CN104032376A - Texturing method of solar cell silicon chip, solar cell and battery pack - Google Patents
Texturing method of solar cell silicon chip, solar cell and battery pack Download PDFInfo
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- CN104032376A CN104032376A CN201410245838.7A CN201410245838A CN104032376A CN 104032376 A CN104032376 A CN 104032376A CN 201410245838 A CN201410245838 A CN 201410245838A CN 104032376 A CN104032376 A CN 104032376A
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- solar cell
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a texturing method of solar cell silicon chip as well as a solar cell and a battery pack prepared by adopting the method. The method is characterized by comprising the following steps of texturing, back polishing and cleaning the silicon chip, wherein the sequence of the steps of texturing and back polishing can be replaced; the texturing step refers to immersing the silicon chip in a mixed solution of an oxidizing agent and hydrofluoric acid. A flat back surface can be obtained, so that an aluminum back field is well combined with the silicon chip, the composite area is greatly reduced, the passivation effect is improved, and open-circuit voltage is improved. Meanwhile, by adoption of a back polished solar cell, the reflectivity of the back surface is improved, so that more light rays coming into the back surface of the cell can be reflected to the front PN junction, more photo-generated current can be generated, the current collection rate of the cell is improved, and the efficiency of the cell is improved due to the comprehensive effects.
Description
Technical field
The present invention relates to photovoltaic technology field, be specifically related to a kind of etching method of solar cell silicon wafer and solar cell and the battery component that adopts the method to make.
Background technology
In the production technique of traditional silicon substrate solar cell, generally all need silicon chip to carry out surface wool manufacturing, form rugged suede structure on the surface of silicon chip to increase the absorption of silicon face to sunlight, improve the efficiency of conversion of battery.The patent of invention that Chinese patent mandate publication number is 100344001C discloses a kind of method of preparing polycrystalline silicon suede.The method, by substituting traditional NaOH and KOH corrosive fluid with acid etching solution, in removing the affected layer that in cutting processing process, polysilicon shows to produce, forms required matte at polysilicon surface.
Chinese patent Granted publication number is that the patent of invention of 100467670C is further improved above-mentioned patent application, discloses a kind of acid etching solution and using method thereof of preparing polycrystalline silicon suede.Carry out the preparation of polycrystalline silicon suede according to the acid etching solution of this patent application, can effectively process produced spent acid, and eliminated the harm of the heavy metal discharging in waste liquid to environment.
Although according to above-mentioned patent application, can effectively prepare polycrystalline silicon suede, have following problem in current leather producing process: in the manufacturing processed of crystal-silicon solar cell, the positive and back side is all coated with one deck suede structure.The suede structure at the back side can cause the combination of aluminium back surface field and silicon not good, make the compound area in the back side larger, affect the open circuit voltage of battery, after light incides the back side, be reflected the less of recycling simultaneously, brought certain negative impact therefore to passivating back effect and electric current collection.
Summary of the invention
The problem existing for prior art, one of object of the present invention is to provide the etching method of solar cell silicon wafer, by the method, can, under the prerequisite of suede structure of not destroying front side of silicon wafer, obtain the very smooth cell backside of condition of surface.
Another object of the present invention is to provide a kind of method of manufacturing solar cell, and the front side of silicon wafer of the solar cell of producing by this manufacture method has suede structure and the back side has smooth surface.
For this reason, the present invention takes following technical scheme: a kind of etching method of solar cell silicon wafer, it is characterized in that, comprise silicon chip is carried out to following steps: making herbs into wool, polished backside and cleaning, the sequencing interchangeable of described making herbs into wool and polished backside, described making herbs into wool step is that silicon chip is immersed in oxygenant and hydrofluoric acid mixing solutions.
Described oxygenant is CrO
3, K
2cr
2o
7or its mixture, the concentration range of this oxygenant is 0.01 to 0.5 mol/L, and the concentration range of hydrofluoric acid is 1 to 15 mol/L, and temperature range is 5 DEG C to 50 DEG C, and the acid corrosion time is 5 minutes to 60 minutes.
Described oxygenant is nitrate or nitrite, and its concentration range is 0.1 to 10 mol/L, and the concentration range of described hydrofluoric acid is 10 to 25 mol/L.
Described nitrate is SODIUMNITRATE or saltpetre or ammonium nitrate, and described nitrite is nitrite natrium or potassium nitrite or ammonium nitrite.
The described acid corrosion time is 30 seconds to 20 minutes, and the temperature range of mixing solutions is-10 DEG C to 25 DEG C.
Described polished backside is to be undertaken by mechanical polishing or chemical rightenning or chemical mechanical polishing technique.
The silicon chip again aforesaid method being obtained is carried out diffusion, etching, plated film and metallization process, makes solar cell, utilizes above-mentioned solar cell to make solar module.
