, the surface defects of a reworked wafer are few after the reworked wafer is pre-cleaned and de-bonded, the reflectivity is high after the texturing is carried out again, the size of the textured surface is not uniform, and the problems of low photoelectric conversion efficiency, poor appearance and the like of a battery piece are caused.
Disclosure of Invention
The invention aims to overcome the defects and provide a reworking method of the acid texturing polycrystalline battery, which improves the photoelectric conversion efficiency of reworked sheets and solves the problems of color difference of appearance and the like.
In order to improve the photoelectric conversion efficiency of the reworked polycrystalline cell and solve the problems of color difference of appearance and the like, the invention develops the reworking method of the acid texturing polycrystalline cell, the reworking process is shown in figure 3, and the reworking method is suitable for producing the acid texturing polycrystalline reworked cell.
The invention relates to a reworking method of an acid texturing polycrystalline battery, which is used for producing acid texturing polycrystalline reworked sheets. The reworking method carries out differential pretreatment on reworked sheets generated by different processes.
Aiming at the reworked piece generated in the texturing process, the reworked piece is placed in a diffusion furnace for annealing treatment, the setting temperature is 450-;
removing phosphorosilicate glass on the surface of a rework sheet by using an HF solution aiming at the rework sheet generated in the diffusion process, performing MCCE (micro control element) texture making after pretreatment, wherein the volume concentration of the HF solution is 2-5%, and the reaction time is 100-150 s;
for a reworked wafer generated in the PECVD procedure, SiNx on the surface of the reworked wafer is removed through an HF/HCl mixed acid solution, MCCE texturing is carried out after pretreatment, the volume concentration of HF in the mixed solution is 2% -5%, the volume concentration of hydrochloric acid is 1% -3%, and the reaction time is 150-fold for 300 s.
The reworked piece produced in the acid etching process can be directly subjected to MCCE texturing without pretreatment.
The invention relates to a reworking method of an acid texturing polycrystalline battery, wherein reworked sheets subjected to differential pretreatment are textured again by MCCE; the MCCE texturing steps are as follows:
(1) and (3) mounting: inserting the preprocessed polycrystalline diamond wire reworking piece into a texturing bearing flower basket;
(2) pretreatment: polishing the surface of the reworked piece of the polycrystalline diamond wire by using a potassium hydroxide solution, and removing an acid texturing surface, wherein the mass concentration range of potassium hydroxide is 1.2-4%, the reaction temperature is 75-85 ℃, and the reaction time is 200-;
(3) acid washing: placing the polished silicon wafer into hydrofluoric acid solution with the volume concentration of 3% -5%, and neutralizing residual alkali liquor in the alkali polishing process;
(4) silver deposition: placing the silicon wafer after acid washing in a mixed solution containing silver nitrate and hydrofluoric acid, and depositing a layer of silver particles on the surface of the silicon wafer, wherein the volume concentration of the HF solution is 2-5%, the mass concentration of the silver nitrate is 0.001-0.005%, the reaction temperature is 25-35 ℃, and the reaction time is 60-300 s;
(5) digging a hole: placing the silicon wafer with the deposited silver in a mixed solution of hydrofluoric acid and hydrogen peroxide to form a nanoscale hole textured surface; the volume concentration of the HF solution is 2-5 percent, the volume concentration of the hydrogen peroxide is 0.5-2.5 percent, the reaction temperature is 25-35 ℃, and the reaction time is 100 seconds;
(6) desilverizing: immersing the black silicon wafer into a mixed solution of hydrogen peroxide and ammonia water to remove residual silver nanoparticles; the volume concentration of hydrogen peroxide in the mixed solution is 0.3-1.5%, the volume concentration of ammonia water is 0.4-1.2%, the reaction temperature is room temperature, and the reaction time is 120-;
(7) reaming: expanding the nano-scale holes formed by digging holes into submicron-scale holes, wherein the volume concentration of hydrofluoric acid in the hole expanding solution is 3-8%, the volume concentration of nitric acid is 20-30%, the reaction temperature is 6-15 ℃, and the reaction time is 60-180s, so that a black silicon structure with the hole diameter of 400-700nm is obtained;
(8) alkali washing: modifying the surface of the hole; the volume concentration of hydrogen peroxide is 0.3-1.5%, the volume concentration of ammonia water is 0.2-1.2%, the concentration of potassium hydroxide is 1.6-3.2%, the reaction temperature is room temperature, and the reaction time is 120-;
(9) acid washing: neutralizing residual alkali liquor, wherein the volume concentration of hydrofluoric acid is 5-10%, the volume concentration of hydrochloric acid is 1-3%, the reaction temperature is room temperature, and the reaction time is 120-;
(10) washing with water: removing residual acid liquor;
(11) drying: drying the silicon wafer after washing by using hot nitrogen; the drying temperature is 85 ℃ and the time is 480 and 720 seconds.
The invention has the beneficial effects that: the invention selects a difference pretreatment scheme aiming at the reworked sheets generated in different working procedures, reduces the difference of the surface states of the reworked sheets, and is beneficial to obtaining uniform suede after the reworked sheets are suede again. The invention forms 200-plus 800-nanometer-level holes on the surface of the reworked sheet by a metal catalytic chemical etching Method (MCCE), and further prepares the cell by the subsequent processing procedures.
