CN101872806A - Method for texture etching of solar cell silicon wafer and method for manufacturing solar cell - Google Patents
Method for texture etching of solar cell silicon wafer and method for manufacturing solar cell Download PDFInfo
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- CN101872806A CN101872806A CN201010183525A CN201010183525A CN101872806A CN 101872806 A CN101872806 A CN 101872806A CN 201010183525 A CN201010183525 A CN 201010183525A CN 201010183525 A CN201010183525 A CN 201010183525A CN 101872806 A CN101872806 A CN 101872806A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for texture etching of a solar cell silicon wafer and a method for manufacturing a solar cell. The method for the texture etching of the solar cell silicon wafer comprises steps of back polishing, texture etching and cleaning. On the premise that the texture etching structure of the front side of the silicon wafer is not destroyed, the method can produce a cell back in flattened surface state, and reduce recombination between metal electrodes and silicon so as to improve the cell efficiency.
Description
Technical field
The present invention relates to the photovoltaic technology field, be specifically related to a kind of manufacture method of etching method and solar cell of solar cell silicon wafer.
Background technology
In the production technology of traditional silicon substrate solar cell, generally all need silicon chip is carried out surface wool manufacturing, form rugged suede structure on the surface of silicon chip to increase the absorption of silicon face to sunlight, improve the conversion efficiency of battery.Chinese patent mandate publication number is that the patent of invention of 100344001C discloses a kind of method for preparing polycrystalline silicon suede.This method when polysilicon shows the affected layer of generation in removing the cutting processing process, forms required matte at polysilicon surface by substituting traditional NaOH and KOH corrosive liquid with acid etching solution.
The Chinese patent Granted publication discloses a kind of acid etching solution and using method thereof for preparing polycrystalline silicon suede number for the patent of invention of 100467670C is further improved above-mentioned patent application.Carry out the preparation of polycrystalline silicon suede according to the acid etching solution of this patent application, can effectively handle the spent acid that is produced, and eliminated heavy metal in the discharging waste liquid the harm of environment.
Though according to above-mentioned patent application, can prepare polycrystalline silicon suede effectively, have following problem in the present process for etching: in the manufacture process of crystal-silicon solar cell, the positive and back side all is coated with one deck suede structure.The suede structure at the back side can cause aluminium back of the body field not good with combining of silicon, make that the compound area in the back side is bigger, influenced the open circuit voltage of battery, simultaneously light incides be reflected and utilize behind the back side less, has brought certain negative effect therefore for passivating back effect and electric current collection.
Summary of the invention
At the problem that prior art exists, one of purpose of the present invention is to provide the etching method of solar cell silicon wafer, by this method, can obtain the very smooth cell backside of surface state under the prerequisite of the suede structure that does not destroy the silicon chip front.
Another purpose of the present invention is to provide a kind of method of making solar cell, and the silicon chip front of the solar cell of producing by this manufacture method has suede structure and the back side has smooth surface.
The invention provides a kind of etching method of solar cell silicon wafer, comprise silicon chip is carried out following steps: making herbs into wool, polished backside and cleaning.
In said method of the present invention, the making herbs into wool step comprises: silicon chip is immersed in the mixed solution of oxidant and hydrofluoric acid, the concentration range of this oxidant is 0.01 to 0.5 mol, the concentration range of hydrofluoric acid is 1 to 15 mol, temperature range is 5 ℃ to 50 ℃, the acid corrosion time is 5 minutes to 60 minutes, and wherein oxidant is CrO
3, K
2Cr
2O
7Or its mixture.
In said method of the present invention, the making herbs into wool step comprises: silicon chip is immersed in oxidant and the hydrofluoric acid mixed solution, and oxidant is nitrate or nitrite, and its concentration range is 0.1 to 10 mol, and the concentration range of hydrofluoric acid is 10 to 25 mol.Wherein nitrate is preferably sodium nitrate or potassium nitrate or ammonium nitrate, and nitrite is preferably nitrite natrium or potassium nitrite or ammonium nilrite.Preferably, the acid corrosion time is 30 seconds to 20 minutes, and the temperature range of mixed solution is-10 ℃ to 25 ℃.
