CN107331714A - A kind of IBC battery process preparation method - Google Patents
A kind of IBC battery process preparation method Download PDFInfo
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- CN107331714A CN107331714A CN201710404027.0A CN201710404027A CN107331714A CN 107331714 A CN107331714 A CN 107331714A CN 201710404027 A CN201710404027 A CN 201710404027A CN 107331714 A CN107331714 A CN 107331714A
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- reflectivity
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- matte
- wool
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000002310 reflectometry Methods 0.000 claims abstract description 16
- 238000005260 corrosion Methods 0.000 claims abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 9
- 235000008216 herbs Nutrition 0.000 claims abstract description 9
- 210000002268 wool Anatomy 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 5
- 238000002161 passivation Methods 0.000 claims abstract description 5
- 239000000654 additive Substances 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000003595 spectral effect Effects 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of IBC battery process preparation method.It comprises the following steps：A, in the former silicon chip of n-type carry out positive making herbs into wool, polished backside, front matte size is 1um 10um, matte reflectivity is 9% 13%, polished backside reflectivity is 30% 45%；B, the first doped region is overleaf formed, then carry out the selective subregion in the back side and remove removing oxide layer；C, the KOH for being 1% 3% using mass ratio, mass ratio are that 3% 5% additives, the corrosive liquid that temperature is 75 85 DEG C carry out subregion making herbs into wool corrosion, and corrosion area reflectivity is 20% 28%；D and then overleaf form the second doped region；FSF is formed in front；Tow sides deposit passivation layer；The metal electrode in last overleaf selectively formed p areas and n areas.After the above method, overleaf during operplate printing, p areas, n areas are made a distinction using matte/burnishing surface, form surface state contrast, in operplate printing, CCD camera has different spectral responses in different surfaces state, realizes quick, the accurate alignment of operplate printing.
Description
Technical field
The present invention relates to a kind of new energy photovoltaic crystal silicon battery technology, specifically a kind of IBC battery process preparation side
Method.
Background technology
Solar energy power generating has great application prospect, and current photovoltaic industry development trend drops this to put forward effect, and normal
The efficiency of structure battery is advised without larger room for promotion, efficient crystal silicon battery turns into the main flow of market research.IBC carries on the back for back contacts
Junction battery, also referred to as interdigital battery.The characteristics of battery is maximum is efficiency high, IBC batteries effect prepared by current Duo Jia R＆D institutions
Rate has reached 23%, effectively reduces the temperature coefficient of battery so that IBC batteries have more excellent compared with conventional batteries
Actual power ability more, and component facade has preferable uniformity.
The battery is that p+, n+ diffusion region are formed at the back side of the n-type silicon substrate of high life, and front prepares pyramid matte
Strengthen the absorption of light, while forming front-surface field in front（FSF）, and to positive and negative two sides deposit passivation layer, finally overleaf select
Selecting property formation p areas and the metal electrode in n areas.
But for selective subregion, the scheme of current row suitable industrialization commonly used in the trade for lbg or
Printing mask, the mode of etching slurry remove removing oxide layer, then carry out selective subregion corrosion；Overleaf operplate printing process
In, p areas, n areas are burnishing surface, and surface state is unanimously without contrast, and CCD camera can not clearly recognize registration mark, cause printing
Identification is difficult, and p areas, n areas easily misplace, and printing yield is 20%, and parallel resistance is less than 100 Ω, that is to say, that existing this side
Method can cause quick, the high accuracy alignment for being unfavorable for postorder.
The content of the invention
It can be conducive to quick, high accuracy alignment the IBC of postorder the technical problem to be solved in the present invention is to provide a kind of
Battery process preparation method.
In order to solve the above-mentioned technical problem, IBC battery process preparation methods of the invention, comprise the following steps：
A, in the former silicon chip of n-type positive making herbs into wool, polished backside are carried out, front matte size is 1um-10um, and matte reflectivity is 9%-
13%, polished backside reflectivity is 30%-45%；
B, the first doped region is overleaf formed, then carry out the selective subregion in the back side and remove removing oxide layer；
C, the KOH for being 1%-3% using mass ratio, the corrosive liquid that mass ratio is 3%-5% additives, temperature is 75-85 DEG C are divided
Area's making herbs into wool corrosion, corrosion area reflectivity is 20%-28%；
D and then overleaf form the second doped region；FSF is formed in front；Tow sides deposit passivation layer；Finally overleaf select
Selecting property formation p areas and the metal electrode in n areas.
The front matte size is 4um, and matte reflectivity is 10%, and polished backside reflectivity is 45%.
After adopting with the aforedescribed process, overleaf during operplate printing, p areas, n areas are made a distinction using matte/burnishing surface,
Surface state contrast is formed, in operplate printing, CCD camera has different spectral responses in different surfaces state, not only can be with
The quick identification registration mark of operplate printing is realized, and accurate alignment can be realized, it is to avoid dislocation and the p areas, the n areas that bring
Between fatal electric leakage risk, improve volume production yield.
Embodiment
With reference to embodiment, the IBC battery process preparation methods to the present invention are described in further detail.
The IBC battery process preparation methods of the present invention, comprise the following steps：
A, in the former silicon chip of n-type positive making herbs into wool, polished backside are carried out, front matte size is 1um-10um, and matte reflectivity is 9%-
13%, polished backside reflectivity is 30%-45%；
B, the first doped region is overleaf formed, then carry out the selective subregion in the back side and remove removing oxide layer；
C, using alkali mass ratio it is 1.5%, additive mass ratio is 2%, and temperature is rotten to carry out subregion making herbs into wool in 80 DEG C of corrosive liquid
Erosion, corrosion area reflectivity is 20%-28%；
D and then overleaf form the second doped region；FSF is formed in front；Tow sides deposit passivation layer；Finally overleaf select
Selecting property formation p areas and the metal electrode in n areas.