Technique effect of the present invention is, present method can obtain the very smooth back side, makes the combination of aluminium back surface field and silicon chip better, and has greatly reduced compound area, has improved passivation effect, promotes open circuit voltage; Meanwhile, adopt the solar cell of polished backside, improved the reflectivity at the back side, can make the light reflections that incide cell backside to front PN junction more, thereby produce more photogenerated current, improved the electric current collection of battery, the lifting that has brought battery efficiency after these effects are comprehensive.
Brief description of the drawings
Fig. 1 is the schema of the etching method of solar cell silicon wafer of the present invention;
Fig. 2 is the schema of the etching method of another solar cell silicon wafer of the present invention;
Fig. 3 is the schema of the method for manufacture solar cell of the present invention;
Fig. 4 is the schema of the method for another manufacture solar cell of the present invention.
Embodiment
Be the detailed description of the preferred embodiments of the present invention below, with reference to the drawings, identical reference number represents identical step in the accompanying drawings.
The general silicon chip using is to adopt the method cutting silicon ingot of line cutting to form, and the silicon chip using includes but not limited to polysilicon, silicon single crystal.In the process of cutting silicon ingot, silicon chip surface and silicon-carbide particles and steel wire acutely rub, at the Surface Creation of silicon chip the inhomogeneous affected layer of a layer thickness.
As shown in Figure 1, first step S1, silicon chip is carried out to polished backside technique, and the silicon chip directly line without special cleaning cutting being made carries out polished backside, forms the silicon chip back side with smooth surface thereby for example can come the polished silicon slice back side with mechanical polishing technology; Or adopt chemical rightenning to carry out polishing to the back side of silicon chip, wherein this chemical rightenning includes but not limited to acid solution polishing or alkaline solution polishing; Or the chemical mechanical polishing method in conjunction with two kinds of finishing methods carries out polishing to the back side of silicon chip.
Step 2, carries out leather producing process, and the silicon chip that the back side is formed to smooth surface is immersed in acid etching solution.After polished backside technique and corrosion treatment, front side of silicon wafer has coarse suede structure, and silicon chip back side has smooth surface.
Step 3, carry out cleaning, the composition of acid etching solution:
1. oxygenant: 0.01 to 0.5 mol/L, oxygenant can be CrO
3, K
2cr
2o
7or its mixture hydrofluoric acid: 1 to 15 mol/L
2, technological temperature: 5 DEG C to 50 DEG C, be preferably 20 DEG C to 30 DEG C
3, etching time: 5 to 60 minutes
Acid etching solution also can do following selection:
1. oxygenant: 0.1 to 10 mol/L, be preferably 0.3 to 5 mol/L, oxygenant can be nitrate or nitrite, wherein this nitrate is preferably SODIUMNITRATE or saltpetre or ammonium nitrate, this nitrite is preferably nitrite natrium or potassium nitrite or ammonium nitrite, hydrofluoric acid: 10 to 25 mol/L, are preferably 15 to 22 mol/L
2, technological temperature :-10 DEG C to 25 DEG C, be preferably 0 DEG C to 15 DEG C
3, etching time: 30 seconds to 20 minutes, be preferably 1 minute by 10 minutes in step S2, control oxidizing reaction rate by controlling oxidant concentration and/or technological temperature, make the speed of corrosion damage layer substantially exceed the speed of corrosion of silicon, therefore, under the inhomogeneous characteristic of damage layer thickness can be retained after affected layer is corroded completely, all form suede structure at the front and back of silicon chip.Then polishing is carried out in the back side of silicon chip and form the smooth back side.
Fig. 2 is according to the schema of the etching method of another solar cell silicon wafer of the present invention.Compared with the method shown in Fig. 1, difference is, carries out polished backside technique after first carrying out leather producing process.Because glossing is carried out at the back side to silicon chip, thus suede structure formed in the front of silicon chip, and the back side has smooth surface.
Fig. 3 is according to the schema of the method for manufacture solar cell of the present invention.At step S1, carry out polished backside technique; At step S2, carry out leather producing process; At step S3, carry out cleaning; At step S4, carry out diffusion technique; At step S5, carry out etching technics; At step S6, carry out coating process; At step S7, carry out metallization process.
Fig. 4 is according to the schema of the method for another manufacture solar cell of the present invention, and compared with the method shown in Fig. 3, its difference is, carries out polished backside technique after first carrying out leather producing process.
The invention is not restricted to detailed description herein.It is to be appreciated that those skilled in the art that the present invention can implement with other form.Therefore, whole technical schemes of the present invention and cited embodiment are only for example the present invention instead of restriction the present invention, and the present invention is not limited to details described herein.The scope of protection of present invention is defined by appending claims.
Claims (9)
1. the etching method of a solar cell silicon wafer, it is characterized in that, comprise silicon chip is carried out to following steps: making herbs into wool, polished backside and cleaning, the sequencing interchangeable of described making herbs into wool and polished backside, described making herbs into wool step is that silicon chip is immersed in oxygenant and hydrofluoric acid mixing solutions.