In said method of the present invention, polished backside is to be undertaken by mechanical polishing or chemical polishing or chemical mechanical polishing technology.
The etching method of solar cell silicon wafer comprises silicon chip is carried out following steps: polished backside, making herbs into wool and cleaning.
In said method of the present invention, the making herbs into wool step comprises: silicon chip is immersed in oxidant and the hydrofluoric acid mixed solution, the concentration range of this oxidant is 0.01 to 0.5 mol, the concentration range of hydrofluoric acid is 1 to 15 mol, temperature range is 5 ℃ to 50 ℃, the acid corrosion time is 5 minutes to 60 minutes, and wherein oxidant is CrO
3, K
2Cr
2O
7Or its mixture.
In said method of the present invention, the making herbs into wool step comprises: silicon chip is immersed in oxidant and the hydrofluoric acid mixed solution, and oxidant is nitrate or nitrite, and its concentration range is 0.1 to 10 mol, and the concentration range of hydrofluoric acid is 10 to 25 mol.Wherein nitrate is preferably sodium nitrate or potassium nitrate or ammonium nitrate, and nitrite is preferably nitrite natrium or potassium nitrite or ammonium nilrite.Preferably, the acid corrosion time is 30 seconds to 20 minutes, and the temperature range of mixed solution is-10 ℃ to 25 ℃.
In said method of the present invention, polished backside is to be undertaken by mechanical polishing or chemical polishing or chemical mechanical polishing technology.
The present invention provides a kind of method of making solar cell in addition, to carrying out diffusion, etching, plated film and metallization process according to the resulting silicon chip of said method.
The present invention proposes a kind of solar module that adopts the solar cell of said method manufacturing and comprise described a plurality of solar cells in addition.
Technique effect of the present invention is that this method can obtain the very smooth back side, makes aluminium back of the body field better with combining of silicon chip, and has reduced compound area greatly, has improved passivation effect, promotes open circuit voltage; Simultaneously, adopt the solar cell of polished backside, improved the reflectivity at the back side, can make the light that incide cell backside are reflexed to the front PN junction more, thereby produce more photogenerated current, improved the electric current collection of battery, the lifting that has brought battery efficiency after these effects are comprehensive.
Description of drawings
Fig. 1 is the flow chart according to the etching method of solar cell silicon wafer of the present invention;
Fig. 2 is the flow chart according to the etching method of another solar cell silicon wafer of the present invention;
Fig. 3 is the flow chart according to the method for manufacturing solar cell of the present invention;
Fig. 4 is the flow chart according to the method for another manufacturing solar cell of the present invention.
Embodiment
Be the detailed description of the preferred embodiments of the present invention below, with reference to the drawings, identical in the accompanying drawings reference number is represented identical step.
The general silicon chip that uses is to adopt the method cutting silicon ingot of line cutting to form, and employed silicon chip includes but not limited to polysilicon, monocrystalline silicon.In the process of cutting silicon ingot, silicon chip surface and silicon-carbide particles and steel wire acutely rub, and have generated one deck affected layer in uneven thickness on the surface of silicon chip.
Fig. 1 is the flow chart according to the etching method of solar cell silicon wafer of the present invention.At first, at step S1, silicon chip is carried out polished backside technology, directly the silicon chip that the line cutting without special cleaning is made carries out polished backside, thereby for example can use mechanical polishing technology to come the polished silicon slice back side to form the silicon chip back side with smooth surface; Perhaps adopt chemical polishing to come silicon chip back is polished, wherein this chemical polishing includes but not limited to acid solution polishing or aqueous slkali polishing; Perhaps the chemical mechanical polishing method in conjunction with two kinds of finishing methods polishes silicon chip back.At step S2, carry out process for etching, the silicon chip that the back side is formed smooth surface is immersed in the acid etching solution.After polished backside technology and corrosion treatment, the silicon chip front has coarse suede structure, and the silicon chip back side has smooth surface.At step S3, carry out cleaning.