Drawings
Fig. 1 is a schematic process flow diagram of a polycrystalline diamond wire cell.
Fig. 2 is a schematic diagram of a conventional rework process flow of a polycrystalline diamond wire cell.
Fig. 3 is a schematic diagram of an optimized rework process flow of the polycrystalline diamond wire cell.
Fig. 4 is a schematic view of a process texture.
a. Polycrystalline diamond wire suede; b. the traditional reworking process is suede; c. and optimizing the reworking process suede.
FIG. 5 shows textured reflectivity prepared using different process schemes.
Detailed Description
Example 1
And (3) putting a reworked sheet generated in the texturing process into a diffusion furnace for annealing treatment, setting the temperature at 450 ℃, the setting time at 20min and the large nitrogen flow at 1000mL/min, removing organic matters remained on the surface of the silicon wafer after the first texturing through the pretreatment, and further matching with the MCCE texturing process.
Example 2
For the reworked piece produced in the diffusion process, phosphorosilicate glass on the surface of the reworked piece can be removed through an HF solution, MCCE (micro-electro-ceramic) texturing is carried out after pretreatment, the volume concentration of HF is 5%, and the reaction time is 150 s.
Example 3
For a reworked wafer generated in the PECVD procedure, SiNx on the surface of the reworked wafer can be removed through an HF/HCl mixed acid solution, MCCE (micro electro mechanical polishing) texturing is carried out after pretreatment, the volume concentration of HF is 2%, the volume concentration of HCl is 3%, and the reaction time is 300 s.
Example 4
Collecting bad sheets generated in the processes of texturing, diffusion, acid etching and PECVD, and performing differential pretreatment on reworked sheets generated in different processes; and (3) directly carrying out MCCE (micro electro chemical etching) texturing on reworked sheets generated in the acid etching process without pretreatment. The specific steps are as shown in fig. 4, and are the appearance differences of the polycrystalline diamond wire reworked sheets after the sheets are subjected to the resheduling process through the traditional reworking process and the optimized reworking process.
The method comprises the following specific steps:
(1) and (3) mounting: inserting the preprocessed polycrystalline diamond wire reworking piece into a texturing bearing flower basket;
(2) pretreatment: polishing the surface of the reworked piece of the polycrystalline diamond wire by using a potassium hydroxide solution, removing an acid texturing surface, wherein the concentration of potassium hydroxide is 1.2%, the reaction temperature is 85 ℃, and the reaction time is 480 s;
(3) acid washing: placing the polished silicon wafer into a hydrofluoric acid solution with the concentration of 5%, and neutralizing residual alkali liquor in the alkali polishing process;
(4) silver deposition: placing the silicon wafer after acid washing in a mixed solution containing silver nitrate and hydrofluoric acid, and depositing a layer of silver particles on the surface of the silicon wafer, wherein the concentration of the hydrofluoric acid is 2%, the mass concentration of the silver nitrate is 0.001%, the reaction temperature is 25 ℃, and the reaction time is 300 s;
(5) digging a hole: and placing the silicon wafer with the deposited silver in a mixed solution of hydrofluoric acid and hydrogen peroxide to form a nano-scale hole textured surface. The concentration of hydrofluoric acid is 5 percent, the concentration of hydrogen peroxide is 0.5 percent, the reaction temperature is 35 ℃, and the reaction time is 300 s;
(6) desilverizing: and (3) immersing the black silicon wafer into a mixed solution of hydrogen peroxide and ammonia water to remove residual silver nanoparticles. The concentration of hydrogen peroxide in the mixed solution is 1 percent, the concentration of ammonia water is 1.2 percent, the reaction temperature is room temperature, and the reaction time is 120 s;
(7) reaming: expanding the nano-scale holes formed by digging holes into sub-micron-scale holes, wherein the concentration of hydrofluoric acid in the hole-expanding solution is 3 percent, the concentration of nitric acid in the hole-expanding solution is 30 percent, the reaction temperature is 15 ℃, and the reaction time is 60s, so that a black silicon structure with the hole diameter of 700nm is obtained;
(8) alkali washing: and (5) modifying the surface of the hole. The concentration of hydrogen peroxide is 1 percent, the concentration of ammonia water is 1.2 percent, the concentration of potassium hydroxide is 1.6 percent, the reaction temperature is room temperature, and the reaction time is 360 seconds;
(9) acid washing: neutralizing residual alkali liquor, wherein the concentration of hydrofluoric acid is 10%, the concentration of hydrochloric acid is 2%, the reaction temperature is room temperature, and the reaction time is 360 seconds;
(10) washing with water: removing residual acid liquor;
(11) drying: drying the silicon wafer after washing by using hot nitrogen; the drying temperature is 85 ℃ and the drying time is 480 s.
The reflectivity of the polycrystalline diamond wire reworked sheet after the traditional reworking process is adopted and the velvet manufactured by the traditional reworking process is 25% -29%, and the reflectivity of the polycrystalline diamond wire reworked sheet after the process manufactured by the embodiment 4 is 18% -21%.