By the process of the present invention, selected by the way of conventional lbg or printing mask, etching slurry
Selecting property subregion, then thermokalite progress subregion making herbs into wool corrosion so that p areas, n areas surface state are inconsistent, are entered using matte, burnishing surface
Row is distinguished, and is formed in surface state contrast, operplate printing, CCD camera has different spectral responses in different surfaces state, this
Sample can not only realize the rapid alignment of operplate printing, and can realize accurate alignment, it is to avoid dislocation and bring p areas, n
Fatal electric leakage risk, improves volume production yield between area, by it was verified that its print yield be 100%, and hinder be up to
1000 more than Ω.
Claims (2)
1. a kind of IBC battery process preparation method, comprises the following steps：
A, in the former silicon chip of n-type positive making herbs into wool, polished backside are carried out, front matte size is 1um-10um, and matte reflectivity is 9%-
13%, polished backside reflectivity is 30%-45%；
B, the first doped region is overleaf formed, then carry out the selective subregion in the back side and remove removing oxide layer；
C, the KOH for being 1%-3% using mass ratio, the corrosive liquid that mass ratio is 3%-5% additives, temperature is 75-85 DEG C are divided
Area's making herbs into wool corrosion, corrosion area reflectivity ＜ 28% is 20%-28%；
D and then overleaf form the second doped region；FSF is formed in front；Tow sides deposit passivation layer；Finally overleaf select
Selecting property formation p areas and the metal electrode in n areas.
2. according to the IBC battery process preparation methods described in claim 1, it is characterised in that：The front matte size is
4um, matte reflectivity is 10%, and polished backside reflectivity is 45%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710404027.0A CN107331714A (en) | 2017-06-01 | 2017-06-01 | A kind of IBC battery process preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710404027.0A CN107331714A (en) | 2017-06-01 | 2017-06-01 | A kind of IBC battery process preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107331714A true CN107331714A (en) | 2017-11-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710404027.0A Pending CN107331714A (en) | 2017-06-01 | 2017-06-01 | A kind of IBC battery process preparation method |
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| Country | Link |
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| CN (1) | CN107331714A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112133784A (en) * | 2019-06-06 | 2020-12-25 | 国家电投集团西安太阳能电力有限公司 | Method for preparing N-type FSF structure IBC solar cell based on photoetching mask method |
| CN115117180A (en) * | 2021-03-19 | 2022-09-27 | 黄河水电西宁太阳能电力有限公司 | Manufacturing method of passivated contact IBC (ion-beam copper-carbon) battery |
Citations (6)
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|---|---|---|---|---|
| US20120090673A1 (en) * | 2010-10-19 | 2012-04-19 | Industrial Technology Research Institute | Method for forming solar cell with selective emitters |
| CN104064630A (en) * | 2014-07-15 | 2014-09-24 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing N type IBC solar battery piece |
| CN104218123A (en) * | 2014-09-05 | 2014-12-17 | 奥特斯维能源（太仓）有限公司 | N-type IBC silicon solar cell manufacturing method based on ion implantation process |
| CN105609571A (en) * | 2016-02-25 | 2016-05-25 | 上海大族新能源科技有限公司 | IBC solar cell and manufacturing method thereof |
| CN205881928U (en) * | 2016-07-11 | 2017-01-11 | 上海大族新能源科技有限公司 | Solar cell |
| CN106340568A (en) * | 2016-09-14 | 2017-01-18 | 英利能源（中国）有限公司 | IBC cell manufacturing method |
-
2017
- 2017-06-01 CN CN201710404027.0A patent/CN107331714A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120090673A1 (en) * | 2010-10-19 | 2012-04-19 | Industrial Technology Research Institute | Method for forming solar cell with selective emitters |
| CN104064630A (en) * | 2014-07-15 | 2014-09-24 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing N type IBC solar battery piece |
| CN104218123A (en) * | 2014-09-05 | 2014-12-17 | 奥特斯维能源（太仓）有限公司 | N-type IBC silicon solar cell manufacturing method based on ion implantation process |
| CN105609571A (en) * | 2016-02-25 | 2016-05-25 | 上海大族新能源科技有限公司 | IBC solar cell and manufacturing method thereof |
| CN205881928U (en) * | 2016-07-11 | 2017-01-11 | 上海大族新能源科技有限公司 | Solar cell |
| CN106340568A (en) * | 2016-09-14 | 2017-01-18 | 英利能源（中国）有限公司 | IBC cell manufacturing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112133784A (en) * | 2019-06-06 | 2020-12-25 | 国家电投集团西安太阳能电力有限公司 | Method for preparing N-type FSF structure IBC solar cell based on photoetching mask method |
| CN115117180A (en) * | 2021-03-19 | 2022-09-27 | 黄河水电西宁太阳能电力有限公司 | Manufacturing method of passivated contact IBC (ion-beam copper-carbon) battery |
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| CB02 | Change of applicant information |
Address after: 032100 economic and Technological Development Zone No. 1, Wenshui County, Lvliang, Shanxi. Applicant after: JINNENG CLEAN ENERGY TECHNOLOGY LTD. Address before: 032100 economic and Technological Development Zone No. 1, Wenshui County, Lvliang, Shanxi. Applicant before: JINENG CLEAN ENERGY TECHNOLOGY LTD. |
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Application publication date: 20171107 |
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