The process conditions of the acid corrosion among the step S2 can list of references Chinese patent mandate publication number be the patent of invention of 100344001C:
1, the composition of acid etching solution
Oxidant: 0.01 to 0.5 mol, oxidant can be CrO
3, K
2Cr
2O
7Or its mixture
Hydrofluoric acid: 1 to 15 mol
2, technological temperature: 5 ℃ to 50 ℃, be preferably 20 ℃ to 30 ℃
3, etching time: 5 to 60 minutes
The process conditions of the acid corrosion among the step S2 can number be the patent of invention of 100467670C with reference to the Chinese patent Granted publication also:
1, the composition of acid etching solution
Oxidant: 0.1 to 10 mol, be preferably 0.3 to 5 mol, oxidant can be nitrate or nitrite, and wherein this nitrate is preferably sodium nitrate or potassium nitrate or ammonium nitrate, and this nitrite is preferably nitrite natrium or potassium nitrite or ammonium nilrite
Hydrofluoric acid: 10 to 25 mol are preferably 15 to 22 mol
2, technological temperature :-10 ℃ to 25 ℃, be preferably 0 ℃ to 15 ℃
3, etching time: 30 seconds to 20 minutes, be preferably 1 minute to 10 minutes
In step S2, come the controlled oxidation reaction rate by controlled oxidation agent concentration and/or technological temperature, make the speed of corrosion damage layer substantially exceed the speed of corrosion of silicon, therefore the uneven characteristic of damage layer thickness can be retained down after the corrosion fully at affected layer, all forms suede structure at the front and back of silicon chip.Then silicon chip back is polished and form the smooth back side.
Fig. 2 is the flow chart according to the etching method of another solar cell silicon wafer of the present invention.Compare with method shown in Figure 1, difference is, carries out polished backside technology behind the execution process for etching earlier.Since silicon chip back is carried out glossing, suede structure formed in the front of silicon chip, and the back side has smooth surface.
Fig. 3 is the flow chart according to the method for manufacturing solar cell of the present invention.At step S11, carry out polished backside technology; At step S12, carry out process for etching; At step S3, carry out cleaning; At step S4, carry out diffusion technology; At step S5, carry out etching technics; At step S6, carry out coating process; At step S7, carry out metallization process.
Fig. 4 is the flow chart according to the method for another manufacturing solar cell of the present invention, compares with method shown in Figure 3, and its difference is, carries out polished backside technology behind the execution process for etching earlier.
The invention is not restricted to detailed description herein.It is to be appreciated that those skilled in the art that the present invention can implement with other form.Therefore, whole technical schemes of the present invention and cited execution mode only are used for example the present invention rather than restriction the present invention, and the present invention is not limited to details described herein.The scope of protection of present invention is defined by appending claims.
Claims (15)
1. the etching method of a solar cell silicon wafer is characterized in that, comprises silicon chip is carried out following steps: making herbs into wool, polished backside and cleaning.
2. etching method as claimed in claim 1, it is characterized in that, described making herbs into wool step comprises: silicon chip is immersed in oxidant and the hydrofluoric acid mixed solution, the concentration range of this oxidant is 0.01 to 0.5 mol, the concentration range of hydrofluoric acid is 1 to 15 mol, temperature range is 5 ℃ to 50 ℃, and the acid corrosion time is 5 minutes to 60 minutes, and wherein said oxidant is CrO
3, K
2Cr
2O
7Or its mixture.
3. etching method as claimed in claim 1, it is characterized in that, described making herbs into wool step comprises: silicon chip is immersed in oxidant and the hydrofluoric acid mixed solution, described oxidant is nitrate or nitrite, its concentration range is 0.1 to 10 mol, and the concentration range of described hydrofluoric acid is 10 to 25 mol.
4. etching method as claimed in claim 3 is characterized in that, described nitrate is sodium nitrate or potassium nitrate or ammonium nitrate, and described nitrite is nitrite natrium or potassium nitrite or ammonium nilrite.