2. etching method as claimed in claim 1, is characterized in that described oxygenant is CrO
3, K
2cr
2o
7or its mixture, the concentration range of this oxygenant is 0.01 to 0.5 mol/L, and the concentration range of hydrofluoric acid is 1 to 15 mol/L, and temperature range is 5 DEG C to 50 DEG C, and the acid corrosion time is 5 minutes to 60 minutes.
3. etching method as claimed in claim 1, is characterized in that described oxygenant is nitrate or nitrite, and its concentration range is 0.1 to 10 mol/L, and the concentration range of described hydrofluoric acid is 10 to 25 mol/L.
4. etching method as claimed in claim 3, is characterized in that described nitrate is SODIUMNITRATE or saltpetre or ammonium nitrate, and described nitrite is nitrite natrium or potassium nitrite or ammonium nitrite.
5. the etching method as described in claim 3 or 4, is characterized in that the described acid corrosion time is 30 seconds to 20 minutes, and the temperature range of mixing solutions is-10 DEG C to 25 DEG C.
6. etching method as claimed in claim 1, is characterized in that described polished backside is to be undertaken by mechanical polishing or chemical rightenning or chemical mechanical polishing technique.
7. manufacture a method for solar cell, it is characterized in that silicon chip execution diffusion, etching, plated film and metallization process that the method for any one in claim 1-6 is obtained.
8. a solar cell of manufacturing by method as claimed in claim 7.
9. a solar module, is characterized in that the solar cell that comprises that multiple methods according to claim 8 are manufactured.
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| CN201410245838.7A CN104032376A (en) | 2014-06-04 | 2014-06-04 | Texturing method of solar cell silicon chip, solar cell and battery pack |
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| CN201410245838.7A CN104032376A (en) | 2014-06-04 | 2014-06-04 | Texturing method of solar cell silicon chip, solar cell and battery pack |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105271675A (en) * | 2015-11-25 | 2016-01-27 | 苏州市灵通玻璃制品有限公司 | Glass panel cutting method |
| CN109560168A (en) * | 2018-12-03 | 2019-04-02 | 山东力诺太阳能电力股份有限公司 | A method of it is activated for polysilicon solar battery slice etching solution |
| CN111303883A (en) * | 2019-10-28 | 2020-06-19 | 芯思杰技术(深圳)股份有限公司 | Corrosive liquid and preparation method of chip table board |
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| CN1614789A (en) * | 2004-09-30 | 2005-05-11 | 无锡尚德太阳能电力有限公司 | Method for preparing polycrystalline silicon suede |
| CN101853897A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing N-type crystalline silicon solar cell with aluminum-based local emitters on back side |
| CN101872806A (en) * | 2010-05-14 | 2010-10-27 | 无锡尚德太阳能电力有限公司 | Method for texture etching of solar cell silicon wafer and method for manufacturing solar cell |
| CN103178159A (en) * | 2013-03-19 | 2013-06-26 | 江苏大学 | Crystalline silicon solar cell etching method |
| CN103361738A (en) * | 2012-03-29 | 2013-10-23 | 无锡尚德太阳能电力有限公司 | Polycrystalline silicon solar battery and solar battery polycrystalline silicon slice flocking method |
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2014
- 2014-06-04 CN CN201410245838.7A patent/CN104032376A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1614789A (en) * | 2004-09-30 | 2005-05-11 | 无锡尚德太阳能电力有限公司 | Method for preparing polycrystalline silicon suede |
| CN101853897A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing N-type crystalline silicon solar cell with aluminum-based local emitters on back side |
| CN101872806A (en) * | 2010-05-14 | 2010-10-27 | 无锡尚德太阳能电力有限公司 | Method for texture etching of solar cell silicon wafer and method for manufacturing solar cell |
| CN103361738A (en) * | 2012-03-29 | 2013-10-23 | 无锡尚德太阳能电力有限公司 | Polycrystalline silicon solar battery and solar battery polycrystalline silicon slice flocking method |
| CN103178159A (en) * | 2013-03-19 | 2013-06-26 | 江苏大学 | Crystalline silicon solar cell etching method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105271675A (en) * | 2015-11-25 | 2016-01-27 | 苏州市灵通玻璃制品有限公司 | Glass panel cutting method |
| CN109560168A (en) * | 2018-12-03 | 2019-04-02 | 山东力诺太阳能电力股份有限公司 | A method of it is activated for polysilicon solar battery slice etching solution |
| CN111303883A (en) * | 2019-10-28 | 2020-06-19 | 芯思杰技术(深圳)股份有限公司 | Corrosive liquid and preparation method of chip table board |
| CN111303883B (en) * | 2019-10-28 | 2021-12-14 | 芯思杰技术(深圳)股份有限公司 | Corrosive liquid and preparation method of chip table board |
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Application publication date: 20140910 |
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