Specific parameters are shown in table 1.
TABLE 1
| Process scheme | Uoc(V) | Isc(A) | Rs | Rsh | FF | NCell |
| Conventional polycrystalline diamond wire | 0.6441 | 9.0032 | 0.00134 | 126.04 | 80.78 | 19.08％ |
| Traditional rework process | 0.6409 | 8.8462 | 0.00134 | 123.43 | 80.91 | 18.67％ |
| Optimized rework process | 0.6430 | 9.1676 | 0.00133 | 87.48 | 80.70 | 19.36％ |
In the above table, Uoc is open-circuit voltage, Isc is short-circuit current, Rs is series resistance, Rsh is parallel resistance, FF is fill factor, and Ncell is photoelectric conversion efficiency.
As can be seen from table 1, the photoelectric conversion efficiency of the polycrystalline diamond wire cells prepared by the two rework schemes of the conventional and examples 1 to 4 differed by 0.5% to 1%.
Claims (1)
1. A reworking method of an acid texturing polycrystalline battery is characterized by comprising the following steps: the method is used for producing acid texturing polycrystalline reworked sheets, poor sheets generated in texturing, diffusion, acid etching and PECVD processes are collected, differential pretreatment is carried out on reworked sheets generated in different processes, and then MCCE texturing is carried out;
aiming at the reworked piece generated in the texturing process, the reworked piece is placed in a diffusion furnace for annealing treatment, the setting temperature is 450-;
removing phosphorosilicate glass on the surface of a rework sheet generated in the diffusion process through an HF solution, performing MCCE (micro control element) texture making after pretreatment, wherein the volume concentration of the HF solution is 2-5%, and the reaction time is 100-150 s;
for a reworked wafer generated in the PECVD procedure, SiNx on the surface of the reworked wafer is removed through an HF/HCl mixed acid solution, MCCE texturing is carried out after pretreatment, the volume concentration of HF in the mixed solution is 2% -5%, the volume concentration of hydrochloric acid is 1% -3%, and the reaction time is 150-sec;
directly carrying out MCCE (micro electro chemical etching) texturing on reworked sheets generated in the acid etching process without pretreatment;
the reworked sheets subjected to the differential pretreatment are subjected to the wool making again through the MCCE;
the MCCE texturing steps are as follows:
(1) and (3) mounting: inserting the preprocessed polycrystalline diamond wire reworking piece into a texturing bearing flower basket;
(2) pretreatment: polishing the surface of the reworked piece of the polycrystalline diamond wire by using a potassium hydroxide solution, and removing an acid texturing surface, wherein the mass concentration range of potassium hydroxide is 1.2-4%, the reaction temperature is 75-85 ℃, and the reaction time is 200-;
(3) acid washing: placing the polished silicon wafer into hydrofluoric acid solution with the volume concentration of 3% -5%, and neutralizing residual alkali liquor in the alkali polishing process;
(4) silver deposition: placing the silicon wafer after acid washing in a mixed solution containing silver nitrate and hydrofluoric acid, and depositing a layer of silver particles on the surface of the silicon wafer, wherein the volume concentration of the HF solution is 2-5%, the mass concentration of the silver nitrate is 0.001-0.005%, the reaction temperature is 25-35 ℃, and the reaction time is 60-300 s;
(5) digging a hole: placing the silicon wafer with the deposited silver in a mixed solution of hydrofluoric acid and hydrogen peroxide to form a nanoscale hole textured surface; the volume concentration of the HF solution is 2-5 percent, the volume concentration of the hydrogen peroxide is 0.5-2.5 percent, the reaction temperature is 25-35 ℃, and the reaction time is 100 seconds;
(6) desilverizing: immersing the black silicon wafer into a mixed solution of hydrogen peroxide and ammonia water to remove residual silver nanoparticles; the volume concentration of hydrogen peroxide in the mixed solution is 0.3-1.5%, the volume concentration of ammonia water is 0.4-1.2%, the reaction temperature is room temperature, and the reaction time is 120-;
(7) reaming: expanding the nano-scale holes formed by digging holes into submicron-scale holes, wherein the volume concentration of hydrofluoric acid in the hole expanding solution is 3-8%, the volume concentration of nitric acid is 20-30%, the reaction temperature is 6-15 ℃, and the reaction time is 60-180s, so that a black silicon structure with the hole diameter of 400-700nm is obtained;
(8) alkali washing: modifying the surface of the hole; the volume concentration of hydrogen peroxide is 0.3-1.5%, the volume concentration of ammonia water is 0.2-1.2%, the concentration of potassium hydroxide is 1.6-3.2%, the reaction temperature is room temperature, and the reaction time is 120-;
(9) acid washing: neutralizing residual alkali liquor, wherein the volume concentration of hydrofluoric acid is 5-10%, the volume concentration of hydrochloric acid is 1-3%, the reaction temperature is room temperature, and the reaction time is 120-;
(10) washing with water: removing residual acid liquor;
(11) drying: drying the silicon wafer after washing by using hot nitrogen; the drying temperature is 85 ℃ and the time is 480 and 720 seconds.
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