5. as claim 3 or 4 described etching methods, it is characterized in that the acid corrosion time is 30 seconds to 20 minutes, the temperature range of mixed solution is-10 ℃ to 25 ℃.
6. etching method as claimed in claim 1 is characterized in that, described polished backside is to be undertaken by mechanical polishing or chemical polishing or chemical mechanical polishing technology.
7. the etching method of a solar cell silicon wafer is characterized in that, comprises silicon chip is carried out following steps: polished backside, making herbs into wool and cleaning.
8. etching method as claimed in claim 7, it is characterized in that, described making herbs into wool step comprises: silicon chip is immersed in oxidant and the hydrofluoric acid mixed solution, the concentration range of this oxidant is 0.01 to 0.5 mol, the concentration range of hydrofluoric acid is 1 to 15 mol, temperature range is 5 ℃ to 50 ℃, and the acid corrosion time is 5 minutes to 60 minutes, and wherein said oxidant is CrO
3, K
2Cr
2O
7Or its mixture.
9. etching method as claimed in claim 7, it is characterized in that, described making herbs into wool step comprises: silicon chip is immersed in oxidant and the hydrofluoric acid mixed solution, described oxidant is nitrate or nitrite, its concentration range is 0.1 to 10 mol, and the concentration range of described hydrofluoric acid is 10 to 25 mol.
10. etching method as claimed in claim 9 is characterized in that, described nitrate is sodium nitrate or potassium nitrate or ammonium nitrate, and described nitrite is nitrite natrium or potassium nitrite or ammonium nilrite.
11., it is characterized in that the acid corrosion time is 30 seconds to 20 minutes as claim 9 or 10 described etching methods, the temperature range of mixed solution is-10 ℃ to 25 ℃.
12. etching method as claimed in claim 7 is characterized in that, described polished backside is to be undertaken by mechanical polishing or chemical polishing or chemical mechanical polishing technology.
13. a method of making solar cell is characterized in that, to carrying out diffusion, etching, plated film and metallization process according to the resulting silicon chip of each method among the claim 1-12.
14. solar cell of making by method as claimed in claim 13.
15. a solar module is characterized in that, comprises the solar cell that a plurality of methods according to claim 13 are made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010183525A CN101872806A (en) | 2010-05-14 | 2010-05-14 | Method for texture etching of solar cell silicon wafer and method for manufacturing solar cell |
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|---|---|---|---|
| CN201010183525A CN101872806A (en) | 2010-05-14 | 2010-05-14 | Method for texture etching of solar cell silicon wafer and method for manufacturing solar cell |
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| CN101872806A true CN101872806A (en) | 2010-10-27 |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185011A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Texturing method for solar cell |
| CN102634799A (en) * | 2011-02-15 | 2012-08-15 | 中山大学 | Solar cell emitting electrode corroding method |
| CN102969391A (en) * | 2012-08-27 | 2013-03-13 | 横店集团东磁股份有限公司 | Method for preparing back-side polishing monocrystalline silicon battery by mask method |
| CN103258918A (en) * | 2013-05-31 | 2013-08-21 | 英利集团有限公司 | Silicon wafer texturing method, solar battery piece and manufacturing method of solar battery piece |
| CN103367467A (en) * | 2013-08-02 | 2013-10-23 | 浙江正泰太阳能科技有限公司 | Solar cell |
| CN103806105A (en) * | 2012-11-02 | 2014-05-21 | 无锡尚德太阳能电力有限公司 | Coating source diffusion method capable of improving diffusion property |
| CN104032376A (en) * | 2014-06-04 | 2014-09-10 | 浙江尖山光电股份有限公司 | Texturing method of solar cell silicon chip, solar cell and battery pack |
| CN104051578A (en) * | 2014-07-02 | 2014-09-17 | 周浪 | Gas phase etching texturing method for polycrystalline silicon chip for solar battery |
| CN104051563A (en) * | 2013-03-14 | 2014-09-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Preparation method of solar cell |
| CN105529380A (en) * | 2014-12-09 | 2016-04-27 | 杭州大和热磁电子有限公司 | Preparation method for single crystalline silicon solar cell piece with polished back surface |
| CN106229375A (en) * | 2016-08-05 | 2016-12-14 | 晋能清洁能源科技有限公司 | A kind of silicon chip back side finishing method |
| CN106653948A (en) * | 2016-12-28 | 2017-05-10 | 江西瑞晶太阳能科技有限公司 | Solar cell and cell back polishing process thereof |
| CN111303883A (en) * | 2019-10-28 | 2020-06-19 | 芯思杰技术(深圳)股份有限公司 | Corrosive liquid and preparation method of chip table board |
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| CN1614789A (en) * | 2004-09-30 | 2005-05-11 | 无锡尚德太阳能电力有限公司 | Method for preparing polycrystalline silicon suede |
| CN101523615A (en) * | 2006-08-22 | 2009-09-02 | Bp太阳能旗舰股份有限公司 | Photovoltaic cell and production thereof |
| CN101179100A (en) * | 2007-01-17 | 2008-05-14 | 江苏林洋新能源有限公司 | Manufacturing method of large area low bending flexure ultra-thin type double face lighting solar cell |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185011A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Texturing method for solar cell |
| CN102634799A (en) * | 2011-02-15 | 2012-08-15 | 中山大学 | Solar cell emitting electrode corroding method |
| CN102969391A (en) * | 2012-08-27 | 2013-03-13 | 横店集团东磁股份有限公司 | Method for preparing back-side polishing monocrystalline silicon battery by mask method |
| CN102969391B (en) * | 2012-08-27 | 2015-04-08 | 横店集团东磁股份有限公司 | Method for preparing back-side polishing monocrystalline silicon battery by mask method |
| CN103806105A (en) * | 2012-11-02 | 2014-05-21 | 无锡尚德太阳能电力有限公司 | Coating source diffusion method capable of improving diffusion property |
| CN104051563A (en) * | 2013-03-14 | 2014-09-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Preparation method of solar cell |
| CN104051563B (en) * | 2013-03-14 | 2017-03-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | The preparation method of solar cell |
| CN103258918A (en) * | 2013-05-31 | 2013-08-21 | 英利集团有限公司 | Silicon wafer texturing method, solar battery piece and manufacturing method of solar battery piece |
| CN103367467A (en) * | 2013-08-02 | 2013-10-23 | 浙江正泰太阳能科技有限公司 | Solar cell |
| CN104032376A (en) * | 2014-06-04 | 2014-09-10 | 浙江尖山光电股份有限公司 | Texturing method of solar cell silicon chip, solar cell and battery pack |
| CN104051578A (en) * | 2014-07-02 | 2014-09-17 | 周浪 | Gas phase etching texturing method for polycrystalline silicon chip for solar battery |
| CN104051578B (en) * | 2014-07-02 | 2016-08-24 | 周浪 | A kind of gas phase etching etching method of solar cell polysilicon chip |
| CN105529380A (en) * | 2014-12-09 | 2016-04-27 | 杭州大和热磁电子有限公司 | Preparation method for single crystalline silicon solar cell piece with polished back surface |
| CN106229375A (en) * | 2016-08-05 | 2016-12-14 | 晋能清洁能源科技有限公司 | A kind of silicon chip back side finishing method |
| CN106653948A (en) * | 2016-12-28 | 2017-05-10 | 江西瑞晶太阳能科技有限公司 | Solar cell and cell back polishing process thereof |
| CN111303883A (en) * | 2019-10-28 | 2020-06-19 | 芯思杰技术(深圳)股份有限公司 | Corrosive liquid and preparation method of chip table board |
| CN111303883B (en) * | 2019-10-28 | 2021-12-14 | 芯思杰技术(深圳)股份有限公司 | Corrosive liquid and preparation method of chip table board |
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Application publication date: 20101027 |